JPS63269525A - Charged particle beam device - Google Patents

Abstract

PURPOSE:To eliminate the generation of heat and the interference between adjacent electron beams and to simply execute a positioning operation by using plural marks by a method wherein charged beams are emitted according to a time series from more than two out of plural changed beam generation sources and each charged beam or its secondary electron or a reflected electron is detected. CONSTITUTION:Out of prealignment marks M1, M2, M7, M8 formed on a wafer WF, a position of, e.g., the mark M1 is read out by a sensor S1; the position of the mark M2 is read out by another sensor; on the basis of this read-out operation, an initial positioning operation of a head MB is executed by using piezoelectric elements Px, Py, Ptheta. When the marks are detected in these cases while an EB is radiated, e.g., from an EB source ES0 toward the mark M7 at different stages, a secondary electron or a reflected electron is generated from the wafer WF. When this electron is received by a sensor formed collectively on the side of a substrate MB, e.g. by a P/N junction, it is possible to execute the positioning operation by a single signal processing means without an influence by the interference between charged beams, and an alignment operation can be executed without installing a special light source and its detection means.

Description

[Detailed Description of the Invention] [Field of Application in Industry] The present invention relates to a charged beam device, and in particular to a device that emits an electron beam from a thin substrate to directly draw an actual device pattern on a square or the like. The present invention relates to a charged beam device suitable for use.

[Prior Art] As an electron generation source in a charged beam device or the like, one that utilizes thermionic emission from a hot cathode has conventionally been used.

Electron emission using such a hot cathode has the disadvantages that there is a large energy loss due to heating, that it is necessary to form a heating means, that it takes a considerable amount of time for preheating, and that the system is easily destabilized by heat. There was a problem with that.

Therefore, research into electron-emitting devices that do not rely on heating is progressing, and several types of devices have been proposed.

For example, a type in which a reverse bias voltage is applied to a PN junction to cause an electron avalanche breakdown phenomenon and emit electrons to the outside of the device (Japanese Unexamined Patent Publication No. 111272/1983, U.S. Patent No. 425
9678) or has a metal-insulator layer-metal layer structure, and by applying a voltage between the two metals, the electrons that have passed through the insulator layer are transferred from the metal layer to the outside of the element due to the tunnel effect. There are surface conduction type types that emit electrons from the surface of the thin film to the outside of the element by applying a voltage to a high-resistance thin film in a direction perpendicular to the film thickness direction. A field-effect type (FE type) in which a voltage is applied to a metal whose shape tends to cause electric field concentration to generate a locally high-density electric field and emit electrons from the metal to the outside of the element;
Others have been proposed.

As an application example of these electron-emitting devices, an electron-emitting device is constructed by arranging a plurality of electron-emitting sources, and electrons are emitted in a desired pattern by controlling ON/OFF of electron emission from each electron-emitting source. It is conceivable that the medium is collided with a medium, for example, the surface of a workpiece, and surface processing or surface modification is performed by electron beam exposure. A conceivable example of such an electron-emitting device is one in which a large number of electron-emitting elements are densely arranged. According to such an electron-emitting device, the surface of the workpiece can be exposed to electron beam in a two-dimensional pattern by simply placing the workpieces facing each other and controlling each electron-emitting element on and off. .

[Problems to be Solved by the Invention] However, at present, it is difficult to mass-produce such an electron-emitting device in which a large number of electron-emitting sources are densely arranged with a high yield. Further, there are problems such as heat generation and interference between adjacent electron beams.

Furthermore, in the above-mentioned conventional example, an improvement in accuracy could not be expected because the device became larger or more complex, and the individual parts were separated.

On the other hand, for example, in electron beam lithography of semiconductor wafers, etc., there is a demand for an electron beam device that can more efficiently and accurately perform beam irradiation, etc. in order to cope with the increasing integration of circuits.

Based on such viewpoints, an object of the present invention is to provide a charged beam device that does not have interference problems and can easily perform alignment using a plurality of marks by appropriately using a plurality of charged beam generation sources. Our goal is to provide the following.

[Means and effects for solving the problems] In order to achieve the above object, the present invention irradiates a sensitive medium with a charged beam using a plurality of charged beam generating sources based on data of a pattern in which the sensitive medium should be irradiated with a charged beam. The charged beam device includes means for emitting charged beams in time series from at least two of the plurality of charged beam generating sources and detecting the charged beams or their secondary or reflected electrons.

Therefore, when the alignment mark on the sensitive medium is detected by the detection means, since the charged beam irradiation and detection are performed in a time-series manner, it is possible to easily distinguish which charged beam is being detected. Interference between beams can also be avoided. Then, by aligning the medium and the charged beam generation source and/or correcting the beam irradiation direction based on the detection result, accurate charged beam irradiation can be performed.

[Example] The present invention will be explained below with reference to the drawings.

FIG. 1 is a schematic diagram showing a configuration when a charged beam device according to an embodiment of the present invention is applied to exposure of a semiconductor pattern. In the figure, WF is a wafer made of a semiconductor such as silicon or gallium, and is coated with a resist that is sensitive to (exposure to) an electron beam. cpt to CPn indicate a plurality of exposure areas, which are cut out into one chip after completion of drawing. M1 to M8 are pre-alignment or fine alignment marks provided on the wafer WF. MB is a head for generating an electron beam (hereinafter referred to as EB), and is mounted on and attracted to the stage MS. The alignment marks M1 to M8 are drawn by the EB of this head during the first drawing process. The stage MS is a piezoelectric element Px such as a piezo.

Py and pθ allow fine movement in the x, y, and θ (rotational) directions, respectively. Each element Px, Py.

Pθ is used for alignment with the wafer WF. Head M
EB generation sources ESO to E S 15 are provided at B.

EB sources ESO and E S 15 are for positioning only, and E
The B generation sources ESI to E S 14 are used exclusively for exposure or for alignment. Here, the exposure EB generation source ES
Two INESs 14 are allocated for drawing each chip row in the X direction on the wafer WF.

That is, for example, the upper half region CPIU of the chip (exposure region) cpi is drawn by the EB generation source ESI, and the lower half region CPIL is drawn by the EB generation source ES2. Similarly, the upper half of each of the exposure areas CP2 to CP5 is connected to the EB generation source ES.
According to I, the lower half is drawn by the EB generation source ES2. Each of the EB generation sources ESO to ES15 has EB deflection electrodes Xi, X2. Y1 and Y2 are provided. Further, sensors S1 to S59, etc. are provided. These sensors may be photosensitive or electronically sensitive.

KB is a keyboard, DP is a display, and CAD is a controller. When a circuit pattern for one chip is designed by these and the information is sent to the one-chip pattern generator PG, the pattern generator PG divides the drawing information for one chip into upper half and lower half drawing information for each station chip. Each memory M sends data to memories M, U, and ML.
U.

ML sends this drawing information to EB source E, which is in charge of the upper half of the chip.
SI, EB3. ES5 to ES13 and EB source ES2 in charge of the lower half. EB4. It is sent to each of ES6 to ES14 at the same time. However, two memories MU and ML are provided, and by using them alternately, the loss in data transfer time from pattern generator PG is substantially eliminated.

Based on the writing information from the memories MU and ML, each EB source is deflected in the X direction by its X direction deflection electrodes XI and X2, thereby performing writing in the X direction within the range that can be covered by the deflection. By continuously moving MB in the Y direction, all pixels in the Y direction of the % area are drawn. However, since the movement in the Y direction is continuous, a shift in the Y direction occurs when drawing in the X direction for each pixel in the Y' direction. Y
2 is used to correct this. Then, one chip row in the Y direction is drawn by repeating this drawing while intermittently moving the wafer WF and head MB relatively in the X direction. ``In this way, each EB source substantially simultaneously targets one chip row in the Y direction of the wafer WF, e.g.
2゜CF13. CF2O, CF27. Since CF34 is drawn, high-speed drawing is possible.

Said deflector 8iX1. X2. Y1 and Y2 are commonly used for initial alignment of the axis of the EB and alignment with the wafer or chip. For example, alignment mark M of chip CP1
'4. The position of M5 is determined by sensor S4. S5 reads each trt of EB source ESI and EB2 based on the read information.
y) x, Y (r4 direction electrode Xi, X2.Y1, Y2 (7)
The EB irradiation position is corrected by correction drive. This chip alignment mark is, for example, mark M6.
The chips CPS and CF13 may be used in common.

On the other hand, Mar M1 is used as a mark for 2 pre-alignment.
, M2. M7. M8 etc. are provided.

Then, for example, the position of the mark M1 is read by a sensor S1, and the position of the mark M2 is read by a sensor (not shown), and based on this, the initial M positioning of the head MB is performed by the piezoelectric elements Px, Py, and Pθ. Then, in this state, the amount of deviation is measured using the chip alignment mark M3, sensor S3, etc., and based on the measurement result, the deflection electrode
i.

X2. Drawing is performed with the position corrected by Y1 and Y2. Also, stop once in the middle of drawing and mark M7. Realignment may be performed using M8.

Although various mark detection methods are possible in these cases, for example, a well-known reflection or secondary electron detection method can be used. That is, for example, the position of the mark M7 can be known by emitting EB from the EB source ESO toward the mark M7 and detecting its reflection or secondary electrons by the sensor S7. As the sensor 7, for example, a semiconductor PN junction is used.

However, in the case of mark detection using such EB, E
The intensity and irradiation time of B need to be set to values that do not interfere with mark reading.

Furthermore, when detecting multiple marks at once, it is preferable to perform EB heat irradiation on each mark at different timings and detect them at different times. According to this, each EB heat irradiation can be easily performed. They can be differentiated and detected by a single signal processing means.

Furthermore, when a photosensitive element such as a CCD is used as a sensor, it is obvious that a light source may be provided instead of the EB source.

FIG. 2(a) is a partial bottom view showing an example of the EB emission head MB, and shows one EB emission source. Figure 2 (
b) and FIG. 2(C) are a BB sectional view and a CC sectional view, respectively.

In FIG. 2, GL is an insulating substrate, and the substrate is made of, for example, glass, ceramics, crystal, or the like. The substrate OL
On the bottom surface of the B-
A large number of them are arranged in one row in the B direction. This EB emission source consists of a high-resistance thin electrode @R3 and electrode D attached to the bottom surface of the substrate GL.
i,02. The high resistance thin film R3 is, for example, Pt,
Au, Mo.

Metal thin films such as C, Pd, SnO2, In2O3, TiO
It is formed by applying high-temperature electricity to a metal oxide thin film such as, causing film destruction. The thickness of the high resistance thin film R5 is, for example, about 100 to 10,000, and the resistance is, for example, about several Ω to several hundred MΩ. As shown in the figure, electrodes DI and D2 are connected to both ends of the high-resistance thin film R3 in the CC direction. The electrode is a general thin film electrode made of metal such as Pt, Au, or Ag.

An insulating layer IS is formed on the lower surface of the substrate GL so as to cover the electrodes DI and D2, except for the portion below the high-resistance thin film RS. The insulating layer is made of, for example, 5i02, SiN
, St, N4. Consists of AIN%BN etc. Insulating layer I
On the lower surface of S, a pair of deflections E tJiXi-X2 and Y
l-Y2 is arranged. The deflection electrode is also the electrode DI.
, D2.

S9. SIO is the aforementioned optical sensor or electronic sensor. These sensors may be further provided one pair in the Y direction, or may be provided in an annular shape. When the EB generation source and the sensor are integrally formed in this manner, the positional relationship between the sensor and the EB generation source is fixed, thereby improving detection accuracy. When using an optical sensor, it is preferable that an alignment light source LP is also built into the head MB, as shown in FIG. 2(C).

When using a solid state device such as a light emitting diode as the light source LP, semiconductor manufacturing technology, thick film
They can be molded simultaneously using thin film manufacturing technology.

Further, when an ultraviolet or even far ultraviolet light source is used as the light source LP, it can also be used for stimulating the resist WR on the wafer WF. If this is done before the EB exposure tip, a thin <;4 soluble layer is formed on the surface of the resist WR, which becomes even more difficult to dissolve at the EB g tip. According to this, the ratio of lll5 to the line width to be drawn can be increased, which improves sensitivity or resolution (aspect ratio), which is preferable. As the resist, for example, the product name RD 200ON J (manufactured by Hitachi Chemical Co., Ltd.) can be used. Moreover, if the light source LP is built into the head MB, preliminary exposure can be performed during relative movement with the wafer WF, which has the advantage that the entire apparatus can be made smaller.

Furthermore, the thin film RS (electron emitting part) may be irradiated with this far ultraviolet light source LP during exposure. This is preferable because the number of emitted electrons increases. Further, when the light source LP is a visible light source, the same effect can be obtained by using a so-called photocathode material for the thin film R3. Examples of photocathode materials include alkali metals and Ag, B1. Sb
A material that exhibits semiconducting properties as a composite material with silver-cesium material,
Various materials such as antimony-cesium material, bismuth-cesium material, and multi-alkali material can be used.

In addition, as an EB source, there are also
A material made of a semiconductor disclosed in Publication No. 1272 (IIsP No. 4259678) may also be used. Alternatively, the thin film R3 may be irradiated with the light source LP only when drawing a thick line width.

FIG. 3 shows multiple <7) EB generation sources ES1. FIG. 3 is a partial cross-sectional view showing an example of an EB emitting head in which ES2 is set as one unit of EB generation source. According to this example, a large amount of electrons can be emitted even when driven at a low voltage, which is preferable.

Also here, if light irradiation is added as before, the efficiency will be even better. Also, the thin line indicates a single EB source, and the thick line indicates multiple EB sources.
By drawing with the B source, the drawing speed can be improved.

In addition, a focusing lens FC and a deflection electrode AD may be attached.Furthermore, if the members to which the lens FC and electrode AD are attached are configured in a multi-chamber configuration and the degree of vacuum is gradually lowered, the E B i light in the atmosphere can be reduced. It becomes possible. That is, as shown in the same figure, member (1). V2. Forming multiple chambers with V3 etc., 1 st.

The degree of vacuum may be lowered in the order of 2nd and 3rd. In this way, the vacuum chuck V can be used for suctioning the wafer WF.
C can also be used. Also, at this time, the sensor Sl
1. S12 may be attached to the lower surface of the member vl or the like.

FIG. 4 is a partial sectional view showing yet another example of an EB emission head. In the same figure, BG is the EB emission source as explained above, but as mentioned above, when the electron beam EB is irradiated from here toward the wafer mark WM, secondary electrons and reflected electrons 2E are generated from the wafer WF. do. and,
A sensor, for example P/
Wafer mark WM is detected by receiving at N junction PN. However, here, in order to detect electrons efficiently, annular electrodes C1 and C2 are attached to the substrate MB side. Further, a voltage Vex is applied between the electrode C1 and the EB generation source BG, and a voltage Vd% is applied to the electrode C2.
A voltage Vc is connected between G and wafer WF as shown.

Therefore, for example Vex = 10-100 V
, Vc=1 to 10 KV and Vd=100 V, respectively, the secondary electrons and reflected electrons 2E can be efficiently collected at the P/N junction part PN.

FIG. 5 is a schematic diagram showing a modification of the device shown in FIG. 1.

In the figure, the head MBI has four EBs per chip.
Sources ESI to ES4 were made to correspond to each other. Each E
The B source is equipped with X and Y deflection electrodes similar to the apparatus of FIG. In this case, for all chips, each 4
Since the two divided areas can be drawn simultaneously by the X and Y deflection electrodes using the same principle as in the case of FIG. 1, the drawing speed is further improved. Further, the head MBI is provided with an alignment mark MM, and alignment between this mark and the wafer alignment mark WMR is performed by light irradiation.

After this alignment, drawing is first performed on all the chips in the Y-direction chip row located below the head MBI at this time. Then, the other chip rows are also intermittent (
Step by step) and repeat the same positioning and drawing.

However, since the wafer WF is usually circular, the wafer alignment mark WMR may not be provided for all the Y-direction chip rows. In this case, alignment may be performed for only one row at the center of the wafer first, and then exposure may be performed without feedback. Or first wafer W
After aligning using the mark WMR at the center of F, advance the exposure to the right, and when the right half is completed, reverse to the left and use the mark WMR again or use the alignment mark WML in the unexposed area. After aligning again using , exposure in the left direction may be performed.

In order to show still another alignment exposure method, a head MB2 is shown in FIG.

In this case, the head MB2 is initially located at the left end portion of the wafer WF, and first, the mark SM provided on the wafer stage is detected by the sensor S1 to perform pre-alignment. Next, in this state, mark M1, M2 and sensor 3
2. The amount of deviation is measured in S3. Then, during exposure, exposure is performed while correcting the amount of deviation described above using both or one of the X, Y (f4 direction electrodes).In the next column, the amount of deviation is measured using mark M3 in the same way as before. , exposure is performed based on the result.Furthermore, the deviation amount measurement and exposure are performed in the same way for the next column, but before that, the mark WML
Re-pre-alignment may be performed using .

In addition, the amount of deviation of the head positioned in that row is measured using mark M4, and after exposing the area covered by each EB source ES and electrodes Xi and X2 at that position, the head or wafer is continuously moved. When the chip row is completed, mark M on the head or square.
It is also possible to stop at position 5 and perform the same operation as before. This can be said to be an intermediate type between the so-called step-and-repeat and step-and-scan exposure methods.

FIG. 6 shows another modification of the device of FIG.

FIG. 2A shows an example in which a plurality of heads MBI and MB2 are provided and are assigned to handle the right half and left half of the wafer WF, respectively. According to this, the throughput can be further improved.

The figure (b) shows a small diameter wafer WF1. This is an example in which WF2 is exposed using a single head MB, and the throughput can also be improved.

The figure (C) is suitable for cases where it is difficult to manufacture a long head or for large diameter wafers WF of 8 inches or more.
Short head MBI, MB2. This is an example in which MB3s are arranged in the Y direction. At this time, since each end usually requires an alignment mark detection part, a strength reinforcement part, etc. as described above, it is preferable to arrange them in a staggered manner as shown in the figure.

In the same figure (d), multiple EB sources are provided in a single head MB,
In addition, the caliber of the emitted EB is made different. In other words, EB@ESI, ES2 is large diameter, EB source E
S3. ES4 is a medium diameter EB source, and EB sources ES5 to ES8... are small diameter EB sources. Usually, the EB sources ES5 to ES8 are used first.
. . is used to expose the medium and large line width portions for the time being, and then the medium and large line width portions are exposed using an EB source ES4. Expose using ES2 or the like. At this time,
The head or wafer is moved so that the corresponding line width portion of each chip can be exposed.

FIG. 7 is a schematic diagram showing still another modification. This E
The B emission head detects the wafer mark based on the magnitude of the current absorbed by the wafer WF, rather than using a sensor provided on the head side.

In the figure, WF is a wafer containing a semiconductor. GL
is a single substrate provided with respective generation sources BG1 to BG7 of a plurality of electron beams EBI to EB7.
The substrates made of glass, semiconductor, etc. described in the above publication can be used. BS is a selection drive circuit for the electron beam generation sources BGI to BG7, CC is an overall control section, and As is an electron beam absorption current detection circuit for detecting alignment marks WMI to WM7 on the wafer WF. Also, if necessary, a second
and an electron lens, a deflection electrode, or a blanking electrode (not shown) as explained using FIG.

In this configuration, the alignment mark on the Uniha WF is now the solid line WM2. After the position of WM6, the actual circuit element pattern becomes inside thereof. Therefore, in this case, first,
Electron beam EB3. for drawing actual circuit element patterns. E
B4. EB5 is an electron beam EB2. for alignment mark detection. EB6 is selected by selection circuit BS. Next, electron beam EB2. Emit EB6 to wafer WF
By detecting the magnitude of the current by a well-known method, mark WM2. Detects the position of WM6.

However, as mentioned above, the electron beams EB2 and EBB are
They are emitted and detected at different timings so that they can be distinguished.

Based on this, the wafer WF is aligned, and then the electron beam EB3. EB4. By EB5, a circuit pattern is exposed as shown in FIG. 1 or FIG.

On the other hand, when the alignment mark is the broken line WM3°WM5, the electron beam EB3. EB5 is used, electron beam EB4 and/or EBI, EB2
．． EB6. EB7 is used for exposure. Also, the broken line WM
When I and WM7 are alignment marks, electron beam EBI.

EB7 is used for alignment, and electron beams EB2 to EB6 are used for exposure.

[Scope of Application of the Invention] The present invention is applicable not only to exposure (drawing) of a semiconductor circuit pattern using an electron beam as explained in the above embodiments, but also to data writing to a recording medium using a charged beam sensitive medium. , it can be applied to reading such data in combination with a charged particle sensor.

Specifically, it can be used for writing and reading purposes, for example, in recording and tracking of magneto-optical recording media such as optical disks and optical cards, or microfilm.

Further, it can be used as an electron beam probe tester for testing semiconductor functions by selecting an electron beam generation source depending on the chip size and measurement point. At this time, it is sufficient to prohibit the output of all electron beam sources other than the measurement electron beam source.

In addition, when the present invention is used for a plurality of applications, it is easy to make the output energy different for each application or even for each electron beam source, and this is suitable for use in the previous embodiment.

[Effect of the invention] As explained above, the present invention has the following effects.

(1) Exposure, etc. can be performed using a plurality of charged beam sources, so processing is quick.

(2) By appropriately arranging a plurality of charged beam generation sources, problems of heat generation and interference between beams can be avoided. Furthermore, since heat generation can be minimized, the durability of the device is excellent.

(3) Since a plurality of electron sources etc. can be integrally molded on a single substrate, it is possible to realize miniaturization and high precision of the device.

(4) Processing speed can be further improved by transferring drawing (irradiation) pattern data to each charged beam generation source without interruption by alternately using a plurality of buffers.

(5) Processing speed can be further improved by arranging a plurality of single substrates having a plurality of charged beam generation sources in parallel.

(6) By arranging a plurality of single substrates having a plurality of charged beam generation sources in series, it is possible to further improve the processing speed for large media.

(7) By irradiating the sensitive medium with ultraviolet rays or the like in advance, the aspect ratio of drawn or written information can be increased.

(8) When emitting an electron beam, by irradiating the electron beam emitting part of the electron beam source with ultraviolet rays, etc.
The efficiency of electron beam generation can be increased. Moreover, the beam intensity can also be adjusted by this.

(9) By configuring one charged beam generation source with a plurality of charged beam emission parts, a large amount of electrons can be emitted even with low voltage fat. Furthermore, the beam intensity can be easily adjusted, and for example, the drawing speed can be improved by making it compatible with drawing thin lines and thick lines.

(10) By providing a vacuum barrier at the charged beam source, the device can be placed in the atmosphere, and therefore, for example, a vacuum chuck can be used for adsorbing the medium. Further, problems caused by contamination can be avoided by providing a sensor or the like in the high vacuum section.

(11) By providing a plurality of types of charged beam generating sources with different sizes of emitted beams, each charged beam generating source can be selectively used depending on the required beam size.

(12) By providing each charged beam generation source with a deflection means, a wide range can be irradiated with the charged beam even in a stationary state, and fine adjustment of the beam direction can be performed accurately and easily.

(13) By detecting alignment marks and the like using charged beams emitted in a time-series manner, alignment can be achieved without interference between charged beams, and detection beams can be easily distinguished.

(14) By providing a means for detecting the charged beam or the secondary or reflected electrons of the charged beam, alignment can be performed without providing a special light source and its detection means, making the device more compact and simple. can be converted into

[Brief explanation of the drawing]

FIG. 1 is a schematic diagram showing the configuration of a charged beam device according to an embodiment of the present invention applied to semiconductor wafer exposure, and FIG. 2 shows a specific example of a head that can be used in the device shown in FIG. The figure (a) is a bottom view, and the figure (b) is a partial view.
BB sectional view of a), the same figure (c) is C-C of the same figure (a)
3 and 4 are partial sectional views showing other examples of heads that can be used in the device shown in FIG. 1; FIG. 5 is a schematic view showing a modified example of the device shown in FIG. 1; This figure is a schematic diagram showing another modification of the device shown in FIG. 1, and FIG. 7 is a schematic diagram showing still another modification of the device shown in FIG. MB, MBI, MB2. MB3: Electron beam emission head, ES, ESO to ES15: Electron beam generation source, WF
, WFI, WF2: wafer, M1~MB, WM
, WMI ~ WM7. WMR: alignment mark, S1-S12; sensor, Xi, X2. Y1, Y
2. AD: Deflection electrode, CP 1 to CP34. CPn:
Exposure area corresponding to 1 chip, MS: stage, Px
, Py. PG: piezoelectric element, CPIU: upper half region, CPIL: lower half region, PG: 1 chip pattern generator, MU
, ML: memory, GL: substrate, R3: high resistance thin film, Di
, D2: electrode, ■S: insulating layer, LP: light source, WR resist, FC: focusing lens, PN: P/
N junction, EB, EBI to EB7: electron beam, CC: control section, AS: detection circuit.

Claims (1)

[Claims] 1. A data source that supplies pattern data to a medium sensitive to charged beams, and a plurality of charged beam generation sources that irradiate the medium with charged beams based on data from the data source;
A charging device characterized by comprising a detection means for emitting charged beams in time series from at least two or more of the plurality of charged beam generation sources and detecting each charged beam or secondary or reflected electrons of each charged beam. Beam device. 2. A charged beam device according to claim 1, wherein said detection means has an absorbed current detection circuit for detecting the magnitude of the current absorbed by said medium. 3. The charged beam device according to claim 1, wherein the detection means has a PN junction provided on the substrate together with the charged beam generation source, and detects secondary or reflected electrons of the charged beam. . 4. The charging device according to claim 1, further comprising deflection means for changing the irradiation direction of the charged beam from each of the charged beam generation sources, the deflection means being controlled based on data supplied by the data source. Beam device. 5. The charged beam device according to claim 1, further comprising position control means for controlling the relative positional relationship between the charged beam generation source and the medium. 6. The charged beam device according to claim 1, wherein the plurality of charged beam generation sources and detection means are arranged on a single substrate.