JPH0945975A - Semiconductor magnetic sensor - Google Patents
Semiconductor magnetic sensorInfo
- Publication number
- JPH0945975A JPH0945975A JP7198527A JP19852795A JPH0945975A JP H0945975 A JPH0945975 A JP H0945975A JP 7198527 A JP7198527 A JP 7198527A JP 19852795 A JP19852795 A JP 19852795A JP H0945975 A JPH0945975 A JP H0945975A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor
- magnetic sensor
- electrode
- film
- electrode portion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 71
- 230000001681 protective effect Effects 0.000 claims abstract description 35
- 239000000758 substrate Substances 0.000 claims abstract description 24
- 239000004642 Polyimide Substances 0.000 claims description 9
- 229920001721 polyimide Polymers 0.000 claims description 9
- 229910052804 chromium Inorganic materials 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 5
- 238000007747 plating Methods 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 2
- 239000000956 alloy Substances 0.000 claims 1
- 229910045601 alloy Inorganic materials 0.000 claims 1
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 claims 1
- 229910001120 nichrome Inorganic materials 0.000 claims 1
- 239000010410 layer Substances 0.000 description 18
- 238000000034 method Methods 0.000 description 10
- 229910052802 copper Inorganic materials 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 238000000605 extraction Methods 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 229910000679 solder Inorganic materials 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 230000006378 damage Effects 0.000 description 3
- 238000001514 detection method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- -1 InSb-NiSb Chemical compound 0.000 description 1
- 229910000673 Indium arsenide Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
Landscapes
- Measuring Magnetic Variables (AREA)
- Hall/Mr Elements (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、磁気検出あるいは磁気
回転検出等に使用される半導体磁気抵抗素子からなる半
導体磁気センサに関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor magnetic sensor including a semiconductor magnetoresistive element used for magnetic detection or magnetic rotation detection.
【０００２】[0002]
【従来の技術】ＩｎＳｂ，ＩｎＳｂ−ＮｉＳｂ，ＩｎＡ
ｓ等のキャリヤ移動度が高い半導体は、磁界を作用させ
たとき抵抗値が変化するという性質を有しており、この
性質を利用したものが半導体磁気センサである。2. Description of the Related Art InSb, InSb-NiSb, InA
A semiconductor having a high carrier mobility such as s has a property that the resistance value changes when a magnetic field is applied, and a semiconductor magnetic sensor uses this property.
【０００３】図５に半導体磁気センサを使用している一
般的な磁気検出器の構造を示す。磁気検出器は、図５に
示すように４つのパーツにより構成されている。図中、
３１は半導体磁気センサ、３２は前記半導体磁気センサ
３１の電気信号の取り出し部（リード取り出し）、３３
はバイアス磁石であり、ベース３６の表裏に前記半導体
磁気センサ３１とバイアス磁石３３を配し、電磁シール
ドを兼ねた金属製の保護ケース３４内に収納されてい
る。FIG. 5 shows the structure of a general magnetic detector using a semiconductor magnetic sensor. The magnetic detector is composed of four parts as shown in FIG. In the figure,
Reference numeral 31 is a semiconductor magnetic sensor, 32 is a portion for taking out an electric signal of the semiconductor magnetic sensor 31 (lead taking-out), 33
Is a bias magnet, and the semiconductor magnetic sensor 31 and the bias magnet 33 are arranged on the front and back of the base 36, and are housed in a metal protective case 34 that also serves as an electromagnetic shield.
【０００４】この磁気検出器は、半導体磁気センサ３１
上の保護ケース３４の表面を被検出の磁気材が圧接移動
する。圧接により保護ケース３４がたわむこともあるの
で、半導体磁気センサ３１と保護ケース３４間にはエア
ーギャップ（空隙）３５が設けられ、半導体磁気センサ
３１の応力歪みによる抵抗変化の発生（以降、ピエゾ抵
抗効果と呼ぶ）及び磁気感度低下を防止すると共に保護
ケース３４と半導体磁気センサ３１の電気信号の取り出
し部との絶縁をも兼ねている。This magnetic detector is a semiconductor magnetic sensor 31.
The magnetic material to be detected moves in pressure contact with the surface of the upper protective case 34. Since the protective case 34 may bend due to pressure contact, an air gap (air gap) 35 is provided between the semiconductor magnetic sensor 31 and the protective case 34, and a resistance change due to stress strain of the semiconductor magnetic sensor 31 occurs (hereinafter, piezo resistance). (Referred to as “effect”) and magnetic sensitivity reduction, and also serves as insulation between the protective case 34 and the electric signal extraction portion of the semiconductor magnetic sensor 31.
【０００５】図６，７に従来の半導体磁気センサの構成
を示す。２１は基板、２２は前記基板上に設けた半導体
磁気抵抗膜、２３は前記半導体磁気抵抗膜２２上に設け
た短絡電極、２４は前記半導体磁気抵抗膜２２に設けた
出力取り出し電極である。6 and 7 show the structure of a conventional semiconductor magnetic sensor. Reference numeral 21 is a substrate, 22 is a semiconductor magnetoresistive film provided on the substrate, 23 is a short-circuit electrode provided on the semiconductor magnetoresistive film 22, and 24 is an output extraction electrode provided on the semiconductor magnetoresistive film 22.
【０００６】図８には半導体磁気センサからのリード取
り出し例を示す。図中、２６はリード取り出し端子、２
７は保護膜であり、保護膜２７はリード取り出し端子２
６を前記出力取り出し電極２４に接続した後に形成した
ものである。FIG. 8 shows an example of taking out leads from the semiconductor magnetic sensor. In the figure, 26 is a lead extraction terminal, 2
7 is a protective film, and the protective film 27 is a lead takeout terminal 2
6 is formed after being connected to the output extraction electrode 24.
【０００７】[0007]
【発明が解決しようとする課題】上記のように、半導体
磁気抵抗膜２２及び短絡電極２３上の保護膜２７は、リ
ード取り出し端子２６の接続後に形成されるものである
ため、リード取り出し端子２６の実装時に半導体磁気抵
抗膜２２及び短絡電極２３、特に半導体磁気抵抗膜２２
は非常に柔らかく取り扱いが非常に難しい。特に、半導
体磁気センサへのリード取り出し端子２６の接続及び磁
気検出器としての組立工程で、素子面等に傷や素子破壊
の恐れがあり、取り扱いに注意を要する。As described above, the protective film 27 on the semiconductor magnetoresistive film 22 and the short-circuit electrode 23 is formed after the lead take-out terminal 26 is connected. During mounting, the semiconductor magnetoresistive film 22 and the short-circuit electrode 23, especially the semiconductor magnetoresistive film 22
Is very soft and very difficult to handle. In particular, in the process of connecting the lead take-out terminal 26 to the semiconductor magnetic sensor and the assembling process as a magnetic detector, there is a risk of scratches or destruction of the element surface and the like, and caution is required in handling.
【０００８】本発明は上記課題を解消し得る半導体磁気
センサを提供することを目的とする。An object of the present invention is to provide a semiconductor magnetic sensor which can solve the above problems.
【０００９】[0009]
【課題を解決するための手段】上記課題を解決するため
の本発明の半導体磁気センサは、基板の表面に形成した
半導体磁気抵抗膜及び前記半導体磁気抵抗膜の電気信号
取り出し用の電極部を、前記電極部上のみを残して前記
基板上に形成した保護膜により保護するように構成した
ことを特徴としている。A semiconductor magnetic sensor of the present invention for solving the above-mentioned problems includes a semiconductor magnetoresistive film formed on a surface of a substrate and an electrode portion for extracting an electric signal of the semiconductor magnetoresistive film. It is characterized in that it is configured to be protected by a protective film formed on the substrate while leaving only the electrode portion.
【００１０】[0010]
【作用】以上の構成にすれば、磁気センサへのリード取
り出し端子の接続及び磁気検出器にするための組立工程
での取り扱いにて、非常に柔らかい半導体磁気抵抗膜や
短絡電極膜を傷つけず、素子を破壊等から防止すること
が出来る。With the above structure, the extremely soft semiconductor magnetoresistive film and the short-circuit electrode film are not damaged during the connection of the lead-out terminals to the magnetic sensor and the handling in the assembly process for forming the magnetic detector. It is possible to prevent the element from being broken.
【００１１】[0011]
【実施例】以下、本発明の実施例について図に基づき説
明する。Embodiments of the present invention will be described below with reference to the drawings.
【００１２】図１，２は本発明の半導体磁気センサの一
実施例を示す。図中、１はＳｉやガラス等の基板、２は
ＩｎＳｂ，ＩｎＳｂ−ＮｉＳｂ，ＩｎＡｓ等のキャリヤ
移動度が高い半導体磁気抵抗膜であり、前記基板１上に
設けられている。３は短絡電極であり、前記半導体磁気
抵抗膜２上に設けられている。４は半導体磁気抵抗膜２
の電気信号取り出し電極部であり、前記半導体磁気抵抗
膜２上に設けられている。前記短絡電極３及び電極部４
は、Ｃｕ／Ｔｉ，Ｃｕ／Ｃｒ，Ａｌ／Ｃｒ等の２層構造
として構成されている場合と、Ｉｎ等の単層構造として
構成されている場合とがある。尚、前記短絡電極３と電
極部４とを同一材料で形成すると工程が簡略化される。
６は前記半導体磁気抵抗膜２と短絡電極３を保護するポ
リイミド、ＳｉＯ2，ＳｉＮ等の保護膜であり、電極部
４上を残して基板１上に形成されている。７は素子から
の電気信号取り出し用のリード端子で、前記電極部４と
接続されている。ここで、前記電極部４がＣｕ／Ｔｉ，
Ｃｕ／Ｃｒ，Ｉｎ等で構成される場合には半田付けにて
接続され、電極部４がＡｌ／Ｃｒ等で構成される場合に
は熱加熱により接続されている。前記保護膜６は、前記
リード端子７を電極部４に接続前に形成するため、保護
膜６には、熱加圧等によりリード端子７を電極部４に接
続する時に発生する高熱が伝導される。例えば半田にて
接続する場合、３００〜３５０℃の高温が伝導され保護
膜６として耐熱性が要求されるため、ポリイミドが適し
ている。1 and 2 show an embodiment of the semiconductor magnetic sensor of the present invention. In the figure, 1 is a substrate such as Si or glass, and 2 is a semiconductor magnetoresistive film with high carrier mobility such as InSb, InSb-NiSb, InAs, etc., which is provided on the substrate 1. Reference numeral 3 is a short-circuit electrode, which is provided on the semiconductor magnetoresistive film 2. 4 is a semiconductor magnetoresistive film 2
Of the electric signal extracting electrode, and is provided on the semiconductor magnetoresistive film 2. The short-circuit electrode 3 and the electrode portion 4
May be configured as a two-layer structure of Cu / Ti, Cu / Cr, Al / Cr or the like, or may be configured as a single-layer structure of In or the like. If the short-circuit electrode 3 and the electrode portion 4 are made of the same material, the process is simplified.
Reference numeral 6 is a protective film for protecting the semiconductor magnetoresistive film 2 and the short-circuiting electrode 3, such as polyimide, SiO 2 , SiN, etc., which is formed on the substrate 1 except the electrode portion 4. Reference numeral 7 denotes a lead terminal for taking out an electric signal from the element, which is connected to the electrode portion 4. Here, the electrode portion 4 is Cu / Ti,
When they are made of Cu / Cr, In or the like, they are connected by soldering, and when they are made of Al / Cr or the like, they are connected by heating. Since the protective film 6 is formed before the lead terminal 7 is connected to the electrode portion 4, high heat generated when the lead terminal 7 is connected to the electrode portion 4 is conducted to the protective film 6 by applying heat or pressure. It For example, when connecting with solder, polyimide is suitable because a high temperature of 300 to 350 ° C. is conducted and heat resistance is required for the protective film 6.
【００１３】本実施例で素子実装工程及び磁気検出器と
するための組立工程を行った結果、素子面への傷、素子
破壊の発生は見られなかった。また、半導体磁気抵抗膜
は、素子面上に歪みを加えるとピエゾ抵抗効果が発生す
る特性があり、保護膜の形成膜に半導体磁気抵抗膜へ作
用する応力に注意する必要がある。このため保護膜によ
り発生する応力を小さく形成することが望ましい。Ｓｉ
Ｏ2，ＳｉＮ等の保護膜は、形成条件にて応力調整が出
来、素子特性への影響を低減出来るもので、実際条件に
より小さく形成できた。ポリイミド保護膜は、Ｓｉ
Ｏ2，ＳｉＮ等の保護膜に比べ膜応力がやや大きく形成
されたが、磁気特性を調べた結果、影響は少ないことが
確認された。ＳｉＯ2，ＳｉＮ等の保護膜は、一般的に
真空装置により基板１上の全面に形成され、電極部４上
の保護膜をフォトリソおよびエッチング工程にて除去し
て形成される。それに比べてポリイミド保護膜は、フォ
トリソ工程のみで形成されるために工程の簡略化及び安
価に形成出来る特徴を有している。さらに、５×１０-5
／℃以下の線膨張係数を有するポリイミドを用いると、
ＳｉＯ2，ＳｉＮ等の保護膜の作用する応力と同等また
はそれ以下に形成することが出来、さらに有利である。As a result of carrying out the element mounting step and the assembly step for forming a magnetic detector in the present embodiment, no damage to the element surface or element destruction was observed. Further, the semiconductor magnetoresistive film has a characteristic that a piezoresistive effect is generated when strain is applied on the element surface, and it is necessary to pay attention to the stress acting on the semiconductor magnetoresistive film in the protective film forming film. Therefore, it is desirable to reduce the stress generated by the protective film. Si
The protective film such as O 2 and SiN can be adjusted in stress depending on the forming conditions and can reduce the influence on the device characteristics, and can be formed small according to the actual conditions. Polyimide protective film is Si
Although the film stress was formed to be slightly larger than that of the protective film such as O 2 or SiN, the magnetic properties were examined, and it was confirmed that the influence was small. The protective film of SiO 2 , SiN or the like is generally formed on the entire surface of the substrate 1 by a vacuum device, and is formed by removing the protective film on the electrode portion 4 by a photolithography and etching process. On the other hand, since the polyimide protective film is formed only by the photolithography process, it has features that the process can be simplified and the cost can be reduced. Furthermore, 5 × 10 -5
When a polyimide having a linear expansion coefficient of / ° C or less is used,
This is more advantageous because the stress can be formed to be equal to or less than the stress acting on the protective film such as SiO 2 or SiN.
【００１４】図３に本発明の半導体磁気センサの第２の
実施例を示す。図３に示すように、第１の実施例の場合
のように電極部４を半導体磁気抵抗膜２上に形成するの
ではなく、電極部４を基板１上に形成し、基板１上に設
けた半導体磁気抵抗膜２に形成したものである。この実
施例では、電極部４として、Ｃｕ／Ｔｉ，Ｃｕ／Ｃｒ，
Ａｌ／Ｃｒの２層構造のものが利用され、電極部４と基
板１との剥離強度が約１．５倍向上した。第１の実施例
の構成では、リード端子７を電極部４に接続する際に熱
加熱等で発生する高熱と圧接により電極部４と電極部４
下の半導体磁気抵抗膜２とが拡散されさらに応力も加わ
り、基板１と磁気抵抗膜２の強度の低下が見られたが、
この第２の実施例では、電極部４が直接基板１上に形成
されているために、磁気抵抗膜２との拡散や応力の発生
が少ない。この第２の実施例により、基板１と電極部４
との接続の信頼性をさらに向上することが出来るもので
ある。FIG. 3 shows a second embodiment of the semiconductor magnetic sensor of the present invention. As shown in FIG. 3, instead of forming the electrode portion 4 on the semiconductor magnetoresistive film 2 as in the case of the first embodiment, the electrode portion 4 is formed on the substrate 1 and provided on the substrate 1. It is formed on the semiconductor magnetoresistive film 2. In this embodiment, as the electrode portion 4, Cu / Ti, Cu / Cr,
A two-layer structure of Al / Cr was used, and the peel strength between the electrode portion 4 and the substrate 1 was improved by about 1.5 times. In the structure of the first embodiment, when the lead terminal 7 is connected to the electrode portion 4, the electrode portion 4 and the electrode portion 4 are brought into contact with each other due to the high heat generated by heat heating and the pressure contact.
Although the lower semiconductor magnetoresistive film 2 was diffused and stress was further applied, the strengths of the substrate 1 and the magnetoresistive film 2 were reduced,
In the second embodiment, since the electrode portion 4 is formed directly on the substrate 1, diffusion with the magnetoresistive film 2 and generation of stress are small. According to this second embodiment, the substrate 1 and the electrode portion 4 are
It is possible to further improve the reliability of connection with.
【００１５】図４は本発明の半導体磁気センサの第３の
実施例を示す。図４に示すように、本実施例では、電極
部４としてＣｕ／Ｔｉ，Ｃｕ／Ｃｒ，Ａｌ／Ｃｒの２層
構造の第１の電極層８上にＡｕ／Ｎｉ，半田／Ｎｉ等の
２層構造の第２の電極層９を形成したものであり、第２
の電極層９を電界めっきにて形成することにより、電極
部４が保護膜６より高く形成されており、リード端子７
を接続したものである。電極部４を保護膜６より高く形
成することにより、リード端子７の形状や接続治工具、
またリード端子７の位置精度及び接続が簡単となる。ま
た第２の電極層９を電界めっきにより形成することによ
り、接続部材の選択範囲が拡大し接続の信頼性が向上す
る。バンプ形成は電極部４の材料や厚みの許容範囲が狭
く、また形成条件、管理が厳しく接続の信頼性の確保が
難しいが、他に第２の電極層９を形成する方法として
は、Ａｕ，Ａｌ等のバンプ形成がある。FIG. 4 shows a third embodiment of the semiconductor magnetic sensor of the present invention. As shown in FIG. 4, in the present embodiment, two electrodes such as Au / Ni and solder / Ni are formed on the first electrode layer 8 having a two-layer structure of Cu / Ti, Cu / Cr, and Al / Cr as the electrode portion 4. The second electrode layer 9 having a layered structure is formed, and
Since the electrode layer 9 is formed by electroplating, the electrode portion 4 is formed higher than the protective film 6, and the lead terminal 7
Is connected. By forming the electrode portion 4 higher than the protective film 6, the shape of the lead terminal 7 and the connection jig,
Moreover, the positional accuracy and connection of the lead terminal 7 are simplified. Further, by forming the second electrode layer 9 by electroplating, the selection range of the connection member is expanded and the reliability of connection is improved. In the bump formation, the allowable range of the material and thickness of the electrode portion 4 is narrow, and the formation conditions and management are strict, and it is difficult to secure the reliability of the connection, but as another method for forming the second electrode layer 9, Au, There is bump formation of Al or the like.
【００１６】この実施例によると、リードフレームやＴ
ＡＢ実装でのリード端子７の接続が容易になり、しかも
接続強度も向上するものである。尚、保護膜６は電極層
５をめっきにより形成する時のめっきマスクの役目を兼
ね備えており、工程の簡略化および安価にめっき形成出
来る特徴も兼ね備えている。According to this embodiment, the lead frame and the T
The connection of the lead terminal 7 in the AB mounting becomes easy, and the connection strength is also improved. The protective film 6 also serves as a plating mask when the electrode layer 5 is formed by plating, and also has the features of simplifying the process and enabling inexpensive plating.
【００１７】リードフレームによる接続の場合には半田
／Ｎｉの第２電極層９とすると、接続強度が特に良好
で、第２の実施例（Ｃｕ／Ｔｉ，Ｃｕ／Ｃｒ電極部４）
に比べ約１．５倍以上の接続強度が得られた。ＴＡＢ実
装による接続の場合にはＡｕ／Ｎｉ，半田／Ｎｉの第２
の電極層９とすると接続強度が特に良好で、第２の実施
例（Ｃｕ／Ｔｉ，Ｃｕ／Ｃｒ，Ａｌ／Ｃｒ電極部４）に
比べ約２倍以上の接続強度が得られた。In the case of connection by the lead frame, if the second electrode layer 9 of solder / Ni is used, the connection strength is particularly good, and the second embodiment (Cu / Ti, Cu / Cr electrode portion 4) is used.
The connection strength of about 1.5 times or more was obtained. In case of connection by TAB mounting, Au / Ni, solder / Ni second
When the electrode layer 9 was used, the connection strength was particularly good, and about twice or more the connection strength was obtained as compared with the second embodiment (Cu / Ti, Cu / Cr, Al / Cr electrode portion 4).
【００１８】さらに本実施例の第２の電極層９を第１の
電極層８の領域より小さく形成することで、リード端子
７の接続により発生する応力が電極部４の形成領域の全
領域に加わらない。よって電極部４と基板１との接続部
に直接応力が加わらず、接続強度の信頼性がさらに強化
され、接続条件やリードの取り扱いを容易にすることが
出来る。Further, by forming the second electrode layer 9 of the present embodiment smaller than the area of the first electrode layer 8, the stress generated by the connection of the lead terminals 7 is applied to the entire area of the formation area of the electrode portion 4. Do not join. Therefore, no stress is directly applied to the connecting portion between the electrode portion 4 and the substrate 1, the reliability of the connecting strength is further enhanced, and the connecting condition and the handling of the lead can be facilitated.
【００１９】尚、第３の実施例において、保護膜６とし
て耐熱性のポリイミドや線膨張係数が５×１０-5／℃以
下のポリイミドを使用することが出来ることは言うまで
もない。In the third embodiment, it is needless to say that heat-resistant polyimide or polyimide having a coefficient of linear expansion of 5 × 10 -5 / ° C. or less can be used as the protective film 6.
【００２０】他に、Ｃｕ／Ｔｉ，Ｃｕ／Ｃｒ，Ａｌ／Ｃ
ｒ等の短絡電極３及び電極部４の表面にＣｒ，Ｎｉ，Ｎ
ｉＣｒ等の材料でコーティングしてもよい。電極上には
保護膜６が形成されているが形成時にごみ等を巻き込ん
で欠陥の無い膜を形成することが出来にくく、現状の信
頼性には影響が無いが多少の酸化が生じている。本実施
例のような電極コーティングの構成とすることにより、
電極表面の酸化を確実に防止することが出来、高信頼性
を得ることが出来る。In addition, Cu / Ti, Cu / Cr, Al / C
Cr, Ni, N on the surfaces of the short-circuit electrode 3 and the electrode portion 4 such as r
It may be coated with a material such as iCr. Although the protective film 6 is formed on the electrodes, it is difficult to form a defect-free film by entrapping dust or the like at the time of formation, and the present reliability is not affected, but some oxidation occurs. With the configuration of the electrode coating as in this example,
Oxidation of the electrode surface can be reliably prevented and high reliability can be obtained.
【００２１】[0021]
【発明の効果】以上のように本発明によれば、基板の表
面に形成した半導体磁気抵抗膜及び、前記半導体磁気抵
抗膜の電気信号取り出し用の電極部を、前記電極部上の
みを残して前記基板に形成した保護膜により被覆してあ
るため、磁気センサへのリード取り出し端子の接続及び
磁気検出器とするための組立工程での取り扱いにて、非
常に柔らかい半導体磁気抵抗膜や短絡電極膜を傷つける
ことがなく、素子を破壊等から防止する事が出来るもの
である。As described above, according to the present invention, the semiconductor magnetoresistive film formed on the surface of the substrate and the electrode portion for extracting an electric signal of the semiconductor magnetoresistive film are left only on the electrode portion. Since it is covered with the protective film formed on the substrate, it is a very soft semiconductor magnetoresistive film or short-circuit electrode film when connecting the lead-out terminals to the magnetic sensor and handling in the assembly process to form a magnetic detector. It is possible to prevent the element from being damaged or the like without damaging the element.
【図１】本発明の半導体磁気センサの一実施例を示す斜
視図FIG. 1 is a perspective view showing an embodiment of a semiconductor magnetic sensor of the present invention.
【図２】同センサの断面図FIG. 2 is a sectional view of the sensor.
【図３】第２の実施例を示す半導体磁気センサの断面図FIG. 3 is a sectional view of a semiconductor magnetic sensor showing a second embodiment.
【図４】第３の実施例を示す半導体磁気センサの断面図FIG. 4 is a sectional view of a semiconductor magnetic sensor showing a third embodiment.
【図５】従来の磁気検出器を示す概略断面図FIG. 5 is a schematic sectional view showing a conventional magnetic detector.
【図６】従来の半導体磁気センサの斜視図FIG. 6 is a perspective view of a conventional semiconductor magnetic sensor.
【図７】同センサの断面図FIG. 7 is a sectional view of the sensor.
【図８】従来の半導体磁気センサリード取り出し構成を
示す断面図FIG. 8 is a cross-sectional view showing a conventional semiconductor magnetic sensor lead lead-out structure.
１，２１ 基板 ２，２２ 半導体磁気抵抗膜 ３，２３ 短絡電極 ４，２４ 電極部 ５ 第２の電極層 ６，２７ 保護膜 ７，２６ リード端子 ８ ２層構造の第１の電極層 ９ ２層構造の第２の電極層 ３１ 半導体磁気センサ ３２ リード取り出し部 ３３ バイアス磁石 ３４ 保護ケース ３５ エアーギャップ ３６ ベース 1, 21 substrate 2, 22 semiconductor magnetoresistive film 3, 23 short-circuit electrode 4, 24 electrode part 5 second electrode layer 6, 27 protective film 7, 26 lead terminal 8 first electrode layer of two-layer structure 9 2 layers Second electrode layer of structure 31 Semiconductor magnetic sensor 32 Lead extraction part 33 Bias magnet 34 Protective case 35 Air gap 36 Base
───────────────────────────────────────────────────── フロントページの続き (72)発明者 谷川 秀之 大阪府門真市大字門真1006番地 松下電器 産業株式会社内 (72)発明者 松浦 昭 大阪府門真市大字門真1006番地 松下電器 産業株式会社内 (72)発明者 大内 智 大阪府門真市大字門真1006番地 松下電器 産業株式会社内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Hideyuki Tanigawa, 1006 Kadoma, Kadoma, Osaka Prefecture, Matsushita Electric Industrial Co., Ltd. (72) Akira Matsuura, 1006, Kadoma, Kadoma, Osaka Prefecture Matsushita Electric Industrial Co., Ltd. 72) Inventor Satoshi Ouchi 1006 Kadoma, Kadoma City, Osaka Prefecture Matsushita Electric Industrial Co., Ltd.
Claims (8)
と、前記半導体磁気抵抗膜上に形成した短絡電極および
電気信号取り出し用の電極部と、前記電極部のみを残し
て前記基板上に前記半導体磁気抵抗膜および短絡電極を
覆うように形成した保護膜を備えた半導体磁気センサ。1. A semiconductor magnetoresistive film formed on a surface of a substrate, a short-circuit electrode and an electrode portion for extracting an electric signal formed on the semiconductor magnetoresistive film, and the above-mentioned substrate on the substrate leaving only the electrode portion. A semiconductor magnetic sensor comprising a semiconductor magnetoresistive film and a protective film formed so as to cover the short-circuit electrode.
気抵抗膜に接続したことを特徴とする請求項１記載の半
導体磁気センサ。2. The semiconductor magnetic sensor according to claim 1, wherein the electrode portion is formed on the substrate and is connected to the semiconductor magnetoresistive film.
構成したことを特徴とする請求項１または２記載の半導
体磁気センサ。3. The semiconductor magnetic sensor according to claim 1, wherein the protective film is made of a heat-resistant polyimide material.
℃以下のポリイミド材であることを特徴とする請求項１
または２記載の半導体磁気センサ。4. The protective film has a linear expansion coefficient of 5 × 10 −5 /
A polyimide material having a temperature of ℃ or less.
Alternatively, the semiconductor magnetic sensor according to the item 2.
た第１の電極層と、この第１の電極層上に形成した第２
の電極層とを備えており、保護膜の厚さより高く構成し
たことを特徴とする請求項１，２，３，４のいずれかに
記載の半導体磁気センサ。5. The electrode portion comprises a first electrode layer connected to the semiconductor magnetoresistive film, and a second electrode layer formed on the first electrode layer.
5. The semiconductor magnetic sensor according to claim 1, wherein the semiconductor magnetic sensor is configured to have a thickness higher than a thickness of the protective film.
とを特徴とする請求項５記載の半導体磁気センサ。6. The semiconductor magnetic sensor according to claim 5, wherein the second electrode layer is formed by plating.
り小さく形成したことを特徴とする請求項５または６記
載の半導体磁気センサ。7. The semiconductor magnetic sensor according to claim 5, wherein the second electrode layer is formed smaller than the region of the first electrode layer.
ｉ，ＮｉＣｒ合金のいずれかでコーティングしたことを
特徴とする請求項１または２記載の半導体磁気センサ。8. The surface of the short-circuit electrode and the electrode portion is made of Cr, N
3. The semiconductor magnetic sensor according to claim 1, wherein the semiconductor magnetic sensor is coated with either i or NiCr alloy.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7198527A JPH0945975A (en) | 1995-08-03 | 1995-08-03 | Semiconductor magnetic sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7198527A JPH0945975A (en) | 1995-08-03 | 1995-08-03 | Semiconductor magnetic sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0945975A true JPH0945975A (en) | 1997-02-14 |
Family
ID=16392633
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7198527A Pending JPH0945975A (en) | 1995-08-03 | 1995-08-03 | Semiconductor magnetic sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0945975A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000101162A (en) * | 1998-09-25 | 2000-04-07 | Asahi Kasei Denshi Kk | Small-sized magnetoelectric transducer and manufacture thereof |
| JP2014098611A (en) * | 2012-11-14 | 2014-05-29 | Nidec Sankyo Corp | Magnetic sensor device and method for manufacturing the same |
-
1995
- 1995-08-03 JP JP7198527A patent/JPH0945975A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000101162A (en) * | 1998-09-25 | 2000-04-07 | Asahi Kasei Denshi Kk | Small-sized magnetoelectric transducer and manufacture thereof |
| JP4573368B2 (en) * | 1998-09-25 | 2010-11-04 | 旭化成エレクトロニクス株式会社 | Manufacturing method of small magnetoelectric transducer for face-down connection |
| JP2014098611A (en) * | 2012-11-14 | 2014-05-29 | Nidec Sankyo Corp | Magnetic sensor device and method for manufacturing the same |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4005288A (en) | Photodetector mounting and connecting | |
| JP3258066B2 (en) | Manufacturing method of thermopile type infrared sensor | |
| JPH0945975A (en) | Semiconductor magnetic sensor | |
| JPH0661012A (en) | Thin film thermistor | |
| JPH09116173A (en) | Semiconductor sensor and its manufacture | |
| US4089991A (en) | Process for applying electrical conductors for Dewar flask | |
| US5958606A (en) | Substrate structure with adhesive anchoring-seams for securely attaching and boding to a thin film supported thereon | |
| JP3152005B2 (en) | Manufacturing method of semiconductor acceleration sensor | |
| JP3588952B2 (en) | Semiconductor thin film magnetoresistive element | |
| JP2610083B2 (en) | Ferromagnetic magnetoresistive element | |
| JP2001119083A (en) | Semiconductor magnetism detection element | |
| US3992774A (en) | Method for fabricating lead through for Dewar flask | |
| JP3510803B2 (en) | Flow rate detecting device and manufacturing method thereof | |
| JPH0886848A (en) | Magnetism detector | |
| KR200197336Y1 (en) | Thin Film Thermocouple within the Bonded Silicon Wafers | |
| JP3569129B2 (en) | Flow detector | |
| JP2990971B2 (en) | Semiconductor thin film magnetoresistive element and method of manufacturing the same | |
| JP2946983B2 (en) | Magnetoresistive element | |
| JPH05304325A (en) | Semiconductor thin film magnetic resistor element and fabrication thereof | |
| JPH06164016A (en) | Semiconductor thin-film magnetoresistance element | |
| JPH0484471A (en) | Manufacture of integrated magnetic sensor | |
| JPS6370584A (en) | Magnetoresistance effect type element of shunt type | |
| JP2003188438A (en) | Magneto-resistive element | |
| JPS61156824A (en) | Semiconductor device | |
| KR0174124B1 (en) | Fabricating method of semiconductor pressure sensor |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20040427 |