CN205069606U - Silicon chip bears base and atomic layer deposition equipment - Google Patents
Silicon chip bears base and atomic layer deposition equipment Download PDFInfo
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- CN205069606U CN205069606U CN201520837788.1U CN201520837788U CN205069606U CN 205069606 U CN205069606 U CN 205069606U CN 201520837788 U CN201520837788 U CN 201520837788U CN 205069606 U CN205069606 U CN 205069606U
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Abstract
The utility model belongs to the technical field of semiconductor IC -manufacture equipment, a silicon chip bears base and atomic layer deposition equipment is disclosed, including base body, gaseous supply line and gaseous source of supply, wherein, gaseous supply line is a plurality of, link up the base body from the bottom and blows gas between to the silicon chip back and base body upper surface to prevent reaction gas to flow to the silicon chip back, have the control valve that is used for control of gases supply line to open and close on the gaseous supply line. The utility model discloses an add gaseous supply line on atomic layer deposition equipment's base body to to blowing gas between the silicon chip back and the base body, flow to the silicon chip back in order to prevent reaction gas, and then prevent the formation of silicon chip back film, the utility model discloses left out current out -of -the -way cleaning process, avoided having improved the productivity simultaneously because the next latent technology risk of back of the body cleaning process conduction band has reduced manufacturing cost.
Description
Technical field
The utility model belongs to semiconductor integrated circuit manufacturing equipment technical field, relates to a kind of silicon chip bearing base and atomic layer deposition apparatus.
Background technology
In semiconductor integrated circuit industry, along with continuing to increase and the lasting reduction of the critical dimension relevant to these devices of semiconductor device integrated level, much new materials and process is applied in device fabrication.Such as, traditional CVD deposition technique has been difficult to effectively accurately control film characteristics and meet day by day harsh process specifications, technique for atomic layer deposition (AtomicLayerDeposition; ALD) be widely used, ald be a kind of can by material with the monatomic form membrane method being plated in substrate surface in layer, simply accurately can be controlled the thickness of film by control number reaction time, form the film reaching atomic layer level thickness precision; Film of its growth does not have pin hole, evenly and fabulous to the conformality of film pattern.
But, when adopting technique for atomic layer deposition deposition film, due to the defect of atomic layer deposition apparatus itself, reaction gas knows from experience the back side flowing to silicon chip from the upper surface of silicon chip, thus cause also can deposit thin film (such as silicon dioxide etc.) at silicon chip back side, and the uniformity of film of silicon chip back side is poor, the uneven film that silicon chip back side exists can cause follow-up photoetching process to aim at, thus affects the carrying out of photoetching process.
Current, in order to solve this problem, usual way is after silicon chip back side forms uneven film, increases and carries on the back cleaning together, and the unnecessary film of silicon chip back side is removed.But because the thickness of the film of silicon chip back side growth is uncontrollable, thus cause the process time of carrying on the back cleaning also uncontrollable, back of the body cleaning overlong time, also can wash the deielectric-coating of silicon chip surface; Back of the body scavenging period is too short, film unnecessary for silicon chip back side can not be removed again clean, cannot reach desirable cleaning performance, and the back of the body cleaning of follow-up increase can cause increase and the prolongation in flow cycle of production cost simultaneously.
Therefore, those skilled in the art need badly provides a kind of the silicon chip bearing base and the atomic layer deposition apparatus that prevent silicon chip back side growing film.
Utility model content
Technical problem to be solved in the utility model is to provide a kind of the silicon chip bearing base and the atomic layer deposition apparatus that prevent silicon chip back side growing film.
In order to solve the problems of the technologies described above, the utility model provides a kind of silicon chip bearing base, for silicon chip is fixed in the deposition chamber of atomic layer deposition apparatus, comprise: base body, be located at below silicon chip, described base body has multiple strutting piece for carrying silicon chip, the lower surface of described silicon chip and the upper surface of base body have preset pitch; Gas supply pipe, described gas supply pipe is multiple, from bottom, through described base body is to blow gas between silicon chip back side and base body upper surface, to stop reactant gas flow to silicon chip back side, described gas supply pipe has the control valve opened and closed for controlling described gas supply pipe; And gas supply source, be connected with described gas supply pipe, for carrying gas to described gas supply pipe.
Preferably, described gas supply pipe has gas flow adjuster, the gas flow size of carrying for regulating described gas supply pipe.
Preferably, described gas supply pipe is at least four, and is uniformly distributed in the circumferencial direction of described base body.
Preferably, the supply opening of described gas supply pipe and the upper surface of described base body are at same plane.
Preferably, the edge 3 ~ 15mm of base body described in described feed tube track pitch.
Preferably, the diameter of described gas supply pipe is 3 ~ 5mm.
Preferably, the cross section of described gas supply pipe is circle, ellipse, rectangle or irregular shape.
Preferably, the material of described gas supply pipe is stainless steel or titanium.
Preferably, described gas supply pipe and base body are formed in one structure.
The utility model also provides a kind of atomic layer deposition apparatus, comprises deposition chamber, is provided with silicon chip bearing base described above in described deposition chamber, carries out depositing operation for being fixed in described deposition chamber by wafer.
Compared with existing scheme, the utility model provides a kind of silicon chip bearing base and atomic layer deposition apparatus, by setting up gas supply pipe on the base body of atomic layer deposition apparatus, thus to blow gas between silicon chip back side and base body, to stop reactant gas flow to silicon chip back side, and then prevent the generation of silicon chip back side film; The utility model eliminates existing back of the body cleaning, avoids the potential process risk because back of the body cleaning conduction band comes, reduces production cost, improve production capacity simultaneously.
Accompanying drawing explanation
In order to be illustrated more clearly in the technical scheme in the utility model embodiment, be briefly described to the accompanying drawing used required in embodiment below, apparently, accompanying drawing in the following describes is only embodiments more of the present utility model, for those of ordinary skill in the art, under the prerequisite not paying creative work, other accompanying drawing can also be obtained according to these accompanying drawings.
Fig. 1 is the planar structure schematic diagram of silicon chip bearing base in the utility model;
Fig. 2 is the cross-sectional view of silicon chip bearing base in the utility model.
Embodiment
For making the purpose of this utility model, technical scheme and advantage clearly, below in conjunction with accompanying drawing, execution mode of the present utility model is described in further detail.Those skilled in the art the content disclosed by this specification can understand other advantages of the present utility model and effect easily.The utility model can also be implemented or be applied by embodiments different in addition, and the every details in this specification also can based on different viewpoints and application, carries out various modification or change not deviating under spirit of the present utility model.
Above-mentioned and other technical characteristic and beneficial effect, will in conjunction with the embodiments and accompanying drawing silicon chip bearing base of the present utility model and atomic layer deposition apparatus are described in detail.Fig. 1 is the planar structure schematic diagram of silicon chip bearing base in the utility model; Fig. 2 is the cross-sectional view of silicon chip bearing base in the utility model.
As shown in Figure 1, 2, the utility model provides a kind of silicon chip bearing base, for silicon chip 60 is fixed in the deposition chamber of atomic layer deposition apparatus, comprise base body 10, gas supply pipe 20 and gas supply source 30, wherein, base body 10 is located at below silicon chip 60, base body 10 has multiple strutting piece 11 for carrying silicon chip, and the lower surface of silicon chip 60 and the upper surface of base body 10 have preset pitch; Gas supply pipe 20 is multiple, from the through base body 10 in bottom to blow gas between silicon chip 60 back side and base body 10 upper surface, to stop reactant gas flow to silicon chip 60 back side, gas supply pipe 20 has the control valve 40 opened and closed for controlling gas supply pipe 20; Gas supply source 30 is connected with gas supply pipe 20, and for carrying gas to gas supply pipe 20, wherein, in the present embodiment, gas supply is preferably argon gas.
Concrete, in the present embodiment, gas supply pipe 20 is at least four, and be uniformly distributed in the circumferencial direction of base body 10, three as shown in Figure 1, six o'clock, nine o'clock and twelve-hour direction place, gas supply pipe 20 passes from the bottom of base body 10, and through base body 10, the upper surface of its supply opening and base body 10 is at same plane.
Meanwhile, gas supply pipe 20 apart from the edge 3 ~ 15mm of base body 10, as gas supply pipe 20 is too near to the edge of base body 10, the gas major part of leading to enter in the cavity of ALD equipment, can impact atom layer deposition process; If gas supply pipe 20 is too away from the edge of base body 10, just do not have the effect stoping reacting gas to enter into silicon chip back side, in this example, gas supply pipe 20 is 5 millimeters apart from the edge of base body 10.
In addition, the diameter of gas supply pipe 20 is preferably 3 ~ 5mm, and its cross section is circle, ellipse, rectangle or irregular shape; The material of described gas supply pipe 20 is stainless steel or titanium, and gas supply pipe 20 and base body 10 are formed in one structure, is convenient to make and rugged construction is durable.
In order to better control gas supply pipe 20 export gas flow size, gas supply pipe 20 has gas flow adjuster 50, by control gas flow adjuster 50, thus control export gas stop reacting gas flow into number.
The utility model also provides a kind of atomic layer deposition apparatus, comprises deposition chamber, is provided with above-mentioned silicon chip bearing base in deposition chamber, carries out depositing operation for being fixed in deposition chamber by wafer.
In this routine embodiment, base body 10 diameter of atomic layer deposition apparatus equals the diameter of silicon chip 60, therefore silicon chip 60 size that the actual size of the diameter of base body 10 adopts according to reality is determined.For the silicon chip 60 of 4 ~ 12 inches common in current semiconductor technology, the diameter of atomic layer deposition apparatus base body 10 preferably scope is 4 ~ 12 inches, for the silicon chip 60 of other sizes, the diameter of atomic layer deposition apparatus base body 10 can change accordingly.
In sum, the utility model provides a kind of silicon chip bearing base and atomic layer deposition apparatus, by setting up gas supply pipe 20 on the base body 10 of atomic layer deposition apparatus, thus to blow gas between silicon chip back side and base body, to stop reactant gas flow to silicon chip 60 back side, and then prevent the generation of silicon chip 60 back side film; The utility model eliminates existing back of the body cleaning, avoids the potential process risk because back of the body cleaning conduction band comes, reduces production cost, improve production capacity simultaneously.
Above-mentioned explanation illustrate and describes some preferred embodiments of the present utility model, but as previously mentioned, be to be understood that the utility model is not limited to the form disclosed by this paper, should not regard the eliminating to other embodiments as, and can be used for other combinations various, amendment and environment, and can in utility model contemplated scope described herein, changed by the technology of above-mentioned instruction or association area or knowledge.And the change that those skilled in the art carry out and change do not depart from spirit and scope of the present utility model, then all should in the protection range of the utility model claims.
Claims (10)
1. a silicon chip bearing base, for being fixed in the deposition chamber of atomic layer deposition apparatus by silicon chip, is characterized in that, comprising:
Base body, is located at below silicon chip, described base body has multiple strutting piece for carrying silicon chip, and the lower surface of described silicon chip and the upper surface of base body have preset pitch;
Gas supply pipe, described gas supply pipe is multiple, from bottom, through described base body is to blow gas between silicon chip back side and base body upper surface, to stop reactant gas flow to silicon chip back side, described gas supply pipe has the control valve opened and closed for controlling described gas supply pipe; And,
Gas supply source, is connected with described gas supply pipe, for carrying gas to described gas supply pipe.
2. silicon chip bearing base according to claim 1, is characterized in that, described gas supply pipe has gas flow adjuster, the gas flow size of carrying for regulating described gas supply pipe.
3. silicon chip bearing base according to claim 1, is characterized in that, described gas supply pipe is at least four, and is uniformly distributed in the circumferencial direction of described base body.
4. silicon chip bearing base according to claim 1, is characterized in that, the supply opening of described gas supply pipe and the upper surface of described base body are at same plane.
5. silicon chip bearing base according to claim 1, is characterized in that, the edge 3 ~ 15mm of base body described in described feed tube track pitch.
6. silicon chip bearing base according to claim 1, is characterized in that, the diameter of described gas supply pipe is 3 ~ 5mm.
7. silicon chip bearing base according to claim 1, is characterized in that, the cross section of described gas supply pipe is circle, ellipse, rectangle or irregular shape.
8. silicon chip bearing base according to claim 1, is characterized in that, the material of described gas supply pipe is stainless steel or titanium.
9. according to the arbitrary described silicon chip bearing base of claim 1 ~ 8, it is characterized in that, described gas supply pipe and base body are formed in one structure.
10. an atomic layer deposition apparatus, is characterized in that, comprises deposition chamber, is provided with silicon chip bearing base as claimed in any one of claims 1-9 wherein in described deposition chamber, carries out depositing operation for being fixed in described deposition chamber by wafer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520837788.1U CN205069606U (en) | 2015-10-27 | 2015-10-27 | Silicon chip bears base and atomic layer deposition equipment |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520837788.1U CN205069606U (en) | 2015-10-27 | 2015-10-27 | Silicon chip bears base and atomic layer deposition equipment |
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| CN205069606U true CN205069606U (en) | 2016-03-02 |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107870197A (en) * | 2016-09-22 | 2018-04-03 | 格罗方德半导体公司 | Air-flow handles control system and the method using crystal microbalance |
| CN110592553A (en) * | 2019-10-24 | 2019-12-20 | 北京北方华创微电子装备有限公司 | Process chamber and semiconductor equipment |
| CN112992743A (en) * | 2021-05-17 | 2021-06-18 | 北京北方华创微电子装备有限公司 | Semiconductor process chamber and semiconductor process equipment |
| CN113707536A (en) * | 2021-08-27 | 2021-11-26 | 上海鼎泰匠芯科技有限公司 | Back sealing process of wafer |
| CN115513103A (en) * | 2022-11-23 | 2022-12-23 | 西安奕斯伟材料科技有限公司 | Device for back sealing silicon wafer |
-
2015
- 2015-10-27 CN CN201520837788.1U patent/CN205069606U/en active Active
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107870197A (en) * | 2016-09-22 | 2018-04-03 | 格罗方德半导体公司 | Air-flow handles control system and the method using crystal microbalance |
| CN110592553A (en) * | 2019-10-24 | 2019-12-20 | 北京北方华创微电子装备有限公司 | Process chamber and semiconductor equipment |
| CN110592553B (en) * | 2019-10-24 | 2021-11-16 | 北京北方华创微电子装备有限公司 | Process chamber and semiconductor equipment |
| CN112992743A (en) * | 2021-05-17 | 2021-06-18 | 北京北方华创微电子装备有限公司 | Semiconductor process chamber and semiconductor process equipment |
| CN112992743B (en) * | 2021-05-17 | 2021-09-17 | 北京北方华创微电子装备有限公司 | Semiconductor process chamber and semiconductor process equipment |
| CN113707536A (en) * | 2021-08-27 | 2021-11-26 | 上海鼎泰匠芯科技有限公司 | Back sealing process of wafer |
| CN115513103A (en) * | 2022-11-23 | 2022-12-23 | 西安奕斯伟材料科技有限公司 | Device for back sealing silicon wafer |
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