JPH08316381A - Manufacture of heat sink for semiconductor package - Google Patents

Manufacture of heat sink for semiconductor package

Info

Publication number
JPH08316381A
JPH08316381A JP7123673A JP12367395A JPH08316381A JP H08316381 A JPH08316381 A JP H08316381A JP 7123673 A JP7123673 A JP 7123673A JP 12367395 A JP12367395 A JP 12367395A JP H08316381 A JPH08316381 A JP H08316381A
Authority
JP
Japan
Prior art keywords
heat sink
plating
rolling
semiconductor package
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7123673A
Other languages
Japanese (ja)
Inventor
Yoshiki Shinohara
芳樹 篠原
Makoto Oba
誠 大場
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Cable Ltd
Original Assignee
Hitachi Cable Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Cable Ltd filed Critical Hitachi Cable Ltd
Priority to JP7123673A priority Critical patent/JPH08316381A/en
Publication of JPH08316381A publication Critical patent/JPH08316381A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation

Landscapes

  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

PURPOSE: To mass produce high quality heat sink by sustaining the material in hooped state even after it is deformed through rolling so that any type of continuous plating can be applied thereto. CONSTITUTION: A flat bar 14 is rolled by means of a roll 11 provided with holes 12 at a predetermined interval on the periphery thereof and a paired flat roll 13. Consequently, a deformed bar 17 having thick plate parts 15 not subjected to rolling because of the hole and a rolled thin plate part 16 on the periphery thereof is produced continuously. The deformed bar 17 is then passed through a continuous plating bath. Since the material is sustained in hooped state even after it is shaped roughly by primary machining, the material can be plated continuously. This method can mass produce a low price high quality heat sink as compared with piece plating.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、半導体チップの発する
熱エネルギーを吸収・分散させるための半導体パッケー
ジ用放熱板の製造方法に係り、特に表面に施すめっき方
法を改善したものに関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a heat sink for a semiconductor package for absorbing and dispersing heat energy generated by a semiconductor chip, and more particularly to an improved method of plating a surface.

【0002】[0002]

【従来の技術】QFPなどのLSIロジック系のパッケ
ージでは、高密度化・高速化の急速な進行に伴い、所要
消費電力が増大し放熱性の問題が重要となってきてい
る。そこで、熱放散性を考慮したパッケージ構造が検討
されている。
2. Description of the Related Art In LSI logic packages such as QFP, the required power consumption is increased and the problem of heat dissipation is becoming more important with the rapid progress of high density and high speed. Therefore, a package structure considering heat dissipation is being studied.

【0003】図3に熱放散性を考慮したパッケージ構造
の例を示す。図3(a)はモールド樹脂1内に比較的板
厚の薄い放熱板2を埋め込んだものであり、半導体チッ
プ3の熱を放熱板2が吸収する。図1(b)は比較的板
厚の厚い放熱板2を樹脂1内に埋込み、放熱板2の一部
をパッケージ外に露出した構造になっている。このため
図3(a)の構造より大きな発熱に対応可能である。図
3(c)は、(b)の放熱板2にさらにフィン4を取り
付けることによって放熱性を向上させたものである。こ
れらに使用される放熱板2には、放熱性の点から熱伝導
率の高い純銅や銅合金が用いられる。
FIG. 3 shows an example of a package structure in consideration of heat dissipation. FIG. 3A shows a heat sink 2 having a relatively thin plate embedded in the mold resin 1, and the heat sink 2 absorbs the heat of the semiconductor chip 3. FIG. 1B shows a structure in which a radiator plate 2 having a relatively large thickness is embedded in a resin 1 and a part of the radiator plate 2 is exposed outside the package. Therefore, it is possible to cope with a larger amount of heat generation than the structure of FIG. In FIG. 3C, fins 4 are further attached to the heat dissipation plate 2 of FIG. 3B to improve heat dissipation. For the heat dissipation plate 2 used for these, pure copper or copper alloy having high heat conductivity is used from the viewpoint of heat dissipation.

【0004】[0004]

【発明が解決しようとする課題】上述した放熱板の中で
は、放熱性の高い図3(b)または(c)に使用される
タイプの放熱板が注目されている。そのタイプの放熱板
2では一部がパッケージ外に露出した形で使用されるた
め、信頼性の点から放熱板2と樹脂1との密着性が重要
となる。このため放熱板2を異形状に形成し、パッケー
ジの外には厚板部2aの一部を露出させ、その厚板部2
aの周囲4方向に設けた薄板部2bを樹脂1に埋め込ま
せることで、密着性を向上するとともに、水分進入経路
を長くしている。
Among the heat dissipation plates described above, the heat dissipation plate of the type used in FIG. 3 (b) or (c), which has a high heat dissipation property, has attracted attention. Since a part of the heat sink 2 of that type is exposed outside the package, the adhesion between the heat sink 2 and the resin 1 is important from the viewpoint of reliability. Therefore, the heat dissipation plate 2 is formed in a different shape, a part of the thick plate portion 2a is exposed outside the package, and the thick plate portion 2a is exposed.
By embedding the thin plate portions 2b provided in the four directions around a in the resin 1, the adhesiveness is improved and the moisture entry path is lengthened.

【0005】また、一般的に銅及び銅合金の樹脂密着性
は良くないため、放熱板2の表面にNiめっきなどのめ
っきを施して使用している。
In general, the resin adhesion of copper and copper alloys is not good, so the surface of the heat sink 2 is used by being plated with Ni or the like.

【0006】ところで、このような厚板部の周囲4方向
に薄板部を有する異形状の放熱板の製造方法としては、
第1に放熱板の厚板部の板厚をもつ平条素材から薄板部
となる部分を切削する機械加工法がある。第2にプレス
加工により平条素材から厚板部と薄板部とを有する異形
条を成形し、その後必要な寸法に打抜くプレス法があ
る。これらの機械加工法、プレス法ともに放熱板にめっ
きを施す場合、1つ1つ行うピースめっき法が採用され
る。
By the way, as a method of manufacturing a heat sink having a different shape having thin plate portions in four directions around the thick plate portion,
First, there is a machining method for cutting a thin plate portion from a flat strip material having a plate thickness of the heat radiating plate. Secondly, there is a pressing method in which a deformed strip having a thick plate portion and a thin plate portion is formed from a flat strip material by press working and then punched into a required size. In both the machining method and the pressing method, when the heat sink is plated, a piece plating method is performed one by one.

【0007】しかし、機械加工法、プレス法ともに放熱
板にめっきを施す場合、1つ1つ行うピースめっきでは
めっきコストが高くなるという問題がある。この点で、
大量にめっきができるバレルめっきを採用することも考
えられるが、バレルめっきでは、めっきの種類に制限が
あることや、傷などの表面状態に問題がある。
However, in both the machining method and the pressing method, when the heat sink is plated, piece plating performed one by one has a problem that the plating cost becomes high. In this respect,
It may be possible to adopt barrel plating, which enables large-scale plating, but barrel plating has problems in surface conditions such as scratches and restrictions on the type of plating.

【0008】本発明の目的は、前記した従来技術の問題
点を解消し、高品質で任意種類の連続めっきが可能で、
量産向きの半導体パッケージ用放熱板の製造方法を提供
することにある。
The object of the present invention is to solve the above-mentioned problems of the prior art and to enable continuous plating of any kind with high quality.
It is to provide a method of manufacturing a heat sink for a semiconductor package suitable for mass production.

【0009】[0009]

【課題を解決するための手段】本発明の半導体パッケー
ジ用放熱板の製造方法は、穴付きロールと平ロールとで
平条を圧延して、穴により圧延されないで形成される厚
板部と、その周囲に圧延されて形成される薄板部とを有
する異形条を成形し、得られた異形条を連続めっき装置
に通して異形条に連続的にめっきを施すものである。
A method for manufacturing a heat sink for a semiconductor package according to the present invention comprises rolling a flat strip with a roll having holes and a flat roll, and a thick plate portion formed without being rolled by the holes. A profiled strip having a thin plate portion formed by rolling around the profiled profile is formed, and the profiled strip obtained is passed through a continuous plating apparatus to continuously plate the profiled strip.

【0010】また、本発明の半導体パッケージ用放熱板
の製造方法は、めっきを施した異形条をプレス加工機に
導いてさらにプレス加工し、厚板部の周囲に所定の寸法
の薄板部を残しながらピース切断するようにしたもので
ある。この場合、圧延により得られる異形条を多条化し
て、プレス加工により得られるピースを多個取りできる
ようにすることが好ましい。
Further, in the method for manufacturing a heat sink for a semiconductor package according to the present invention, the plated profiled strip is guided to a press machine for further press work, and a thin plate part having a predetermined size is left around the thick plate part. While cutting the piece. In this case, it is preferable that the profiled strips obtained by rolling be made into multiple strips so that multiple pieces obtained by press working can be taken.

【0011】[0011]

【作用】まず、穴付きロールで平条を異形条に成形す
る。穴付きロールと平ロールとで平条を圧延すると、穴
部で厚板部が、その他の部分で薄板部が形成されて、長
手方向に所定の間隔に厚板部を有する異形条が高能率的
に成形される。
[Function] First, a flat strip is formed into a deformed strip with a roll having holes. When a flat strip is rolled with a holed roll and a flat roll, a thick plate part is formed in the hole part and a thin plate part is formed in the other part. Is molded into a desired shape.

【0012】次に、圧延により得られた異形条を連続め
っき装置に通して異形条の表面に必要とするめっきを施
す。このとき圧延後の材料はフープ条となっているの
で、連続的にめっきを施すことができる。
Next, the profiled strip obtained by rolling is passed through a continuous plating device to apply the required plating to the surface of the profiled strip. At this time, since the rolled material is a hoop strip, plating can be continuously applied.

【0013】そして、めっきした異形条をプレス加工機
に導いて厚板部の周囲に所定の寸法の薄板部を残しなが
らピース切断による打抜きを行い製品化する。
Then, the plated profiled strip is guided to a press working machine and punched by piece cutting while leaving a thin plate portion of a predetermined size around the thick plate portion to obtain a product.

【0014】[0014]

【実施例】以下に本発明の実施例を説明する。図1は本
実施例による半導体パッケージ用放熱板の製造方法を示
す。ここで製造する放熱板は、図3(b)または(c)
のタイプの異形条の放熱板であり、材質は熱伝導性に優
れたOFC(無酸素銅)を標準とするが、他の銅合金で
もよい。樹脂密着性の点から、放熱板表面にめっき処理
を必要とする。
Embodiments of the present invention will be described below. FIG. 1 shows a method of manufacturing a heat sink for a semiconductor package according to this embodiment. The heat dissipation plate manufactured here is shown in FIG. 3 (b) or (c).
This type of heat radiating plate has a modified strip, and the standard material is OFC (oxygen-free copper) having excellent thermal conductivity, but other copper alloys may be used. Plating treatment is required on the surface of the heat sink from the viewpoint of resin adhesion.

【0015】まず、平条素材の一次加工として圧延によ
る粗成形を行う。そのために、ロールの周面に所定の間
隔で穴12を設けた穴付きロール11と、これと対をな
す平ロール13とにより平条14を圧延する。すると、
穴12により圧延されないで形成される厚板部15と、
その周囲に圧延されて形成される薄板部16とを有する
異形条17が連続的に成形される。
First, rough forming by rolling is performed as the primary processing of the flat strip material. For that purpose, the flat strip 14 is rolled by the perforated roll 11 provided with the holes 12 at predetermined intervals on the peripheral surface of the roll and the flat roll 13 paired with the perforated roll 11. Then
A thick plate portion 15 formed without being rolled by the hole 12,
The profiled strip 17 having the thin plate portion 16 formed by rolling around the periphery is continuously formed.

【0016】次に、連続めっきを行う。圧延により得ら
れた異形条17を連続めっき装置18に通して異形条1
7に連続的にめっきを施す。めっきはNiめっきの他
に、Sn−Ni、Ag、Cu、Auめっきなどがある。
一次加工の粗成形後も材料はフープ条となっているの
で、連続的にめっきを施すことができる。一般に連続め
っきは、ピースめっきよりもめっき品質が優れており、
また多種のめっきが可能であり、目的に応じて任意のめ
っきを選択できるメリットがある。また、フープ材での
めっき処理はピースめっきに比してコスト上有利であ
る。
Next, continuous plating is performed. The profiled strip 17 obtained by rolling is passed through a continuous plating device 18 to form the profiled strip 1.
7 is continuously plated. The plating includes Sn-Ni, Ag, Cu, Au plating, etc., in addition to Ni plating.
Since the material is a hoop strip even after the rough forming of the primary processing, it is possible to continuously perform plating. In general, continuous plating has better plating quality than piece plating,
Further, various kinds of plating are possible, and there is an advantage that any plating can be selected according to the purpose. Further, the plating treatment with the hoop material is more cost effective than the piece plating.

【0017】さらに、二次加工としてプレスによる調整
・打抜き成形して製品化する。めっきを施した異形条1
7をプレス加工機19に導いて打抜き加工し、厚板部1
5の周囲に所定の寸法の薄板部16を残しながらピース
切断して製品化する。
Further, as secondary processing, adjustment / punch molding by a press is performed to obtain a product. Plated profiled strip 1
7 is guided to a press machine 19 and punched, and the thick plate portion 1
A piece is cut into a product while leaving a thin plate portion 16 having a predetermined size around the periphery of the product 5.

【0018】図2に、このようにして製品化された異形
状の半導体パッケージ用放熱板20を示す。
FIG. 2 shows a heat sink 20 for a semiconductor package having a different shape, which is manufactured as described above.

【0019】本実施例によれば、概略の形状は、一次加
工の穴付きロールによって高速で圧延形成され、次のプ
レスによる二次加工は簡単な寸法・形状調整とピース切
断打抜きとなる。よって他の製法、例えば全工程をプレ
スやエッチングで行う方法と比べて、高速・高能率的に
製品化でき、量産向きである。
According to this embodiment, the rough shape is rolled and formed at a high speed by the holed roll of the primary processing, and the secondary processing by the next press is simple size / shape adjustment and piece cutting punching. Therefore, as compared with other manufacturing methods, for example, a method in which all steps are performed by pressing or etching, it can be commercialized at high speed and with high efficiency and is suitable for mass production.

【0020】特に、フープ状態でめっきを行うので、め
っきのコストを低減し、どんな種類のめっきにも対応す
ることができ、表面品質の優れた放熱板を製造すること
ができる。
In particular, since the plating is performed in the hoop state, the cost of plating can be reduced, any kind of plating can be applied, and a heat sink having excellent surface quality can be manufactured.

【0021】また、製品化された放熱板は、異形断面で
あるため、樹脂との密着性が向上し、また湿気侵入の経
路が延長されることにもなり、耐湿性も向上する。ま
た、半導体パッケージの高出力化、高信頼性化を実現で
きる。
Further, since the commercialized heat sink has a modified cross section, the adhesiveness with the resin is improved, the path of moisture intrusion is extended, and the moisture resistance is also improved. In addition, higher output and higher reliability of the semiconductor package can be realized.

【0022】なお、上述した実施例では単一条を取り扱
った場合について説明したが、素材にもっと幅広の平条
を用い、並列穴付きロールを使用して圧延加工すること
で厚板部を並列に有する多条化された異形条を形成し、
これをフープめっきし、プレスにより放熱板製品を多個
取りするようにしてもよい。
In the above-mentioned embodiment, the case where a single strip is handled has been described, but a wider flat strip is used as the material, and the thick plate portions are arranged in parallel by rolling using a roll with parallel holes. To form a multi-stripe modified strip having
This may be subjected to hoop plating, and a large number of radiator plate products may be taken by pressing.

【0023】[0023]

【発明の効果】本発明によれば、圧延による異形条形成
後も、材料はフープ条となっているので、連続めっきが
可能であり、ピースめっきよりも安価かつ高品質で、任
意の種類のめっきが可能となる。
According to the present invention, since the material is a hoop strip even after the profiled strip is formed by rolling, continuous plating is possible, which is cheaper and higher in quality than piece plating, and of any type. Plating is possible.

【0024】また、本発明によれば、高速で圧延成形さ
れ、プレス加工は簡単なピース切断打抜きとなるので、
全工程をプレスやエッチングで行う方法と比べて高速、
高能率的に製品化でき量産向きである。
Further, according to the present invention, since it is roll-formed at a high speed and the press working is a simple piece cutting punching,
High speed compared to the method of performing all steps by pressing or etching,
It can be commercialized with high efficiency and is suitable for mass production.

【0025】また、本発明によれば、ピースを多個取り
できるようにしたので、一層量産向きとなる。
Further, according to the present invention, a large number of pieces can be taken, which is more suitable for mass production.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の実施例による半導体パッケージ用放熱
板の製造方法を示す説明図である。
FIG. 1 is an explanatory view showing a method of manufacturing a heat sink for a semiconductor package according to an embodiment of the present invention.

【図2】本実施例により製品化された放熱板の斜視図で
ある。
FIG. 2 is a perspective view of a heat dissipation plate commercialized according to this embodiment.

【図3】放熱性を考慮した半導体パッケージ例を示す断
面図であり、(a)は放熱板が埋め込まれたタイプ、
(b)は放熱板の一部が露出したタイプ、(c)は放熱
板にさらにフィンを取り付けたタイプである。
FIG. 3 is a cross-sectional view showing an example of a semiconductor package in consideration of heat dissipation, FIG. 3A is a type in which a heat dissipation plate is embedded,
(B) is a type in which a part of the heat sink is exposed, and (c) is a type in which fins are further attached to the heat sink.

【符号の説明】[Explanation of symbols]

11 穴付きロール 12 穴 13 平ロール 14 平条 15 厚板部 16 薄板部 17 異形条 18 連続めっき装置 19 プレス加工機 11 Rolls with Holes 12 Holes 13 Flat Rolls 14 Flat Strips 15 Thick Plates 16 Thin Plates 17 Deformed Strips 18 Continuous Plating Equipment 19 Pressing Machines

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】穴付きロールと平ロールとで平条を圧延し
て、穴により圧延されないで形成される厚板部と、その
周囲に圧延されて形成される薄板部とを有する異形条を
成形し、上記圧延により得られる異形条を連続めっき装
置に通して連続的にめっきを施したことを特徴とする半
導体パッケージ用放熱板の製造方法。
1. A profiled strip having a thick plate portion formed by rolling with a holed roll and a flat roll and not rolled by a hole, and a thin plate portion formed by rolling around it. A method for manufacturing a heat dissipation plate for a semiconductor package, which comprises molding, and passing a profiled strip obtained by the above-mentioned rolling through a continuous plating device for continuous plating.
【請求項2】請求項1に記載の半導体パッケージ用放熱
板の製造方法において、上記めっきを施した異形条をプ
レス加工機に導入してさらにプレス加工し、厚板部の周
囲に所定の寸法の薄板部を残しながらピース切断する半
導体パッケージ用放熱板の製造方法。
2. The method for manufacturing a semiconductor package heat dissipation plate according to claim 1, wherein the plated profiled strip is introduced into a press machine and further press-processed to have a predetermined dimension around the thick plate portion. A method for manufacturing a heat sink for a semiconductor package, in which pieces are cut while leaving the thin plate portion.
【請求項3】請求項2に記載の半導体パッケージ用放熱
板の製造方法において、上記圧延により得られる異形条
を多条化して、プレス加工により得られるピースを多個
取りするようにした半導体パッケージ用放熱板の製造方
法。
3. The method of manufacturing a heat sink for a semiconductor package according to claim 2, wherein the profiled strips obtained by the rolling are made into multiple strips, and a large number of pieces obtained by press working are taken. Method for manufacturing heat sink.
JP7123673A 1995-05-23 1995-05-23 Manufacture of heat sink for semiconductor package Pending JPH08316381A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7123673A JPH08316381A (en) 1995-05-23 1995-05-23 Manufacture of heat sink for semiconductor package

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7123673A JPH08316381A (en) 1995-05-23 1995-05-23 Manufacture of heat sink for semiconductor package

Publications (1)

Publication Number Publication Date
JPH08316381A true JPH08316381A (en) 1996-11-29

Family

ID=14866474

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7123673A Pending JPH08316381A (en) 1995-05-23 1995-05-23 Manufacture of heat sink for semiconductor package

Country Status (1)

Country Link
JP (1) JPH08316381A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000252397A (en) * 1999-03-03 2000-09-14 Kitani Denki Kk Press component for electric apparatus
JP2007273682A (en) * 2006-03-31 2007-10-18 Dowa Holdings Co Ltd Heat sink and manufacturing method therefor
KR100833929B1 (en) * 2001-12-15 2008-05-30 삼성테크윈 주식회사 Method for forming cavity on heat spreader of TBGA semiconductor package

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000252397A (en) * 1999-03-03 2000-09-14 Kitani Denki Kk Press component for electric apparatus
KR100833929B1 (en) * 2001-12-15 2008-05-30 삼성테크윈 주식회사 Method for forming cavity on heat spreader of TBGA semiconductor package
JP2007273682A (en) * 2006-03-31 2007-10-18 Dowa Holdings Co Ltd Heat sink and manufacturing method therefor

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