JP3489644B2 - Charged particle beam exposure method and apparatus - Google Patents

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention forms a multi-beam by passing a charged particle beam through a blanking aperture array (BAA) chip and according to bitmap data.
By applying a voltage to a small blanking electrode arranged in the vicinity of each aperture to control the on / off of each of the multi-beams on the exposure target, the resist is coated with a pattern according to the bitmap data. BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a charged particle beam exposure method and apparatus for performing exposure on an exposed object such as a semiconductor wafer or mask attached.

[0002]

2. Description of the Related Art With the miniaturization of semiconductor integrated circuit devices, it is expected that the charged particle beam exposure apparatus will be applied to mass-produced products. Electrons are generally used as the charged particles.
According to this device, fine processing of 0.05 μm or less
It is possible to perform the alignment with an accuracy of 0.02 μm or less. However, since the charged particle beam is scanned and exposed on the object to be exposed, the exposure processing time becomes longer than the optical exposure.

Therefore, a charged particle beam is formed into a multi-beam by a BAA chip, and a part of the beam is selectively projected onto an object to be exposed to expose a fine pattern, and the moving stage is continuously moved at 100 mm / s, for example. An exposure apparatus has been proposed in which multiple beams are deflected by a main deflector and a sub-deflector while moving, and high-speed exposure is performed (for example, JP-A-53-117387 and US Pat. No. 4,153,843).
Issue). Even if this apparatus is used, the charged particle beam is scanned, so that the exposure time becomes longer than the optical exposure, and it is necessary to improve the throughput of the charged particle beam exposure apparatus.

For example, there are 1024 pairs of blanking electrodes on the BAA chip, and one of each pair is commonly connected and 0 V is applied. Therefore, at least a lead wire for externally applying a voltage to the electrodes is provided. You will need 1025 pieces.
Conventionally, like an LSI, a BAA chip is adhered to a package, a pad on the BAA chip and a pad on the package are wire-bonded, and the package is
Insert it into a socket fixed to the printed wiring board, connect the flexible wiring to the terminal on the upper periphery of the board, place the board inside the lens barrel, take the flexible wiring out of the lens barrel, and connect it to the output terminal of the driver. (Japanese Patent Laid-Open No. 7-2
54540).

However, when replacing the consumable BAA chip, 1000 or more wire bonds are required. Further, since the wiring from the output terminal of the driver to the electrode on the BAA chip is as long as 300 mm or more, the waveform of the voltage pulse applied to the electrode becomes dull, the data transfer speed is limited, and the exposure throughput is reduced. Since the current target value of the data transfer rate is 400 MHz, it is extremely important to remove the dullness of the waveform of the voltage pulse applied to the electrode in order to improve the exposure throughput.

In order to facilitate the replacement of the BAA chip, a structure is used in which about 1000 L-shaped probes are brought into contact with the pads on the BAA chip (Japanese Patent Laid-Open No. 7-79).
No. 254540). In order to ensure ohmic contact between the pads on the BAA chip and the probes, a pressing force of 10 g is required for each probe, and the pressing force of all the probes is about 10 Kg. About 10 on the BAA chip
In order to press the probe into 00 fine pads, the pads should be arranged in 4 rows, and accordingly, the probes should be divided into 4 stages in the optical axis direction by using 4 types of L-shaped probes at bending positions. And the structure becomes weaker. Further, similarly to the above, the wiring becomes long, the data transfer rate is limited, and the exposure throughput is reduced.

[0007]

SUMMARY OF THE INVENTION In view of the above problems, a first object of the present invention is to provide a charged particle beam exposure apparatus in which the BAA chip can be easily replaced and the structure is robust. A second object of the present invention is to provide a charged particle beam exposure method and apparatus capable of improving the exposure throughput.

[0008]

In the first aspect of the invention, an aperture array is formed on a semiconductor chip,
A blanking aperture array (BAA) chip having a pair of blanking electrodes formed on each aperture, and a lead pattern extending from the blanking electrodes to the peripheral portion of the aperture array forming surface, and a charged particle beam on the BAA chip. Is disposed between the BAA chip and the object to be exposed, and an opening is formed through which a beam of the multi-beam that is not deflected by the blanking electrode passes. A diaphragm for blocking the beam deflected by the blanking electrode,
By applying a voltage to the blanking electrode according to the bit map data to control the on / off of each of the multi-beams on the object to be exposed, a pattern corresponding to the bit map data is formed on the object to be exposed. In the charged particle beam exposure apparatus having a multi-beam control device for exposing the substrate, the outer peripheral portion of the BAA chip and the peripheral portion of the aperture array forming surface are held, and a first terminal is provided on the surface of the holder on the aperture array forming surface side. An array is formed, the first terminal array is electrically connected to the lead pattern of the BAA chip through a wiring pattern, and the second terminal corresponding to the first terminal array is provided on the surface facing the first terminal array. A terminal array is formed, a notch corresponding to the aperture array is formed in the central portion, and a wiring pattern extending from the second terminal array toward the outer end portion The formed wiring board, the supporter for fixing the wiring board to the lens barrel in the lens barrel, and the holder are held, and the holder is moved in the optical axis direction to move the first terminal array to the second terminal. A Z stage pressed against the array, wherein one of the first terminal array and the second terminal array is
The tip is narrower than the bottom surface, and the charged particle beam emitting device, the BAA chip, the holder, the Z stage, the optical axis side portion of the wiring board, and the diaphragm are evacuated when used. A voltage is applied to the blanking electrode on the BAA chip via the wiring pattern of the wiring board.

According to the first aspect of the present invention, the holder holding the BAA chip is pressed against the wiring board by the Z stage, whereby the first terminal array formed on the holder is fixed to the lens barrel via the supporter. The structure is sturdy because it contacts the second terminal array on the wiring board, and the BAA chip can be removed from the holder by releasing this pressing on the Z stage, which makes it easy to replace the BAA chip. Has the effect of being.

In a first aspect of the first invention, the lens barrel has a first portion on the charged particle beam emitting device side and a second portion on the opposite side to the charged particle beam emitting device, and the supporter is A first member which is in close contact with the first surface of the wiring board on the inside of the lens barrel and on the charged particle beam emission device side, and the outer end of which is airtightly continuous with the first portion of the lens barrel; A second member which is in close contact with a second surface of the wiring board, which is inside the lens barrel and opposite to the first surface, and whose outer end is airtightly continuous with the second portion of the lens barrel; A first seal member and a second seal member that seal between the first member and the wiring board and between the second member and the wiring board, respectively, and an outer end portion of the wiring board is It communicates with the outside of the lens barrel.

According to the first aspect, since the wiring length between the blanking electrode of the BAA chip and the outside of the lens barrel can be made shorter than the radius of the lens barrel, the wiring capacitance is reduced and the voltage of higher frequency is blocked. It is possible to apply the voltage to the ranking electrodes, which brings about an effect of improving the throughput of exposure. Further, it is possible to arrange the driver connected to the wiring pattern of the wiring board outside the lens barrel and inside the lens barrel radius.

In a second aspect of the first invention, a terminating resistor arranged on the wiring board and connected to the wiring of the wiring board, and connected to the wiring located at the outer end portion of the wiring board. It has a coaxial cable and a cooling device which cools the 1st member or the 2nd member.

According to the second aspect, since the terminating resistor is arranged on the wiring board and the coaxial cable is connected to the wiring pattern of the wiring board, the driver for driving the blanking electrode is located at a position distant from the BAA chip. Can be arranged, and maintenance of the driver becomes easy. Further, since the impedance matching is close to the blanking electrode of the BAA chip, it becomes possible to apply a voltage of a higher frequency to the blanking electrode, and the exposure throughput is further improved.

In a third aspect of the first invention, one end is attached to an outer peripheral portion of the wiring board, and the connector has an electrical connection between the wiring of the wiring board and the coaxial cable. According to the third aspect, it is possible to easily connect and maintain the coaxial cable.

In a fourth aspect of the first aspect of the invention, a driver disposed on a portion of the wiring board communicating with the outside of the lens barrel and connected to the wiring of the wiring board, the first member or the first member. A cooling device for cooling the two members.

According to the fourth aspect, the calorific value can be significantly reduced as compared with the second aspect, so that the temperature variation of the wiring board can be further reduced and the variation of the beam irradiation point on the exposure object due to the variation of the thermal expansion. The effect of being able to reduce more. In the fifth aspect of the first invention, a heater for heating the wiring board according to the supplied power and a heater for heating the wiring board according to the number σ of multi-beams passing through the aperture of the diaphragm to reduce the temperature fluctuation of the wiring board are provided. And a heater control device that supplies the generated electric power to the heater.

According to the fifth aspect, since the sum of the heat generated by the terminating resistor or driver and the heat generated by the heater is substantially constant, the fluctuation of the beam irradiation point on the exposure object due to the fluctuation of thermal expansion is reduced. Has the effect. In a sixth aspect of the first aspect of the invention, the heater control device is configured so that the electric power (aσ +
b) is supplied to the heater, where a and b are settable constants.

According to the sixth aspect, the primary correction is performed so that the above-mentioned sum becomes more constant, so that the variation of the beam irradiation point on the exposure object due to the variation of the thermal expansion is further reduced. Play. In the seventh aspect of the first invention, the above BA
The multi-beam control device is provided between the A chip and the diaphragm, and has a blanking deflector that deflects the entire multi-beam during standby and blocks the multi-beam by the diaphragm. A deflection voltage is applied simultaneously to almost all the half of the blanking electrode pairs of the chip.

According to the seventh aspect, the heat generated by the terminating resistor or the driver during standby is about half of the maximum value. Therefore, the maximum fluctuation range of heat generation is about half that in the case where the value is zero. The effect that the fluctuation of the beam irradiation point on the exposure target due to the fluctuation of the thermal expansion is further reduced. First
In an eighth aspect of the invention, the multi-beam control device is configured such that, in the standby state, substantially half of all the blanking electrode pairs of the BAA chip do not overlap with each other in the first group and the second group.
A deflection voltage is alternately applied to the groups.

According to the eighth aspect, since the temperature distribution of the wiring board is made more uniform, the variation of the beam irradiation point on the object to be exposed due to the variation of thermal expansion is further reduced. In the charged particle beam exposure method of the second invention,
Using the apparatus of the third or fourth aspect, the heater is supplied with electric power according to the number σ of the multi-beams passing through the opening of the diaphragm, and the heater heats the wiring board.

In the first aspect of the second invention, the electric power (aσ +
b) is supplied to the heater, where a and b are settable constants so that the beam position does not change on the exposure object when the number σ is changed before actual exposure. Determine the constants a and b. Since the response speed of the temperature detection is slow due to the heat capacity of the temperature detector itself, if the constants a and b are determined in this way, the exposure target object will be more determined than when the constants a and b are determined so that the detected temperature becomes constant. It is possible to further reduce the fluctuation of the upper beam irradiation point.

In a second aspect of the second invention, the charged particle beam exposure apparatus is arranged between the BAA chip and the diaphragm, and a blanking device for deflecting the entire multi-beam while waiting and blocking the multi-beam by the diaphragm. A deflector is provided, and in the standby state, a deflection voltage is simultaneously applied to almost half of all the blanking electrode pairs of the BAA chip.

In the third aspect of the second aspect of the invention, during the standby state, the deflection voltage is alternately applied to the first group and the second group which do not overlap with each other in almost half of all the blanking electrode pairs of the BAA chip. Apply.

[0024]

BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described below with reference to the drawings. [First Embodiment] FIGS. 1 to 6 show a first embodiment of the present invention. The dashed-dotted lines in FIGS. 2, 3 (B), (C) and FIG. 4 indicate that the plane that passes through these dashed-dotted lines and is perpendicular to the plane of the drawing is a plane of symmetry. 2 and 4, for simplification, the same reference numerals are given to a plurality of elements having the same configuration. FIG. 1 shows a schematic configuration of a charged particle beam exposure apparatus.

This apparatus comprises an exposure section EP and a control section. In the exposure unit EP, the charged particle beam EB0 from the charged particle beam emission device 13 is BAA in the lens barrel 11.
It is projected on the chip 30 and shaped into a multi-beam. B
As shown in FIGS. 3A and 3D, the AA chip 30 is
Apertures 33 are two-dimensionally arranged in the aperture array region 32, a wiring pattern is formed, an oxide film is formed thereon, and a pair of blanking electrodes 36 and 37 are formed in each aperture 33. There is. The blanking electrodes 36 and 37 are formed by forming a contact hole in the oxide film, then plating the surface with gold, and leaving the electrode portion by a lithography technique. One of the blanking electrode pairs 37 is commonly connected to the ground wiring pattern GND on the BAA chip 30. For example, 128 × 8 = 1024 apertures 33 are formed. An array of pads 38 is formed around the blanking electrode formation surface of the BAA chip 30, and a space between the pads 38 and the blanking electrodes is formed by a lead pattern 39 (FIG. 3D) on the BAA chip 30. It is connected. Therefore, the binary voltage applied to the pad 38, that is,
Applied voltage Vb or 0V between the blanking electrodes 36 and 37
Depending on, the charged particle beam is deflected or undeflected.

In FIG. 1, a multi-beam formed by the BAA chip 30 is a charged particle beam (off-beam) EB deflected by a blanking electrode pair of the BAA chip 30.
1 and undeflected charged particle beam (on-beam) EB
The off-beam EB1 is blocked by the diaphragm 18, the on-beam EB2 passes through the aperture 181 of the diaphragm 18, and the semiconductor wafer 1 mounted on the moving stage 12 is divided into two parts.
0 is projected. The resist film on the semiconductor wafer 10 is exposed with a pattern corresponding to the blanking electrode pair applied voltage pattern of the BAA chip 30. On-beam E
The B2 dot pattern is scanned on the semiconductor wafer 10 by the moving stage 12, the main deflector 20, and the sub deflector 22.

Although not shown in FIG. 1, the charged particle beam EB0 is collimated at the position of the BAA chip 30 by a plurality of electromagnetic lenses arranged along the optical axis, and the aperture 181 is formed.
The on-beam EB2 is converged at the position on the semiconductor wafer 10. The charged particle beam EB0 is continuously emitted, and the BAA chip 30 and the diaphragm 1 are provided before the start of scanning or during the waiting time between the end point and the start point of repeated scanning.
By the blanking deflector 15 arranged between 8 and
The entire multi-beam is deflected and blocked by the diaphragm 18.

The multi-beam control device of the control unit comprises a bit map data storage device 51, a data transfer device 48,
And a driver 45. The bitmap data storage device 51 is, for example, a magnetic disk device, and stores data obtained by expanding designed pattern data into a bitmap in advance. The data transfer device 48 is provided with a plurality of sets of buffer memories, and while writing the data read from the bit map data storage device 51 into one set of buffer memories, another set of buffer memories is synchronized with the clock φ. High-speed transfer is performed to the driver 45 in the scanning order.
The driver 45 has a power MOS transistor switch circuit, for example, a power CMOS circuit for each blanking electrode pair of the BAA chip 30, and amplifies the driving capability to supply these blanking electrodes.

Since the on-beam EB2 repels each other due to the Coulomb force between the beams, the focal point shifts below the surface of the semiconductor wafer 10 and the image is blurred. In order to prevent this blur, a refocusing coil 17 is arranged below the diaphragm 18 coaxially with the optical axis, and a current proportional to the number of the on-beams EB2 is supplied to the refocusing coil 17 to refocus between the on-beams EB2. The magnetic fields of the coils 17 bring them closer together. The number of on-beams EB2 is generated as refocus data based on the bitmap data when the bitmap data is generated, and is stored in the refocus data storage device 52.

The refocusing coil controller of the controller is
This refocus data storage device 52, a data transfer device 53, a D / A converter 54, and a current amplifier 55 are provided. The refocus data storage device 52 is, for example, a magnetic disk device, and refocus data is stored in advance. Similar to the data transfer device 48, the data transfer device 53 supplies data from the refocus data storage device 52 to the D / A converter 54 in synchronization with the read clock φ. The current analogized by the D / A converter 54 is amplified by the current amplifier 55 and supplied to the refocusing coil 17.

Output terminal of driver 45 and BAA chip 3
The space between the blanking electrode of 0 and the holder 6 shown in FIG.
0, the multilayer wiring board 80, the connector 81, and the coaxial cable 82. The BAA chip 30 has its outer peripheral surface and the peripheral portion of the blanking electrode formation surface held by a holder 60. In the holder 60, a multilayer wiring board 62 is joined to a frame 61. Since the BAA chip 30 is heated by projecting the charged particle beam onto the aperture array region 32, the holder 60 preferably has good heat resistance and heat dissipation, and for example, alumina ceramic or alumina nitride ceramic is used. An array of pads 63 corresponding to the array of pads 38 of the BAA chip 30 is formed on one surface of the multilayer wiring board 62, and four rows are formed on the surface opposite to this surface as shown in FIG. 3C. A grid array of balls 64 is formed. Pad 3
8 and the ball 64 are connected by a wiring pattern 65 formed in the multilayer wiring board 62. An opening 66 is formed in the central portion of the multilayer wiring board 62 so as to correspond to the aperture array region 32.

As shown in FIG. 2, the holder 60 is held by the Z stage 70. The Z stage 70 is driven with respect to the XY stage 72 via the feed screw 71 in the direction Z shown by the arrow parallel to the optical axis. The opening 73 is for passing the charged particle beam EB0. In FIG. 2, the drive units of the Z stage 70 and the XY stage 72, and the mounting structure of the XY stage 72 are not shown.

A grid array of pads 801 corresponding to the grid array of the balls 64 is formed on the surface of the inner end portion of the multilayer wiring board 80 facing the multilayer wiring board 62. As shown in FIG. 4, a connector 81 is fixed to the outer end portion of the multilayer wiring board 80. The connector 81 is
For example, it has 64 pins × 16 pieces. The pins of the connector 81 and the pads 801 are connected by a wiring pattern 802 in the multilayer wiring board 80. At least one of the pads 801 is for ground potential, and the pad and the pin of the connector 81 are connected by a ground wiring pattern 803 in the multilayer wiring board 80. In the multilayer wiring board 80, a terminating resistor 804 is arranged corresponding to each wiring pattern 802, and the terminating resistor 804 is connected between the wiring pattern 802 and the ground wiring pattern 803. The terminating resistor 804 may be a pattern resistor, a sheet resistor, a chip component or an individual resistor. In the case of other than the pattern resistor, a recess may be formed in the multilayer wiring board 80 and the resistor may be arranged in this recess. Connector 81
The coaxial cables 8 arranged in four stages in the optical axis direction
An inner conductor at one end of the second conductor 2 and an outer conductor commonly connected to each other are connected. This outer conductor is the connector 8
It is connected to the ground wiring pattern 803 via the first pin. The other end of the coaxial cable 82 is connected to the driver 45 shown in FIG.

By lowering the Z stage 70 and pressing the ball 64 against the pad 801, the voltage from the driver 45 is applied to the blanking electrode of the BAA chip 30. Such a pressing structure is sturdy and can withstand long-term use. Further, the BAA chip 30 may be fitted into the holder 60 and adhered thereto, and the holder 60 may be held on the Z stage 70. Therefore, the BAA chip 30, which is a consumable item, can be easily replaced.

A terminating resistor 804 is arranged in the multilayer wiring board 80, and a wiring pattern 802 in the multilayer wiring board 80.
1 is connected to the coaxial cable 82 via the connector 81, the driver 45 of FIG. 1 can be arranged at a position away from the BAA chip 30, and maintenance of the driver 45 becomes easy. The blanking voltage Vb applied to the blanking electrode of the BAA chip 30 is, for example, 1
Since it is 0 V and is applied to the termination resistor 804 of 50Ω, the power consumption of the termination resistor 804 is 2 W. Since there are about 1000 termination resistors 804 in the multilayer wiring board 80, the total power consumption of the termination resistors 804 reaches a maximum value of about 2 kW when all the multi-beams are deflected. Therefore, the multilayer wiring board 80 preferably has good heat resistance and heat dissipation, and for example, the above-mentioned alumina ceramic or alumina nitride ceramic is used. The layers of the multilayer wiring board 80 are joined by an adhesive layer having a good sealing property, for example, a glass fusing layer.

The terminating resistance total power W changes as shown in FIG. 5A according to the bit map data. If the temperature of the multilayer wiring board 80 fluctuates as a result, the beam irradiation point on the semiconductor wafer 10 fluctuates due to fluctuations in the thermal expansion of the members, and this must be kept constant. Therefore, a heater 83, for example, a sheet resistor is fitted in the recess formed in the multilayer wiring board 80, and electric power is supplied to the heater 83 so that the temperature of the multilayer wiring board 80 becomes constant. FIG. 4 shows the arrangement of the heater 83, the terminating resistor 804, and the pad 801.

Assuming that the thermal conductivity of the multilayer wiring board 80 and elements in the vicinity thereof is infinite, the total power of the terminating resistor W
Heater 8 so that the sum of heater and heater total power * W becomes constant.
When power is supplied to 3, the temperature of the multilayer wiring board 80 becomes constant. The change in the total heater power * W is shown in FIG.
As shown in FIG. 1, the heater control device of the control unit includes a refocus data storage device 52, a data transfer device 53, an arithmetic circuit 56, a D / A converter 57, and a power amplifier 58. Since the refocus data storage device 52 and the data transfer device 53 are also used as the refocus coil control device, the arithmetic circuit 56 and the D / A converter 57 are simply used.
And the power amplifier 58 may be added. Since the thermal conductivity is not actually infinite, the temperature of the multilayer wiring board 80 varies even if W ++ W is kept constant. The arithmetic circuit 56 is used to correct this variation. The refocus data σ from the data transfer device 53 is calculated by the arithmetic circuit 5
6 is also supplied to a D / A converter 57. Power amplifier 58
Supplies electric power proportional to the output current of the D / A converter 57 to the heater 83.

A and b of the arithmetic circuit 56 are constants that can be set, and when the number of the on-beams EB2 is changed before exposure, the beam irradiation point position on the semiconductor wafer 10 due to the temperature change of the multilayer wiring board 80. Is determined so as to minimize the fluctuation. In FIG. 2, the multilayer wiring board 80 is sandwiched between the member 84 and the member 85. The members 84 and 85 are made of a good heat conductor such as copper. In order to maintain a vacuum inside the lens barrel, the seal rings S1 and S are provided between the multilayer wiring board 80 and the member 84 and between the multilayer wiring board 80 and the member 85, respectively, near the optical axis.
Sealed by 2. The lens barrel 11 of FIG. 1 has a lens barrel 111 and a lens barrel 112 that are separated from each other as shown in FIG. 2, and the lens barrel 111 is provided with a member 84 via a seal ring S3.
And the lens barrel 112 is airtightly continuous with the member 85 via the seal ring S4. With this structure, part of the multilayer wiring board 80, the connector 81, and the coaxial cable 82 can be arranged on the atmosphere side, and the connector 8
1 and the coaxial cable 82 can be easily connected and maintained, and the wiring length between the pad 801 and the connector 81 can be shortened.

A cooling pipe 86 is wound around the optical axis and is in contact with the member 85. The seal ring S4 is arranged closer to the optical axis than the pipe 86, so that the pipe 86 can be arranged on the atmosphere side, and the pipe 86 can be easily attached and maintained. By cooling water through the pipe 86 and cooling the multilayer wiring board 80 through the member 85, the temperature of the multilayer wiring board 80 is reduced to that shown in FIG.
As shown in.

In order to minimize the fluctuation of the beam irradiation point due to the temperature fluctuation, it is necessary to reduce the temperature fluctuation of the multilayer wiring board 80 and make the temperature distribution of the multilayer wiring board 80 uniform. The terminating resistor total power W itself cannot be changed. Therefore, the total power W of the terminating resistance in the above-mentioned standby state
However, as shown in FIG. 5A, the maximum fluctuation range of the termination resistance total power W is halved as compared with the case where the maximum value is set to 0. FIG. 6 (B) shows
An outline of a multi-beam trajectory in such a standby state is shown. Further, the blanking electrode pair of the BAA chip 30 is divided into a half first electrode group and a remaining half second electrode group, and as shown in FIG. 6A, a first electrode group and a second electrode group are formed. A blanking voltage Vb is alternately applied to the temperature distribution to make the temperature distribution of the multilayer wiring board 80 uniform. In order to make it more uniform, the first electrode group and the second electrode group are selected so that the distribution density of the corresponding termination resistors 804 is substantially constant in FIG.

The metal cylinder 87 in FIG. 2 is made of, for example, copper and is for preventing an electric field from being formed by charge-up. [Second Embodiment] FIG. 7 shows a refocus data utilizing unit according to a second embodiment of the present invention. In this form, the heater 8
3 is divided into two systems, a heater 53A and a heater 53B, and the heater control unit controls the operation circuit 5 for the heater 53A.
6A, D / A converter 57A and power amplifier 58A, operation circuit 56B for heater 53B, D / A converter 57
B and a power amplifier 58B. Arithmetic circuit 56
The constants a and b of A and 56B can be set independently of each other.

In the second embodiment, since there are two sets of parameters a and b for keeping the temperature of the multilayer wiring board 80 constant, the temperature variation of the multilayer wiring board 80 is reduced as compared with the case of the first embodiment. It becomes possible. [Third Embodiment] FIG. 3 shows a schematic sectional view of a third embodiment of the present invention, which corresponds to FIG.

In the first embodiment, the multilayer wiring board 80 is used.
Since the terminating resistor 804 is disposed inside, the maximum heat generation amount is as large as about 2 kW. On the other hand, according to the structure shown in FIG.
The wiring length in the multilayer wiring board 80 can be made shorter than the lens barrel radius, and a part of the multilayer wiring board 80 can be exposed to the atmosphere side. Therefore, in the second embodiment, the terminating resistor 804 is not arranged in the multilayer wiring board 80A, and the driver 45 is arranged in the atmosphere side portion of the multilayer wiring board 80A. Member 84A
Is shaped so that a space in which the driver 45 can be placed is formed on the multilayer wiring board 80A. As the driver 45, for example, 128 power CMOS inverters hybridized into one monolithic IC are used. The total power consumption of the driver 45 is about 100 W at the maximum, which is about 1/20 of the total power W of the terminating resistor in the first embodiment.

Also in this case, since the power consumption of the driver 45 varies according to the bitmap data, the heater 83 is fitted in the recess formed in the multilayer wiring board 80A.
In addition, the member 85A that is in close contact with the lower surface of the multilayer wiring board 80A
, The pipe 86 is wound, and the multilayer wiring board 80A is cooled via the member 85A. Seal ring S5
Is for making the space between the lens barrel 112A and the member 112B airtight. Other points are the same as those in the first embodiment.

According to the third embodiment, the amount of heat generation can be reduced more than in the first embodiment, so that the temperature variation of the multilayer wiring board 80A can be further reduced and the beam irradiation point variation can be further reduced. In addition, the present invention includes various modifications. For example, a single layer wiring board may be used instead of the above multilayer wiring board. A Peltier element may be used instead of the cooling pipe. In addition, the ball 64 and the pad 801
And may be reversed. Generally, the pad array may be a terminal array, and may be, for example, an array of the tip surfaces of the conductors filled in the contact holes. Further, the ball 64 is for ensuring contact, and the tip may be thinner than the bottom surface even if it is not a ball.

[Brief description of drawings]

FIG. 1 is a schematic configuration diagram of a charged particle beam exposure apparatus according to a first embodiment of the present invention.

2 is a schematic cross-sectional view of a portion of the device in FIG.

FIG. 3 is a diagram showing details of components in FIG.

FIG. 4 is a diagram showing a planar arrangement of the components in FIG.

5 is a diagram showing the operation of the configuration of FIG.

FIG. 6 is an explanatory diagram of an operation of a multi-beam during standby.

FIG. 7 is a block diagram showing a refocus data use unit according to the second embodiment of the present invention.

FIG. 8 is a schematic cross-sectional view of a third embodiment of the present invention, corresponding to FIG.

[Explanation of symbols]

EP exposure section 13 Charged particle beam emitter 15 Blanking deflector 18 aperture 30 BAA chips 33 Aperture 36, 37 Blanking electrode 38, 63 pads 39 lead pattern 45 driver 60 holder 61 frames 62, 80, 80A multilayer wiring board 64 balls 65,802 Wiring pattern 70 Z stage 72 XY stage 801 pad 803 Ground wiring pattern 804 terminating resistor 81 connector 82 coaxial cable 83 heater S1-S5 seal ring

─────────────────────────────────────────────────── ─── Continuation of front page (72) Inventor Akio Yamada 1015 Kamiodanaka, Nakahara-ku, Kawasaki City, Kanagawa Prefecture, Fujitsu Limited (72) Inventor, Hiroshi Yasuda 1015, Kamedotachu, Nakahara-ku, Kawasaki City, Kanagawa Prefecture, Fujitsu Limited ( 56) References JP-A-7-254540 (JP, A) JP-A-2-54855 (JP, A) JP-A-6-45239 (JP, A) JP-A-61-69125 (JP, A) (58) ) Fields surveyed (Int.Cl. ⁷ , DB name) H01L 21/027

Claims (13)

(57) [Claims] 1. A blanking aperture in which an aperture array is formed on a semiconductor chip, a pair of blanking electrodes is formed on each aperture, and a lead pattern extending from the blanking electrode to the peripheral portion of the aperture array forming surface is formed. An array chip, a charged particle beam radiation device for projecting a charged particle beam onto the blanking aperture array chip to form a multi-beam, and a blanking aperture array chip and an exposure object, and Among them, an aperture is formed through which the beam not deflected by the blanking electrode is formed, a diaphragm for blocking the beam deflected by the blanking electrode, and a voltage is applied to the blanking electrode according to the bit map data to make the multi By controlling the on / off of each of the beams on the exposed object And a multi-beam control device for exposing a pattern according to the bitmap data onto the exposure target, the outer peripheral portion of the blanking aperture array chip and the peripheral portion of the aperture array forming surface. And a holder in which a first terminal array is formed on the surface of the holder on the side of the aperture array forming surface, and the first terminal array is electrically connected to the lead pattern of the blanking aperture array chip via a wiring pattern, A second terminal array corresponding to the first terminal array is formed on a surface facing the first terminal array, and a notch corresponding to the aperture array is formed in a central portion, and an outer end is formed from the second terminal array. And a holder for fixing the wiring board to the lens barrel in the lens barrel. And a Z stage that holds the first terminal array against the second terminal array by moving the holder in the direction of the optical axis and pressing the first terminal array against the second terminal array. On the one hand, the tip is thinner than the bottom surface, and the charged particle beam emitting device, the blanking aperture array chip, the holder, the Z stage, the optical axis side part of the wiring board and the diaphragm are Charged particles which are arranged in a lens barrel to be evacuated and characterized in that a voltage is applied to the blanking electrode on the blanking aperture array chip through the wiring pattern of the wiring board. Beam exposure device. 2. The lens barrel has a first portion on the charged particle beam emitting device side and a second portion on the opposite side to the charged particle beam emitting device, and the supporter is the mirror of the wiring substrate. A first member that is in close contact with the first surface inside the cylinder and on the charged particle beam emitting device side, and has an outer end that is airtightly continuous with the first portion of the lens barrel; and the mirror of the wiring board. A second member that is in close contact with a second surface inside the barrel and opposite to the first surface, and has an outer end airtightly connected to the second portion of the lens barrel; the first member and the wiring; A first seal member and a second seal member that seal between the substrate and the second member and the wiring substrate, respectively, and an outer end portion of the wiring substrate communicates with the outside of the lens barrel. The charged particle beam exposure apparatus according to claim 1, wherein 3. A terminating resistor disposed on the wiring board and connected to the wiring of the wiring board, a coaxial cable connected to the wiring located at the outer end portion of the wiring board, and the first cable. A cooling device for cooling the member or the second member,
The charged particle beam exposure apparatus according to claim 2, further comprising: 4. The connector according to claim 3, further comprising a connector having one end attached to an outer peripheral portion of the wiring board and electrically connecting the wiring of the wiring board and the coaxial cable. Charged particle beam exposure system. 5. A cooling device, which is arranged in a portion of the wiring board communicating with the outside of the lens barrel and is connected to the wiring of the wiring board, and a cooling device for cooling the first member or the second member. When,
The charged particle beam exposure apparatus according to claim 2, further comprising: 6. A heater for heating the wiring board according to the supplied power, and an electric power according to the number σ of multi-beams passing through the aperture of the diaphragm to reduce the temperature fluctuation of the wiring board. 6. The charged particle beam exposure apparatus according to claim 4, further comprising a heater control device that supplies the heater. 7. The heater control device is configured so that power (aσ +
7. The charged particle beam exposure apparatus according to claim 6, wherein b) is supplied to the heater, and a and b are set constants. 8. A multi-beam control device comprising: a blanking deflector which is arranged between the blanking aperture array chip and the diaphragm, and which deflects the entire multi-beam during standby and cuts off the multi-beam by the diaphragm. In the standby state, a deflection voltage is applied simultaneously to almost all of the blanking electrode pairs of the blanking aperture array chip.
7. The charged particle beam exposure apparatus according to claim 6, wherein. 9. The multi-beam control device alternately deflects substantially half of all the blanking electrode pairs of the blanking aperture array chip into non-overlapping first groups and second groups in the standby state. Application voltage,
9. The charged particle beam exposure apparatus according to claim 8, wherein. 10. The apparatus according to claim 4, wherein the heater is supplied with electric power according to the number σ of the multi-beams passing through the opening of the diaphragm, and the heater heats the wiring board. A charged particle beam exposure method characterized by the above. 11. Electric power (aσ + b) is supplied to the heater, where a and b are constants that can be set, and when the number σ is changed before the actual exposure, the beam is exposed on the object to be exposed. The constant a so that the position does not change
11. The charged particle beam exposure method according to claim 10, wherein b and b are determined. 12. The charged particle beam exposure apparatus has a blanking deflector which is disposed between the blanking aperture array chip and the diaphragm and deflects the entire multi-beam during standby so that the multi-beam is blocked by the diaphragm. 12. The charged particle beam exposure method according to claim 10, wherein a deflection voltage is simultaneously applied to substantially half of all the blanking electrode pairs of the blanking aperture array chip during the standby. . 13. A deflection voltage is alternately applied to substantially half of all the blanking electrode pairs of the blanking aperture array chip in the standby state, to a first group and a second group which do not overlap each other. Claim 1 characterized by the above-mentioned.
2. The charged particle beam exposure method according to 2.