JPH09320506A - Electron ray exposure device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an electron ray exposure device such that transfer can be achieved through a short time of exposure even if a pattern to be drawn on a sample has no repeated patterns or is made up of various patterns. SOLUTION: This device is provided with an electron emitting device 1, in which a number of openings 27 serving as very small electron emission holes are arranged lengthwise and crosswise at small intervals, an application control device 2 by which some of electron emission elements 24 in time openings 27 are selected and independently applied with electron exciting voltages, and an application power supply 3. The number and position coordinates of the electron emission elements 24 to which the electron exciting voltages should be applied are preprogrammed, and the electron emission device 1 is operated, so that no matter what kind of pattern is contained in a pattern to be drawn, or whether or not repeated patterns exist, a region with a certain area is exposed in the same exposure time to complete transfer of the entire pattern.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electron beam exposure apparatus used for manufacturing integrated circuits of semiconductor devices and masks for forming integrated circuits.

[0002]

2. Description of the Related Art In recent years, efforts have been made to miniaturize the dimensions of each element of a semiconductor integrated circuit in order to improve the density and speed of the semiconductor integrated circuit. In order to reduce the element size, an optical exposure apparatus using ultraviolet light requires a shorter wavelength of light, a higher NA (numerical aperture), an optical improvement of the exposure apparatus such as a deformed light source, and a phase shift. A new type of exposure method such as a mask was used. In parallel with this, development of a new exposure method such as electron beam or X-ray exposure has been advanced. In particular, various attempts using electron beam exposure have been proposed for forming an integrated circuit having a fine pattern such as a 256 megabit DRAM.

These electron beam exposure apparatuses are classified into a point beam type and a variable rectangular beam type. In each of these, the pattern is divided into unit minute areas or rectangular areas, and the point beam is deflected and scanned or according to the pattern. Since the electron beam having a beam spot of a large size is deflected and a pattern is drawn with one stroke for exposure, the exposure requires a long time. For example, in the above-mentioned 256 megabit DRAM,
The exposure time per chip takes about 10 minutes,
The exposure time required is about 100 times longer than that of the light exposure method. Further, the exposure apparatus itself has a drawback that it is more expensive than the optical exposure apparatus. A method has been proposed in which a part of a periodic pattern group is prepared as a mask to shorten the exposure time when the pattern is repeated, but it is not applicable when the pattern is not repeated.

H. Yasuda and others: Fast Elect
ron Beam Lithography System with1024 Beam Individu
ally Controlled by Blanking Aperture Array, Jpn.J.
Appl.Phys., Vol. 32, No. 12B, Dec. (1993) 6012-601
In order to shorten the above-mentioned exposure time, the contents reported in 7., as shown in FIGS. 7 and 8, the beam traveling to each of the multiple openings for forming multiple electron beams. It uses a blanking aperture array (BAA) arranged with a beam blanking electrode that largely deflects the direction so as not to reach the sample. This method has an advantage that the time required for pattern drawing is short even if the pattern is not repeated.

However, in this method, since there is only one electron beam source, it is necessary to irradiate the BAA in a wider range by an electron beam when the number of openings is increased, and the electron beam intensity decreases, After all, there is a problem that it takes a long time to irradiate a target electron beam exposure amount on a sample. Also,
Since the wiring of the beam blanking electrode provided in each of the openings of the BAA is drawn out to the peripheral portion through the gaps of the other openings, increasing the number of openings increases the number of openings and the number of openings. It is necessary to widen the space, and the entire area of the BAA increases rapidly, but the ability of the electron optical system to image the electron beam pattern passing through the opening of the BAA on the sample without distortion is exceeded. In order to prevent this, there is a problem that the area where the BAA openings are arranged is limited to a certain range, and the openings cannot be densely arranged within this range.

In order to solve such a problem, therefore, the contents disclosed in Japanese Patent Laid-Open No. 7-153655 are arranged such that electron-emitting devices are arranged in a grid pattern as electron-emitting sources as shown in FIG. This is a structure in which wiring for controlling electron emission of each device is built in the lower substrate.
According to this method, even if the number of electron-emitting devices that are electron-emitting sources is increased, the amount of emitted electrons does not change, and the electron beam intensity does not decrease. Further, since the wiring structure for controlling the electron emission of each element is embedded in the lower substrate, the elements can be arranged densely. as a result,
It has a feature that the time required for exposure can be shortened. In addition, since the vacuum micro elements arranged in a lattice form are electron emission sources, there is an advantage that an illumination-requiring optical system for irradiation is unnecessary as compared with the case where the BAA aperture array is used.

[0007]

However, in the electron beam exposure apparatus of the type using this electron-emitting device, in the wiring structure of the electron-emitting device which is the electron-emitting source, the wiring connection at the pad portion has a sufficiently large pad area. The vertical wiring just below each electron-emitting device has a fine vertical structure with a size of 1 μm or less, and is separated from the pad array region. In the electron-emitting device at a different position, since the depth of the vertical wiring is deep, the yield at the manufacturing stage is low, and as a result,
There is a problem that the device price becomes expensive, and since the pattern of each layer of the multilayer structure for fine wiring connection is different, a mask including separate patterns is required. Has the problem of becoming expensive.

An object of the present invention is to provide an inexpensive electron beam exposure apparatus capable of transferring with high precision by exposure in a short time even if a pattern to be drawn has no repetitive pattern and is composed of various patterns.

Another object of the present invention is to provide a method of manufacturing an electron-emitting device, which can produce an electron-emitting device using electron-emitting devices in which electron-emitting sources can be arranged densely with high yield.

[0010]

An electron beam exposure apparatus of the present invention comprises a plurality of flat-plate-shaped extraction electrodes and a plurality of openings each of which has a plurality of openings vertically and horizontally formed on one main surface of the extraction electrode. An electron-emitting device, and an electron-emitting device having a control electrode wiring structure for controlling the operation of the electron-emitting device, the electron-emitting device being stacked and arranged on a plane different from the one main surface of the extraction electrode. A control power source that selects an emission element, applies a voltage between the extraction electrode and the electron emission element to independently emit electrons from the electron emission element, and an acceleration electrode for accelerating the emitted electrons. ,
It has a converging means for converging the accelerated electrons and a deflecting means for deflecting the converged electrons.

An electron-emitting device having a large number of extremely small electron-emitting ports arranged vertically and horizontally and a control power source for arbitrarily selecting electron-emitting devices in the electron-emitting device and independently applying an electron excitation voltage thereto are provided. By providing the position coordinates of the electron-emitting device to which the electron excitation voltage is to be applied in advance and operating the electron-emitting device, no matter what kind of pattern is included in the pattern to be drawn or repeated pattern Regardless of the presence or absence, a region having a constant area can be exposed with the same exposure time, and as a result, the pattern to be drawn can be exposed in a short time.

According to an embodiment of the present invention, the acceleration electrode is a plate-shaped conductive member arranged in parallel with the extraction electrode, and the electron beam passes through the opening of the extraction electrode so as to face the opening. A hole is formed.

According to another embodiment of the present invention, the converging means is a plate-shaped conductive member disposed in parallel with the extraction electrode, and faces the opening of the extraction electrode to direct the electron beam. A through hole is formed.

According to still another embodiment of the present invention, the control power source has the same number of applied power sources as the number of the electron-emitting devices, and the applied power sources are arbitrarily selected to apply a voltage to the corresponding electron-emitting devices. It has a means for applying.

The method of manufacturing an electron-emitting device according to the present invention includes a step of forming a wiring pattern and an electrode pad pattern on one main surface of an insulating layer, a step of further forming an insulating layer on the wiring pattern, and an electrode pad pattern. The step of embedding a columnar contact in the insulating layer so as to connect to the connection pad portion at the end of the formed lower wiring pattern and the electrode pad, and after repeating these steps one or more times, A step of forming a wiring pattern and an electrode pad pattern, and the structure formed through the above steps is cut at an angle with respect to the main surface so that the sections of the wiring pattern are periodically arranged. And a step of periodically forming electron-emitting devices on the cut surface.

Since the vertical wirings directly under each electron-emitting device have the same simple structure, the yield at the manufacturing stage becomes high, and as a result, the device price becomes lower than the conventional one. Further, since the patterns of each layer of the multilayer structure for fine wiring connection are the same, a mask including separate patterns is not required, and as a result, the device price is also low. According to the embodiment of the present invention, a silicon oxide film or a silicon nitride film on a silicon substrate is used as the insulating layer.

According to another embodiment of the present invention, glass ceramics is used as the insulating layer.

[0018]

Next, embodiments of the present invention will be described with reference to the drawings.

FIG. 1 is a block diagram of an electron beam exposure apparatus according to an embodiment of the present invention, and FIG. 2 is a partially cutaway perspective view of the electron emission apparatus 1 in FIG.

In this electron beam exposure apparatus, as shown in FIG. 1 and FIG. 2, the leading end of each of the flat-plate-shaped lead-out electrodes 21 and a large number of openings 27 vertically and horizontally formed on one main surface of the lead-out electrodes 21. The electron-emitting device 1 having a large number of electron-emitting devices 24 that exposes the electron-emitting device 24 and an arbitrary electron-emitting device 24 are selected, a voltage is applied between the extraction electrode 21 and the electron-emitting device 24, and the electron-emitting devices 24 are independently formed. An applied power source 3 and an application control unit 2 which are control power sources for further emitting electrons, an acceleration electrode 4 for accelerating the emitted electrons, and a high voltage power source 5 for applying a high voltage potential between the acceleration electrode 4 and the electron emission device. , A blanking electrode 6 that deflects the electron beam and removes the electron beam from the orbit, a reduction lens 7 that is a converging unit that converges the accelerated electron beam, and an electron beam that is converged by the reduction lens 7 is further predetermined. A projection lens 8 for imaging the sample 11 on the stage 10 by reducing the magnification changing the imaging position of the electron beam spot is composed of a deflecting means rendering position deflection electrodes 9.

As shown in FIG. 2, the electron-emitting device 1 has an opening 2 vertically and horizontally formed on the surface of a flat lead electrode 21.
7 is provided with a large number of electron-emitting devices 24 whose front end is exposed and which is embedded in an insulating film 29. This electron-emitting device 2
In order to apply an electric field between the electrode 4 and the extraction electrode 22, the electron-emitting device 24 has wirings 28a, 29b, 28c, 28d.
... and contacts 25a, 25b, ... are connected to a planar electron-emitting-device lower pad 23 having an angle with the surface of the extraction electrode 21 of the electrode wiring structure 22, and these pads are connected. Reference numeral 23 is connected to the application controller 2 in FIG. 1 by an electric wire cable (not shown). Then, the position coordinates to which a voltage is to be applied to the electron-emitting device 24 stored in the application control unit 2 are read out, and each electron is applied by the application power supply 3 in FIG. 1 based on the timing signal from the timing adjustment unit 10 in FIG. A voltage is applied to the emitting element 24. The applied electron-emitting device 24 emits electrons by the electric field. FIG. 1 shows an example in which the accelerating electrode 4 is provided so as to surround the entire electron-emitting device 1, but the accelerating electrode 4 is not necessarily limited to this, and is parallel to the extraction electrode 21 of the electron-emitting device 1. The accelerating electrode 4 may be provided. In that case, the acceleration electrode 4 may be provided with an opening corresponding to the position of each electron-emitting device 24 so that the electron from the electron-emitting device 24 can pass through. In addition, the electron-emitting device 24
It is advantageous to provide a flat plate-shaped converging electrode as a converging means in parallel with the extraction electrode 21 so that the electrons emitted from the device can be sufficiently converged.

In this embodiment, the size of the opening 27 is set to 0.5 μm in diameter in order to obtain higher resolution.
It was arranged vertically and horizontally at a pitch of 0 μm. The reduction ratio of the projected image is set to 1/20 so that the projected image of one electron-emitting device 24 can be transferred as a spot image having a diameter of 0.025 μm. Furthermore, this electron-emitting device 24 is
2.5 μm × 2.5 arranged on the sample 11 regardless of the pattern shape or arrangement.
A region having a size of μm can be treated with one electron irradiation. In the trial, the voltage applied to the extraction electrode 21 with respect to the electron-emitting device 24 was set to 10.6 V, and the acceleration voltage applied to the acceleration electrode 4 with respect to the electron-emitting device 24 was set to 30 KV.
Then, the resist having a sensitivity of 10 μC / cm ² applied to the sample surface 11 was irradiated with the electrons emitted from the electron-emitting device 24, and a good pattern was obtained at a voltage application time at each irradiation spot, that is, an exposure time of 0.5 μsec. Was able to be transcribed.

The applied power source 3 is composed of a plurality of electron-emitting devices 2.
It is desirable to provide the same number as the electron-emitting devices 24 so that 4 can be applied at an appropriate timing. Then, the delay due to the wiring length and switching is eliminated and the electron-emitting device 24
In order to eliminate the variation in the amount of emitted electrons due to the variation in the characteristics, the applied voltage of each applied power supply 3 is adjusted in the unit of 0.001V. Thereby, each electron-emitting device 24
The variation in the amount of emitted electrons is less than 1%, and uneven transfer of the pattern is eliminated.

Here, the electron-emitting device 1 was able to emit electrons at an applied voltage of 10.6 V and further accelerate at an accelerating voltage of 30 KV to make the resist on the sample 11 sensitive, as described above. Further, it can be used with various applied voltages and accelerating voltages, and can also be sensitive to resists having various photosensitive characteristics. In this embodiment,
The applied power source 3 can be set to several tens of volts which is less than the allowable voltage value, and the high voltage power source 5 can be varied from 10 KV to 50 KV.

The electron-emitting device 1 shown in FIG. 2 can be manufactured by using a normal semiconductor circuit manufacturing process. The manufacturing process of the electron emission device 1 will be described with reference to FIGS.
A description will be given based on the process diagrams of FIGS.

As shown in FIG. 3A, the silicon substrate 3
An insulating layer 26 made of silicon oxide is formed on the first layer 1 by thermal oxidation or a CVD method to have a layer thickness of about 1.5 μm, and a molybdenum film having a thickness of 0.3 μm is formed on the insulating layer 26 by a photolithography technique. The wiring 28 is formed by removing the molybdenum film in an unnecessary region by dry etching technology.
d and the pad 23d are formed. At this time, the wiring 28
The period of d is 1.0 μm. Next, as shown in FIG. 3B, a silicon oxide film having a thickness of 1.0 μm is formed by the CVD method so as to completely cover the wiring 28d and the pad 23d, and the end portion of the wiring 28d and the position of the pad 23 are formed. In addition, an opening is formed by photolithography and dry etching, and a molybdenum film having a thickness of 0.3 μm is formed on the entire surface by a sputtering method. Then, the surface is flattened by a chemical polishing method, and only the opening is contacted. To form. Next, as shown in FIG. 3C, a molybdenum film having a thickness of 0.3 μm is formed by a sputtering method as in the case shown in FIG. 3A, and then unnecessary by photolithography technology and dry etching technology. The molybdenum film in the appropriate region is removed to form the wiring 28c and the pad 23c. At this time, the positions of the wiring 28c and the pad 23c are formed so as to be shifted by one week from the positions of the wiring 28d and the pad 23d on which the contact 25 is formed.
The contact 25 is not formed below the end of the pad 23c, and the contact 25 is arranged only below the pad 23c. Thereafter, the insulating layer formation, contact formation, wiring and pad formation are repeated to form a laminated structure as shown in FIG. At this time, the wiring of each layer and the mask pattern used in the photolithography process when forming the pad 23 are all the same, and the alignment is only shifted by one cycle. In addition, contact 2 of each layer
The mask patterns used in the photolithography process when forming 5 are all the same, and the alignment is 1
It is just a cycle offset. Therefore, the cost of the mask manufacturing method is constant even if the number of layers is increased, which is economical.

Next, as shown in FIGS. 4 (a) and 4 (b), cutting is performed at the positions of straight lines AA 'and BB' so as to include a necessary region, and the cut surface of AA 'is cut. After being polished to be sufficiently flat and normal, a 0.3 μm-thick molybdenum film is formed by a sputtering method, and a molybdenum film in an unnecessary region is removed by a photolithography technique and a dry etching technique to lower the electron-emitting device lower pad 30. To form. At this time, if the AA ′ plane is perpendicular to the surface of the silicon substrate used in FIGS. 3A and 3B, the period of the wiring 28 exposed on the AA ′ plane connects AA ′. 1.0 μm in both the direction and the direction perpendicular to it
It has become. The electron-emitting-device lower pad 30 is arranged so as to match the position of the wiring 28, and a 0.5 μm-thick silicon oxide film corresponding to the insulating film 29 is further formed on the entire surface. Next, a 0.35 μm thick tungsten film corresponding to the extraction electrode 21 is formed on the entire surface of this silicon oxide film, and the tungsten film and the silicon oxide film are selectively etched and removed by a lithography technique to position the electron-emitting device 24. 0.5 in the area where
An opening 27 of μm is formed so that the lower pad of the electron-emitting device is exposed. Then, an aluminum film having a thickness of 0.15 μm is further formed on the opening 27 and the entire surrounding region, and a molybdenum film having a thickness of 0.8 μm is further formed thereon by a metal vapor deposition method. In this vapor deposition, as the vapor deposition progresses, the opening area of the aperture gradually becomes smaller, and the phenomenon that the tip formed by the deposition becomes a cone shape is used to make an electron emission with a sharp tip having an optimum shape as a cathode. The element 24 is obtained. next,
When the aluminum film is removed by wet etching, the molybdenum film other than the electron-emitting device 24 is removed by lift-off. Then, a fine metal wire is connected to the pad 23 formed on the side surface of the electrode wiring structure 22 by a wire bonding device, drawn out as a connection cable, and connected to the application controller 2 in FIG.

FIG. 5 is a diagram showing a pattern to be transferred to the sample 11, and FIG. 6 is a diagram showing the positional relationship between the arrangement of the electron-emitting devices 24 of the electron-emitting device 1 and the drawing pattern. A case where the pattern shown in FIG. 8 is transferred to the sample 11 with this electron beam exposure apparatus will be described. First, referring to FIG. 5, C
The pattern of the area A1 on the upper side of the paper with respect to the line C'is a pattern formed by connecting the patterns indicated by D.
Therefore, as shown in FIG. 6, the number and coordinate values of the electron-emitting devices 24 to which the voltage of the electron-emitting device 1 should be applied are stored in the program in advance so that the pattern shown by D can be drawn by one-time transfer. A voltage is applied to the electron-emitting device 24 at the position shown to transfer the pattern D. The pattern of the area A1 is formed by repeatedly transferring this D pattern while changing the transfer position by the drawing position deflection electrode 9.

Next, the stage 11 is moved to position the sample 11 within the area where the area A2 can be drawn, the area A2 is divided into areas that can be transferred at one time, and the divided individual area patterns are prepared in advance. A program for the number and coordinate values of the electron-emitting devices 24 created according to the above is called, and the drawing position is changed by the operation of the drawing position deflection electrode 9 or the movement of the stage 10 to transfer individual patterns,
The pattern of the area A2 is completed.

As described above, a power source to be applied to 100 × 100, that is, 10,000 electron-emitting devices 24 is provided, the pattern data is divided into squares each having a side of 2.5 μm, and the data in each square is set to 0. By programming whether or not a pattern exists in a minute unit area divided into 025 μm units, a square area with a side of 2.5 μm can be exposed with the same exposure time regardless of the type of pattern and the presence or absence of repeated patterns. I was able to.

In the above description of the embodiment,
In the production of the electrode wiring structure 22, the method of sequentially forming each layer has been described, but the method is not limited to this method, and for example, two layers or four layers may be formed.
A similar structure can be obtained by laminating them so that they are laminated to each other, and polishing and removing the excess substrate portion.

Further, in the above-mentioned embodiments, the electrode wiring structure 22 has been described as an example manufactured by using a normal semiconductor circuit manufacturing process. However, the invention is not limited to this. You may use the manufacturing process similar to the glass-ceramic laminated substrate for mounting many integrated circuit chips which comprise a processing apparatus. In that case, a mixture of lead borosilicate crystallized glass and alumina or a mixture of borosilicate glass, quartz glass, and cordierite glass is used as the material for the insulating layer, and the material for the wiring, contacts, and pads is In addition to refractory metals such as molybdenum and tungsten,
Metals such as copper, gold and silver can be used. When such a glass-ceramic laminated substrate is used, a glass-ceramic powder is slurried and then formed into a tape shape to obtain a flat green sheet. After cutting the green sheet into a predetermined size, a contact for electrically connecting the layers is formed, and a wiring pattern and a pad pattern are printed on the green sheet by a screen printing method. A metal paste such as gold, silver or palladium is used as the conductor paste for the wiring pattern and the pad pattern. After that, a large number of green sheets are laminated and pressure-bonded and sintered to be used as an electrode wiring structure.

When a green sheet is used, it is easy to laminate and press-bond a large number of sheets at once, and therefore the number of lamination steps is smaller than in the case where a semiconductor circuit manufacturing process is used, so that a laminated structure can be manufactured. It is characterized by a short period of time. Further, in terms of the price of materials and devices, it is cheaper than the case where a semiconductor circuit manufacturing process is used, which is also advantageous in this respect. On the other hand, in terms of forming a fine pattern, it is inferior to the case of using a semiconductor circuit manufacturing process, and it suffices to use them properly in consideration of these two points.

[0034]

As described above, according to the present invention, an electron-emitting device in which a large number of extremely small electron-emitting ports are arranged vertically and horizontally with a fine pitch, and an electron-emitting device in the electron-emitting device are arbitrarily selected and respectively By providing the control power supply for independently applying the electron excitation voltage, the position coordinates of the electron emitting element to which the electron excitation voltage is applied can be programmed in advance to operate the electron emitting device, and thus the pattern to be drawn. Even if any kind of pattern is included in the pattern, or a region having a constant area can be exposed with the same exposure time regardless of the presence or absence of a repeated pattern, as a result, the pattern to be drawn can be exposed in a short time. In addition to that, since the vertical wiring directly under each electron-emitting device has the same simple structure,
The yield at the manufacturing stage is increased, and as a result, the device price is lower than the conventional one. In addition, since the patterns of the respective layers of the multilayer structure for connecting the fine wiring are the same, there is no need for a mask including separate patterns, and as a result, the device cost is also reduced.

[Brief description of drawings]

FIG. 1 is a configuration diagram of an electron beam exposure apparatus according to an embodiment of the present invention.

FIG. 2 is a partially cutaway perspective view of the electron emission device 1 in FIG.

FIG. 3 is a diagram showing a manufacturing process of the electron-emitting device 1.

FIG. 4 is a diagram showing a manufacturing process of the electron-emitting device 1.

FIG. 5 is a diagram showing a pattern to be transferred to a sample.

FIG. 6 is a diagram showing a positional relationship between an array of electron-emitting devices of the electron-emitting device 1 and a drawing pattern.

FIG. 7 is a diagram showing a configuration of an exposure apparatus using a blanking aperture array (BAA).

FIG. 8 is a schematic plan view showing a configuration of a blanking aperture array (BAA).

FIG. 9 is a partially cutaway perspective view showing an example of an electron emission device in which electron emission elements are arranged in a grid pattern as an electron emission source.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Electron emission device 2 Application control part 3 Application power supply 4 Acceleration electrode 5 High voltage power supply 6 Blanking electrode 7 Reduction lens 8 Projection lens 9 Drawing position deflection electrode 10 Stage 11 Sample 21 Extraction electrode 22 Electrode wiring structure 23 Pad 24 Electron emission device 25a, 25b Contact 26 Insulating layer 27 Opening 28a, 28b, 28c, 28d Wiring 29 Insulating film 30 Pad just under electron-emitting device 31 Silicon substrate

─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. ⁶ Identification code Internal reference number FI Technical display location H01J 37/147 H01J 37/147 C H01L 21/027 H01L 21/30 541B

Claims (7)

[Claims] 1. A flat-plate-shaped extraction electrode, a plurality of electron-emitting devices each of which has its tip exposed to a large number of openings formed in one main surface of the extraction electrode in a vertical and horizontal direction, and the one main electrode of the extraction electrode. An electron-emitting device having a control electrode wiring structure for controlling the operation of the electron-emitting device, the electron-emitting device being stacked and arranged on a plane different from the plane; A control power source for applying a voltage between the two to independently emit electrons from the electron-emitting device, an accelerating electrode for accelerating the emitted electrons, and a converging means for converging the accelerated electrons. An electron beam exposure apparatus having a deflecting means for deflecting the converged electrons. 2. The accelerating electrode is a plate-shaped conductive member arranged in parallel with the extraction electrode, and a hole is formed facing the opening of the extraction electrode so as to pass the electron beam. Item 1. The electron beam exposure apparatus according to Item 1. 3. The converging means is a plate-shaped conductive member arranged in parallel with the extraction electrode, and a hole through which the electron beam passes is formed facing the opening of the extraction electrode. The electron beam exposure apparatus according to claim 1 or 2. 4. The control power source has the same number of applied power sources as the number of the electron-emitting devices, and has means for arbitrarily selecting the applied power sources and applying a voltage to the corresponding electron-emitting devices. The electron beam exposure apparatus according to claim 1. 5. A step of forming a wiring pattern and an electrode pad pattern on one main surface of the insulating layer, a step of further forming an insulating layer thereon, and an end portion of the already formed lower wiring pattern. A step of embedding a columnar contact in an insulating layer so as to connect to a certain connection pad part and an electrode pad, and a step of forming a wiring pattern and an electrode pad pattern of the uppermost layer after repeating these steps one or more times. And a step of cutting the structure formed through the above steps at an angle with respect to the main surface so that the cross-sections of the wiring pattern are periodically arranged. The method for manufacturing an electron-emitting device according to claim 1, further comprising the step of forming an electron-emitting device on the substrate. 6. The method of manufacturing an electron-emitting device according to claim 5, wherein a silicon oxide film or a silicon nitride film on a silicon substrate is used as the insulating layer. 7. The method of manufacturing an electron-emitting device according to claim 5, wherein glass ceramics is used as the insulating layer.