JP2001119083A - Semiconductor magnetism detection element - Google Patents

Abstract

PROBLEM TO BE SOLVED: To reduce strain stresses applied on a magnetism-sensing part, when temperatures change in a semiconductor magnetism detection element for use in detection of rotation, displacement, or the like of a magnetic body. SOLUTION: A protective substrate 5 is structured, so that an opening gap is formed with respect to a magnetism sensing part comprising a semiconductor magnetism resisting effect film 2 and a short-circuit electrode 3 provided on a semiconductor substrate 1, whereby strain stresses applied on the magnetism sensing part is reduced, when temperatures change, and a magnetism sensitivity of a semiconductor magnetism detection element is enhanced.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor magnetic detecting element used for detecting displacement such as rotation or linear movement of a magnetic material.

[0002]

2. Description of the Related Art Semiconductor magnetic sensing elements include InSb, In
Japanese Patent Application Laid-Open No. Hei 5-1 is to utilize a property that a voltage and a resistance value when a magnetic field is applied to a semiconductor having a high carrier mobility such as Sb-NiSb and InAs.
As described in Japanese Patent No. 47422, a magnetoresistive film such as InSb is directly heteroepitaxially grown on an oriented substrate such as Si.

FIG. 6 shows the structure of a conventional semiconductor magnetic sensing element. In FIG. 6, reference numeral 1 denotes a semiconductor substrate having electrical insulation, for example, Si, sapphire, or the like. Reference numeral 2 denotes InSb, I formed on the semiconductor substrate 1.
It is a semiconductor magnetoresistive film of nSb-NiSb, InAs or the like. Reference numeral 3 denotes a short-circuit electrode, and reference numeral 4 denotes an extraction electrode, each of which is electrically connected to the semiconductor magnetoresistive film 2 and generally formed of the same material. Reference numeral 10 denotes a protective film made of an epoxy resin, a polyimide resin, or the like, which is provided so as to be in close contact with the semiconductor magnetoresistive film 2 and the short-circuit electrode 3, and protects a magnetically sensitive portion formed from these.

[0004]

In such a semiconductor magnetic detecting element, since the protective film 10 is in contact with the magnetically sensitive portion formed by the semiconductor magnetoresistive film 2 and the short-circuit electrode 3,
When the temperature changes, a strain stress due to thermal expansion and contraction of the protective film 10 is generated in the magnetic sensing portion, and the strain stress changes the resistance value of the semiconductor magnetic sensing element, thereby lowering the detection accuracy of the semiconductor magnetic sensing element. There was a problem.

Further, since two elements are normally used for differential detection, if the formation state of the protective film 10 in each element is different, a difference occurs in the amount of distortion, and there is a problem that the detection accuracy is deteriorated.

[0006] Therefore, in recent years, it has been required to reduce distortion to the magnetic sensing portion caused by heat.

The present invention has been made in view of the above-mentioned problems, and has as its object to provide a semiconductor magnetic detection element having improved detection accuracy by preventing the magnetic sensing portion of the semiconductor magnetic detection element from being easily distorted. .

[0008]

In order to solve this problem, a semiconductor magnetic sensing element according to the present invention comprises a semiconductor comprising a group III-V compound provided on a semiconductor substrate having substantially electrical insulation. A protective substrate is provided so as to form a gap with respect to the magneto-sensitive portion including the magneto-resistance effect film and the short-circuit electrode provided on the semiconductor magneto-resistance effect film. Thereby, the distortion of the magnetic sensing portion of the semiconductor magnetic sensing element due to heat is reduced, and the detection accuracy can be improved.

[0009]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The invention according to claim 1 of the present invention is directed to a semiconductor magnetoresistive device comprising a semiconductor substrate having substantially electrical insulation and a III-V compound provided on the semiconductor substrate. An effect film, a magnetically sensitive portion including a short-circuit electrode provided at a central portion on the semiconductor magnetoresistive effect film, an extraction electrode provided at an end portion on the semiconductor magnetoresistive effect film, and a magnetic sensitive portion. A semiconductor magnetic sensing element comprising a protection substrate joined to a peripheral portion of the semiconductor substrate so as to form a gap, and exposing the extraction electrode outside the protection substrate, wherein a gap is formed with respect to the magnetically sensitive portion. Since the protective substrate is provided as described above, the distortion of the magnetic sensing portion of the semiconductor magnetic sensing element due to heat is reduced, and the detection accuracy is improved.

According to a second aspect of the present invention, there is provided a semiconductor magnetic sensing element according to the first aspect, wherein a spacer is used for joining the semiconductor layer and the protective substrate, and has the same function as the first aspect.

According to a third aspect of the present invention, there is provided a semiconductor magnetic sensing element according to the second aspect, wherein the spacer is formed by a process of forming a magnetically sensitive portion, and has the same operation as the first aspect of the present invention.

According to a fourth aspect of the present invention, there is provided a semiconductor substrate having substantially electrical insulation, a semiconductor magnetoresistive film made of a group III-V compound provided on the semiconductor substrate,
A magnetic sensing portion including a short-circuit electrode provided at a central portion on the semiconductor magneto-resistance effect film, an extraction electrode provided at an end portion on the semiconductor magneto-resistance effect film, and a gap is formed with respect to the magnetic sensing portion. And a protection substrate joined to a peripheral portion of the semiconductor substrate, an extraction electrode is arranged inside the protection substrate, and a lead-out electrode electrically connected to the extraction electrode is provided on the protection substrate. It is an element and has the same function as the first aspect of the present invention.

According to a fifth aspect of the present invention, there is provided a semiconductor substrate having substantially electrical insulation, a semiconductor magnetoresistive film made of a group III-V compound provided on the semiconductor substrate,
A detecting element section comprising a magnetic sensing portion including a short-circuit electrode provided at a central portion on the semiconductor magnetoresistive film, and an extraction electrode provided at an end on the semiconductor magnetoresistive film; An insulating substrate disposed so as to face the back surface of the pattern and a protective substrate disposed so as to form a gap on the pattern surface of the detection element portion, facing the pattern surface of the detection element portion, A semiconductor magnetic sensing element in which a substrate and a protection substrate are joined, and a lead electrode electrically connected to the extraction electrode is provided on one of the insulating substrate and the protection substrate. Has an action.

According to a sixth aspect of the present invention, there is provided a semiconductor magnetic sensing element according to the fifth aspect, wherein a spacer is used for joining the insulating substrate and the protective substrate, and has the same function as the first aspect of the present invention.

FIG. 1 shows an embodiment of the present invention.
This will be described with reference to FIG.

(First Embodiment) FIG. 1 is a perspective view showing a first embodiment of a semiconductor magnetic sensing element according to the present invention.

In FIG. 1, 1 is Si, sapphire, S
A semiconductor substrate showing electrical insulation such as OI;
b, InSb—NiSb, InAs, etc., a semiconductor magnetoresistive film having a high carrier mobility.
It is formed directly on top of a thin film by vapor deposition or the like.

3 is Au / Ni, Al / Cr, Cu / T
A number of short-circuit electrodes made of a material such as i, Cu / Cr, Cu / Ti / Cr, etc., and 4 is an extraction electrode for extracting an electric signal from the semiconductor magnetoresistive film 2 using the same material as the short-circuit electrode 3 It is. The short-circuit electrode 3 is provided at the center of the semiconductor magnetoresistive film 2, and the extraction electrode 4 is provided at the end of the semiconductor magnetoresistive film 2.

Reference numeral 5 denotes a protective substrate provided so as to form a gap with respect to a magnetically sensitive portion comprising the semiconductor magnetoresistive film 2 and the short-circuit electrode 3, and is directly bonded to the semiconductor substrate 1.

It is desirable to use a material having a thermal expansion coefficient substantially equal to that of the semiconductor substrate 1 as the material of the protection substrate 5.
A glass substrate is used.

In the semiconductor magnetic sensing element manufactured in this embodiment, since there is a gap between the magnetically sensitive part and the protective substrate, the strain stress on the magnetically sensitive part is reduced, and the magnetic sensitivity of the magnetically sensitive part is improved.

(Embodiment 2) FIG. 2 is a sectional view showing a second embodiment of the semiconductor magnetic sensing element of the present invention.

In FIG. 2, parts that are the same as the parts shown in FIG. 1 are given the same reference numerals, and descriptions thereof will be omitted. The difference from FIG. 1 is that by providing a spacer 6 such as glass between the semiconductor substrate 1 and the protection substrate 5, a predetermined gap is secured between the magnetically sensitive part and the protection substrate 5.

The same effect can be obtained even if the spacer is made of a polyimide resin or the like formed by the process of forming the magnetically sensitive portion.

(Embodiment 3) FIG. 3 is a sectional view showing a third embodiment of the semiconductor magnetic sensing element of the present invention.

In FIG. 3, the same portions as those shown in FIG. 1 are denoted by the same reference numerals and description thereof will be omitted.

1 is different from FIG. 1 in that it has a lead-out electrode 7 provided on a protective substrate 5, and the material may be the same as that of the extraction electrode 4. The lead-out electrode 7 is taken out through a through-hole 8 provided in the protective substrate 5,
Is electrically connected to

Since a conductive paste or the like is used for the through hole 8, the semiconductor substrate 1 and the protection substrate 5 are joined so that there is no gap between the extraction electrode 4 and the protection substrate 5.

Further, by forming the height of the extraction electrode 1 above the semiconductor substrate 1 to be higher than the height of the short-circuit electrode 3, it is possible to form a gap between the magnetic sensing portion and the protection substrate. I can do it.

(Embodiment 4) FIG. 4 is a sectional view showing a fourth embodiment of the semiconductor magnetic sensing element of the present invention.

In FIG. 4, parts that are the same as the parts shown in FIGS. 1 and 3 are given the same reference numerals, and descriptions thereof will be omitted.
The difference from FIG. 1 is that the protection substrate 5 is directly bonded to an insulating substrate 9 made of glass or the like disposed on the back surface of the pattern of the detection element portion, thereby forming a gap on the magnetic sensing portion.

(Embodiment 5) FIG. 5 is a sectional view showing a fifth embodiment of the semiconductor magnetic sensing element of the present invention.

In FIG. 5, the same parts as those shown in FIGS. 1, 3 and 4 are denoted by the same reference numerals and description thereof is omitted. The difference from FIG. 1 is that a gap is formed on the magneto-sensitive part by the spacer 6 provided between the insulating substrate 9 and the protective substrate 5 arranged on the back surface of the pattern of the detection element part.

[0034]

As described above, the semiconductor magnetic sensing element according to the present invention has a larger sensitivity than the conventional semiconductor magnetic sensing element in which a protective film is formed directly on the magnetic sensing part when there is a temperature change. Since stress due to strain can be removed, there is an advantage that magnetic sensitivity is improved and detection accuracy is improved.

[Brief description of the drawings]

FIG. 1 is a perspective view showing a first embodiment of a semiconductor magnetic sensing element of the present invention.

FIG. 2 is a cross-sectional view showing the second embodiment.

FIG. 3 is a sectional view showing the third embodiment.

FIG. 4 is a sectional view showing the fourth embodiment.

FIG. 5 is a sectional view showing the fifth embodiment.

FIG. 6 is a sectional view of a conventional magnetic sensing element.

[Explanation of symbols]

 REFERENCE SIGNS LIST 1 semiconductor substrate 2 semiconductor magnetoresistive film 3 short-circuit electrode 4 extraction electrode 5 protective substrate 6 spacer 7 lead electrode 8 through hole 9 insulating substrate 10 protective film

Claims (6)

[Claims] 1. A semiconductor substrate exhibiting substantially electrical insulation, a semiconductor magnetoresistive effect film made of a group III-V compound provided on the semiconductor substrate, and a central portion on the semiconductor magnetoresistive effect film A magnetic sensing portion including a short-circuit electrode provided on the semiconductor substrate; an extraction electrode provided at an end on the semiconductor magnetoresistive film; and a peripheral portion of the semiconductor substrate so as to form a gap with respect to the magnetic sensing portion. A semiconductor magnetic sensing element comprising: a protective substrate, wherein the extraction electrode is exposed outside the protective substrate. 2. The semiconductor magnetic sensing element according to claim 1, wherein a spacer is used for joining the semiconductor magnetoresistive film and the protective substrate. 3. The semiconductor magnetic sensing element according to claim 2, wherein said spacer is formed by a process of forming a magnetically sensitive portion. 4. A semiconductor substrate exhibiting substantially electrical insulation, a semiconductor magnetoresistive effect film made of a group III-V compound provided on the semiconductor substrate, and a central portion on the semiconductor magnetoresistive effect film A magnetic sensing portion including a short-circuit electrode provided on the semiconductor substrate; an extraction electrode provided at an end on the semiconductor magnetoresistive film; and a peripheral portion of the semiconductor substrate so as to form a gap with respect to the magnetic sensing portion. A semiconductor magnetic sensing element comprising: a protective substrate formed as described above; an extraction electrode disposed inside the protection substrate; and a lead electrode electrically connected to the extraction electrode on the protection substrate. 5. A semiconductor substrate having substantially electrical insulation, a semiconductor magnetoresistive film made of a group III-V compound provided on the semiconductor substrate, and a central portion on the semiconductor magnetoresistive film A sensing element portion including a magnetic sensing portion including a short-circuit electrode provided on the substrate, and an extraction electrode provided at an end portion of the semiconductor magnetoresistive film, and is arranged so as to face a pattern back surface of the sensing element portion. A protection substrate disposed so as to form an air gap on the pattern surface of the detection element portion, facing the insulation substrate and the pattern surface of the detection element portion, and joining the insulation substrate and the protection substrate, A semiconductor magnetic sensing element in which a lead electrode electrically connected to the extraction electrode is provided on one of a substrate and a protection substrate. 6. The semiconductor magnetic sensing element according to claim 5, wherein a spacer is used for joining the insulating substrate and the protection substrate.