JPH0936050A - Normal pressure cvd device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a normal pressure CVD device which shorten an internal cleaning time and inhibits the adhesion of a reactive by-product. SOLUTION: There are provided a cover 9, which opens and closes a through hole 8a which introduces a reactive gas 6 for a surface processing into a reactive chamber 1, which houses a semiconductor board 2 and processes the surface of the semiconductor board 2 and an exhaust air opening 5 which exhausts the interior of the reactive chamber 1, thereby providing a normal pressure CVD device which is capable of sucking up and exhausting a reactive by-product in the reactive chamber by closing the through hole 8a and facilitating a cleaning treatment and shortening the cleaning time and enhancing a processing capacity and inhibiting the reactive by-product from being deposited on the semiconductor board 2 and enhancing the yield of the semiconductor.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an atmospheric pressure CVD apparatus for forming a thin film on a semiconductor substrate.

[0002]

2. Description of the Related Art FIG. 10 is a sectional view showing a conventional atmospheric pressure CVD apparatus (a CVD apparatus for forming a film in an atmospheric pressure atmosphere). In FIG. 10, 1 is a closed reaction chamber, 2 is a reaction chamber 1, and a semiconductor substrate whose surface faces downward is shown. 3 is a heat equalizing plate for closely fixing the semiconductor substrate 2 and making heat uniform. Four
Is a heater for supplying heat to the soaking plate 3, 5 is an exhaust port for exhausting the inside of the reaction chamber 1, 6 is a reaction gas to be supplied, 7 is a gas mixing chamber for mixing the reaction gas 6, and 8 is the reaction chamber 1. Gas mixing chamber 7
And a diffusion head plate 8a interposed between
Is a through hole for introducing the reaction gas 6 mixed in the gas mixing chamber 7 into the reaction chamber 1, and 20 is a generated reaction by-product.

Next, the operation will be described. Gas mixing chamber 7
Is supplied with, for example, a silane-based or oxygen-based reaction gas 6,
The reaction gas 6 mixed in the gas mixing chamber 7 blows into the reaction chamber 1 through the through hole 8a. The semiconductor substrate 2 closely fixed to the soaking plate 3 heated by the heater 4 causes a thermochemical reaction by the reaction gas 6, and a reaction product (not shown) is deposited on the surface of the semiconductor substrate 2 to form a thin film. Perform membrane treatment. The exhaust port 5 constantly exhausts the inside of the reaction chamber 1, and the reaction gas 6 remaining without the thermochemical reaction and the reaction by-product 20 generated by the thermochemical reaction are exhausted obliquely upward from the exhaust port 5. To be done. After that, the semiconductor substrate 2 is replaced with the semiconductor substrate 2 to be subjected to the film forming process next, and the film forming process is similarly performed on the exchanged semiconductor substrate 2.

Next, the operation of sucking and exhausting the reaction by-product 20 will be described. When the film forming process is repeatedly performed, the reaction by-product 20 is gradually deposited in the reaction chamber 1 (for example, the upper surface of the diffusion head plate 8) or the gas mixing chamber 7, and thus the reaction by-product 20 is regularly deposited. Cleaning for removal is required.
For example, a certain number of semiconductor substrates 2 (for example, 1
000 to 1500 sheets) and then normal pressure CV
D device is stopped, the reaction chamber 1 and the gas mixing chamber 7 are opened,
A person uses the hose of the dust collector to suck in the reaction by-product 20, and a person uses alcohol or the like to wipe the reaction by-product 20 for cleaning.

After cleaning, replacement of the semiconductor substrate 2 is started and the film forming process is started again.

[0006]

Since the conventional atmospheric pressure CVD apparatus is constructed as described above, the atmospheric pressure C is periodically maintained.
Since the cleaning is performed after the VD device is stopped or the cleaning is performed by a person, the cleaning time becomes long, and the processing capacity of how many semiconductor substrates 2 can be film-formed within a certain period is lowered. In addition, the reaction product in the reaction chamber 1 rises up, and the reaction by-product 20 in the gas mixing chamber 7 rises up through the through hole 8a, and is deposited on the semiconductor substrate 2 to serve as a reaction by-product in the thin film. However, there is a problem that the yield of semiconductors decreases.

The present invention has been made to solve the above-mentioned problems, and it is possible to reduce the deposition of reaction by-products in the reaction chamber and the gas mixing chamber and to shorten the cleaning time to reduce the processing capacity. It is an object of the present invention to provide an atmospheric pressure CVD apparatus which improves the yield of semiconductors by suppressing the adhesion of reaction by-products to the semiconductor substrate.

[0008]

According to a first aspect of the present invention, there is provided a reaction chamber for accommodating a semiconductor substrate to perform a surface treatment of the semiconductor substrate, and a reaction chamber used for the surface treatment. A diffusion head plate provided with a large number of through holes for introducing a reaction gas into the reaction chamber, an exhaust port for exhausting the reaction chamber, and a lid for opening and closing the through holes.

[0009] The means for solving the problem according to claim 2 of the present invention is:
A gas mixing chamber for mixing a reaction gas, which is connected to the reaction chamber through the through hole, and an exhaust unit for exhausting the gas mixing chamber are further provided.

In the means for solving the problems according to claim 3 of the present invention, the plurality of through-holes are provided on a straight line radiating outward from the center of the diffusion head plate, and the lid covers the diffusion head plate. A large number of gas blowout holes, which have a covering shape and are provided so as to respectively communicate with the plurality of through holes, are provided, and can rotate about the center.

The problem solving means according to claim 4 of the present invention is
Driving means for rotating the lid to open and close the through hole is provided.

In the means for solving the problem according to claim 5 of the present invention, the lid further comprises an exhaust hole provided in an upper surface of the lid, and an exhaust means for exhausting the reaction chamber through the exhaust hole is further provided. Prepare

In the means for solving the problem according to claim 6 of the present invention, the exhaust hole is provided in substantially the entire upper surface of the lid except the gas outlet hole.

[0014]

BEST MODE FOR CARRYING OUT THE INVENTION

Embodiment 1. 1 is a sectional view showing an atmospheric pressure CVD apparatus according to Embodiment 1 of the present invention. In FIG. 1, 9 is a lid for opening and closing the through hole 8a, and other reference numerals are the same as in FIG.
It corresponds to each code in 0.

Next, the operation will be described. The film forming operation is similar to that of the conventional apparatus shown in FIG. That is, the reaction gas 6 such as a silane-based or oxygen-based reaction gas is supplied to the gas mixing chamber 7, and the reaction gas 6 mixed in the gas mixing chamber 7 is passed through the through hole 8
It blows out into the reaction chamber 1 through a. The semiconductor substrate 2 closely fixed to the soaking plate 3 heated by the heater 4 causes a thermochemical reaction by the reaction gas 6, and a reaction product (not shown) is deposited on the surface of the semiconductor substrate 2 to form a thin film. Perform membrane treatment. The exhaust port 5 constantly exhausts the inside of the reaction chamber 1, and the reaction gas 6 remaining without the thermochemical reaction and the reaction by-product 20 generated by the thermochemical reaction are exhausted obliquely upward from the exhaust port 5. To be done. After that, the semiconductor substrate 2 is replaced with the semiconductor substrate 2 to be subjected to the film forming process next, and the film forming process is similarly performed on the exchanged semiconductor substrate 2.

Next, the operation of sucking and exhausting the reaction by-product 20 will be described. When the film forming process is repeatedly performed, the reaction by-product 20 is gradually deposited in the reaction chamber 1 (for example, the upper surface of the diffusion head plate 8) or the gas mixing chamber 7, and thus the reaction by-product 20 is regularly deposited. A cleaning process for removal is required. For example, after the film forming process is performed on a certain number of semiconductor substrates 2 (for example, 1000 to 1500), the replacement of the semiconductor substrates 2 is stopped, and the lid 9 closes and fixes the through hole 8a. Then, by the exhaust port 5, the reaction chamber 1
The reaction by-product 20 therein is sucked and exhausted.

After suction and exhaust for a certain period of time, the through hole 8a is opened by the lid 9, and after completion, the exchange of the semiconductor substrate 2 is started and the film forming process is started again.

As described above, in this embodiment, by providing the lid for opening and closing the through hole, the reaction by-product in the reaction chamber 1 can be sucked and exhausted, facilitating the cleaning process,
The cleaning time is shortened and the processing capacity is improved,
Further, it is possible to obtain an atmospheric pressure CVD apparatus capable of improving the yield of semiconductors by suppressing the reaction by-products from adhering to the semiconductor substrate.

As shown in FIG. 1, the through holes 8a are closed by the respective lids 9. However, since it is sufficient that the through holes can be opened and closed, one plate-like lid is used to close and fix the through holes 8a. May be.

Embodiment 2 2 is a sectional view showing an atmospheric pressure CVD apparatus (CVD apparatus for forming a film in an atmospheric pressure atmosphere) according to Embodiment 2 of the present invention. In FIG. 2, 1
0 is a switching valve for exhausting the inside of the gas mixing chamber 7, 11 is an exhaust unit for exhausting, for example, a vacuum pump, and other reference numerals correspond to the reference numerals in FIG. Further, the switching valve 10 and the exhaust unit 11 constitute exhaust means.

The main operation is the same as in the first embodiment. In the present embodiment, in the operation of sucking and exhausting the reaction by-product 20 described in the first embodiment, the exhaust unit 11
When the specified exhaust capacity is reached, the switching valve 10, which is normally closed, is opened. Since the through hole 8a is closed and fixed by the lid 9 as described above, the reaction byproduct 20 in the gas mixing chamber 7 is also sucked and exhausted by the exhaust unit 11.

After suction and exhaust for a certain period of time, the through hole 8a is opened by the lid 9, and after completion, the exchange of the semiconductor substrate 2 is started and the film forming process is started again.

As described above, in this embodiment, since the reaction product 20 in the gas mixing chamber is also sucked and exhausted by providing the exhaust means for exhausting the gas mixing chamber, the cleaning process is facilitated and cleaning is performed. Atmospheric pressure C that shortens the time to perform and improves the processing capacity, and also suppresses the adhesion of reaction by-products to the semiconductor substrate to improve the yield of semiconductors.
A VD device is obtained.

Embodiment 3. 3 is a sectional view showing an atmospheric pressure CVD apparatus according to Embodiment 3 of the present invention. In FIG. 3, 12 is provided to open and close the through hole 8a,
A cover 12a having a shape covering the diffusion head plate 8 and rotatable about the center of the diffusion head plate 8 as a plurality of through holes 8a.
a gas outlets provided so as to communicate with a, 1
3 is a rotation lever for rotating the lid 12 at an angle,
The other reference numerals correspond to the reference numerals in FIG. FIG.
5 is a top view of the lid 12 of the atmospheric pressure CVD apparatus according to the third embodiment, and FIG. 5 is a cross-sectional view taken along the broken line ABC in FIG. As shown in FIGS. 4 and 5, a plurality of through holes 8a are arranged on a straight line radiating from the center B of the diffusion head plate 8 to the outside, and the gas outlet holes 12a are communicated with the plurality of through holes 8a, respectively. Is provided. The plurality of through holes 8a arranged on the straight line described above are arranged from the center B along the radiation of each phase (for example, 45 degrees).

The main operation is similar to that of the first embodiment, and this embodiment is characterized by the lid that closes the through hole 8a. First, when the reaction gas 6 is introduced into the reaction chamber 1 from the gas mixing chamber 7, the through hole 8a and the gas blowout hole 12a are in communication with each other. When closing the through hole 8a, the lid 12 is rotated by, for example, 22.5 degrees by the rotary lever 13 to close the through hole 8a.

The positions and the number of the gas outlets 12a are shown as an example, and other positional relationships and numbers may be used.

As described above, in the present embodiment, a plurality of through holes are arranged on a straight line radiating from the center of the diffusion head plate to the outside, and the lid is shaped to cover the diffusion head plate and communicates with the plurality of through holes. By having the gas outlet holes provided as described above and being able to rotate about the center of the diffusion head plate 8,
The through-hole 8a can be easily closed, and the atmospheric pressure CVD apparatus in which the cleaning time is shortened and the throughput is improved can be obtained.

Fourth Embodiment FIG. 6 is a diagram showing a driving means for rotating the lid of the atmospheric pressure CVD apparatus according to the fourth embodiment of the present invention. In FIG. 6, 14 is a driving means such as an air cylinder or a motor for rotationally driving the lid 12 (the gas blowing hole 12a is not shown) via the rotary lever 13 for opening and closing the through hole 8a, and other components. Each code is
It corresponds to each code in FIG.

The main operation is similar to that of the third embodiment, and in this embodiment, the lid 12 for closing the through hole 8a is rotationally driven by the driving means 14.

As described above, in the present embodiment, since the driving means is provided, it is possible to automatically and rotationally drive about the center, so that the through hole 8a can be automatically closed.
It is possible to obtain an atmospheric pressure CVD apparatus in which the cleaning time is shortened and the throughput is improved.

Embodiment 5. FIG. 7 is a sectional view showing an atmospheric pressure CVD apparatus according to Embodiment 5 of the present invention. In FIG. 7, 15 is an exhaust hole provided on the upper surface of the lid 12, 16
Is an exhaust groove connected to the exhaust hole 15 and 10 is an exhaust hole 1
A switching valve for exhausting the inside of the reaction chamber 1 through 5 and the exhaust groove 16, an exhaust unit 11 for exhausting a vacuum pump or the like, and other reference numerals correspond to the reference numerals in FIG. FIG. 8 is a top view of the lid 12 of the atmospheric pressure CVD apparatus according to the fifth embodiment, and FIG. 9 is a broken line ABC in FIG.
It is sectional drawing along. Each symbol in FIGS. 8 and 9 corresponds to each symbol in FIGS. 7, 4 and 5.

Although not shown in FIG. 7, the groove 1
Reference numeral 6 is connected to each exhaust hole 15. Further, as shown in FIG. 8, the grooves 16 are provided below the exhaust holes 15 arranged in a line extending radially of the lid 12, and as shown in FIG. 9, the grooves 16 and respective exhaust holes are provided. 15 is connected.

The main operation is similar to the operation in the third embodiment. When the through-hole 8a is closed by the lid 12, when the exhaust unit 11 is activated and the predetermined exhaust capacity is reached, the normally closed switching valve 10 is opened to deposit on the lid 12 or in the exhaust hole 15. Reaction by-product 2
0 is sucked and exhausted through the exhaust groove 16.

After suction and exhaust for a certain period of time, the through hole 8a is opened by the lid 9, and after completion, the exchange of the semiconductor substrate 2 is started and the film forming process is started again.

The positions and the numbers of the gas blowout holes 12a, the exhaust holes 15, and the exhaust grooves 16 are shown as an example, and other positional relationships and numbers may be used.

Further, as in the second embodiment, exhaust means for exhausting the inside of the gas mixing chamber 7 may be provided. In this case, the exhaust means for exhausting the reaction chamber 1 through the exhaust groove 16 and the exhaust hole 15 and the exhaust means for exhausting the gas mixing chamber 7 may be the same, or may be independently provided. Good.

Further, as in the fourth embodiment, drive means 14 for rotating the lid 12 may be provided.

As described above, in this embodiment, by providing the exhaust hole on the upper surface of the lid and the exhaust means for exhausting the reaction chamber through the exhaust hole, the reaction by-product deposited on the upper surface of the lid and the exhaust hole is formed. Atmospheric pressure C capable of improving the semiconductor yield by suppressing the adhesion of reaction by-products to the semiconductor substrate by sucking and exhausting
A VD device is obtained.

Embodiment 6 FIG. In the present embodiment, the exhaust holes 15 shown in FIG. 9 are provided as many as possible on the upper surface of the lid 12 other than the gas outlet holes 12a. This suppresses the deposition of the reaction by-product 20 on the upper surface of the lid 12. Therefore, the more the exhaust holes 15 are provided on the upper surface of the lid 12 except the gas outlets 12a, the more the reaction by-product 20 is prevented from being deposited on the upper surface of the lid 12. An atmospheric pressure CVD apparatus capable of improving the yield of semiconductors by suppressing the reaction by-products from adhering to the semiconductor substrate can be obtained.

[Brief description of drawings]

FIG. 1 is a sectional view showing an atmospheric pressure CVD apparatus according to a first embodiment of the present invention.

FIG. 2 is a sectional view showing an atmospheric pressure CVD apparatus according to a second embodiment of the present invention.

FIG. 3 is a sectional view showing an atmospheric pressure CVD apparatus according to a third embodiment of the present invention.

FIG. 4 is a top view showing a lid of an atmospheric pressure CVD apparatus according to Embodiment 3 of the present invention.

FIG. 5 is a sectional view showing a lid of an atmospheric pressure CVD apparatus according to a third embodiment of the present invention.

FIG. 6 is a sectional view showing an atmospheric pressure CVD apparatus according to Embodiment 4 of the present invention.

FIG. 7 is a sectional view showing an atmospheric pressure CVD apparatus according to a fifth embodiment of the present invention.

FIG. 8 is a top view showing a lid of an atmospheric pressure CVD apparatus according to Embodiment 5 of the present invention.

FIG. 9 is a sectional view showing a lid of an atmospheric pressure CVD apparatus according to Embodiment 6 of the present invention.

FIG. 10 is a sectional view showing a conventional atmospheric pressure CVD apparatus.

[Explanation of symbols]

1 reaction chamber, 2 semiconductor substrate, 3 uniform heating plate, 4 heater, 5 exhaust port, 6 reaction gas, 7 gas mixing chamber, 8
Diffusion head plate, 8a through hole, 20 reaction by-product, 9
Lid, 10 switching valve, 11 exhaust unit, 12
Lid, 12a Gas blowout hole, 13 Rotating lever, 14 Driving means, 15 Exhaust hole, 16 Exhaust groove, 20 Reaction by-product.

Claims (6)

[Claims] 1. A reaction chamber for accommodating a semiconductor substrate and performing a surface treatment of the semiconductor substrate, and a plurality of through holes for introducing a reaction gas used for the surface treatment into the reaction chamber. Atmospheric pressure CVD provided with a diffusion head plate, an exhaust port for exhausting the reaction chamber, and a lid for opening and closing the through hole.
apparatus. 2. A gas mixing chamber for mixing a reaction gas, the gas mixing chamber being connected to the reaction chamber through the through hole, and an exhaust unit for exhausting the gas mixing chamber. The atmospheric pressure CVD apparatus described. 3. The plurality of through holes are provided on a straight line that radiates outward from the center of the diffusion head plate, and the lid has a shape that covers the diffusion head plate. The atmospheric pressure CVD apparatus according to claim 1, further comprising a plurality of gas outlets provided so as to communicate with each other, and capable of rotating around the center. 4. The atmospheric pressure C according to claim 3, further comprising drive means for rotationally driving the lid to open and close the through hole.
VD device. 5. The atmospheric pressure CVD apparatus according to claim 3, wherein the lid further comprises an exhaust hole provided on an upper surface of the lid, and an exhaust means for exhausting the reaction chamber through the exhaust hole. . 6. The atmospheric pressure CVD apparatus according to claim 5, wherein the exhaust hole is provided in substantially the entire upper surface of the lid except the gas outlet hole.