JPH0983144A - Thick film/thin film hybrid substrate and its processing method - Google Patents
Thick film/thin film hybrid substrate and its processing methodInfo
- Publication number
- JPH0983144A JPH0983144A JP25579695A JP25579695A JPH0983144A JP H0983144 A JPH0983144 A JP H0983144A JP 25579695 A JP25579695 A JP 25579695A JP 25579695 A JP25579695 A JP 25579695A JP H0983144 A JPH0983144 A JP H0983144A
- Authority
- JP
- Japan
- Prior art keywords
- thick film
- wiring
- substrate
- film
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Production Of Multi-Layered Print Wiring Board (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、厚膜／薄膜混成基板の
表面の構造及びその加工法に係り、特に、大形計算機に
使用される厚膜／薄膜混成基板を製造する際に、セラミ
ック材と金属配線から構成される厚膜多層配線基板の表
面を磨くための研磨加工方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a structure of a surface of a thick film / thin film hybrid substrate and a processing method thereof, and more particularly, to a ceramic for manufacturing a thick film / thin film hybrid substrate used in a large-sized computer. The present invention relates to a polishing method for polishing the surface of a thick film multilayer wiring board composed of a material and metal wiring.
【０００２】[0002]
【従来の技術】近年、大形計算機の演算処理の高速化は
目覚ましく、これともないＬＳＩを載せる配線基板とし
て、日経エレクトロニクス Ｎｏ．５１５ １９９０．
１２．１０ 第２２６頁〜第２４１頁に記載されている
ように、セラミックスの厚膜多層配線基板が用いられる
ようになった。そして、さらに演算処理を高速化するた
めには、厚膜多層配線基板の上に薄膜金属配線と樹脂系
絶縁膜から成る薄膜を乗せた厚膜／薄膜混成基板（以
下、単に混成基板と呼ぶ）を用いることが提案されてい
る。2. Description of the Related Art In recent years, the speed of arithmetic processing of large-scale computers has been remarkably high, and as a wiring board on which an LSI is mounted, Nikkei Electronics No. 515 1990.
12.10 As described on pages 226 to 241, thick ceramic multilayer wiring boards have come to be used. In order to further speed up the arithmetic processing, a thick film / thin film hybrid substrate (hereinafter simply referred to as a hybrid substrate) in which a thin film composed of thin film metal wiring and a resin-based insulating film is placed on a thick film multilayer wiring substrate Is proposed to be used.
【０００３】従来の厚膜多層配線基板では、表面に薄膜
配線を形成しないため、焼結時の表面状態のままで用い
られていた。これに対し、混成基板では、厚膜多層配線
基板の表面に薄膜金属配線と樹脂系絶縁膜から成る薄膜
配線層を形成する構造をとっている。そして、従来の混
成基板の構造としては、厚膜多層配線基板の厚膜配線回
路と薄膜配線回路を結線するための配線パターン（整合
パターン）をスパッタリング・マスク形成・露光・エッ
チング等に代表される薄膜工程により、厚膜多層配線基
板の表面に直接形成する構造を取っている。そして、こ
の薄膜工程により整合パターンを厚膜多層配線基板の表
面に直接形成するためには、露光機の焦点深度等の問題
から、厚膜多層配線基板の表面を平坦化及び平滑化する
ことが必要である。このために、公知例(特開昭６０−
５５６９７号公報，特開平３−２６８４８２号公報)に
あるように、研削加工及びラッピング加工等により厚膜
多層配線基板の表面を削り、基板の表面を平坦化すると
ともに、平面度，表面粗さを改善する工程が必要であっ
た。In the conventional thick film multilayer wiring board, since thin film wiring is not formed on the surface, it has been used as it is in the surface state at the time of sintering. On the other hand, the hybrid substrate has a structure in which a thin film wiring layer including a thin film metal wiring and a resin-based insulating film is formed on the surface of a thick film multilayer wiring board. As a structure of a conventional hybrid substrate, a wiring pattern (matching pattern) for connecting a thick film wiring circuit and a thin film wiring circuit of a thick film multilayer wiring board is represented by sputtering, mask formation, exposure, etching, etc. The structure is directly formed on the surface of the thick film multilayer wiring board by the thin film process. In order to directly form the matching pattern on the surface of the thick film multilayer wiring board by this thin film process, it is necessary to flatten and smooth the surface of the thick film multilayer wiring board due to problems such as the depth of focus of the exposure device. is necessary. For this reason, a known example (JP-A-60-
55697, JP-A-3-268482), the surface of the thick film multilayer wiring board is ground by grinding and lapping to flatten the surface of the board, and the flatness and surface roughness are improved. A process to improve was needed.
【０００４】[0004]
【発明が解決しようとする課題】ここで、従来の厚膜／
薄膜混成基板の表面の構造について説明する。図２は、
従来の厚膜／薄膜混成基板表面の拡大断面図である。従
来の混成基板の構造としては、薄膜整合パターン８を、
スパッタリング・マスク形成・露光・エッチング等に代
表される薄膜工程により、厚膜多層配線基板１の表面に
直接形成する構造にしている。そして、従来の混成基板
では、薄膜整合パターン８を厚膜多層配線基板１の内部
配線４（スルーホールと呼ぶ）上に形成し、薄膜整合パ
ターン８上に薄膜金属配線６を形成することで、基板材
３と内部配線４により構成される厚膜多層配線基板１の
厚膜配線回路と薄膜金属配線６と絶縁膜５により構成さ
れる薄膜配線回路を結線し、１つの回路を形成してい
る。Here, the conventional thick film /
The structure of the surface of the thin film hybrid substrate will be described. FIG.
It is an expanded sectional view of the conventional thick film / thin film mixed substrate surface. As the structure of the conventional hybrid substrate, the thin film matching pattern 8 is
The structure is such that it is directly formed on the surface of the thick film multilayer wiring substrate 1 by a thin film process represented by sputtering, mask formation, exposure, etching and the like. Then, in the conventional hybrid substrate, the thin film matching pattern 8 is formed on the internal wiring 4 (referred to as a through hole) of the thick film multilayer wiring substrate 1, and the thin film metal wiring 6 is formed on the thin film matching pattern 8. The thick film wiring circuit of the thick film multilayer wiring board 1 formed of the substrate material 3 and the internal wiring 4 and the thin film wiring circuit formed of the thin film metal wiring 6 and the insulating film 5 are connected to form one circuit. .
【０００５】上記したように、従来の混成基板では、薄
膜工程により形成する薄膜整合パターン８を厚膜多層配
線基板１の表面に直接形成するため、薄膜工程の露光機
の焦点深度等の問題から、厚膜多層配線基板１の表面を
平坦化及び平滑化することが必要である。そして、この
ために厚膜多層配線基板１の表面に対し、研削加工及び
ラッピング加工に代表される平坦化加工を施すことで、
厚膜多層配線基板１の表面を数十から数百マイクロメー
トル削り落し、基板の表面を平坦化および平滑化してい
る。しかし、このような研削加工もしくはラッピング加
工に代表される平坦化加工を厚膜多層配線基板１の表面
に施す場合、以下の問題点が生じる。As described above, in the conventional hybrid substrate, since the thin film matching pattern 8 formed by the thin film process is directly formed on the surface of the thick film multilayer wiring substrate 1, there is a problem such as the depth of focus of the exposure machine in the thin film process. It is necessary to flatten and smooth the surface of the thick film multilayer wiring board 1. For this purpose, the surface of the thick film multilayer wiring substrate 1 is subjected to flattening processing represented by grinding and lapping,
The surface of the thick-film multilayer wiring substrate 1 is scraped off from several tens to several hundreds of micrometers to flatten and smooth the surface of the substrate. However, when the flattening process represented by such grinding process or lapping process is applied to the surface of the thick film multilayer wiring substrate 1, the following problems occur.
【０００６】１．厚膜多層配線基板１は、ペースト状の
金属配線を形成したセラミックスのシートを積層し、こ
れを高温の炉で焼結するため、セラミックスや金属配線
材の内部に大小のボイドが存在する。また、金属の配線
材とセラミックスである基板材の熱膨張係数の違いか
ら、配線材と基板材の間に隙間が生じやすい。このボイ
ドと隙間は、基板の表面を削ったときに、基板の表面に
露出する。そして、薄膜形成時にこれらの欠陥の上に薄
膜整合パターンが形成されると、その欠陥の位置や大き
さにより薄膜配線の断線不良が生じ、問題となる。この
基板表面のボイドと材料間隙間に起因した断線不良を防
止するための方法として、無機材料や有機材料による穴
埋め処理があるが、多くの工程を要するため、非常にコ
ストが高くなる。1. Since the thick film multilayer wiring board 1 is formed by laminating ceramic sheets on which paste-like metal wiring is formed and sintering this in a high temperature furnace, large and small voids exist inside the ceramics and the metal wiring material. Further, due to the difference in thermal expansion coefficient between the metal wiring material and the ceramic substrate material, a gap is likely to be formed between the wiring material and the substrate material. The void and the gap are exposed on the surface of the substrate when the surface of the substrate is shaved. If a thin film matching pattern is formed on these defects during thin film formation, disconnection failure of the thin film wiring may occur depending on the position and size of the defect, which becomes a problem. As a method for preventing the disconnection failure caused by the voids on the substrate surface and the material gap, there is a hole filling process using an inorganic material or an organic material, but since many steps are required, the cost becomes very high.
【０００７】２．上記したように、厚膜多層配線基板は
金属の配線材とセラミックスである基板材からなる複合
材である。そして複合材である基板を高温の炉で焼結
し、常温まで冷却すると、熱膨張係数の違いから基板内
部に応力を生じる。しかし、焼結後に手を加えない状態
では、内部応力は存在するが、バランスを保っており、
特に問題にはならない。これに対し、焼結後の厚膜多層
配線基板の片面もしくは両面を対象に、研削加工または
ラッピング加工に代表される平坦化加工を施し、表面を
数十から数百マイクロメートル削り落す場合、焼結工程
において生じた基板の内部応力のバランスが崩れる。そ
して、この状態で基板を薄膜工程におけるベーク，乾燥
等の加熱工程に通すと、加熱による応力により基板の表
面にクラックが生じることがあり問題となる。[0007] 2. As described above, the thick-film multilayer wiring board is a composite material composed of a metal wiring material and a ceramic substrate material. When the substrate, which is a composite material, is sintered in a high temperature furnace and cooled to room temperature, stress is generated inside the substrate due to the difference in thermal expansion coefficient. However, in the state where no modification is made after sintering, internal stress exists, but balance is maintained,
There is no particular problem. On the other hand, if one or both sides of the thick film multilayer wiring board after sintering is subjected to flattening processing typified by grinding or lapping, and the surface is scraped off by several tens to several hundreds of micrometers, it is burned. The balance of internal stress of the substrate generated in the binding step is lost. Then, if the substrate is passed through a heating process such as baking and drying in the thin film process in this state, cracks may occur on the surface of the substrate due to stress due to heating, which becomes a problem.
【０００８】上記説明したように、従来の混成基板で
は、薄膜整合パターン８を厚膜多層配線基板１の表面に
直接形成する構造であるため、厚膜多層配線基板１の表
面を研削加工及びラッピング加工等により削り落し、平
坦化・平滑化することが必要である。そして、この加工
により、基板の表面にボイドと材料間隙間の欠陥が露出
するとともに、基板の応力バランスが崩れることで、薄
膜配線の断線不良やクラックの発生等の問題が生じた。As described above, since the conventional hybrid substrate has a structure in which the thin film matching pattern 8 is directly formed on the surface of the thick film multilayer wiring board 1, the surface of the thick film multilayer wiring board 1 is ground and lapped. It is necessary to scrape off by processing, etc. to make it flat and smooth. Then, by this processing, defects between voids and material gaps are exposed on the surface of the substrate, and the stress balance of the substrate is disturbed, which causes problems such as disconnection failure of thin film wiring and generation of cracks.
【０００９】本発明では、以上２つの課題を解決するた
めの厚膜多層配線基板の表面構造とその加工及び製造方
法の提供を目的としている。An object of the present invention is to provide a surface structure of a thick film multilayer wiring board and a method of processing and manufacturing the same for solving the above two problems.
【００１０】[0010]
【課題を解決するための手段】上記目的は、以下のよう
な厚膜多層配線基板の構造と製造プロセスを取ることで
達成される。The above object can be achieved by taking the following structure and manufacturing process of a thick film multilayer wiring board.
【００１１】（１）厚膜多層配線基板の表面において、
基板の表面に露出する位置に厚膜配線パターン（厚膜整
合パターン）を焼結工程以前にあらかじめ形成する。そ
して、焼結後に厚膜多層配線基板の表面に薄膜配線層形
成するときに、上記厚膜配線パターンと薄膜金属配線を
結線し、厚膜配線回路と薄膜配線回路を結合することで
製造コストの低い厚膜／薄膜混成基板を得ることができ
る。(1) On the surface of the thick film multilayer wiring board,
A thick film wiring pattern (thick film matching pattern) is formed in advance at a position exposed on the surface of the substrate before the sintering process. When the thin film wiring layer is formed on the surface of the thick film multilayer wiring board after sintering, the thick film wiring pattern and the thin film metal wiring are connected to each other, and the thick film wiring circuit and the thin film wiring circuit are combined to reduce the manufacturing cost. Low thick film / thin film hybrid substrates can be obtained.
【００１２】（２）焼結後の厚膜多層配線基板の表面に
対し、研削加工，ラッピング加工に代表される平坦化加
工を施さない。したがって、厚膜多層配線基板の表面を
削ることによって基板表面に露出するボイドと材料間隙
間に起因した断線不良および基板を削ることによって生
じるの応力バランスの崩れに起因する基板のクラックを
防止することができる。(2) The flattening process typified by grinding and lapping is not applied to the surface of the thick film multilayer wiring substrate after sintering. Therefore, it is possible to prevent the disconnection failure caused by the voids exposed on the substrate surface and the material gap when the surface of the thick film multilayer wiring board is shaved, and the crack of the substrate caused by the unbalance of the stress caused by the shaved board. You can
【００１３】また、上記目的は、厚膜多層配線基板の表
面に形成された厚膜配線パターンを対象に、研磨布と遊
離砥粒を工具として用いた研磨加工を施し、厚膜配線パ
ターンの表面を鏡面に磨くことで達成される。Further, the above object is to perform a polishing process using a polishing cloth and loose abrasive grains as a tool on a thick film wiring pattern formed on the surface of a thick film multilayer wiring board to obtain a surface of the thick film wiring pattern. It is achieved by polishing to a mirror surface.
【００１４】さらに上記目的は、厚膜多層配線基板の表
面に形成された厚膜配線パターンを対象に、押し込み圧
力を加えたときの研磨布表面の変形量が８μｍ／ｋｐａ
以上の研磨布と遊離砥粒を工具として用いた研磨加工を
施し、厚膜配線パターンの表面を全面にわたって鏡面に
磨くことで達成される。Further, for the above-mentioned object, the deformation amount of the polishing cloth surface when a pressing pressure is applied to the thick film wiring pattern formed on the surface of the thick film multilayer wiring substrate is 8 μm / kpa.
This can be achieved by performing polishing using the above polishing cloth and loose abrasive grains as a tool and polishing the entire surface of the thick film wiring pattern to a mirror surface.
【００１５】[0015]
【作用】本発明では、厚膜多層配線基板の表面露出する
位置に厚膜配線パターン（厚膜整合パターン）を焼結工
程以前にあらかじめ形成し、厚膜整合パターンと薄膜金
属配線を結線し、厚膜配線回路と薄膜配線回路を結合す
る基板構造にすることで、従来の厚膜／薄膜混成基板の
製造工程において問題となる厚膜基板表面の欠陥に起因
する薄膜配線の断線不良および基板内部応力のバランス
の崩れに起因するクラック等の問題を回避することがで
きる。また、この本発明の基板構造では、整合パターン
を厚膜多層配線基板の製造工程において形成するため、
従来の基板構造において必要となる薄膜整合パターンの
形成工程を除くことができる。このため、薄膜工程の工
程数が少なくなり、製造コストを低く抑えることができ
る。In the present invention, the thick film wiring pattern (thick film matching pattern) is formed in advance at the position where the surface of the thick film multilayer wiring board is exposed before the sintering process, and the thick film matching pattern and the thin film metal wiring are connected. By using a substrate structure in which the thick film wiring circuit and the thin film wiring circuit are combined, the disconnection defect of the thin film wiring due to the defect on the surface of the thick film substrate which is a problem in the manufacturing process of the conventional thick film / thin film hybrid substrate It is possible to avoid problems such as cracks due to the unbalance of stress. Further, in the substrate structure of the present invention, since the matching pattern is formed in the manufacturing process of the thick film multilayer wiring substrate,
It is possible to eliminate the step of forming a thin film matching pattern which is necessary in the conventional substrate structure. Therefore, the number of thin film processes is reduced, and the manufacturing cost can be kept low.
【００１６】また本発明では、上記の厚膜多層配線基板
の表面に形成された厚膜整合パターンの表面に対し、研
磨布と遊離砥粒を工具として用いた研磨加工を施し、厚
膜整合パターンの表面に付着した異物や汚れ、また、金
属である配線材が酸化してできた酸化膜を除去するとと
もに、厚膜整合パターンの表面を鏡面に加工する。これ
により、厚膜整合パターンの表面に付着した異物や汚
れ、酸化膜、また、厚膜整合パターンの表面にできた傷
等が原因となり、薄膜配線の形成時に問題となる導通不
良、密着強度不足等を防止することができ、信頼性の高
い混成基板を製造することができる。Further, according to the present invention, the surface of the thick film matching pattern formed on the surface of the thick film multilayer wiring board is subjected to polishing using a polishing cloth and loose abrasive grains as a tool to obtain the thick film matching pattern. The foreign matter and the dirt attached to the surface of the film are removed, and the oxide film formed by the oxidation of the metal wiring material is removed, and the surface of the thick film matching pattern is processed into a mirror surface. As a result, foreign matter or dirt attached to the surface of the thick film matching pattern, an oxide film, or scratches on the surface of the thick film matching pattern cause problems such as poor continuity and insufficient adhesion strength when forming thin film wiring. Etc. can be prevented, and a highly reliable hybrid substrate can be manufactured.
【００１７】さらに本発明では、上記の厚膜多層配線基
板の表面に形成された厚膜整合パターンの表面に対し、
押し込み圧力を加えたときの研磨布表面の変形量が８μ
m／ｋｐａ以上の研磨布と遊離砥粒を用いた研磨加工を
施し、厚膜整合パターンの表面に付着した異物や汚れ、
また、金属である配線材が酸化してできた酸化膜を基板
全面にわたってむらの無い状態で除去するとともに、厚
膜整合パターンの表面を基板全面にわたって鏡面にす
る。これにより、厚膜整合パターンの表面に付着した異
物や汚れ、酸化膜、また、厚膜整合パターンの表面にで
きた傷等が原因となり、薄膜配線の形成時に問題となる
導通不良、密着強度不足等を防止することができ、信頼
性の高い混成基板を製造することができる。Further, in the present invention, the surface of the thick film matching pattern formed on the surface of the thick film multilayer wiring board is
The amount of deformation of the polishing cloth surface when pressing force is 8μ
Foreign matter or dirt adhering to the surface of the thick film matching pattern is obtained by polishing with a polishing cloth of m / kpa or more and loose abrasive grains.
Further, the oxide film formed by oxidizing the metal wiring material is removed over the entire surface of the substrate without unevenness, and the surface of the thick film matching pattern is mirror-finished over the entire surface of the substrate. As a result, foreign matter or dirt attached to the surface of the thick film matching pattern, an oxide film, or scratches on the surface of the thick film matching pattern cause problems such as poor continuity and insufficient adhesion strength when forming thin film wiring. Etc. can be prevented, and a highly reliable hybrid substrate can be manufactured.
【００１８】[0018]
【実施例】以下、本発明の厚膜／薄膜混成基板の構造及
び製造工程の実施例について説明する。EXAMPLES Examples of the structure and manufacturing process of the thick film / thin film hybrid substrate of the present invention will be described below.
【００１９】図１は、本発明の厚膜／薄膜混成基板の表
面の拡大断面図である。本発明の厚膜多層配線基板１の
製造工程において、内部配線４とは別に厚膜整合パター
ン７を形成する。このとき、図１に示すように厚膜整合
パターン７の表面が厚膜多層配線基板１の表面に露出す
るように配置することが必要である。また、そして本発
明の混成基板では、厚膜整合パターン７を厚膜多層配線
基板の内部配線４（スルーホールと呼ぶ）上に配置し、
厚膜整合パターン７上に薄膜金属配線６を薄膜工程によ
り形成することで、基板材３と内部配線４により構成さ
れる厚膜多層配線基板１の厚膜配線回路と薄膜金属配線
６と絶縁膜５により構成される薄膜配線回路を結線し、
１つの回路を形成する構造にしている。FIG. 1 is an enlarged cross-sectional view of the surface of the thick film / thin film hybrid substrate of the present invention. In the manufacturing process of the thick film multilayer wiring board 1 of the present invention, the thick film matching pattern 7 is formed separately from the internal wiring 4. At this time, it is necessary to arrange so that the surface of the thick film matching pattern 7 is exposed to the surface of the thick film multilayer wiring board 1 as shown in FIG. Further, in the hybrid substrate of the present invention, the thick film matching pattern 7 is arranged on the internal wiring 4 (called a through hole) of the thick film multilayer wiring substrate,
By forming the thin film metal wiring 6 on the thick film matching pattern 7 by the thin film process, the thick film wiring circuit, the thin film metal wiring 6, and the insulating film of the thick film multilayer wiring board 1 configured by the substrate material 3 and the internal wiring 4 are formed. Connect the thin film wiring circuit composed of 5,
The structure is such that one circuit is formed.
【００２０】本発明の厚膜／薄膜混成基板では、厚膜回
路と薄膜回路を結線するための整合パターンを厚膜多層
配線基板１の製造工程において形成するため、基板の表
面に直接薄膜金属配線を形成しない。したがって、厚膜
多層配線基板１の表面を平坦化する加工工程が不必要に
なり、基板の表面にボイドと材料間隙間等の欠陥の露出
に起因する問題や基板の応力バランスの崩れに起因する
問題を回避できる。In the thick film / thin film hybrid substrate of the present invention, since the matching pattern for connecting the thick film circuit and the thin film circuit is formed in the manufacturing process of the thick film multilayer wiring substrate 1, the thin film metal wiring is directly formed on the surface of the substrate. Does not form. Therefore, a processing step for flattening the surface of the thick-film multilayer wiring substrate 1 becomes unnecessary, resulting in a problem caused by the exposure of defects such as voids and material gaps on the surface of the substrate and a stress balance loss of the substrate. You can avoid the problem.
【００２１】上記説明したように、本発明の厚膜／薄膜
混成基板では、従来の混成基板における問題を回避する
ことができるが、従来の混成基板の構造では問題となら
なかった新しい問題が生じる。この新しい問題について
以下に説明する。As described above, the thick film / thin film hybrid substrate of the present invention can avoid the problem in the conventional hybrid substrate, but causes a new problem which is not a problem in the structure of the conventional hybrid substrate. . This new problem is explained below.
【００２２】本発明の厚膜／薄膜混成基板に用いる厚膜
多層配線基板の概念図を図３に示す。焼結後の厚膜多層
配線基板１の形状としては、図３に示すように、反りが
生じており、その反り量Ｗ１としてはおよそ１０〜５０
μｍ程度である。この反りは、次のような原因で生じる
と考える。厚膜多層配線基板１は、基板材であるセラミ
ックスと配線材である金属を同時に焼き固める構造であ
るために、焼結時の温度変化にともない熱膨張係数の差
による内部応力を生じる。そして、焼結後に高温から常
温まで基板を冷却する際に、この内部応力が基板に反り
を生じさせることでバランスを保つと考えられる。よっ
て、反り量をコントロールすることは難しく、焼結条件
の最適化や加圧治具の精度向上を行っても簡単には改善
できない。また、基板の焼結時には、気孔率の高いセラ
ミック板に基板を挟んで加圧焼結するため、焼結後の基
板表面には、波長が数ｍｍの微小な凹凸が生じる。そし
て、その凹凸の高さＷ２は１０〜５０μｍ程度である。FIG. 3 shows a conceptual diagram of a thick film multilayer wiring substrate used in the thick film / thin film hybrid substrate of the present invention. As shown in FIG. 3, the shape of the thick film multilayer wiring board 1 after sintering has a warp, and the warp amount W1 is about 10 to 50.
It is about μm. This warpage is thought to occur due to the following reasons. Since the thick film multilayer wiring board 1 has a structure in which the ceramics that is the substrate material and the metal that is the wiring material are simultaneously hardened, internal stress is generated due to the difference in the coefficient of thermal expansion due to the temperature change during sintering. Then, when the substrate is cooled from a high temperature to a room temperature after sintering, it is considered that the internal stress causes a warp in the substrate to maintain the balance. Therefore, it is difficult to control the amount of warpage, and even if the sintering conditions are optimized or the accuracy of the pressing jig is improved, it cannot be easily improved. Further, when the substrate is sintered, the substrate is sandwiched between ceramic plates having a high porosity and pressure-sintered, so that minute irregularities having a wavelength of several mm occur on the surface of the substrate after sintering. The height W2 of the unevenness is about 10 to 50 μm.
【００２３】上記説明したように、焼結後の厚膜多層配
線基板には、反り及び表面の凹凸が生じる。このため、
従来の混成基板では、厚膜多層配線基板１の表面に薄膜
整合パターンを形成するため、研削加工やラッピング加
工に代表される平坦化加工を施し、反り及び表面の凹凸
を除去することで、平面度及び表面粗さを向上してい
る。これに対し、本発明の混成基板の構造では、厚膜整
合パターン７が厚膜多層配線基板１の表面に露出してい
るため、以下の問題が生じる。As described above, the thick film multilayer wiring board after sintering has warpage and surface irregularities. For this reason,
In the conventional hybrid substrate, in order to form a thin film matching pattern on the surface of the thick film multilayer wiring substrate 1, a flattening process typified by a grinding process or a lapping process is performed to remove warpage and unevenness of the surface, and thus a flat surface The degree and surface roughness are improved. On the other hand, in the structure of the hybrid substrate of the present invention, since the thick film matching pattern 7 is exposed on the surface of the thick film multilayer wiring substrate 1, the following problems occur.
【００２４】（１）焼結後の厚膜整合パターン７の表面
には、異物や汚れが付着している。これらの中には、超
音波洗浄では除去できないものもある。そして、これら
が厚膜整合パターン７の表面に付着したままの状態で薄
膜金属配線６を形成すると、薄膜金属配線６が厚膜整合
パターン７と密着せず、剥離してしまう不良（以下、密
着強度不足と呼ぶ）もしくは薄膜金属配線の断線不良等
の問題が発生する。(1) Foreign matter and dirt adhere to the surface of the thick film matching pattern 7 after sintering. Some of these cannot be removed by ultrasonic cleaning. If the thin-film metal wiring 6 is formed in a state where these are still attached to the surface of the thick-film matching pattern 7, the thin-film metal wiring 6 does not adhere to the thick-film matching pattern 7 and peels off (hereinafter referred to as “adhesion”). (Insufficient strength) or problems such as defective disconnection of thin film metal wiring occur.
【００２５】（２）厚膜多層配線基板１の配線材として
用いる金属の中には、酸化しやすいものがある。そし
て、厚膜整合パターン７の表面に酸化膜が存在すると、
その部分の電気抵抗が極端に大きくなるため、導通不良
の原因となる。(2) Some of the metals used as the wiring material of the thick film multilayer wiring board 1 are easily oxidized. When an oxide film exists on the surface of the thick film matching pattern 7,
Since the electric resistance of that portion becomes extremely large, it causes conduction failure.
【００２６】（３）焼結後の厚膜整合パターン７の表面
はざらついており、表面粗さが悪い。そして、表面粗さ
が悪いと、薄膜金属配線をスパッタしたときの密着性が
悪くなるとともに、絶縁膜５のぬれ性が悪くなり、混成
基板の信頼性が低下する。(3) The surface of the thick film matching pattern 7 after sintering is rough and the surface roughness is poor. If the surface roughness is poor, the adhesion of the thin film metal wiring when sputtered is poor, and the wettability of the insulating film 5 is poor, and the reliability of the hybrid substrate is reduced.
【００２７】以上のように、厚膜整合パターン７に薄膜
金属配線６を形成する場合には、厚膜整合パターン７に
付着した汚れ，異物，酸化膜を除去し、厚膜整合パター
ン７を鏡面に磨くことが必要である。本発明では、この
ための具体的な方法として研磨布と遊離砥粒を工具とし
て用いた研磨加工（代表的な研磨加工としてラッピング
とポリッシングがあるが、ここでの研磨加工は研磨布を
用いるためポリッシングである。しかも、研磨布に変形
特性の高く、倣い性の良い研磨布を用いているため倣い
ポリッシングである。以下、倣いポリッシングと呼ぶ）
を厚膜整合パターン７に施し、厚膜整合パターン７の表
面を鏡面に加工する研磨工程を、本発明の混成基板の製
造工程に付加した。As described above, when the thin film metal wiring 6 is formed on the thick film matching pattern 7, the dirt, foreign matter and oxide film adhering to the thick film matching pattern 7 are removed and the thick film matching pattern 7 is mirror-finished. It is necessary to polish it. In the present invention, as a specific method for this purpose, a polishing process using a polishing cloth and loose abrasive grains as a tool (representative polishing processes include lapping and polishing, but since the polishing process here uses a polishing cloth). Further, it is a polishing polishing because it uses a polishing cloth having a high deformation characteristic and a good copying property as the polishing cloth (hereinafter referred to as copying polishing).
Is applied to the thick film matching pattern 7 and the polishing step of processing the surface of the thick film matching pattern 7 into a mirror surface is added to the manufacturing process of the hybrid substrate of the present invention.
【００２８】次に、本発明の厚膜／薄膜混成基板の製造
工程を図４に示す。図４は薄膜配線層形成工程までの代
表的な工程を示しており、グリーンシート作成から焼結
工程までが厚膜多層配線基板の製造工程であり、本発明
の工程では、焼結工程後に研磨工程，洗浄工程を経た後
に薄膜配線層を形成している。各工程を以下に説明す
る。Next, the manufacturing process of the thick film / thin film hybrid substrate of the present invention is shown in FIG. FIG. 4 shows a typical process up to the thin film wiring layer forming process. The process from the green sheet preparation to the sintering process is the manufacturing process of the thick film multilayer wiring substrate. In the process of the present invention, polishing is performed after the sintering process. The thin film wiring layer is formed after the process and the cleaning process. Each step will be described below.
【００２９】１．基板材料であるセラミックスの粉体を
結合剤（バインダ）により固め、シート状にするグリー
ンシート作成工程 ２．グリーンシートにスルーホール用の穴を形成する穴
明け工程 ３．穴明けにより形成した穴にペースト状の金属配線材
を充填するとともに、ペースト状の金属配線材によりグ
リーンシート上に配線を形成する厚膜配線印刷工程 ４．印刷の終了したグリーンシートを積み重ね、グリー
ンシート数十層の多層配線体をつくる積層工程 ５．積層した多層配線体を加圧接着する圧着工程 ６．圧着した多層配線体を高温の炉で焼き固める焼結工
程 ７．焼結後に、基板表面にある厚膜整合パターンの表面
を鏡面状態に磨く研磨工程。1. 1. A green sheet making process in which ceramic powder, which is a substrate material, is hardened with a binder to form a sheet. Drilling process to form holes for through holes in the green sheet. 3. A thick film wiring printing step of filling a hole formed by punching with a paste-like metal wiring material and forming wiring on the green sheet with the paste-like metal wiring material. 4. Stacking process to stack the printed green sheets to make a multi-layered wiring board with dozens of green sheets. 5. Crimping process for pressure-bonding laminated multilayer wiring bodies Sintering step of baking and pressing the crimped multilayer wiring body in a high temperature furnace. After sintering, polishing process to polish the surface of the thick film matching pattern on the substrate surface to a mirror surface.
【００３０】８．研磨後の基板表面に付着した砥粒等の
異物を洗浄し、乾燥する洗浄工程 ９．研磨・洗浄後の基板表面に薄膜金属配線と絶縁膜に
より構成される薄膜配線層を形成する薄膜配線層形成工
程 以上の工程において、厚膜整合パターン７は、次のよう
に形成する。厚膜配線印刷工程において、グリーンシー
ト上に配線パターンを印刷し、この印刷したグリーンシ
ートが積層体の表面（第１層もしくは最下層）になるよ
うに配置する。そしてこれを圧着し、焼結することで厚
膜多層配線基板１の表面に厚膜整合パターン７が形成さ
れる。8. 8. A cleaning step of cleaning and drying foreign substances such as abrasive grains attached to the surface of the substrate after polishing Thin-Film Wiring Layer Forming Step of Forming a Thin-Film Wiring Layer Composed of Thin-Film Metal Wiring and an Insulating Film on the Polished / Washed Substrate Surface In the above steps, the thick-film matching pattern 7 is formed as follows. In the thick film wiring printing step, a wiring pattern is printed on the green sheet, and the printed green sheet is arranged so as to be the surface (first layer or bottom layer) of the laminate. Then, the thick film matching pattern 7 is formed on the surface of the thick film multilayer wiring board 1 by pressure bonding and sintering.
【００３１】次に、厚膜整合パターン７の表面を鏡面の
状態に磨くための研磨加工（倣いポリッシング）の実施
例にについて説明する。Next, an embodiment of polishing processing (copy polishing) for polishing the surface of the thick film matching pattern 7 to a mirror surface will be described.
【００３２】倣いポリッシングの概念図を図５を用いて
説明する。A conceptual diagram of copy polishing will be described with reference to FIG.
【００３３】ポリッシング盤としては、片面ポリッシン
グ盤を用いた。その構成としては、研磨布９を貼り付け
て回転する研磨定盤１０と、加工対象である厚膜多層配
線基板１を固定し、基板を自転させるためのワークホル
ダ１１と、ワークホルダに荷重を加え、厚膜多層配線基
板１と研磨布９の間に作用する研磨圧力を制御するため
の加圧シリンダ１２である。ここでの倣いポリッシング
では、研磨定盤１０とワークホルダ１１を回転運動させ
ることにより、厚膜多層配線基板１の加工対象面（基板
の表面）と研磨布９を早相対摺動させる。そして、その
間に研磨剤１３の入った研磨液を介在させることによ
り、研磨剤１３が微小量ずつ厚膜多層配線基板１の表面
を削り取り加工が進行する。そしてこのときの加工能率
は、研磨圧力、摺動距離、研磨剤の粒径に比例する。A single-sided polishing machine was used as the polishing machine. The structure is as follows: a polishing surface plate 10 to which a polishing cloth 9 is attached and rotated, a work holder 11 for fixing the thick film multilayer wiring substrate 1 to be processed and rotating the substrate, and a load to the work holder. In addition, it is a pressure cylinder 12 for controlling the polishing pressure acting between the thick film multilayer wiring substrate 1 and the polishing cloth 9. In the copying polishing here, the polishing surface plate 10 and the work holder 11 are rotationally moved, so that the surface to be processed (the surface of the substrate) of the thick film multilayer wiring substrate 1 and the polishing cloth 9 are relatively slid quickly. Then, by interposing a polishing liquid containing the polishing agent 13 therebetween, the polishing agent 13 scrapes off the surface of the thick-film multilayer wiring substrate 1 in minute amounts. The processing efficiency at this time is proportional to the polishing pressure, the sliding distance, and the particle size of the abrasive.
【００３４】また、ポリッシングをはじめとする研磨加
工は、研磨定盤もしくは研磨布と接触する加工対象面に
おいて、研磨圧力が高くなる部分から削れていく特性が
ある。したがって、図３に示すような反り及び表面の凹
凸がある基板をポリッシングにより加工すると、基板の
凸部は集中的に磨かれるが、研磨布と接触しない凹部は
ほとんど磨かれない。このように部分的に研磨量の差が
できると、厚膜多層配線基板１の表面には、鏡面に磨か
れる厚膜整合パターンと磨かれずに表面粗さの悪い整合
パターンが混在し、ムラ（以下、このムラを研磨ムラと
呼ぶ）ができる。この研磨ムラができると、厚膜多層配
線基板１の表面に表面粗さが悪く、異物や汚れ，酸化膜
が残っている厚膜整合パターンが存在するため、薄膜形
成時に断線不良等の問題が発生する。Further, the polishing process such as polishing has a characteristic that the surface to be processed which is in contact with the polishing platen or the polishing cloth is scraped from a portion where the polishing pressure is high. Therefore, when a substrate having a warp and surface irregularities as shown in FIG. 3 is processed by polishing, the convex portions of the substrate are intensively polished, but the concave portions that are not in contact with the polishing pad are hardly polished. When the difference in the polishing amount is partially generated in this way, the thick film multilayer wiring substrate 1 has a mixture of a thick film matching pattern that is polished to a mirror surface and a matching pattern that is not polished and has poor surface roughness, resulting in unevenness ( Hereinafter, this unevenness is referred to as polishing unevenness). If this uneven polishing occurs, the surface roughness of the thick-film multilayer wiring substrate 1 is poor, and there is a thick-film matching pattern with foreign matter, dirt, and oxide film remaining. appear.
【００３５】研磨ムラを解決するためには、基板の全面
に研磨布が接触し、研磨圧力が加わるような倣いポリッ
シング方法が必要である。このために、変形特性が高
く、倣い性の良い研磨布を用い、倣いポリッシングを行
った。In order to solve the unevenness of polishing, it is necessary to use a profile polishing method in which a polishing cloth comes into contact with the entire surface of the substrate and a polishing pressure is applied. For this purpose, a polishing polishing was performed using a polishing cloth having a high deformation characteristic and a good copying property.
【００３６】図６に研磨布の変形特性を測定した結果を
示す。この測定は、研磨布に圧力を加え、一定時間経過
したときの変形量を測定した結果である。ここでは、以
下の研磨布を対象に変形特性を測定した。FIG. 6 shows the results of measuring the deformation characteristics of the polishing cloth. This measurement is a result of measuring the amount of deformation when pressure is applied to the polishing cloth and a certain time has elapsed. Here, the deformation characteristics of the following polishing cloths were measured.
【００３７】（１）研磨布Ａ 硬質微細発泡ポリウレタ
ン研磨布 （２）研磨布Ｂ 発泡ポリウレタン研磨布(発泡直径：
小) （３）研磨布Ｃ 発泡ポリウレタン研磨布(発泡直径：
大) （４）研磨布Ｄ ナイロン繊維研磨布 図６の結果において、同一押し込み圧力の条件におい
て、変形量の大きい研磨布が変形特性が高く、倣い性の
良い研磨布あると言える。このことから、倣い性の良い
研磨布を上から順に並べると、研磨布Ｄ→研磨布Ｃ→研
磨布Ｂ→研磨布Ａとなる。(1) Polishing cloth A Hard fine polyurethane foam polishing cloth (2) Polishing cloth B Foaming polyurethane polishing cloth (foaming diameter:
(Small) (3) Polishing cloth C Foam polyurethane polishing cloth (foam diameter:
(Large) (4) Polishing cloth D Nylon fiber polishing cloth In the results of FIG. 6, it can be said that a polishing cloth having a large deformation amount has a high deformation characteristic and a good copying property under the condition of the same pushing pressure. From this, when polishing cloths having good copying properties are arranged in order from the top, polishing cloth D → polishing cloth C → polishing cloth B → polishing cloth A.
【００３８】特に、倣い性の良い研磨布Ｄと研磨布Ｃの
断面のＳＥＭ写真を図７に示す。研磨布Ｃは不織布のベ
ースに軟らかい発泡ポリウレタンを形成した研磨布であ
り、発泡直径が大きいことから、変形しやすく、倣い性
が良い。これに対し、研磨布Ｄは比較的軟らかいナイロ
ン繊維により構成された研磨布であり、ベースと毛の部
分の２層構造となっている。In particular, FIG. 7 shows SEM photographs of the cross sections of the polishing cloth D and the polishing cloth C which have good copying properties. The polishing cloth C is a polishing cloth in which soft foamed polyurethane is formed on the base of a non-woven fabric, and since it has a large foaming diameter, it is easily deformed and has a good copying property. On the other hand, the polishing cloth D is a polishing cloth composed of a relatively soft nylon fiber, and has a two-layer structure of the base and the bristles.
【００３９】以上の研磨布を用い、実際に厚膜多層配線
基板１に対してを倣いポリッシングを行った。研磨条件
を以下に示す。Using the above polishing cloth, the thick film multilayer wiring substrate 1 was actually copied and polished. The polishing conditions are shown below.
【００４０】加 工 機：片面ポリッシング盤 研 磨 液：シリカ系研磨液(研磨剤：ＳｉＯ2，砥粒径
０．３μｍ) 定盤回転数：５０ｒ／ｍｉｎ 研磨圧力 ：３ｋＰａ 研磨時間 ：１５，３０，６０，９０，１２０ｍｉｎ 研 磨 布：研磨布Ｂ，研磨布Ｃ，研磨布Ｄ， 基 板：厚膜多層配線基板 反り量５０μｍ前後、
表面の凹凸の高さ３０μｍ 上記条件により基板を倣いポリッシングしたときの加工
時間に対する鏡面化率を測定した結果を図８に示す。鏡
面化率の測定は、鏡面になった厚膜整合パターンと鏡面
にならなかった厚膜整合パターンの個数を調べ、これら
の比率として算出した。図８において、研磨布Ｄは３０
ｍｉｎの加工で厚膜整合パターンの全てが鏡面になった
のに対し、研磨布Ｃ，研磨布Ｂは１２０ｍｉｎ加工して
も鏡面にならない厚膜整合パターンが存在することがわ
かる。また、研磨布Ｃ，研磨布Ｂを比較すると、変形特
性が高く、倣い性の良い研磨布Ｃのほうが鏡面化率が高
いことがわかる。Processing machine: Single-side polishing machine Polishing solution: Silica-based polishing solution (polishing agent: SiO 2 , abrasive grain size 0.3 μm) Plate rotation speed: 50 r / min Polishing pressure: 3 kPa Polishing time: 15, 30 , 60, 90, 120min Polishing cloth: Polishing cloth B, Polishing cloth C, Polishing cloth D, Substrate: Thick film multilayer wiring board Warp amount around 50 μm,
The height of the surface irregularities is 30 μm. FIG. 8 shows the results of measuring the mirroring ratio with respect to the processing time when the substrate was profile-polished under the above conditions. The specularization rate was measured by examining the number of thick film matching patterns which became a mirror surface and the number of thick film matching patterns which did not become a mirror surface, and calculated as a ratio thereof. In FIG. 8, the polishing cloth D is 30
It can be seen that all of the thick film matching patterns are mirror-finished by the processing of min, whereas the polishing cloth C and the polishing cloth B have thick-film matching patterns that are not mirror-finished even after processing for 120 minutes. Further, when the polishing cloth C and the polishing cloth B are compared, it is found that the polishing cloth C having a high deformation characteristic and a good copying property has a higher mirroring rate.
【００４１】この厚膜整合パターンの鏡面化率は、基板
の反り量よりも、基板表面の凹凸の高さの影響を強く受
けると考えられる。そこで各研磨布において、厚膜整合
パターンの鏡面化率と基板表面の凹凸の高さの関係につ
いて測定を行った。測定結果を図９，このときの加工条
件を下記に示す。It is considered that the mirroring rate of the thick film matching pattern is more strongly influenced by the height of the unevenness on the substrate surface than the warp amount of the substrate. Therefore, with respect to each polishing cloth, the relationship between the mirroring rate of the thick film matching pattern and the height of the unevenness on the substrate surface was measured. The measurement results are shown in FIG. 9, and the processing conditions at this time are shown below.
【００４２】加 工 機：片面ポリッシング盤 研 磨 液：シリカ系研磨液(研磨剤：ＳｉＯ2，砥粒径
０．３μｍ) 定盤回転数：５０ｒ／ｍｉｎ 研磨圧力 ：３ｋＰａ 研磨時間 ：３０ｍｉｎ 研 磨 布：研磨布Ｂ，研磨布Ｃ，研磨布Ｄ， 基 板：厚膜多層配線基板 反り量５０μｍ前後、 図９において、変形特性の高い研磨布Ｄは、表面の凹凸
高さが４０μｍを超えても鏡面化率が１００％であり、
研磨ムラが生じないことがわかる。これに対し、研磨布
Ｄよりも変形特性が低い研磨布Ｃ，研磨布Ｂは、表面の
凹凸高さが高くなるにしたがい鏡面化率が低下している
ため、研磨ムラが生じている厚膜整合パターンの割合が
増えていることがわかる。Processing machine: Single-side polishing machine Polishing solution: Silica-based polishing solution (polishing agent: SiO 2 , abrasive grain size 0.3 μm) Plate rotation speed: 50 r / min Polishing pressure: 3 kPa Polishing time: 30 min Polishing Cloth: Polishing cloth B, polishing cloth C, polishing cloth D, substrate: thick film multilayer wiring board Warp amount around 50 μm, and in FIG. 9, polishing cloth D with high deformation characteristics has a surface unevenness height of more than 40 μm. Also has a mirror surface ratio of 100%,
It can be seen that polishing unevenness does not occur. On the other hand, the polishing cloth C and the polishing cloth B, which have lower deformation characteristics than the polishing cloth D, have a lower mirroring rate as the height of the unevenness of the surface becomes higher, and thus the thick film having uneven polishing occurs. It can be seen that the proportion of matching patterns is increasing.
【００４３】この結果より、研磨ムラは反りよりも表面
の凹凸高さの影響を受けやすく、研磨ムラを防止するた
めの研磨布としては、基板表面の凹凸の高さ以上の変形
特性が必要であると考えられる。よって、反りがあり、
しかも表面の凹凸の高さが１０〜５０μｍ程度ある厚膜
多層配線基板の厚膜整合パターンを研磨ムラなく倣いポ
リッシングするためには、押し込み圧力３ｋｐａを加え
たときの変形量として２０μｍ以上は少なくとも必要で
あると考える。また、これを言い替えると、一般的な研
磨圧力２〜１５ｋｐａの範囲において、８μｍ／ｋｐａ
以上の変形特性を持った研磨布を用い、倣いポリッシン
グを行えば、反り量１０〜５０μｍ程度，表面の凹凸の
高さ１０〜５０μｍの厚膜多層配線基板に対し、基板の
全面にわたって厚膜整合パターンを鏡面化できると言え
る。From this result, the unevenness of polishing is more affected by the height of the unevenness of the surface than the warpage, and the polishing cloth for preventing the unevenness of polishing is required to have a deformation characteristic higher than the height of the unevenness of the substrate surface. It is believed that there is. Therefore, there is a warp,
Moreover, in order to perform polishing and polishing of the thick film matching pattern of the thick film multi-layer wiring board having a surface unevenness of about 10 to 50 μm without polishing unevenness, a deformation amount of at least 20 μm when a pressing pressure of 3 kpa is required is required. I believe that. In other words, in a general polishing pressure range of 2 to 15 kpa, 8 μm / kpa
If the polishing cloth having the above-mentioned deformation characteristics is used and the profiling polishing is performed, a thick film multi-layer wiring board having a warp amount of about 10 to 50 μm and a height of unevenness of the surface of 10 to 50 μm can be thick film-matched over the entire surface of the substrate. It can be said that the pattern can be mirror-finished.
【００４４】また、研磨布Ｄを用い、下記条件により倣
いポリッシングした厚膜多層配線基板（表裏面ともに研
磨ムラなし）にスパッタリング，マスク形成，露光，エ
ッチング等の薄膜工程により薄膜回路を形成したが、厚
膜整合パターン表面に起因する断線不良や導通不良，薄
膜パターンの剥がれ等の不良は発生せず、信頼性の高い
薄膜・厚膜混成基板を造ることができた。Further, using the polishing cloth D, a thin film circuit was formed on a thick film multilayer wiring substrate (there was no polishing unevenness on both the front and back surfaces) by the following conditions by a thin film process such as sputtering, mask formation, exposure and etching. As a result, there were no defects such as disconnection defects and conduction defects due to the thick film matching pattern surface, and peeling of the thin film pattern, and a highly reliable thin film / thick film hybrid substrate could be manufactured.
【００４５】加 工 機：片面ポリッシング盤 研 磨 液：シリカ系研磨液(研磨剤：ＳｉＯ2，砥粒径
０．３μｍ) 定盤回転数：５０ｒ／ｍｉｎ 研磨圧力 ：３ｋＰａ 研磨時間 ：３０ｍｉｎ 研 磨 布：研磨布Ｄ また、上記倣いポリッシングの条件における厚膜整合パ
ターン表面の加工量としては、０．５〜１μｍ程度であ
るため、これにより厚膜多層配線基板の内部にあるボイ
ドや材料間隙間等の欠陥は露出しない。Processing machine: Single-side polishing machine Polishing solution: Silica-based polishing solution (polishing agent: SiO 2 , abrasive grain size 0.3 μm) Plate rotation speed: 50 r / min Polishing pressure: 3 kPa Polishing time: 30 min Polishing Cloth: Polishing cloth D Further, the processing amount of the surface of the thick film matching pattern under the conditions of the above-mentioned copying polishing is about 0.5 to 1 μm, so that voids and material gaps inside the thick film multilayer wiring board Defects such as are not exposed.
【００４６】[0046]
【発明の効果】厚膜／薄膜混成基板において、厚膜多層
配線基板の表面露出する位置に厚膜パターン（厚膜整合
パターン）を焼結工程前にあらかじめ形成し、厚膜整合
パターンと薄膜金属配線を結線し、厚膜配線回路と薄膜
配線回路を結合する基板構造にすることで、従来の厚膜
／薄膜混成基板の製造工程において問題となる厚膜基板
表面の欠陥に起因する薄膜配線の断線不良および基板内
部応力のバランスの崩れに起因するクラック等の問題を
回避することができる。また、本発明の基板構造では、
整合パターンを厚膜多層配線基板の製造工程において形
成するため、従来の基板構造において必要となる薄膜整
合パターンの形成工程を除くことができる。このため、
薄膜工程の工程数が少なくなり、製造コストを低く抑え
ることができる。In the thick film / thin film hybrid substrate, the thick film pattern (thick film matching pattern) is formed in advance at the position where the surface of the thick film multilayer wiring board is exposed before the sintering process. By connecting the wiring and forming a substrate structure that connects the thick film wiring circuit and the thin film wiring circuit, the thin film wiring caused by defects on the surface of the thick film substrate, which is a problem in the manufacturing process of the conventional thick film / thin film hybrid substrate, It is possible to avoid problems such as disconnection defects and cracks due to the imbalance of the internal stress of the substrate. Further, in the substrate structure of the present invention,
Since the matching pattern is formed in the manufacturing process of the thick film multilayer wiring board, the step of forming the thin film matching pattern, which is necessary in the conventional substrate structure, can be omitted. For this reason,
The number of thin film processes is reduced, and the manufacturing cost can be kept low.
【００４７】また、上記厚膜／薄膜混成基板において、
厚膜多層配線基板の表面に形成された厚膜整合パターン
の表面に対し、押し込み圧力を加えたときの研磨布表面
の変形量が８μm／ｋｐａ以上の研磨布と遊離砥粒を用
いた研磨加工を施し、厚膜整合パターンの表面に付着し
た異物や汚れ、また、金属である配線材が酸化してでき
た酸化膜を基板全面にわたってムラの無い状態で除去す
るとともに、厚膜整合パターンの表面を基板全面にわた
って鏡面に加工する。これにより、厚膜整合パターンの
表面に付着した異物や汚れ、酸化膜、また、厚膜整合パ
ターンの表面にできた傷等が原因となり、薄膜金属配線
の形成時に問題となる導通不良、密着強度不足等を防止
することができ、信頼性の高い混成基板を製造すること
ができる。In the thick film / thin film hybrid substrate,
Polishing process using a polishing cloth and free abrasive grains with a deformation amount of 8 μm / kpa or more on the surface of the polishing cloth when pressing pressure is applied to the surface of the thick film matching pattern formed on the surface of the thick film multilayer wiring board. To remove foreign matter and dirt attached to the surface of the thick film matching pattern, and the oxide film formed by the oxidation of the metal wiring material over the entire surface of the substrate without unevenness. Is processed into a mirror surface over the entire surface of the substrate. As a result, foreign matter or dirt adhering to the surface of the thick film matching pattern, an oxide film, or scratches on the surface of the thick film matching pattern can cause problems such as conduction defects and adhesion strength when forming thin film metal wiring. A shortage or the like can be prevented, and a highly reliable hybrid substrate can be manufactured.
【図１】本発明の厚膜／薄膜混成基板表面の拡大断面図
である。FIG. 1 is an enlarged cross-sectional view of a thick film / thin film hybrid substrate surface of the present invention.
【図２】従来の厚膜／薄膜混成基板表面の拡大断面図で
ある。FIG. 2 is an enlarged cross-sectional view of the surface of a conventional thick film / thin film hybrid substrate.
【図３】本発明の厚膜多層配線基板の概念図である。FIG. 3 is a conceptual diagram of a thick film multilayer wiring board of the present invention.
【図４】本発明の厚膜／薄膜混成基板の製造プロセスで
ある。FIG. 4 is a manufacturing process of a thick film / thin film hybrid substrate of the present invention.
【図５】片面ポリッシングの概念図である。FIG. 5 is a conceptual diagram of single-side polishing.
【図６】研磨布の変形特性の測定結果の図である。FIG. 6 is a diagram showing measurement results of deformation characteristics of a polishing cloth.
【図７】研磨布断面のＳＥＭ写真である。FIG. 7 is an SEM photograph of a cross section of a polishing cloth.
【図８】研磨布と厚膜整合パターンの鏡面化率の関係を
示す図である。FIG. 8 is a view showing a relationship between a polishing cloth and a mirror-finishing rate of a thick film matching pattern.
【図９】基板表面の凹凸高さと厚膜整合パターンの鏡面
化率の関係を示す図である。FIG. 9 is a diagram showing the relationship between the height of irregularities on the surface of the substrate and the mirroring rate of the thick film matching pattern.
１…厚膜多層配線基板 ２…薄膜配線層 ３…厚膜多層配線基板の基板材（セラミックス） ４…厚膜多層配線基板の内部配線（スルーホール，金
属） ５…絶縁膜（樹脂系材料） ６…薄膜金属配線 ７…厚膜多層配線基板表面に形成した厚膜整合パターン ８…厚膜多層配線基板表面に形成した薄膜整合パターン ９…研磨布 １０…研磨定盤 １１…基板ホルダー １２…加圧シリンダ １３…研磨砥粒DESCRIPTION OF SYMBOLS 1 ... Thick film multilayer wiring board 2 ... Thin film wiring layer 3 ... Substrate material (ceramics) of thick film multilayer wiring board 4 ... Internal wiring (through hole, metal) of thick film multilayer wiring board 5 ... Insulating film (resin-based material) 6 ... Thin film metal wiring 7 ... Thick film matching pattern formed on thick film multilayer wiring substrate surface 8 ... Thin film matching pattern formed on thick film multilayer wiring substrate surface 9 ... Polishing cloth 10 ... Polishing surface plate 11 ... Substrate holder 12 ... Addition Pressure cylinder 13 ... Abrasive grains
───────────────────────────────────────────────────── フロントページの続き (72)発明者 森田 健二 神奈川県秦野市堀山下１番地株式会社日立 製作所汎用コンピュータ事業部内 ─────────────────────────────────────────────────── ─── Continued Front Page (72) Inventor Kenji Morita 1 Horiyamashita, Hadano City, Kanagawa Prefecture Hitachi, Ltd. General-purpose computer division
Claims (6)
と金属からなる配線材により構成された厚膜多層配線基
板上に薄膜金属配線と絶縁膜により構成される薄膜配線
層を形成した厚膜／薄膜混成基板において、厚膜多層配
線基板の表面の露出する位置に、薄膜金属配線と結線す
るための厚膜配線を形成したことを特徴とする厚膜／薄
膜混成基板。1. A thick film / thick film in which a thin film wiring layer composed of a thin film metal wiring and an insulating film is formed on a thick film multilayer wiring substrate composed of a substrate material made of a brittle material such as ceramics and a wiring material made of a metal. In the thin film hybrid substrate, a thick film / thin film hybrid substrate characterized in that a thick film wiring for connecting with a thin film metal wiring is formed at an exposed position on the surface of the thick film multilayer wiring substrate.
たことを特徴とする厚膜／薄膜混成基板。2. A thick film / thin film hybrid substrate in which the surface of the thick film wiring according to claim 1 is mirror-finished.
と金属からなる配線材により構成された厚膜多層配線基
板上に薄膜金属配線と絶縁膜により構成される薄膜配線
層を形成した厚膜／薄膜混成基板の厚膜配線の加工方法
において、厚膜多層配線基板表面に露出した薄膜金属配
線と結線するための厚膜配線の表面を、研磨布と遊離砥
粒を用いた研磨加工により加工することを特徴とする厚
膜配線の加工方法。3. A thick film / thick film in which a thin film wiring layer composed of a thin film metal wiring and an insulating film is formed on a thick film multilayer wiring substrate composed of a substrate material made of a brittle material such as ceramics and a wiring material made of a metal. In the method of processing thick film wiring of a thin film hybrid substrate, the surface of the thick film wiring for connecting with the thin film metal wiring exposed on the surface of the thick film multilayer wiring board is processed by polishing using a polishing cloth and loose abrasive grains. A method for processing thick film wiring, characterized in that
と金属からなる配線材により構成された厚膜多層配線基
板上に薄膜金属配線と絶縁膜により構成される薄膜配線
層を形成した厚膜／薄膜混成基板の厚膜配線の加工方法
において、厚膜多層配線基板表面に露出した薄膜金属配
線と結線するための厚膜配線の表面を、押し込み圧力を
加えたときの研磨布表面の変形量ｄが、８μm／ｋｐａ
≦ｄの条件を満たす研磨布と遊離砥粒を用いた研磨加工
により加工することを特徴とする厚膜配線の加工方法。4. A thick film / thick film formed by forming a thin film wiring layer composed of a thin film metal wiring and an insulating film on a thick film multi-layer wiring substrate composed of a substrate material made of a brittle material such as ceramics and a wiring material made of a metal. In the method of processing thick film wiring of a thin film hybrid substrate, the amount of deformation d of the polishing cloth surface when pressing pressure is applied to the surface of the thick film wiring for connecting with the thin film metal wiring exposed on the surface of the thick film multilayer wiring board. But 8 μm / kpa
A method for processing thick film wiring, characterized by processing by polishing using a polishing cloth satisfying the condition of ≤d and free abrasive grains.
おいて、以下の工程よりなることを特徴とする厚膜／薄
膜混成基板の製造方法。 （１）セラミックスの粉体を固め、シート状にするグリ
ーンシート作成工程、（２）該シートにスルーホール用
の穴を形成する穴明け工程、（３）ペースト状の金属配
線材によりグリーンシート上に配線を形成する厚膜配線
印刷工程、（４）グリーンシートを積み重ね、多層配線
体を作る積層工程、（５）積層した多層配線体を加圧接
着する圧着工程、（６）多層配線体を高温の炉で焼固め
る焼結工程、（７）基板表面の厚膜整合パターンの表面
を鏡面状態に磨く倣いポリッシング工程、（８）基板表
面に付着した砥粒等の異物を洗浄し乾燥する洗浄工程、
（９）基板表面に薄膜金属配線と絶縁膜により構成され
る薄膜配線層を構成する薄膜配線層形成工程5. A method for producing a thick film / thin film hybrid substrate, comprising the following steps in a method for producing a thick film / thin film hybrid substrate. (1) A step of forming a green sheet by solidifying ceramic powder to form a sheet, (2) A step of forming a hole for a through hole in the sheet, and (3) A green sheet with a paste-like metal wiring material. A thick film wiring printing step of forming wiring on the substrate, (4) a stacking step of stacking green sheets to form a multilayer wiring body, (5) a pressure bonding step of pressure-bonding the stacked multilayer wiring body, and (6) a multilayer wiring body. Sintering step of baking in a high-temperature furnace, (7) Copying polishing step of polishing the surface of the thick film matching pattern on the substrate surface to a mirror surface state, (8) Cleaning by cleaning foreign substances such as abrasive grains adhering to the substrate surface and drying Process,
(9) Thin-film wiring layer forming step of forming a thin-film wiring layer composed of a thin-film metal wiring and an insulating film on the substrate surface
を組み込んだ計算機。6. A computer incorporating the thick film / thin film hybrid substrate according to claim 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25579695A JPH0983144A (en) | 1995-09-08 | 1995-09-08 | Thick film/thin film hybrid substrate and its processing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25579695A JPH0983144A (en) | 1995-09-08 | 1995-09-08 | Thick film/thin film hybrid substrate and its processing method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0983144A true JPH0983144A (en) | 1997-03-28 |
Family
ID=17283759
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP25579695A Pending JPH0983144A (en) | 1995-09-08 | 1995-09-08 | Thick film/thin film hybrid substrate and its processing method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0983144A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6329715B1 (en) | 1996-09-20 | 2001-12-11 | Tdk Corporation | Passive electronic parts, IC parts, and wafer |
-
1995
- 1995-09-08 JP JP25579695A patent/JPH0983144A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6329715B1 (en) | 1996-09-20 | 2001-12-11 | Tdk Corporation | Passive electronic parts, IC parts, and wafer |
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