JPH0978263A - Chromium etching device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To prevent the adverse influence of deposits by a Cr etching liquid and to prevent the degradation in yield and the increase in the quantities of the parts to be used by pouring fluid on the peripheral parts on the side opposite to the gravity direction of the inlet of the inside wall surfaces of a Cr etching vessel. SOLUTION: A material 30 to be etched is carried into the etching vessel 2 via plural rollers 1A of a transporting path 1 from the inlet 20 having a shutter 2B provided with a wall part 2A. The etching liquid mainly composed of ceric ammonium nitrate is sprayed from plural nozzles 6 to this material 30 to be etched to etch the Cr layer formed on its front surface. The fluid, more preferably, the Cr etching liquid is poured to the peripheral parts on the side opposite to the gravity direction of at least the inlet of the inside wall surfaces from the fluid ejecting nozzles 40A, 40B arranged above the inlet 20 of this Cr etching device.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a Cr etching apparatus, and more particularly to a Cr etching apparatus used in the manufacture of liquid crystal display devices.

[0002]

2. Description of the Related Art For example, a liquid crystal display device is provided with transparent substrates which are arranged to face each other with a liquid crystal interposed therebetween, and light transmission in each pixel formed in a matrix on the surface of the transparent substrate can be independently controlled. Has been done.

Therefore, a signal line and electrodes connected to the signal line are finely and complicatedly processed on the liquid crystal side surface of one of the transparent substrates. .

There is known one using a Cr (chrome) layer as such a signal line or an electrode, and like other metal layers, it is constructed by a selective etching method using a so-called photolithography technique. Has become.

Here, the Cr etching apparatus for selectively etching the Cr layer has substantially the same structure as the etching apparatus for selectively etching the other metal layers except that the etching solution is different. ing. Also, C
As the r etching solution, a solution mainly containing cerium ammonium nitrate is used.

That is, an etching tank and a water washing layer are provided in the transport direction of a transparent substrate having a Cr layer formed on the main surface thereof and a photoresist serving as a mask formed on the surface thereof (hereinafter referred to as an etching target material). (In some cases, a plurality of them are provided) are arranged side by side, and the material to be etched is first subjected to selective etching in an etching bath and then washed in water.

And, in the Cr etching apparatus,
As a result of its long-term use, solidified deposits, for example sherbet-like, will remain on the inner wall surface of the etching. The precipitate is generated when a part of the sprayed Cr etching liquid adheres to the inner wall surface and is dried.

Further, powdery deposits are also generated in the tanks provided in the etching tank and the water washing tank. This precipitate is Cr
It is known that this occurs when the pH of the etching solution increases. It is considered that the increase in pH occurs when absorbing the moisture or replacing the etching solution adhering to the material to be etched in the washing tank.

As described above, the Cr etching solution produces two kinds of precipitates.

[0010]

However, due to such deposits, it has been pointed out that the production yield of liquid crystal display devices is reduced and the amount of parts used is increased.

Therefore, the cause of this has been investigated. The etching tank is provided with an inlet for guiding the material to be etched to be conveyed, and when the material to be etched passes through the inlet, one of the sherbet-like precipitates deposited on the inner wall surface of the etching tank is provided. It was confirmed that the part dropped and adhered to the material to be etched. As described above, since the signal lines, etc. are finely and complicatedly formed on the main surface of the transparent substrate, the cause of the disconnection or the signal lines formed after that even if the deposits are slightly dropped It had become a cause of an electrical short circuit with etc.

A filter is provided immediately before the etching liquid and pure water are used and in the tank for storing the etching liquid and pure water.

The generation of powdery deposits promotes the clogging of these filters, shortening the filter life and increasing the usage amount.

The present invention has been made under these circumstances, and an object thereof is to provide a Cr etching apparatus which prevents adverse effects of Cr etching liquid on precipitates.

[0015]

SUMMARY OF THE INVENTION Among the inventions disclosed in the present application, the outline of a representative one will be briefly described.
It is as follows.

That is, in an Cr etching apparatus provided with an etching tank for spraying at least a Cr etching liquid, and provided with an inlet for guiding the conveyed member to be etched into the inside of the etching tank, A means for pouring a fluid is provided at least in a peripheral portion of the inlet opposite to the gravity direction.

[0017]

The Cr etching apparatus thus constructed is
Since the fluid is poured into the peripheral portion above the inlet, the deposit of the Cr etching liquid is unlikely to remain in this portion.

Therefore, when the material to be etched passes through the inlet, a part of the precipitate deposited on the inner wall surface of the etching tank does not drop onto the material to be etched.

Therefore, it becomes possible to prevent the adverse effects of the deposits of the Cr etching liquid on the material to be etched.

In this case, by using a Cr etching liquid as the fluid, during spraying during the etching process,
That is, since the Cr etching liquid is periodically poured, the above-mentioned effect becomes remarkable.

[0021]

FIG. 2 is a schematic diagram showing an embodiment of a Cr etching apparatus to which the present invention is applied.

In the figure, there is a transport path 1 through which the material to be etched is transported, and along the transport direction of this transport path 1, an etching bath 2, a first washing bath 3, a second washing bath 4, The 3rd washing tank 5 is installed in parallel.

In this embodiment, the material to be etched is, for example, one of the transparent substrates arranged to face each other with a liquid crystal in between, and is formed on the main surface of the transparent substrate. It is intended for those having a mask for selective etching formed on the surface of the Cr layer.

The etching tank 2 is provided with a plurality of nozzles 6 for spraying a Cr etching liquid on the upper portion thereof, and the Cr etching liquid from the nozzles 6 is sprayed onto the material to be etched on the conveying path 1. ing.

The Cr etching liquid sprayed from the nozzle 6 is assembled from the etching tank 7 via the pump 8 and the filter 9. Further, the Cr etching liquid used for etching in the etching tank 2 is as described above. It is circulated to the etching tank 7.

That is, the Cr etching liquid used for etching is reused, and the Cr etching liquid is circulated in the etching tank 7 itself through the pump 10 and the filter 11. There is.

The first washing tank 3 is provided with a plurality of nozzles 12 for spraying the washing water on the upper part thereof, and the washing water from the nozzles 12 is sprayed on the material to be etched on the conveying path 1. ing.

The cleaning water sprayed from the nozzle 12 is assembled from the cleaning water tank 13 via the pump 14 and the filter 15, and the adjacent second
The washing water used for washing in the washing tank 4 is circulated to the washing water tank 13.

That is, the cleaning water used for cleaning is reused, and the cleaning water is circulated in the cleaning water tank 13 itself through the pump 16 and the filter 17. .

The second washing tank 4 and the third washing tank 5
Also has the same configuration.

Here, pure cleaning water is supplied to the final-stage cleaning water tank 13 in the carrying direction, whereby each cleaning water tank 13 is arranged in the direction opposite to the carrying direction. Its purity is being reduced. This is to make the cleaning water pure and improve the cleaning effect when sequentially cleaning the first cleaning tank 4, the second cleaning tank 4, and the third cleaning tank 5.

Example 1. FIG. 1 is a detailed view showing the periphery (indicated by a dotted circle in FIG. 2) of an inlet 20 of the material to be etched that is conveyed along the conveying path 1 in the etching tank 2.

In the figure, a plurality of rollers 1 arranged side by side
There is a transport path 1 constituted by A, and a shutter 2B is provided on a wall portion 2A of an etching tank 2 through which the transport path 1 penetrates.
An entrance 20 is provided. That is, the shutter 2B is provided only when the material 30 to be etched being conveyed along the conveying path 1 is conveyed into the etching tank 2.
Is automatically opened so that it can pass through the entrance 20.

The wall portion 2A near the inlet 20
Of these, fluid extraction nozzles 40A, 40B for pouring fluid into the inner wall surface and the outer wall surface in the upper part of the inlet 20 are provided. That is, the fluid pouring nozzles 40A, 40B
The pouring fluid from the above prevents the main component of the Cr etching liquid from precipitating on the wall surface above the inlet 20 in particular.

In the Cr etching apparatus having the above-described structure, when the material 30 to be etched passes through the inlet 20,
A part of the deposit deposited on the wall surface of the etching tank 2 does not drop onto the material to be etched 30.

Therefore, it is possible to prevent the adverse effect of the deposits of the Cr etching liquid on the material to be etched 30.

In this embodiment, the fluid pouring nozzle 40B is provided also on the outer wall surface of the etching tank 2. However, if the fluid pouring nozzle 40A on the inner wall surface is provided, it is not necessarily provided. It goes without saying that it is good. This is because the adverse effect on the material to be etched 30 is largely due to the precipitates deposited on the inner wall surface.

Embodiment 2 FIG . FIG. 3 is a diagram corresponding to FIG. 1. Those having the same reference numerals as in FIG. 1 have the same function.

The structure different from that shown in FIG.
A'and 40B 'have the same structure as the nozzle 6, and simultaneously spray the Cr etching liquid for etching and spray the Cr etching liquid from the fluid pouring nozzles 40A', 40B '. .

Even in this case, the same effect as that of the first embodiment can be obtained, and since the Cr etching solution is periodically poured, the above-mentioned effect becomes remarkable.

In this case as well, it goes without saying that the fluid pouring nozzle 40B 'provided on the outer wall surface of the etching tank 2 may be omitted.

Embodiment 3 FIG . FIG. 4 is a diagram corresponding to FIG. 1. Those having the same reference numerals as in FIG. 1 have the same function.

The structure different from that of FIG.
Although A and 40B are not particularly provided, the same effect as when the fluid ejection nozzles 40A and 40B are provided is provided.

That is, as shown in the figure, a cover 50 extending from the peripheral portion above the inlet 20 on the inner wall surface of the etching tank 2 is provided, and the Cr etching liquid sprayed from the nozzle 6 is provided. A portion is configured to descend along the cover 50.

In the case of such a structure, the Cr etching solution flows in the portion of the cover 50 that is hung down on the conveying path 1 and no deposits are deposited, and the inlet 20 of the etching tank 2 has the cover 50. Because it is covered by
It goes without saying that the deposit is not deposited. Further, the effect is recognized even when the lower cover 50 is not provided.

Example 4. FIG. 5 is a diagram corresponding to FIG. 2, and the same reference numerals as those in FIG. 2 have the same functions. In this embodiment, the inlet 20 of the etching bath 2 has any one of the structures of the first to third embodiments.

The structure different from that of FIG. 2 lies in the Cr etching liquid tank 7 and the cleaning water tank 13. That is, Cr
The etching liquid tank 7 is provided with a plurality of drawing walls 60 for causing the accumulated fluid therein to meander and move in the direction of gravity and in the direction opposite to that direction. The flush water tank 13 has a completely similar configuration.

In this case, a substance such as Ce (OH) ₄ is likely to precipitate on the bottom of the Cr etching liquid tank 7A, and the Cr etching liquid tanks 7B and 7B are formed.
As it becomes C, the substance is hardly contained. Therefore, the life of the filters 9 and 11 is improved. In the cleaning water tank 13, Ce is also contained in the cleaning water.
Since (OH) _{4 and the} like are contained, the same effect can be obtained.

In the fourth embodiment, the etching bath 2
Although the inlet 20 has been described as having the configuration of any one of the first to third embodiments, it goes without saying that such a configuration does not necessarily have to be employed.

Further, in each of the above-described embodiments, the material to be etched 30 is one of the transparent substrates arranged to face each other with the liquid crystal interposed therebetween, and is formed on the main surface of the transparent substrate. This is intended for the case where a mask for selective etching is formed on the surface of the Cr layer. However, it goes without saying that the members are not necessarily limited to such members. This is because it can be applied to a member in the process of manufacturing an electronic component that requires fine processing of the Cr layer.

[0051]

As is apparent from the above description,
According to the Cr etching apparatus of the present invention, it is possible to prevent the adverse effects of the deposits of the Cr etching liquid on the material to be etched.

[Brief description of drawings]

FIG. 1 is a main part configuration diagram showing an embodiment of a Cr etching apparatus according to the present invention.

FIG. 2 is a schematic configuration diagram of an embodiment of a Cr etching apparatus to which the present invention is applied.

FIG. 3 is a main part configuration diagram showing another embodiment of the Cr etching apparatus according to the present invention.

FIG. 4 is a main part configuration diagram showing another embodiment of the Cr etching apparatus according to the present invention.

FIG. 5 is a main part configuration diagram showing another embodiment of the Cr etching apparatus according to the present invention.

[Explanation of symbols] 2 ... Etching tank, 2A ... Wall part, 20 ... Entrance, 3
0 ... Etching material, 40A, 40B ... Fluid pouring nozzle.

─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. ⁶ Identification number Reference number within the agency FI Technical display location H01L 29/786 H01L 29/78 612D 21/336 (72) Inventor Akira Aoki 3300 Hayano, Mobara, Chiba Prefecture Address, Electronic Devices Division, Hitachi, Ltd. (72) Inventor, Toshiyuki Mima 3300 Hayano, Mobara, Chiba Address: Electronic Devices Division, Hitachi, Ltd.

Claims (5)

[Claims] 1. A Cr etching apparatus provided with an etching tank for spraying at least a Cr etching liquid, wherein the etching tank is provided with an inlet for guiding a conveyed member to be etched into the inside thereof. A Cr etching device, characterized in that at least a means for pouring a fluid is provided in a peripheral portion of the inlet opposite to the gravity direction. 2. The Cr etching apparatus according to claim 1, wherein the fluid is a Cr etching liquid. 3. A Cr etching apparatus provided with an etching tank in which at least a Cr etching liquid is sprayed in the direction of gravity, and the etching tank is provided with an inlet for guiding a member to be etched conveyed thereinto. A cover extending from a peripheral portion of the inner wall surface on the side opposite to the gravity direction of the inlet is provided, and a part of the Cr etching liquid to be sprayed is configured to drop along the cover. A Cr etching device characterized in that 4. An etching bath for spraying a Cr etching liquid and at least one water washing bath are arranged in parallel in the conveying direction of the member to be etched, and the Cr etching liquid and water from the respective etching baths and water washing baths are provided. In a Cr etching apparatus provided with a tank for respectively storing and circulating them through a filter to a Cr etching tank and a water washing tank, in order to cause the accumulated fluid to meander and move in the direction of gravity and in a direction opposite to that direction. A Cr etching device, characterized in that it is provided with a drawing wall. 5. The member to be etched is one of transparent substrates arranged to face each other with the liquid crystal of the liquid crystal display device interposed therebetween, and the surface of the Cr layer formed on the main surface of the transparent substrate. 5. The Cr etching apparatus according to claim 1, wherein a mask for selective etching is formed on the Cr etching device.