JP2002299599A - Integrated magnetic sensor and its manufacturing method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To manufacture a thin compound semiconductor film having large electron mobility to become a magnetic sensor on an Si substrate without deteriorating characteristics of an integrated circuit. SOLUTION: The magnetic sensor 2 and a control circuit 3 are integrated on the same Si Substrate 1. The sensor 2 uses the compound semiconductor thin film exhibiting an n-type conductivity and containing In, In and Sb and InSb manufactured on the insulating layer formed on the Si substrate as the magnetic sensor. The control circuit 3 includes an amplifier circuit for amplifying the output of the magnetic sensor 2.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

[0001] 1. Field of the Invention [0002] The present invention relates to an integrated magnetic sensor and a method of manufacturing the same, and more particularly, to an integrated circuit in which an amplifying circuit element composed of an integrated circuit of Si and a compound semiconductor are used as a magnetic sensor unit on the same substrate. Magnetic sensor and a method for manufacturing the same.

[0002]

2. Description of the Related Art In a conventional integrated magnetic sensor, a Si Hall element is manufactured on a Si substrate together with a Si control circuit, and is generally called a Hall IC. In this Hall IC, the magnetic field detection sensitivity of a Hall element serving as a magnetic sensor is as low as about 1/30 of that of a compound semiconductor.
Due to the physical characteristics of the sensor, it is sensitive to external mechanical forces, and special pattern technology is essential to eliminate the effects of distortion due to external forces. Is complicated, the cost is high, and
Because of low sensitivity, there was also a problem in reliability in use.

Further, when an attempt is made to manufacture a high-sensitivity sensor by increasing the amplification factor in an amplifier circuit, the magnetic field detection sensitivity is as low as about 1/30 of that of a compound semiconductor. Therefore, there is a problem that the offset voltage is amplified together with the output voltage of the magnetic sensor, and a special circuit design is required.

[0004]

In order to solve such an increase in the sensitivity of the Si Hall IC, a Hall element of a highly sensitive compound semiconductor is used as a magnetic sensor, an amplifier circuit is used as an IC of Si, and both chips are used as one chip. A packaged hybrid Hall IC has been developed. In this case, bonding and the like are more complicated than monolithic Hall ICs in making two chips into one package. That is, there is a problem that assembly is complicated because two chips are formed into one package.

In order to solve the problems of the conventional Hall IC, the present inventor has proposed a monolithic Hall IC.
We have studied high-sensitivity, high-performance integrated magnetic sensors, with the exception that they are excellent in assemblability with one chip.

A major problem at this time is whether it is possible to manufacture a compound semiconductor high-sensitivity magnetic sensor on the Si substrate on which the circuit is manufactured without destroying the IC circuit manufactured on the Si substrate. It is. In order to use a conventional well-known GaAs Hall element for the magnetic sensor of the magnetic sensing part, the crystal growth temperature for manufacturing the magnetic sensing part of the GaAs thin film was as high as 600 ° C. or more, and the semiconductor element was manufactured on a Si substrate. The integrated circuit was destroyed when manufacturing a GaAs thin film, and could not be used as a magnetic sensor for a Hall IC.

As described above, in the prior art, a Hall effect IC having a monolithic structure using a compound semiconductor for the magnetic sensor portion is used.
However, there is a problem that the circuit of Si can be freely formed by IC technology, but the IC circuit is destroyed at a high temperature when a compound semiconductor thin film having high electron mobility is grown on the Si substrate on which the IC is manufactured. In fact, production was impossible.

The present invention has been made in view of such a problem, and an object of the present invention is to provide a compound semiconductor having a large electron mobility serving as a magnetic sensing portion on a Si substrate without deteriorating the characteristics of an integrated circuit. An object of the present invention is to provide an integrated magnetic sensor for manufacturing a thin film and a method for manufacturing the same.

[0009]

SUMMARY OF THE INVENTION The present inventor has studied a high-sensitivity, high-performance integrated magnetic sensor while leaving the advantage of a monolithic Hall IC that is excellent in assemblability with one chip. In particular, the technology of manufacturing a thin film as a magnetic sensing part of a compound semiconductor magnetic sensor on a Si substrate at a low temperature and the problem of insulation from the Si substrate were examined. Therefore, it has become a major problem to manufacture a compound semiconductor thin film having high electron mobility under conditions that do not destroy the IC.

The present inventors have focused on InSb, which can grow crystals at a relatively low temperature, and molecular beam epitaxy, which grows crystals using an ultra-high vacuum. Furthermore, an attempt was made to obtain InSb having good crystallinity using a compound semiconductor insulating layer.

As a result, the present inventors have found a technique for integrating a magnetic sensor having a monolithic structure and a highly sensitive compound semiconductor thin film as a magnetic sensing part and a control circuit for amplifying the output of the magnetic sensor on the same Si substrate. Was reached. In particular,
The control circuit of the magnetic sensor is manufactured in advance on a Si substrate by a standard integrated circuit technology, and then, without deteriorating the characteristics of the integrated circuit, the electron mobility serving as a magnetic sensing part is formed on the Si substrate on which the integrated circuit is manufactured. Technology for manufacturing compound semiconductor thin films, technology for manufacturing magnetic sensors using the thin films, and technology for connecting magnetic sensors and control circuits with wiring.
An integrated device structure for integrating a Si integrated circuit and a magnetic sensor on the same Si substrate has been established.

In order to achieve the above object, the present invention provides an n-type conductivity including In formed on an insulating layer formed on a Si substrate. A magnetic sensor having a compound semiconductor thin film as a magnetic sensing portion and a control circuit including an amplifier circuit for amplifying an output of the magnetic sensor are integrated on the same Si substrate.

According to a second aspect of the present invention, there is provided a magnetic sensor comprising a compound semiconductor thin film having n-type conductivity and containing In and Sb formed on an insulating layer formed on a Si substrate. The sensor and a control circuit including an amplifier circuit for amplifying the output of the magnetic sensor are integrated on the same Si substrate.

According to a third aspect of the present invention, there is provided an n-type semiconductor including InSb formed on an insulating layer formed on a Si substrate.
And a control circuit including an amplifier circuit for amplifying the output of the magnetic sensor and a control circuit including an amplifier circuit for amplifying the output of the magnetic sensor are integrated on the same Si substrate. Is what you do.

The invention described in claim 4 is the first invention.
In the invention described in any one of Items 1 to 4, the insulating layer may
Compound semiconductor _{Ga x In 1-x Sb y} As 1-y (0 ≦
x ≦ 1, 0 ≦ y ≦ 1) is characterized by including at least one insulating layer or high resistance layer.

According to a fifth aspect of the present invention, in the first, second, or third aspect of the present invention, the magnetic sensor and the control circuit are arranged on the Si substrate via an insulating layer via an insulating layer. It is characterized by being electrically connected by a metal thin film.

The invention described in claim 6 is the first invention.
6. The magnetic sensor according to any one of items 1 to 5, wherein the magnetic sensor includes In manufactured on an insulating layer formed on the Si substrate, and includes a trace amount of impurities Si, Sn, Te,
It is characterized by including at least one donor atom such as Ce, S, and Ge.

The invention according to claim 7 is the first invention.
7. The invention according to any one of the first to sixth aspects, wherein the magnetic sensor is a Hall element or a magnetoresistive element.

The invention described in claim 8 is the first invention.
8. The invention according to any one of claims 7 to 7, wherein the magnetic sensor is a digital output having an operation of outputting two low-level or high-level voltages corresponding to detection or non-detection of a magnetic field. It is.

The invention according to claim 9 is the first invention.
The invention according to any one of the first to eighth aspects, wherein the control circuit outputs a voltage proportional to a magnetic field detected by the magnetic sensor.

According to a tenth aspect of the present invention, there is provided a magnetic sensor having a compound semiconductor thin film as a magnetic sensing part on an insulating layer formed on a Si substrate, and an amplifier circuit for amplifying an output of the magnetic sensor. A method of manufacturing an integrated magnetic sensor in which a control circuit and a control circuit are integrated on the same Si substrate, wherein a control circuit of the magnetic sensor is partially formed on the Si substrate by a standard IC process technology. Covering the entire surface of the Si substrate with an insulating layer; and forming an ultra-high vacuum (5 × 10
Forming a compound semiconductor thin film serving as a magnetically sensitive part on the Si substrate at a heating temperature in the range of 250 to 500 ° C. under ⁻⁷ Torr; vacuum degree of 6.6 × 10 ⁻⁵ Pa or less; A step of fabricating the pattern of the magnetic sensor while leaving only a required portion of the semiconductor thin film, and opening a plurality of windows in the required portion to electrically connect electrodes between the control circuit and the magnetic sensor. And forming a wiring made of a metal thin film.

According to an eleventh aspect of the present invention, in the tenth aspect of the present invention, the step of forming the compound semiconductor thin film includes the step of forming n-type impurities Si, Sn, Te, Ce,
The method is characterized by including a step of doping at least one kind of donor atoms such as S and Ge.

According to a twelfth aspect of the present invention, in the invention of the tenth or eleventh aspect, after the step of covering with the insulating layer, the magneto-sensitive layer thin film and the lattice constant are formed on the surface of the insulating layer.
The method is characterized by including a step of forming a thin film insulating layer made of a compound semiconductor having similar or the same value under an ultra-high vacuum.

That is, the present invention provides a magnetic sensor using a compound semiconductor thin film exhibiting n-type conductivity containing In and formed on an insulating layer formed on a Si substrate as a magnetic sensing portion, and an output of the magnetic sensor. The integrated magnetic sensor is characterized in that a control circuit including an amplifying circuit for amplifying is integrated on the same Si substrate.

Further, preferably, a Hall element using a compound semiconductor thin film exhibiting n-type conductivity containing In and Sb formed on an insulating layer formed on a Si substrate as a magnetic sensing portion, and the magnetic sensor An integrated magnetic sensor, wherein a control circuit including an amplifier circuit for amplifying an output of the integrated magnetic sensor is integrated on the same Si substrate.

Further, preferably, a magnetoresistive element using a compound semiconductor thin film exhibiting n-type conductivity containing In and Sb formed on an insulating layer formed on a Si substrate as a magnetic sensing portion; An integrated magnetic sensor, wherein a control circuit including an amplifier circuit for amplifying the output of the resistance element is integrated on the same Si substrate.

More preferably, a magnetic sensor using a compound semiconductor exhibiting n-type conductivity containing InSb and formed on an insulating layer formed on a Si substrate as a magnetic sensing portion operating layer, and the magnetic sensor A control circuit including at least an amplifying circuit for amplifying an output obtained by detecting a magnetic field is manufactured on the same Si substrate, and the insulating layer is formed of a compound semiconductor GaxIn.
1-xSbyAs1-y (0 ≦ x ≦ 1, 0 ≦ y ≦ 1) or GaxAl1-xSbyAs1-y (0 ≦ x ≦
An integrated magnetic sensor comprising at least one insulating layer composed of 1,0 ≦ y ≦ 1).

Still more preferably, a magnetic sensor using a compound semiconductor exhibiting n-type conductivity containing InSb and formed on an insulating layer formed on a Si substrate as a magnetic sensing portion operating layer, and the magnetic sensor A control circuit including at least an amplifying circuit for amplifying an output obtained by detecting a magnetic field is manufactured on the same Si substrate, and the insulating layer is formed of a compound semiconductor GaxIn.
1-xSbyAs1-y (0 ≦ x ≦ 1, 0 ≦ y ≦ 1) and GaxAl1-xSbyAs1-y (0 ≦ x ≦ 1,
An integrated magnetic sensor comprising at least one insulating layer composed of 0 ≦ y ≦ 1). Each of these semiconductor layers may have a plurality of stacked layers.

These semiconductor layers are heated at a temperature of 500 ° C. or less, which does not substantially destroy or deteriorate circuit elements on Si, and are manufactured in a vacuum. Further, it is manufactured at the same temperature as or near the growth temperature of the compound semiconductor thin film containing In and Sb and exhibiting n-type conductivity. Moreover, they are often grown in the same vacuum chamber. In particular, the range of 380 to 470 ° C. is a suitable temperature range.

Further, a magnetic sensor using a compound semiconductor thin film having n-type conductivity containing InSb formed on an insulating layer formed on a Si substrate as a magnetic sensing portion, and amplifying an output of the magnetic sensor. A control circuit including at least an amplifying circuit is integrated on the same Si substrate, and both are electrically connected by a conductive metal thin film wired on the Si substrate via an insulating layer. Integrated magnetic sensor.

In a still more preferable case, In includes In produced on an insulating layer formed on a Si substrate,
A magnetic sensor comprising at least one donor atom such as a trace amount of impurities Si, Sn, Te, Ce, S, and Ge, and using a compound semiconductor thin film exhibiting n-type conductivity as a magnetic sensing portion. Magnetic sensor.

Further, as a more preferable example, a magnetic sensor using a compound semiconductor thin film having an n-type conductivity containing In and manufactured on an insulating layer formed on a Si substrate as a magnetic sensing part is a Hall element or a magnetic sensor. An integrated magnetic sensor, which is a resistance element.

More preferably, the present invention relates to a magnetic sensor having a magnetically sensitive portion made of a compound semiconductor thin film exhibiting n-type conductivity containing In and formed on an insulating layer formed on a Si substrate. And a heat-resistant metal thin film such as Ta, Mo, W, Ti, Ni, etc., or an alloy thereof, a laminated thin film, or an integrated circuit having heat-resistant wiring using low-resistance polysilicon or the like. A control circuit including an amplifier circuit for amplifying an output is integrated on the same Si substrate, and the magnetic sensor and the control circuit are electrically connected to each other by a wiring made of a metal thin film. It is a magnetic sensor.

Still more preferably, the present invention relates to a magnetic sensor having a magnetically sensitive portion comprising an n-type conductive compound semiconductor thin film containing In formed on an insulating layer formed on a Si substrate. A magnetic sensor comprising a heat-resistant metal thin film such as Ta, Mo, W, Ti, and Ni having a melting point, an alloy thereof, a laminated thin film, and an integrated circuit having heat-resistant wiring using low-resistance polysilicon and the like. A control circuit including an amplifier circuit for amplifying the output of the integrated circuit is integrated on the same Si substrate, and the interconnections and the like are electrically connected to each other by the wiring made of the heat-resistant metal thin film. Magnetic sensor.

Further, the output form from the control circuit of the integrated magnetic sensor of the present invention corresponds to the operation shown in FIG. 5 in which two low-level and high-level voltages corresponding to detection and non-detection of a magnetic field are output. A digital output having the following is preferably used. Further, a control circuit that can obtain a linear output that can obtain an output voltage proportional to the detected magnetic field is also preferably used.

The integrated magnetic sensor of the present invention is manufactured by a process having conditions that do not destroy the control circuit of the magnetic sensor manufactured on the Si substrate. Such a magnetic sensor manufacturing process of the present invention is also a feature of the present invention.

That is, the integrated magnetic sensor of the present invention
The control circuit of the magnetic sensor is provided on a part of the Si
Manufacturing process by the C process technology, then covering the entire surface of the Si substrate with an insulating layer,
a step of forming a compound semiconductor thin film serving as a magnetically sensitive portion at a heating temperature of 250 to 500 ° C. on the i-substrate; Further, it is manufactured by a process including at least a process of opening a plurality of windows in a required portion and wiring a metal thin film for electrically connecting the control circuit unit and the electrodes of the magnetic sensor.

Preferably, the integrated magnetic sensor according to the present invention includes a transistor, a diode, a capacitor, a resistance element, which constitutes a control circuit of the magnetic sensor on a part of the Si substrate.
Steps for manufacturing elements essential for forming a control circuit such as an inductance element, and then Ta, Mo, W, Ti, N
Heat-resistant wires and element electrodes using high-melting-point heat-resistant metals such as i, Pt, Pd and the like, alloys thereof, laminated thin films, low-resistance polysilicon, and magnetic sensors manufactured in a later step To manufacture electrodes for connecting to the outside and the outside,
An IC process for manufacturing a control circuit including a step of forming an insulating layer between these wirings and between the element electrodes, opening a window in the insulating layer to enable electrical connection at the time of wiring, and then Si
Covering the entire surface of the substrate with an insulating layer. The ultra-high vacuum (5 × 10 ⁻⁷ Torr; degree of vacuum of 6.6 × 10 ⁻⁵ Pa or less) is applied to the Si substrate at 250 to 500 ° C. Forming a compound semiconductor thin film to be a magnetically sensitive portion at a heating temperature in the range of, forming a Hall element or a magnetoresistive element pattern as a magnetic sensor while leaving only a required portion of the thin film, A plurality of elements of the present invention are manufactured on a Si substrate by a process including at least a process of forming a plurality of windows and wiring a metal thin film for electrically connecting a control circuit unit and an electrode of a magnetic sensor. . Further, after being cut into individual element chips in the dicing step, the integrated magnetic sensor of the present invention is manufactured in a resin package through an element assembling step such as a die bonding wire bonding step and a transfer molding step.

Preferably, the integrated magnetic sensor according to the present invention includes a transistor, a diode, a capacitor, a resistor, and a transistor constituting a control circuit of the magnetic sensor on a part of the Si substrate.
Steps for manufacturing elements essential for forming a control circuit such as an inductance element, and then Ta, Mo, W, Ti, N
Heat-resistant wires and element electrodes using high-melting-point heat-resistant metals such as i, Pt, Pd and the like, alloys thereof, laminated thin films, low-resistance polysilicon, and magnetic sensors manufactured in a later step To manufacture electrodes for connecting to the outside and the outside,
An IC process for manufacturing a control circuit including a step of forming an insulating layer between these wirings and between the element electrodes, opening a window in the insulating layer to enable electrical connection at the time of wiring, and then Si
Covering the entire surface of the substrate with an insulating layer, forming a compound semiconductor thin film serving as a magnetically sensitive part on the surface of the insulating layer under ultra-high vacuum at a heating temperature in the range of 250 to 500 ° C. Manufacturing a Hall element or a magnetoresistive element pattern which is a magnetic sensor while leaving only a required part of the above, and further, a plurality of windows are opened in a required part to electrically connect a control circuit part and an electrode of the magnetic sensor. At least including a step of forming a wiring made of a metal thin film for use.

Preferably, the integrated magnetic sensor according to the present invention includes a transistor, a diode, a capacitor, a resistor, and a transistor constituting a control circuit of the magnetic sensor on a part of the Si substrate.
Steps for manufacturing elements essential for forming a control circuit such as an inductance element, and then Ta, Mo, W, Ti, N
Heat-resistant wirings and element electrodes using high-melting-point heat-resistant metals such as i, Pt, Pd and the like, alloys thereof, laminated thin films, low-resistance polysilicon, etc., and magnetic sensors manufactured in a later step To manufacture electrodes for connecting to the outside and the outside,
An IC process for manufacturing a control circuit including a step of forming an insulating layer between these wirings and between the element electrodes, opening a window in the insulating layer to enable electrical connection at the time of wiring, and then Si
Covering the entire surface of the substrate with an insulating layer containing an oxide of Si, wherein the insulating layer is formed of a compound semiconductor GaxIn1-xSbyAs1.
-Y (0 ≦ x ≦ 1, 0 ≦ y ≦ 1) and GaxAl1-
a step of forming an insulating layer or an insulating thin layer including at least one insulating layer composed of xSbyAs1-y (0 ≦ x ≦ 1, 0 ≦ y ≦ 1), and then forming an ultra-high vacuum on the surface of the insulating layer. A step of forming a compound semiconductor thin film serving as a magnetically sensitive portion on a Si substrate at a heating temperature in the range of 250 to 500 ° C., and forming a Hall element or a magnetoresistive element pattern as a magnetic sensor while leaving only a required portion of the thin film. It is manufactured by a process including at least a manufacturing process and a process of forming a plurality of windows in a required portion and wiring a metal thin film for electrically connecting the control circuit unit and the electrodes of the magnetic sensor. Further, a plurality of devices of the present invention are manufactured on one Si substrate. Further, after being cut into individual element chips in the dicing step, the integrated magnetic sensor of the present invention is manufactured in a resin package through an element assembling step such as a die bonding wire bonding step and a transfer molding step.

Further, a step of manufacturing a control circuit of the magnetic sensor on a part of the Si substrate by a standard IC process technique, a step of covering the entire surface of the Si substrate with an insulating layer, To form a compound semiconductor thin film serving as a magnetically sensitive portion at a heating temperature in the range of 250 to 500 ° C.
A step of doping at least one kind of donor atom such as Si, Sn, Te, Ce, S, Ge, etc., which is a type impurity, and fabricating a Hall element or a magnetoresistive element pattern as a magnetic sensor while leaving only a required portion of the thin film. It is manufactured through a process and a process including at least a process of opening a plurality of windows in required portions and wiring a metal thin film for electrically connecting the control circuit unit and the electrodes of the magnetic sensor.

More preferably, a step of manufacturing a control circuit of the magnetic sensor on a part of the Si substrate by a standard IC process technique, a step of covering the entire surface of the Si substrate with an insulating layer, and a step of sensing the surface of the insulating layer. A step of forming a thin film insulating layer made of a compound semiconductor having a lattice constant close to or the same as that of the magnetic layer thin film under ultra-high vacuum, under ultra-high vacuum on the thin film compound semiconductor thin-film, at 250 to 500 ° C. A step of forming a compound semiconductor thin film to be a magnetically sensitive portion at a heating temperature in a range, a step of fabricating a Hall element or a magnetoresistive element pattern as a magnetic sensor while leaving only a required portion of the thin film, Is manufactured through a process including at least a process of opening a window and wiring a metal thin film for electrically connecting the control circuit unit and the electrode of the magnetic sensor.

Further, Ta, M
Control of a magnetic sensor composed of an integrated circuit having heat-resistant wiring using high-melting heat-resistant metals such as o, W, Ti, Ni, Pt, and Pd, alloys thereof, laminated thin films, and low-resistance polysilicon. A step of manufacturing a circuit by a standard IC process technology, and then a step of covering the entire surface of the Si substrate with an insulating layer. On the insulating layer, under an ultra-high vacuum, a magnetically sensitive portion is formed at a heating temperature in the range of 250 to 500 ° C. A step of forming a compound semiconductor thin film and doping at least one kind of donor atoms such as Si, Sn, Te, Ce, S, and Ge, which are n-type impurities, and a Hall element which is a magnetic sensor while leaving only a required portion of the thin film Alternatively, Ta, Mo, W, Ti, and N for electrically connecting the control circuit unit and the electrodes of the magnetic sensor by opening a plurality of windows at required portions and manufacturing a magnetoresistive element pattern.
It is manufactured through a step including at least a step of wiring a high-melting-point heat-resistant metal thin film of i, Pt, Pd, or the like, or a plurality of metal thin-film layers containing these high-melting-point metals.

More preferably, in the integrated magnetic sensor of the present invention, a control circuit of the magnetic sensor is provided on a part of the Si substrate.
a. Magnetic sensor composed of an integrated circuit having heat-resistant wiring using high-melting-point heat-resistant metal such as a, Mo, W, Ti, Ni, Pt, and Pd, an alloy thereof, a laminated thin film, and low-resistance polysilicon. Manufacturing the control circuit by the standard IC process technology, then covering the entire surface of the Si substrate with an insulating layer, and using a compound semiconductor having a lattice constant close to or equal to the magnetosensitive layer thin film on the surface of the insulating layer. Forming a thin film insulating layer under ultra-high vacuum, forming a compound semiconductor thin film serving as a magnetically sensitive part on the thin film compound semiconductor thin-film insulating layer under ultra-high vacuum at a heating temperature in the range of 250 to 500 ° C. A step of manufacturing a Hall element or a magnetoresistive element pattern which is a magnetic sensor while leaving only a required portion of the thin film, and further opening a plurality of windows in the required portion to allow a gap between the control circuit portion and the electrode of the magnetic sensor. Electrically Gutame of Ta, Mo, W, Ti,
It is manufactured through a process including at least a process of wiring a metal thin film of Ni, Pt, Al, or the like (high-melting-point heat resistance) or a plurality of metal thin-film layers containing these high-melting metals.

The magnetic sensor of the present invention manufactured through such a process is often packaged for convenience of application, but this case is also within the scope of the present invention.

Further, according to the present invention, the integrated magnetic sensors can be manufactured one by one,
It can be easily manufactured on an i-substrate. The integrated magnetic sensor of the present invention is packaged with an epoxy resin or the like, and the resin molding process can use a general method used for packaging electronic components. Transfer molding using a thermosetting resin such as an epoxy resin or an injection method using a thermoplastic resin is a preferable method.

[0047]

Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is a configuration diagram of a Si substrate chip on which an integrated magnetic sensor of the present invention is manufactured. FIG. 1 shows a Hall IC, which is an example of an integrated magnetic sensor manufactured on a Si substrate 1 of the present invention, when viewed from above. FIG. Hall element 2 which is a magnetic sensor (hereinafter, a portion 2 surrounded by a broken line)
Is referred to as a “magnetic sensor section”), a control circuit section 3 (portion surrounded by a broken line) manufactured as an integrated circuit including an amplifier circuit for amplifying the output voltage of the Hall element, and a plurality of metal thin films connecting them. Wiring 4 (shown by a thick solid line)
i is placed on the insulating layer formed on the surface of the substrate. Also, three electrode portions 5 (1), 5 (2), 5 (3)
Is an electrode for external connection (eg, Au or A on the surface)
1) A wire bonding electrode having a thin film formed thereon.

Reference numeral 5 (1) denotes a terminal for supplying a drive voltage to the magnetic sensor unit 2 and the control circuit unit 6, 5 (2) is a ground terminal electrode, and 5 (3) is detected by the magnetic sensor unit 2. This is a terminal electrode of a sensor output obtained as a result of amplifying a signal output corresponding to a magnetic field by the control circuit unit 3.

FIG. 2 is a block diagram showing an example of a control circuit section of the integrated magnetic sensor which is a digital output in FIG. 1. Reference numeral 3 (1) denotes an analog amplifier section, and 3 (2) denotes a Schmitt trigger section. Reference numeral 3 (3) indicates an output transistor.
FIG. 6 shows typical operating characteristics.

Although not shown here, in the integrated magnetic sensor of the present invention, a linear output type control circuit capable of obtaining an amplified output proportional to the magnetic field detected by the magnetic sensor is also possible in the present invention.

FIGS. 3 (a), 3 (b) and 3 (c) are views showing cross sections of various integrated magnetic sensors, and FIG.
In the sectional view taken along line A1-A2 of the Hall element, the layer 6 indicated by oblique lines is an insulating layer on the surface of the Si substrate 1, and 7 is a compound having a high electron mobility constituting the Hall element as a magnetic sensor. It is a semiconductor layer.

FIG. 3B is a cross-sectional view of another integrated magnetic sensor according to the present invention, showing an example having a passivation layer 8 formed on a compound semiconductor layer for surface protection. .

FIG. 3C shows still another collection according to the present invention.
Cross-sectional view of integrated magnetic sensor, Si substrate indicated by oblique lines
FIG. 2 shows an example in which a plurality of insulating layers 6 are provided on the surface
Reference numeral 6 (1) denotes an inorganic insulating layer containing oxygen.
(2) is a compound semiconductor insulating layer. Insulating layer 6
(2) is a compound semiconductor Ga_xIn_1-xSb_y
As _1-y(0 ≦ x ≦ 1, 0 ≦ y ≦ 1) insulating layer
And one atom required for InSb to grow as a single crystal
Provides a layer-level flat surface. Compound semiconductor
The edge layer maintains electrical insulation between the Si substrate and the magnetic sensor.
There is also an effect.

FIGS. 4A and 4B show an example of a packaged structure of the integrated magnetic sensor according to the present invention, wherein FIG. 4A is a plan view and FIG. 4B is a sectional view. Reference numeral 9 denotes a resin, for example, of a package, 10 denotes a lead,
Reference numeral 1 denotes a wire connecting the electrode 5 and the lead on the Si substrate. The integrated magnetic sensor of the present invention is used in a package as described above, and the package is not limited to this embodiment, and various packages are possible.

The arrangement of the IC control circuit section 3 and the magnetic sensor section 2 of the integrated magnetic sensor of the present invention is not particularly limited, but the magnetic sensor section 2 (for example, a Hall element) is arranged at the center of the chip, and its periphery is arranged. The control circuit unit 3 may be arranged so as to surround the control circuit unit 3. The control circuit unit 3 may be arranged at two or more locations. Further, in the present invention, the number of magnetic sensors may be one, but may be plural depending on the purpose. It is also preferable to arrange two magnetic sensors in the magnetic sensor unit 2 to obtain a differential output. In addition, multiple Hall elements are often used in magnetic sensors for purposes such as rotation detection, and multiple magnetoresistive elements are often connected to a bridge to provide high-precision differential output. is there. It is also preferable that a plurality of Hall elements constitute a magnetic sensor unit.

The substrate surface of Si is preferably as flat as possible and flat at the level of one atomic layer in order to manufacture a compound semiconductor thin film magnetic sensor. In the magnetic sensor of the present invention, an insulating layer may be formed on a Si integrated circuit, and a compound semiconductor magnetic sensor may be manufactured thereon. Further, the Si substrate used in the integrated magnetic sensor of the present invention is preferably a substrate on which an IC can be manufactured.

The control circuit used in the integrated magnetic sensor of the present invention is manufactured by standard or customized IC technology such as bipolar, MOS, CMOS, and the like. Although not particularly limited, the surface of the manufactured IC circuit portion has at least one inorganic protective layer with a plurality of windows opened for connection to an external circuit outside the chip. Further, the magnetic sensor used in the integrated magnetic sensor of the present invention can be manufactured under crystal growth conditions at a substrate temperature of 500 ° C. or less.
Is composed of a metal compound semiconductor.
In some cases, n or Sn of As is included. For example, a thin film of InAs or a thin film of InSb is preferably used. Its surface is covered with a protective film and has a plurality of protective layers with windows opened for connection to external circuits outside the chip.

The integrated magnetic sensor of the present invention may be packaged like a normal magnetic sensor to form a sensor.

The Hall element and the magnetoresistive element which are the magnetic sensors of the integrated magnetic sensor of the present invention may be any Hall elements and magnetoresistive elements made of a compound semiconductor containing In.
The magnetic sensing part is a thin layer or a thin film. InSb thin film, In
An As thin film or a thin layer of InGaAs is preferably used. Further, an ultra-thin film is preferably used, and InAs, InAsSb, InSb, or the like having a high electron mobility is interposed through an insulating layer of a high-resistance or insulating compound semiconductor having a large band gap and a lattice constant close to or the same as these materials. It is manufactured on a Si substrate. Further, a similar material may be formed on the magnetic sensing portion to form a sandwiched structure.

In particular, a Hall element using a single crystal thin film obtained by doping InAs or InSb with Si or Sn as a magnetic sensing portion is preferably used. The electron density of the Hall element using the thin film of InSb or InAs as a magnetic sensing part is 1.5 × 10 ¹⁶
/ Cm ³ to 1 × 10 ¹⁸ / cm ³ is preferably used as the magnetic sensor of the integrated magnetic sensor of the present invention. Further, from 3.5 × 10 ¹⁶ / cm ³ to 6 × 10 ¹⁷
/ Cm ³ is preferably used as the magnetic sensor of the integrated magnetic sensor of the present invention. Also, 6 × ^{10 1} 6 / c
The range of m ³ to 4 × 10 ¹⁷ / cm ³ is particularly preferable as the magnetic sensor of the integrated magnetic sensor of the present invention has a small temperature dependency of the sensor signal and has a practically optimum range of sensitivity to a magnetic field.

FIG. 5 is a flowchart for explaining the manufacturing process of the integrated magnetic sensor of the present invention.
Steps (S1) and 2 (S2) are standard IC
It is a manufacturing process. The magnetic sensor according to the present invention is characterized in that steps 3 (S3) to 6 (S6) are newly added.

First, a magnetic sensor control circuit element is manufactured on a Si substrate (S1). Here, a Si circuit element is manufactured by an IC process such as thermal diffusion or ion implantation. Next, heat-resistant wiring between circuit elements is performed (S2). here,
Includes formation of contact holes, formation of conductive thin films, formation of wiring patterns between electrodes and between elements. Next, a magnetic sensor is manufactured (S3). Here, 1) an insulating layer is entirely formed on a Si substrate. 2) An InSb semiconductor thin film is formed under an ultra-high vacuum. 3) The magnetic sensor element is manufactured by InSb thin film patterning. Next, wiring between the Hall element and the control circuit is performed (S4). Here, processes such as metal film formation and wiring pattern formation are included.

Next, a passivation film (insulating film) is formed (S5). Next, a bonding electrode is formed (S
6). Here, an electrode section window is opened and an Au thin film is formed. Next, a plurality of integrated magnetic sensors are manufactured on a Si substrate (S
7). Next, dicing is performed to separate the individual integrated magnetic sensors into chips (S8). Next, die bonding (S9) is performed to perform wire bonding (S1).
0). Next, transfer molding is performed (S1).
1). Here, deburring and tie bar cutting are performed. Finally, the packaged integrated magnetic sensor is completed (S1).
2).

FIG. 6 is a graph showing the operating characteristics of the integrated magnetic sensor according to the present invention, in which a magnetic field is applied (ON) and not applied (OF).
F) The output voltage is low level, high level 2
It is a figure showing the example of the digital output which takes a value. That is, this is an example showing the characteristics of the digital output of the control circuit unit shown in FIG. A magnetic density higher than Bop is applied to the magnetic sensor unit (O
N), the voltage Vout of the output terminal 5 (3) changes from the high level H to the low level L. Conversely, when the applied magnetic flux decreases and is equal to or less than Brp (OFF), the voltage of the output terminal 5 (3) changes from a low level L to a high level H. That is, such operating characteristics include operating magnetic densities Bop and Brp, and a hysteresis Bh (= B
op-Brp).

[Trial Production Example 1] A part of the surface of a 4-inch diameter Si substrate having a thickness of 0.6 mm (except for a part for manufacturing a magnetic sensor) was formed by a standard method shown in steps 1 and 2 in FIG. Na IC
In the manufacturing process, a digital output Hall element control circuit having the circuit configuration shown in FIG. 2 was manufactured. Its operating characteristics are shown in FIG.
Indicated. The output voltage Vout changes from a high level H to a low level L by applying a magnetic field of a magnetic flux density Bop or more,
When the applied magnetic field decreases and the magnetic flux density is lower than Brp, the low level L
To a high level H.

That is, this is a digital output magnetic sensor in which the output voltage takes two values of a high level and a low level in response to a change in the magnetic field. When Bop> Brp, Bop-B
rp = Bh is the hysteresis of the operating magnetic field. As shown in FIG. 1, a Hall element, which is a magnetic sensor, is disposed at the tip of the chip, and a control circuit section of the IC is disposed adjacent to the chip element. A circuit having a digital output amplifier that outputs a low-level voltage close to zero voltage and a high-level voltage almost equal to the power supply voltage in response to the detection and non-detection of the magnetic field of the present invention.

Next, plasma CVD is performed on the entire surface of the Si substrate.
Protection of IC circuits and silicon nitride 0.2 μm and 2 μm as an insulating layer under the compound semiconductor thin film to be grown next.
Two insulating layers of 0.8 micron silicon oxide were formed. Next, the Si wafer can be evacuated to an ultra-high vacuum.
A molecule having a crystal growth chamber, a preheating chamber, and a substrate introduction chamber capable of holding an ultra-high vacuum of 1 × 10 ⁻⁸ Torr or less even in a substrate heated state of 00 ° C. or more, and a substrate holder capable of setting a plurality of 4-inch substrates. The crystal growth chamber of the line epitaxial apparatus was evacuated to an ultra-high vacuum in advance.

Further, with the shutter of each molecular beam source closed, the evaporation source of In, Sb, and impurity Sn was heated to set a temperature at which a molecular beam can be obtained during crystal growth. The wafer was transported into the crystal growth chamber of the molecular beam epitaxy apparatus in a state where the temperature was set to a predetermined standby temperature without breaking vacuum. After a predetermined substrate preheating, at the substrate heating temperature of 400 ° C. (estimated from the correlation with the indicated temperature of the thermocouple of the substrate heater), the shutters of the evaporation sources of In, Sn and doped Sn are opened. Open and grow InSb thin film for 60 minutes,
During the growth, InSb was doped with Sn as an n-type impurity. 1.0 μm of InSb doped with Sn
grown. After the completion of the crystal growth, the Si substrate was taken out and the characteristics of the grown InSb thin film were measured.
× 10 ¹⁶ cm ⁻³ and electron mobility of 32,000 cm /
Vs characteristics were shown.

Next, a required resist film was formed by a photolithography process, and unnecessary portions of the InSb thin film were removed by wet etching with a dilute hydrochloric acid solution containing ferric chloride. Subsequently, two insulating layers of 0.25 μm of silicon nitride and 0.8 μm of silicon dioxide were formed on the entire surface by plasma CVD so as to cover the InSb surface. Next, a required pattern is formed by a photolithography process, and a plurality of electrodes for connecting to the electrode element and the wiring section of the Hall element and the Hall element of the control circuit section, which is an IC, and for external connection. The electrode was opened with a reactive dry etching method. Next, a photoresist mask is formed by photolithography, and Cu (0.3 μ
m), Ni (0.3 μm), and Au (0.5 μm) in this order, and a wire bonding electrode portion for wiring and external connection between the Hall element and the IC control circuit portion by a lift-off method. In addition, necessary wiring parts and the like were manufactured.

In this way, 1.5 mm
A corner integrated magnetic sensor of the present invention was fabricated. Next, the integrated magnetic sensor was cut by a dicing layer to manufacture individual integrated magnetic sensor chips.

The chip is placed on the island portion of the lead by a die bonder, and then wire bonding is performed. Then, a small amount of silicon resin is coated on the surface of the Si chip on which the Hall element and the IC have been manufactured. Thus, an integrated magnetic sensor of the present invention packaged with an epoxy resin was manufactured. Despite the use of a compound semiconductor Hall element for a magnetic sensor, it was easy to manufacture with one chip and downsized, and productivity was particularly easy to assemble.

In particular, there was a concern that the Si IC control circuit would be deteriorated because it was exposed to a high temperature of 400 ° C. for about one hour, but no significant deterioration of the control circuit of the manufactured integrated magnetic sensor was observed. Was.

Such an integrated magnetic sensor of the present invention uses an InSb Hall element having high sensitivity and a small temperature dependency of the Hall voltage for the first time in a magnetic sensor section.
It is a digital magnetic sensor having high sensitivity and hysteresis in the operating magnetic field, and exhibits stable operation characteristics with little change in hysteresis and changes in Bop and Brp from a low temperature of −40 ° C. to a high temperature of 100 ° C. or more. When operated with a power supply voltage of 12V, the high level of the output voltage is 12V,
The low level was 0.4 V or less. The maximum of Bop is 2
0mT, minimum of Brp is 5mT, Bh is minimum of 5m
It was T.

In particular, since the magnetic sensor portion uses InSb with little temperature dependence, the temperature stability of hysteresis is excellent, and it is extremely stable against external stress.

[Trial Production Example 2] An integration having a wiring between elements made of a Pt thin film on a part of a surface of a 4-inch diameter Si substrate having a thickness of 0.6 mm (except for a part for manufacturing a magnetic sensor). The circuit was manufactured on a Si substrate by a standard (including photolithography, diffusion, etching, formation of electrode metal, etc.) IC process according to the prototype example 1, and a digital output Hall element control circuit was manufactured. As shown in FIG. 1, a Hall element, which is a magnetic sensor, is arranged at the tip of the chip, and a control circuit section of the IC is arranged adjacent to the chip.
The control circuit amplifies the Hall voltage, and includes a digital output amplifier that outputs a low-level voltage close to zero voltage and a high-level voltage substantially equal to the power supply voltage in response to detection or non-detection of a magnetic field equal to or greater than the threshold value. Was made.

Next, plasma CVD is performed on the entire surface of the Si substrate.
Protection of IC circuits and silicon nitride 0.2 μm and 2 μm as an insulating layer under the compound semiconductor thin film to be grown next.
Two insulating layers of 0.8 micron silicon oxide were formed. Next, the Si wafer can be evacuated to an ultra-high vacuum.
A molecule having a crystal growth chamber, a preheating chamber, and a substrate introduction chamber capable of holding an ultra-high vacuum of 1 × 10 ⁻⁸ Torr or less even in a substrate heated state of 00 ° C. or more, and a substrate holder capable of setting a plurality of 4-inch substrates. The crystal growth chamber of the line epitaxial apparatus was evacuated to an ultra-high vacuum in advance.

Further, with the shutter of each molecular beam source closed, the evaporation source of In, Sb, and impurity Sn was heated to a temperature at which a molecular beam could be obtained at the time of crystal growth. The wafer was transported into the crystal growth chamber of the molecular beam epitaxy apparatus in a state where the temperature was set to a predetermined standby temperature without breaking vacuum. After a predetermined preheating of the substrate, at a substrate heating temperature of 400 ° C. (estimated from the correlation with the indicated temperature of the thermocouple of the substrate heater), the shutters of the evaporation sources of In, Sn, and Sn to be doped are opened. The InSb thin film was grown for 60 minutes after opening, and during the growth, InSb was doped with Sn as an n-type impurity. Thus, Sn-doped InSb was grown to 1.0 μm. After the completion of the crystal growth, the Si substrate was taken out, and the characteristics of the grown InSb thin film were measured.
10 ¹⁶ cm ⁻³ , electron mobility 32,000 cm / V
The characteristic of s was shown.

Next, a required resist film was formed by a photolithography process, and unnecessary portions of the InSb thin film were removed by etching with a dilute hydrochloric acid solution containing ferric chloride. continue,
Two insulating layers of 0.2 μm of silicon nitride and 0.8 μm of silicon dioxide were formed on the entire surface by plasma CVD so as to cover the InSb surface. Next, a required pattern is formed by a photolithography process, and a plurality of electrodes for connecting to the electrode element and the wiring section of the Hall element and the Hall element of the control circuit section, which is an IC, and for external connection. The electrode was opened with a reactive dry etching method.

Next, a photoresist mask is formed by photolithography, and Cu (0.3 μm)
m), Ni (0.3 μm), Au (0.5 μm) in that order, and a wire bonding electrode for wiring and external connection between the Hall element and the IC control circuit by lift-off method, etc. The necessary wiring parts and the like were manufactured.

In this way, 1.5 mm on the Si substrate
A corner integrated magnetic sensor of the present invention was fabricated. Next, the integrated magnetic sensor was cut by a dicing layer to manufacture individual integrated magnetic sensor chips.

The chip is placed on the lead island portion by a die bonder, and then wire bonding is performed. Then, a small amount of silicon resin is coated on the surface of the Si chip on which the Hall element and the IC have been manufactured. Thus, an integrated magnetic sensor of the present invention packaged with an epoxy resin was manufactured. Despite the use of a compound semiconductor Hall element for a magnetic sensor, it was easy to manufacture with one chip and downsized, and productivity was particularly easy to assemble.

In particular, there was concern that the Si IC control circuit would be deteriorated because it was exposed to a high temperature of 400 ° C. for about one hour, but no significant deterioration of the control circuit of the manufactured integrated magnetic sensor was observed. Was.

The integrated magnetic sensor of the present invention uses, for the first time, an InSb Hall element having high sensitivity and little dependence of Hall voltage on temperature for the magnetic sensor section.
It is a digital magnetic sensor with high sensitivity and hysteresis in the operating magnetic field, and exhibited stable operation characteristics from a low temperature of −40 ° C. to a high temperature of 100 ° C. or more.

In particular, since the magnetic sensor portion uses InSb with little temperature dependency, the temperature stability of hysteresis was excellent and the device was extremely stable against external stress. In other words, there is no hysteresis or large temperature fluctuation of the operating magnetic field,
It showed stable operation.

[Trial Production Example 3] A digital output hole was formed on a part of the surface of the Si substrate having a thickness of 0.6 mm (except for a part for manufacturing a magnetic sensor) by a standard IC process according to Trial Production Example 1. An element control circuit was fabricated. As shown in FIG. 1, a Hall element, which is a magnetic sensor, is disposed at the tip of the chip, and a control circuit section of the IC is disposed adjacent to the chip element. A circuit having a digital output amplifier that outputs a low-level voltage close to zero voltage and a high-level voltage almost equal to the power supply voltage in response to the detection and non-detection of the magnetic field of the present invention.

Next, plasma CVD is performed on the entire surface of the Si substrate.
Protection of IC circuits and silicon nitride 0.2 μm and 2 μm as an insulating layer under the compound semiconductor thin film to be grown next.
Two insulating layers of 0.8 micron silicon oxide were formed. Next, the Si wafer can be evacuated to an ultra-high vacuum.
A molecule having a crystal growth chamber, a preheating chamber, and a substrate introduction chamber capable of holding an ultra-high vacuum of 1 × 10 ⁻⁸ Torr or less even in a substrate heated state of 00 ° C. or more, and a substrate holder capable of setting a plurality of 4-inch substrates. The crystal growth chamber of the line epitaxial apparatus was evacuated to an ultra-high vacuum in advance.

Further, with the shutter of each molecular beam source closed, the evaporation source of In, Sb, and impurity Sn was heated to set a temperature at which a molecular beam could be obtained during crystal growth. The wafer was transported into the crystal growth chamber of the molecular beam epitaxy apparatus in a state where the temperature was set to a predetermined standby temperature without breaking vacuum. After a predetermined substrate preheating, at the substrate heating temperature of 400 ° C. (estimated from the correlation with the indicated temperature of the thermocouple of the substrate heater), the shutters of the evaporation sources of In, Sn and doped Sn are opened. Open and grow InSb thin film for 60 minutes,
During the growth, InSb was doped with Sn as an n-type impurity. 1.0 μm of InSb doped with Sn
grown. After completion of the crystal growth, the Si substrate was taken out, and the characteristics of the grown InSb thin film were measured. The electron concentration was 1.0 × 10 ¹⁷ cm ⁻³ and the electron mobility was 28,000.
cm / Vs.

Next, a required resist film was formed by a photolithography process, and unnecessary portions of the InSb thin film were removed by etching with a dilute hydrochloric acid solution containing ferric chloride. Subsequently, two insulating layers of 0.2 μm of silicon nitride and 0.8 μm of silicon dioxide were formed on the entire surface by plasma CVD so as to cover the InSb surface. Next, a required pattern is formed by a photolithography process, and a plurality of electrodes for connecting to the electrode element and the wiring section of the Hall element and the Hall element of the control circuit section, which is an IC, and for external connection. The electrode was opened with a reactive dry etching method.

Next, a photoresist mask is formed by photolithography, and Cu (0.3 μm) is formed on the entire surface.
m), Ni (0.3 μm), Au (0.5 μm) in that order, and a wire bonding electrode for wiring and external connection between the Hall element and the IC control circuit by lift-off method, etc. The necessary wiring parts and the like were manufactured.

In this way, 1.5 mm
A corner integrated magnetic sensor of the present invention was fabricated. Next, the integrated magnetic sensor was cut by a dicing layer to manufacture individual integrated magnetic sensor chips.

The chip is placed on the lead island portion by a die bonder, wire bonding is performed, a small amount of silicon resin is coated on the surface of the Si chip on which the Hall element and the IC have been manufactured, and after curing, transfer molding is performed. An integrated magnetic sensor of the present invention packaged with an epoxy resin was manufactured. Despite the use of a compound semiconductor Hall element for a magnetic sensor, it was easy to manufacture with one chip and downsized, and productivity was particularly easy to assemble.

In particular, there was a concern that the Si IC control circuit would be deteriorated because it was exposed to a high temperature of 400 ° C. for about one hour. However, no significant deterioration of the control circuit of the manufactured integrated magnetic sensor was observed. Was.

Such an integrated magnetic sensor of the present invention uses an InSb Hall element having high sensitivity and little temperature dependency of Hall voltage for the first time in a magnetic sensor section.
It is a digital magnetic sensor with high sensitivity and hysteresis in the operating magnetic field, and exhibited stable operation characteristics from a low temperature of −40 ° C. to a high temperature of 100 ° C. or more.

In particular, since the magnetic sensor portion uses InSb having little temperature dependency, the temperature stability of hysteresis was excellent and the device was extremely stable against external stress.

As described above, the present invention has shown that an integrated magnetic sensor using a compound semiconductor as a magnetic sensor can be manufactured for the first time by manufacturing an IC control circuit portion of Si and a Hall element of InSb on the same Si substrate.

[Trial Production Example 4] On a part of the surface of a Si substrate having a thickness of 0.6 mm (except for a part for manufacturing a magnetic sensor), a digital output magnetic field was produced by a standard IC process according to Trial Production Example 1. The control circuit of the resistance element was manufactured. Then, Si
Silicon nitride is deposited on the entire surface of the substrate by plasma CVD.
Two insulating layers of 2 microns and 0.8 microns of silicon dioxide were formed. In this prototype example, the same device as that used in trial example 1 was used. After the operation according to the prototype example 1, the Si wafer was carried into a molecular beam epitaxy apparatus, and the substrate was heated at 400 ° C. for 60 minutes to form an InSb thin film of 1.1 μm.
Then, an InSb single crystal thin film doped with Sn was grown. As a result of taking out from the crystal growth chamber and measuring, the electron concentration was 1.0 × 10 ¹⁷ cm ⁻³ and the electron mobility was 30,0.
A characteristic of 00 cm / Vs was exhibited.

Next, a required resist film was formed by a photolithography process, and unnecessary portions of the InSb thin film were removed by etching with a dilute hydrochloric acid solution containing ferric chloride. Subsequently, 0.2 μm of silicon nitride and 0.1 μm of silicon dioxide were formed on the entire surface by plasma CVD so as to cover the InSb surface.
Two 8 micron insulating layers were formed. Next, a required pattern is formed by a photolithography process, and a plurality of electrodes for connecting with the electrode portion and the wiring portion of the short bar electrode of the magnetoresistive element and the magnetoresistive element of the control circuit portion which is an IC. The electrodes for external connection were opened with a reactive dry etching method.

Next, a photoresist mask is formed by photolithography, and Cu (0.3 μm) is formed on the entire surface.
m), Ni (0.3 μm), and Au (0.5 μm) in this order, and a lift-off method for short bar electrodes of the magnetoresistive element and wiring between the magnetoresistive element and the IC control circuit and for external connection. Electrodes for wire bonding and other necessary interconnections were manufactured.

In this way, 1.5 mm
A 3.0 mm integrated magnetic sensor of the present invention was fabricated.
Next, the integrated magnetic sensor is cut by the dicing layer,
Individual integrated magnetic sensor chips were fabricated.

The chip is placed on the lead island portion by a die bonder, and then wire bonding is performed. A small amount of silicon resin is coated on the surface of the Si chip on which the magnetoresistive element and the IC are manufactured, and after curing, transfer molding is performed. Then, an integrated magnetic sensor of the present invention having a package size of 1.2 mm, a length and width of 4 mm × 4 mm, and three leads made of epoxy resin was manufactured. Despite the use of a compound semiconductor Hall element for a magnetic sensor, it was easy to manufacture with one chip and downsized, and productivity was particularly easy to assemble.

In particular, there was a concern that the Si IC control circuit would be deteriorated because it was exposed to a high temperature of 400 ° C. for about one hour, but no significant deterioration of the control circuit of the manufactured integrated magnetic sensor was observed. Was.

Such an integrated magnetic sensor of the present invention has a high sensitivity and an I / O resistance of which the resistance value has little temperature dependency.
High-sensitivity, digital output magnetic sensor with hysteresis in the operating magnetic field using the nSb magnetoresistive element for the first time in the magnetic sensor unit. It has stable operation characteristics from a low temperature of -40 ° C to a high temperature of 100 ° C or more. Indicated.

In particular, since the magnetic sensor portion uses InSb having little temperature dependency, the temperature stability of hysteresis was excellent, and it was extremely stable against external stress.

Further, when a bias magnetic field of 0.3 Tesla was applied and the integrated magnetic sensor of the present invention detected teeth of an iron gear, a stable digital output was obtained.

[Trial Production Example 5] On a part of the surface of a Si substrate having a thickness of 0.6 mm (except for a part for manufacturing a magnetic sensor), the resistance value changes with the movement of a parallel magnetic field, and the differential A control circuit including an amplifying circuit having a refractory metal inter-element wiring for amplifying the differential output of four magnetoresistive elements constituting a Wheatstone bridge in which an element pattern is designed to obtain an output is standard. Fabricated by CMOS IC process. Next, 0.2 μm of silicon nitride and 0.8 μm of silicon dioxide are formed on the entire surface of the Si substrate by plasma CVD.
Two micron insulating layers were formed.

In this example, the same apparatus as used in example 1 was used. After the operation according to the prototype example 1, the S
The i-wafer is carried into a molecular beam epitaxy apparatus, and the substrate is heated at 400 ° C. for 60 minutes to form InS doped with Sn.
The b thin film was grown at 1.1 μm. As a result of taking out from the crystal growth chamber and measuring, the produced InSb thin film has an electron concentration of 1.0.
× 10 ¹⁷ cm ⁻³ , electron mobility 30,000 cm /
Vs characteristics were shown.

Next, a required resist film was formed by a photolithography process, and unnecessary portions of the InSb thin film were removed by wet etching with a dilute hydrochloric acid solution containing ferric chloride. Subsequently, two insulating layers of 0.2 μm of silicon nitride and 0.8 μm of silicon dioxide were formed on the entire surface by plasma CVD so as to cover the InSb surface. Next, a required pattern is formed by a photolithography process, and a plurality of electrodes for connecting with the electrode portion and the wiring portion of the short bar electrode of the magnetoresistive element and the magnetoresistive element of the control circuit portion which is an IC. The electrodes for external connection were opened with a reactive dry etching method.

Next, a photoresist mask is formed by photolithography, and Cu (0.3 μm) is formed on the entire surface.
m), Ni (0.3 μm), and Au (0.5 μm) in this order, and a lift-off method for short bar electrodes of the magnetoresistive element and wiring between the magnetoresistive element and the IC control circuit and for external connection. Electrodes for wire bonding and other necessary interconnections were manufactured.

In this manner, 2.0 mm
A 3.0 mm integrated magnetic sensor of the present invention was fabricated.
Next, the integrated magnetic sensor was cut by a dicing layer to manufacture individual integrated magnetic sensor chips.

The chip is placed on the lead island portion by a die bonder, then wire-bonded, a small amount of silicon resin is coated on the surface of the Si chip on which the magnetoresistive element and the IC have been manufactured, cured, and then transfer-molded. Then, an integrated magnetic sensor of the present invention having a package size of 1.2 mm, a length and width of 4 mm × 4 mm, and three leads made of epoxy resin was manufactured. Despite the use of a compound semiconductor magnetoresistive element for a magnetic sensor, it was easy to manufacture and miniaturized with a single chip, and productivity was particularly easy to assemble.

As described above, the resistance value changes with the movement of the parallel magnetic field, and the four magneto-resistive elements and the four magneto-resistive elements which constitute the Wheatstone bridge in which the element pattern is designed to obtain the differential output. An integrated magnetic sensor for gear detection according to the present invention was manufactured in which a control circuit including an amplifier circuit for amplifying a differential output when a magnetic field of the element was applied was manufactured on the same surface of Si.

In particular, there was a concern that the Si IC control circuit would be deteriorated because it was exposed to a high temperature of 400 ° C. for about one hour, but no significant deterioration of the control circuit of the manufactured integrated magnetic sensor was observed. Was.

Such an integrated magnetic sensor of the present invention has a high sensitivity and an I / O resistance with a small temperature dependence of the resistance value.
High-sensitivity, digital output magnetic sensor with hysteresis in the operating magnetic field using the nSb magnetoresistive element for the first time in the magnetic sensor unit. It has stable operation characteristics from a low temperature of -40 ° C to a high temperature of 100 ° C or more. Indicated.

In particular, since the magnetic sensor portion uses InSb having little temperature dependency, the temperature stability of hysteresis was excellent, and it was extremely stable against external stress. 0.
When the teeth of the iron gear were detected by the integrated magnetic sensor of the present invention by applying a bias magnetic field of 3 Tesla, a stable digital output was obtained stably from the stopped state (zero speed) of the gear to a high speed.

[Trial Production Example 6] On a part of the surface of a Si substrate having a thickness of 0.6 mm (except for a part for manufacturing a magnetic sensor), a Hall element was fabricated by a standard IC process according to Trial Production Example 1. A control circuit including a Hall voltage amplifier circuit for a Hall element that linearly amplifies and outputs a Hall voltage was manufactured according to the arrangement shown in FIG. Next, two insulating layers of silicon nitride 0.2 μm and silicon dioxide 0.8 μm were formed on the entire surface of the Si substrate by a plasma CVD method.

In this example, the same apparatus as used in example 1 was used. After the operation according to the prototype example 1, the S
The i-wafer is carried into a molecular beam epitaxy apparatus, and Sn-doped In is heated at a substrate heating temperature of 400 ° C. for 60 minutes.
An Sb thin film was grown to 1.0 μm. As a result of taking out and measuring from the crystal growth chamber, the produced InSb thin film has an electron concentration of 7 ×
10 ¹⁶ cm ⁻³ , electron mobility 32,000 cm / V
The characteristic of s was shown.

Next, a required resist film was formed by a photolithography process, and unnecessary portions of the InSb thin film were removed by wet etching with a dilute hydrochloric acid solution containing ferric chloride. Subsequently, two insulating layers of silicon nitride and silicon dioxide were formed on the entire surface by plasma CVD so as to cover the InSb surface. Next, a required pattern is formed by a photolithography process, and a plurality of electrodes for connecting to the electrode element and the wiring section of the Hall element and the Hall element of the control circuit section, which is an IC, and for external connection. The electrode was opened with a reactive dry etching method.

Next, a photoresist mask is formed by photolithography, and Cu (0.3 μm) is formed on the entire surface.
m), Ni (0.3 μm), Au (0.5 μm) in that order, and a wire bonding electrode for wiring and external connection between the Hall element and the IC control circuit by lift-off method, etc. The necessary wiring parts and the like were manufactured.

In this way, 1.5 mm
A corner integrated magnetic sensor of the present invention was fabricated. Next, the integrated magnetic sensor was cut by a dicing saw to manufacture individual integrated magnetic sensor chips.

The chip is placed on the island portion of the lead by a die bonder, and then wire bonding is performed. Then, a small amount of silicon resin is coated on the surface of the Si chip on which the Hall element and the IC have been manufactured, and after curing, transfer molding is performed. Thus, an integrated magnetic sensor of the present invention packaged with an epoxy resin was manufactured. Despite the use of a compound semiconductor Hall element for a magnetic sensor, it was easy to manufacture with one chip and downsized, and productivity was particularly easy to assemble.

In particular, there was a concern that the Si IC control circuit would be deteriorated because it was exposed to a high temperature of 400 ° C. for about one hour, but no significant deterioration of the control circuit of the manufactured integrated magnetic sensor was observed. Was.

The integrated magnetic sensor of the present invention uses, for the first time, an InSb Hall element having high sensitivity and little temperature dependency of the Hall voltage in the magnetic sensor section.
High sensitivity and stable output in proportion to the detected magnetic field can be obtained. Also, due to the circuit design, the offset voltage can be kept low when driven by 6V input, and the magnetic flux density can be reduced to zero.
An amplified output voltage proportional to the magnetic field of 0 to 5 V was obtained corresponding to the change of T to 0.02T.

[0123]

As described above, according to the present invention, S
A control including a magnetic sensor using a compound semiconductor thin film showing n-type conductivity containing In and the like containing In and the like formed on an insulating layer formed on an i-substrate as a magnetic sensing part, and an amplifier circuit for amplifying an output of the magnetic sensor Since the circuit and the circuit are integrated on the same Si substrate, the Si
It was possible to obtain an integrated magnetic sensor in which a compound semiconductor thin film having a high electron mobility serving as a magnetic sensing part was manufactured on a substrate.

[Brief description of the drawings]

FIG. 1 is a diagram showing a basic configuration of an integrated magnetic sensor of the present invention.

FIG. 2 is a diagram illustrating a control circuit unit in FIG. 1;

3A and 3B are cross-sectional structural views of Hall elements as various magnetic sensors. FIG. 3A is a cross-sectional view taken along line A1-A2 of FIG. 1, and FIG. 3B is a cross-sectional view illustrating an example in which a passivation layer is formed. (C) is a cross-sectional view when two insulating layers are formed.

4A and 4B are diagrams showing a packaged structure of the integrated magnetic sensor of the present invention, wherein FIG. 4A is a plan view and FIG. 4B is a cross-sectional view.

FIG. 5 is a flowchart for explaining a manufacturing process of the integrated magnetic sensor of the present invention.

FIG. 6 is a diagram showing operating characteristics of the integrated magnetic sensor according to the present invention, in which a digital output whose output voltage takes two values of a low level and a high level in response to application (ON) and non-application (OFF) of a magnetic field; It is a figure showing the example of.

[Explanation of symbols]

 Reference Signs List 1 Si substrate 2 Magnetic sensor (Hall element) 3 Control circuit section 4 Wiring 5 (1), 5 (2), 5 (3) Electrode section 6, 6 (1), 6 (2) Insulating layer 7 Compound semiconductor layer 8 Passivation layer 9 package 10 lead 11 wire

Claims (12)

[Claims] 1. A magnetic sensor using a compound semiconductor thin film having In-containing n-type conductivity and containing an n-type conductive material formed on an insulating layer formed on a Si substrate as a magnetic sensing portion, and amplifying an output of the magnetic sensor. An integrated magnetic sensor, wherein a control circuit including an amplifier circuit is integrated on the same Si substrate. 2. A magnetic sensor using a compound semiconductor thin film having n-type conductivity and containing In and Sb formed on an insulating layer formed on a Si substrate as a magnetic sensing part, and an output of the magnetic sensor. The control circuit including the amplifying circuit for amplifying
An integrated magnetic sensor which is integrated on a substrate. 3. A magnetic sensor using a compound semiconductor thin film having n-type conductivity containing InSb and formed on an insulating layer formed on a Si substrate as a magnetic sensing part, and amplifying an output of the magnetic sensor. An integrated magnetic sensor, wherein a control circuit including an amplifier circuit is integrated on the same Si substrate. 4. The semiconductor device according to claim 1, wherein the insulating layer is a compound semiconductor Ga _x In.
According to _{1-x Sb y As 1 -y} (0 ≦ x ≦ 1,0 ≦ y ≦ 1) an insulating layer or high resistance layer made of, characterized in that it comprises at least one layer according to claim 1, 2 or 3 Integrated magnetic sensor. 5. The magnetic sensor and a control circuit according to claim 1, wherein
2. The semiconductor device according to claim 1, wherein the conductive film is electrically connected to the i-substrate by a conductive metal thin film wired via an insulating layer.
An integrated magnetic sensor according to any one of claims 1 to 4. 6. The magnetic sensor includes In manufactured on an insulating layer formed on the Si substrate, and at least a small amount of impurities such as donor atoms such as Si, Sn, Te, Ce, S, and Ge. 2. The method according to claim 1, further comprising:
6. The integrated magnetic sensor according to any one of claims 1 to 5. 7. The integrated magnetic sensor according to claim 1, wherein the magnetic sensor is a Hall element or a magnetoresistive element. 8. The magnetic sensor according to claim 1, wherein the magnetic sensor is a digital output having an operation of outputting two low-level or high-level voltages corresponding to detection or non-detection of a magnetic field. An integrated magnetic sensor according to any one of the above. 9. The integrated magnetic sensor according to claim 1, wherein the control circuit outputs a voltage proportional to a magnetic field detected by the magnetic sensor. 10. A magnetic sensor having a compound semiconductor thin film as a magnetic sensing part on an insulating layer formed on a Si substrate, and a control circuit including an amplifier circuit for amplifying an output of the magnetic sensor are formed on the same Si substrate. A method of manufacturing a control circuit of a magnetic sensor on a part of the Si substrate by a standard IC process technology, and a method of manufacturing an integrated magnetic sensor integrated on a whole surface of the Si substrate. Covering the surface of the insulating layer with an ultra-high vacuum on the surface of the insulating layer.
Forming a compound semiconductor thin film to be a magnetically sensitive part at a heating temperature in the range of up to 500 ° C., forming a pattern of the magnetic sensor while leaving only a required portion of the compound semiconductor thin film; Making a plurality of windows in the part, and providing at least a step of wiring a metal thin film for electrically connecting between the control circuit and the electrode of the magnetic sensor. Production method. 11. The method according to claim 10, wherein the step of forming the compound semiconductor thin film includes a step of doping at least one kind of donor atoms such as n-type impurities Si, Sn, Te, Ce, S, and Ge. 3. The method for manufacturing an integrated magnetic sensor according to claim 1. 12. After the step of covering with an insulating layer, a thin film insulating layer made of a compound semiconductor whose lattice constant is close to or the same as that of the magnetosensitive layer thin film is formed on the surface of the insulating layer under ultra-high vacuum. 12. The method according to claim 10, further comprising the step of:
3. The method for manufacturing an integrated magnetic sensor according to claim 1.