KR101555238B1 - Semiconductor Apparatus of Furnace Type - Google Patents

Abstract

The present invention provides a furnace type semiconductor facility. The furnace type semiconductor equipment of the present invention comprises a process tube; A substrate loading unit positioned within the process tube; And nozzles for injecting the process gas into the substrates mounted on the substrate loading unit; The nozzles include interval nozzles for jetting gas by at least two intervals in the longitudinal direction of the substrate stacking unit.

Description

[0001] DESCRIPTION [0002] Furnace type semiconductor equipment [

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor manufacturing apparatus, and more particularly to a furnace type semiconductor facility.

BACKGROUND ART [0002] In recent years, semiconductor device manufacturing technology has been developed to improve integration degree, reliability, and response speed in order to satisfy various needs of consumers. Generally, a semiconductor device is manufactured by forming a pattern having electrical characteristics by performing a deposition process, a diffusion process, a photolithography process, and the like on a silicon wafer.

In the manufacture of semiconductor devices, low pressure chemical vapor deposition processes and diffusion processes are typically performed in a vertical furnace. Specifically, the furnace type semiconductor equipment includes a heater block and an outer tube made of quartz and an inner tube in the heater block. The inner tube is provided with a boat for loading wafers, and a plurality of wafers loaded on the boat are simultaneously introduced into a process space, i.e., a process chamber, and a deposition or diffusion process is performed.

When a process is performed using a furnace type semiconductor facility, the process variation is very large depending on the degree of distribution of the gas in the equipment. Therefore, it is very important to supply the gas distribution in the entire region where the process is performed in the facility, that is, in the process chamber, to be almost uniform.

However, conventionally, in order to uniformly distribute the gas distribution in the process chamber, the injection ports are formed in accordance with the positions of the respective wafers to supply the gas, but the amount of gas injected from each injection port is not the same, The gas retention time is different depending on the position of the injection port, which affects wafer thin film formation.

The present invention is to provide a furnace type semiconductor facility capable of keeping the residence time of the gas in the nozzle the same.

It is another object of the present invention to provide a furnace type semiconductor facility capable of supplying a stable and uniform gas.

The present invention also provides a furnace type semiconductor device capable of forming a uniform thin film between wafers.

The problems to be solved by the present invention are not limited thereto, and other matters not mentioned can be clearly understood by those skilled in the art from the following description.

According to one aspect of the present invention, a process tube; A substrate loading unit positioned within the process tube; And nozzles for injecting the process gas into the substrates mounted on the substrate loading unit; And the nozzles include interval nozzles for injecting gas in at least two or more intervals in the longitudinal direction of the substrate stacking unit.

Also, the interval nozzles may be provided in a double pipe structure for extending the gas residence time within the nozzle.

Also, the sectional nozzle of the double pipe structure may be a section nozzle having a relatively short length in the process tube.

Also, the interval nozzle may include an inner nozzle connected to the process gas supply line and having first injection holes; And an outer nozzle having second ejection holes formed to face the substrate stacking unit and installed to surround the inner nozzle.

In addition, the first injection holes of the inner nozzle may inject the process gas in a direction different from the second injection holes of the outer nozzle.

In addition, the gap nozzle may be provided with a cavity structure for suppressing gas flow in the nozzle in the inner space.

The confinement structure may include air flow disturbance plates spaced apart from each other by a predetermined distance along the longitudinal direction of the gap nozzle, and a support installed in the longitudinal direction of the gap nozzle to support the air flow disturbance plates.

In addition, the gap nozzle may have a gas inlet direction from top to bottom.

In addition, the interval nozzles include a first interval nozzle for injecting gas into an upper section of the substrate loading unit, and a second interval nozzle for injecting gas into a lower section of the substrate loading unit; The first interval nozzle and the second interval nozzle may have opposite gas inlet directions.

The gap nozzle may include a first body through which gas flows from bottom to top, a bending body extending from the top of the first body, and a second body extending from the end of the bending body and flowing from top to bottom .

According to one aspect of the present invention, a process tube; A substrate loading unit positioned within the process tube; And nozzles for injecting the process gas into the substrates mounted on the substrate loading unit; The nozzles may be provided with a double pipe structure for extending the gas residence time inside the nozzles.

Also, the interval nozzle may include an inner nozzle connected to the process gas supply line and having first injection holes; And an outer nozzle having second ejection holes formed to face the substrate stacking unit and installed to surround the inner nozzle.

According to the embodiment of the present invention, it is possible to form a uniform thin film between the substrates.

Further, according to the embodiment of the present invention, it is possible to provide a uniform gas flow on the substrate, thereby improving the film quality.

1 is a plan view showing a cluster facility for a selective epitaxial growth process according to an embodiment of the present invention.
2 is a side view of a cluster facility for substrate processing in accordance with an embodiment of the present invention.
3 is a view showing a process chamber.
4 is a plan sectional view of a process tube for explaining a side nozzle portion;
5 is a perspective view showing the side nozzle portion.
Fig. 6 is a view showing various examples of the cut-out portion.
FIGS. 7 and 8 are views showing the inside of the interval nozzle shown in FIG. 5. FIG.
9 and 10 are views showing another example of the interval nozzle.

Hereinafter, a furnace type semiconductor device for thin film deposition according to an embodiment of the present invention will be described in detail with reference to the accompanying drawings. In the following description of the present invention, a detailed description of known functions and configurations incorporated herein will be omitted when it may make the subject matter of the present invention rather unclear.

In this embodiment, the substrate may be a semiconductor wafer. However, the substrate is not limited to this, and the substrate may be another kind of substrate such as a glass substrate.

1 and 2 are a plan view and a side view showing a cluster facility for a thin film deposition process according to an embodiment of the present invention.

1 and 2, a cluster facility 1 for a thin film deposition process includes a facility front end module 900, a first load lock chamber 200, a transfer chamber 300, and a process module 400, .

An Equipment Front End Module (EFEM) 900 is disposed in front of the cluster facility 1. The apparatus front end module 900 is provided with load ports 910 through which the cassette C is loaded and unloaded and a substrate transfer robot 930 through which the substrate is taken out from the cassette C, C and the first load lock chambers 200 to transfer the substrate. Here, an ATM (Atmosphere) robot is used as the substrate transfer robot 930.

The index chamber 920 is positioned between the load ports 910 and the first load lock chamber 200. The index chamber 920 has a rectangular parallelepiped shape including a front panel 922, a rear panel 924 and both side panels 926 and a substrate transfer robot 930 for transferring the substrate is provided therein. Although not shown, the index chamber 920 may include a controlled airflow system, such as vents, laminar flow system, to prevent particulate contaminants from entering the interior space.

The index chamber 920 is opened and closed by a gate valve GV1 for passage of the wafer with the load lock chamber 200 to the rear panel 924 in contact with the load lock chamber 200. [

The load ports 910 are arranged in a line on the front panel 922 of the index chamber 920. The cassette C is loaded and unloaded to the load port 204. [ The cassette C may be a front open unified pod having a front opened body and a door opening and closing the front of the body.

On both side panels 926 of the index chamber 920, a dummy substrate storage section 940 is provided. The dummy substrate storage portion 940 provides dummy substrate storage containers 942 in which the dummy substrates DW are stacked. The dummy substrates DW stored in the dummy substrate storage container 942 of the dummy substrate storage section 940 are used when the processing process module 300 lacks the substrates.

Although not shown, the dummy substrate storage container 942 can be provided in a different chamber than the side of the index chamber. As an example, the dummy substrate storage container 942 may be installed in the transfer chamber 300.

The first load lock chamber 200 is connected to the facility front end module 900 via the gate valve GV1. The first load lock chamber 200 is disposed between the facility front end module 900 and the transfer chamber 300. Three first load lock chambers 200 are provided between the facility front end module 900 and the transfer chamber 300. The first load lock chamber 200 is capable of selectively switching the internal space to atmospheric pressure and vacuum pressure. The first load lock chamber 200 is provided with a loading container 210 on which a substrate is loaded.

The transfer chamber 300 is connected to the first load lock chambers 200 through the gate valve GV2. The transfer chamber 300 is disposed between the first load lock chamber 200 and the process processing module 400. The transfer chamber 300 has a box shape of a rectangular parallelepiped, and a substrate transfer robot 330 for transferring the substrate is provided in the transfer chamber 300. The substrate transfer robot 330 transfers substrates between the first load lock chamber 200 and the substrate loading units 420 provided in the second load lock chamber 410 of the process processing module 400. The substrate transfer robot 330 may include an end effector capable of transferring a single substrate or five substrates. Here, the substrate transfer robot 330 uses a vacuum robot capable of transferring a substrate in a vacuum environment.

A plurality of process modules 400 may be connected to the transfer chamber 300 through a gate valve GV3. For example, the transfer chamber 300 may be connected to three process modules 400, which are selective epitaxial growth devices, and the number thereof may be variously provided.

Referring to FIG. 2, the cluster facility 1 includes a vacuum exhaust unit 500 and an inert gas supply unit 600. The vacuum evacuation unit 500 is connected to each of the first load lock chamber 200, the transfer chamber 300, the second load lock chamber 410 and the process chamber 100, Gt; 510 < / RTI > The inert gas supply unit 600 supplies an inert gas to each chamber for forming a differential pressure between the first load lock chamber 200, the transfer chamber 300, the second load lock chamber 410 and the process chamber 100 And a gas supply line 610.

The index chamber 110 and the first load lock chamber 200, the first load lock chamber 200 and the transfer chamber 300, and the transfer chamber 300 and the second load lock chamber 410 are connected to the gate valve GV1, GV2, GV3) to independently control the respective chamber pressures.

3 is a view showing a process chamber.

Referring to FIGS. 1 to 3, a furnace type semiconductor facility 400, which is a thin film deposition apparatus, includes a second load lock chamber 410 and a process chamber 100.

The second load lock chamber 410 is connected to the transfer chamber 300 via the gate valve GV3. The second load lock chamber 410 includes an elevating member 430 for loading / unloading the substrate stacking unit 130 in which the substrates are mounted in a batch manner into the inner space of the process tube 110 of the process chamber 100 / RTI > In one example, the substrate loading unit 130 may include a boat with slots to allow loading of 25, 50 sheets of substrates. The process chamber 100 is disposed above the second load lock chamber 410.

The process chamber 100 may include a device configuration for thin film deposition. In one example, the process chamber 100 includes a process tube 110, a heater assembly 120, a substrate loading unit 130, a side nozzle unit 140, a boat rotation unit 160, a control unit 170, .

The process tube 110 includes an inner tube 112 in which the substrate stacking unit 130 is accommodated and an outer tube 114 surrounding the inner tube 112. The process tube 110 is loaded with the substrate loading unit 130 on which the substrate is loaded to provide an internal space on which the thin film deposition process proceeds. The process tube 110 may be made of a material that can withstand high temperatures, such as quartz. The inner tube 112 and the outer tube 114 are formed in the shape of a circular tube with the upper portion closed. In particular, the inner tube 112 has a cutout 113 formed along one side thereof in the longitudinal direction (vertical direction). In one example, the cutout 113 is provided in a slotted form. The cutout 113 may be formed in a straight line with the first side nozzle 142.

Fig. 6 is a view showing various examples of the cut-out portion.

As shown in FIG. 6, the cutout 113 has an inverted triangular shape in which the width becomes wider from the lower end to the upper end, and a triangular shape in which the width becomes narrower from the lower end to the upper end as in the first figure on the left and the second figure on the left. It can be provided in an unfavorable shape. In addition, the cutout 113 may be provided in the shape of an individual hole opposite to the injection hole of the first side nozzle 142 as shown in the third figure on the left. In addition, the cutout 113 can be provided with the same width as the first figure on the right side.

Referring again to FIGS. 1 to 3, the process tube 110 includes an exhaust port 119 for forcedly sucking and exhausting the inside air to reduce the pressure inside the flange 118, A nozzle port 118 for mounting a side nozzle portion 140 for injecting a process gas into the process tube 110 is provided. The exhaust port 119 is provided for discharging the air in the process tube 110 to the outside in the process. A vacuum exhausting device (not shown) is connected to the exhaust port 119, and the process gas supplied to the process tube 110 through the exhaust port 119 is exhausted and internally decompressed. The heater assembly 120 is installed to surround the process tube 110.

The substrate loading unit 130 may have slots into which a plurality of (for example, 50) substrates are inserted. The substrate stacking unit 130 is mounted on the seal cap 180 and the seal cap 180 is loaded into the process tube 110 by an elevator member 430 which is an elevator device or unloaded out of the process tube 110 do. When the substrate loading unit 130 is loaded into the process tube 110, the seal cap 180 engages the flange 111 of the process tube 110. On the other hand, a sealing member such as an O-ring for sealing is provided at a portion where the flange 111 of the process tube 110 and the seal cap 180 are in contact with each other, 110 and the seal cap 180. As shown in FIG.

On the other hand, the boat rotation unit 160 provides a rotational force for rotating the substrate loading unit 130. The boat rotation unit 160 may be a motor. The boat rotation part 160 is installed on the seal cap 180. The boat rotation unit 160 may be provided with a sensor for sensing the rotational speed of the substrate loading unit 130. The rotation speed of the substrate loading unit 130 sensed by the sensor may be provided to the control unit 170.

The control unit 170 controls the operation of the boat rotation unit 160. The control unit 170 controls the rotation speed of the boat rotation unit 160 according to the time of supplying the gas supplied through the nozzles of the side nozzle unit 140.

Fig. 4 is a plan sectional view of a process tube for explaining the side nozzle portion, and Fig. 5 is a perspective view showing a side nozzle portion.

3 to 5, the side nozzle portion 140 is provided perpendicularly to the inside of the process tube 110. As shown in FIG. The side nozzle portion 140 may include a plurality of nozzles that supply gases to the substrate surface that contribute to thin film deposition by the process tube 110. As an example, the side nozzle portion 140 may include a first side nozzle 142, a second side nozzle 144, and a pair of side curtain nozzles 152.

The side nozzle unit 140 receives the gases contributing to the thin film growth to the surface of the substrate through the supply unit 190. The supply unit 190 may selectively supply the first process gas, the second process gas, the cleaning gas, and the inert gas (purge gas) to the side nozzle unit 140. For example, the second process gas may include a depressurizing gas such as DCS, SiH4, or Si2H6. An etching gas such as Cl2 or HCL may be used as the first process gas. For the purpose of doping the impurity, B2H6, PH3 Or the like may be used.

The first side nozzle 142 is a nozzle for injecting the first process gas and is positioned in a straight line so as to face the cutout 113 provided in the inner tube 112. The first side nozzles 142 may include interval nozzles that inject gas into the plurality of sections with respect to the longitudinal direction of the substrate stacking unit 130. For example, the first side nozzle 142 includes first and second section nozzles 142-1 and 142-2 for injecting gas into two sections. The first section nozzle 142-1 injects gas into the upper section of the substrate stacking unit 130 and the second section nozzle 142-2 injects gas into the lower section of the substrate stacking unit 130. [ The first section nozzle 142-1 and the second section nozzle 142-2 are positioned adjacent to each other and are positioned in a straight line so as to face the cutout 113 provided in the inner tube 112. [

A pair of side curtain nozzles 152 are arranged on both sides of the first side nozzle 142. The side curtain nozzle 152 injects an inert gas so that the etching gas injected from the first side nozzle 142 goes straight toward the cutout 113 of the inner tube 112. As an example, the inert gas may include N2 gas, Ar gas, and H2 gas.

In the present invention, the first process gas injected from the first side nozzle 142 is improved in linearity by the inert gas injected from the side curtain nozzle 152, and laminar flow is formed in the horizontal direction on the upper side of the substrate, Can be further improved.

The second side nozzle 144 is a nozzle for spraying the second process gas and the second side nozzle 144 is provided to one side of the side curtain nozzle 152. The second side nozzle 144 is disposed at a certain angle with the exhaust port 113.

The second side nozzles 144 may include interval nozzles that inject gas into the plurality of sections with respect to the longitudinal direction of the substrate stacking unit 130. As an example, the second side nozzle 144 includes first and second section nozzles 144-1 and 144-2. The first section nozzle 144-1 ejects gas to the upper section of the substrate loading unit 130 and the second section nozzle 144-2 ejects the gas to the lower section of the substrate loading unit 130. [

Since the first section nozzles 142-1 and 142-1 and the second section nozzles 142-2 and 142-2 have different lengths in the process tube, the gas stagnation time (gas residence time) in the nozzle during gas injection is different can do. For example, the length of the second section nozzles 142-2 and 144-2 is shorter than that of the first section nozzles 142-1 and 144-1. Therefore, the gas injection in the second section nozzle 142-2 may be faster than the gas injection in the first section nozzle 142-1. This can cause a difference in the thickness of the substrates located above the substrate loading unit 130 and the thickness of the substrates located below the substrate loading unit 130. However, this problem can be solved by the following nozzle structure.

FIGS. 7 and 8 are views showing the inside of the second section nozzle shown in FIG.

Referring to FIG. 7, according to an example, the second section nozzle 142-2 may be provided with a double pipe structure such that the gas stagnation time (gas residence time) is equal to that of the first section nozzle 142-1 . That is, the second section nozzle 142-2 includes an outer tube 10 and an inner tube 20, and the injection holes 12 and 22 are formed in the outer tube 10 and the inner tube 20, respectively, The injection ports 22 of the inner pipe and the injection ports 12 of the outer pipe are provided with different injection directions. Thereby, the gas stagnation time in the second section nozzle 142-2 can be prolonged.

Referring to FIG. 8, according to another example, the second section nozzle 142-2 may include a confinement structure 40 (see FIG. 8) for suppressing gas flow so that the gas stagnation time becomes equal to the first section nozzle 142-1 ) May be provided. The confinement structure 40 includes air flow disturbance plates 42 arranged at predetermined intervals along the longitudinal direction of the section nozzles and support rods 44 installed in the longitudinal direction of the section nozzles to support the air flow disturb plates 42 can do. That is, the gas flow in the process gas is slowed by the airflow obstruction plates 42, so that the gas congestion time (gas retention time) in the second section nozzle 142-2 can be extended.

In the present embodiment, the double pipe structure is illustrated and described as being applied to the sectional nozzle type, but the double pipe structure can be applied not only to the sectional nozzle but also to the single nozzle type.

9 and 10 are views showing another example of the interval nozzle.

Referring to FIG. 9, for example, the first side nozzle 142a includes first and second interval nozzles 142-1a and 142-2a that inject gas by two intervals. The first section nozzle 142-1a injects gas into the upper section of the substrate loading unit 130 and the second section nozzle 142-2a injects gas into the lower section of the substrate loading unit 130. [ The first section nozzle 142-1a and the second section nozzle 142-2a are positioned adjacent to each other and are arranged in a straight line so as to face the cutout 113 (shown in FIG. 4) provided in the inner tube 112 .

On the other hand, the second section nozzle 142-2a is characterized in that the gas inlet direction is directed from top to bottom. That is, the first interval nozzle 142-1a and the second interval nozzle 142-2a are provided with opposite gas inlet directions. For example, the first section nozzle 142-1a is normally provided with an inlet for introducing gas from the supply section 190 at the lower end of the nozzle, so that the gas inlet direction is directed upward from below. The second section nozzle 142-2a is provided at the upper end of the nozzle with an inlet through which the gas flows from the supply section 190, so that the gas inlet direction is directed from top to bottom.

Referring to FIG. 10, for example, the first side nozzle 142b includes first and second section nozzles 142-1b and 142-2b for injecting gas into two sections. Here, the second section nozzle 142-2b is provided in the form of a nozzle of a return structure. That is, the second section nozzle 142-2b includes a first body a1, a bending body a2, and a second body a3.

The bending body a2 is bent to extend from the upper end of the first body a1 to be connected to the second body a3 and the second body a3, Is a portion extending from the end of the bending body a2 and provided with a return flow in which gas flows from top to bottom.

The foregoing description is merely illustrative of the technical idea of the present invention, and various changes and modifications may be made by those skilled in the art without departing from the essential characteristics of the present invention. Therefore, the embodiments disclosed in the present invention are intended to illustrate rather than limit the scope of the present invention, and the scope of the technical idea of the present invention is not limited by these embodiments. The scope of protection of the present invention should be construed according to the following claims, and all technical ideas within the scope of equivalents should be construed as falling within the scope of the present invention.

100: process chamber 110: process tube
120: heater assembly 130: substrate loading unit
140: side nozzle part 160: boat rotation part
170: control unit 190:

Claims (12)

A furnace type semiconductor equipment comprising:
Process tube;
A substrate loading unit positioned within the process tube;
And nozzles for injecting the process gas into the substrates mounted on the substrate loading unit;
The nozzles
Sectional nozzles for spraying gas by at least two or more intervals in the longitudinal direction of the substrate stacking unit,
The section nozzle
And the gas inlet direction is directed from the top to the bottom. The method according to claim 1,
Some of the section nozzles
Wherein the nozzle is provided with a double pipe structure for extending the gas residence time within the nozzle. 3. The method of claim 2,
Wherein the sectional nozzles of the double pipe structure are relatively shorter than the other sectional nozzles. The method according to claim 1,
Some of the section nozzles
An inner nozzle connected to the process gas supply line and having first injection holes; And
And an outer nozzle having second ejection holes formed to face the substrate stacking unit and installed to surround the inner nozzle. 5. The method of claim 4,
Wherein the first injection holes of the inner nozzle inject a process gas in a direction different from the second injection holes of the outer nozzle. The method according to claim 1,
The section nozzle having a relatively shorter length than the other section nozzles among the section nozzles
Wherein a cavity structure for suppressing gas flow in the nozzle is provided in the inner space. The method according to claim 6,
The confinement structure
Air flow disturbance plates arranged at predetermined intervals along the longitudinal direction of the section nozzle,
And a supporter mounted in the longitudinal direction of the gap nozzle to support the airflow obstruction plates. delete A furnace type semiconductor equipment comprising:
Process tube;
A substrate loading unit positioned within the process tube;
And nozzles for injecting the process gas into the substrates mounted on the substrate loading unit;
The nozzles
Sectional nozzles for spraying gas by at least two or more intervals in the longitudinal direction of the substrate stacking unit,
The section nozzles
A first section nozzle for injecting gas into an upper section of the substrate stacking unit;
And a second section nozzle for injecting gas into a lower section of the substrate stacking unit;
Wherein the first interval nozzle and the second interval nozzle have opposite gas inlet directions. A furnace type semiconductor equipment comprising:
Process tube;
A substrate loading unit positioned within the process tube;
And nozzles for injecting the process gas into the substrates mounted on the substrate loading unit;
The nozzles
Sectional nozzles for spraying gas by at least two or more intervals in the longitudinal direction of the substrate stacking unit,
The section nozzle
And a second body extending from an upper end of the bending body and provided with a return flow in which gas flows from top to bottom, Furnace type semiconductor equipment characterized by. delete delete

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