JPH0966334A - Manufacture of heat sink for semiconductor package - Google Patents

Manufacture of heat sink for semiconductor package

Info

Publication number
JPH0966334A
JPH0966334A JP22687695A JP22687695A JPH0966334A JP H0966334 A JPH0966334 A JP H0966334A JP 22687695 A JP22687695 A JP 22687695A JP 22687695 A JP22687695 A JP 22687695A JP H0966334 A JPH0966334 A JP H0966334A
Authority
JP
Japan
Prior art keywords
plate portion
thick plate
rolled
semiconductor package
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP22687695A
Other languages
Japanese (ja)
Inventor
Makoto Oba
誠 大場
Noboru Hagiwara
登 萩原
Manabu Kagawa
学 香川
Yoshiki Shinohara
芳樹 篠原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Cable Ltd
Original Assignee
Hitachi Cable Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Cable Ltd filed Critical Hitachi Cable Ltd
Priority to JP22687695A priority Critical patent/JPH0966334A/en
Publication of JPH0966334A publication Critical patent/JPH0966334A/en
Pending legal-status Critical Current

Links

Abstract

PROBLEM TO BE SOLVED: To impart excellent productivity without causing increase in cost by intermittently forming a projecting thick plate and punching it out by press working. SOLUTION: A planar base material 4 is inserted between a die roll 2, on the outer circumferential surface of which a recessed part 1B is arranged corresponding to a thick plate part 5 at prescribed spaces apart, and a flat roll 3 with a plain outer circumferential surface. The base material 4 is rolled by the rotation (a) (b) of the rolls 2, 3, so that the thick plate parts 5 are formed. Press working is performed on the roll forming material on which the thick plate part 5 is uncontinuously formed by rolling, making a prescribed size with the material. Then, punching is performed with a thin plate part 6 left around the thick plate part 5. The planar base material is composed of copper, copper alloy or aluminum, for example. Consequently, no cost increase is caused for the equipment and the manufacture.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【発明の属する技術分野】本発明は半導体パッケージ用
放熱板の製造方法に関し、ロール圧延されることにより
連続的に凸状の厚板部が成形された圧延成形材の必要部
分を打抜き加工で打ち抜くことによって生産性を向上さ
せた半導体パッケージ用放熱板の製造方法に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a heat sink for a semiconductor package, and punches a necessary portion of a roll-formed material in which a convex thick plate portion is continuously formed by rolling. Thus, the present invention relates to a method for manufacturing a semiconductor package heat dissipation plate with improved productivity.

【0002】[0002]

【従来技術】近年、集積回路(IC)や、大規模集積回
路(LSI)の高集積化、高速化、及び高出力化が進む
に従い、半導体チップの発熱が問題となっており、発熱
性を考慮した種々の半導体パッケージ構造が提案されて
いる。
2. Description of the Related Art In recent years, as integrated circuits (ICs) and large-scale integrated circuits (LSIs) have become highly integrated, high-speed, and high-powered, heat generation of semiconductor chips has become a problem, and heat generation is a problem. Various semiconductor package structures that have been considered have been proposed.

【0003】図5は、従来の半導体パッケージの断面図
を示し、半導体チップ15を固定する放熱板1と、放熱
板1に接着固定され、ボンディングワイヤ16によって
半導体チップ15と電気的に接続されたリード17とを
有し、放熱板1、半導体チップ15、ボンディングワイ
ヤ16、及びリード17をモールド樹脂18によって一
体的に成形して構成されている。
FIG. 5 is a cross-sectional view of a conventional semiconductor package, in which a heat sink 1 for fixing a semiconductor chip 15 and an adhesive plate fixed to the heat sink 1 are electrically connected to the semiconductor chip 15 by a bonding wire 16. The heat dissipation plate 1, the semiconductor chip 15, the bonding wires 16, and the leads 17 are integrally molded with the molding resin 18 and are configured to have the leads 17.

【0004】この中で、半導体チップ15の放熱を促す
放熱板1には熱伝導性に優れる銅、銅合金、或いはアル
ミニウム等が使用され、また、モールド樹脂との密着性
を考慮して表面にめっきを施して使用されることが多
い。
Among them, copper, copper alloy, aluminum or the like having excellent heat conductivity is used for the heat dissipation plate 1 for promoting heat dissipation of the semiconductor chip 15, and the surface of the heat dissipation plate 1 is taken into consideration in consideration of adhesion with the molding resin. Often plated and used.

【0005】図5(a) は、半導体チップ15及びリード
17の下部に放熱板1を有するパッケージ構造で、2W
程度までの半導体チップの発熱に対応可能である。(b)
はモールド樹脂18の表面に凸状断面を有する放熱板1
の放熱面22を露出させたパッケージ構造で、(a) のパ
ッケージ構造に比べて発熱の許容量が大きく、5W程度
までの半導体チップの発熱に対応可能である。
FIG. 5 (a) shows a package structure having a heat sink 1 under the semiconductor chip 15 and leads 17 and having a 2 W structure.
It is possible to cope with the heat generation of the semiconductor chip to some extent. (b)
Is a heat sink 1 having a convex cross section on the surface of the molding resin 18.
The package structure in which the heat dissipation surface 22 is exposed has a larger allowable amount of heat generation than the package structure of (a), and can cope with the heat generation of the semiconductor chip up to about 5 W.

【0006】図5(c) は(b) の構造の放熱板1の放熱面
22に放熱フィン19を固定したパッケージ構造で、こ
のように放熱フィンを取り付けることによりパッケージ
の放熱性がより高められ、10W以上の半導体チップの
発熱に対応することができる。
FIG. 5C shows a package structure in which the heat radiation fins 19 are fixed to the heat radiation surface 22 of the heat radiation plate 1 of the structure shown in FIG. 5B. By mounting the heat radiation fins in this way, the heat radiation performance of the package is further enhanced. It is possible to cope with the heat generation of the semiconductor chip of 10 W or more.

【0007】図6は、図5(b) 、(c) においてパッケー
ジされる凸状断面を有する放熱板1の斜視図を示し、放
熱面を有する厚板部20と、厚板部20より小なる厚み
を有する薄板部21を厚板部20の周囲に連続的に設け
た形状を有する。
FIG. 6 is a perspective view of the heat radiating plate 1 having the convex cross section packaged in FIGS. 5 (b) and 5 (c). The thin plate portion 21 having a uniform thickness is continuously provided around the thick plate portion 20.

【0008】上記した図6に示す放熱板1の製造方法に
は、切削加工により個々に製作する方法の他に、周面に
沿って複数の凹部を有する圧延ロールによって板状部材
を圧延する特開平5−115938号に開示される方法
が本出願人によって提案されている。
In the method of manufacturing the heat dissipation plate 1 shown in FIG. 6 described above, in addition to the method of individually manufacturing by the cutting process, the plate member is rolled by a rolling roll having a plurality of recesses along the peripheral surface. The method disclosed in Kaihei 5-115938 has been proposed by the applicant.

【0009】[0009]

【発明が解決しようとする課題】しかし、従来の半導体
パッケージ用放熱板の製造方法によると、厚板部の周囲
に薄板部を圧延によって形成するのに大きな加工荷重を
要し、大型のプレス装置が必要となる。一般に加工荷重
の大きいプレス装置は加工速度が低いため、放熱板を連
続的に高速で製造することが困難である。従って、本発
明の目的は、設備及び製造に要するコスト増を招かずに
生産性に優れる半導体パッケージ用放熱板の製造方法を
提供することにある。
However, according to the conventional method for manufacturing a heat sink for a semiconductor package, a large processing load is required to form a thin plate portion around a thick plate portion by rolling, and a large press machine is used. Is required. Generally, since a press machine with a large processing load has a low processing speed, it is difficult to continuously manufacture the heat sink at a high speed. Therefore, an object of the present invention is to provide a method for manufacturing a heat sink for a semiconductor package, which is excellent in productivity without increasing the cost required for equipment and manufacturing.

【0010】[0010]

【課題を解決するための手段】本発明は設備及び製造に
要するコスト増を招かずに優れた生産性を付与するた
め、厚板部の寸法に応じた凹部を所定の間隔で外周面に
配置した第1の圧延ロールと、平坦な外周面を有する第
2の圧延ロールとの間に平板素材を挟持し、第1の圧延
ロールと第2の圧延ロールを回転させて平板素材を圧延
することにより一方の面に凹部に基づく凸状の厚板部を
断続的に有する圧延成形材を形成し、圧延によって厚板
部が断続的に形成された圧延成形材にプレス加工を施す
ことにより所定の寸法にした後、厚板部の周囲に薄板部
を残して打ち抜く打ち抜き加工を施すようにした半導体
パッケージ用放熱板の製造方法を提供する。
According to the present invention, in order to provide excellent productivity without increasing the cost required for equipment and manufacturing, concave portions corresponding to the dimensions of the thick plate portion are arranged on the outer peripheral surface at predetermined intervals. The flat plate material is sandwiched between the first rolling roll and the second rolling roll having a flat outer peripheral surface, and the flat plate material is rolled by rotating the first rolling roll and the second rolling roll. To form a rolled formed material having intermittently a convex thick plate portion based on a concave portion on one surface, and by pressing the rolled formed material in which the thick plate portion is intermittently formed by rolling a predetermined Provided is a method for manufacturing a heat sink for a semiconductor package, which is configured such that after the size is set, a punching process is performed in which a thin plate portion is left around a thick plate portion.

【0011】[0011]

【発明の実施の形態】以下、本発明の半導体パッケージ
用放熱板の製造方法を、図面を参照しつつ詳細に説明す
る。
BEST MODE FOR CARRYING OUT THE INVENTION A method for manufacturing a heat sink for a semiconductor package of the present invention will be described in detail below with reference to the drawings.

【0012】図1は、本発明における半導体パッケージ
用放熱板の製造装置の一形態例を示し、外周面に厚板部
の寸法に準じた凹部1Bが所定の間隔で配置された型ロ
ール2と、平坦な外周面を有する平ロール3の間に矢印
A方向から挿入される銅、銅合金、或いはアルミニウム
等で構成される平板素材4は、ロール2,3の回転a,
bによって圧延され、型ロール2に接する表面に凹部1
Bによって厚板部5が形成される。
FIG. 1 shows an example of a manufacturing apparatus of a heat sink for a semiconductor package according to the present invention, in which a die roll 2 having recesses 1B arranged at predetermined intervals on the outer peripheral surface according to the dimensions of the thick plate portion is provided. , A flat plate material 4 made of copper, a copper alloy, aluminum, or the like, which is inserted between the flat rolls 3 having flat outer peripheral surfaces in the direction of the arrow A, rotates the rolls 2, 3 a,
the surface of the die roll 2 contacting the die roll 2
The thick plate portion 5 is formed by B.

【0013】一方、凹部1の間に設けられた平坦部1A
は、圧延によって厚板部5との間に連続した薄板部6を
形成する。このロール2,3による圧延によって厚板部
5が形成される位置には平板素材4の塑性変形によって
幅方向に拡張部7が形成され、拡張部7を伴って凸状に
形成された厚板部5と薄板部6とが連続的に設けられた
圧延成形材8が形成される。
On the other hand, a flat portion 1A provided between the recesses 1
Forms a continuous thin plate portion 6 with the thick plate portion 5 by rolling. An expanded portion 7 is formed in the width direction by the plastic deformation of the flat plate material 4 at a position where the thick plate portion 5 is formed by rolling by the rolls 2 and 3, and the thick plate formed in a convex shape with the expanded portion 7 is formed. A rolled formed material 8 in which the portion 5 and the thin plate portion 6 are continuously provided is formed.

【0014】モールド樹脂との密着性を高めるために放
熱板1の表面をめっき加工する場合には、上記した圧延
成形材8にめっき処理を施しても良い。この場合、連続
した厚板部5及び薄板部6にめっき処理が可能であるこ
とからめっきに要する手間とコストが低減される。
When the surface of the heat sink 1 is plated in order to improve the adhesion with the mold resin, the above-mentioned rolled molded material 8 may be plated. In this case, since the continuous thick plate portion 5 and the thin plate portion 6 can be plated, the labor and cost required for plating can be reduced.

【0015】図2は、圧延成形材8から放熱板1を打ち
抜く打抜き工程において、圧延成形材8の長さ方向にお
ける断面図を示し、下金型9に載置された圧延成形材8
を厚板部5の形状に準じた凹部10を有する上金型11
で上方から下方に向かって打ち抜くことにより拡張部7
が所定の寸法で切断される。このとき、厚板部5は凹部
10によって保持されることにより、打ち抜かれる放熱
板1の放熱面及び裏面の変形が防止される。
FIG. 2 shows a cross-sectional view in the length direction of the rolled formed material 8 in the punching process of punching the heat dissipation plate 1 from the rolled formed material 8, and the rolled formed material 8 placed on the lower die 9 is shown.
An upper die 11 having a recess 10 conforming to the shape of the thick plate portion 5
By punching from the top to the bottom with
Is cut into a predetermined size. At this time, since the thick plate portion 5 is held by the concave portion 10, deformation of the heat radiating surface and the back surface of the heat radiating plate 1 that is punched out is prevented.

【0016】また、図1における圧延成形材8の製造工
程において、圧延条件により、薄板部6の圧延工程から
厚板部5及び拡張部7の圧延工程にかけて板厚方向に若
干の曲がりや、厚板部5の裏面に凹みが生じることがあ
る。図3は、拡張部7及び厚板部5を同時にプレスする
整形金型12を示し、平板13に載置された圧延成形材
8を整形金型12で比較的小さな加工荷重でプレスする
ことによって上記した曲がりや、凹みを整形し、この後
打ち抜くことにより厚板部5及び薄板部6の加工精度を
高めることができる。また、変形を生じやすい部分に限
ってプレスによる整形を施しても差し支えない。
Further, in the manufacturing process of the rolled formed material 8 in FIG. 1, depending on the rolling conditions, there is a slight bending or thickness in the plate thickness direction from the rolling process of the thin plate portion 6 to the rolling process of the thick plate portion 5 and the expanded portion 7. A recess may be formed on the back surface of the plate portion 5. FIG. 3 shows a shaping die 12 that simultaneously presses the expanded portion 7 and the thick plate portion 5. By pressing the rolled formed material 8 placed on the flat plate 13 with the shaping die 12 with a relatively small processing load. By shaping the above-mentioned bends and dents and then punching, it is possible to improve the processing accuracy of the thick plate portion 5 and the thin plate portion 6. Further, it is also possible to perform shaping by pressing only on a portion that is likely to be deformed.

【0017】更に、前述した圧延成形材8の曲がり、凹
みを整形する整形工程を経たのち、放熱板1を打ち抜く
工程を同一のプレス装置で行っても良い。
Further, after the shaping step of shaping the bending and dent of the rolled formed material 8 described above, the step of punching out the heat dissipation plate 1 may be performed by the same press device.

【0018】以下に、上記した半導体パッケージ用放熱
板の製造方法を、具体的な数値を列挙しつつ説明する。
The method for manufacturing the above-mentioned heat sink for a semiconductor package will be described below by listing specific numerical values.

【0019】まず、図1に示す型ロール2及び平ロール
3によって、板厚1.63mm、幅28mmの無酸素銅焼鈍
材を圧延し、薄板部の板厚が0.8mmで厚板部の板厚が
1.6mm、寸法が20×20mmである圧延成形材8を製
造した。圧延成形材8の全幅は薄板部6において28.
3mm、拡張部7において32mmを有する。型ロール2の
凹部1Bは20×20mm、深さ0.8mmで、平坦部1A
の間隔25mmで隔てられており、凹部1Bの側面には若
干のテーパーが付けられている。
First, an oxygen-free copper annealed material having a plate thickness of 1.63 mm and a width of 28 mm is rolled by the die roll 2 and the flat roll 3 shown in FIG. A rolled formed material 8 having a plate thickness of 1.6 mm and dimensions of 20 × 20 mm was manufactured. The total width of the rolled formed material 8 is 28.
3 mm, 32 mm at the extension 7. The concave portion 1B of the mold roll 2 is 20 × 20 mm, the depth is 0.8 mm, and the flat portion 1A
Are separated by 25 mm, and the side surface of the concave portion 1B is slightly tapered.

【0020】この圧延成形材8を2分し、一方の表面に
厚さ2μmのNiめっきを連続めっき装置によって施し
た。もう一方の圧延成形材8はそのままである。
This rolled material 8 was divided into two parts, and one surface was plated with Ni having a thickness of 2 μm by a continuous plating device. The other rolled material 8 remains unchanged.

【0021】次に、図2に示す下金型9に上記した圧延
成形材8を載置し、上方より下方に向かって上金型11
により打抜き加工を施し、厚板部5の周囲に2mmの薄板
部を残すように拡張部7を打ち抜いた。
Next, the above-mentioned rolled forming material 8 is placed on the lower mold 9 shown in FIG. 2, and the upper mold 11 is moved downward from above.
Then, the expansion portion 7 was punched so that a thin plate portion of 2 mm was left around the thick plate portion 5.

【0022】この打ち抜き加工によって薄板部6の板厚
0.8mm、厚板部5の板厚1.6mm、寸法20×20mm
で全幅24mmの放熱板1を製造した。プレスによる打ち
抜き後では圧延成形材8で残存していた若干の板厚方向
の反りが略解消された。
By this punching process, the thin plate portion 6 has a plate thickness of 0.8 mm, the thick plate portion 5 has a plate thickness of 1.6 mm, and a dimension of 20 × 20 mm.
A heat sink 1 having a total width of 24 mm was manufactured by. After punching by the press, the slight warpage in the sheet thickness direction that had remained in the rolled formed material 8 was substantially eliminated.

【0023】凹部1Bが10.2×10.2mm、深さ
0.8mmで形成され、間隔25mmの平坦部1Aで隔てら
れた型ロール2及び平ロール3によって板厚1.5mm、
全幅28mmの無酸素銅焼鈍材を薄板部6の板厚が0.7
4mmとなるように圧延した。得られた圧延成形材8の全
幅は薄板部6において28mm、拡張部7において31mm
を有する。厚板部5では周囲の部分に若干の増肉が見ら
れ、中央が若干凹んだ状態であったが平均板厚は1.5
1mmであった。また、薄板部6ではエッジの部分に僅か
ではあるが波状の変形が生じていた。
A concave portion 1B is formed with a depth of 10.2 × 10.2 mm and a depth of 0.8 mm, and a plate thickness of 1.5 mm is formed by a die roll 2 and a flat roll 3 which are separated by a flat portion 1A having an interval of 25 mm.
Oxygen-free copper annealed material with a total width of 28 mm has a thickness of the thin plate portion 6 of 0.7.
Rolled to 4 mm. The total width of the obtained rolled formed material 8 is 28 mm in the thin plate portion 6 and 31 mm in the expanded portion 7.
Having. In the thick plate portion 5, a slight increase in thickness was observed in the peripheral portion and the center was slightly depressed, but the average plate thickness was 1.5.
It was 1 mm. Further, in the thin plate portion 6, a slight wavy deformation occurred at the edge portion.

【0024】この圧延成形材8を図3に示す平板13に
載置し、厚板部5に準ずる開口部の寸法が10×10m
m、深さが0.7mmで略直角の孔型を有する上金型12
によってプレスして整形加工を施すことにより、薄板部
6の板厚0.7mm、厚板部5の板厚1.4mmとなるよう
に整形した。なお、薄板部6の加工範囲は厚板部5の周
囲8mm幅とした。
This rolled material 8 is placed on the flat plate 13 shown in FIG. 3, and the size of the opening corresponding to the thick plate portion 5 is 10 × 10 m.
Upper mold 12 with m and depth of 0.7 mm and a substantially right-angled hole
Then, the thin plate portion 6 was shaped so that the thin plate portion 6 had a plate thickness of 0.7 mm and the thick plate portion 5 had a plate thickness of 1.4 mm. In addition, the processing range of the thin plate portion 6 was 8 mm width around the thick plate portion 5.

【0025】この整形加工によって圧延成形材8におけ
る薄板部6のエッジに生じていた変形が無くなり、厚板
部5の中央の凹みも解消された。
By this shaping process, the deformation generated at the edge of the thin plate portion 6 in the rolled formed material 8 is eliminated, and the dent at the center of the thick plate portion 5 is also eliminated.

【0026】次に、整形加工を施された圧延成形材8
を、図2に示す下金型9に載置し、上方より下方に向か
って上金型11により打抜き加工を施し、厚板部5の周
囲に7mmの薄板部を残すように拡張部7を打ち抜いた。
Next, the rolled formed material 8 which has been subjected to shaping processing
2 is placed on the lower die 9 shown in FIG. 2 and punched by the upper die 11 from the upper side to the lower side, and the expansion portion 7 is left so as to leave a thin plate portion of 7 mm around the thick plate portion 5. Punched out.

【0027】この打ち抜き加工によって薄板部6の板厚
0.7mm、厚板部5の板厚1.4mm、寸法10×10mm
で全幅24mmの放熱板1を製造した。
By this punching process, the thin plate portion 6 has a plate thickness of 0.7 mm, the thick plate portion 5 has a plate thickness of 1.4 mm, and a dimension of 10 × 10 mm.
A heat sink 1 having a total width of 24 mm was manufactured by.

【0028】図4は、下金型9及び上金型11による圧
延成形材8の打抜き加工時に未切断部14を設け、それ
以外の部分を切断した状態を示す。このように圧延成形
材8を打ち抜くことによって放熱板1がバラバラになる
ことが無く、後工程におけるハンドリング性が向上す
る。また、放熱板1の表面にめっきを施すにあたって作
業が容易になるとともにめっきの付着面積が拡大され
る。
FIG. 4 shows a state in which the uncut portion 14 is provided during punching of the rolled material 8 by the lower die 9 and the upper die 11 and the other portions are cut. By punching out the roll-formed material 8 in this way, the heat dissipation plate 1 does not come apart, and the handling property in the subsequent process is improved. In addition, when the surface of the heat sink 1 is plated, the work is facilitated and the area where the plating is attached is expanded.

【0029】[0029]

【発明の効果】以上説明した通り、本発明の半導体パッ
ケージ用放熱板の製造方法によると、厚板部の寸法に応
じた凹部を所定の間隔で外周面に配置した第1の圧延ロ
ールと、平坦な外周面を有する第2の圧延ロールとの間
に平板素材を挟持し、第1の圧延ロールと第2の圧延ロ
ールを回転させて平板素材を圧延することにより一方の
面に凹部に基づく凸状の厚板部を断続的に有する圧延成
形材を形成し、圧延によって厚板部が断続的に形成され
た圧延成形材にプレス加工を施すことにより所定の寸法
にした後、厚板部の周囲に薄板部を残して打ち抜く打ち
抜き加工を施すようにしたため、設備及び製造に要する
コスト増を招かずに優れた生産性を付与することができ
る。
As described above, according to the method for manufacturing a semiconductor package heat dissipation plate of the present invention, the first rolling roll having the concave portions arranged on the outer peripheral surface at predetermined intervals according to the dimensions of the thick plate portion, A flat plate material is sandwiched between a second rolling roll having a flat outer peripheral surface, and the flat plate material is rolled by rotating the first rolling roll and the second rolling roll, thereby forming a recess on one surface. After forming a rolled formed material having convex thick plate portions intermittently, and pressing the rolled formed material in which the thick plate portions are intermittently formed by rolling to a predetermined size, the thick plate portion is formed. Since the punching process is performed to leave the thin plate portion around the periphery of, the excellent productivity can be provided without increasing the cost required for equipment and manufacturing.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明における半導体パッケージ用放熱板の一
製造工程を示す斜視図である。
FIG. 1 is a perspective view showing one manufacturing process of a heat sink for a semiconductor package according to the present invention.

【図2】放熱板の打抜き加工を示す断面図である。FIG. 2 is a cross-sectional view showing a punching process of a heat dissipation plate.

【図3】圧延成形材の整形工程を示す断面図である。FIG. 3 is a cross-sectional view showing a step of shaping a rolled material.

【図4】圧延成形材の他の打ち抜き方法を示す斜視図で
ある。
FIG. 4 is a perspective view showing another method for punching a rolled formed material.

【図5】従来の半導体パッケージを示す断面図である。FIG. 5 is a cross-sectional view showing a conventional semiconductor package.

【図6】従来の半導体パッケージ用放熱板の斜視図を示
す。
FIG. 6 shows a perspective view of a conventional heat sink for a semiconductor package.

【符号の説明】 1 放熱板 1A 平坦部 1B 凹部 2 型ロール 3 平ロール 4 平板素材 5,20 厚板部 6,21 薄板部 7 拡張部 8 圧延成形材 9 下金型 10 凹部 11 上金型 12 整形金型 13 平板 14 未切断部 15 半導体チップ 16 ボンディングワイヤ 17 リード 18 モールド樹脂 19 放熱フィン 22 放熱面[Explanation of symbols] 1 heat sink 1A flat part 1B recessed part 2 type roll 3 flat roll 4 flat plate material 5,20 thick plate part 6,21 thin plate part 7 expanded part 8 rolled forming material 9 lower mold 10 recessed part 11 upper mold 12 Shaping Mold 13 Flat Plate 14 Uncut Part 15 Semiconductor Chip 16 Bonding Wire 17 Lead 18 Mold Resin 19 Radiating Fin 22 Radiating Surface

───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.6 識別記号 庁内整理番号 FI 技術表示箇所 H01L 23/29 H01L 23/36 A (72)発明者 篠原 芳樹 茨城県土浦市木田余町3550番地 日立電線 株式会社土浦工場内─────────────────────────────────────────────────── ─── Continuation of front page (51) Int.Cl. 6 Identification number Internal reference number FI Technical indication location H01L 23/29 H01L 23/36 A (72) Inventor Yoshiki Shinohara 3550 Kidayomachi, Tsuchiura City, Ibaraki Prefecture Hitachi Cable Co., Ltd. Tsuchiura factory

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】 放熱面を有する厚板部と、前記厚板部の
周囲に前記厚板部より小なる厚みを有する薄板部を設け
た凸形断面形状を成し、モールド成形後、前記放熱面が
モールド樹脂の表面に露出される半導体パッケージ用放
熱板の製造方法において、 前記厚板部の寸法に応じた凹部を所定の間隔で外周面に
配置した第1の圧延ロールと、平坦な外周面を有する第
2の圧延ロールとの間に平板素材を挟持し、 前記第1の圧延ロールと前記第2の圧延ロールを回転さ
せて前記平板素材を圧延することにより一方の面に前記
凹部に基づく凸状の前記厚板部を断続的に有する圧延成
形材を形成し、 圧延によって前記厚板部が断続的に形成された前記圧延
成形材にプレス加工を施すことにより所定の寸法にした
後、前記厚板部の周囲に前記薄板部を残して打ち抜く打
ち抜き加工を施すことを特徴とする半導体パッケージ用
放熱板の製造方法。
1. A convex section having a thick plate portion having a heat radiation surface and a thin plate portion having a thickness smaller than that of the thick plate portion around the thick plate portion is formed, and the heat radiation is performed after molding. A method of manufacturing a heat sink for a semiconductor package, the surface of which is exposed to the surface of a molding resin, comprising: a first rolling roll having concave portions arranged on the outer peripheral surface at predetermined intervals according to the dimensions of the thick plate portion; and a flat outer periphery. A flat plate material is sandwiched between a second rolling roll having a surface, and the flat plate material is rolled by rotating the first rolling roll and the second rolling roll to form the concave portion on one surface. After forming a rolled formed material having the convex thick plate portion intermittently based on, after the rolled molded material in which the thick plate portion is intermittently formed by rolling is pressed into a predetermined size Leaving the thin plate portion around the thick plate portion A method of manufacturing a heat sink for a semiconductor package, which comprises performing a punching process.
【請求項2】 前記プレス加工は前記圧延成形材の前記
厚板部及び前記薄板部を同時に整形する請求項第1項記
載の半導体パッケージ用放熱板の製造方法。
2. The method for manufacturing a heat dissipation plate for a semiconductor package according to claim 1, wherein the press working shapes the thick plate portion and the thin plate portion of the rolled formed material at the same time.
【請求項3】 前記打ち抜き加工は、前記薄板部に未切
断部を残すことにより部分的に打ち抜く請求項第2項記
載の半導体パッケージ用放熱板の製造方法。
3. The method for manufacturing a heat dissipation plate for a semiconductor package according to claim 2, wherein the punching process is partially punching by leaving an uncut portion in the thin plate portion.
JP22687695A 1995-09-04 1995-09-04 Manufacture of heat sink for semiconductor package Pending JPH0966334A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP22687695A JPH0966334A (en) 1995-09-04 1995-09-04 Manufacture of heat sink for semiconductor package

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22687695A JPH0966334A (en) 1995-09-04 1995-09-04 Manufacture of heat sink for semiconductor package

Publications (1)

Publication Number Publication Date
JPH0966334A true JPH0966334A (en) 1997-03-11

Family

ID=16851966

Family Applications (1)

Application Number Title Priority Date Filing Date
JP22687695A Pending JPH0966334A (en) 1995-09-04 1995-09-04 Manufacture of heat sink for semiconductor package

Country Status (1)

Country Link
JP (1) JPH0966334A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100957626B1 (en) * 2008-03-17 2010-05-13 황춘섭 Producing method of electrode
JP2014073517A (en) * 2012-10-04 2014-04-24 Denso Corp Method of manufacturing metal piece
CN109848213A (en) * 2018-12-06 2019-06-07 南京理工大学 The method that nonuniform section rolling prepares multiple grain scale magnesium alloy plate

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100957626B1 (en) * 2008-03-17 2010-05-13 황춘섭 Producing method of electrode
JP2014073517A (en) * 2012-10-04 2014-04-24 Denso Corp Method of manufacturing metal piece
CN109848213A (en) * 2018-12-06 2019-06-07 南京理工大学 The method that nonuniform section rolling prepares multiple grain scale magnesium alloy plate

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