JPH097729A - Semiconductor arrester and combination type arrester - Google Patents

Abstract

PURPOSE: To provide the semiconductor arrester which can be easily combined with a gas tube type arrester. CONSTITUTION: Metallic plates 12 and 14 are oppositely laminated with a gap provided, and three sets of diode groups 56 through 60 and a thyristor T1 are connected in parallel in between the plates. Leads 20 through 24 are connected in between two diodes consisting of the respective diode groups 56 through 60, and these are sealed in a package 26 made of synthetic resin. The diode groups 56 through 60 and the thyristor T1 are disposed at the corner parts of the package 26, the end peripheral shape of each metallic plate 12 and 14 in between one diode group 60 and the thyristor T1 adjacent to the diode group 60, is formed into a recessed shape while being directed to the center direction. A recessed groove 28 extended in the laminating direction of the metallic plates 12 and 14 is formed in one end face of the package 26 to be turned out the end periphery side formed in the aforesaid recessed shape, the other end side of the lead 24 to be connected to the diode group 60 is formed into a plate shape projected into the recessed groove 28, and is provided with an penetrating hole 32.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor arrester, and more particularly to a semiconductor arrester for protecting communication equipment and the like from abnormally high voltage generated by direct lightning, induced lightning and the like, and more particularly a diode bridge thyristor type semiconductor. Regarding arrester. It also relates to a combination type arrester in which a semiconductor arrester and a gas tube type arrester (lightning arrester) are combined.

[0002]

2. Description of the Related Art The structure of a conventional diode bridge thyristor type semiconductor arrester 50 will be described with reference to FIGS. 8 to 12 together with the connection between the diode bridges (D1 to D6) constituting the semiconductor arrester 50 and the thyristor T1. To do. Reference numerals 52 and 54 denote a T-shaped first metal plate and a second metal plate which are arranged facing each other with a gap therebetween. Diode D1, diode D2, diode D3
And diode D4 and diode D5 and diode D6 are connected in series so that their polarities are in the same direction,
One diode group 56, 58, 60 is formed. These diode groups 56, 58, 60 are both metal plates 5.
Two and 54 are connected in parallel so that their polarities are in the same direction.

The thyristor T1 also has a diode group 5
Two metal plates 52, 54 in parallel with 6, 58, 60
Is connected in between. Reference numerals 62, 64, 66 are leads made of metal, and one end side of each is the diode group 56, 5
Two diodes (diode D1
And diode D2, diode D3 and diode D4,
The diodes D5 and D6) are respectively interposed and connected. Each diode group 56, 58, 60
Is arranged at the three ends of the T-shaped metal plates 52, 54, the leads 62, 64, 66 are also connected to the three ends. Reference numeral 68 denotes a package formed of a synthetic resin material, the outer shape of which is formed into a quadrangular prism shape, and the first metal plate 52, the second metal plate 54, the diodes D1 to D6, the thyristor T1 and one end of the leads 62 to 66. Seal the sides. The other ends of the leads 62 to 66 project outward from the package 68 from the end faces of the metal plate 52, 54 of the package 68 located in the edge direction (upper and lower edges in FIGS. 8 and 9). 66 is from the upper end surface,
The leads 62 and 64 project from the lower end surface. Therefore, the outline shape is as shown in FIG.

[0004]

The semiconductor arrester 50 described above has a fast response speed, but is weak against a large current, and thus has a slow response speed but is resistant to a large current. A gas tube type arrester as shown in FIGS. 13 and 14. The defect can be compensated by combining with 70. This is called a combination type arrester. Here, the structure of the gas tube type arrester 70 will be briefly described. Each line electrode 76 is arranged on both sides of the ground electrode 74 having the ground lead 72 extending from the side surface, and an insulating spacer is provided between these electrodes 74, 76. 78
It is formed by hermetically sealing with an inert gas. Further, reference numeral 80 is a contact piece which constitutes a part of the fail-safe mechanism, and the peripheral surface of the arrester 70 is so arranged as to extend between the electrodes 74 and 76 with the insulating sheet 82 which also constitutes a part of the fail-safe mechanism interposed. Is attached to.
This fail-safe mechanism prevents the arrester 70 from generating heat and igniting when the discharge continues for a long time. Therefore, this fail-safe mechanism is an essential component of the gas tube type arrester 70.

However, the gas tube type arrester 7
In the case of manufacturing a combination type arrester as shown in FIG.
Has the following issues. Gas tube type arrester 70
Considering that the combined structure with and makes the occupied area as small as possible and that the side surface of the arrester 70 is normally the bottom surface of the arrester 70 because the ground lead 72 extended to the side surface of the arrester 70 is grounded. Then, the gas tube type arrester 70 and the semiconductor arrester 50 are inevitably attached to the upper surface or the lower surface of the gas tube type arrester 70 (the upper surface and the lower surface in FIGS. 13 and 14). However, since the upper surface of the gas tube type arrester 70 usually has a fail-safe mechanism, it is difficult to mount it on the upper surface. Further, when it is attempted to be attached to the lower surface, since the ground lead 72 projects from the lower surface, it is necessary to bend the ground lead 72 to connect to the lead 66 while avoiding the package 68 of the semiconductor arrester 50. It has to be bent greatly along the outer wall surface of the package 68, which is troublesome to process and the ground lead 7
Stress is applied to the joint portion between 2 and the ground electrode 74, which increases the risk of damage. Also, the lead 66 and the ground lead 72
There is also a problem that it is difficult to install, such as connection with is difficult.

Therefore, the present invention has been made to solve the above problems, and an object of the present invention is to provide a semiconductor arrester which can be easily combined with a gas tube type arrester and a combination which can be easily manufactured by using the semiconductor arrester. To provide a type arrester.

[0007]

The present invention has the following constitution in order to achieve the above object. That is, the semiconductor arrester according to the present invention includes the first metal plate and the second metal plate, which are opposed to each other and are spaced apart from each other, and the two diodes connected in series so that the polarities thereof are in the same direction. And 3 connected in parallel between the two metal plates so that their polarities are in the same direction.
A group of diode groups, a thyristor connected between the two metal plates in parallel with the diode groups, three leads each having one end connected between the two diodes forming each of the diode groups, and In a semiconductor arrester comprising a first metal plate, the second metal plate, the diode group, the thyristor and a package made of synthetic resin for sealing one end side of the lead, the three diode groups and the thyristor are An edge shape of the metal plate disposed between corners of the package and between one diode group of the diode group and the thyristor adjacent to the one diode group is a center of the metal plate. Is formed in a concave shape toward the direction, and is located on the concave edge side of the metal plate. A concave groove extending in the stacking direction of the metal plates is formed on one end surface of the package, and the other end side of the lead connected to the one diode group is formed in a plate shape protruding into the concave groove. In addition, a through hole is provided. By adopting this configuration, the grounding lead of the gas tube type arrester can be inserted into the through hole and placed in the concave groove, so it can be easily combined with the gas tube type arrester and the combination type Easy to manufacture. Further, by forming an extending portion extending toward the center of the through hole on the inner peripheral surface of the through hole, the extending portion is surely formed with the peripheral surface of the ground lead of the gas tube type arrester. The contact can be made, and the ground lead will not easily come off from the through hole. Further, specifically, the metal plate may be formed in a substantially U shape or a substantially H shape.

In the combination type arrester according to the present invention, the line electrodes are arranged on both sides of the ground electrode having the ground lead extended from the side surface, and the electrodes are hermetically sealed by the insulating spacer. A gas tube type arrester filled with active gas, and a semiconductor arrester according to the present invention, wherein the gas tube type arrester is a semiconductor arrester in which the ground lead is inserted into a through hole provided in the semiconductor arrester. It is characterized in that they are integrally combined and electrically connected.

[0009]

[Operation] The operation will be described. Since the three diode groups and the thyristor are respectively arranged at the corners in the package, the edge shape of the metal plate between one diode group of the diode group and the adjacent thyristor is formed. Can be formed in a concave shape toward the center of the metal plate. Therefore, a concave groove extending in the stacking direction of the metal plates can be formed on one end surface of the package located on the edge side in conformity with the edge shape of the concave metal plate. If the other end side of the lead connected to one diode group is formed in a plate shape and protruded in this groove and a through hole is provided, the other end side of the lead can be arranged near the central portion of the package. Therefore, the grounding lead of the gas tube type arrester can be easily inserted into the through hole and arranged in the concave groove, and the combination with the gas tube type arrester can be easily performed.

[0010]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Preferred embodiments of a semiconductor arrester and a combination type arrester according to the present invention will be described in detail below with reference to the accompanying drawings. First, the configuration of an embodiment of the semiconductor arrester 10 will be described with reference to FIGS.
The connection between the diode bridges (D1 to D6) forming the semiconductor arrester 10 and the thyristor T1 is the same as in the conventional example, and the description thereof is omitted (however, in this embodiment, the first metal plate is 12). , The second metal plate is 14). The first metal plate 12 and the second metal plate 14 are each formed in a substantially U shape as shown in FIG. 1 as an example, and the two end portions and the two bent portions have diode groups 56 to 60 and a thyristor T1. Contacts 16a, 16b, 16c, 16d (first metal plate 12), 18a, 18b, 18c, 18d (second
It is a metal plate 14). Specifically, the contacts 16a and 16d and the contacts 18a and 18d are provided at the two ends, and the contacts 16b and 16c and the contact 1 are provided at the two bent portions.
There are 8b and 18c. Further, the first metal plate 12 and the second metal plate 14 are arranged so as to face each other in the front-rear direction of FIG. The shape of the metal plates 12 and 14 is such that one of the diode groups (in this embodiment, the diode group 60 as an example) of the diode group and the metal plate 12 between the one diode group and the adjacent thyristor T1. 14 edge shape,
Since it may be formed in a concave shape toward the center of the metal plate, for example, a substantially H shape may be used instead of the substantially U shape, and the contacts may be arranged at the four ends.

Between the contacts of the first metal plate 12 and the second metal plate 14 (between 16a and 18a, ..., 16)
The three diode groups 56, 58 and 60 (each having the same polarity) and the thyristor T1 described in the conventional example are attached by solder bonding between d to 18d). As a result, each of the three diode groups 56, 58, 6
0 and the thyristor T1 are connected in parallel between the two metal plates 12 and 14. Specifically, the contacts 16a and 18a
The thyristor T1, the contact points 16b and 18b, the contact points 16c and 18c, and the contact points 16d and 18d are provided with diode groups 56, 58, and 60, respectively. May be rearranged. 20, 22, 24 are three leads,
As shown in FIG. 5, one end of each lead 20, 22, 24 is interposed between the two diodes (D1 and D2, D3 and D4, D5 and D6) that form each diode group 56, 58 and 60, respectively. It is connected. Reference numeral 26 denotes a package, which is made of a synthetic resin material and seals the two metal plates 12 and 14, the diode groups 56, 58 and 60, the thyristor T1 and one ends of the leads 20 to 24.
Note that the package 26 is formed into a substantially quadrangular prism like a general semiconductor device package.

More specifically, the contact points 16a to 16d and 18a to 18 of the two metal plates 12 and 14 will be described.
d is arranged at the four corners of the package 26, so that the three diode groups 56 to 60 and the thyristor T1 are also arranged at the corners inside the package 26. In addition, the metal plate is provided at a substantially central portion of one end surface (for example, the upper end surface of FIGS. 1, 2, and 3 and the front surface of FIG. 4) of the package 26 located on the side of the concave edge of the metal plates 12 and 14. A concave groove 2 extending in the stacking direction of 12 and 14
8 are formed. Each contact 16a-16d, 18a-
Since 18d is arranged at the four corners of the package 26 and the edges of the metal plates 12 and 14 are formed to be concave toward the central portion of the package 26, the concave groove 28 can also be formed deep. This groove 28 is the package 2
The metal plate 6 is formed so as to extend between the opposing surfaces substantially parallel to the metal plate surface. Specifically, the facing surfaces in this embodiment are front and rear surfaces in FIGS. 1 to 3, and upper and lower surfaces in FIG. In addition, in the center portion of the other end surface (for example, the center portion of the lower end surface of FIGS. 1, 2 and 3) facing the one end surface of the package 26, between the two leads 20 and 22 protruding from the other end surface as described later. In order to increase the edge surface discharge start voltage, a V-shaped groove 30 is formed as an example to increase the edge surface distance. The V-shaped groove 30 is also the metal plate 12,
Since the respective 14 contacts 16a to 16d and 18a to 18d are arranged at the four corners of the package 26, they are easy to form,
Further, it becomes possible to form deeply and secure a sufficient edge distance. In particular, if the metal plates 12 and 14 are substantially H-shaped, both the concave groove 28 and the V-shaped groove 30 can be deeply formed. The other end of the lead 24 connected to the one diode group 60 is formed in a plate shape protruding into the groove 28, and a through hole 32 is provided in a portion exposed in the groove 28. The other ends of the other leads 20 and 22 project from the other end surface (the lower end surface of FIGS. 2 and 3) in which the above-mentioned V-shaped groove 30 is formed, sandwiching the V-shaped groove 30, and bent at a right angle. There is.

An extending portion 34 extending toward the center of the through hole 32 is formed on the inner peripheral surface of the through hole 32, and the distance between the tips of the extending portions 34 is set to a gas tube described later. It is formed to be smaller than the outer diameter of the ground lead 72 of the mold arrester 70. Therefore, the ground lead 72 has the through hole 32.
When it is inserted into the inside, the extension portion 34 holds the ground lead 72 so that the ground lead 72 is hard to come off from the through hole 32. Further, the diode groups 56, 58, 60 and the thyristor T arranged between the metal plates 12, 14 are arranged.
1 metal plates 12, 14 and leads 20-24
The connection structure of the thyristor T1 and the diode group 56 is shown in FIG. 5 as an example.
Solder joining is performed between the metal plates 12 and 14 and the thyristor T1, between the metal plates 12 and 14 and the diodes D1 and D2 forming the diode group 56, and between the diodes D1 and D2 and the lead 20.

Next, the structure of the combination type arrester 36 in which the semiconductor arrester 10 and the gas tube type arrester 70 described above are combined will be described with reference to FIGS. 6 and 7. The structure of the gas tube type arrester 70 is the same as the structure described in the conventional example. First, the electrical connection between the leads 20 to 24 of the semiconductor arrester 10 and the ground lead 72 and the two line electrodes 76 of the gas tube type arrester 70 is performed by connecting the ground lead 72 and the lead 24 to the two line electrodes 76 and the lead 20. 22 is connected to each other. As described in the conventional example, in consideration of the area occupied by the components of the combination type arrester 36, the assembly structure of the semiconductor arrester 10 and the gas tube type arrester 70 can be paraphrased by replacing the semiconductor arrester 10 with the upper surface or the lower surface of the gas tube type arrester 70. For example, since the gas tube type arrester 70 needs to be attached so as to be in contact with the upper surface or the lower surface of the semiconductor arrester 10, it is upside down from FIG. 4, but as shown in FIG. 6 and FIG. Of the gas tube type arrester from the extending direction (upward direction of FIG. 6 and FIG. 7) of the leads 20 and 22 extending from the other end surface (the surface on which the V-shaped groove 30 is formed) and bent at right angles in the same direction. 70 is attached to the upper surface of the semiconductor arrester 10 while inserting the ground lead 72 into the through hole 32. The ground lead 72 may be soldered after being inserted into the extending portion 34 of the through hole 32.

After that, the leads 20 and 22 bent above the semiconductor arrester 10 and the gas tube type arrester 7 are formed.
The two line electrodes 76 of 0 are electrically connected by soldering or the like to complete the combination type arrester 36. Further, as in the present embodiment, the leads 20 and 22 projecting from the other end surface of the semiconductor arrester 10 are formed in advance so as to be aligned with the gap between the two line electrodes 76 of the gas tube type arrester 70. Easy to join. Further, on the contact surface (the lower surface in FIG. 5 and the upper surface in FIG. 7) of the semiconductor arrester 10 with the outer peripheral surface of the gas tube type arrester 70, a groove having a shape corresponding to the outer peripheral surface shape of the gas tube type arrester 70 (one example By forming the U-shaped groove), the stability at the time of assembly is increased. In addition, this groove 3
If the gas tube type arrester 70 is a polygonal column, the sectional shape of 8 may be a rectangular groove corresponding to it.

Furthermore, a gas tube type arrester 70
The lead 24 of the semiconductor arrester 10 connected to the ground lead 72 of FIG. 2 is arranged in the groove 28 and is located near the center of the package 26. Therefore, as shown in FIG. Lead 2 at least compared to
4 and can be connected to the ground lead 72 and the ground electrode 7
No large stress is applied to the connection portion with 4, and the possibility of failure is reduced. Further, as described above, the semiconductor arrester 10 includes the ground lead 72 of the gas tube type arrester 70.
Since it can be attached to the outer peripheral surface on the side, the fail-safe mechanism of the gas tube type arrester 70 attached to the outer peripheral surface located on the side opposite to the ground lead 72 does not interfere with the combination with the semiconductor arrester 10.

Although various preferred embodiments of the present invention have been described above, the present invention is not limited to the above-described embodiments, and many modifications can be made without departing from the spirit of the invention. Of course.

[0018]

When the semiconductor arrester according to the present invention is used, since the three diode groups and the thyristor are respectively arranged at the corners in the package, one diode group of the diode group and the one diode group are arranged. The edge shape of the metal plate between the group and the adjacent thyristor can be formed in a concave shape toward the center of the metal plate,
Further, a concave groove extending in the stacking direction of the metal plates can be formed on one end surface of the package located on the edge side in conformity with the edge shape of the concave metal plate. As a result, the other end of the lead connected to one diode group is formed into a plate-like shape in the groove so that the lead is provided and a through hole is provided, and the other end of the lead is placed near the center of the package. it can. Therefore, the ground lead of the gas tube type arrester can be easily inserted into the through hole and placed in the concave groove, and the combination with the gas tube type arrester can be easily performed, so that the combination type arrester can be easily manufactured. You can do it. Also,
By forming an extension on the inner peripheral surface of the through hole that extends toward the center of the through hole, the extension can be reliably brought into contact with the peripheral surface of the ground lead of the gas tube type arrester. , It becomes difficult for the ground lead to come off from the through hole. Further, the combination type arrester using the semiconductor arrester according to the present invention can be easily combined with the semiconductor arrester and the gas tube type arrester, the workability is improved, and the degree of bending of the ground lead is higher than that of the conventional example. Since less is required, the stress applied between the ground lead and the ground electrode is also reduced,
It has the remarkable effect of improving product quality.

[Brief description of drawings]

FIG. 1 shows the shape of a metal plate, the arrangement of contacts, and the shape of a groove in a package of a semiconductor arrester according to the present invention.
Explanatory diagram showing arrangement

FIG. 2 is an explanatory diagram showing the shape and arrangement of leads in a package of a semiconductor arrester according to the present invention.

FIG. 3 is an explanatory view showing the arrangement of the metal plate and the lead shown in FIGS. 1 and 2;

FIG. 4 is a front view of a semiconductor arrester according to the present invention.

5 is a cross-sectional view taken along the line AA of FIG. 3 for showing a bonding state of a metal plate, a diode group, and a thyristor.

FIG. 6 is a front view showing the configuration of a combination type arrester using a semiconductor arrester according to the present invention.

7 is a sectional view taken along line BB of FIG.

FIG. 8 is a plan view showing the shape of a metal plate, the arrangement of contacts, and the shape and arrangement of leads in a conventional semiconductor arrester package.

9 is a side view of FIG.

FIG. 10 is a front view of FIG.

FIG. 11 is a circuit diagram of a diode bridge thyristor type semiconductor arrester.

FIG. 12 is a perspective view showing the outer shape of the semiconductor arrester of FIG.

FIG. 13 is a front view showing the configuration of a general gas tube type arrester.

14 is a side view of FIG.

FIG. 15 is a side view showing an assembly structure of a combination type arrester using the conventional semiconductor arrester and the gas tube type arrester of FIG.

[Explanation of symbols]

 10 Semiconductor Arrestor 12 First Metal Plate 14 Second Metal Plate 20, 22, 24 Lead 26 Package 28 Recessed Groove 32 Through Hole 56, 58, 60 Diode Group T1 Thyristor

Claims (4)

[Claims] 1. A first metal plate and a second metal plate, which are opposed to each other and are spaced apart from each other and are stacked, and two diodes connected in series so that their polarities are in the same direction. Of three sets of diode groups connected in parallel between the two metal plates such that the polarities of the two are in the same direction, a thyristor connected between the two metal plates in parallel with the diode group, and one end side thereof is Three leads respectively connected between two diodes forming each diode group, one end side of the first metal plate, the second metal plate, the diode group, the thyristor and the lead are sealed. A semiconductor arrester comprising a package made of synthetic resin, wherein the three diode groups and the thyristor are the package. The edge shape of the metal plate between one diode group of the diode group and the thyristor adjacent to the one diode group, which are respectively disposed in the corners of the A concave groove extending in the stacking direction of the metal plate is formed on one end surface of the package, which is formed in a concave shape and is located on the edge side of the concave shape of the metal plate, and is connected to the one diode group. A semiconductor arrester characterized in that the other end side of the lead is formed in a plate shape protruding into the concave groove, and a through hole is provided. 2. The semiconductor arrester according to claim 1, wherein an extending portion extending toward the center of the through hole is formed on the inner peripheral surface of the through hole. 3. The metal plate is substantially U-shaped or substantially H-shaped.
The semiconductor arrester according to claim 1, wherein the semiconductor arrester is formed in a letter shape. 4. A gas tube type arrester in which line electrodes are arranged on both sides of a ground electrode having a ground lead extending from a side surface thereof, and an insulating gas is hermetically sealed between these electrodes to seal an inert gas. And the semiconductor arrester according to claim 1, 2 or 3, wherein the gas tube type arrester is integrally combined with the semiconductor arrester by inserting the ground lead into a through hole provided in the semiconductor arrester. A combination type arrester characterized by being connected electrically.