KR101431087B1 - apparatus for Selctive Epitaxial Growth and Cluster Apparatus - Google Patents

Abstract

The present invention provides an apparatus for selective epitaxial growth. An apparatus for selective epitaxial growth according to the present invention includes a process tube which has an inner tube for receiving a substrate mounting unit which receives multiple substrates, and an outer tube which surrounds the inner tube; a heater assembly which surrounds the process tube; and side nozzles which are vertically arranged at the inside of the process tube; The side nozzles include a first side nozzle and a second side nozzle which respectively inject an etch gas and a deposition gas for selective epitaxial growth; side curtain nozzles which are arranged side by side between the first side nozzle and inject an inert gas to improve the linear property of the first process gas injected from the first side nozzle.

Description

APPARATUS AND CLUSTER APPARATUS FOR SELECTIVE EMPTY GROWTH AND CLUSTER APPARATUS

The present invention relates to a selective epitaxial growth (SEG) device and a cluster facility for selectively growing an epitaxial film on a substrate.

Epitaxial growth is a step of growing a thin film having a crystal structure such as a semiconductor substrate on a semiconductor substrate.

In addition, an insulating film such as an oxide film or a nitride film is formed on a predetermined region of the semiconductor substrate to expose a predetermined region of the semiconductor substrate, and a step of growing an identical or different semiconductor film having the same crystal structure on the exposed semiconductor substrate, Called " Selctive Epitaxial Growth " (SEG). The use of selective epitaxial growth is advantageous in that it is easy to fabricate a semiconductor device having a three-dimensional structure, which is difficult to manufacture with conventional flat plate technology. In a process involving this selective epitaxial growth (SEG), the gas supply and gas distribution on the substrate are very important.

However, in the conventional arrangement type selective single crystal growth apparatus, the reaction gas ejected from the side nozzles flows to the place where the exhaust flow path such as the upper end and the lower end of the inner tube is formed, so that the reaction gas on the substrate does not flow uniformly, There is a problem that the property is deteriorated. Particularly, since there is a gap between the inside of the inner tube and the outer diameter of the substrate, most of the gas injected into the substrate flows into the side clearance without sufficient reaction on the substrate, so that the film formation takes a long time and the flatness of the film quality also has a bad influence.

Patent Document 1: Published Japanese Patent Application No. 10-2012-6281 (published on Jan. 18, 2012)

Embodiments of the present invention seek to provide selective epitaxial growth apparatus and cluster equipment for uniform deposition of selective epitaxial growth.

Embodiments of the present invention are directed to providing a selective epitaxial growth apparatus and a cluster facility capable of providing uniform gas flow on a substrate.

Embodiments of the present invention provide a selective epitaxial growth apparatus and a cluster facility capable of enhancing productivity.

The problems to be solved by the present invention are not limited thereto, and other matters not mentioned can be clearly understood by those skilled in the art from the following description.

According to an aspect of the present invention, there is provided a process tube comprising: an inner tube accommodating a substrate stacking unit in which a plurality of substrates are housed, and an outer tube surrounding the inner tube; A heater assembly installed to surround the process tube; And a side nozzle unit vertically installed inside the process tube; The side nozzle portion is provided with a first side nozzle and a second side nozzle for spraying etch gas and undoped gas for selective epitaxial growth, respectively.

Further, the side nozzle portions are disposed on both sides of the first side nozzle, and side curtain nozzles for injecting an inert gas for improving the straightness of the first process gas injected from the first side nozzles .

Further, the selective epitaxial growth apparatus may further include a boat rotation unit for rotating the substrate loading unit.

The side nozzle portion may further include a pre-deposition nozzle for precoating the inner tube.

The side nozzle unit may further include a lower cleaning nozzle for cleaning the lower end of the inner tube when the inner tube is cleaned.

In addition, the lower cleaning nozzle may have a relatively shorter length than the other side nozzles.

In addition, at least one of the first side nozzle and the second side nozzle may include interval nozzles for injecting gas by at least two intervals in the longitudinal direction of the substrate stacking unit.

In addition, the interval nozzles of the interval nozzles may be provided in a double-pipe structure so that gas stagnation times within the nozzles become equal to each other.

The gap nozzles may be provided with a gap structure for suppressing the gas flow in the gap nozzles, which cover the lower section of the substrate stacking unit, among the gap nozzles, so that the gas stagnation times within the nozzles become the same.

The inner tube may further include a cutout portion provided in a straight line with the first side nozzle.

In addition, the cut-out portion may be provided in an inverted triangular shape which becomes wider from the lower end to the upper end, or a triangular shape which becomes narrower from the lower end to the upper end, or a shape in which the vertically-

In addition, the cut-out portion may be provided in the form of a separate hole facing the injection hole of the first side nozzle.

The control unit may control the rotation speed of the boat rotation unit according to the time of supplying the gas through the side nozzles.

According to another aspect of the present invention, there is provided an apparatus front end module (EFEM) having load ports on which cassettes loaded with substrates are placed; A first load lock chamber connected to the facility front end module through a gate valve and having an internal space capable of selective switching to atmospheric pressure and vacuum pressure; A transfer chamber connected to the first load lock chamber through a gate valve and having a transfer device for substrate transfer; Second load lock chambers connected to the transfer chamber via a gate valve, the second load lock chambers having a substrate loading unit in which the substrates are loaded in a batch manner; And process chambers disposed above each of the second load lock chambers and processing the substrates loaded on the substrate loading unit; The process chamber having a process tube having an inner tube accommodating the substrate loading unit and an outer tube surrounding the inner tube; A rotating unit for rotating the substrate loading unit; A heater assembly installed to surround the process tube; A cluster facility may be provided that includes a first side nozzle and a second side nozzle that are vertically installed inside the process tube and emit etch gas and undoped gas for selective epitaxial growth, respectively.

The apparatus may further include side curtain nozzles disposed on both sides of the first side nozzle and spraying an inert gas to improve the straightness of the first process gas injected from the first side nozzle .

Also, a pre-deposition nozzle for pre-coating the interior of the inner tube vertically inside the process tube; And a lower cleaning nozzle for cleaning the lower end of the inner tube when the inner tube is cleaned.

The inner tube may further include an exhaust port provided on a straight line with the first side nozzle.

In addition, the transfer chamber, the second load lock chamber, and the process chamber may be maintained in a vacuum state.

The cluster facility may further include a vacuum evacuation unit connected to the transfer chamber, the second load lock chamber, and the process chamber, respectively.

The apparatus front end module may further include an index chamber disposed between the load ports and the first load lock chamber, the index chamber having a cassette placed on the load port and a transport apparatus for transporting a substrate between the first load lock chamber and the load lock chamber; And a dummy substrate storage module provided on a side surface of the index chamber, in which dummy substrates are stored.

In addition, the transfer chamber may further include a dummy substrate storage module.

According to the embodiment of the present invention, it is possible to form a uniform film of selective epitaxial growth.

According to the embodiment of the present invention, it is possible to provide a uniform gas flow on the substrate, thereby improving the film quality.

1 is a plan view showing a cluster facility for a selective epitaxial growth process according to an embodiment of the present invention.
2 is a side view of a cluster facility for substrate processing in accordance with an embodiment of the present invention.
3 is a view showing a process chamber.
4 is a plan sectional view of a process tube for explaining a side nozzle portion;
5 is a perspective view showing the side nozzle portion.
Fig. 6 is a view showing various examples of the cut-out portion.
7 is a simulation showing laminar flow over the substrate.
8 is a perspective view showing another example of the side nozzle portion.
9 is a plan sectional view of the process tube to which the side nozzle portion shown in Fig. 8 is applied.
FIGS. 10 and 11 are views showing the inside of the interval nozzle shown in FIG.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, a selective epitaxial growth apparatus and a cluster facility according to an embodiment of the present invention will be described in detail with reference to the accompanying drawings. In the following description of the present invention, a detailed description of known functions and configurations incorporated herein will be omitted when it may make the subject matter of the present invention rather unclear.

In this embodiment, the substrate may be a semiconductor wafer. However, the substrate is not limited to this, and the substrate may be another kind of substrate such as a glass substrate.

1 and 2 are a plan view and a side view showing a cluster facility for a selective epitaxial growth process according to an embodiment of the present invention.

1 and 2, a cluster facility 1 for a selective epitaxial growth process includes a facility front end module 900, a first load lock chamber 200, a transfer chamber 300, and a process module 400).

An Equipment Front End Module (EFEM) 900 is disposed in front of the cluster facility 1. The apparatus front end module 900 is provided with load ports 910 through which the cassette C is loaded and unloaded and a substrate transfer robot 930 through which the substrate is taken out from the cassette C, C and the first load lock chambers 200 to transfer the substrate. Here, an ATM (Atmosphere) robot is used as the substrate transfer robot 930.

The index chamber 920 is positioned between the load ports 910 and the first load lock chamber 200. The index chamber 920 has a rectangular parallelepiped shape including a front panel 922, a rear panel 924 and both side panels 926 and a substrate transfer robot 930 for transferring the substrate is provided therein. Although not shown, the index chamber 920 may include a controlled airflow system, such as vents, laminar flow system, to prevent particulate contaminants from entering the interior space.

The index chamber 920 is opened and closed by a gate valve GV1 for passage of the wafer with the load lock chamber 200 to the rear panel 924 in contact with the load lock chamber 200. [

The load ports 910 are arranged in a line on the front panel 922 of the index chamber 920. The cassette C is loaded and unloaded to the load port 204. [ The cassette C may be a front open unified pod having a front opened body and a door opening and closing the front of the body.

On both side panels 926 of the index chamber 920, a dummy substrate storage section 940 is provided. The dummy substrate storage portion 940 provides dummy substrate storage containers 942 in which the dummy substrates DW are stacked. The dummy substrates DW stored in the dummy substrate storage container 942 of the dummy substrate storage section 940 are used when the processing process module 300 lacks the substrates.

Although not shown, the dummy substrate storage container 942 can be provided in a different chamber than the side of the index chamber. As an example, the dummy substrate storage container 942 may be installed in the transfer chamber 300.

The first load lock chamber 200 is connected to the facility front end module 900 via the gate valve GV1. The first load lock chamber 200 is disposed between the facility front end module 900 and the transfer chamber 300. Three first load lock chambers 200 are provided between the facility front end module 900 and the transfer chamber 300. The first load lock chamber 200 is capable of selectively switching the internal space to atmospheric pressure and vacuum pressure. The first load lock chamber 200 is provided with a loading container 210 on which a substrate is loaded.

The transfer chamber 300 is connected to the first load lock chambers 200 through the gate valve GV2. The transfer chamber 300 is disposed between the first load lock chamber 200 and the process processing module 400. The transfer chamber 300 has a box shape of a rectangular parallelepiped, and a substrate transfer robot 330 for transferring the substrate is provided in the transfer chamber 300. The substrate transfer robot 330 transfers substrates between the first load lock chamber 200 and the substrate loading units 420 provided in the second load lock chamber 410 of the process processing module 400. The substrate transfer robot 330 may include an end effector capable of transferring a single substrate or five substrates. Here, the substrate transfer robot 330 uses a vacuum robot capable of transferring a substrate in a vacuum environment.

A plurality of process modules 400 may be connected to the transfer chamber 300 through a gate valve GV3. For example, the transfer chamber 300 may be connected to three process modules 400, which are selective epitaxial growth devices, and the number thereof may be variously provided.

Referring to FIG. 2, the cluster facility 1 includes a vacuum exhaust unit 500 and an inert gas supply unit 600. The vacuum evacuation unit 500 is connected to each of the first load lock chamber 200, the transfer chamber 300, the second load lock chamber 410 and the process chamber 100, Gt; 510 < / RTI > The inert gas supply unit 600 supplies an inert gas to each chamber for forming a differential pressure between the first load lock chamber 200, the transfer chamber 300, the second load lock chamber 410 and the process chamber 100 And a gas supply line 610.

The index chamber 110 and the first load lock chamber 200, the first load lock chamber 200 and the transfer chamber 300, and the transfer chamber 300 and the second load lock chamber 410 are connected to the gate valve GV1, GV2, GV3) to independently control the respective chamber pressures.

3 is a view showing a process chamber.

1 to 3, the process processing module 400, which is a selective epitaxial growth apparatus, includes a second load lock chamber 410 and a process chamber 100.

The second load lock chamber 410 is connected to the transfer chamber 300 via the gate valve GV3. The second load lock chamber 410 includes an elevating member 430 for loading / unloading the substrate stacking unit 130 in which the substrates are mounted in a batch manner into the inner space of the process tube 110 of the process chamber 100 / RTI > In one example, the substrate loading unit 130 may include a boat with slots to allow loading of 25, 50 sheets of substrates. The process chamber 100 is disposed above the second load lock chamber 410.

The process chamber 100 may include a device configuration for selective epitaxial growth (SEG). In one example, the process chamber 100 includes a process tube 110, a heater assembly 120, a substrate loading unit 130, a side nozzle unit 140, a boat rotation unit 160, a control unit 170, .

The process tube 110 includes an inner tube 112 in which the substrate stacking unit 130 is accommodated and an outer tube 114 surrounding the inner tube 112. The process tube 110 is loaded with a substrate loading unit 130 on which a substrate is loaded to provide an internal space in which a selective epitaxial growth process is performed on the substrates. The process tube 110 may be made of a material that can withstand high temperatures, such as quartz. The inner tube 112 and the outer tube 114 are formed in the shape of a circular tube with the upper portion closed. In particular, the inner tube 112 has a cutout 113 formed along one side thereof in the longitudinal direction (vertical direction). The cutout 113 is provided in the form of a slot. The cutout 113 is formed in a straight line with the first side nozzle 142.

Fig. 6 is a view showing various examples of the cut-out portion.

As shown in FIG. 6, the cutout 113 has an inverted triangular shape in which the width becomes wider from the lower end to the upper end, and a triangular shape in which the width becomes narrower from the lower end to the upper end as in the first figure on the left and the second figure on the left. It can be provided in an unfavorable shape. In addition, the cutout 113 may be provided in the form of an individual hole opposite to the injection hole of the first side nozzle 142 as shown in the third figure on the left. In addition, the cutout 113 can be provided with the same width as the first figure on the right side.

Referring again to FIGS. 1 to 3, the process tube 110 includes an exhaust port 119 for forcedly sucking and exhausting the inside air to reduce the pressure inside the flange 118, A nozzle port 118 for mounting a side nozzle portion 140 for injecting a process gas into the process tube 110 is provided. The exhaust port 119 is provided for discharging the air in the process tube 110 to the outside in the process. A vacuum exhausting device (not shown) is connected to the exhaust port 119, and the process gas supplied to the process tube 110 through the exhaust port 119 is exhausted and internally decompressed. The heater assembly 120 is installed to surround the process tube 110.

The substrate loading unit 130 may have slots into which a plurality of (for example, 50) substrates are inserted. The substrate stacking unit 130 is mounted on the seal cap 180 and the seal cap 180 is loaded into the process tube 110 by an elevator member 430 which is an elevator device or unloaded out of the process tube 110 do. When the substrate loading unit 130 is loaded into the process tube 110, the seal cap 180 engages the flange 111 of the process tube 110. On the other hand, a sealing member such as an O-ring for sealing is provided at a portion where the flange 111 of the process tube 110 and the seal cap 180 are in contact with each other, 110 and the seal cap 180. As shown in FIG.

On the other hand, the boat rotation unit 160 provides a rotational force for rotating the substrate loading unit 130. The boat rotation unit 160 may be a motor. The boat rotation part 160 is installed on the seal cap 180. The boat rotation unit 160 may be provided with a sensor for sensing the rotational speed of the substrate loading unit 130. The rotation speed of the substrate loading unit 130 sensed by the sensor may be provided to the control unit 170.

The control unit 170 controls the operation of the boat rotation unit 160. The control unit 170 controls the rotation speed of the boat rotation unit 160 according to the time of supplying the gas supplied through the nozzles of the side nozzle unit 140.

Fig. 4 is a plan sectional view of a process tube for explaining the side nozzle portion, and Fig. 5 is a perspective view showing a side nozzle portion.

3 to 5, the side nozzle portion 140 is provided perpendicularly to the inside of the process tube 110. As shown in FIG. Side nozzle portion 140 may include a plurality of nozzles that supply gases to substrate surface 110 that contribute to selective epitaxial growth. In one example, the side nozzle portion 140 includes a first side nozzle 142, a second side nozzle 144, a pair of side curtain nozzles 152, a pre-deposition nozzle 154, And a nozzle 156.

The side nozzle portion 140 is supplied with the gases contributing to selective epitaxial growth to the substrate surface through the supply portion 190. The supply unit 190 may selectively provide the side nozzle unit 140 with a depo gas, an etching gas, a cleaning gas, and an inert gas (purge gas). For example, gases such as DCS, SiH 4, and Si 2 H 6 may be used as the undoped gas, and gases such as Cl 2 and HCL may be used as the etching gas. In the case of doping with impurities, a doping gas such as B 2 H 6, .

The first side nozzle 142 is a nozzle for spraying etch gas for selective epitaxial growth and is positioned so as to face the cutout 113 provided in the inner tube 112. A pair of side curtain nozzles 152 are arranged on both sides of the first side nozzle 142. The side curtain nozzle 152 injects an inert gas such that the etching gas injected from the first side nozzle 142 goes straight toward the cutout 113 of the inner tube 112. As an example, the inert gas may include N2 gas, Ar gas, and H2 gas.

7 is a simulation showing laminar flow over the substrate. 7, the remaining nozzles except for the first side nozzle and the side curtain nozzle are omitted.

Referring to FIG. 7, in the present invention, the inert gas injected from the first side nozzle 142 is injected from the side curtain nozzle 152 to improve linearity, thereby forming a laminar flow in a horizontal direction on the upper side of the substrate So that the uniformity of the substrate can be further improved.

The second side nozzle 144 is provided on one side of the side curtain nozzle 152 as a nozzle for spraying the deposit gas for selective epitaxial growth. The second side nozzle 144 is disposed at a certain angle with the exhaust port 113.

The pre-depallon nozzle 154 injects the deposition gas for the purpose of pre-coating the interior of the process tube 110 after in-situ cleaning and pre-processes the substrate environment of the process tube 110 Can be provided as a condition to make. Of course, the pre-coating may be performed using the second side nozzle 144. However, since the pre-vacuum nozzle 154 is separately installed and operated, the frequency of use of the second side nozzle 144 is reduced, 144 and the thin film formation inside the nozzle can be reduced to prolong the duration of the in-to-clean period.

The lower cleaning nozzle 156 is provided for cleaning the lower end of the inner tube 112 during the in-situ cleaning process. The lower cleaning nozzle 156 is shorter in length than the other nozzles as shown in FIGS. 3 and 5, and the cleaning is performed around the boat receiving unit 138 between the substrate loading unit 130 and the seal cap 180 (For example, ClF3, F2). The lower cleaning nozzle 156 is sprayed from the second side nozzle 144 in a weak range that is out of the spray range of the second side nozzle 144, 138) for the purpose of cleaning. The lower cleaning nozzle 156 can shorten the in-situ cleaning time.

A selective epitaxial growth method using the process chamber 100 will be briefly described as follows.

First, when a plurality of substrates are stacked on the substrate stacking unit 130, the substrate stacking unit 130 is carried into the process tube 110 by the lifting operation of the lifting device 430. At this time, the lower end of the process tube 110 is sealed by the seal cap 180. Next, a vacuum evacuating device (not shown) is feedback-controlled such that the inside of the process tube 110 is at a desired pressure (degree of vacuum). In addition, the interior of the process tube 110 is heated by the heater assembly 120 to a desired temperature suitable for selective epitaxial growth. When the inside of the process tube 110 is heated by the heater assembly 120, the energization state of the heater assembly 120 is feedbacked based on the temperature information detected by the temperature sensor so that the inside of the process tube 110 becomes a desired temperature distribution. Respectively. Subsequently, the substrate rotating unit 130 is rotated by the boat rotating unit 160 to rotate the substrates.

Each of the nozzles of the side nozzle unit 140 supplies the process gases such as the undoped gas, the etching gas, and the inert gas for a predetermined period of time through the supply unit. The gases injected into the inner tube pass through the substrates and are exhausted to the incision of the inner tube.

On the other hand, each nozzle of the side nozzle portion can inject gas in various ways. First, a method of simultaneously supplying the undoped gas and the etching gas. Secondly, after supplying the depo gas and the etching gas together, the impurity is further removed (3 min) by supplying the etching gas only (20 min), the depo gas is supplied again for a certain time (15 min) And the process of removing impurities is repeatedly carried out. Then, the purge gas supply (30 sec), the etching gas supply (15 sec), and the purge gas supply (40 sec) for removing residue are performed repeatedly for the third time, supplying only the defoaming gas (40 sec) And the like. Through this process, a higher-quality selective epitaxial film can be formed on the substrate.

On the other hand, the purge gas may be supplied simultaneously with the depo gas and the etching gas for each step of growing the epitaxial layer on the substrate, and may be supplied before or after the supply of the depo gas or the etching gas, May be supplied prior to the supply of the gas and continue to be supplied during the supply of these gases.

As described above, the process chamber 100 according to an embodiment of the present invention is capable of supplying the process gas horizontally by providing the side nozzle portion 140 in the vertical direction to the inner tube, and in particular, the first side nozzle 142 Side curtain nozzles 152 are disposed on the left and right sides to improve the straightness of the etching gas, thereby improving the gas flow on the substrate and improving the film forming quality.

FIG. 8 is a perspective view showing another example of the side nozzle portion, and FIG. 9 is a plan sectional view of the process tube to which the side nozzle portion shown in FIG. 8 is applied.

Referring to FIGS. 8 and 9, the first side nozzle 142 may include interval nozzles for injecting a gas into a plurality of sections with respect to the longitudinal direction of the substrate stacking unit 130. FIG. For example, the first side nozzle 1420 includes first and second section nozzles 142-1 and 142-2 for injecting gas into two sections. The first section nozzle 142-1 injects gas into the upper section of the substrate stacking unit 130 and the second section nozzle 142-2 injects gas into the lower section of the substrate stacking unit 130. [ The first section nozzle 142-1 and the second section nozzle 142-2 are positioned adjacent to each other and are positioned in a straight line so as to face the cutout 113 provided in the inner tube 112. [

The second side nozzles 144 may include interval nozzles that inject gas into the plurality of sections with respect to the longitudinal direction of the substrate stacking unit 130. As an example, the second side nozzle 144 includes first and second section nozzles 144-1 and 144-2. The first section nozzle 144-1 ejects gas to the upper section of the substrate loading unit 130 and the second section nozzle 144-2 ejects the gas to the lower section of the substrate loading unit 130. [

Since the lengths of the first section nozzles 142-1 and 144-2 and the second section nozzles 142-2 and 142-2 are different from each other, the gas stagnation time (gas retention time) inside the nozzle differs during gas injection. For example, the gas injection in the second section nozzle 142-2 may be faster than the gas injection in the first section nozzle 142-1. This can cause a difference in the thickness of the substrates located above the substrate loading unit 130 and the thickness of the substrates located below the substrate loading unit 130.

Figs. 10 and 11 are views showing the inside of the second section nozzle shown in Fig.

10, according to an example, the second section nozzle 142-2 may be provided with a double pipe structure such that the gas stagnation time (gas retention time) is equal to that of the first section nozzle 142-1 . That is, the second section nozzle 142-2 includes an outer tube 10 and an inner tube 20, and the injection holes 12 and 22 are formed in the outer tube 10 and the inner tube 20, respectively, The injection ports 22 of the inner pipe and the injection ports 12 of the outer pipe are provided with different injection directions. Thereby, the gas stagnation time in the second section nozzle 142-2 can be prolonged.

Referring to FIG. 11, according to another example, the second section nozzle 142-2 may include a confinement structure 40 (see FIG. 11) for suppressing the gas flow so that the gas stagnation time becomes equal to the first section nozzle 142-1 ) May be provided. The confinement structure 40 includes a plurality of blocking plates 42 and the gas flow is slowed by the blocking plates 42 so that the gas congestion time (gas retention time) in the second zone nozzle 142-2 Can be extended.

The side nozzle portion having such interval nozzles can be applied not only to the epitaxial growth process but also to the heat treatment apparatus for other deposition processes.

The foregoing description is merely illustrative of the technical idea of the present invention, and various changes and modifications may be made by those skilled in the art without departing from the essential characteristics of the present invention. Therefore, the embodiments disclosed in the present invention are intended to illustrate rather than limit the scope of the present invention, and the scope of the technical idea of the present invention is not limited by these embodiments. The scope of protection of the present invention should be construed according to the following claims, and all technical ideas falling within the scope of the same shall be construed as falling within the scope of the present invention.

100: process chamber 110: process tube
120: heater assembly 130: substrate loading unit
140: side nozzle part 160: boat rotation part
170: control unit 190:

Claims (20)

A selective epitaxial growth apparatus comprising:
A process tube having an inner tube in which a plurality of substrates are accommodated and an outer tube surrounding the inner tube;
A heater assembly installed to surround the process tube;
And a side nozzle unit vertically installed inside the process tube;
The side nozzle portion
A first side nozzle and a second side nozzle for respectively injecting etch gas and undoped gas for selective epitaxial growth;
Side curtain nozzles arranged side by side with the first side nozzles interposed therebetween for spraying an inert gas for improving the straightness of the first process gas injected from the first side nozzles Gt; delete The method according to claim 1,
Further comprising a boat rotation unit for rotating the substrate loading unit. The method according to claim 1,
The side nozzle portion
Further comprising a pre-depo nozzle for pre-coating the interior of the inner tube. The method according to claim 1,
The side nozzle portion
Further comprising a lower cleaning nozzle for cleaning the lower end of the inner tube when the inner tube is cleaned. 6. The method of claim 5,
The lower cleaning nozzle
Wherein the length of the second epitaxial growth layer is shorter than that of the other side nozzles. The method according to claim 1,
At least one of the first side nozzle and the second side nozzle
And a plurality of periodic nozzles for injecting a gas for at least two or more intervals in the longitudinal direction of the substrate stacking unit. 8. The method of claim 7,
The section nozzles
Wherein a section nozzle that serves as a lower section of the substrate stacking unit among the section nozzles is provided in a double pipe structure so that the gas stagnation time within the nozzle becomes the same. 8. The method of claim 7,
The section nozzles
Wherein a gap structure for suppressing the flow of gas is provided in an interval nozzle that covers a lower section of the substrate stacking unit among the interval nozzles so that the gas stagnation time within the nozzle becomes the same. The method according to claim 1,
The inner tube
Wherein the first side nozzle and the second side nozzle are provided in a dome shape with a top portion closed, and the side surface further includes a cutout portion provided on a straight line with the first side nozzle. 11. The method of claim 10,
The cut-out portion may have an inverted triangular shape that widens from the lower end to the upper end, a triangular shape that becomes narrower from the lower end to the upper end, or a shape that is not vertically symmetrical or that faces the injection holes of the first side nozzle Characterized in that it is provided in the form of an individual hole. The method of claim 3,
And a control unit for controlling the operation of the boat rotation unit,
The control unit
Wherein the rotational speed of the boat rotating part is controlled in accordance with the time of supplying the gas through the side nozzle part. CLAIMS What is claimed is:
A facility front end module (EFEM) having load ports on which cassettes loaded with substrates are placed;
A first load lock chamber connected to the facility front end module through a gate valve and having an internal space capable of selective switching to atmospheric pressure and vacuum pressure;
A transfer chamber connected to the first load lock chamber through a gate valve and having a transfer device for substrate transfer;
Second load lock chambers connected to the transfer chamber via a gate valve, the second load lock chambers having a substrate loading unit in which the substrates are loaded in a batch manner; And
And process chambers disposed above each of the second load lock chambers and processing substrates loaded on the substrate loading unit;
The process chamber
A process tube having an inner tube accommodating the substrate loading unit and an outer tube surrounding the inner tube;
A rotating unit for rotating the substrate loading unit;
A heater assembly installed to surround the process tube;
A first side nozzle and a second side nozzle vertically installed inside the process tube, respectively, for spraying etch gas and undoped gas for selective epitaxial growth;
And side curtain nozzles disposed side by side across the first side nozzles and injecting an inert gas to improve the straightness of the first process gas injected from the first side nozzles. delete 14. The method of claim 13,
A pre-deposition nozzle installed vertically inside the process tube for pre-coating the interior of the inner tube;
And a lower cleaning nozzle for cleaning the lower end of the inner tube when the inner tube is cleaned. 14. The method of claim 13,
The inner tube
And a cutout provided in a straight line with the first side nozzle. 14. The method of claim 13,
Wherein the transfer chamber, the second load lock chamber and the process chamber are maintained in a vacuum state. 18. The method of claim 17,
The cluster facility
And a vacuum evacuation unit connected to the transfer chamber, the second load lock chamber, and the process chamber, respectively. 14. The method of claim 13,
The facility front end module
An index chamber disposed between the load ports and the first load lock chamber and having a cassette placed on the load port and a transport apparatus for transporting a substrate between the first load lock chambers; And
And a dummy substrate storage module provided on a side surface of the index chamber, the dummy substrate storage module storing dummy substrates. 14. The method of claim 13,
The cluster facility
And a dummy substrate storage module in which dummy substrates are stored in the transfer chamber.

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