JPH0996807A - Formation of black matrix of liquid crystal display device - Google Patents
Formation of black matrix of liquid crystal display deviceInfo
- Publication number
- JPH0996807A JPH0996807A JP11636396A JP11636396A JPH0996807A JP H0996807 A JPH0996807 A JP H0996807A JP 11636396 A JP11636396 A JP 11636396A JP 11636396 A JP11636396 A JP 11636396A JP H0996807 A JPH0996807 A JP H0996807A
- Authority
- JP
- Japan
- Prior art keywords
- black matrix
- photoresist
- substrate
- liquid crystal
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133509—Filters, e.g. light shielding masks
- G02F1/133512—Light shielding layers, e.g. black matrix
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133509—Filters, e.g. light shielding masks
- G02F1/133514—Colour filters
- G02F1/133516—Methods for their manufacture, e.g. printing, electro-deposition or photolithography
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0005—Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
- G03F7/0007—Filters, e.g. additive colour filters; Components for display devices
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0005—Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
- G03F7/001—Phase modulating patterns, e.g. refractive index patterns
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2202/00—Materials and properties
- G02F2202/04—Materials and properties dye
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は液晶表示装置のブラ
ックマトリックス形成方法に係り、さらに詳細には液晶
表示素子のカラーフィルタに具備されるブラックマトリ
ックスを形成する方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for forming a black matrix in a liquid crystal display device, and more particularly to a method for forming a black matrix included in a color filter of a liquid crystal display device.
【０００２】[0002]
【従来の技術】一般的に、カラー液晶表示装置は薄膜ト
ランジスタの形成された下部基板と、光の３原色なる
赤、緑及び青のカラーフィルタ層の形成された上部基板
より構成される。図２はカラーフィルタの形成された上
部基板の断面図であり、上部基板の形成過程を概略的に
説明すれば次の通りである。2. Description of the Related Art Generally, a color liquid crystal display device comprises a lower substrate on which thin film transistors are formed and an upper substrate on which red, green and blue color filter layers which are the three primary colors of light are formed. FIG. 2 is a cross-sectional view of an upper substrate having a color filter formed thereon. The process of forming the upper substrate will be described below.
【０００３】まず、ガラス材料のような基板１１に遮光
用ブラックマトリックス１２を所定のパターンで形成す
る。次に、ガラス基板の全表面に赤の分光特性を有する
顔料が分散された着色アクリル感光性樹脂を塗布し、露
光、現像及びベーキング過程により赤のフィルタ層１３
を形成する。緑のフィルタ層１４と青のフィルタ層１５
も前記赤のフィルタ層１３と同一の方法で形成する。そ
の後、前記のブラックマトリックス１２とフィルタ層１
３，１４，１５を外部衝撃から保護し得るように、高い
表面硬さと良好な光透過性を有する透明樹脂で保護膜１
６を形成する。そして、液晶を駆動するＩＴＯ電極膜１
７が形成されることにより液晶表示装置のカラーフィル
タが完成される。First, a black matrix 12 for light shielding is formed in a predetermined pattern on a substrate 11 such as a glass material. Next, a colored acrylic photosensitive resin in which a pigment having a red spectral characteristic is dispersed is applied to the entire surface of the glass substrate, and the red filter layer 13 is subjected to exposure, development and baking processes.
To form Green filter layer 14 and blue filter layer 15
Is also formed by the same method as the red filter layer 13. Then, the black matrix 12 and the filter layer 1 described above are used.
The protective film 1 is made of a transparent resin having high surface hardness and good light transmittance so as to protect 3, 14, 15 from external impact.
6 is formed. Then, the ITO electrode film 1 for driving the liquid crystal
The formation of 7 completes the color filter of the liquid crystal display device.
【０００４】図３Ａ乃至図３Ｅには前記のような液晶表
示装置用カラーフィルタを形成するために、基板にブラ
ックマトリックスのパターンを形成する方法が概略的に
示されている。3A to 3E schematically show a method of forming a black matrix pattern on a substrate to form a color filter for a liquid crystal display device as described above.
【０００５】図３Ａはブラックマトリックスの材料とし
て主に用いられるクロム金属や酸化クロムなどの膜２２
を基板２１に形成したものを示す。クロム膜の形成はス
パッタリング法でなることが一般的である。次に、図３
Ｂに示されたようにクロム膜２２の全面にフォトレジス
ト層２３を塗布する。フォトレジスト層２３は露光及び
現像過程を通じて図３Ｃに示されたようなパターン２３
´を形成し、エッチングでフォトレジストが取り除かれ
た部分のクロム膜を腐食させることにより図３Ｄのよう
な状態となる。その後、ストリッピング過程を通じてフ
ォトレジスト２３´を取り除けば図３Ｅに示されたよう
な所定パターンのブラックマトリックス２２´が得られ
る。FIG. 3A shows a film 22 made of chromium metal or chromium oxide which is mainly used as a material for the black matrix.
1 is formed on the substrate 21. The chromium film is generally formed by a sputtering method. Next, FIG.
As shown in B, a photoresist layer 23 is applied on the entire surface of the chromium film 22. The photoresist layer 23 is exposed to the pattern 23 as shown in FIG. 3C through the exposing and developing processes.
3'is formed, and the chromium film in the portion where the photoresist is removed by etching is corroded, resulting in the state shown in FIG. 3D. Then, the photoresist 23 'is removed through a stripping process to obtain a black matrix 22' having a predetermined pattern as shown in FIG. 3E.
【０００６】ところで、前記のような金属を用いたブラ
ックマトリックスにおいて問題となるのは、クロムが重
金属であるという点である。即ち、重金属を用いる液晶
表示装置は製作から使用及び廃棄に至るまで予測し難い
環境汚染を招く。このような環境汚染を防止し得るブラ
ックマトリツクスの材料は、高分子樹脂に黒い顔料の分
散されたカラーフォトレジスト型樹脂である。しかしな
がら、前記の材料を用いる場合は光学的な条件を満足さ
せるために最少１．０〜１．５μｍ程度の厚さにしなけ
ればならないが、これは金属を用いる場合より厚くなっ
ており、後続工程で赤、青及び緑のフィルタを形成する
時、平滑性が低下されるという問題がある。By the way, a problem with the black matrix using a metal as described above is that chromium is a heavy metal. That is, a liquid crystal display device using a heavy metal causes unpredictable environmental pollution from manufacture to use and disposal. A black matrix material capable of preventing such environmental pollution is a color photoresist type resin in which a black pigment is dispersed in a polymer resin. However, when using the above materials, the thickness must be at least 1.0 to 1.5 μm in order to satisfy the optical conditions, but this is thicker than when using a metal, When forming red, blue and green filters, there is a problem that smoothness is degraded.
【０００７】[0007]
【発明が解決しようとする課題】本発明は前記のような
従来の問題点を解決するためになされたものであり、本
発明の目的は、重金属汚染を招かず、かつ後のフィルタ
形成工程で平滑性を低下させない液晶表示装置のブラッ
クマトリックス形成方法を提供することにある。SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned conventional problems, and an object of the present invention is to prevent heavy metal contamination and to perform a subsequent filter forming step. It is an object of the present invention to provide a method for forming a black matrix of a liquid crystal display device which does not reduce smoothness.
【０００８】[0008]
【課題を解決するための手段】前記の目的を達成するた
めに、本発明は、基板の全面にフォトレジストを塗布す
る段階と、露光及び現像過程を通じて前記基板がフォト
レジストで積層された部分と露出された部分とに区分形
成するフォトレジストのパターン形成段階と、前記所定
パターンのフォトレジストの形成された基板の全面にブ
ラックマトリックス材料を塗布する段階と、前記フォト
レジストのパターン形成段階で前記基板の露出された部
分に積層されたブラックマトリックス材料のみ前記基板
上に残るように、前記所定パターンのフォトレジストと
その上部に積層されたブラックマトリックス材料とをス
トリッピングする段階とを具備することを特徴とする。In order to achieve the above object, the present invention provides a step of applying a photoresist on the entire surface of a substrate, and a portion where the substrate is laminated with the photoresist through an exposing and developing process. The step of forming a photoresist pattern to be separately formed on the exposed portion, the step of applying a black matrix material to the entire surface of the substrate on which the photoresist of the predetermined pattern is formed, and the step of forming the photoresist pattern Stripping the photoresist having the predetermined pattern and the black matrix material laminated on the photoresist so that only the black matrix material laminated on the exposed portion of the photoresist remains on the substrate. And
【０００９】本発明の他の特徴によれば、前記ストリッ
ピング段階はフォトレジストとブラックマトリックス材
料とが塗布された基板を約０．５〜３％の水酸化ナトリ
ウム（ＮａＯＨ）溶液に浸した後に高圧で水を噴射して
なされる。According to another feature of the invention, the stripping step comprises immersing the substrate coated with photoresist and black matrix material in a solution of about 0.5-3% sodium hydroxide (NaOH). It is made by jetting water at high pressure.
【００１０】本発明の他の特徴によれば、前記フォトレ
ジストの塗布段階は基板上にフォトレジストを約０．３
〜１．０μｍの厚さに塗布する。According to another feature of the invention, the step of applying the photoresist comprises depositing about 0.3 photoresist on the substrate.
Apply to a thickness of ˜1.0 μm.
【００１１】本発明の他の特徴によれば、前記ブラック
マトリックスの塗布段階はブラックマトリックス材料を
約０．３〜０．７μｍの厚さに塗布する。According to another feature of the invention, the step of applying the black matrix comprises applying the black matrix material to a thickness of about 0.3-0.7 μm.
【００１２】本発明の他の特徴によれば、前記ブラック
マトリックス材料は１μｍ以下の黒鉛粒子を溶媒に分散
させたものである。According to another feature of the present invention, the black matrix material is graphite particles of 1 μm or less dispersed in a solvent.
【００１３】本発明の他の特徴によれば、前記ブラック
マトリックス材料はアクリル、エポキシ、ポリアミド又
はポリビニールアルコールのような高分子樹脂、分散
剤、カーボンブラック顔料又は赤、緑、青顔料の混合物
のような顔料を有機溶媒に分散させたものである。According to another feature of the invention, the black matrix material is a polymeric resin such as acrylic, epoxy, polyamide or polyvinyl alcohol, a dispersant, a carbon black pigment or a mixture of red, green and blue pigments. Such a pigment is dispersed in an organic solvent.
【００１４】[0014]
【発明の実施の形態】以下、添付した図面に基づき本発
明を詳細に説明する。BEST MODE FOR CARRYING OUT THE INVENTION The present invention will be described in detail below with reference to the accompanying drawings.
【００１５】本発明のブラックマトリックス材料として
は黒鉛が用いられる。黒鉛を粉砕した後に１μｍ以下の
粒子のみを濾過させて、これを水や他の溶媒に分散させ
て用いる。Graphite is used as the black matrix material of the present invention. After crushing the graphite, only particles having a size of 1 μm or less are filtered, and the particles are dispersed in water or another solvent for use.
【００１６】選択的に高分子樹脂であるアクリル、エポ
キシ、ポリアミド又はポリビニールアルコール、分散剤
及び黒色類の顔料を有機溶媒に分散させて用いる。顔料
としてはカーボンブラック顔料又は赤、緑及び青顔料の
混合物が用いる。Selectively, a polymer resin such as acrylic, epoxy, polyamide or polyvinyl alcohol, a dispersant and a black pigment are dispersed in an organic solvent for use. As the pigment, a carbon black pigment or a mixture of red, green and blue pigments is used.
【００１７】前記のような材料を用いてブラックマトリ
ックスを形成する方法は図１Ａ及び図１Ｅに示してあ
る。図１Ａはブラックマトリックスの形成される基板３
１であり、基板３１上には図１Ｂのようにフォトレジス
ト層３２を塗布する。フォトレジスト層３２はスピン塗
布方法で形成されることが好ましく、約０．３〜１．０
μｍの厚さに塗布することが好ましい。A method of forming a black matrix using the above materials is shown in FIGS. 1A and 1E. FIG. 1A shows a substrate 3 on which a black matrix is formed.
1 and the photoresist layer 32 is applied on the substrate 31 as shown in FIG. 1B. The photoresist layer 32 is preferably formed by a spin coating method, and has a thickness of about 0.3 to 1.0.
It is preferably applied to a thickness of μm.
【００１８】図１Ｃはフォトレジスト層３２を露光及び
現像することにより形成されたフォトレジスト３２′の
所定パターンを示した図面である。前記露光及び現像は
一般的な方法により行われる。現像後、図１Ｃに示され
たようにフォトレジスト層３２が部分的に取り除かれ
て、基板３１上に露出された部分とフォトレジスト３
２′で覆われている部分とが形成される。FIG. 1C is a view showing a predetermined pattern of the photoresist 32 'formed by exposing and developing the photoresist layer 32. As shown in FIG. The exposure and development are performed by a general method. After development, as shown in FIG. 1C, the photoresist layer 32 is partially removed, and the exposed portion of the photoresist on the substrate 31 and the photoresist 3 are removed.
The part covered with 2'is formed.
【００１９】その後、ブラックマトリックス材料を前記
所定パターンのフォトレジスト３２′上にスピン塗布す
ることにより図１Ｄのような断面を形成する。ブラック
マトリックス材料は前記したように黒鉛又は高分子樹脂
に基づいた材料である。ブラックマトリックス３３の厚
さは約０．３〜０．７μｍであることが好ましい。ブラ
ックマトリックス材料が塗布された後、約８０〜１１０
℃程度で加熱して溶媒を蒸発させる仮硬化作業を行う。Then, a black matrix material is spin-coated on the photoresist 32 'having the predetermined pattern to form a cross section as shown in FIG. 1D. The black matrix material is a material based on graphite or polymer resin as described above. The thickness of the black matrix 33 is preferably about 0.3 to 0.7 μm. About 80 ~ 110 after black matrix material is applied
A temporary curing operation is performed by heating at about ℃ to evaporate the solvent.
【００２０】次に、フォトレジスト３２′が基板３１か
ら完全に取り除かれるようにストリッピング作業を行
う。ストリッピングは先ずフォトレジスト３２′とブラ
ックマトリックス３３とが塗布されている基板３１を約
０．５〜３％のＮａＯＨ溶液に浸した後、高圧で水を噴
射させることによってなされる。フォトレジストはＮａ
ＯＨ溶液に対して高い溶解性を有し、ブラックマトリッ
クスは基板に対して高い密着性を有するので所定パター
ンのフォトレジスト３２′及び該フォトレジスト３２′
を覆っているブラックマトリックス３３はストリッピン
グ作業を通じて容易に取り除かれる。完成されたブラッ
クマトリックス３３′の形態は図１Ｅに示されており、
ブラックマトリックス３３′は厚さが０．３〜０．７μ
ｍ、幅が約１０〜３０μｍであった。Next, a stripping operation is performed so that the photoresist 32 'is completely removed from the substrate 31. The stripping is performed by first immersing the substrate 31 coated with the photoresist 32 'and the black matrix 33 in a NaOH solution of about 0.5 to 3%, and then spraying water at a high pressure. The photoresist is Na
Since the black matrix has a high solubility in an OH solution and the black matrix has a high adhesion to a substrate, the photoresist 32 'having a predetermined pattern and the photoresist 32'.
The black matrix 33, which covers the, is easily removed through a stripping operation. The morphology of the completed black matrix 33 'is shown in FIG. 1E,
Black matrix 33 'has a thickness of 0.3-0.7μ
m, and the width was about 10 to 30 μm.
【００２１】[0021]
【発明の効果】本発明により黒鉛又は高分子樹脂に基づ
いて形成されたブラックマトリックスと従来技術のクロ
ムに基づいて形成されたブラックマトリックスとを比較
すると、同一厚さの０．３〜０．７μｍで光学濃度がほ
ぼ同一であった。さらに、反射率については、従来のブ
ラックマトリックスは高反射率を示した反面、本発明の
ブラックマトリックスは低反射率の光学的特性を示し
た。従って、本発明によるブラックマトリックスは環境
汚染の防止に非常に効果的である。The black matrix formed of graphite or polymer resin according to the present invention and the conventional black matrix formed of chromium are compared with each other and have the same thickness of 0.3 to 0.7 μm. The optical densities were almost the same. Regarding the reflectance, the conventional black matrix showed high reflectance, while the black matrix of the present invention showed low reflectance optical characteristics. Therefore, the black matrix according to the present invention is very effective in preventing environmental pollution.
【図１】（Ａ）乃至（Ｅ）は本発明による液晶表示装置
のブラックマトリックスの形成方法を示した断面図であ
る。1A to 1E are cross-sectional views showing a method of forming a black matrix of a liquid crystal display device according to the present invention.
【図２】液晶表示装置を構成するカラーフィルタの概略
的な断面図である。FIG. 2 is a schematic cross-sectional view of a color filter forming a liquid crystal display device.
【図３】（Ａ）乃至（Ｅ）は従来の技術による液晶表示
装置のブラックマトリックスの形成方法を示した断面図
である。3A to 3E are cross-sectional views showing a method of forming a black matrix of a liquid crystal display device according to a conventional technique.
１１ 基板 １２ 遮光用ブラックマトリックス １３ 赤のフィルタ層１３ １４ 緑のフィルタ層 １５ 青のフィルタ層 １６ 保護膜 １７ ＩＴＯ電極膜 ３１ 基板３１ ３２ フォトレジスト層 ３２′ フォトレジスト ３３，３３′ ブラックマトリックス 11 substrate 12 light-shielding black matrix 13 red filter layer 13 14 green filter layer 15 blue filter layer 16 protective film 17 ITO electrode film 31 substrate 31 32 photoresist layer 32 'photoresist 33, 33' black matrix
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.6 識別記号 庁内整理番号 ＦＩ 技術表示箇所 Ｇ０３Ｆ 7/16 Ｇ０３Ｆ 7/16 ─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. 6 Identification code Internal reference number FI Technical display location G03F 7/16 G03F 7/16
Claims (6)
段階と、 露光及び現像過程を通じて前記基板をフォトレジストで
積層された部分と露出された部分とに分けて形成するフ
ォトレジストのパターン形成段階と、 前記所定パターンのフォトレジストの形成された基板の
全面にブラックマトリックス材料を塗布する段階と、 前記フォトレジストのパターン形成段階で前記基板の露
出された部分に積層されたブラックマトリックス材料の
み前記基板上に残るように、前記所定パターンのフォト
レジストとその上部に積層されたブラックマトリックス
材料をストリッピングする段階と、 を具備することを特徴とする液晶表示装置のブラックマ
トリックス形成方法。1. A step of applying a photoresist on the entire surface of a substrate, and a step of forming a photoresist pattern for separately forming a portion of the substrate laminated with the photoresist and an exposed portion through an exposure and development process. A step of applying a black matrix material to the entire surface of the substrate on which the photoresist having the predetermined pattern is formed, and a black matrix material only on the exposed portion of the substrate at the step of forming the photoresist pattern on the substrate And a step of stripping the photoresist having the predetermined pattern and a black matrix material laminated on the photoresist so as to remain in the method of forming a black matrix of a liquid crystal display device.
トとブラックマトリックス材料とが塗布された基板を約
０．５乃至３％の水酸化ナトリウム（ＮａＯＨ）溶液に
浸した後に高圧で水を噴射してなることを特徴とする請
求項１に記載の液晶表示装置のブラックマトリックス形
成方法。2. The stripping step comprises immersing a substrate coated with a photoresist and a black matrix material in a sodium hydroxide (NaOH) solution of about 0.5 to 3% and then spraying water at a high pressure. The method for forming a black matrix of a liquid crystal display device according to claim 1, wherein.
板上にフォトレジストを約０．３〜１．０μｍの厚さに
塗布することを特徴とする請求項１に記載の液晶表示装
置のブラックマトリックス形成方法。3. The black matrix of a liquid crystal display device according to claim 1, wherein in the step of applying the photoresist, the photoresist is applied to the substrate to a thickness of about 0.3 to 1.0 μm. Forming method.
ブラックマトリックス材料を約０．３〜０．７μｍの厚
さに塗布することを特徴とする請求項１に記載の液晶表
示装置のブラックマトリックス形成方法。4. The method of claim 1, wherein the applying of the black matrix comprises applying the black matrix material to a thickness of about 0.3 to 0.7 μm.
以下の黒鉛粒子を溶媒に分散させたことを特徴とする請
求項１乃至４のいずれか一項に記載の液晶表示装置のブ
ラックマトリックス形成方法。5. The black matrix material is 1 μm
The black matrix forming method for a liquid crystal display device according to claim 1, wherein the following graphite particles are dispersed in a solvent.
ル、エポキシ、ポリアミド又はポリビニールアルコール
のような高分子樹脂、分散剤、カーボンブラック顔料又
は赤、緑、青顔料の混合物のような顔料を有機溶媒に分
散させたことを特徴とする請求項１乃至４のいずれか一
項に記載の液晶表示装置のブラックマトリックス形成方
法。6. The black matrix material comprises a polymer resin such as acrylic, epoxy, polyamide or polyvinyl alcohol, a dispersant, a carbon black pigment or a pigment such as a mixture of red, green and blue pigments dispersed in an organic solvent. 5. The method for forming a black matrix of a liquid crystal display device according to claim 1, wherein the black matrix is formed.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1995-33988 | 1995-09-30 | ||
| KR1019950033988A KR970016690A (en) | 1995-09-30 | 1995-09-30 | Method of forming black matrix of liquid crystal display |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0996807A true JPH0996807A (en) | 1997-04-08 |
Family
ID=19429255
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11636396A Withdrawn JPH0996807A (en) | 1995-09-30 | 1996-05-10 | Formation of black matrix of liquid crystal display device |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPH0996807A (en) |
| KR (1) | KR970016690A (en) |
| DE (1) | DE19612956A1 (en) |
| GB (1) | GB2305765A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007273961A (en) * | 2006-03-10 | 2007-10-18 | Semiconductor Energy Lab Co Ltd | Semiconductor device |
| JP2012216872A (en) * | 2006-03-10 | 2012-11-08 | Semiconductor Energy Lab Co Ltd | Semiconductor device |
| KR101291893B1 (en) * | 2006-11-24 | 2013-07-31 | 엘지디스플레이 주식회사 | Liquid Crystal Display Panel and Method For Fabricating Thereof |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5885669A (en) * | 1997-08-08 | 1999-03-23 | Acheson Industries, Inc. | Liquid crystal device and method |
| KR100866202B1 (en) * | 2002-06-18 | 2008-10-30 | 오리온오엘이디 주식회사 | Organic Electroluminescence Device Using Diamond Like Carbon and Manufacturing Method thereof |
| US8669026B2 (en) | 2009-01-19 | 2014-03-11 | Basf Se | Black matrix for colour filters |
| EP2855598B1 (en) | 2012-06-01 | 2017-01-11 | Basf Se | Black colorant mixture |
| CN113436548B (en) * | 2021-06-23 | 2024-01-30 | 南方科技大学 | Preparation method of black matrix |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63144305A (en) * | 1986-12-08 | 1988-06-16 | Seiko Instr & Electronics Ltd | Manufacture of multicolor display device |
| DE3940640A1 (en) * | 1989-12-08 | 1991-06-20 | Nokia Unterhaltungselektronik | METHOD FOR PRODUCING A SUBSTRATE PLATE FOR A LIQUID CRYSTAL CELL WITH BLACK MATRIX AREAS |
| JPH0743522A (en) * | 1993-05-28 | 1995-02-14 | Nippon Oil Co Ltd | Method for forming, substrate having light-shading layer, substrate having light-shading layer, counter electrode substrate for black-and-white display thin film transistor(tft) array substrate, and black-and-white liquid crystal display device |
-
1995
- 1995-09-30 KR KR1019950033988A patent/KR970016690A/en not_active Application Discontinuation
-
1996
- 1996-03-29 GB GB9606607A patent/GB2305765A/en not_active Withdrawn
- 1996-04-01 DE DE19612956A patent/DE19612956A1/en not_active Withdrawn
- 1996-05-10 JP JP11636396A patent/JPH0996807A/en not_active Withdrawn
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007273961A (en) * | 2006-03-10 | 2007-10-18 | Semiconductor Energy Lab Co Ltd | Semiconductor device |
| JP2012216872A (en) * | 2006-03-10 | 2012-11-08 | Semiconductor Energy Lab Co Ltd | Semiconductor device |
| US8415664B2 (en) | 2006-03-10 | 2013-04-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| KR101291893B1 (en) * | 2006-11-24 | 2013-07-31 | 엘지디스플레이 주식회사 | Liquid Crystal Display Panel and Method For Fabricating Thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| GB2305765A (en) | 1997-04-16 |
| GB9606607D0 (en) | 1996-06-05 |
| KR970016690A (en) | 1997-04-28 |
| DE19612956A1 (en) | 1997-04-03 |
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