JPH0946156A - Surface acoustic wave element and its manufacture - Google Patents
Surface acoustic wave element and its manufactureInfo
- Publication number
- JPH0946156A JPH0946156A JP21409595A JP21409595A JPH0946156A JP H0946156 A JPH0946156 A JP H0946156A JP 21409595 A JP21409595 A JP 21409595A JP 21409595 A JP21409595 A JP 21409595A JP H0946156 A JPH0946156 A JP H0946156A
- Authority
- JP
- Japan
- Prior art keywords
- acoustic wave
- surface acoustic
- sio
- wave element
- protective film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000010897 surface acoustic wave method Methods 0.000 title claims abstract description 68
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 10
- 239000000758 substrate Substances 0.000 claims abstract description 29
- 238000000034 method Methods 0.000 claims abstract description 27
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 22
- 239000010453 quartz Substances 0.000 claims abstract description 14
- 238000007740 vapor deposition Methods 0.000 claims abstract description 14
- 238000010894 electron beam technology Methods 0.000 claims abstract description 11
- 238000000206 photolithography Methods 0.000 claims abstract description 6
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 49
- 230000001681 protective effect Effects 0.000 claims description 47
- 239000007787 solid Substances 0.000 claims description 13
- 238000005520 cutting process Methods 0.000 claims 1
- 238000012544 monitoring process Methods 0.000 claims 1
- 230000008569 process Effects 0.000 abstract description 20
- 238000000151 deposition Methods 0.000 abstract description 7
- 230000007246 mechanism Effects 0.000 abstract description 7
- 238000005516 engineering process Methods 0.000 abstract description 3
- 235000012239 silicon dioxide Nutrition 0.000 abstract 5
- 229910052681 coesite Inorganic materials 0.000 abstract 4
- 229910052906 cristobalite Inorganic materials 0.000 abstract 4
- 239000000377 silicon dioxide Substances 0.000 abstract 4
- 229910052682 stishovite Inorganic materials 0.000 abstract 4
- 229910052905 tridymite Inorganic materials 0.000 abstract 4
- 230000005855 radiation Effects 0.000 abstract 1
- 230000015572 biosynthetic process Effects 0.000 description 10
- 238000001312 dry etching Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 3
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 230000032683 aging Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000005019 vapor deposition process Methods 0.000 description 1
Landscapes
- Formation Of Insulating Films (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】弾性表面波素子の周波数調整とＳ
ｉＯ2保護膜形成に関する。[Industrial application] Frequency adjustment of surface acoustic wave devices and S
Regarding formation of an iO 2 protective film.
【０００２】[0002]
【従来の技術】従来技術では、圧電基板上に櫛形電極と
反射器から構成される弾性表面波素子を、圧電基板ウエ
ハの状態でＳｉＯ2を蒸着し弾性表面波素子の電極保護
膜を形成していた。また、周波数調整においても圧電基
板ウエハ単位でおおよその調整を行った後、特性仕様に
応じて圧電基板ウエハから弾性表面波素子を個々に切り
離した段階で細かな周波数調整を行っていた。2. Description of the Related Art In the prior art, a surface acoustic wave element composed of a comb-shaped electrode and a reflector is formed on a piezoelectric substrate, and SiO 2 is vapor-deposited in the state of a piezoelectric substrate wafer to form an electrode protective film for the surface acoustic wave element. Was there. Further, also in frequency adjustment, after roughly adjusting each piezoelectric substrate wafer, fine frequency adjustment is performed at the stage where the surface acoustic wave element is individually separated from the piezoelectric substrate wafer according to the characteristic specifications.
【０００３】[0003]
【発明が解決しようとする課題】しかし、圧電基板ウエ
ハの状態でＳｉＯ2保護膜処理を施すと、その後の製造
工程における弾性表面波素子内のワイヤーボンディング
接続部分は、ＳｉＯ2保護膜のために、ワイヤーボンデ
ィング処理ができなくなってしまう不具合が生じること
から、ワイヤーボンデイング部分はＳｉＯ2保護膜を行
わないマスキングなどの工夫と手間が掛かってしまう。
一方、周波数調整においては、圧電基板ウエハの状態で
おおよその周波数調整を、ドライエッチング加工を用い
てバッチ処理することで、周波数調整と周波数測定とが
リアルタイムに行うことが困難で高価であった。また、
ＳｉＯ2保護膜の形成と周波数調整をそれぞれ別の工程
で行う必要があり、多くの工程と時間と手間が必要なの
が現状であった。However, when the SiO 2 protective film is processed in the state of the piezoelectric substrate wafer, the wire bonding connection portion in the surface acoustic wave element in the subsequent manufacturing process is affected by the SiO 2 protective film. Since the wire bonding process cannot be performed, the wire bonding portion requires some work such as masking without a SiO 2 protective film.
On the other hand, in the frequency adjustment, it is difficult and expensive to perform the frequency adjustment and the frequency measurement in real time by batch-processing the frequency adjustment in the state of the piezoelectric substrate wafer using the dry etching process. Also,
At present, it is necessary to perform the formation of the SiO 2 protective film and the frequency adjustment in separate steps, which requires many steps, time and labor.
【０００４】[0004]
【課題を解決するための手段】固形石英ブロックに電子
ビームを照射させてＳｉＯ2を蒸着することで、弾性表
面波素子の少なくとも電極部にＳｉＯ2保護膜を均一に
蒸着することができる。弾性表面波素子を個々に切り離
した段階で、個々に切り離された弾性表面波素子の少な
くとも電極部にＳｉＯ2保護膜を施すことにより、弾性
表面波素子全面の電極保護膜を形成することができる。
また、電極保護膜を形成すると同時に弾性表面波素子を
リアルタイムで周波数調整が行うことができる。Is irradiated with an electron beam in a solid quartz block SUMMARY OF THE INVENTION are deposited by evaporation SiO 2, it can be uniformly deposited SiO 2 protective film on at least the electrode portions of the surface acoustic wave device. At the stage where the surface acoustic wave elements are individually cut off, an SiO 2 protective film is applied to at least the electrode portions of the individual surface acoustic wave elements to form an electrode protective film on the entire surface of the surface acoustic wave element. .
Further, the frequency of the surface acoustic wave element can be adjusted in real time at the same time when the electrode protective film is formed.
【０００５】[0005]
【背景】ＳｉＯ2によるＳｉＯ2保護膜は、弾性表面波素
子を構成する櫛形電極部分の交差指での異質物による電
極間ショート等を保護する保護膜として施されるが、そ
の保護膜処理には全体的な保護膜厚みなど良質なＳｉＯ
2保護膜が要求される。また、このＳｉＯ2保護膜形成は
作業性の難易性の問題から圧電基板ウエハの段階でバッ
チ処理されている。しかし、圧電基板ウエハの段階でＳ
ｉＯ2保護膜形成処理を行うことで、組立工程における
ワイヤーボンディング接続箇所を除いてＳｉＯ2保護膜
形成を行わなければならないという工夫と手間が必要に
なる。[Background] A SiO 2 protective film made of SiO 2 is applied as a protective film for protecting a short circuit between electrodes due to a foreign substance at a crossing finger of a comb-shaped electrode portion constituting a surface acoustic wave element. Is a high quality SiO such as overall protective film thickness
2 Protective film required. The formation of the SiO 2 protective film is batch-processed at the stage of the piezoelectric substrate wafer because of the difficulty of workability. However, at the piezoelectric substrate wafer stage, S
By carrying out the iO 2 protective film forming process, it is necessary to devise and labor for forming the SiO 2 protective film except the wire bonding connection portion in the assembly process.
【０００７】そこで本発明では、従来では圧電基板ウエ
ハの状態でバッチ処理していたＳｉＯ2保護膜形成を、
ＳｉＯ2保護膜形成のための蒸着方法を変えることによ
り、圧電基板ウエハの状態から個々の弾性表面波素子に
切り離した状態で、容器に組み込んだ体裁の弾性表面波
素子の少なくとも電極部（櫛形電極、反射器電極）にＳ
ｉＯ2保護膜を蒸着することにより工程の改善を行うも
のである。Therefore, in the present invention, the formation of the SiO 2 protective film, which was conventionally batch processed in the state of the piezoelectric substrate wafer,
By changing the vapor deposition method for forming the SiO 2 protective film, at least the electrode portion (comb-shaped electrode) of the surface acoustic wave element of the form incorporated in the container is separated from the state of the piezoelectric substrate wafer into individual surface acoustic wave elements. , S on the reflector electrode)
The process is improved by depositing an iO 2 protective film.
【０００８】本発明で用いる蒸着手法は、回転するルツ
ボに固形の石英ブロックを供給し、その固形石英ブロッ
クに電子ビームを照射することにより、はじき飛ばされ
たＳｉＯ2によって弾性表面波素子のＳｉＯ2保護膜加工
が行われる。従来の蒸着方法では、ルツボに供給される
蒸着源が経時変化と共に蒸着源の組成が変化してしまう
が、本発明の手法では、蒸着源の経時変化による組成変
化が殆どなく、必要な時に必要な量だけを蒸着すること
ができることから、蒸着されたＳｉＯ2保護膜が極めて
良質であるという利点がある。[0008] deposition method used in the present invention is to provide a quartz block solid in a crucible which rotates, by irradiating an electron beam on the solid quartz block, SiO 2 protection of the surface acoustic wave element by SiO 2 was flicked Membrane processing is performed. In the conventional vapor deposition method, the composition of the vapor deposition source supplied to the crucible changes with the lapse of time, but in the method of the present invention, there is almost no composition change due to the aging of the vapor deposition source. Since only a large amount can be vapor-deposited, there is an advantage that the vapor-deposited SiO 2 protective film has extremely high quality.
【０００９】一方、周波数調整においても一般的には圧
電基板ウエハ単位のドライエッチングでバッチ処理が行
われていた。しかし、圧電基板ウエハ単位で周波数調整
を行うと、圧電基板ウエハの中心部分と端部での周波数
調整のバラツキが発生したり、例えば中間周波フィルタ
等、弾性表面波素子の仕様の厳しい製品では、圧電基板
ウエハから個々の弾性表面波素子に切り離し容器に組立
た後、改めて個々にドライエッチングと周波数測定を繰
り返した周波数調整を行うといった工程が必要不可欠で
もあった。周波数調整においても、既に記述したＳｉＯ
2保護膜形成と兼ね合わせることで、大変安易な方法で
リアルタイムに周波数調整が行えるよう改善が図れた。On the other hand, also in frequency adjustment, generally, batch processing is performed by dry etching for each piezoelectric substrate wafer. However, if frequency adjustment is performed for each piezoelectric substrate wafer, variations in frequency adjustment occur at the central portion and the end portion of the piezoelectric substrate wafer, or for products with strict specifications for surface acoustic wave devices such as intermediate frequency filters, It was also indispensable to separate the individual surface acoustic wave elements from the piezoelectric substrate wafer, assemble them into a container, and then individually perform frequency adjustment by repeating dry etching and frequency measurement individually. Even in frequency adjustment, the already described SiO
2 By combining this with the formation of a protective film, we were able to improve the frequency adjustment in real time by a very easy method.
【００１０】[0010]
【実施例】以下、添付図面に従ってこの発明の実施例を
説明する。なお、各図において同一の符号は同様の対象
を示すものとする。 （弾性表面波素子）図１に本発明の平面図を示す。圧電
基板１上に第１の横結合弾性表面波素子２０と第２の横
結合弾性表面波素子２１を縦続接続して構成される弾性
表面波素子２の表面に、蒸着源である固形石英ブロック
５に電子ガン３４から発射した電子ビーム６を照射させ
て、はじき飛ばされたＳｉＯ2３０を弾性表面波素子２
の少なくとも電極部に均一に蒸着し、ＳｉＯ2保護膜３
を形成する。ＳｉＯ2膜３は弾性表面波素子２の表面に
蒸着することにより、弾性表面波素子２を構成する電極
部７を保護することができる。Embodiments of the present invention will be described below with reference to the accompanying drawings. In each drawing, the same reference numeral indicates the same object. (Surface Acoustic Wave Element) FIG. 1 shows a plan view of the present invention. On the surface of the surface acoustic wave element 2 formed by cascading the first laterally coupled surface acoustic wave element 20 and the second laterally coupled surface acoustic wave element 21 on the piezoelectric substrate 1, a solid quartz block as a vapor deposition source is formed. 5 is irradiated with the electron beam 6 emitted from the electron gun 34, and the SiO 2 30 that has been flung away is removed by the surface acoustic wave element 2
SiO 2 protective film 3
To form By depositing the SiO 2 film 3 on the surface of the surface acoustic wave element 2, the electrode portion 7 forming the surface acoustic wave element 2 can be protected.
【００１１】また、弾性表面波素子２の表面の少なくと
も電極部にＳｉＯ2保護膜３を蒸着する際、ＳｉＯ2保護
３膜蒸着量をリアルタイムに周波数カウンタで計測する
ことにより、弾性表面波素子２の周波数調整も同時に、
かつ容易に行うことができる。When depositing the SiO 2 protective film 3 on at least the electrode portion of the surface of the surface acoustic wave device 2, the deposition amount of the SiO 2 protective 3 film is measured by a frequency counter in real time, so that the surface acoustic wave device 2 is obtained. The frequency adjustment of
And can be easily performed.
【００１２】図４に弾性表面波素子２を製造する従来の
工程の一例と、本発明の工程の一例を表示した工程図を
示す。従来の工程では、工程図にもある通り「５．Ｓｉ
Ｏ2成膜」→「６．フォトリソ（パターン化）」→
「７．プロービング」→「８．ｆ調ドライエッチ」と、
圧電基板ウエハ４の状態でＳｉＯ2保護膜３を形成し、
ドライエッチングで周波数調整を行っていた。FIG. 4 shows an example of a conventional process for manufacturing the surface acoustic wave element 2 and a process diagram showing an example of the process of the present invention. In the conventional process, "5.Si.
O 2 film formation ”→“ 6. Photolithography (patterning) ”→
"7. Probing" → "8.f dry etching"
The SiO 2 protective film 3 is formed on the piezoelectric substrate wafer 4,
The frequency was adjusted by dry etching.
【００１３】しかし、従来のこの方法では既に背景で記
述しているように、「１１．ワイヤーボンディング（Ｗ
／Ｂ）」の工程でボンディングする箇所はＳｉＯ2保護
膜３を事前に蒸着することができないため、図２に示す
圧電基板ウエハ４の平面図と、圧電基板ウエハ４上にフ
ォトリソ技術で加工された弾性表面波素子２の部分拡大
図に示すようにボンディング箇所を除いてＳｉＯ2保護
膜３をつけなければならない工程が必要になってしま
う。However, in this conventional method, as described in the background, "11. Wire bonding (W
/ B) ”, the SiO 2 protective film 3 cannot be vapor-deposited in advance at the portion to be bonded. Therefore, the plan view of the piezoelectric substrate wafer 4 shown in FIG. 2 and the piezoelectric substrate wafer 4 are processed by photolithography technology. Also, as shown in a partially enlarged view of the surface acoustic wave element 2, a step of attaching the SiO 2 protective film 3 except for the bonding portion is required.
【００１４】本発明により、図４の「本発明の工程」図
で示すとおり、従来の工程の「５．ＳｉＯ2成膜」→
「６．フォトリソ（パターン化）」→までの全ての工程
を削除することができた。According to the present invention, as shown in the "process of the present invention" of FIG. 4, the conventional process "5. SiO 2 film formation" →
It was possible to delete all the steps up to "6. Photolithography (patterning)".
【００１５】従来では圧電基板ウエハ４の状態の弾性表
面波素子２で処理していた工程を、個々に切り離した弾
性表面波素子２で処理加工することができる。本発明の
工程に示す様に「７．ワイヤーボンディング（Ｗ／
Ｂ）」までの工程で組立られた弾性表面波素子２を個々
に「８．個別ｆ調＋ＳｉＯ2保護膜成膜（形成）」する
ことができる。なお、個別周波数調整については、Ｓｉ
Ｏ2保護膜３の膜厚を周波数に置き換えてリアルタイム
に管理することによって、弾性表面波素子の周波数調整
も行うことができる。The process which has been conventionally performed by the surface acoustic wave element 2 in the state of the piezoelectric substrate wafer 4 can be processed by the surface acoustic wave element 2 which is individually separated. As shown in the process of the present invention, "7. Wire bonding (W /
The surface acoustic wave elements 2 assembled in the steps up to B) can be individually “8. Individual f-tone + SiO 2 protective film formation (formation)”. For individual frequency adjustment, refer to Si
By replacing the thickness of the O 2 protective film 3 with the frequency and managing it in real time, the frequency of the surface acoustic wave element can be adjusted.
【００１６】なお、弾性表面波素子の表面に蒸着するＳ
ｉＯ2保護膜は、弾性表面波素子全体にＳｉＯ2保護膜を
蒸着しても良いが、弾性表面波素子の少なくとも電極部
にＳｉＯ2保護膜を蒸着しても同一の効果が得られるも
のである。Incidentally, S deposited on the surface of the surface acoustic wave element is deposited.
iO 2 protective film is on the entire surface acoustic wave element may be deposited SiO 2 protective film, even by depositing a SiO 2 protective film on at least the electrode portions of the surface acoustic wave device in which the same effect can be obtained is there.
【００１７】（弾性表面波素子の製造方法）図３は本発
明の製造方法の一例を示す概略図である。一般的に圧電
振動子等に電極を構成するために用いられる蒸着機の原
理に準じた蒸着方法ではあるが、蒸着ルツボ３３に回転
機構を有する固形の石英ブロック５を格納し、電子ガン
３４から発射した電子ビーム６を照射して、はじき飛ば
されたＳｉＯ2３０によってＳｉＯ2保護膜３を形成する
ことに特徴がある。なお、蒸着処理は高真空の雰囲気中
で処理される。(Manufacturing Method of Surface Acoustic Wave Element) FIG. 3 is a schematic view showing an example of the manufacturing method of the present invention. Generally, the vapor deposition method is based on the principle of a vapor deposition machine used for forming electrodes on a piezoelectric vibrator or the like. However, the solid quartz block 5 having a rotation mechanism is stored in the vapor deposition crucible 33, and the electron gun 34 is used. It is characterized in that the emitted electron beam 6 is irradiated and the SiO 2 protective film 3 is formed by the SiO 2 30 that is repelled. The vapor deposition process is performed in a high vacuum atmosphere.
【００１８】圧電基板ウエハ４上にフォトリソ技術を用
いて形成された弾性表面波素子２を、図４に示す「本発
明の工程」の「７．ワイヤーボンディング（Ｗ／Ｂ）」
までの製造工程により個々に容器３５に組み込まれた弾
性表面波素子２を、蒸着治具３１に弾性表面波素子２の
表面を下方に向けて置き、弾性表面波素子２の表面（Ｓ
ｉＯ2保護膜３形成面）に向かって下方よりＳｉＯ2３０
を蒸着する。なお、ＳｉＯ2３０が蒸着される弾性表面
波素子２のすぐ下には、弾性表面波素子２の表面の少な
くとも電極部にＳｉＯ2３０が蒸着されるようマスク３
２が配置されている。The surface acoustic wave element 2 formed on the piezoelectric substrate wafer 4 by the photolithography technique is shown in FIG. 4 as "7. Wire bonding (W / B)" in "Process of the present invention".
The surface acoustic wave elements 2 individually incorporated in the container 35 by the above manufacturing steps are placed on the evaporation jig 31 with the surface of the surface acoustic wave elements 2 facing downward, and the surface of the surface acoustic wave elements 2 (S
SiO 2 30 from below toward the iO 2 protective film 3 formation surface)
Is deposited. Note that just below the surface acoustic wave element 2 SiO 2 30 is deposited, the mask so that SiO 2 30 is deposited on at least the electrode portions of the surface of the surface acoustic wave element 2 3
2 are arranged.
【００１９】ＳｉＯ2保護膜３は、回転機構を有するル
ツボ３３に、固形の石英ブロック５を格納し、固形の石
英ブロック５に向けて放射された電子ガン３４から発射
した電子ビーム６によってはじき飛んだＳｉＯ2３０に
よって形成される。The SiO 2 protective film 3 has a solid quartz block 5 stored in a crucible 33 having a rotating mechanism, and is repelled by an electron beam 6 emitted from an electron gun 34 emitted toward the solid quartz block 5. It is formed of SiO 2 30.
【００２０】電子ガン３４から発射した電子ビーム６の
照射される固形石英ブロック５面は、回転機構を有する
ルツボ３３の回転機構によって、絶えず新鮮な面が提供
されている。The surface of the solid quartz block 5 irradiated with the electron beam 6 emitted from the electron gun 34 is constantly provided with a fresh surface by the rotation mechanism of the crucible 33 having a rotation mechanism.
【００２１】一方、固形石英ブロック５を格納するルツ
ボ３３と電子ビーム６の発生源である電子ガン３４は大
変高温になるために、弾性表面波素子２のＳｉＯ2保護
膜３形成および、ＳｉＯ2保護膜３面による周波数調整
の熱に対する影響を考慮する上で、弾性表面波素子２と
の距離を５０ｃｍ程度離した機構となっている。固形石
英ブロック５を格納するルツボ３３と弾性表面波素子２
とが十分距離があることで、弾性表面波素子２すぐ下に
位置するマスク３２でのＳｉＯ2３０の入射は、弾性表
面波素子２の蒸着面に対しほぼ垂直に蒸着することが可
能である。On the other hand, since the crucible 33 that stores the solid quartz block 5 and the electron gun 34 that is the source of the electron beam 6 become extremely high in temperature, the SiO 2 protective film 3 of the surface acoustic wave element 2 is formed, and the SiO 2 film. Considering the influence of the frequency adjustment by the surface of the protective film 3 on heat, the mechanism is such that the distance from the surface acoustic wave element 2 is about 50 cm. Crucible 33 for storing solid quartz block 5 and surface acoustic wave element 2
Since there is a sufficient distance between the surface acoustic wave device 2 and the mask 32 located immediately below the surface acoustic wave device 2, the SiO 2 30 can be deposited almost perpendicularly to the surface of the surface acoustic wave device 2. .
【００２２】固形石英ブロック５に電子ビーム６を照射
し、はじき飛ばされたＳｉＯ2３０の粒子にＯ2が不足し
ている場合には、図には記載していないが、蒸着機自体
に別途Ｏ2供給ができる様なＯ2供給口を備えた機構とな
っている。When the solid quartz block 5 is irradiated with the electron beam 6 and the particles of the SiO 2 30 that have been repelled are deficient in O 2 , although not shown in the drawing, a separate O 2 is added to the vapor deposition machine itself. The mechanism is equipped with an O 2 supply port that can supply 2 charges.
【００２３】弾性表面波素子２を保持する蒸着治具３１
構造は、ターレット方式でも、インライン方式の蒸着機
でも応用することができる。A vapor deposition jig 31 for holding the surface acoustic wave element 2.
The structure can be applied to either a turret type or an in-line type vapor deposition machine.
【００２４】[0024]
【発明の効果】本発明により、弾性表面波素子を圧電基
板ウエハの状態から個々に切り離して、ＳｉＯ2保護膜
形成、周波数調整を行うことができることで、特性仕様
の厳しい弾性表面波素子の製造対応にも、工程の大幅な
削減、品質、精度の安定化、歩留まりの改善を図ること
ができた。According to the present invention, since the surface acoustic wave element can be individually separated from the state of the piezoelectric substrate wafer to form the SiO 2 protective film and adjust the frequency, it is possible to manufacture the surface acoustic wave element having strict characteristic specifications. In response, we were able to significantly reduce the number of processes, stabilize quality and accuracy, and improve yield.
【図１】本発明の弾性表面波素子の平面図を示した図で
ある。FIG. 1 is a diagram showing a plan view of a surface acoustic wave device of the present invention.
【図２】圧電基板ウエハの平面図と圧電基板ウエハ上に
構成される弾性表面波素子の部分拡大図である。FIG. 2 is a plan view of a piezoelectric substrate wafer and a partially enlarged view of a surface acoustic wave element formed on the piezoelectric substrate wafer.
【図３】本発明の製造方法の一例を示す概略図である。FIG. 3 is a schematic view showing an example of a manufacturing method of the present invention.
【図４】従来の工程の一例と、本発明の工程の一例を示
した工程図である。FIG. 4 is a process diagram showing an example of a conventional process and an example of the process of the present invention.
１ 圧電基板 ２ 弾性表面波素子 ３ ＳｉＯ2保護膜 ４ 圧電基板ウエハ ５ 固形石英ブロック ６ 電子ビーム ７ 電極部1 piezoelectric substrate 2 surface acoustic wave element 3 SiO 2 protective film 4 piezoelectric substrate wafer 5 solid quartz block 6 electron beam 7 electrode part
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.6 識別記号 庁内整理番号 ＦＩ 技術表示箇所 Ｈ０１Ｌ 41/22 7259−5Ｊ Ｈ０３Ｈ 9/25 Ｈ０３Ｈ 9/145 7259−5Ｊ 9/64 9/25 Ｈ０１Ｌ 41/08 Ｃ 9/64 41/22 Ｚ ─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. 6 Identification code Internal reference number FI Technical indication H01L 41/22 7259-5J H03H 9/25 H03H 9/145 7259-5J 9/64 9/25 H01L 41/08 C 9/64 41/22 Z
Claims (3)
表面にＳｉＯ2保護膜を形成する弾性表面波素子におい
て、 蒸着ルツボの固形石英ブロックに電子ビームを照射し、
ＳｉＯ2保護膜を弾性表面波素子の表面に蒸着すること
により所定の周波数に合わせ、かつ弾性表面波素子の少
なくとも電極部にＳｉＯ2保護膜が形成されていること
を特徴とする弾性表面波素子。1. A surface acoustic wave device comprising a surface acoustic wave device formed on a piezoelectric substrate and having a SiO 2 protective film formed on the surface thereof, wherein a solid quartz block of a vapor deposition crucible is irradiated with an electron beam.
A surface acoustic wave device characterized in that a SiO 2 protective film is vapor-deposited on the surface of the surface acoustic wave device so as to match a predetermined frequency, and the SiO 2 protective film is formed on at least an electrode portion of the surface acoustic wave device. .
することにより、リアルタイムに周波数調整を行うこと
を特徴とする特許請求の範囲第１項記載の弾性表面波素
子。2. The surface acoustic wave device according to claim 1, wherein frequency adjustment is performed in real time by adjusting the thickness of the SiO 2 protective film deposited on the protective film.
いて形成された弾性表面波素子のＳｉＯ2保護膜を形成
する弾性表面波素子に、電極を形成する工程と、該圧電
基板ウエハから弾性表面波素子を個々に切断する工程
と、容器にダイスボンディングしワイヤーボンディング
する工程と、該電極上にＳｉＯ2保護膜を周波数を監視
しながら形成する工程から成る弾性表面波素子の製造方
法。3. A step of forming an electrode on a surface acoustic wave element for forming a SiO 2 protective film of a surface acoustic wave element formed by a photolithography technique on a piezoelectric substrate wafer, and an elastic step from the piezoelectric substrate wafer. 1. A method of manufacturing a surface acoustic wave element, comprising the steps of individually cutting the surface acoustic wave element, dice-bonding to a container and wire-bonding, and forming a SiO 2 protective film on the electrode while monitoring the frequency.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21409595A JPH0946156A (en) | 1995-07-31 | 1995-07-31 | Surface acoustic wave element and its manufacture |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21409595A JPH0946156A (en) | 1995-07-31 | 1995-07-31 | Surface acoustic wave element and its manufacture |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0946156A true JPH0946156A (en) | 1997-02-14 |
Family
ID=16650149
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP21409595A Pending JPH0946156A (en) | 1995-07-31 | 1995-07-31 | Surface acoustic wave element and its manufacture |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0946156A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002217672A (en) * | 2001-01-12 | 2002-08-02 | Murata Mfg Co Ltd | Surface acoustic wave device and communication equipment using the same |
| WO2005069486A1 (en) * | 2004-01-19 | 2005-07-28 | Murata Manufacturing Co., Ltd. | Acoustic boundary wave device |
| JP2011528878A (en) * | 2008-07-23 | 2011-11-24 | エムエスゲー リトグラス アクチエンゲゼルシャフト | Method for forming dielectric layer on electroacoustic component and electroacoustic component |
| US10954591B2 (en) | 2009-07-23 | 2021-03-23 | Msg Lithoglas Ag | Method for producing a structured coating on a substrate, coated substrate, and semi-finished product having a coated substrate |
-
1995
- 1995-07-31 JP JP21409595A patent/JPH0946156A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002217672A (en) * | 2001-01-12 | 2002-08-02 | Murata Mfg Co Ltd | Surface acoustic wave device and communication equipment using the same |
| WO2005069486A1 (en) * | 2004-01-19 | 2005-07-28 | Murata Manufacturing Co., Ltd. | Acoustic boundary wave device |
| KR100850861B1 (en) * | 2004-01-19 | 2008-08-06 | 가부시키가이샤 무라타 세이사쿠쇼 | Acoustic boundary wave device |
| US7486001B2 (en) | 2004-01-19 | 2009-02-03 | Murata Manufacturing Co., Ltd. | Boundary acoustic wave device |
| JP2011528878A (en) * | 2008-07-23 | 2011-11-24 | エムエスゲー リトグラス アクチエンゲゼルシャフト | Method for forming dielectric layer on electroacoustic component and electroacoustic component |
| US8659206B2 (en) | 2008-07-23 | 2014-02-25 | Msg Lithoglas Ag | Method for producing a dielectric layer in an electroacoustic component, and electroacoustic component |
| US10954591B2 (en) | 2009-07-23 | 2021-03-23 | Msg Lithoglas Ag | Method for producing a structured coating on a substrate, coated substrate, and semi-finished product having a coated substrate |
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