JPH0955395A - Method for assembling semiconductor element - Google Patents

Method for assembling semiconductor element

Info

Publication number
JPH0955395A
JPH0955395A JP7243995A JP24399595A JPH0955395A JP H0955395 A JPH0955395 A JP H0955395A JP 7243995 A JP7243995 A JP 7243995A JP 24399595 A JP24399595 A JP 24399595A JP H0955395 A JPH0955395 A JP H0955395A
Authority
JP
Japan
Prior art keywords
wire
coating film
semiconductor element
excimer laser
external connection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7243995A
Other languages
Japanese (ja)
Inventor
Kazutomo Takahashi
一智 高橋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ricoh Co Ltd
Original Assignee
Ricoh Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ricoh Co Ltd filed Critical Ricoh Co Ltd
Priority to JP7243995A priority Critical patent/JPH0955395A/en
Publication of JPH0955395A publication Critical patent/JPH0955395A/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78—Apparatus for connecting with wire connectors
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
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  • Engineering & Computer Science (AREA)
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  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

PROBLEM TO BE SOLVED: To enhance the bonding strength of an insulation covered wire, a semiconductor-element electrode and an external connecting terminal in wire bonding. SOLUTION: After excimer laser is projected on an insulation-covered Au wire 32 at an irradiation position 1 between a clamper 33 and a capillary 35, discharge 37 is generated between the tip of the Au wire 32 and a torch electrode 36 so as to fuse the tip part, and an Au ball is formed. In this case, the removing range of the coated film of the Au wire is surrounded with a plurality of plane mirrors. The excimer laser reflected from the plane mirrors is projected on the coated-film removing range. Thus, the coated film around the entire body is removed with respect to the coated-film removing range by one irradiation. Since the coated film is removed by the irradiation of the excimer laser, the entire body of the coated film at the specified position can be accurately removed, and the reside of the coated film is not generated at the surface of the Au ball.

Description

【発明の詳細な説明】Detailed Description of the Invention

【０００１】[0001]

【発明の属する技術分野】本発明は、ワイヤーボンディ
ング装置による半導体素子の組立方法に関するものであ
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of assembling a semiconductor element by a wire bonding device.

【０００２】[0002]

【従来の技術】半導体素子の高集積化、多ピン化に伴
い、半導体素子のサイズは小さくなる傾向にあるが、外
部接続端子としてのリードフレームは、ウエットエッチ
ングで製作するため小さくできない。半導体素子電極と
外部接続端子との間をワイヤーボンディングによりＡｕ
ワイヤーで接続するが、そのワイヤー長が３ｍｍ以上に
なることもある。2. Description of the Related Art The semiconductor element tends to be smaller in size as the semiconductor element is highly integrated and has more pins. However, the lead frame as an external connection terminal cannot be made small because it is manufactured by wet etching. Au is wire-bonded between the semiconductor element electrode and the external connection terminal.
Although they are connected by wires, the wire length may be 3 mm or more.

【０００３】ところが、ワイヤー長が３ｍｍ以上になる
と、後工程である樹脂封止工程において樹脂流動中の圧
力によりワイヤーが流され、図９に示すように、ワイヤ
ー同士が接触する問題が発生していた（樹脂封止による
ワイヤーショート）。図９において２１は半導体素子、
２２はワイヤーショート箇所、２３は外部接続リード、
２４はアイランド、２５はワイヤーである。However, when the wire length is 3 mm or more, the wire is caused to flow by the pressure during the resin flow in the resin sealing step, which is a post-process, causing a problem that the wires come into contact with each other as shown in FIG. (Wire short due to resin sealing). In FIG. 9, 21 is a semiconductor element,
22 is a wire short point, 23 is an external connection lead,
24 is an island and 25 is a wire.

【０００４】この問題を解決するため、ワイヤー同士が
接触してもショートしないように、外周面に絶縁性の有
機物を塗布したＡｕワイヤーが用いられるようになっ
た。図１０は、絶縁被覆したＡｕワイヤーの先端部にＡ
ｕボールを作製する要領を示す正面図である。すなわ
ち、ワイヤースプール３１から絶縁被覆Ａｕワイヤー３
２を繰り出し、クランパー３３および、超音波ホーン３
４に取り付けたキャピラリー３５を通し、Ａｕワイヤー
３２の先端部とトーチ電極３６との間で放電３７を発生
させ、前記先端部を溶かすことにより、図１１に示すよ
うなＡｕボール３８を作るものである。なお、図１０に
おいて、３９は画像認識用のＣＣＤカメラである。In order to solve this problem, an Au wire having an outer peripheral surface coated with an insulating organic substance has been used so that the wires do not short-circuit even if the wires come into contact with each other. Fig. 10 shows that A is attached to the tip of the Au wire with insulation coating.
It is a front view which shows the point which produces a u ball. That is, from the wire spool 31 to the insulation-coated Au wire 3
2 out, clamper 33 and ultrasonic horn 3
By passing through the capillary 35 attached to No. 4, a discharge 37 is generated between the tip of the Au wire 32 and the torch electrode 36, and melting the tip, an Au ball 38 as shown in FIG. 11 is produced. is there. In FIG. 10, 39 is a CCD camera for image recognition.

【０００５】そして、図１２に示すように、上記Ａｕボ
ール３８を半導体素子４１の電極に押し付けて半導体素
子４１とＡｕワイヤー３２を接合し、外部電極との接合
では、Ａｕワイヤー３２の他端部を外部接続端子４２に
押し付けて圧着接合（超音波を併用）していた。Then, as shown in FIG. 12, the Au ball 38 is pressed against the electrode of the semiconductor element 41 to bond the semiconductor element 41 and the Au wire 32, and the other end of the Au wire 32 is bonded to the external electrode. Was pressed against the external connection terminal 42 and pressure-bonded (using ultrasonic waves together).

【０００６】[0006]

【発明が解決しようとする課題】しかし、上記ワイヤー
ボンディングでは、Ａｕボール３８の作製時に被覆膜
（絶縁膜）とＡｕが同時に溶融し、溶けた被覆膜がＡｕ
ボール３８の表面に浮き出る結果、図１１に示すよう
に、Ａｕボール３８の表面に被覆膜の残骸３２ａが発生
するため、Ａｕボール３８と半導体素子４１の電極との
接合強度が低下する問題があった。また、外部接続端子
４２側では図１２に示すように、絶縁被覆Ａｕワイヤー
３２を端子に押し付けるだけであるため、Ａｕワイヤー
・端子間の接合強度が不足する問題もあった。なお、図
１１において白抜き部分は、絶縁膜を除去した部分を示
し、図１１，図１２においてハッチングを施した部分
は、絶縁膜を施した部分（絶縁被覆部）を示している。However, in the above wire bonding, the coating film (insulating film) and Au are melted at the same time when the Au ball 38 is manufactured, and the molten coating film is Au.
As a result of the protrusions on the surface of the ball 38, as shown in FIG. 11, the coating film remnants 32a are generated on the surface of the Au ball 38, so that the bonding strength between the Au ball 38 and the electrode of the semiconductor element 41 decreases. there were. Further, on the side of the external connection terminal 42, as shown in FIG. 12, since the insulation-coated Au wire 32 is merely pressed against the terminal, there is a problem that the bonding strength between the Au wire and the terminal is insufficient. Note that, in FIG. 11, a white part indicates a part where the insulating film is removed, and a hatched part in FIGS. 11 and 12 indicates a part where the insulating film is applied (insulating coating part).

【０００７】本発明は、上記の点に鑑みなされたもの
で、その目的は、半導体素子のワイヤーボンディングに
おいて、Ａｕボール表面での被覆膜（絶縁膜）の残骸発
生を防止することによりＡｕボールと半導体素子電極と
の接合強度を高めるとともに、Ａｕワイヤーと外部接続
端子との接合強度を高めることにあり、そのための手段
として、Ａｕワイヤー等のボンディングワイヤーの被覆
膜を簡単、かつ的確に除去することできる方法を提供す
ることにある。The present invention has been made in view of the above points, and an object thereof is to prevent the formation of a wreck of a coating film (insulating film) on the surface of an Au ball in wire bonding of a semiconductor element. The purpose is to increase the bonding strength between the Au wire and the external connection terminal as well as the bonding strength between the semiconductor wire and the semiconductor element electrode. As a means for this purpose, the coating film of the bonding wire such as the Au wire can be easily and accurately removed. To provide a method that can be done.

【０００８】[0008]

【課題を解決するための手段】請求項１に記載の半導体
素子の組立方法は、アイランド上に半導体素子を実装
し、半導体素子に電極を、アイランドの外周に外部との
接続用の端子をそれぞれ設け、前記半導体素子電極と前
記外部接続端子との間を、絶縁被覆ワイヤーを使用して
ワイヤーボンディングにより接続する方法において、ワ
イヤーボンディングを行う前に、前記絶縁被覆ワイヤー
における、前記半導体素子電極との接続部の被覆膜、お
よび前記外部接続端子との接続部の被覆膜を、エキシマ
レーザ照射により除去することを特徴とする。According to a first aspect of the present invention, there is provided a method for assembling a semiconductor element, wherein the semiconductor element is mounted on an island, an electrode is mounted on the semiconductor element, and terminals for external connection are provided on the outer periphery of the island. Provided, between the semiconductor element electrode and the external connection terminal, in the method of connecting by wire bonding using an insulating coating wire, before performing wire bonding, in the insulating coating wire, with the semiconductor element electrode The coating film of the connection part and the coating film of the connection part with the external connection terminal are removed by excimer laser irradiation.

【０００９】請求項２に記載の半導体素子の組立方法
は、請求項１において、前記絶縁被覆ワイヤーの被覆膜
除去範囲を決定するに際し、画像認識装置によりワイヤ
ーボンディング装置上の半導体素子および外部接続端子
の、所定位置からのＸ方向，Ｙ方向およびθ方向のズレ
を検知するとともに、ワイヤーのループパラメータによ
り、半導体素子電極から外部接続リードまでのワイヤー
長を算出し、ワイヤーボンディングヘッドの移動速度に
より、エキシマレーザ照射のタイミングを自動的に設定
することを特徴とする。According to a second aspect of the present invention, there is provided a method of assembling a semiconductor element according to the first aspect, in which the image recognition device determines the semiconductor film on the wire bonding device and an external connection when the coating film removal range of the insulating coated wire is determined. It detects the deviation of the terminal from the predetermined position in the X, Y and θ directions, and calculates the wire length from the semiconductor element electrode to the external connection lead by the wire loop parameter, and the movement speed of the wire bonding head. The feature is that the timing of excimer laser irradiation is automatically set.

【００１０】請求項３に記載の半導体素子の組立方法
は、請求項２において、実際に被覆膜が除去された範囲
および位置が最適かどうかを画像処理装置により判定
し、最適でない場合にはエキシマレーザ照射のタイミン
グを補正した後、再び被覆膜の除去操作を行うことを特
徴とする。According to a third aspect of the present invention, in the method of assembling a semiconductor element according to the second aspect, the image processing apparatus determines whether or not the range and position where the coating film is actually removed are optimum. After the excimer laser irradiation timing is corrected, the coating film removing operation is performed again.

【００１１】請求項４に記載の半導体素子の組立方法
は、請求項１，２または３において、前記絶縁被覆ワイ
ヤーの被覆膜除去範囲を反射ミラーで包囲し、該反射ミ
ラーにエキシマレーザを照射するとともに、前記反射ミ
ラーで反射させたエキシマレーザを前記被覆膜除去範囲
に照射することにより、該被覆膜除去範囲について、そ
の全周の被覆膜を除去することを特徴とする。According to a fourth aspect of the present invention, there is provided a method of assembling a semiconductor device according to the first, second or third aspect, in which a coating film removal area of the insulating coating wire is surrounded by a reflection mirror and the reflection mirror is irradiated with an excimer laser. In addition, by irradiating the coating film removal area with the excimer laser reflected by the reflection mirror, the coating film on the entire circumference of the coating film removal area is removed.

【００１２】請求項５に記載の半導体素子の組立方法
は、請求項１，２，３または４において、前記絶縁被覆
ワイヤーのエキシマレーザ照射範囲は、ワイヤーボンデ
ィング装置のキャピラリー取付け部からワイヤースプー
ル取付け部までとすることを特徴とする。According to a fifth aspect of the present invention, in the method for assembling a semiconductor device according to the first, second, third or fourth aspect, the excimer laser irradiation range of the insulating coated wire is from the capillary attachment portion of the wire bonding apparatus to the wire spool attachment portion. It is characterized by being up to.

【００１３】請求項１に記載の半導体素子の組立方法に
おいては、ワイヤーボンディングを行う前に、絶縁被覆
ワイヤーの所定部分の被覆膜をエキシマレーザ照射によ
り除去するため、半導体素子電極との接続部の被覆膜、
および外部接続端子との接続部の被覆膜全体を的確に除
去することができ、従来法と違ってＡｕボールの表面に
被覆膜の残骸が発生することがない。その結果、ワイヤ
ーボンディングによるＡｕボールと半導体素子電極との
接合強度および、Ａｕワイヤーと外部接続端子との接合
強度が向上する。In the method of assembling a semiconductor device according to the first aspect, since the coating film of a predetermined portion of the insulating coated wire is removed by excimer laser irradiation before performing wire bonding, the connection portion with the semiconductor device electrode is formed. Coating film,
Also, the entire coating film at the connection portion with the external connection terminal can be removed accurately, and unlike the conventional method, no coating film debris is generated on the surface of the Au ball. As a result, the bonding strength between the Au ball and the semiconductor element electrode by wire bonding and the bonding strength between the Au wire and the external connection terminal are improved.

【００１４】[0014]

【発明の実施の形態】以下、本発明の実施の形態を図面
を基に説明する。 実施の形態１ 図１は、ワイヤーボンディング装置のボンディングヘッ
ドの概略図、すなわちＡｕワイヤーの被覆膜除去工程を
示す正面図である。図２は、図１の一部拡大図であっ
て、被覆膜の一部が除去されたＡｕワイヤーを示す正面
図である。図３（ａ）は、図２のＡｕワイヤーによる半
導体素子電極と外部接続端子との接続状態の一例を示す
正面図であり、図３（ｂ）はその別例を示す正面図であ
る。Embodiments of the present invention will be described below with reference to the drawings. Embodiment 1 FIG. 1 is a schematic view of a bonding head of a wire bonding apparatus, that is, a front view showing a step of removing a coating film of an Au wire. FIG. 2 is a partially enlarged view of FIG. 1, and is a front view showing the Au wire from which a part of the coating film is removed. 3A is a front view showing an example of a connection state between the semiconductor element electrode and the external connection terminal by the Au wire of FIG. 2, and FIG. 3B is a front view showing another example thereof.

【００１５】このボンディング装置の構成は、Ａｕワイ
ヤー３２にエキシマレーザを照射できるようにした点以
外は、図１０のボンディング装置と同一であり、図１０
と同一の要素には同一の符号を付してある。ワイヤース
プール３１からの絶縁被覆Ａｕワイヤー３２を、クラン
パー３３とキャピラリー３５の間の照射位置１でエキシ
マレーザを照射した後、Ａｕワイヤー３２の先端部とト
ーチ電極３６との間で放電３７を発生させ、前記先端部
を溶かすことにより、図２に示すＡｕボール３８を作る
ものである。この場合、エキシマレーザの照射は、Ａｕ
ワイヤーについて間欠的に行い、図２に示すようにＡｕ
３８ボール作製用の被覆膜除去部分Ｅａ、外部接続端子
４２との接続用の被覆膜除去部分Ｅｂ、Ａｕ３８ボール
作製用の被覆膜除去部分Ｅｃ…の順に形成するものであ
る。The structure of this bonding apparatus is the same as that of the bonding apparatus shown in FIG. 10 except that the Au wire 32 can be irradiated with an excimer laser.
The same elements as those in are denoted by the same reference numerals. After irradiating the insulation coated Au wire 32 from the wire spool 31 with the excimer laser at the irradiation position 1 between the clamper 33 and the capillary 35, a discharge 37 is generated between the tip portion of the Au wire 32 and the torch electrode 36. The Au ball 38 shown in FIG. 2 is produced by melting the tip portion. In this case, the excimer laser irradiation is Au
Conduct the wire intermittently, and as shown in FIG.
The coating film removed portion Ea for 38 ball production, the coating film removal portion Eb for connection with the external connection terminal 42, and the coating film removal portion Ec for Au 38 ball production are formed in this order.

【００１６】なお、Ａｕワイヤーのエキシマレーザ照射
位置は、キャピラリー取付け部からワイヤースプール取
付け部までの間が考えられるが、Ａｕワイヤーのたるみ
等が原因して被覆膜除去位置の精度が低下するのを防止
するためには、キャピラリー取付け部・クランパー３３
間とするのが最適である。また、エキシマレーザをワイ
ヤーに照射する場合、ワイヤー経路のどの位置が最適で
あるかが問題となるが、絶縁被覆ワイヤーのエキシマレ
ーザ照射範囲を、ワイヤーボンディング装置のキャピラ
リー取付け部からワイヤースプール取付け部までとする
ことにより、半導体素子電極との接続部の被覆膜除去、
および外部接続端子との接続部の被覆膜除去が１度のエ
キシマレーザ照射で可能となる。The excimer laser irradiation position of the Au wire is considered to be between the capillary mounting portion and the wire spool mounting portion, but the accuracy of the coating film removal position is lowered due to sagging of the Au wire or the like. To prevent this, the capillary mount / clamper 33
The best time is between. In addition, when irradiating a wire with an excimer laser, there is a problem of which position in the wire path is optimal. However, the excimer laser irradiation range of the insulation coated wire is from the capillary attachment part of the wire bonding device to the wire spool attachment part. By removing the coating film of the connection portion with the semiconductor element electrode,
Also, the coating film on the connection portion with the external connection terminal can be removed by one irradiation of the excimer laser.

【００１７】図３（ａ）に示すエキシマレーザ照射後の
Ａｕワイヤー３２ｂでは、Ａｕボールとその近傍部の被
覆膜、および外部接続端子４２との接続部とその近傍部
の被覆膜が除去され、図３（ｂ）に示すエキシマレーザ
照射後のＡｕワイヤー３２ｃでは、Ａｕボールおよびこ
れからかなり離れた部分までの被覆膜、ならびに外部接
続端子４２との接続部およびその近傍部の被覆膜が除去
されている。In the Au wire 32b after the excimer laser irradiation shown in FIG. 3 (a), the Au ball and the coating film in the vicinity thereof, and the connection film with the external connection terminal 42 and the coating film in the vicinity thereof are removed. In the Au wire 32c after the excimer laser irradiation shown in FIG. 3B, the Au ball and the coating film up to a portion far therefrom, and the coating film at the connection portion with the external connection terminal 42 and in the vicinity thereof. Have been removed.

【００１８】この実施の形態によれば、Ａｕワイヤー３
２の任意の位置・範囲について簡単・的確に、かつ被覆
膜の残骸をＡｕボール、またはＡｕワイヤーのエキシマ
レーザ照射部分に発生させることなく被覆膜を除去する
ことができ、半導体素子電極との接続部、および外部接
続端子との接続部の信頼性が向上する。According to this embodiment, the Au wire 3
The coating film can be removed easily and accurately in any position and range of 2 without generating the debris of the coating film on the Au ball or the excimer laser irradiation portion of the Au wire. The reliability of the connection portion of and the connection portion with the external connection terminal are improved.

【００１９】実施の形態２ 図４は、エキシマレーザ装置の要部を示す平面図であ
る。この実施の形態は、絶縁被覆Ａｕワイヤー３２の被
覆膜除去範囲を複数の平面鏡５１，…で包囲し、これら
の平面鏡５１，…にレーザ入射口２からエキシマレーザ
を照射するとともに、平面鏡５１で反射させたエキシマ
レーザを前記被覆膜除去範囲に照射することにより、１
度の照射で被覆膜除去範囲について、その全周の被覆膜
を除去するようにしたものである。Embodiment 2 FIG. 4 is a plan view showing the main part of an excimer laser device. In this embodiment, the coating film removal area of the insulating coating Au wire 32 is surrounded by a plurality of plane mirrors 51, ... And these plane mirrors 51 ,. By irradiating the coating film removal area with the reflected excimer laser, 1
The coating film on the entire circumference of the coating film removal range is removed by irradiation once.

【００２０】実施の形態３ 半導体素子は通常、アイランドと呼ばれる金属製または
有機材料よる支持体上に接着剤等で固定されるが、その
位置精度は通常±０．５ｍｍであるため、半導体素子電
極・外部接続端子間の距離がチップごとに多少異なるこ
とは避けられない。このため、ワイヤーにおける半導体
素子電極との接合点の位置、ワイヤーにおける外部接続
端子との接合点の位置が、従って上記被覆膜除去位置
が、チップごとにばらつくことになる。そこで、この実
施の形態では、半導体素子ごとの固定位置のズレを画像
認識装置により検知し、この検知データに基づいてエキ
シマレーザ照射タイミングを自動的に設定する。図５は
そのフローチャート、すなわち絶縁被覆ワイヤーの被覆
膜除去を実行するためのアルゴリズムの説明図である。Embodiment 3 A semiconductor element is usually fixed on a support made of metal or an organic material called an island with an adhesive or the like. However, since the positional accuracy is usually ± 0.5 mm, the semiconductor element electrode・ It is inevitable that the distance between the external connection terminals will vary slightly from chip to chip. For this reason, the position of the bonding point of the wire with the semiconductor element electrode, the position of the bonding point of the wire with the external connection terminal, and hence the above-described coating film removal position vary from chip to chip. Therefore, in this embodiment, the deviation of the fixed position for each semiconductor element is detected by the image recognition device, and the excimer laser irradiation timing is automatically set based on this detection data. FIG. 5 is a flowchart thereof, that is, an explanatory diagram of an algorithm for executing the removal of the coating film of the insulating coated wire.

【００２１】この実施の形態では、絶縁被覆ワイヤーの
被覆膜除去範囲を決定するに際し、画像認識装置によ
り、ワイヤーボンディング装置上の半導体素子および外
部接続端子の、所定位置からのＸ方向，Ｙ方向およびθ
方向のズレを検知するとともに、ワイヤーのループパラ
メータにより、半導体素子電極から外部接続リードまで
のワイヤー長を算出し、ワイヤーボンディングヘッドの
移動速度（ワイヤー引出し速度）により、ワイヤーの被
覆膜除去点を算出する（エキシマレーザ照射タイミング
を自動的に設定する）ものである。In this embodiment, when determining the coating film removal range of the insulating coated wire, the image recognition device uses the image recognition device to detect the semiconductor element and the external connection terminal on the wire bonding device in the X and Y directions from the predetermined position. And θ
In addition to detecting the direction deviation, the wire loop parameter calculates the wire length from the semiconductor element electrode to the external connection lead, and the wire bonding head moving speed (wire drawing speed) determines the wire coating film removal point. It is calculated (the excimer laser irradiation timing is automatically set).

【００２２】この場合、図５に示すように、実際に被覆
膜が除去された範囲および位置が最適かどうかを画像処
理装置により判定し、最適でない場合にはエキシマレー
ザ照射のタイミングを補正した後、再び被覆膜の除去操
作を行うことが好ましい。なお、図５のアルゴリズム
中、ワイヤーボンディング後の被覆膜除去位置の検査
は、半導体素子ごとに行う方法と、抜取りにより実施す
る方法が可能である。以上のとおり、図５のアルゴリズ
ムを採用することにより、接合点の被覆膜を精度良く除
去することができる。In this case, as shown in FIG. 5, the image processing apparatus determines whether the range and position where the coating film is actually removed are optimum, and if not, the excimer laser irradiation timing is corrected. After that, it is preferable to perform the operation of removing the coating film again. In the algorithm of FIG. 5, the inspection of the coating film removal position after wire bonding can be performed for each semiconductor element or can be performed by extraction. As described above, by adopting the algorithm of FIG. 5, the coating film at the junction can be removed with high accuracy.

【００２３】図６は、半導体素子４１がアイランド４３
上の所定位置に正しく固定されている状態を示す説明図
であって、（ａ）は平面図、（ｂ）は（ａ）の一部をＣ
ＣＤカメラで取り込んだ画像であり、６１はモニターテ
レビである。図７は、半導体素子４１がアイランド４３
上の所定位置からズレて固定されている状態を示す説明
図であって、（ａ）は平面図、（ｂ）は（ａ）の一部を
ＣＣＤカメラで取り込んだ画像である。図８は、図５の
アルゴリズムに従うボンディングヘッドの動きを示す斜
視図である。なお上記実施の形態では、絶縁被覆ワイヤ
ーとして絶縁被覆Ａｕワイヤーを採用したが、所望によ
りそれ以外の絶縁被覆金属ワイヤーを使用することもで
きる。In FIG. 6, the semiconductor element 41 has an island 43.
It is explanatory drawing which shows the state correctly fixed to the above predetermined position, (a) is a top view, (b) is a part of (a) C
An image captured by a CD camera, and 61 is a monitor television. In FIG. 7, the semiconductor element 41 is an island 43.
It is explanatory drawing which shows the state fixed and shifted | deviated from the above predetermined position, (a) is a top view, (b) is an image which captured a part of (a) with a CCD camera. FIG. 8 is a perspective view showing the movement of the bonding head according to the algorithm of FIG. In the above embodiment, the insulation-coated Au wire is used as the insulation-coated wire, but other insulation-coated metal wires can be used if desired.

【００２４】[0024]

【発明の効果】以上の説明で明らかなように、請求項１
の半導体素子の組立方法によれば、ワイヤーボンディン
グ用の絶縁被覆ワイヤーにおける、半導体素子電極との
接続部の被覆膜、および外部接続端子との接続部の被覆
膜の全体を的確に除去することができるので、絶縁被覆
ワイヤーと半導体素子電極、外部接続端子との接合強度
が向上し、半導体装置の信頼性が高まる。請求項２，３
の半導体素子の組立方法によれば、請求項１による被覆
膜の除去精度が著しく向上する。請求項４の半導体素子
の組立方法によれば、１度のエキシマレーザ照射で被覆
膜除去範囲について、その全周の被覆膜を除去すること
ができる。請求項５の半導体素子の組立方法によれば、
半導体素子電極との接続部の被覆膜除去、および外部接
続端子との接続部の被覆膜除去が１度のエキシマレーザ
照射で可能となる。As is apparent from the above description, claim 1
According to the method for assembling a semiconductor element, the insulating coating wire for wire bonding accurately removes the entire coating film at the connection portion with the semiconductor element electrode and the coating film at the connection portion with the external connection terminal. Therefore, the bonding strength between the insulating coated wire and the semiconductor element electrode and the external connection terminal is improved, and the reliability of the semiconductor device is increased. Claims 2 and 3
According to the method for assembling the semiconductor element, the accuracy of removing the coating film according to claim 1 is significantly improved. According to the method for assembling the semiconductor element of the fourth aspect, the coating film on the entire circumference of the coating film removal range can be removed by one-time excimer laser irradiation. According to the method of assembling the semiconductor element of claim 5,
It is possible to remove the coating film on the connection portion with the semiconductor element electrode and remove the coating film on the connection portion with the external connection terminal by one irradiation of the excimer laser.

【図面の簡単な説明】[Brief description of drawings]

【図１】本発明の実施の形態１に係るもので、Ａｕワイ
ヤーの被覆膜除去工程を示す正面図である。FIG. 1 is a front view showing a step of removing a coating film of an Au wire according to the first embodiment of the present invention.

【図２】図１の一部拡大図であって、被覆膜の一部が除
去されたＡｕワイヤーを示す正面図である。2 is a partially enlarged view of FIG. 1 and is a front view showing an Au wire from which a part of a coating film is removed.

【図３】（ａ）は、図２のＡｕワイヤーによる半導体素
子電極と外部接続端子との接続状態の一例を示す正面図
であり、（ｂ）はその別例を示す正面図である。3A is a front view showing an example of a connection state between a semiconductor element electrode and an external connection terminal by the Au wire of FIG. 2, and FIG. 3B is a front view showing another example thereof.

【図４】実施の形態２で用いたエキシマレーザ装置の要
部を示す平面図である。FIG. 4 is a plan view showing a main part of the excimer laser device used in the second embodiment.

【図５】実施の形態３において絶縁被覆ワイヤーの被覆
膜除去を実行するためのアルゴリズムの説明図である。FIG. 5 is an explanatory diagram of an algorithm for executing removal of the coating film of the insulation-coated wire in the third embodiment.

【図６】半導体素子がアイランド上の所定位置に正しく
固定されている状態を示す説明図であって、（ａ）は平
面図、（ｂ）は（ａ）の一部をＣＣＤカメラで取り込ん
だ画像である。6A and 6B are explanatory views showing a state in which a semiconductor element is correctly fixed at a predetermined position on an island, where FIG. 6A is a plan view and FIG. 6B is a part of FIG. It is an image.

【図７】半導体素子がアイランド上の所定位置からズレ
て固定されている状態を示す説明図であって、（ａ）は
平面図、（ｂ）は（ａ）の一部をＣＣＤカメラで取り込
んだ画像である。7A and 7B are explanatory views showing a state in which a semiconductor element is displaced and fixed from a predetermined position on an island, FIG. 7A is a plan view, and FIG. 7B is a part of FIG. It is an image.

【図８】図５のアルゴリズムに従うボンディングヘッド
の動きを示す斜視図である。8 is a perspective view showing the movement of the bonding head according to the algorithm of FIG.

【図９】従来のワイヤーボンディングにおいて、樹脂封
止により発生するワイヤーショートの状態を示す平面図
である。FIG. 9 is a plan view showing a state of a wire short circuit caused by resin sealing in conventional wire bonding.

【図１０】従来法により絶縁被覆ワイヤーの先端部にＡ
ｕボールを作製する要領を示す正面図である。FIG. 10: A is attached to the tip of the insulation-coated wire by the conventional method.
It is a front view which shows the point which produces a u ball.

【図１１】図１０の要領により作製されたＡｕボールの
状態を示す正面図である。11 is a front view showing a state of the Au ball manufactured according to the procedure of FIG.

【図１２】図１１の絶縁被覆ワイヤーによる半導体素子
と外部接続端子との接続状態を示す正面図である。12 is a front view showing a connection state between a semiconductor element and an external connection terminal by the insulating coated wire of FIG.

【符号の説明】[Explanation of symbols]

１ 照射位置 ２ レーザ入射口 ２１ 半導体素子 ２２ ワイヤーショート箇所 ２３ 外部接続リード ２４ アイランド ２５ ワイヤー ３１ ワイヤースプール ３２ （絶縁被覆）Ａｕワイヤー ３２ａ 被覆膜の残骸 ３２ｂ，３２ｃ Ａｕワイヤー（エキシマレーザ照射
後） ３３ クランパー ３４ 超音波ホーン ３５ キャピラリー ３６ トーチ電極 ３７ 放電 ３８ Ａｕボール ３９ ＣＣＤカメラ ４１ 半導体素子 ４２ 外部接続端子 ４３ アイランド ５１ 平面鏡 ６１ モニターテレビ Ｅａ，Ｅｂ，Ｅｃ 被覆膜除去部分1 Irradiation Position 2 Laser Inlet 21 Semiconductor Element 22 Wire Short Point 23 External Connection Lead 24 Island 25 Wire 31 Wire Spool 32 (Insulation Coating) Au Wire 32a Remaining Coating Film 32b, 32c Au Wire (After Excimer Laser Irradiation) 33 Clamper 34 Ultrasonic horn 35 Capillary 36 Torch electrode 37 Discharge 38 Au ball 39 CCD camera 41 Semiconductor element 42 External connection terminal 43 Island 51 Plane mirror 61 Monitor TV Ea, Eb, Ec Coating film removal part

Claims (5)

【特許請求の範囲】[Claims] 【請求項１】 アイランド上に半導体素子を実装し、半
導体素子に電極を、アイランドの外周に外部との接続用
の端子をそれぞれ設け、前記半導体素子電極と前記外部
接続端子との間を、絶縁被覆ワイヤーを使用してワイヤ
ーボンディングにより接続する方法において、ワイヤー
ボンディングを行う前に、前記絶縁被覆ワイヤーにおけ
る前記半導体素子電極との接続部の被覆膜、および前記
外部接続端子との接続部の被覆膜を、エキシマレーザ照
射により除去することを特徴とする半導体素子の組立方
法。1. A semiconductor element is mounted on an island, an electrode is provided on the semiconductor element, and terminals for external connection are provided on the outer periphery of the island, respectively, and insulation is provided between the semiconductor element electrode and the external connection terminal. In the method of connecting by wire bonding using a coated wire, before performing wire bonding, a coating film of a connection portion of the insulating coated wire with the semiconductor element electrode, and a coating of a connection portion with the external connection terminal. A method of assembling a semiconductor device, wherein the covering film is removed by irradiation with an excimer laser. 【請求項２】 前記絶縁被覆ワイヤーの被覆膜除去範囲
を決定するに際し、画像認識装置によりワイヤーボンデ
ィング装置上の半導体素子および外部接続端子の、所定
位置からのＸ方向，Ｙ方向およびθ方向のズレを検知す
るとともに、ワイヤーのループパラメータにより半導体
素子電極から外部接続リードまでのワイヤー長を算出
し、ワイヤーボンディングヘッドの移動速度によりエキ
シマレーザ照射のタイミングを自動的に設定することを
特徴とする請求項１に記載の半導体素子の組立方法。2. When determining the coating film removal range of the insulation coated wire, the image recognition device detects the X direction, Y direction and θ direction of the semiconductor element and the external connection terminal on the wire bonding device from a predetermined position. Along with detecting the deviation, the wire length from the semiconductor element electrode to the external connection lead is calculated by the loop parameter of the wire, and the excimer laser irradiation timing is automatically set by the moving speed of the wire bonding head. Item 2. A method of assembling a semiconductor device according to item 1. 【請求項３】 実際に被覆膜が除去された範囲および位
置が最適かどうかを画像処理装置により判定し、最適で
ない場合にはエキシマレーザ照射のタイミングを補正し
た後、再び被覆膜の除去操作を行うことを特徴とする請
求項２に記載の半導体素子の組立方法。3. An image processing apparatus determines whether or not the range and position where the coating film is actually removed is optimum, and if not, the excimer laser irradiation timing is corrected, and then the coating film is removed again. The method for assembling a semiconductor device according to claim 2, wherein an operation is performed. 【請求項４】 前記絶縁被覆ワイヤーの被覆膜除去範囲
を反射ミラーで包囲し、該反射ミラーにエキシマレーザ
を照射するとともに、前記反射ミラーで反射させたエキ
シマレーザを前記被覆膜除去範囲に照射することによ
り、該被覆膜除去範囲について、その全周の被覆膜を除
去することを特徴とする請求項１，２または３に記載の
半導体素子の組立方法。4. The coating film removal range of the insulating coated wire is surrounded by a reflection mirror, the excimer laser is irradiated to the reflection mirror, and the excimer laser reflected by the reflection mirror is covered by the coating film removal range. 4. The method for assembling a semiconductor device according to claim 1, wherein the coating film on the entire periphery of the coating film removal area is removed by irradiation. 【請求項５】 前記絶縁被覆ワイヤーのエキシマレーザ
照射範囲は、ワイヤーボンディング装置のキャピラリー
取付け部からワイヤースプール取付け部までとすること
を特徴とする請求項１，２，３または４に記載の半導体
素子の組立方法。5. The semiconductor element according to claim 1, 2, 3 or 4, wherein an excimer laser irradiation range of the insulating coated wire is from a capillary mounting portion to a wire spool mounting portion of a wire bonding device. Assembly method.
JP7243995A 1995-08-10 1995-08-10 Method for assembling semiconductor element Pending JPH0955395A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7243995A JPH0955395A (en) 1995-08-10 1995-08-10 Method for assembling semiconductor element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7243995A JPH0955395A (en) 1995-08-10 1995-08-10 Method for assembling semiconductor element

Publications (1)

Publication Number Publication Date
JPH0955395A true JPH0955395A (en) 1997-02-25

Family

ID=17112157

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7243995A Pending JPH0955395A (en) 1995-08-10 1995-08-10 Method for assembling semiconductor element

Country Status (1)

Country Link
JP (1) JPH0955395A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6239376B1 (en) 1997-10-16 2001-05-29 Nec Corporation Coated fine metallic wire and method for fabricating semiconductor device using same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6239376B1 (en) 1997-10-16 2001-05-29 Nec Corporation Coated fine metallic wire and method for fabricating semiconductor device using same
US6640436B1 (en) 1997-10-16 2003-11-04 Nec Electronics Corporation Method of fabricating a coated metallic wire, method of removing insulation from the coated metallic wire and method of fabricating a semiconductor device with the wire

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