JP3313586B2 - Electron beam lithography system - Google Patents
Electron beam lithography systemInfo
- Publication number
- JP3313586B2 JP3313586B2 JP23514696A JP23514696A JP3313586B2 JP 3313586 B2 JP3313586 B2 JP 3313586B2 JP 23514696 A JP23514696 A JP 23514696A JP 23514696 A JP23514696 A JP 23514696A JP 3313586 B2 JP3313586 B2 JP 3313586B2
- Authority
- JP
- Japan
- Prior art keywords
- electron
- aperture
- image
- electron beam
- projection lens
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000000609 electron-beam lithography Methods 0.000 title claims description 9
- 239000000463 material Substances 0.000 claims description 43
- 238000010894 electron beam technology Methods 0.000 claims description 38
- 239000000758 substrate Substances 0.000 claims description 18
- 230000003287 optical effect Effects 0.000 claims description 8
- 238000003384 imaging method Methods 0.000 claims description 2
- 238000009826 distribution Methods 0.000 description 8
- 238000007740 vapor deposition Methods 0.000 description 4
- 230000001133 acceleration Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000001678 irradiating effect Effects 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 238000007493 shaping process Methods 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
Landscapes
- Electron Beam Exposure (AREA)
Description
【０００１】[0001]
【発明の属する技術分野】 本発明は、電界放出型電子
銃を備えた電子ビーム描画装置に関する。[0001] 1. Field of the Invention [0002] The present invention relates to an electron beam writing apparatus having a field emission type electron gun.
【０００２】[0002]
【従来の技術】 近時、ＬＳＩ，超ＬＳＩ及び超々ＬＳ
Ｉの製作に電子ビーム描画装置が使用されている。2. Description of the Related Art Recently, LSIs, super LSIs and ultra super LSs have been developed.
An electron beam lithography apparatus is used for manufacturing I.
【０００３】電子ビーム描画装置は、電子銃から発生さ
れた電子ビームを集束して被描画材料上の所定の位置に
照射することにより被描画材料上にＩＣパターンを描く
装置である。この様な電子ビーム描画装置には、大別し
て、スポット状のビームで材料上の所定の領域を走査し
てパターンを描く構造を有する型（スポットビーム型電
子ビーム描画装置と呼ばれている）と、電子光学系中に
所定の形状のアパーチャが開けられたアパーチャ板を配
置し、該アパーチャ板のアパーチャの像を被描画材料の
所定の位置に結像してパターンを描く構造を有する型
（面積型電子ビーム描画装置と呼ばれている）がある。
後者の型の電子ビーム描画装置には、１枚のアパーチャ
板を備えた型（固定面積型電子ビーム描画装置と呼ばれ
ている）と、複数のアパーチャ板と各アパーチャ板の間
に偏向器を備えた型（可変面積型描画装置と呼ばれてい
る）とがある。該可変面積型描画装置は、偏向器で上方
アパーチャを通過したビームを下方アパーチャ板上方で
適宜偏向することによって、所定断面形状のビームが下
方アパーチャを通過する様にしている。該可変面積型描
画装置は、U.S.Pat N0.4,117,340において開示されてい
る。又、最近、下方アパーチャ板として多数のアパーチ
ャを形成したものを使用した電子ビーム断面可変手段を
備えた電子ビーム描画装置が提案されている。An electron beam drawing apparatus is an apparatus that draws an IC pattern on a material to be drawn by focusing an electron beam generated from an electron gun and irradiating the electron beam to a predetermined position on the material to be drawn. Such an electron beam writing apparatus is roughly classified into a type having a structure in which a predetermined area on a material is scanned with a spot beam to draw a pattern (referred to as a spot beam type electron beam writing apparatus). A mold having a structure in which an aperture plate having an aperture of a predetermined shape is arranged in an electron optical system, and an image of the aperture of the aperture plate is formed at a predetermined position on the material to be drawn to draw a pattern (area Type electron beam lithography system).
The latter type of electron beam lithography system includes a type having one aperture plate (referred to as a fixed area type electron beam lithography system) and a plurality of aperture plates and a deflector between each aperture plate. Type (called a variable area type drawing apparatus). In the variable area drawing apparatus, a beam having a predetermined sectional shape passes through the lower aperture by appropriately deflecting the beam passing through the upper aperture by the deflector above the lower aperture plate. The variable area type writing apparatus is disclosed in US Pat. No. 0.4,117,340. Recently, there has been proposed an electron beam drawing apparatus provided with an electron beam section varying means using a lower aperture plate having a large number of apertures formed thereon.
【０００４】前記スポットビーム型電子ビーム描画装置
は電子放出部の像を被描画材料上にスポット状に結像し
ているのに対し、面積型電子ビーム描画装置はアパーチ
ャ板に形成されたアパーチャの大きさに対応した大きさ
のアパーチャ像を被描画材料上に結像している。従っ
て、後者の装置は前者の装置より大きいビームでパター
ンを描く事が出来るので、後者の装置は描画速度が速
く、その為にスループットを上げることが出来る。The spot beam type electron beam lithography apparatus forms an image of an electron emitting portion in a spot shape on a material to be drawn, while the area type electron beam lithography apparatus forms an image of an aperture formed on an aperture plate. An aperture image having a size corresponding to the size is formed on the material to be drawn. Therefore, the latter device can draw a pattern with a beam larger than the former device, so that the latter device has a higher drawing speed and therefore can increase the throughput.
【０００５】電子ビーム描画装置においては、電子銃陰
極として、通常、電界放出型エミッタか、加熱したラン
タンヘキサボラロイド（ＬａＢ6 ）が用いられている。
前者の陰極を備えた電子銃（電界放出型電子銃）は電子
発生部の輝度Ｂが著しく高い（１０8 ｃｄ／ｃｍ2 程
度）く、初速度分布Δｖが小さく、電流密度分布の幅が
狭く且つ電流密度の強度は高い。一方、後者の陰極を備
えた電子銃は電子発生部の輝度Ｂが低く（１０6 ｃｄ／
ｃｍ2 程度）、初速度分布Δｖが大きく、電流密度分布
の幅が広く且つ電流密度の強度が一様に低い。In an electron beam lithography system, a field emission type emitter or a heated lanthanum hexaboraloid (LaB 6 ) is usually used as an electron gun cathode.
In the former electron gun having a cathode (field emission electron gun), the brightness B of the electron generating portion is extremely high (about 10 8 cd / cm 2 ), the initial velocity distribution Δv is small, and the width of the current density distribution is narrow. Moreover, the intensity of the current density is high. On the other hand, the latter electron gun provided with the cathode has a low brightness B of the electron generating portion (10 6 cd /
cm about 2), large initial velocity distribution Delta] v, the width of the current density distribution is wide and the current density is uniformly low strength.
【０００６】ここで、被描画材料への電子ビームの入射
角の１／２をα、電子銃の電子放出部の輝度をＢとする
と、被描画材料上へショットされる電子ビームの電流密
度ρは、 ρ＝Ｂπα2 （１） と表わされる。Here, assuming α of the incident angle of the electron beam on the material to be drawn and B as the luminance of the electron emitting portion of the electron gun, the current density ρ of the electron beam shot onto the material to be drawn Is expressed as ρ = Bπα 2 (1).
【０００７】又、電子ビーム描画装置における電子ビー
ムの加速電圧をＶとすると、被描画材料上の像の解像度
Ｓは、Δｖ／Ｖに比例する。When the acceleration voltage of the electron beam in the electron beam writing apparatus is V, the resolution S of the image on the material to be drawn is proportional to Δv / V.
【０００８】[0008]
【発明が解決しようとする課題】 さて、電界放出型電
子銃を前記スポットビーム型電子ビーム描画装置に用い
た場合、電子発生部の輝度Ｂは著しく高いので十分大き
な電流密度（例えば、１０００Ａ／ｃｍ2 程度）を有
し、且つ解像度Ｓの良い（０．０１μ程度）電子発生部
像を被描画材料上に結像することが出来る。しかし、被
描画材料上に結像される像の径が極めて小さい（０．０
５μｍ程度）為に描画速度を上げることが出来ず、その
為に高いスループットが望めない。若し、被描画材料上
に結像される像をぼかすことによりその径を大きくすれ
ば、像の解像度や電流密度が低下してしまう。電子銃と
して電界放出型電子銃を用いたスポットビーム型電子ビ
ーム描画装置が、J.Vac.Technol.B6(6), Nov/Dec 1988
において、H.Nakazawa，H.Takemura, M.Isobe, Y.Nakag
awa, M.Hassel andW.Thomson によって開示されてい
る。 ＬａＢ6 陰極を備えた電子銃を前記面積型電子ビ
ーム描画装置に使用した場合、被描画材料上に大きく
（例えば、５μｍ×５μｍ程度）、像全体の電流密度分
布が一様なアパーチャ像を結像出来る。しかし、電子放
出部の輝度Ｂが小さいので、十分大きな電流密度のアパ
ーチャ像を被描画材料上に結像出来ない（大略、１０Ａ
／ｃｍ2 ）。その為にあまり高いスループットが望めな
い。且つ、そのアパーチャ像の解像度も良くない（０．
１μ程度）。When a field emission type electron gun is used in the spot beam type electron beam writing apparatus, the brightness B of the electron generating portion is extremely high, so that a sufficiently large current density (for example, 1000 A / cm) is used. 2 ) and a good resolution S (about 0.01 μ) can be formed on the material to be drawn. However, the diameter of the image formed on the drawing material is extremely small (0.0
(Approximately 5 μm), the drawing speed cannot be increased, and a high throughput cannot be expected. If the diameter formed by blurring the image formed on the material to be drawn is increased, the resolution of the image and the current density are reduced. J. Vac.Technol.B6 (6), Nov / Dec 1988
In, H. Nakazawa, H. Takemura, M. Isobe, Y. Nakag
awa, M. Hassel and W. Thomson. When an electron gun equipped with a LaB 6 cathode is used in the area type electron beam writing apparatus, an aperture image having a large (eg, about 5 μm × 5 μm) and uniform current density distribution of the entire image is formed on the material to be drawn. I can image it. However, since the brightness B of the electron-emitting portion is small, an aperture image having a sufficiently large current density cannot be formed on the material to be drawn (generally, 10 A).
/ Cm 2 ). Therefore, high throughput cannot be expected. In addition, the resolution of the aperture image is not good (0.
About 1μ).
【０００９】電界放出型電子銃を前記面積型電子ビーム
描画装置に使用した場合、被描画材料上に大きく（例え
ば、５μｍ×５μｍ程度）、且つ解像度Ｓの良い（０．
０１μ程度）アパーチャ像を被描画材料上に結像するこ
とが出来る。しかし、電子発生部の輝度Ｂは著しく高い
が、電子線源の径ｄが極めて小さいので前記αが極めて
小さい。その為に、十分大きな電流密度のアパーチャ像
を結像出来ず（例えば、１Ａ／ｃｍ2 程度）、高いスル
ープットが望めない。When a field emission type electron gun is used in the area type electron beam writing apparatus, it is large (for example, about 5 μm × 5 μm) on a material to be drawn and has a good resolution S (0.
An aperture image can be formed on a material to be drawn. However, although the brightness B of the electron generating portion is extremely high, the value α is extremely small because the diameter d of the electron beam source is extremely small. Therefore, an aperture image having a sufficiently large current density cannot be formed (for example, about 1 A / cm 2 ), and high throughput cannot be expected.
【００１０】本発明は、大きく、像全体の電流密度分布
が一様で、その電流密度強度が高く、且つ解像度の高い
アパーチャ像を材料上に形成出来る新規な電子ビーム描
画装置を提供する事を目的とする。An object of the present invention is to provide a novel electron beam writing apparatus capable of forming an aperture image on a material which is large, has a uniform current density distribution over the entire image, has a high current density intensity, and has a high resolution. Aim.
【００１１】[0011]
【課題を解決するための手段】 請求項１の発明に基づ
く電子ビーム描画装置は、複数の針状陰極を有する電界
放出型電子発生源から成る電子銃と、前記電子銃から放
出された電子ビームの断面形状を決定するビーム断面形
状設定用アパーチャ板と、前記アパーチャ板のアパーチ
ャの像を被描画材料上に結ぶ投影レンズと、前記電子銃
と前記投影レンズの間に配置され、前記電子銃の電子放
出部の像を前記投影レンズの前焦点位置に結ぶ集束レン
ズと、前記被描画材料上におけるアパーチャ像の結像位
置を決める電子ビーム偏向器を備えた事を特徴としてい
る。According to a first aspect of the present invention, there is provided an electron beam writing apparatus including an electron gun including a field emission type electron source having a plurality of needle-shaped cathodes, and an electron beam emitted from the electron gun. An aperture plate for setting a beam cross-sectional shape for determining a cross-sectional shape of the beam, a projection lens for forming an image of the aperture of the aperture plate on a material to be drawn, and disposed between the electron gun and the projection lens; It is characterized in that it comprises a focusing lens for connecting the image of the electron-emitting portion to the front focal position of the projection lens, and an electron beam deflector for determining an image forming position of the aperture image on the material to be drawn.
【００１２】請求項２の発明に基づく電子ビーム描画装
置は、複数の針状陰極を有する電界放出型電子発生源か
ら成る電子銃と、電子光学軸上に配置された複数のアパ
ーチャ板と、該アパーチャ板の間に配置された電子ビー
ム偏向器とから成るビーム断面形状設定手段と、前記被
描画材料側に近いアパーチャ板のアパーチャの像を材料
上に結ぶ投影レンズと、前記電子銃と前記投影レンズの
間に配置され、前記電子銃の電子放出部の像を前記投影
レンズの前焦点位置に結ぶ集束レンズと、前記被描画材
料上におけるアパーチャ像の結像位置を決める電子ビー
ム偏向器を備えた事を特徴としている。According to a second aspect of the present invention, there is provided an electron beam writing apparatus comprising: an electron gun comprising a field emission type electron source having a plurality of needle-like cathodes; a plurality of aperture plates arranged on an electron optical axis; Beam cross-sectional shape setting means comprising an electron beam deflector disposed between aperture plates, a projection lens for forming an image of an aperture of the aperture plate close to the material to be drawn on a material, and a projection lens for the electron gun and the projection lens. A focusing lens which is arranged between the electron gun and an image of the electron emitting portion of the electron gun at a front focal position of the projection lens; and an electron beam deflector which determines an image forming position of the aperture image on the material to be drawn. It is characterized by.
【００１３】請求項３の発明に基づく電子ビーム描画装
置は、基板上に複数の針状陰極が配列されており、該各
陰極を夫々取り囲む孔が開けられた絶縁層と陽極が前記
基板上にこの順序で重なるように形成された複数の電界
放出型電子発生源から成る電子銃を備えた事を特徴とし
ている。According to a third aspect of the present invention, there is provided an electron beam writing apparatus, wherein a plurality of needle-shaped cathodes are arranged on a substrate, and an insulating layer and an anode each having a hole surrounding each cathode are formed on the substrate. An electron gun comprising a plurality of field emission type electron sources formed so as to overlap in this order is provided.
【００１４】請求項４の発明に基づく電子ビーム描画装
置は、光源の像が結ばれる位置にビーム電流調整用の絞
り板を配置した事を特徴としている。An electron beam writing apparatus according to a fourth aspect of the present invention is characterized in that an aperture plate for adjusting a beam current is arranged at a position where an image of a light source is formed.
【００１５】[0015]
【発明の実施の形態】 以下、図面を参照して本発明の
実施の形態を詳細に説明する。図１は本発明の一例とし
て電子ビーム描画装置の概略を示している。図中１は電
子銃で、図２に一部断面形状を示した。図２において、
２は基板（例えば、Ｓｉ板）で、該基板上には、絶縁層
３（例えば、ＳｉＯ2 層）が形成されている。該絶縁層
の上に、例えば、金属を蒸着で積層した陽極４が形成さ
れている。５は前記絶縁層３及び陽極４を貫通した孔
で、例えば、縦，横１０個のマトリックス状に１００個
設けられている。尚、前記マトリックスの１つの升目の
広さは凡そ１０μｍ×１０μｍ程度である。この各穴の
前記基板２上に針状陰極（チップ）６が形成されてい
る。この様な針状陰極は例えば、次の様にして形成され
る。Embodiments of the present invention will be described below in detail with reference to the drawings. FIG. 1 schematically shows an electron beam drawing apparatus as an example of the present invention. In FIG. 1, reference numeral 1 denotes an electron gun, and FIG. In FIG.
Reference numeral 2 denotes a substrate (for example, a Si plate), on which an insulating layer 3 (for example, a SiO 2 layer) is formed. On the insulating layer, for example, an anode 4 formed by depositing a metal by vapor deposition is formed. Reference numeral 5 denotes a hole penetrating the insulating layer 3 and the anode 4 and, for example, 100 holes are provided in a matrix of 10 rows and 10 columns. The width of one cell of the matrix is about 10 μm × 10 μm. A needle cathode (chip) 6 is formed on the substrate 2 in each of the holes. Such a needle-shaped cathode is formed, for example, as follows.
【００１６】前記した様に基板２の上に絶縁層３と陽極
４を形成し、更に孔５を形成しておく。この状態におい
て、陽極４の上方から、各孔５を通して基板上に、Ｗ若
しくはＭｏの如き金属の蒸気を既知の蒸着方法により堆
積させる。この蒸着により各孔内に針状に近い形の陰極
が形成される。この後、各孔内にイオンビームを照射し
て各孔内の陰極をエッチングし、図２に示す如き針状陰
極６を基板２上に形成する。尚、蒸着方法の代わりに既
知のエピタキシャル成長方法により針状陰極を基板上に
形成しても良い。As described above, the insulating layer 3 and the anode 4 are formed on the substrate 2, and the holes 5 are further formed. In this state, a metal vapor such as W or Mo is deposited on the substrate from above the anode 4 through the holes 5 by a known vapor deposition method. By this vapor deposition, a needle-like cathode is formed in each hole. Thereafter, each hole is irradiated with an ion beam to etch the cathode in each hole, thereby forming a needle-shaped cathode 6 on the substrate 2 as shown in FIG. The needle-shaped cathode may be formed on the substrate by a known epitaxial growth method instead of the vapor deposition method.
【００１７】前記陽極４と基板２との間には電源７から
正の電圧が印加されるように成されている。尚、前記基
板２は、Ｓｉ板の様な半導体基板でも良いし、ガラス板
の上に、例えば、Ａｕを蒸着した、導電性のものでも良
い。前記図１において、８は集束レンズで、前記電子銃
１の電子放出部の像を後述する投影レンズ１３の前焦点
位置に結像するものである。該レンズの中、若しくは該
レンズの近くに、該レンズの光軸を垂直に横切る様にア
パーチャ板９が配置されている。該アパーチャ板には、
例えば、図３に示す様に、任意のアパーチャが開けられ
ている。又、該アパーチャ板は、制御装置１０からの指
令を受けた移動機構１１により、何れかのアパーチャが
光軸上に来る様に光軸に垂直な面上で移動可能に成して
ある。尚、前記アパーチャ板９は前記集束レンズ８と投
影レンズ１３の間の任意の位置に配置してもよい。１３
は投影レンズで、前記アパーチャの像を前記被描画材料
１２上に結像すると同時に、前記集束レンズ８により結
像された電子放出部像からのビームを平行に前記被描画
材料上に照射する。１４は前記集束レンズ８の前焦点位
置（前記電子放出部像結像位置）に配置された電流調整
用絞り板である。該電流調整用絞り板は、前記被描画材
料１２上に到達する電子ビーム量をコントロールするも
ので、前記制御装置１０からの指令を受けたビーム電流
コントロール信号発生器１５により絞り径を適宜変える
様に成してある。該電流調整用絞り板としては、例え
ば、径の異なる複数の穴が一直線上に設けられ、該直線
に沿って移動可能に成した板や、矩形の穴が１個設けら
れた板２枚を重ね、互いにずらすことが可能に成したも
の等の何れかが使用される。尚、該電流調整用絞り板を
前記電子放出部像結像位置以外の所に配置すると被描画
材料上に結像されるアパーチャ像の電流密度分布が一様
でなくなる。１６は投影レンズ１３によるアパーチャ像
の材料上での結像位置をコントロールする位置決め用偏
向器で、前記制御装置１０からの指令を受けたビーム位
置信号発生器１７により作動するものである。１８はパ
ターンデータメモリ、１９，２０，２１はＤＡ変換器で
ある。A positive voltage is applied from a power supply 7 between the anode 4 and the substrate 2. The substrate 2 may be a semiconductor substrate such as a Si plate, or may be a conductive substrate in which, for example, Au is deposited on a glass plate. In FIG. 1, reference numeral 8 denotes a focusing lens which forms an image of an electron emitting portion of the electron gun 1 at a front focal position of a projection lens 13 described later. An aperture plate 9 is disposed in or near the lens so as to vertically cross the optical axis of the lens. In the aperture plate,
For example, as shown in FIG. 3, an arbitrary aperture is opened. Further, the aperture plate can be moved on a plane perpendicular to the optical axis by a moving mechanism 11 receiving a command from the control device 10 such that any of the apertures comes on the optical axis. The aperture plate 9 may be arranged at any position between the focusing lens 8 and the projection lens 13. 13
A projection lens forms an image of the aperture on the material to be drawn 12 at the same time as irradiating a beam from the electron emission portion image formed by the focusing lens 8 onto the material to be drawn in parallel. Reference numeral 14 denotes a current adjusting aperture plate disposed at a front focal position of the focusing lens 8 (the image forming position of the electron emission unit). The current adjusting aperture plate controls the amount of the electron beam reaching the material 12 to be drawn, and the beam diameter is appropriately changed by a beam current control signal generator 15 which receives a command from the control device 10. It is made up. As the current adjusting diaphragm plate, for example, a plate in which a plurality of holes having different diameters are provided on a straight line and which can be moved along the straight line or two plates provided with one rectangular hole is used. Any of those that can be stacked and shifted from each other are used. If the aperture plate for current adjustment is arranged at a position other than the image forming position of the electron emission portion, the current density distribution of the aperture image formed on the material to be drawn becomes non-uniform. Reference numeral 16 denotes a positioning deflector for controlling the image forming position of the aperture image on the material by the projection lens 13, and is operated by a beam position signal generator 17 which receives a command from the controller 10. Reference numeral 18 denotes a pattern data memory, and reference numerals 19, 20, and 21 denote DA converters.
【００１８】この様な構成の動作を次に説明する。The operation of such a configuration will now be described.
【００１９】先ず、電子銃１において、電源７から陽極
４と基板２との間に例えば、＋５０Ｖ程度の電圧を印加
すると、該陽極４と基板２との間に形成された電界によ
り、該電子銃１を成す各電界放出型電子発生源のチップ
６から電子が放出される。該放出電子を加速電極（図示
せず）と前記基板２との間に印加された加速電圧（たと
えば、数ＫＶ）によりに被描画材料方向に加速する。各
チップの電子放出部の像が集束レンズ８により電流調整
用絞り板１４の位置に結像される。この際、パターンデ
ータメモリ１８からのパターンデータに基づいて、制御
装置１０からアパーチャ選択指令がＤＡ変換器１９を介
して移動機構１１に送られているので、光軸上に所定の
アパーチャが位置するようにアパーチャ板９が移動す
る。従って、各チップの電子放出部から放出された電子
はこの選択されたアパーチャを通過し、その断面形状が
該アパーチャの形状に対応したものになる。そして、こ
のアパーチャの像が投影レンズ１３により被描画材料１
２上に結像される。即ち、前記チップの数に対応した数
のアパーチャ像が材料上に重畳して結像される。又、同
時に、投影レンズ１３の前焦点位置に前記電子放出部の
像が結ばれているので、該投影レンズは該電子放出部像
からのビームを並行に前記被描画材料１２上に照射す
る。即ち。前記アパーチャを通過した電子は前記結像範
囲に照射されることになる。この時、パターンデータメ
モリ１８からのパターンデータに基づいて制御装置１０
からショット位置指令がＤＡ変換器２１及びビーム位置
信号発生器１７を介して位置決め用偏向器１６に送られ
ている。前記投影レンズ１３を通過した電子ビームは前
記位置決め用偏向器１６により所定の偏向を受けるの
で、前記アパーチャ像は被描画材料１２上の所定の位置
に結像される。尚、前記被描画材料１２上に結像される
アパーチャ像のビーム電流密度は前記電流調整用絞板１
４の絞径を調整することによりコントロールされる。First, in the electron gun 1, when a voltage of, for example, about +50 V is applied between the anode 4 and the substrate 2 from the power supply 7, the electric field formed between the anode 4 and the substrate 2 causes Electrons are emitted from the chip 6 of each field emission type electron source constituting the gun 1. The emitted electrons are accelerated in the direction of the material to be drawn by an acceleration voltage (for example, several KV) applied between an acceleration electrode (not shown) and the substrate 2. An image of the electron-emitting portion of each chip is formed by the focusing lens 8 at the position of the current adjusting aperture plate 14. At this time, since the aperture selection command is sent from the control device 10 to the moving mechanism 11 via the DA converter 19 based on the pattern data from the pattern data memory 18, a predetermined aperture is located on the optical axis. The aperture plate 9 moves as described above. Therefore, the electrons emitted from the electron emission portion of each chip pass through the selected aperture, and the cross-sectional shape thereof corresponds to the shape of the aperture. Then, the image of the aperture is converted by the projection lens 13 into the material 1 to be drawn.
2 is imaged. That is, a number of aperture images corresponding to the number of the chips are formed so as to be superimposed on the material. At the same time, since the image of the electron-emitting portion is formed at the front focal position of the projection lens 13, the projection lens irradiates the beam from the image of the electron-emitting portion onto the drawing material 12 in parallel. That is. The electrons that have passed through the aperture are radiated to the imaging area. At this time, the control device 10 is controlled based on the pattern data from the pattern data memory 18.
Is sent to the positioning deflector 16 via the DA converter 21 and the beam position signal generator 17. The electron beam that has passed through the projection lens 13 undergoes a predetermined deflection by the positioning deflector 16, so that the aperture image is formed at a predetermined position on the drawing target material 12. Note that the beam current density of the aperture image formed on the material to be drawn 12 is the same as that of the current adjusting aperture plate 1.
4 is controlled by adjusting the aperture.
【００２０】この様に、複数の電界放出型電子発生源か
ら成る電子銃と、該電子銃から放出された電子ビームの
断面形状を決定するビーム断面形状設定用アパーチャ板
と、該アパーチャ板のアパーチャの像を被描画材料上に
結像する投影レンズと、前記電子銃と前記投影レンズの
間に配置され、前記各電界放出型電子発生源の電子放出
部の像を前記投影レンズの前焦点位置に結像する集束レ
ンズとを備え、前記各アパーチャ像を被描画材料上の所
定の位置に重ねて結像する様に成したので、大きく（例
えば、５μｍ×５μｍ程度）、像全体の電流密度分布が
一様で、その電流密度強度が高く（例えば、大略１００
Ａ／ｃｍ2 ）、且つ解像度の高い（凡そ０．０１μｍ）
アパーチャ像が結像される。As described above, an electron gun composed of a plurality of field emission type electron sources, an aperture plate for setting a cross-sectional shape of an electron beam emitted from the electron gun, and an aperture of the aperture plate A projection lens for forming an image on the material to be drawn, and an image of the electron emission unit of each of the field emission type electron sources arranged between the electron gun and the projection lens. And a focusing lens that forms an image at a predetermined position on the material to be drawn, so that the aperture density is large (for example, about 5 μm × 5 μm), and the current density of the entire image is large. The distribution is uniform and the current density intensity is high (for example, approximately 100
A / cm 2 ) and high resolution (approximately 0.01 μm)
An aperture image is formed.
【００２１】尚、前記実施例では、アパーチャ板として
複数のアパーチャを設けたものを使用したが、決まった
アパーチャしか用いない場合には、１つのアパーチャを
設けたアパーチャ板を用いても良い。この場合には、移
動機構１１は不要となる。又、前記実施例では移動機構
によりアパーチャ板を移動させ、アパーチャを選択する
ように成したが、電子銃とアパーチャ板の間にアパーチ
ャ選択用偏向器を設け、この偏向器にアパーチャ選択指
令を送り、電子銃からの電子ビームを適宜偏向して所定
のアパーチャに照射される様に成しても良い。更に、前
記実施例では電子銃は１００個の電界放出型電子発生源
を有したが、この数に限定され無い。In the above embodiment, the aperture plate provided with a plurality of apertures is used. However, if only a fixed aperture is used, an aperture plate provided with one aperture may be used. In this case, the moving mechanism 11 becomes unnecessary. In the above-described embodiment, the aperture plate is moved by the moving mechanism to select the aperture.However, an aperture selection deflector is provided between the electron gun and the aperture plate, and an aperture selection command is sent to this deflector to transmit the electron. The electron beam from the gun may be appropriately deflected so as to irradiate a predetermined aperture. Further, in the above embodiment, the electron gun has 100 field emission electron sources, but the number is not limited to this.
【００２２】更に又、本発明は、夫々矩形若しくは正方
形状アパーチャが開けられた複数のアパーチャ板と、各
アパーチャ板の間に形状及び大きさ指定用偏向器が配置
され、上方アパーチャを通過したビームを該偏向器によ
り適宜偏向して下方アパーチャ上に照射し、該下方アパ
ーチャから所定の形状及び大きさの断面を有するビーム
を得、このビームを材料上に結像する構成の荷電粒子ビ
ーム描画装置にも応用可能である。図４はその光学図を
示したものである。図中２２は上方アパーチャ板、２３
は下方アパーチャ板、２４は成形レンズ、２５は成形用
偏向器で、投影レンズ１３は、光源像からのビームを材
料１２上に並行に照射すると同時に、下方アパーチャの
像を材料上に結ぶように働く。Further, according to the present invention, a plurality of aperture plates each having a rectangular or square aperture is provided, and a shape and size designation deflector is arranged between the aperture plates. The deflector appropriately deflects the light and irradiates it on the lower aperture, obtains a beam having a cross section of a predetermined shape and size from the lower aperture, and forms a charged particle beam drawing apparatus configured to image this beam on a material. Applicable. FIG. 4 shows the optical diagram. In the figure, 22 is an upper aperture plate, 23
Is a lower aperture plate, 24 is a shaping lens, 25 is a shaping deflector, and the projection lens 13 irradiates a beam from the light source image onto the material 12 in parallel and simultaneously forms an image of the lower aperture on the material. work.
【図１】 本発明の一例として電子ビーム描画装置の概
略を示している。FIG. 1 schematically shows an electron beam writing apparatus as an example of the present invention.
【図２】 本発明の電子銃の一例を示している。FIG. 2 shows an example of an electron gun of the present invention.
【図３】 本発明のアパーチャ板の一例を示している。FIG. 3 shows an example of an aperture plate of the present invention.
【図４】 本発明の他の実施例を示している。FIG. 4 shows another embodiment of the present invention.
１ 電子銃 ２ 基板 ３ 絶縁層 ４ 陽極 ５ 孔 ６ チップ ７ 電源 ８ 集束レンズ ９ アパーチャ板 １０ 制御装置 １１ 移動機構 １２ 被描画材料 １３ 投影レンズ １４ 電流調整用絞り板 １５ ビーム電流コントロール信号発生器 １６ 位置決め用偏向器 １７ ビーム位置信号発生器 １８ パターンデータメモリ １９，２０，２１ ＤＡ変換器 ２２ 下方アパーチャ板 ２３ 下方アパーチャ板 ２４ 成形レンズ ２５ 成形用偏向器 DESCRIPTION OF SYMBOLS 1 Electron gun 2 Substrate 3 Insulating layer 4 Anode 5 Hole 6 Chip 7 Power supply 8 Focusing lens 9 Aperture plate 10 Control device 11 Moving mechanism 12 Drawing material 13 Projection lens 14 Current adjustment aperture plate 15 Beam current control signal generator 16 Positioning Deflector 17 Beam position signal generator 18 Pattern data memory 19, 20, 21 DA converter 22 Lower aperture plate 23 Lower aperture plate 24 Molding lens 25 Molding deflector
───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 平６−338445（ＪＰ，Ａ) 特開 平７−153655（ＪＰ，Ａ) 特開 昭61−263217（ＪＰ，Ａ) 特開 昭54−61880（ＪＰ，Ａ) 特開 平６−181172（ＪＰ，Ａ) 特開 平６−84773（ＪＰ，Ａ) 特開 平５−175113（ＪＰ，Ａ) 特開 平７−221002（ＪＰ，Ａ) (58)調査した分野(Int.Cl.7，ＤＢ名) H01L 21/027 ────────────────────────────────────────────────── ─── Continuation of the front page (56) References JP-A-6-338445 (JP, A) JP-A-7-153655 (JP, A) JP-A-61-263217 (JP, A) JP-A-54-1988 61880 (JP, A) JP-A-6-181172 (JP, A) JP-A-6-84773 (JP, A) JP-A-5-175113 (JP, A) JP-A-7-221002 (JP, A) (58) Field surveyed (Int. Cl. 7 , DB name) H01L 21/027
Claims (4)
発生源から成る電子銃と、 前記電子銃から放出された電子ビームの断面形状を決定
するビーム断面形状設定用アパーチャ板と、 前記アパーチャ板のアパーチャの像を被描画材料上に結
ぶ投影レンズと、 前記電子銃と前記投影レンズの間に配置され、前記電子
銃の電子放出部の像を前記投影レンズの前焦点位置に結
ぶ集束レンズと、 前記被描画材料上におけるアパーチャ像の結像位置を決
める電子ビーム偏向器を備えた電子ビーム描画装置。An electron gun including a field emission type electron source having a plurality of needle-shaped cathodes; an aperture plate for setting a cross-sectional shape of an electron beam emitted from the electron gun; and the aperture. A projection lens for forming an image of the aperture of the plate on the material to be drawn; and a focusing lens disposed between the electron gun and the projection lens, for forming an image of the electron emission portion of the electron gun at a front focal position of the projection lens. An electron beam lithography apparatus comprising: an electron beam deflector that determines an image forming position of an aperture image on the material to be drawn.
発生源から成る電子銃と、 電子光学軸上に配置された複数のアパーチャ板と、該ア
パーチャ板の間に配置された電子ビーム偏向器とから成
るビーム断面形状設定手段と、 前記被描画材料側に近いアパーチャ板のアパーチャの像
を材料上に結ぶ投影レンズと、 前記電子銃と前記投影レンズの間に配置され、前記電子
銃の電子放出部の像を前記投影レンズの前焦点位置に結
ぶ集束レンズと、 前記被描画材料上におけるアパーチャ像の結像位置を決
める電子ビーム偏向器を備えた電子ビーム描画装置。2. An electron gun comprising a field emission type electron source having a plurality of needle-like cathodes, a plurality of aperture plates disposed on an electron optical axis, and an electron beam deflector disposed between the aperture plates. A beam cross-sectional shape setting means, a projection lens for forming an image of an aperture of an aperture plate near the material to be drawn on a material, and an electron emission device arranged between the electron gun and the projection lens. An electron beam writing apparatus, comprising: a focusing lens for connecting an image of the unit to a front focal position of the projection lens; and an electron beam deflector for determining an imaging position of an aperture image on the material to be drawn.
り、該各陰極を夫々取り囲む孔が開けられた絶縁層と陽
極が前記基板上にこの順序で重なるように形成された複
数の電界放出型電子発生源から成る電子銃を備えた前記
請求項１又は２記載の電子ビーム描画装置。3. A plurality of needle-shaped cathodes are arranged on a substrate, and a plurality of insulating layers each having a hole surrounding each cathode and an anode are formed on the substrate so as to overlap in this order. 3. The electron beam writing apparatus according to claim 1, further comprising an electron gun comprising a field emission type electron source.
ーム電流調整用の絞り板を配置した前記請求項１又は２
記載の電子ビーム描画装置。4. An aperture plate for adjusting a beam current at a position where an image of the electron-emitting portion is formed.
An electron beam writing apparatus according to any one of the preceding claims.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23514696A JP3313586B2 (en) | 1995-09-25 | 1996-09-05 | Electron beam lithography system |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24628195 | 1995-09-25 | ||
| JP7-246281 | 1995-09-25 | ||
| JP23514696A JP3313586B2 (en) | 1995-09-25 | 1996-09-05 | Electron beam lithography system |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH09153455A JPH09153455A (en) | 1997-06-10 |
| JP3313586B2 true JP3313586B2 (en) | 2002-08-12 |
Family
ID=26531977
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23514696A Expired - Fee Related JP3313586B2 (en) | 1995-09-25 | 1996-09-05 | Electron beam lithography system |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3313586B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100403807B1 (en) * | 1997-06-30 | 2004-01-14 | 삼성전자주식회사 | Method for manufacturing panel type field emitter using insulating pattern |
-
1996
- 1996-09-05 JP JP23514696A patent/JP3313586B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH09153455A (en) | 1997-06-10 |
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