CN112992743B

CN112992743B - Semiconductor process chamber and semiconductor process equipment

Info

Publication number: CN112992743B
Application number: CN202110532137.1A
Authority: CN
Inventors: 黄其伟
Original assignee: Beijing Naura Microelectronics Equipment Co Ltd
Current assignee: Beijing Naura Microelectronics Equipment Co Ltd
Priority date: 2021-05-17
Filing date: 2021-05-17
Publication date: 2021-09-17
Anticipated expiration: 2041-05-17
Also published as: CN112992743A

Abstract

The invention provides a process chamber in semiconductor process equipment and the semiconductor process equipment, wherein the process chamber comprises a chamber body, an air inlet device and a base arranged in the chamber body, the air inlet device comprises a plurality of air inlet pipelines, the air inlet pipelines are arranged around the base and are all positioned below the base, and each air inlet pipeline is provided with a flow control mechanism. According to the invention, by designing the air inlet device, the process gas can be more accurately controlled and dispersed in the process chamber, and the gas movement in the process area is more uniform, so that the influence of cold pump offset on the gas flow movement in the process chamber is eliminated, and the purposes of improving the uniformity of the deposited film, enhancing the process capability of equipment and improving the product quality are achieved.

Description

Semiconductor process chamber and semiconductor process equipment

Technical Field

The invention relates to the technical field of semiconductor manufacturing, in particular to a process chamber in semiconductor process equipment and the semiconductor process equipment.

Background

In the research of integrated circuits, copper is attracting much attention as an integrated circuit lead instead of aluminum. In order to prevent copper from diffusing in silicon and silicon oxide and reacting with silicon, a diffusion barrier layer is usually added between copper and the circuit. The metal nitride (such as TaN/TiN) has excellent thermal stability, good conductivity, high melting point and higher lattice and grain boundary stability, thereby becoming the preferred material of the diffusion barrier layer.

The use of PVD magnetron sputtering to deposit metal nitride films (e.g., TaN/TiN) has many advantages: the method has the advantages that the process is simple, the repeatability is good, the film with high crystallization rate can be obtained when the temperature of the substrate is low, the film prepared by the method generally has a good epitaxial film structure, and the thickness of the film can be controlled by sputtering parameters; in addition, the film has good compactness, high purity and high deposition efficiency. However, when PVD magnetron sputtering is used, the stoichiometric specific volume of metal and nitrogen in the metal nitride film is easily affected by hardware conditions, such as the Process kit (Process Kits) size and cold pump pumping speed, and the resistivity is very unstable when TaN is deposited.

The chamber structure of a PVD apparatus in the prior art is shown in fig. 1, and includes a target 1, a chamber 2, a gas inlet 8, a cold pump 9, and a cold pump gate valve 10, wherein the gas inlet 8 is disposed at one side of the bottom of the chamber 2, and the cold pump 9 is disposed at the other side of the bottom of the chamber 2 opposite to the gas inlet 8. The cavity 2 is also internally provided with a base 7, a support platform 6 which is positioned on the base 7 and used for bearing a wafer 5, an inner liner 3 and a clamping ring 4, wherein the inner liner 3 and the clamping ring 4 are used for protecting the inner wall of the cavity and the cold pump from sputtering pollution. Before the sputtering process is started, the base 7 is driven by the motor to rise to a process position, Ar/N serving as process gas enters the cavity from the gas inlet 8, and the process pressure required in the cavity is maintained together with the pumping action of the cold pump 9. The air flow in the cavity enters the cavity 2 from the air inlet 8 and enters the process area above the base 7 through the bent air flow channel between the lining 3 and the clamping ring 4, different air flows are arranged on the two sides, close to the air inlet 8 and the cold pump 9, of the base 7, the direction and the speed of the air movement in the process area above the base 7 are uneven, the uniformity of the thickness of a deposited film is affected, and the stoichiometric ratio of metal and nitrogen in the metal nitride film is easily affected by the change of the pumping speed of the cold pump, so that the resistivity is unstable. In addition, limited by the existing chamber structure and air intake method, a large amount of Ar/N is directly pumped away by the cold pump 9 after entering the chamber 2, and only a small amount of process gas enters the process area above the pedestal 7 through the bent gas flow channel between the liner 3 and the clamp ring 4, which results in higher process cost.

In view of the above, the present invention is particularly proposed.

Disclosure of Invention

In order to solve at least one of the above technical problems, the present invention provides a process chamber in semiconductor process equipment and semiconductor process equipment, wherein a gas inlet device is designed to enable process gas to be more accurately controlled and dispersed in the process chamber, and the gas movement in a process area is more uniform, so that the influence of cold pump offset on the gas flow movement in the process chamber is eliminated, the instability of resistivity caused by the influence of the process kit size and the change of the pumping speed of a cold pump on the stoichiometric ratio of metal and nitrogen in a metal nitride film is avoided, and the purposes of improving the uniformity of a deposited film, enhancing the process capability of the equipment and improving the product quality are achieved.

In order to achieve the above object, the present invention provides a process chamber in semiconductor process equipment, including a chamber body, an air inlet device, and a base disposed inside the chamber body, where the air inlet device includes a plurality of air inlet pipelines disposed around the base and all located below the base, and each air inlet pipeline is provided with a flow control mechanism for controlling the flow of gas entering the air inlet pipeline.

Preferably, the air inlet pipe is vertically arranged on the bottom wall of the chamber body in a penetrating way.

Preferably, the air inlet device further comprises a plurality of lifting mechanisms, the plurality of lifting mechanisms and the plurality of air inlet pipelines are arranged in a one-to-one correspondence manner, and the lifting mechanisms are used for driving the air inlet pipelines to move up and down. The height of each air inlet pipeline is adjusted by controlling the lifting mechanism, namely the distance between the port of the air inlet pipeline and the base is adjusted by adjusting the height of the air inlet pipeline extending into the chamber body, so that the layout of the longitudinal area of the process gas in the process chamber is adjusted.

Preferably, the lifting mechanism is arranged on the bottom wall in a penetrating way and is connected with the bottom wall in a sealing way; the air inlet pipeline penetrates through the lifting mechanism and is in sealing connection with the lifting mechanism.

Preferably, the air inlet pipeline comprises a hard pipe section and a soft pipe section, the hard pipe section is arranged in the lifting mechanism in a penetrating mode and is connected with the lifting mechanism in a sealing mode, the hard pipe section is partially located inside the chamber body and partially located outside the chamber body, the soft pipe section is located outside the chamber body, one end of the soft pipe section is communicated with the end, located outside the chamber body, of the hard pipe section, and the other end of the soft pipe section is communicated with the flow control mechanism. The hose section is favorable for the lifting mechanism to drive the air inlet pipeline to move up and down.

Preferably, a plurality of the air inlet pipes are uniformly distributed in a circular ring shape. The base includes the pedestal and supports the support column of pedestal, the pedestal with the support column is coaxial, many the intake pipeline is followed the pedestal is in the projection of cavity body bottom is followed vertical even setting to make process gas more easily get into base top process area through the air current passageway of buckling between inside lining and the snap ring.

Preferably, the flow control mechanism is a Mass Flow Controller (MFC).

Preferably, the air inlet device further comprises a mixed air path and at least two process air paths, and the mixed air path is communicated with the air inlet pipeline and the process air paths. The process gas circuit is used for transmitting different process gases, and the mixed gas circuit is used for premixing the process gases transmitted by the different process gas circuits and transmitting the mixed gas to the gas inlet pipeline.

More preferably, the mixed gas path comprises a main gas mixing pipe, a gas inlet branch pipe and a plurality of gas outlet branch pipes, and the gas inlet branch pipe and the plurality of gas outlet branch pipes are communicated with the main gas mixing pipe; the air outlet branch pipes are in one-to-one correspondence with the air inlet pipelines, the air outlet branch pipes are communicated with the air inlet pipelines through the flow control mechanisms, and at least two process air paths are communicated with the air inlet branch pipes.

The invention also provides semiconductor processing equipment comprising the process chamber.

Compared with the prior art, the invention has the following beneficial effects:

according to the process chamber provided by the invention, the problem of uneven air flow in the process chamber is solved to a certain extent by the arrangement mode that the plurality of air inlet pipelines surround the base, a large amount of process gas can be prevented from being directly pumped away by the cold pump, and the process cost is effectively reduced; meanwhile, the flow control mechanism is arranged on each air inlet pipeline, so that the gas flow of each air inlet pipeline can be reasonably regulated, accurate air supply at different positions in the process chamber is realized, and the uniformity of the gas flow in the process chamber is further improved.

Furthermore, the layout of the longitudinal area of the process gas in the process chamber can be adjusted by arranging a lifting mechanism to adjust the height of the gas inlet pipeline. By uniformly controlling the 3D space of the process gas in the whole process chamber space, the influence of cold pump bias on the air flow movement in the process chamber can be eliminated, the uniformity of the deposited film and the resistivity stability of nitride are improved, the process capability of equipment is enhanced, and the product quality is effectively improved.

Drawings

In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings needed to be used in the embodiments will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present invention and therefore should not be considered as limiting the scope, and for those skilled in the art, other related drawings can be obtained according to the drawings without inventive efforts.

FIG. 1 is a schematic diagram of a prior art process chamber configuration;

FIG. 2 is a schematic diagram of a process chamber according to an embodiment of the invention;

FIG. 3 is a cross-sectional top view of a process chamber according to an embodiment of the present invention;

FIG. 4 (a) is a schematic diagram of the surface resistivity distribution of TaN film before gas flow optimization according to an embodiment of the present invention; FIG. 4 (b) is a schematic diagram of the surface resistivity distribution of the TaN film after gas flow optimization according to the embodiment of the present invention.

Description of the main element symbols:

101-a target material; 102-a chamber body; 103-inner lining; 104-a snap ring; 1041-a first extension; 1042 — a second extension; 105-a wafer; 106-a support table; 107-a base; 1071-base; 1072-support columns; 108-cold pump gate valve; 109-cold pump; 110. 111-process gas circuit; 112-a mixed gas circuit; 1121-main gas mixing pipe; 1122-intake manifold; 1123-gas outlet branch pipe; 113-MFC; 114-a hose section; 115-hard pipe section; 116-a lifting mechanism; 117 — an air intake line; 203-projection outer edge of the support column; 204-seat projection outer edge; 205-cold pump port.

Detailed Description

Reference will now be made in detail to embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to the same or similar elements or elements having the same or similar function throughout. The embodiments described below with reference to the accompanying drawings are illustrative only for the purpose of explaining the present invention, and are not to be construed as limiting the present invention.

In the description of the present invention, it is to be understood that the terms "central," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," "axial," "radial," "circumferential," and the like are used in the orientations and positional relationships indicated in the drawings for convenience in describing the invention and to simplify the description, and are not intended to indicate or imply that the referenced device or element must have a particular orientation, be constructed and operated in a particular orientation, and are not to be considered limiting of the invention.

Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present invention, "plurality" or "a number" means two or more unless specifically limited otherwise.

In the present invention, unless otherwise expressly stated or limited, the terms "mounted," "connected," "secured," and the like are to be construed broadly and can, for example, be fixedly connected, detachably connected, or integrally formed; can be mechanically or electrically connected; either directly or indirectly through intervening media, either internally or in any other relationship. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.

In the present invention, unless otherwise expressly stated or limited, the first feature "on" or "under" the second feature may be directly contacting the first and second features or indirectly contacting the first and second features through an intermediate. Also, a first feature "on," "over," and "above" a second feature may be directly or diagonally above the second feature, or may simply indicate that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature may be directly under or obliquely under the first feature, or may simply mean that the first feature is at a lesser elevation than the second feature.

One embodiment of the present invention provides a process chamber in semiconductor processing equipment, as shown in fig. 2, including a chamber body 102, a gas inlet device, and a pedestal 107 disposed inside the chamber body 102, where the gas inlet device includes a plurality of gas inlet pipes 117, the plurality of gas inlet pipes 117 are disposed around the pedestal 107 and are all located below the pedestal 107, and each gas inlet pipe 117 is provided with a flow control mechanism 113 for controlling the flow of gas entering the gas inlet pipe 117; among them, the flow control mechanism 113 is preferably a Mass Flow Controller (MFC).

As a specific embodiment, the process chamber may be a magnetron sputtering chamber, which further includes a target 101, a supporting pedestal 106 disposed above the base 107 for supporting the wafer 105, a cold pump 109, and a cold pump gate valve 108 disposed on the cold pump 109, wherein the base 107 includes a base 1071 and a supporting column 1072 supporting the base, the base 1071 and the supporting column 1072 are disposed coaxially, that is, the base projected outer edge 204 of the base 1071 at the bottom of the chamber body 102 and the supporting column projected outer edge 203 of the supporting column 1072 at the bottom of the chamber body 102 are concentric circles (as shown in fig. 3); a cold pump 109 is disposed at the bottom side of the chamber body 102 for pumping to maintain a desired process pressure within the process chamber.

Further, the process chamber further includes a liner 103 disposed on an inner wall of the chamber body 102 and a clamp ring 104 disposed above an edge of the base 1071, wherein the liner 103 includes a flanged structure having an upward opening and being close to a sidewall of the base 1071, the clamp ring 104 includes a first extending portion 1041 extending along a radial direction and a second extending portion 1042 extending along an axial direction, the clamp ring 104 and the sidewall of the base 1071 form a lower bent structure, and the flanged structure and the lower bent structure are relatively staggered to form a bent gas flow channel. The process gas enters the interior of the process chamber through the gas inlet pipeline and enters the process area above the base through the bent gas flow channel. Many air inlet pipelines have shortened the distance that process gas got into the air current passageway of buckling around the setting of base, have improved the uneven problem of the inside air current of process chamber to a certain extent, and can avoid a large amount of process gas directly to be pumped away by the cold pump, effectively reduced technology cost.

Meanwhile, the flow control mechanism is arranged on each air inlet pipeline, so that the gas flow of each air inlet pipeline can be reasonably regulated, accurate air supply at different positions in the process chamber is realized, and the uniformity of the gas flow in the process chamber is further improved.

As a preferred embodiment, a plurality of air inlet lines 117 are vertically provided through the bottom wall of the chamber body 102 around the base 107. The plurality of air inlet pipelines 117 vertically penetrate through the bottom wall of the chamber body 102, so that the air inlet pipeline is easy to realize, and the control difficulty can be reduced when the air flow in the chamber is controlled. However, the present invention is not limited to the arrangement of the air intake duct 117, and for example, the air intake duct 117 may be fixed on the basis of a side wall, or may be angled with respect to the vertical direction.

As a preferred embodiment, the air intake device further includes a plurality of lifting mechanisms 116, the plurality of lifting mechanisms 116 and the plurality of air intake pipes 117 are disposed in a one-to-one correspondence, and the lifting mechanisms 116 are disposed on the bottom wall of the chamber body 102 and are connected to the bottom wall in a sealing manner for driving the air intake pipes to move up and down; the plurality of air inlet pipes 117 are disposed through the lifting mechanism 116 and are hermetically connected to the lifting mechanism 116.

As shown in fig. 2, each inlet line 117 is connected to a lift mechanism 116 and a Mass Flow Controller (MFC) 113. So set up, can adjust every air inlet pipe's height and gas flow according to actual need to realize that process gas is at the three-dimensional even control of whole cavity 3D. Specifically, by controlling the flow of the air inlet pipelines MFC at different positions, accurate air supply at different chamber positions is realized, for example, the process gas flow of the air inlet pipeline close to the cold pump 109 is appropriately increased, and the process gas flow of the air inlet pipeline far from the cold pump 109 is appropriately decreased, so that gradient air supply at different areas is realized, and further, air supply balance at different areas of the whole chamber is realized; meanwhile, the process gas is reasonably distributed in the longitudinal area by controlling the lifting of the position of the gas inlet pipeline, so that the 3D (three-dimensional) uniform control of the space of the whole chamber is realized, and the technical effects of improving the uniformity of the deposited film, enhancing the process capability of equipment and improving the product quality are achieved.

Further, the plurality of air inlet pipes 117 are uniformly arranged in a circular ring shape. As shown in fig. 3, the air inlet pipes 117 are vertically and uniformly arranged along the holder body 1071 at the holder body projected outer edge 204 of the bottom of the chamber body 102, and the distance between any two adjacent air inlet pipes 117 is equal. So set up, the intake pipe way port is corresponding with the airflow channel that buckles to make process gas more easily get into base 107 top process area through the airflow channel that buckles, in addition, the even setting of intake pipe along the pedestal circumference combines the regulation of intake pipe vertical height and the reasonable control of intake pipe flow, makes process gas realize the equilibrium in distribution and the flow of process chamber, can effectively eliminate the influence of cold pump biasing to the indoor air current motion of process chamber, improves the film homogeneity.

As an alternative embodiment, the air intake line 117 includes a flexible pipe segment 114 and a rigid pipe segment 115, wherein the rigid pipe segment 115 is inserted into the lifting mechanism 116 and is connected to the lifting mechanism 116 in a sealing manner, the rigid pipe segment 115 is partially located inside the chamber body 102 and partially located outside the chamber body 102, the flexible pipe segment 114 is located outside the chamber body 102, one end of the flexible pipe segment is communicated with the end of the rigid pipe segment 115 located outside the chamber body 102, and the other end of the flexible pipe segment is communicated with the MFC 113. By adopting the structure, the gas circuit connection can be more effectively and stably realized, and the lifting movement of the gas inlet pipeline 117 is realized under the condition of ensuring the integrity of the gas circuit.

As shown in fig. 2, the air inlet apparatus further includes a mixing air path 112 and

process air paths

110 and 111, wherein the mixing air path 112 is connected to the air inlet line 117 and the

process air paths

110 and 111, and is configured to pre-mix the process gases transported by the

process air paths

110 and 111 and transport the process gases to the air inlet line 117. In this embodiment, the number of the process gas paths is not particularly limited, and may be set according to the type of the process gas required in the actual process; and similarly, the number of the air inlet pipelines can be reasonably set according to actual control requirements.

Further, the gas mixing path 112 includes a main gas mixing pipe 1121, a gas inlet branch pipe 1122, and a plurality of gas outlet branch pipes 1123, and the gas inlet branch pipe 1122 and the plurality of gas outlet branch pipes 1123 are both communicated with the main gas mixing pipe 1121; the air outlet branch pipes 1123 are in one-to-one correspondence with the air inlet pipelines 117, the air outlet branch pipes 1123 are communicated with the air inlet pipelines 117 through the MFCs 113, and the two

process gas circuits

110 and 111 are communicated with the air inlet branch pipes 1122. By adopting the mixed gas circuit 112, a stable setting basis can be provided for the MFC 113, so as to realize stable connection between the MFC 113 and the hose section 114 of the gas inlet pipeline 117. Meanwhile, the

process gas circuits

110 and 111 are communicated with the gas inlet branch pipe 1122, so that the process gases can be fully mixed to the greatest extent.

Another embodiment of the present invention provides a semiconductor processing apparatus including the process chamber provided in the above-described embodiments of the present invention.

The technical scheme provided by the embodiment of the invention is particularly suitable for a scene of depositing the metal nitride film by PVD magnetron sputtering, and can effectively avoid unstable resistivity caused by the influence of the size of a process kit and the change of the pumping speed of a cold pump on the stoichiometric ratio of metal and nitrogen in the metal nitride film. However, it should be noted that the application of the technical solution provided by the embodiment of the present invention is not limited to the magnetron sputtering apparatus, nor is it limited to the preparation of metal nitride, and any other semiconductor process apparatus and process scenario with similar problems can be applicable, for example, the preparation of other binary metal compounds, in which the non-metal element is provided by gas.

The technical effects achieved by the present invention will be briefly described below with a specific embodiment.

The semiconductor processing chamber provided in this embodiment is shown in fig. 2 and 3, and includes 8 gas inlet pipes 117 vertically and uniformly arranged along the holder body 1071 at the holder body projected outer edge 204 of the bottom of the chamber body 102. Taking the TaN film preparation as an example, when the film resistivity is not uniform or has an eccentric condition, as shown in fig. 4 (a), the deviation of the film resistivity near the cold pump port (left side of the figure) is particularly obvious, and then the MFC flow and/or the height of the three air inlet pipes 117 near the cold pump port 205 are appropriately adjusted to be high, and the MFC flow and/or the height of the three air inlet pipes 117 far from the cold pump port 205 are appropriately adjusted to be low. For example, the gradient arrangement of FIG. 3 with three MFCs 113 near the cold pump port at 70sccm Ar/50sccm N2, three MFCs 113 far from the cold pump port at 60sccm Ar/40sccm N2, and two MFCs 113 before the two at 65sccm Ar/45sccm N2 can ensure that the gas flow remains uniform throughout the process chamber and near the wafer.

FIG. 4 is a comparison graph of the wafer surface resistivity distribution before and after gas flow optimization, using contour lines to show the magnitude distribution of the resistivity across the wafer surface, the closer the contour lines are to concentric circles, illustrating the more uniform the resistivity distribution across the wafer surface from the inside out. Before the air flow optimization, the resistivity of the area near the cold pump opening on the wafer is extremely uneven compared with the resistivity of other areas (as shown in figure 4 (a)), and a deviation phenomenon occurs; by optimizing the gas flow distribution, the resistivity distribution of the whole wafer surface is extremely uniform, and a perfect concentric circle distribution is presented (as shown in fig. 4 (b)).

In the description herein, references to the description of the terms "one embodiment," "some embodiments," "preferred embodiments," "specific embodiments," etc., mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above are not necessarily intended to refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, various embodiments or examples and features of different embodiments or examples described in this specification can be combined and combined by one skilled in the art without contradiction.

Although embodiments of the present invention have been shown and described above, it is understood that the above embodiments are exemplary and should not be construed as limiting the present invention, and that variations, modifications, substitutions and alterations can be made to the above embodiments by those of ordinary skill in the art within the scope of the present invention.

Claims

1. A process chamber in semiconductor process equipment comprises a chamber body, an air inlet device and a base arranged in the chamber body, and is characterized in that a supporting table for bearing a wafer is arranged above the base; the air inlet device comprises a plurality of air inlet pipelines, the air inlet pipelines surround the base and are all located below the base, and each air inlet pipeline is provided with a flow control mechanism and used for controlling the flow of gas entering the air inlet pipelines.

2. The process chamber of claim 1, wherein the gas inlet conduit is vertically disposed through a bottom wall of the chamber body.

3. The process chamber of claim 2, wherein the gas inlet device further comprises a plurality of lifting mechanisms, the plurality of lifting mechanisms are arranged in one-to-one correspondence with the plurality of gas inlet pipes, and the lifting mechanisms are used for driving the gas inlet pipes to move up and down.

4. The process chamber of claim 3, wherein the lift mechanism is disposed through the bottom wall and is in sealing communication with the bottom wall; the air inlet pipeline penetrates through the lifting mechanism and is in sealing connection with the lifting mechanism.

5. The process chamber of claim 4, wherein the gas inlet line comprises a hard pipe section and a soft pipe section, the hard pipe section is arranged in the lifting mechanism in a penetrating mode and is connected with the lifting mechanism in a sealing mode, the hard pipe section is located partially inside the chamber body and partially outside the chamber body, the soft pipe section is located outside the chamber body, one end of the soft pipe section is communicated with the end, located outside the chamber body, of the hard pipe section, and the other end of the soft pipe section is communicated with the flow control mechanism.

6. The process chamber of any of claims 1-5, wherein the plurality of gas inlet lines are uniformly arranged in a circular ring shape.

7. The process chamber of any of claims 1-5, wherein the flow control mechanism is a mass flow controller.

8. The process chamber of any of claims 1-5, wherein the gas inlet device further comprises a mixing gas circuit, at least two process gas circuits, and the mixing gas circuit is communicated with the gas inlet circuit and the process gas circuits.

9. The process chamber of claim 8, wherein the mixing gas circuit comprises a main gas mixing pipe, a gas inlet branch pipe, and a plurality of gas outlet branch pipes, and the gas inlet branch pipe and the plurality of gas outlet branch pipes are both communicated with the main gas mixing pipe; the air outlet branch pipes are in one-to-one correspondence with the air inlet pipelines, the air outlet branch pipes are communicated with the air inlet pipelines through the flow control mechanisms, and at least two process air paths are communicated with the air inlet branch pipes.

10. A semiconductor processing apparatus comprising the process chamber of any of claims 1-9.