CN115513103A - Device for back sealing silicon wafer - Google Patents
Device for back sealing silicon wafer Download PDFInfo
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- CN115513103A CN115513103A CN202211472925.7A CN202211472925A CN115513103A CN 115513103 A CN115513103 A CN 115513103A CN 202211472925 A CN202211472925 A CN 202211472925A CN 115513103 A CN115513103 A CN 115513103A
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- Prior art keywords
- silicon wafer
- carrier
- sealing
- reaction gas
- wafer
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 177
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 177
- 239000010703 silicon Substances 0.000 title claims abstract description 177
- 238000007789 sealing Methods 0.000 title claims abstract description 54
- 239000012495 reaction gas Substances 0.000 claims abstract description 29
- 238000010438 heat treatment Methods 0.000 claims abstract description 24
- 238000000034 method Methods 0.000 claims abstract description 11
- 238000002347 injection Methods 0.000 claims abstract description 9
- 239000007924 injection Substances 0.000 claims abstract description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 7
- 239000007789 gas Substances 0.000 claims description 5
- 238000010926 purge Methods 0.000 claims description 5
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 235000012431 wafers Nutrition 0.000 claims 20
- 238000006243 chemical reaction Methods 0.000 description 10
- 239000010408 film Substances 0.000 description 7
- 238000000151 deposition Methods 0.000 description 6
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 4
- 239000002019 doping agent Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000007664 blowing Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000005484 gravity Effects 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000007688 edging Methods 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229920002379 silicone rubber Polymers 0.000 description 1
- 239000004945 silicone rubber Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
Abstract
The present disclosure relates to an apparatus for back sealing a silicon wafer, comprising: the bearing device is used for bearing the silicon wafer; a travel device for traveling the carrier device during the back sealing process; the heating device is arranged above the bearing device and used for heating the silicon wafer from the upper part of the silicon wafer; and an injection device disposed below the carrier device for injecting the reaction gas to the silicon wafer from below the silicon wafer, wherein the carrier device is configured as a hollow structure which is open at a lower end thereof and includes a holding portion configured for enabling the silicon wafer to be carried on the holding portion through an edge thereof with a back surface facing downward, thereby allowing the injection device to inject the reaction gas to the back surface of the silicon wafer so as to deposit and form a back sealing film thereon. By the device, the central area of the silicon wafer can be prevented from collapsing and deforming downwards.
Description
Technical Field
The present disclosure relates to the field of semiconductor manufacturing technologies, and in particular, to an apparatus for back sealing a silicon wafer.
Background
The heavily doped silicon wafer needs to be prevented from self-doping in the epitaxial growth stage, that is, under the high-temperature environment in the epitaxial growth process, the dopant of the heavily doped silicon wafer can diffuse outwards from the front and the back of the silicon wafer, so that the dopant is mixed with the reaction gas for epitaxial growth and is deposited to form the epitaxial layer of the silicon wafer, which can cause resistivity drift and seriously affect the quality of the silicon wafer. The silicon wafer back sealing technology is a commonly used means for preventing self-doping, and dopant atoms are sealed in the silicon wafer by depositing a back sealing film such as a silicon dioxide film on the back surface of the silicon wafer, so that the out-diffusion of the dopant is effectively inhibited.
Currently, the back sealing film is usually deposited by using an Atmospheric Pressure Chemical Vapor Deposition (APCVD) method. The APCVD equipment utilizing the deposition mode comprises a reaction chamber, wherein a bearing disc for bearing a silicon wafer to be deposited, a conveying device for conveying the bearing disc, an injection device arranged above the conveying device and used for injecting reaction gas to the silicon wafer, and a heating device arranged below the conveying device and used for heating the silicon wafer so as to enable the silicon wafer to be at the temperature required by the deposition reaction are arranged in the reaction chamber. When the silicon wafer is subjected to back sealing, the silicon wafer needs to be turned over and then placed on the bearing disc, so that the back surface of the silicon wafer faces upwards, the front surface of the silicon wafer is arranged in a gap with the surface of the bearing disc, and a back sealing film grows on the back surface of the silicon wafer through chemical vapor deposition.
However, in the preheating stage and the reaction stage of heating the silicon wafer by the heating device, because there is a temperature difference between the upper and lower surfaces of the silicon wafer placed on the bearing tray, that is, the temperature of the front surface of the silicon wafer is slightly higher than the temperature of the back surface, and because the arrangement mode of the silicon wafer on the bearing tray, that is, the edge of the silicon wafer is placed on the bearing tray without contacting the bearing tray in the central region, the silicon wafer can deform by collapsing in the central region under the action of internal force and self gravity, and the central region of the silicon wafer can contact the bearing tray, thereby damaging the front surface of the silicon wafer, that is, one surface of the epitaxial layer to be grown.
Disclosure of Invention
This section provides a general summary of the disclosure, and is not a comprehensive disclosure of its full scope or all of its features.
The purpose of the present disclosure is to provide an apparatus for back sealing a silicon wafer, which can prevent the central region of the silicon wafer from collapsing and deforming in the back sealing.
Another object of the present disclosure is to provide an apparatus for back-sealing a silicon wafer that can eliminate the need to edge-remove the silicon wafer after back-sealing.
It is yet another object of the present disclosure to provide an apparatus for back-sealing a silicon wafer that can back-seal the silicon wafer with the front side of the silicon wafer facing up without flipping the silicon wafer over.
To achieve the above object, according to the present disclosure, there is provided an apparatus for back-sealing a silicon wafer, comprising:
the bearing device is used for bearing the silicon wafer;
a traveling device for traveling the carrying device in the back sealing process;
the heating device is arranged above the bearing device and used for heating the silicon wafer from the upper part of the silicon wafer; and
an injection device disposed below the carrier device for injecting a reaction gas from below the silicon wafer to the silicon wafer,
wherein the carrier is configured as a hollow structure which is open at a lower end thereof and includes a holding portion configured for enabling the silicon wafer to be carried thereon through an edge thereof with a back surface facing downward, thereby allowing the ejection means to eject the reaction gas toward the back surface of the silicon wafer to deposit and form a back sealing film thereon.
In the above apparatus for back-sealing a silicon wafer, the holding part may be provided at a lower end of the hollow structure.
In the above apparatus for back-sealing a silicon wafer, the holding portion may have a circular ring shape for holding the entire edge of the silicon wafer.
In the above apparatus for back-sealing a silicon wafer, the carrier may include an annular seal member provided on the holding portion for forming a seal between the holding portion and an edge of the silicon wafer when the silicon wafer is held on the holding portion.
In the above apparatus for back-sealing a silicon wafer, an exhaust means for exhausting an unreacted residual part of the reaction gas may be further included.
In the above-described apparatus for back-sealing a silicon wafer, the hollow structure may be open at an upper end thereof.
In the above apparatus for back sealing a silicon wafer, a purging device may be further included, which is disposed above the carrying device and used for blowing gas to the front surface of the silicon wafer during the back sealing process to prevent the reaction gas from contacting the front surface of the silicon wafer.
In the above apparatus for back sealing a silicon wafer, the gas may be nitrogen.
In the above apparatus for back-sealing the silicon wafer, the traveling device may include a guide rail slidably connected with the carrier device and capable of driving the carrier device to slide on the guide rail, wherein the guide rail is arranged to allow the back surface of the silicon wafer to be completely exposed to the ejection device.
In the above apparatus for back-sealing a silicon wafer, the guide rails may be a pair of guide rails connected at both sides of the carrier in a direction orthogonal to a traveling direction thereof.
According to the present disclosure, by constructing the carrier device that enables the silicon wafer to be carried with the back surface facing downward and the back surface exposed to the external environment and carrying out the back sealing of the silicon wafer by arranging the heating device above the carrier device and the ejection device below the carrier device, the temperature of the front surface of the silicon wafer on the upper side is slightly higher than the temperature of the back surface on the lower side, thereby preventing the central region of the silicon wafer from collapsing downward and deforming. Further, by configuring the carrier to be hollow and open at the lower end thereof, neither the front surface of the silicon wafer on the upper side nor the back surface on the lower side is in contact with the other surface, thereby preventing the silicon wafer from being damaged by contact with the other surface. In addition, because the silicon wafer is supported in the supporting device in a mode that the back face faces downwards, the silicon wafer does not need to be turned over, the contact of the silicon wafer is reduced, and the risk of damage to the silicon wafer caused by the contact is reduced.
The above features and advantages and other features and advantages of the present disclosure will become more apparent from the following detailed description of exemplary embodiments thereof, which is to be read in connection with the accompanying drawings.
Drawings
FIG. 1 is a schematic diagram illustrating a carrying state of a silicon wafer on a carrier tray during a back sealing process in the prior art;
FIG. 2 schematically illustrates an apparatus for back sealing a silicon wafer, wherein the carrier is shown in cross-section for ease of illustration, in accordance with an embodiment of the disclosure;
fig. 3 schematically illustrates a carrier according to an embodiment of the present disclosure in a perspective view, wherein the structure of the carrier is shown with simple lines for clarity; and
figure 4 schematically illustrates the carrier shown in figure 3 connected to a rail.
Detailed Description
The disclosure is described in detail below with the aid of exemplary embodiments with reference to the accompanying drawings. It is to be noted that the following detailed description of the present disclosure is intended for purposes of illustration only and is not intended to limit the present disclosure in any way.
In the present APCVD apparatus, referring to fig. 1, in the back sealing, the silicon wafer 100 is placed on the carrier tray 200 with its edge facing back-up, and the central region of the silicon wafer 100 is disposed with a gap from the surface 201 of the carrier tray 200. When a heating device (not shown) heats the silicon wafer 100 from below the silicon wafer 100, because the lower surface, i.e., the front surface, of the silicon wafer 100 supported on the supporting tray 200 is closer to the heating device than the upper surface, i.e., the back surface, the temperature of the lower surface is slightly higher than that of the upper surface, and because the silicon wafer 100 is placed on the supporting tray 200 in a suspended manner through the edge thereof, the silicon wafer 100 may deform such that the central region collapses downward under the action of internal force and self-gravity, which may affect the flatness of the front surface of the silicon wafer and the growth effect of epitaxy later, and when the deformation is large, i.e., the central region of the silicon wafer collapses to a large extent, the front surface of the silicon wafer may contact with the surface 201 of the supporting tray 200 at the central region, thereby causing damage to the front surface of the silicon wafer to be epitaxially grown.
To this end, according to an embodiment of the present disclosure, referring to fig. 2, there is provided an apparatus 1 for back sealing a silicon wafer, including:
a carrier 10 for carrying the silicon wafer 2;
a traveling device 20 for traveling the carrier device 10 in the back-sealing process;
a heating device 30 disposed above the carrier 10 for heating the silicon wafer 2 from above; and
an injection device 40 disposed below the carrier 10 for injecting a reaction gas to the silicon wafer 2 from below the silicon wafer 2,
wherein the carrier device 10 is configured as a hollow structure which is open at its lower end 10a and comprises a holding part 11, the holding part 11 being configured for enabling the silicon wafer 2 to be carried on the holding part 11 with its edge facing back down, thereby allowing the jetting device 40 to jet a reaction gas to the back of the silicon wafer 2 to deposit a back sealing film thereon.
As mentioned before, in the related art apparatus, the heating means is arranged below the carrier tray for heating the silicon wafer from below, and the ejecting means is arranged above the carrier tray for ejecting the reaction gas from above to the silicon wafer, and the silicon wafer needs to be turned over, for example, by the turning mechanism to be carried on the carrier tray in a back-side-up manner for the back-sealing operation. In this case, when the back sealing is performed, the temperature of the front surface of the silicon wafer on the lower side is slightly higher than the temperature of the back surface of the silicon wafer on the upper side, which causes the silicon wafer to deform due to downward collapse of the central region under the action of internal force and self gravity, and may cause the central region of the silicon wafer to contact the carrier plate to damage the front surface of the silicon wafer, i.e., one surface on which the epitaxial layer is to be grown.
In contrast, in the apparatus 1 according to the embodiment of the present disclosure, the silicon wafer 2 is carried on the carrier 10 with the back side facing downward (i.e., the front side facing upward) and the back side exposed to the space below the carrier 10, and accordingly, the heating device 30 and the ejection device 40 are turned upside down, i.e., the heating device 30 is disposed above the carrier 10 to heat the silicon wafer 2 from above the silicon wafer 2, and the ejection device 40 is disposed below the carrier 10 to eject the reaction gas from below the silicon wafer 2 toward the silicon wafer 2 (shown by the thick arrow facing upward in fig. 2). In this case, when the back sealing is performed, the temperature of the front surface of the silicon wafer 2 on the upper side may be slightly higher than that of the back surface on the lower side so that the central region of the silicon wafer 2 can be prevented from collapsing and deforming downward by the internal force of the silicon wafer 2, whereby the flatness of the silicon wafer 2 can be improved, and since the carrier 10 is hollow and is open at the lower end 10a thereof, the front surface of the silicon wafer 2 on the upper side and the back surface on the lower side do not contact with other surfaces, and therefore, even if the silicon wafer 2 is slightly deformed, damage due to contact with other surfaces is not caused. Moreover, because the silicon wafer is not required to be turned over, the contact to the silicon wafer is reduced, and the risk of damage to the silicon wafer caused by contact is reduced.
In an embodiment of the present disclosure, referring to fig. 2 to 4, the holding part 11 may be provided at the lower end 10a of the hollow structure.
In this way, the silicon wafer 2 can be held at the lower end 10a of the carrier 10 by the holding portion 11, thereby facilitating the effect of the ejection device 40 to eject the reaction gas to the back surface of the silicon wafer 2 and controlling the ejection more easily, for example; and the silicon wafer 2 can be kept in the hollow structure of the bearing device 10, which is beneficial to protecting the front surface of the silicon wafer 2 to be epitaxially grown from being damaged.
However, it is contemplated that the retaining portion 11 may be provided at other locations of the hollow structure, such as at the upper end 10 b.
In the embodiment of the present disclosure, the holding part 11 may have a circular ring shape for holding the entire edge of the silicon wafer 2.
In this case, the holding portion 11 covers the entire edge of the silicon wafer 2 while holding the silicon wafer 2, so that the edge of the silicon wafer 2 is not deposited with a thin film when vapor-depositing the back surface of the silicon wafer 2 in a back seal, thereby eliminating the edge removal step after the back seal.
It will be appreciated that the dimensions of the retaining portion 11 may be adjusted according to the width of the edging required. Furthermore, it is also conceivable that the holding portion 11 takes any other suitable form than a circular ring-shaped holding portion.
In order to prevent the reaction gas upwardly sprayed by the spray means 40 located below the carrier 10 from contacting the front surface of the silicon wafer 2 to be deposited thereon, in an embodiment of the present disclosure, as shown in fig. 2, the carrier 10 may include an annular seal member 12 provided on the holding portion 11 for forming a seal between the holding portion 11 and the edge of the silicon wafer 2 when the silicon wafer 2 is held on the holding portion 11.
When the silicon wafer 2 is held on the holding part 11 of the carrier 10 for back sealing, the edge of the back surface of the silicon wafer 2 is attached to the annular sealing member 12 provided on the holding part 11, so that a seal is formed between the holding part 11 and the edge of the silicon wafer 2, and thus the reaction gas ejected upward from the ejection device 40 located below to the back surface of the silicon wafer 2 cannot enter the upper side of the silicon wafer 2 through the gap between the holding part 11 and the edge of the silicon wafer 2 and contact the front surface of the silicon wafer 2, thereby preventing the reaction gas from depositing on the front surface of the silicon wafer 2 to form a film.
It is contemplated that the annular seal 12 may be made of rubber such as silicone rubber.
In the present embodiment, the apparatus 1 may further include an exhaust means (not shown) for exhausting unreacted remnants (shown by downward thin arrows in fig. 2) in the reaction gas.
In performing the deposition reaction, the reaction gas is substantially concentrated between the injector 40 and the lower end 10a of the carrier 10, particularly the back surface of the silicon wafer 2 carried by the carrier 10, and the unreacted residual portion may remain at this position or may even flow to other positions of the reaction chamber for performing the reaction of the apparatus, such as a Chemical Vapor Deposition (CVD) chamber, except for a portion of the reaction, thereby increasing the risk of the reaction gas contacting the front surface of the silicon wafer 2. An exhaust means may be provided, for example, below the carrier 10 to evacuate unreacted residual portions of the reaction gas from the reaction chamber, thereby reducing the risk of the reaction gas contacting the front surface of the silicon wafer 2 to deposit a thin film thereon.
In the embodiment of the present disclosure, the hollow structure may be closed at the upper end 10b thereof, and in this case, the silicon wafer 2 may be placed on the holder 11 from the open lower end 10a thereof.
On the other hand, the hollow structure may also be open at its upper end 10b, as shown in fig. 3 and 4.
In this case, the silicon wafer 2 can be placed on the holding portion 11 from the open upper end 10b of the hollow structure, and the handling is more convenient. Also, the size of the opening of the upper end 10b may be designed such that the silicon wafer 2 can be easily entered, whereby the risk of collision due to the small opening and the improper operation can be reduced. In addition, the open upper end 10b allows the front surface of the silicon wafer 2 to be directly exposed below the heating device 30, so that the heating effect for the silicon wafer 2 is better controlled by the heating device 30.
Since the upper end 10b of the support 10 is open, there is still a possibility that the reaction gas enters the support 10 from the upper end 10b and comes into contact with the front surface of the silicon wafer 2 supported thereon to deposit a thin film thereon, and for this reason, the apparatus 1 may further include a purge device (not shown). A purge device is disposed above the carrier 10 for blowing a gas, which may be, for example, nitrogen, to the front surface of the silicon wafer 2 during the back sealing process to prevent the reaction gas from contacting the front surface of the silicon wafer 2. For example, nitrogen gas may be blown into the hollow structure of the carrier 10 to fill the space inside the hollow structure above the silicon wafer 2 to avoid the reaction gas from entering the hollow structure and thus preventing it from contacting the front surface of the silicon wafer 2.
In the back sealing process, the bearing device can move in the reaction chamber through the moving device to drive the silicon wafer to move. In prior art solutions, where the heating means are arranged below the carrier means and the spraying means are arranged above the carrier means, the travelling means are typically means arranged below the carrier means, such as a conveyor belt. However, in the present disclosure, the heating device 30 is disposed above the carrier device 10, and the injection device 40 is disposed below the carrier device 10, in which case it is necessary to avoid the configuration and/or position of the traveling device from interfering with the normal injection of the injection device 40.
In an embodiment of the present disclosure, the traveling device 20 may include a guide rail 21 slidably connected with the carrier device 10 and may drive the carrier device 10 to slide on the guide rail 21, wherein the guide rail 21 is arranged to allow the rear surface of the silicon wafer 2 to be completely exposed to the ejection device 40.
With this configuration, the traveling device 20, specifically the guide rail 21, does not interfere with the normal ejection of the ejection device 40, in other words, allows the reaction gas ejected by the ejection device 40 to reach the back surface of the silicon wafer 2 without hindrance, thereby not adversely affecting the back sealing effect.
Referring to fig. 4, the guide rail 21 may be a pair of guide rails connected at both sides of the carriage 10 in a direction orthogonal to a traveling direction thereof.
By this configuration, it is possible to make more unobstructed space for the opening of the upper end 10b in the case where the upper end 10b of the carrier 10 is open, to allow the silicon wafer 2 to be loosely and smoothly put into the carrier 10 without colliding with the carrier 10 or the guide rail 21.
It is contemplated that the guide rail 21 may be a pair of guide rails disposed at the lower end or the lower surface of the carrier device 10, or the guide rail 21 may be a single rail, for example, disposed at the middle of the upper end or the upper surface of the carrier device 10 in the case that the upper end 10b is closed, or the guide rail 21 may take other forms as long as the rear surface of the silicon wafer 2 is allowed to be completely exposed to the ejection device 40.
In addition, other types of traveling devices 20 are also conceivable, as long as the rear surface of the silicon wafer 2 is allowed to be completely exposed to the ejection device 40.
The above description is only for the specific embodiments of the present disclosure, but the scope of the present disclosure is not limited thereto, and any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present disclosure should be covered within the scope of the present disclosure. Therefore, the protection scope of the present disclosure shall be subject to the protection scope of the claims.
Claims (10)
1. An apparatus for back sealing a silicon wafer, comprising:
the bearing device is used for bearing the silicon wafer;
a travel device for traveling the carrier during a back-sealing process;
a heating device disposed above the carrier for heating the silicon wafer from above the silicon wafer; and
an injection device disposed below the carrier device for injecting a reaction gas to the silicon wafer from below the silicon wafer,
wherein the carrying device is configured as a hollow structure which is open at its lower end and includes a holding portion configured for enabling the silicon wafer to be carried thereon through its edge with its back side down, thereby allowing the ejecting device to eject the reaction gas toward the back side of the silicon wafer to deposit a back sealing film thereon.
2. The apparatus for back-sealing a silicon wafer as claimed in claim 1, wherein the holding part is provided at a lower end of the hollow structure.
3. The apparatus for back-sealing a silicon wafer as claimed in claim 1 or 2, wherein the holding part has a circular ring shape for holding the entire edge of the silicon wafer.
4. The apparatus of claim 3, wherein the carrier comprises an annular seal disposed on the holder for forming a seal between the holder and the edge of the wafer when the wafer is held on the holder.
5. The apparatus for back-sealing a silicon wafer according to claim 1 or 2, further comprising an exhaust means for exhausting unreacted residual portions of the reaction gas.
6. The apparatus according to claim 1 or 2, wherein the hollow structure is open at an upper end thereof.
7. The apparatus for back-sealing a silicon wafer as claimed in claim 6, further comprising a purging device disposed above the carrier for purging a gas to the front surface of the silicon wafer during the back-sealing process to prevent the reaction gas from contacting the front surface of the silicon wafer.
8. The apparatus of claim 7, wherein the gas is nitrogen.
9. The apparatus for back-sealing silicon wafers as claimed in claim 1 or 2, wherein the travelling means comprises a guide rail slidably connected with the carrying means and capable of driving the carrying means to slide on the guide rail, wherein the guide rail is arranged to allow the back side of the silicon wafer to be completely exposed to the jetting means.
10. The apparatus for back-sealing a silicon wafer as claimed in claim 9, wherein the guide rails are a pair of guide rails connected at both sides of the carrier in a direction orthogonal to a traveling direction thereof.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211472925.7A CN115513103A (en) | 2022-11-23 | 2022-11-23 | Device for back sealing silicon wafer |
| TW112100964A TW202331896A (en) | 2022-11-23 | 2023-01-10 | Device for back-sealing silicon wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211472925.7A CN115513103A (en) | 2022-11-23 | 2022-11-23 | Device for back sealing silicon wafer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN115513103A true CN115513103A (en) | 2022-12-23 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202211472925.7A Pending CN115513103A (en) | 2022-11-23 | 2022-11-23 | Device for back sealing silicon wafer |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN115513103A (en) |
| TW (1) | TW202331896A (en) |
Citations (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
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| TW202236438A (en) * | 2021-03-12 | 2022-09-16 | 日商信越化學工業股份有限公司 | Film formation device, film formation method, gallium oxide film, and laminate |
| CN115332393A (en) * | 2022-08-23 | 2022-11-11 | 三一集团有限公司 | Local doping method and device |
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| CN1289405A (en) * | 1998-02-02 | 2001-03-28 | 硅谷集团热系统责任有限公司 | Wafer carrier and semiconductor apparatus for processing a semiconductor substrate |
| CN1650043A (en) * | 2001-12-28 | 2005-08-03 | 应用材料有限公司 | Methods for silicon oxide and oxynitride deposition using single wafer low pressure CVD |
| US20060201623A1 (en) * | 2005-03-09 | 2006-09-14 | Yoo Woo S | Low temperature wafer backside cleaning |
| US20080069951A1 (en) * | 2006-09-15 | 2008-03-20 | Juan Chacin | Wafer processing hardware for epitaxial deposition with reduced auto-doping and backside defects |
| TW200913108A (en) * | 2006-09-15 | 2009-03-16 | Applied Materials Inc | Wafer processing hardware for epitaxial deposition with reduced auto-doping and backside defects |
| CN204417589U (en) * | 2014-12-12 | 2015-06-24 | 无锡尚德太阳能电力有限公司 | PECVD plated film lap guard plating step frame |
| CN105239056A (en) * | 2015-10-27 | 2016-01-13 | 上海集成电路研发中心有限公司 | Atomic layer deposition device and method |
| CN205069606U (en) * | 2015-10-27 | 2016-03-02 | 上海集成电路研发中心有限公司 | Silicon chip bears base and atomic layer deposition equipment |
| CN108649008A (en) * | 2018-07-05 | 2018-10-12 | 睿力集成电路有限公司 | One chip cleaning device and method for wafer cleaning after ion implanting |
| CN110491805A (en) * | 2019-08-07 | 2019-11-22 | 长江存储科技有限责任公司 | Semiconductor processing equipment and semiconductor processing |
| CN112593210A (en) * | 2020-12-28 | 2021-04-02 | 宁波恒普真空技术有限公司 | Thin film deposition device based on APCVD technology |
| CN214327878U (en) * | 2020-12-28 | 2021-10-01 | 宁波恒普真空科技股份有限公司 | Thin film deposition device based on APCVD technology |
| CN112466809A (en) * | 2021-02-02 | 2021-03-09 | 北京中硅泰克精密技术有限公司 | Semiconductor process equipment and bearing device |
| TW202236438A (en) * | 2021-03-12 | 2022-09-16 | 日商信越化學工業股份有限公司 | Film formation device, film formation method, gallium oxide film, and laminate |
| CN115332393A (en) * | 2022-08-23 | 2022-11-11 | 三一集团有限公司 | Local doping method and device |
Also Published As
| Publication number | Publication date |
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| TW202331896A (en) | 2023-08-01 |
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Address after: Room 1-3-029, No. 1888, Xifeng South Road, high tech Zone, Xi'an, Shaanxi 710065 Applicant after: Xi'an Yisiwei Material Technology Co.,Ltd. Address before: Room 1-3-029, No. 1888, Xifeng South Road, high tech Zone, Xi'an, Shaanxi 710065 Applicant before: Xi'an yisiwei Material Technology Co.,Ltd. |
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