JPH0964273A - Semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To materialize the downsizing without marring the strength of a board, and perform the incorporation into a microunit with accuracy and good work efficiency by providing the periphery of a board with an incline which reduces the thickness. SOLUTION: In the mirror frame 11 of the tip unit of an electron endoscope, one end of the substrate 21 of a semiconductor device is connected by soldering to one terminal 13 of a package 21 such as a solid-state image pickup element, or the like, and one end of an external signal line 15 is connected by soldering to the chip part of the semiconductor device, and the other hand is connected by soldering to the other terminal 14 of the package 12. At that time, since a chamfered part 22 is made at the substrate 21 constituting the semiconductor device, it can be thinned substantially without marring the strength of the substrate 21, and the degree of the interference with the mirror frame 11 of the external signal line 15 becomes small, and the routing of the external signal line 15, and others can be performed smoothly, and the incorporation into the microunit can be performed accurately and besides with good work efficiency.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device, and more particularly to a semiconductor device incorporated and used in a minute unit such as a tip portion of an electronic endoscope.

[0002]

2. Description of the Related Art Conventionally, as a semiconductor device incorporated in a minute unit such as a tip portion of an electronic endoscope, for example, Japanese Patent Laid-Open No. 63-308954 discloses a structure shown in FIG. Has been done. That is, in FIG.
Reference numeral 1 denotes a substrate, on which an IC chip 2 is connected by a bonding wire 3 and mounted by being sealed with a sealing resin 4, and a chip component 5 such as a resistor or a capacitor is mounted on the substrate 1. The semiconductor device 6 is configured by being connected and mounted.

When the semiconductor device 6 having such a structure is incorporated in the distal end unit of the electronic endoscope, one terminal of the package 12 such as a solid-state image pickup device is provided in the lens frame 11 of the unit. 13, the substrate 1 of the semiconductor device 6
So that one end of the external signal line 15 is connected to the chip component 5 of the semiconductor device 6 by soldering and the other is connected to the other terminal 14 of the package 12 by soldering. It has become.

[0004]

By the way, when the semiconductor device is incorporated in the unit such as the distal end portion of the electronic endoscope as described above, the problem does not occur when the unit is large, but the unit becomes smaller and the semiconductor becomes smaller. When the space for arranging the device is limited, not only the external signal line connected to the semiconductor device and the lens frame start to interfere with each other as shown in FIG. 7, but also the work of arranging and connecting the semiconductor substrate becomes extremely difficult. ,
It is also difficult to downsize the unit. This is partly due to the fact that the substrate that constitutes the semiconductor device has a certain thickness. Therefore, it is possible to make the substrate itself thin, but if the substrate itself is made thin, the substrate strength decreases,
Substrate cracks etc. occur.

The present invention has been made in order to solve the above problems in the conventional semiconductor device. The present invention can be downsized without impairing the strength of the substrate and can be incorporated in a minute unit with high precision and workability. It is an object of the present invention to provide a semiconductor device having such a structure.

[0006]

In order to solve the above problems, the invention according to claim 1 provides a semiconductor device in which at least one semiconductor element is mounted on one side or both sides of the substrate. An inclined portion is provided in the peripheral portion, the thickness of which gradually decreases. According to a second aspect of the present invention, in the semiconductor device according to the first aspect, the inclined portion of the substrate is formed by a chamfered portion formed on the upper surface or the lower surface of the substrate. In the semiconductor device described in 1, the inclined portion of the substrate is formed by chamfered portions formed on the upper surface and the lower surface of the substrate. Moreover, claims 4, 5,
According to the sixth aspect of the present invention, in the semiconductor device according to the second or third aspect, the chamfered portion is configured such that the surface thereof has a substantially flat shape, a concave shape, or a convex shape.

By configuring the semiconductor device in this way, the thickness of the substrate can be substantially reduced in the positional relationship with other members such as the external signal line while maintaining the strength of the substrate, and the size can be reduced. Can be planned. In particular, by making the surface of the chamfered portion convex, it is possible to eliminate the edge portion due to the chamfered portion, and it is possible to effectively prevent coating breakage or disconnection at the time of contact with the external signal line.

[0008]

BEST MODE FOR CARRYING OUT THE INVENTION Next, examples will be described. FIG. 1 is a sectional view showing a first embodiment of a semiconductor device according to the present invention, and the same or corresponding members as those of the conventional example shown in FIG. 6 are designated by the same reference numerals. In FIG. 1, reference numeral 21 designates a substrate made of ceramic, glass fiber reinforced epoxy resin, glass, metal or the like, and a chamfered portion 22 is formed on the lower surface at one end. When glass, silicon, or metal, which is relatively easy to etch, is used as the means for forming the chamfer 22, the chamfer is formed by a dry or wet etching process. On the other hand, when a ceramic or glass fiber reinforced epoxy resin that is difficult to etch is used, the chamfered portion is formed by mechanical processing such as a grinder. In the case of a substrate with a thickness of 0.4 mm and a length of 5 mm, the chamfer depth of the chamfer is 0.1 to 0.
It is desirable that the length of the chamfer is about 3 mm and the length of the chamfer is about 0.8 to 1.0 mm from the end face.

Then, on the surface of the substrate 21 having the chamfered portion 22 formed on the lower surface in this way, a signal processing IC and an arithmetic I
C, an IC chip 2 such as a memory IC is connected by a bonding wire 3 and mounted by being sealed with a sealing resin 4 such as epoxy, phenol, or silicon, and a chip component 5 such as a resistor or a capacitor is connected. The semiconductor device 6 is mounted and constitutes the semiconductor device 6.

A semiconductor device having such a structure is shown in FIG.
As shown in FIG. 2, when it is used by being incorporated in the distal end unit of the electronic endoscope, as in the conventional example, in the lens frame 11 of the unit, one terminal 13 of the package 12 such as a solid-state imaging device is provided. , One end of the substrate 1 of the semiconductor device 6 is connected and fixed by soldering, one of the external signal lines 15 is connected to the chip component 5 of the semiconductor device 6 by soldering, and the other is connected to the other terminal 14 of the package 12. It is designed to be connected by soldering. At that time, since the chamfered portion 22 is formed on the substrate 21 forming the semiconductor device, the substrate
21 can be made substantially thin without compromising the strength of the external signal line 15
Of the external signal line 15
It can be smoothly routed, etc., and can be incorporated into a minute unit with high precision and workability. In the above embodiment, the wire bonding method is used to connect the IC chip 2 to the substrate 21, but it goes without saying that a flip chip method may be used. The external signal line 15 is usually composed of about 2 to 10
In addition to the 12 terminals 14 and the chip component 5 of the semiconductor device 6, the substrate 21 of the semiconductor device 6 is also connected by soldering.

FIG. 3 is a sectional view showing a second embodiment of the present invention. In this embodiment, the chamfered portion 22 is formed on the upper surface of the substrate 21, and the same effect as that of the first embodiment can be obtained. Further, the chamfered portion 22 can be provided on both surfaces of the substrate 21 instead of being provided only on the lower surface or the upper surface of the substrate 21 as in the first or second embodiment. In this case, the thickness of the substrate can be further reduced. You can

FIG. 4 is a sectional view showing a third embodiment,
In this embodiment, the chamfered portion 22a provided on the lower surface of the substrate 21 has a concave surface. With this configuration, the same effect as that of the first embodiment can be obtained, and when the unit is arranged in the unit, the degree of freedom in the arrangement can be further improved.

FIG. 5 is a cross section showing a fourth embodiment. In this embodiment, the surface of the chamfered portion 22b provided on the lower surface of the substrate 21 is convex. With such a configuration, no edge portion is formed at the boundary of the chamfered portion 22b. Therefore, when incorporated in the unit, the chamfered portion 22 of the substrate 21 is not formed.
Even if the external signal line 15 comes into contact with b, it is possible to effectively prevent the coating from breaking or the wire breaking.

[0014]

As described above on the basis of the embodiments,
According to the present invention, the substrate can be substantially thinned without impairing the strength of the substrate, the semiconductor device can be downsized, and the assembly into the minute unit can be performed accurately and with good workability. It becomes possible. In particular, by making the surface of the chamfered portion provided on the substrate convex, it is possible to eliminate the edge portion and prevent the coating from breaking or breaking when the external signal line comes into contact.

[Brief description of drawings]

FIG. 1 is a sectional view showing a first embodiment of a semiconductor device according to the present invention.

FIG. 2 is a diagram showing a mode in which the semiconductor device of the first embodiment shown in FIG. 1 is incorporated in a tip unit of an electronic endoscope.

FIG. 3 is a sectional view showing a second embodiment of the present invention.

FIG. 4 is a sectional view showing a third embodiment of the present invention.

FIG. 5 is a sectional view showing a fourth embodiment of the present invention.

FIG. 6 is a cross-sectional view showing a configuration example of a conventional semiconductor device.

FIG. 7 is a diagram showing an aspect in which the semiconductor device shown in FIG. 6 is incorporated in a tip unit of an electronic endoscope.

[Explanation of symbols]

 1 substrate 2 IC chip 3 bonding wire 4 sealing resin 5 chip component 6 semiconductor device 11 mirror frame 12 package 13, 14 terminal 15 external signal line 21 substrate 22 chamfered portion 22a concave chamfered portion 22b convex chamfered portion

Claims (6)

[Claims] 1. A semiconductor device in which at least one or more semiconductor elements are mounted on one side or both sides of a substrate, wherein a peripheral portion of the substrate is provided with an inclined portion whose thickness is gradually reduced. apparatus. 2. The semiconductor device according to claim 1, wherein the inclined portion of the substrate is a chamfered portion formed on the upper surface or the lower surface of the substrate. 3. The semiconductor device according to claim 1, wherein the inclined portion of the substrate is composed of chamfered portions formed on an upper surface and a lower surface of the substrate. 4. The semiconductor device according to claim 2, wherein the chamfered portion has a substantially flat surface. 5. The semiconductor device according to claim 2, wherein the chamfered portion has a concave surface. 6. The semiconductor device according to claim 2, wherein the chamfered portion has a convex surface.