JP3223956B2 - Electron emission device, electron beam exposure device, and method of manufacturing electron emission device - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electron beam exposure apparatus used for manufacturing an integrated circuit of a semiconductor device and a mask for forming the integrated circuit.

[0002]

2. Description of the Related Art In recent years, efforts have been made to miniaturize the dimensions of each element of a semiconductor integrated circuit in order to improve the density and speed of the semiconductor integrated circuit. In order to reduce the element size, an optical exposure apparatus using ultraviolet light requires a shorter wavelength of light, a higher NA (numerical aperture), an optical improvement of the exposure apparatus such as a deformed light source, and a phase shift. A new type of exposure method such as a mask was used. In parallel with this, development of a new exposure method such as electron beam or X-ray exposure has been advanced. In particular, various attempts using electron beam exposure have been proposed for forming an integrated circuit having a fine pattern such as a 256 megabit DRAM.

[0003] These electron beam exposure apparatuses include a point beam type and a variable rectangular beam type. In each case, the pattern is divided into a unit minute area or a rectangular area, and the point beam is deflected and scanned, or the pattern is adjusted according to the pattern. Since an electron beam having a beam spot of a large size is deflected to draw a pattern and perform exposure, a long time is required for exposure. For example, in the above-mentioned 256 megabit DRAM,
Exposure time per chip takes about 10 minutes,
An exposure time that is about 100 times longer than the light exposure method is required. Further, there is a disadvantage that the exposure apparatus itself is more expensive than the optical exposure apparatus. When a pattern has repetition, a method of shortening the exposure time by preparing a part of a periodic pattern group as a mask has been proposed, but cannot be applied when the pattern does not have repetition.

Further, H. Yasuda and others: Fast Elect
ron Beam Lithography System with1024 Beam Individu
ally Controlled by Blanking Aperture Array, Jpn.J.
Appl.Phys., Vol. 32, No. 12B, Dec. (1993) 6012-601
In order to shorten the above-mentioned exposure time, the contents reported in Section 7 show that the beam travels to each of a number of openings for forming a number of electron beams as shown in FIGS. It uses a blanking aperture array (BAA) arranged with a beam blanking electrode that largely deflects the direction so as not to reach the sample. This method has an advantage that the time required for pattern drawing is short even without repeating the pattern.

However, in this method, since there is only one electron beam source, it is necessary to irradiate a wider range of BAA with an electron beam when the number of openings is increased, and the electron beam intensity is reduced. Eventually, there is a problem that it takes a long time to irradiate the target electron beam exposure amount onto the sample. Also,
The wiring of the beam blanking electrode provided in each of the openings of the BAA is drawn out to the peripheral portion through the gap between the other openings. It is necessary to increase the interval, and the overall area of the BAA increases rapidly, but exceeds the ability of the electron optical system to image the electron beam pattern passing through the opening of the BAA on the sample without distortion. In order to prevent this, the area where the openings of the BAA are arranged is limited to a certain range, and there is a problem that the openings cannot be densely arranged within this range.

In order to solve such a problem, Japanese Unexamined Patent Publication No. Hei 7-153655 discloses a technique in which electron-emitting devices are arranged in a grid as electron-emitting sources as shown in FIG. The wiring for controlling the electron emission of each element is formed in the lower substrate.
According to this method, even if the number of electron-emitting devices, which are electron-emitting sources, is increased, the amount of emitted electrons does not change, and the electron beam intensity does not decrease. Further, since a wiring structure for controlling electron emission of each element is embedded in the lower substrate, the elements can be densely arranged. as a result,
The feature is that the time required for exposure can be reduced. Further, since the vacuum micro-elements arranged in a lattice form are the electron emission sources, there is also an advantage that an illumination required optical system for irradiation is not required as compared with the case of using the BAA opening arrangement.

[0007]

However, in the electron beam exposure apparatus using the electron-emitting device, in the wiring structure of the electron-emitting device as the electron-emitting source, the wiring connection at the pad portion has a sufficiently large pad area. However, the vertical wiring directly under each electron-emitting device has a fine vertical structure with a size of 1 μm or less, and is separated from the pad array area. In the position of the electron-emitting device at the position where the vertical wiring is deep, the yield in the manufacturing stage is low, and as a result,
There is a problem that the device cost is high, and a mask including a separate pattern is required because the pattern of each layer of the multilayer structure for fine wiring connection is different from each other. Is expensive.

An object of the present invention is to provide an inexpensive electron-emitting device which can be transferred with high accuracy by short-time exposure even when a pattern to be drawn has various patterns without repetitive patterns.
An object of the present invention is to provide an apparatus, a manufacturing method thereof, and an electron beam exposure apparatus.

Another object of the present invention is to provide a method of manufacturing an electron emitting device which can manufacture an electron emitting device using electron emitting elements in which electron emitting sources can be arranged densely with a high yield.

[0010]

According to the present invention, there is provided an electron-emitting device comprising: a plurality of flat-plate-shaped extraction electrodes; An electron-emitting device, and a control electrode wiring structure that includes a pad, is arranged and stacked on each plane of a plurality of insulating layers intersecting the one main surface of the extraction electrode, includes a pad, and controls operation of the electron-emitting device. And the one of the insulating layers
The end surface facing the surface is a cut surface, and the extraction electrode is
It is formed on the cut surface. Further, the electron beam exposure apparatus of the present invention selects the above-mentioned electron-emitting device and any of the above-mentioned electron-emitting devices, applies a voltage between the extraction electrode and the electron-emitting device, and independently supplies a voltage from the electron-emitting device. It has a control power supply for emitting electrons, an accelerating electrode for accelerating the emitted electrons, a converging means for converging the accelerated electrons, and a deflecting means for deflecting the converged electrons.

An electron emission device in which a large number of extremely small electron emission ports are arranged vertically and horizontally at a fine pitch, and a control power supply for arbitrarily selecting an electron emission element in the electron emission device and independently applying an electron excitation voltage. By pre-programming the position coordinates of the electron-emitting device to which the electron excitation voltage is to be applied and operating the electron-emitting device, the pattern to be drawn may include any type of pattern or a repetitive pattern. A region having a constant area can be exposed with the same exposure time regardless of the presence or absence, and as a result, the pattern to be drawn can be exposed in a short time.

According to an embodiment of the present invention, the acceleration electrode is a plate-shaped conductive member disposed in parallel with the extraction electrode, and the electron beam passes through the opening of the extraction electrode in opposition to the opening. A hole is formed.

According to another embodiment of the present invention, the converging means is a plate-shaped conductive member disposed in parallel with the extraction electrode.

According to still another embodiment of the present invention, the control power supply has the same number of applied power supplies as the number of the electron-emitting devices, and arbitrarily selects these applied power supplies and applies a voltage to the corresponding electron-emitting device. It has means for applying.

[0015] In the method of manufacturing the electron emission device of the present invention includes the steps of forming a wiring pattern and an electrode pad pattern on a flat surface of the insulating layer, a step of further forming an insulating layer thereon, already Embedding a columnar contact in the insulating layer so as to connect to the connection pad portion and the electrode pad at the end of the formed lower wiring pattern; and repeating these steps one or more times, a step of forming a wiring pattern and an electrode pad pattern, the cross-section of more than the wiring pattern was cut at an angle a structure formed through a step with respect to said flat surface is to be periodically arranged And a step of periodically forming an electron-emitting device on the cut surface.

Since the vertical wiring immediately below each electron-emitting device has the same simple structure, the yield in the manufacturing stage is increased, and as a result, the device price is lower than in the past. Further, since the pattern of each layer of the multi-layer structure for connecting the fine wiring is the same, a mask including a separate pattern is not required, and as a result, the device price is also reduced. According to an embodiment of the present invention, a silicon oxide film or a silicon nitride film on a silicon substrate is used as the insulating layer.

According to another embodiment of the present invention, a glass ceramic is used as the insulating layer.

[0018]

Next, embodiments of the present invention will be described with reference to the drawings.

FIG. 1 is a configuration diagram of an electron beam exposure apparatus according to an embodiment of the present invention, and FIG. 2 is a partially cutaway perspective view of the electron emission device 1 in FIG.

As shown in FIGS. 1 and 2, the electron beam exposure apparatus has a leading electrode 21 having a plate shape and a plurality of openings 27 formed vertically and horizontally on one main surface of the leading electrode 21. Electron emission device 1 having a large number of electron emission devices 24 exposing the electron emission device 24, and an arbitrary electron emission device 24, and a voltage is applied between the extraction electrode 21 and the electron emission device 24 to independently select the electron emission device 24. An application power supply 3 and an application control unit 2 which are control power supplies for emitting more electrons, an acceleration electrode 4 for accelerating the emitted electrons, and a high voltage power supply 5 for applying a high potential between the acceleration electrode 4 and the electron emission device. A blanking electrode 6 for deflecting the electron beam and removing the electron beam from the trajectory; a reducing lens 7 for converging the accelerated electron beam; A projection lens 8 for imaging the sample 11 on the stage 10 by reducing the magnification changing the imaging position of the electron beam spot is composed of a deflecting means rendering position deflection electrodes 9.

As shown in FIG. 2, the electron-emitting device 1 has openings 2 formed in the plane of a plate-like extraction electrode 21 vertically and horizontally.
7 is provided with a large number of electron-emitting devices 24 buried in an insulating film 29 with its tip exposed. This electron-emitting device 2
To provide an electric field between the 4 and the extraction electrode 22, electron-emitting devices 24 are wiring 28a, 2 8 b, 28c, 28d
.. And via the contacts 25a, 25b,..., Are connected to the planar electron-emitting-element lower pad 30 of the electrode wiring structure 22 having an angle with respect to the surface of the extraction electrode 21. Reference numeral 30 is connected to the application control unit 2 of FIG. 1 by a wire cable (not shown). Then, the position coordinates at which a voltage is to be applied to the electron-emitting devices 24 stored in the application control unit 2 are read out, and based on the timing signal from the timing adjustment unit, the applied power supply 3 of FIG. Apply voltage. The applied electron-emitting device 24 emits electrons by an electric field. FIG. 1 shows an example in which the acceleration electrode 4 is provided so as to surround the entire electron-emitting device 1. However, the present invention is not limited to this. An accelerating electrode 4 may be provided. In that case, the accelerating electrode 4 may be provided with openings corresponding to the positions of the electron-emitting devices 24 so that electrons from the electron-emitting devices 24 can pass through. Further, it is advantageous to provide a plate-shaped focusing electrode as a focusing means in parallel with the extraction electrode 21 so that the electrons emitted from the electron emitting element 24 are sufficiently focused.

In this embodiment, the size of the opening 27 is set to 0.5 μm in diameter to obtain higher resolution.
They were arranged vertically and horizontally at a pitch of 0 μm. The reduction ratio of the projected image was set to 1/20 so that the projected image of one electron-emitting device 24 could be transferred as a spot image having a diameter of 0.025 μm. Further, this electron-emitting device 24 is
× 100 grid, 2.5 μm × 2.5 on sample 11 irrespective of pattern shape or arrangement
A region having a size of μm can be processed by one electron irradiation. In an experiment, the voltage applied to the extraction electrode 21 for the electron-emitting device 24 was set to 10.6 V, and the acceleration voltage applied to the acceleration electrode 4 for the electron-emitting device 24 was set to 30 KV.
When a resist having a sensitivity of 10 μC / cm ² applied to the sample surface 11 was irradiated with electrons emitted from the electron-emitting device 24, a voltage application time at each irradiation spot, that is, an exposure time of 0.5 μsec, showed a good pattern. Could be transcribed.

The applied power source 3 includes a plurality of electron-emitting devices 2.
It is desirable to provide the same number as the electron-emitting devices 24 so that 4 can be applied at an appropriate timing. In addition, the delay due to the wiring length and switching is eliminated, and the electron emission element 24
In order to eliminate the variation in the amount of emitted electrons due to the variation in the characteristics, the applied voltage of each applied power source 3 is adjusted in units of 0.001V. Thereby, each electron-emitting device 24
The variation in the amount of emitted electrons is kept within 1% or less, and the transfer unevenness of the pattern is eliminated.

Here, as described above, the electron-emitting device 1 emitted electrons at an applied voltage of 10.6 V and accelerated at an accelerating voltage of 30 KV to make the resist on the sample 11 sensitive. Further, it can be used with various applied voltages and acceleration voltages, and can make a resist having various photosensitive characteristics sensitive. In this embodiment,
The applied power source 3 can be set to several tens of volts below the allowable voltage value, and the high voltage power source 5 can be varied from 10 KV to 50 KV.

The electron emission device 1 shown in FIG. 2 can be manufactured by using a normal semiconductor circuit manufacturing process. 3 (a) to 3 (c) and FIG. 4 show the manufacturing process of the electron emission device 1.
A description will be given based on the process chart of FIG.

As shown in FIG. 3A, the silicon substrate 3
An insulating layer 26 of silicon oxide is formed on the substrate 1 by thermal oxidation or CVD to a thickness of about 1.5 μm, and a 0.3 μm thick molybdenum film is formed thereon by sputtering. The molybdenum film in an unnecessary area is removed by a dry etching
d and pads 23d are formed. At this time, the wiring 28
The period of d is 1.0 μm. Next, as shown in FIG. 3B, a silicon oxide film having a thickness of 1.0 μm is formed by a CVD method so as to cover the wiring 28d and the pad 23d, and is formed on the end of the wiring 28d and the position of the pad 23. In addition, an opening is formed by photolithography and dry etching, a molybdenum film having a thickness of 0.3 μm is formed on the entire surface by sputtering, and the surface is flattened by chemical polishing to contact only the opening. To form Next, as shown in FIG. 3C, a 0.3 μm-thick molybdenum film is formed by a sputtering method in the same manner as in the case shown in FIG. 3A, and is unnecessary by a photolithography technique and a dry etching technique. By removing the molybdenum film in an appropriate region, the wiring 28c and the pad 23c are formed. At this time, the positions of the wiring 28c and the pad 23c are shifted by one cycle from the positions of the wiring 28d and the pad 23d where the contact 25 is formed.
The contact 25 is not formed below the end of the pad 23c, and the contact 25 is arranged only below the pad 23c. After that, the formation of the insulating layer, the formation of the contact, the formation of the wiring and the pad are repeated to form a laminated structure as shown in FIG. At this time, the mask patterns used in the photolithography process for forming the wiring of each layer and the pads 23 are all the same, and the alignment is shifted by only one cycle. Also, contact 2 of each layer
5, the mask patterns used in the photolithography process are all the same, and the alignment is 1
It is only shifted by the period. Therefore, the cost of the mask manufacturing method is constant even if the number of layers increases, and is economical.

Next, as shown in FIGS. 4 (a) and 4 (b), cutting is performed at the positions of the straight lines AA 'and BB' so as to include the necessary area, and the cut surface of AA 'is cut. After being polished and sufficiently flattened and normalized, a molybdenum film having a thickness of 0.3 μm is formed by a sputtering method, and unnecessary portions of the molybdenum film are removed by a photolithography technique and a dry etching technique. To form At this time, if the AA 'plane is perpendicular to the surface of the silicon substrate used in FIGS. 3A and 3B, the period of the wiring 28 exposed on the AA' plane connects AA '. 1.0μm in either direction to the direction and therewith Cartesian
It has become. An electron-emitting-element lower pad 30 is arranged in accordance with the position of the wiring 28, and a 0.5-μm-thick silicon oxide film, which corresponds to the insulating film 29, is formed on the entire surface. Next, a 0.35 μm-thick tungsten film corresponding to the extraction electrode 21 is formed on the entire surface of the silicon oxide film, and the tungsten film and the silicon oxide film are selectively etched and removed by a lithography technique. 0.5 in the area
An opening 27 of μm is formed, and the lower pad 30 of the electron-emitting device is formed.
To be exposed. Then, an aluminum film having a thickness of 0.15 μm is further formed on the opening 27 and the entire surrounding area, and a molybdenum film having a thickness of 0.8 μm is further formed thereon by a metal vapor deposition method. As the deposition progresses, the opening area of the opening gradually decreases as the deposition progresses, and the tip formed by deposition becomes a cone, and the tip with the optimal shape as a cathode has a sharp electron emission. An element 24 is obtained. Next, when the aluminum film is removed by wet etching, all of the molybdenum film deposited other than the electron-emitting devices 24 is removed by lift-off. Then, a thin metal wire is connected to the pad 23 formed on the side surface of the electrode wiring structure 22 by a wire bonding apparatus, pulled out as a connection cable, and connected to the application control unit 2 in FIG.

FIG. 5 is a diagram showing a pattern to be transferred to the sample 11, and FIG. 6 is a diagram showing a positional relationship between the arrangement of the electron-emitting devices 24 of the electron-emitting device 1 and the drawing pattern. A case where the pattern shown in FIG. 8 is transferred to the sample 11 by this electron beam exposure apparatus will be described. First, referring to FIG.
The pattern in the area A1 above the plane of the paper above the line C 'is a pattern formed by joining the patterns indicated by D.
Therefore, as shown in FIG. 6, the number and the coordinate values of the electron-emitting devices 24 to which the voltage of the electron-emitting device 1 is to be applied are stored in advance in a program so that the pattern indicated by D can be drawn by one transfer, and the black dots are used. A voltage is applied to the electron-emitting device 24 at the position shown to transfer the pattern D. The pattern of the area A1 is formed by repeatedly transferring the D pattern while changing the transfer position by the drawing position deflection electrode 9.

Next, the stage 10 is moved to position the sample 11 in a region where the region A2 can be drawn, and the region A2 is divided into regions within a range that can be transferred at one time. A program for the number and coordinate values of the electron-emitting devices 24 created in accordance with the above is called, and the drawing position is changed by operating the drawing position deflection electrode 9 or moving the stage 10 to transfer individual patterns.
The pattern of the area A2 is completed.

As described above, a power source to be applied to 100 × 100, ie, 10,000 electron-emitting devices 24 is provided, the pattern data is divided into squares each having a side of 2.5 μm, and the data in each square is reduced to 0.1 μm. Exposure of a square area of 2.5 μm on a side with the same exposure time regardless of the type of pattern and the presence or absence of a repetitive pattern by programming whether or not a pattern exists in a small unit area divided into 025 μm units Was completed.

In the above description of the embodiment,
In the manufacture of the electrode wiring structure 22, a method of sequentially forming each layer has been described. However, the present invention is not limited to this method. For example, two layers or four layers may be formed.
A similar structure can be obtained by laminating them together and polishing and removing excess substrate portions.

Further, in the above embodiment, the example in which the electrode wiring structure 22 is manufactured by using a normal semiconductor circuit manufacturing process has been described. However, the present invention is not limited to this. A manufacturing process similar to that of a glass ceramic laminated substrate for mounting a large number of integrated circuit chips constituting a processing apparatus may be used. In that case, a mixture of lead borosilicate crystallized glass and alumina, or a mixture of borosilicate glass, quartz glass, and cordierite glass is used as the material of the insulating layer, and the material of the wiring, contact, and pad is , Besides refractory metals such as molybdenum and tungsten,
Metals such as copper, gold, and silver can be used. When such a glass-ceramic laminated substrate is used, the glass-ceramic powder is slurried and then formed into a tape shape, thereby obtaining a flat green sheet. After the green sheet is cut into a predetermined size, contacts for making electrical connection between layers are formed, and a wiring pattern and a pad pattern are printed on the green sheet by a screen printing method. As a conductive paste for the wiring pattern and the pad pattern, a metal paste such as gold, silver, and palladium is used. Thereafter, a large number of green sheets are laminated and pressed and sintered to be used as an electrode wiring structure.

When a green sheet is used, a large number of sheets can be easily laminated and pressure-bonded at once, so that the number of laminating steps is smaller than that in a case where a semiconductor circuit manufacturing step is used. The feature is that the required period is short. In addition, the cost of materials and devices is lower than in the case of using a semiconductor circuit manufacturing process, and this is also advantageous. On the other hand, it is inferior to the case of using a semiconductor circuit manufacturing process in terms of forming a fine pattern, and it is sufficient to use both in consideration of these two points.

[0034]

As described above, according to the present invention, an electron emission device in which a large number of extremely small electron emission ports are arranged in a matrix at a fine pitch and an electron emission element in the electron emission device are arbitrarily selected. By providing a control power supply that independently applies an electron excitation voltage, the position coordinates of the electron emission element to which the electron excitation voltage is to be applied can be programmed in advance to operate the electron emission device, and therefore, the pattern to be drawn No matter what kind of pattern is included in the pattern, or the same exposure time can be used to expose a region of a certain area regardless of the presence or absence of a repeated pattern, and as a result, the pattern to be drawn can be exposed in a short time. In addition to the above, because the vertical wiring directly under each electron-emitting device has the same simple structure,
There is an effect that the yield in the manufacturing stage is increased, and as a result, the price of the device is lower than in the past. Further, since the patterns of the respective layers of the multilayer structure for connecting the fine wiring are the same, there is no need for a mask including a separate pattern, and as a result, there is also an effect that the device price is also reduced.

[Brief description of the drawings]

FIG. 1 is a configuration diagram of an electron beam exposure apparatus according to an embodiment of the present invention.

FIG. 2 is a partially cutaway perspective view of the electron emission device 1 in FIG.

FIG. 3 is a diagram illustrating a manufacturing process of the electron-emitting device 1.

FIG. 4 is a diagram showing a manufacturing process of the electron-emitting device 1.

FIG. 5 is a diagram showing a pattern to be transferred to a sample.

FIG. 6 is a diagram showing a positional relationship between an array of electron-emitting devices of the electron-emitting device 1 and a drawing pattern.

FIG. 7 is a diagram showing a configuration of an exposure apparatus using a blanking aperture array (BAA).

FIG. 8 is a schematic plan view showing a configuration of a blanking aperture array (BAA).

FIG. 9 is a partially cutaway perspective view showing an example of an electron emission device in which electron emission elements are arranged in a grid as an electron emission source.

[Explanation of symbols]

 REFERENCE SIGNS LIST 1 electron emission device 2 application control unit 3 applied power supply 4 acceleration electrode 5 high-voltage power supply 6 blanking electrode 7 reduction lens 8 projection lens 9 drawing position deflection electrode 10 stage 11 sample 21 extraction electrode 22 electrode wiring structure 23 pad 24 electron emission element 25a, 25b Contact 26 Insulating layer 27 Opening 28a, 28b, 28c, 28d Wiring 29 Insulating film 30 Pad directly under electron-emitting device 31 Silicon substrate

──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. ⁷ identification code FI H01J 37/147 H01J 37/147 C H01L 21/027 H01L 21/30 541B (58) Fields surveyed (Int. Cl. ⁷ , DB Name) H01J 37/305 G03F 7/20 504 G03F 7/20 521 H01J 9/02 H01J 37/063 H01J 37/147 H01L 21/027

Claims (8)

(57) [Claims] 1. A plate-like extraction electrode, a plurality of electron-emitting devices exposing their respective tips to a large number of openings formed vertically and horizontally on one main surface of the extraction electrode, and said one of said extraction electrodes are laminated and arranged on each plane of a plurality of insulating layers intersecting the plane, includes a pad, and a control electrode wiring structure for controlling the operation of the electron-emitting device, the insulating layer
The end surface facing the one main surface is a cut surface,
An electron emission device wherein the extraction electrode is formed on the cut surface . 2. A plate-like extraction electrode, a plurality of electron-emitting devices exposing their respective tips to a large number of openings formed vertically and horizontally on one main surface of the extraction electrode, and the one main surface of the extraction electrode are laminated and arranged on each plane of a plurality of insulating layers that intersect with, include pads, a control electrode wiring structure for controlling the operation of the electron-emitting device, the insulating layer
The end surface facing the one main surface is a cut surface,
The extraction electrode selects an electron-emitting device formed on the cut surface and any of the electron-emitting devices, applies a voltage between the extraction electrode and the electron-emitting device, and independently applies the voltage to the electron-emitting device. An electron having a control power supply for emitting more electrons, an accelerating electrode for accelerating the emitted electrons, a converging means for converging the accelerated electrons, and a deflecting means for deflecting the converged electrons. Line exposure equipment. 3. The accelerating electrode is a plate-shaped conductive member disposed in parallel with the extraction electrode, and a hole through which the electron beam passes is formed facing the opening of the extraction electrode. Item 3. An electron beam exposure apparatus according to Item 2. Wherein said converging means is the extraction electrode and the electron beam exposure apparatus of parallel disposed a plate-like conductive member der Ru claim 2 or 3 wherein. Wherein said control power supply includes a application power of the same number as that of the electron-emitting devices of claims 2 having means for applying any voltages to select the corresponding electron-emitting devices of these applying source 4 The electron beam exposure apparatus according to claim 1. 6. A plate-like extraction electrode, a plurality of electron-emitting devices exposing their respective tips to a large number of openings formed vertically and horizontally on one main surface of the extraction electrode, and said one of said extraction electrodes are laminated and arranged on each plane of a plurality of insulating layers intersecting the plane, includes a pad, and a control electrode wiring structure for controlling the operation of the electron-emitting device, the insulating layer
The end surface facing the one main surface is a cut surface,
The out come electrodes A manufacturing method of the cutting surface electron emission device is formed on, and forming a wiring pattern and an electrode pad pattern on a flat surface of the insulating layer, a further insulating layer thereon A step of forming, and a step of embedding a columnar contact in an insulating layer so as to connect to a connection pad portion and an electrode pad at an end of an already formed lower wiring pattern, and these steps were repeated at least once. after a step of forming the uppermost wiring pattern and the electrode pad pattern, over the structure body formed by the steps by cutting at an angle with respect to said flat surface section of the wiring pattern periodically arranged And a step of periodically forming an electron-emitting device on the cut surface. 7. The method according to claim 6 , wherein a silicon oxide film or a silicon nitride film on a silicon substrate is used as the insulating layer. 8. The method according to claim 6, wherein a glass ceramic is used as the insulating layer.