CN117766361A - Electron beam direct writing apparatus and electron beam direct writing method - Google Patents

Abstract

The application provides an electron beam direct writing device and an electron beam direct writing method, wherein the electron beam direct writing device comprises: an electron source including a plurality of electron source modules, at least one of the electron source modules including a plurality of electron source units, each of the electron source units generating a corresponding electron beam; and a controller that controls the electron source to generate at least one of the electron beams; the plurality of electron source units of at least one electron source module comprise at least one first electron source unit and at least one second electron source unit, the electron beam generated by each first electron source unit corresponds to the electron beam with a first beam spot, the electron beam generated by each second electron source unit corresponds to the electron beam with a second beam spot, and the area of the first beam spot is more than 2 times of the area of the second beam spot. The method and the device not only ensure the fineness of the direct writing of the electron beam, but also can improve the speed of the direct writing of the electron beam.

Description

Electron beam direct writing apparatus and electron beam direct writing method

Technical Field

The present disclosure relates to the field of semiconductor integrated circuit manufacturing technologies, and in particular, to an electron beam direct writing apparatus and an electron beam direct writing method.

Background

The development of the semiconductor micromachining industry has placed increasing demands on electron beam direct writing technology. Such requirements include assurance of fine pattern imaging accuracy, and a substantial increase in write-through speed. In response to this industry demand, multi-e-beam direct writing technology is being developed, which plays an irreplaceable role in direct writing of fine patterns in integrated circuit manufacturing processes.

In particular, in semiconductor manufacturing, imaging of high-technology node patterns (e.g., patterns of photomasks and structural patterns of device layers) requires both finer and more accurate direct writing and high-speed direct writing with a rapid increase in the amount of pattern data. From the viewpoint of accurate direct writing of fine patterns, it is necessary to reduce the electron beam spot so as to perform accurate scanning. When the current density is constant, reducing the beam spot means reducing the current of the electron beam, and as a result, the write-through time becomes longer. On the other hand, when the pattern size to be written is several tens of nanometers or less, the smaller the line width, the more remarkable the influence of shot noise (shot noise), which seriously affects the uniformity of critical line width (critical dimension uniformity) and the roughness of line edges (line edge roughness).

It should be noted that the foregoing description of the background art is only for the purpose of facilitating a clear and complete description of the technical solutions of the present application and for the convenience of understanding by those skilled in the art. The above-described solutions are not considered to be known to the person skilled in the art simply because they are set forth in the background section of the present application.

Disclosure of Invention

In order to ensure that the critical linewidth uniformity line edge roughness of small linewidth patterns is sufficient to meet product performance requirements, the smaller the linewidth, the lower the sensitivity of the electron beam photoresist needs to be used in direct writing of patterns. As a result, the smaller the line width pattern, the larger the amount of direct write exposure required. This means that the smaller the line width, the longer the write-through time is required without changing the current density. In order to improve the throughput per unit time of the electron beam writing apparatus, increasing the current density is a very effective method.

However, the electron source of a general multi-beam direct writing apparatus is composed of only one electron source unit, and a source electron beam emitted from a single electron source unit is split into a plurality (e.g., sometimes more than 10 ten thousand) direct writing electron beams. In order to increase the current density of the direct write beam, it is necessary to increase the total current of the source beam. The increase in total current of the source beam is difficult and the current density per write-through beam is very limited.

The inventors of the present application have found that in a semiconductor device, not every level of the structural pattern is fine, for example, some levels of the structural pattern are fine patterns requiring fine writing, and some levels of the structural pattern are non-fine patterns requiring relatively no finest conditions for writing. Further, even in the structural pattern of the same level, there are fine patterns and non-fine patterns. For patterns with larger area or low requirements on pattern linewidth uniformity and line edge roughness, if larger electron beam spots and larger current densities can be used for direct writing, the direct writing time can be greatly shortened. However, a general electron beam direct writing apparatus cannot easily achieve a large-scale switching of electron beam spots and current density while maintaining direct writing accuracy.

In order to solve the above-mentioned problems or at least similar problems, embodiments of the present application provide an electron beam writing apparatus and an electron beam writing method, which generate electron beams having beam spots of different areas using different electron source units, thereby ensuring the fineness of the electron beam writing and improving the speed of the electron beam writing.

An embodiment of the present application provides an electron beam direct writing device, including:

-an electron source (1) comprising a plurality of electron source modules (1-k), at least one of said electron source modules (1-k) comprising a plurality of electron source units (1-k-h), each of said electron source units generating a corresponding electron beam; and

a controller (3) for controlling said electron source to generate at least one of said electron beams,

wherein said plurality of electron source units of at least one of said electron source modules (1-k) comprises at least one first electron source unit and at least one second electron source unit,

the electron beam generated by each of the first electron source units corresponds to an electron beam having a first beam spot,

the electron beam generated by each of the second electron source units corresponds to an electron beam having a second beam spot,

the area of the first beam spot is more than 2 times of the area of the second beam spot.

In another embodiment, the electron source unit includes:

an electron emission structure for generating an electron beam;

and a dedicated circuit unit controlling a time at which the electron emission structure generates the electron beam and a current density of the electron beam based on an instruction of the controller.

In another embodiment, the current density of the electron beam having the first beam spot is greater than or equal to the current density of the electron beam having the second beam spot.

In another embodiment, the electron beam direct writing apparatus further includes:

an electron beam shaping mechanism that shapes the electron beam generated by the electron source unit to form the electron beam having the first beam spot and the electron beam having the second beam spot.

In another embodiment, the electron beam direct writing apparatus further includes:

a workpiece stage (7) for carrying a substrate (8), the workpiece stage being moved under the control of the controller.

In another embodiment, the controller processes the received graphic data to divide the graphic into more than two sub-areas and allocates at least one of the electron source modules to each sub-area; and

dividing at least one sub-region into a first pattern and a second pattern, distributing the first electron source unit in the electron source module for the first pattern, distributing the second electron source unit in the electron source module for the second pattern,

the line width of the first pattern is larger than that of the second pattern.

In another embodiment, the controller controls the first electron source unit and the second electron source unit to simultaneously generate electron beams to form the first pattern and the second pattern.

In another embodiment, an electron beam writing method is provided, the method performing electron beam writing using the electron beam writing apparatus of any of the above embodiments, the method comprising:

the controller processes the received graphic data to divide the graphic into more than two subareas, and allocates at least one electron source module for each subarea; and

dividing at least one sub-region into a first pattern and a second pattern, distributing the first electron source unit in the electron source module for the first pattern, distributing the second electron source unit in the electron source module for the second pattern,

the line width of the first pattern is larger than that of the second pattern.

In another embodiment, the method further comprises:

the controller controls the first electron source unit and the second electron source unit to generate electron beams for electron beam direct writing so as to form the first pattern and the second pattern.

In another embodiment, the controller controls the first electron source unit and the second electron source unit to generate the electron beam simultaneously.

The beneficial effects of this application lie in: the electron beam direct writing device generates electron beams with beam spots of different areas by using different electron source units, thereby ensuring the fineness of the electron beam direct writing and improving the speed of the electron beam direct writing.

Specific embodiments of the present application are disclosed in detail below with reference to the following description and drawings, indicating the manner in which the principles of the present application may be employed. It should be understood that the embodiments of the present application are not limited in scope thereby. The embodiments of the present application include many variations, modifications and equivalents within the spirit and scope of the appended claims.

Features that are described and/or illustrated with respect to one embodiment may be used in the same way or in a similar way in one or more other embodiments in combination with or instead of the features of the other embodiments.

It should be emphasized that the term "comprises/comprising" when used herein is taken to specify the presence of stated features, integers, steps or components but does not preclude the presence or addition of one or more other features, integers, steps or components.

Drawings

The accompanying drawings, which are included to provide a further understanding of the embodiments of the application and are incorporated in and constitute a part of this specification, illustrate embodiments of the application and together with the description serve to explain the principles of the application. It is apparent that the drawings in the following description are only some embodiments of the present application, and that other drawings may be obtained from these drawings without inventive effort for a person of ordinary skill in the art. In the drawings:

FIG. 1 is a schematic illustration of an electron source of an electron beam direct writing device of the present application;

FIG. 2 is a schematic view of the electron source modules 1-k;

FIG. 3 is a schematic diagram of a composition of the electron beam direct writing device of the present application;

FIG. 4 is a schematic diagram of an electron beam direct writing method according to an embodiment of the present application;

fig. 5 is a schematic diagram of the composition of an electron source module of the electron source 1.

Detailed Description

The foregoing and other features of the present application will become apparent from the following description, with reference to the accompanying drawings. In the specification and drawings, there have been specifically disclosed specific embodiments of the present application which are indicative of some of the embodiments in which the principles of the present application may be employed, it being understood that the present application is not limited to the described embodiments, but, on the contrary, the present application includes all modifications, variations and equivalents falling within the scope of the appended claims.

Example 1

Embodiment 1 of the present application provides an electron beam direct writing apparatus.

Fig. 1 is a schematic view of an electron source of an electron beam direct writing device of the present application. As shown in FIG. 1, the electron beam direct writing device comprises an electron source 1, wherein the electron source 1 comprises a plurality of independent electron source modules 1-k (k is more than or equal to 1 and less than or equal to n; n is more than or equal to 2;k and n is a positive integer).

Fig. 2 is a schematic view of the electron source module 1-k. As shown in FIG. 2, at least one electron source module 1-k of the present application comprises a plurality of independent electron source units 1-k-h (1.ltoreq.h.ltoreq.m; m.gtoreq. 2;h and m are both positive integers). The number of electron source units contained in each electron source module can be the same or different.

Fig. 3 is a schematic diagram of a composition of the electron beam writing apparatus of the present application. As shown in fig. 3, the electron beam writing apparatus of the present invention includes an electron source 1 and a controller 3 as shown in fig. 1. For simplicity of description, the electron source 1 in fig. 3 shows only the kth electron source module 1-k of the electron source 1. Each individual electron source unit 1-k-h in the electron source module 1-k may generate an initial electron beam 2-k-ha, which is capable of generating an incident electron beam 2-k-hb.

As shown in fig. 3, each electron source unit 1-k-h may comprise an electron emission structure 4-k-h for generating an initial electron beam 2-k-ha. The electron source unit 1-k-h may further comprise a dedicated circuit unit 5-k-h capable of controlling the time at which the electron emission structure 4-k-h generates the electron beam 2-k-ha and its current density in accordance with instructions of the controller 3.

The electron beam 2-k-ha is an initial electron beam generated by the electron source unit 1-k-h, and the electron beam 2-k-hb is an incident electron beam formed by shaping the initial electron beam 2-k-ha by the corresponding electron beam shaping mechanism 6-k-h. The shaping mechanism 6-k-h may comprise at least one of an anode, a collimator lens, a deflector and a focusing lens (not shown in the figures) for the electron beam; in addition, the shaping mechanism 6-k-h may also include other components. The incident electron beam 2-k-hb may direct write expose an electron beam resist 9 on the substrate 8. The substrate 8 is fixed on the stage 7, and the stage 7 is movable in the horizontal direction under the control of the controller 3.

In at least one electron source module 1-k, at least one electron source unit (such as 1-k-i, 1.ltoreq.i.ltoreq.m; i is a positive integer) is a large-beam spot sub-electron source unit (i.e., a first electron source unit) that can be used to form a large-beam spot electron beam (i.e., an electron beam having a first beam spot); at least one electron source unit 1-k-j (1.ltoreq.j.ltoreq.m, j.noteq.i; j is a positive integer) is a beamlet spot sub-electron source unit (i.e. a second electron source unit) that can form a beamlet spot electron beam (i.e. an electron beam having a second beam spot); the beam spot area of the large beam spot electron beam is more than 2 times of that of the small beam spot electron beam. In addition, the current density of the large beam spot electron beam may be substantially identical to the current density of the small beam spot electron beam; alternatively, the current density of the large beam spot electron beam is greater than that of the small beam spot electron beam, for example, the current density of the large beam spot electron beam is more than 2 times that of the small beam spot electron beam.

The beam spot of the electron beam as described herein refers to the shape of the electron beam projected on the surface of the electron beam resist 9, which is irradiated on the substrate 8 after the electron beam passes through the electron beam shaping mechanism.

In some examples, the number of electron source modules in electron source 1, n=1000; the number of electron source units contained in each electron source module is the same (e.g., m=200) or different; in each electron source module, 1 electron source unit is a big beam spot electron source unit, the other 199 electron source units are small beam spot electron source units, in addition, the big beam spot electron source units and the small beam spot electron source units can also be in other numbers, for example, the number of the big beam spot electron source units is larger than, equal to or smaller than the number of the small beam spot electron source units; in each electron source module, the electron source units are arranged in an array, wherein the electron source units with large beam spots can be uniformly distributed in the array, or the electron source units with large beam spots can be unevenly distributed, for example, the electron source units with large beam spots can be concentrated at the center position of the array or other positions.

In the present application, the electron emission structures 4-k-h may be nanocrystalline silicon field emission electron sources, as described in reference 1 (reference 1:Japanese Journal of Applied Physics 61,SD0807 (2022), https:// doi.org/10.35848/1347-4065/ac4ce 1), the electron emission structures of reference 1 are suitable for large-scale array multi-beam electron emission sources, because the current of each electron emission structure can be precisely controlled, and are more suitable for the formation of small-beam spot electron beams; alternatively, the electron emission structures 4-k-h may also be silicon field emission electron sources, as described in reference 2 (reference 2:IEEE Electron Device Letters,VOL.37,NO.1,JANUARY 2016,DOI:10.1109/led.2015.2499440); alternatively, the electron-emitting structure 4-k-h may be a gallium nitride field emission electron source as described in reference 3 (reference 3:2022IEEE International Electron Devices Meeting (IEDM), DOI: 10.1109/IEDM45625.2022.10019399). Both the silicon field emission electron source and the gallium nitride field emission electron source have the characteristic of providing larger current density, so the silicon field emission electron source and the gallium nitride field emission electron source can be used for forming large-beam spot electron beams.

For example, in the electron source module 1-k, the electron source unit 1-k-i is a silicon field emission electron source described in reference 2, and the remaining electron source units 1-k-j (j+.i) are nanocrystalline silicon field emission electron sources described in reference 1. The electron source units 1-k-i and 1-k-j may be integrated on the same substrate using semiconductor micromachining techniques, or may be integrated into one electron source module after being fabricated on different substrates, respectively.

The electron source units 1-k-h may comprise a plurality of large beam spot electron source units, as desired. The electron source units 1-k-h may comprise a plurality of beamlet electron source units, as desired.

Fig. 5 is a schematic view of the composition of one electron source module 1-k of the electron source 1. As shown in fig. 5, in at least one embodiment of the present application, the electron emission structures 4-k-i of the respective plural electron source units 1-k-i of one electron source module 1-k in the electron source 1 may be integrated on the first substrate 11 to form one electron source chip 101. For example, at least one electron emission structure 4-k-i is fabricated on one single chip, a plurality of electron emission structures 4-k-i corresponding to a plurality of single chips, the plurality of single chips being integrated onto the first substrate 11 using a bonding technique to form one electron source chip 101; alternatively, at least one electron emission structure 4-k-i (e.g., all of the electron emission structures 4-k-i) is formed on the first substrate 11 using the same manufacturing process (e.g., a plurality of electron emission structures 4-k-i are formed on a silicon substrate as the first substrate 11 using a microelectronic manufacturing process), thereby forming one electron source chip 101.

In at least one embodiment of the present application, the dedicated circuit units 5-k-i of each of the plurality of electron source units 1-k-i of one electron source module 1-k are integrated on the second substrate 12 to form one dedicated circuit chip 102. For example, at least one dedicated circuit unit 5-k-i is fabricated on a single chip, a plurality of dedicated circuit units 5-k-i corresponding to a plurality of single chips, the plurality of single chips being integrated onto the second substrate 12 using a bonding technique to form one dedicated circuit chip 102; alternatively, at least one dedicated circuit unit 5-k-i (e.g., all of the dedicated circuit units 5-k-i) is fabricated on the second substrate 12 using the same fabrication process (e.g., a plurality of dedicated circuit units 5-k-i are formed on a silicon substrate as the second substrate 12 using a microelectronic fabrication process), thereby forming one dedicated circuit chip 102.

The electron source chip 101 is electrically connected to the dedicated circuit chip 102, thereby electrically connecting the electron emission structures 4-k-i in the respective electron source units 1-k-i in the electron source module 1-k and the dedicated circuit units 5-k-i.

Further, the present application is not limited thereto, wherein the electron emission structure integrated on the first substrate 11 may be derived from more than two electron source modules, and the dedicated circuit unit integrated on the second substrate 12 may be derived from more than two electron source modules. For example, the electron emission structures of the respective plural electron source units of all the electron source modules 1 to k in the electron source 1 are integrated on the first substrate 11, and the dedicated circuit units of the respective plural electron source units of all the electron source modules 1 to k in the electron source 1 are integrated on the second substrate 12.

The first substrate 11 and the second substrate 12 may be semiconductor substrates (e.g., silicon substrates) or non-semiconductor substrates (e.g., glass substrates, etc.).

As shown in fig. 5, the electron source chip 101 and the dedicated circuit chip 102 may be electrically connected by wire bonding (wire bonding), thereby simplifying the process.

The present application is not limited thereto, and the electron source chip 101 and the dedicated circuit chip 102 may be electrically connected by means of substrate bonding. Wherein the electron source chip 101 and the dedicated circuit chip 102 are stacked in the thickness direction so as to perform substrate bonding between the first substrate 11 and the second substrate 12.

In some embodiments, the substrate bonding includes substrate bonding using bumps (bumps), for example, a surface or a back surface of at least one of the first substrate 11 and the second substrate 12 is provided with a plurality of conductive bumps, each bump being electrically connected to a corresponding electron emission structure 4-k-i or a dedicated circuit unit 5-k-i on the respective substrate, and mechanical and electrical connection of the first substrate 11 and the second substrate 12 is achieved by the bumps at the time of substrate bonding.

In some embodiments, substrate bonding may also include substrate bonding using through silicon vias (TSV: througi Silicon Via) and/or glass vias (TGV: througi Glass Via). For example, at least one of the first substrate 11 and the second substrate 12 is formed with a Through Silicon Via (TSV) or a glass via (TGV), and a conductive material is disposed in the TSV or the glass via, and both sides of the substrate are electrically connected by the conductive material. In this way, in the case of substrate bonding, electrical connection between the first substrate 11 and the second substrate 12 can be formed by, for example, bumps, and both side surfaces of the first substrate 11 and/or the second substrate 12 are electrically connected by a conductive material provided in a through-silicon via or a glass via.

In this application, the controller 3 may process the received graphics data to divide the graphics (for example, graphics that need direct writing) into two or more sub-areas, and allocate at least one electron source module to each sub-area, where the areas of the sub-areas may be the same or different. In one example, the areas of the sub-regions divided into are the same, e.g., each sub-region is a rectangle with a side length of 100-200 microns.

Further, the controller 3 may divide at least one sub-area into a non-fine pattern (i.e., a first pattern) and a fine pattern (i.e., a second pattern), calculate the time of pattern write-through and enable the speed of write-through to be increased while ensuring the write-through accuracy.

For example, the controller 3 may divide the pattern into a plurality of sub-regions, divide each sub-region into a first pattern and a second pattern (e.g., a line width of the first pattern is greater than a line width of the second pattern), allocate a first electron source unit to the first pattern, and allocate a second electron source unit to the second pattern. For another example, when the controller 3 determines that the throughput per unit time of the electron beam writing apparatus 100 can be improved by writing a non-fine pattern with a large beam spot electron beam in a certain sub-area, it is possible to control writing a non-fine pattern with a large beam spot electron beam and writing a fine pattern with a small beam spot electron beam.

In the present application, the controller 3 can control the timing and/or the duration of the generation of the electron beams by the first electron source unit and the second electron source unit, so as to perform direct-write exposure on the electron beam resist 9 to form the first pattern and the second pattern in the electron beam resist 9. For example, the first electron source unit and the second electron source unit generate electron beams simultaneously, or the first electron source unit and the second electron source unit generate electron beams sequentially, or the processes of generating electron beams by the first electron source unit and the second electron source unit at least partially overlap.

In the present application, the controller 3 may divide the direct writing process of the pattern into a plurality of batches. In the direct writing process of each batch, the plurality of electronic source modules respectively carry out direct writing on the corresponding subareas, the maximum direct writing range of each electronic source module is the same as the area of the corresponding subarea, and in addition, the plurality of electronic source modules can simultaneously carry out direct writing on the corresponding subareas, so that the direct writing speed is improved. After the write-through process of each batch, the write-through process of the next batch is started in the same manner as the write-through process of each batch. Such a batch write-through process continues until the graphics write-through of all sub-regions is completed.

In the present embodiment, the substrate 8 may be a wafer commonly used in the field of semiconductor manufacturing, such as a silicon wafer, a silicon on insulator (SOI: silicon On Insulator) wafer, a silicon germanium wafer, a germanium wafer or gallium nitride wafer, a silicon carbide (SiC) wafer, or the like, or may be an insulating wafer such as quartz, sapphire, glass, or the like. In addition, various thin films required for semiconductor devices, microelectromechanical system (MEMS) devices, and various configurations may be further provided on the surface of the substrate. The present embodiment is not limited thereto. The substrate 8 may also be a mask plate commonly used in the semiconductor manufacturing field.

According to embodiment 1 of the application, in the electron beam direct writing device, a fine pattern can be formed by using a small-beam-spot electron beam, and a non-fine pattern can be formed by using a large-beam-spot electron beam, so that the direct writing precision is ensured, the direct writing speed is improved, and the production capacity of the electron beam direct writing device per unit time is improved.

Example 2

Embodiment 2 of the present application provides an electron beam direct writing method that uses the electron beam direct writing apparatus 100 described in embodiment 1 to perform electron beam direct writing (i.e., without using a mask plate, patterns are directly formed in photoresist with an electron beam). Fig. 4 is a schematic diagram of an electron beam direct writing method according to an embodiment of the present application. As shown in fig. 4, the electron beam direct writing method includes:

an operation 201, the controller processes the received graphic data to divide the graphic into more than two subareas, and allocates at least one electron source module for each subarea;

an operation 202 of dividing at least one sub-region into a first pattern and a second pattern, allocating the first electron source unit in the electron source module to the first pattern, and allocating the second electron source unit in the electron source module to the second pattern; and

the controller controls the first electron source unit and the second electron source unit to generate electron beams for direct electron beam writing to form the first pattern and the second pattern in operation 203.

In operation 201, the controller 3 processes the graphics data to be written directly, divides the graphics to be written directly into two or more sub-areas, and does not allocate a corresponding electron source module to each sub-area. In addition, the controller 3 may divide the write-through process into one or more batches according to the specific shape of the pattern to be written-through, and set the sub-region to be written-through for each batch.

In operation 202, at least one sub-region (e.g., each sub-region) is divided into a non-fine pattern (i.e., a first pattern) and a fine pattern (i.e., a second pattern), the line width of the first pattern being greater than the line width of the second pattern.

In operation 203, the controller 3 controls the electron source 1 to perform direct writing of the pattern, and also controls the stage 7 to perform necessary scanning movement, that is, to perform a direct writing process. In the process of direct writing of the pattern, the fine pattern is directly written by a small beam spot electron source unit; in the case where the controller judges that the entire write-through time can be shortened, at least a part of the non-fine pattern is written by the large beam spot electron source unit. In the direct writing process, the small beam spot electron source unit and the large beam spot electron source unit can simultaneously perform direct writing.

Furthermore, as shown in fig. 4, the method may further include:

and 200, the controller receives the required direct-write graphic data and performs data processing.

For example, in operation 200, the controller 3 may receive graphic data, and perform necessary data processing thereon to identify the graphic data.

In this application, operations 202 and 203 may correspond to one batch of the write-through process, and operations 202 and 203 may be repeatedly performed, thereby completing the graphic write-through of all sub-regions through write-through of a plurality of batches.

According to embodiment 2 of the present application, a fine pattern is formed by using a small beam spot electron beam, and a non-fine pattern is formed by using a large beam spot electron beam, so that the speed of direct writing can be increased while ensuring the accuracy of direct writing, and the productivity per unit time of the electron beam direct writing apparatus can be improved.

The present application has been described in connection with specific embodiments, but it should be apparent to those skilled in the art that these descriptions are intended to be illustrative and not limiting. Various modifications and alterations of this application may occur to those skilled in the art in light of the spirit and principles of this application, and are to be seen as within the scope of this application.

Claims (10)

1. An electron beam direct writing device, characterized in that the electron beam direct writing device comprises:

-an electron source (1) comprising a plurality of electron source modules (1-k), at least one of said electron source modules (1-k) comprising a plurality of electron source units (1-k-h), each of said electron source units generating a corresponding electron beam; and

a controller (3) controlling the electron source to generate at least one of the electron beams;

wherein said plurality of electron source units of at least one of said electron source modules (1-k) comprises at least one first electron source unit and at least one second electron source unit,

the electron beam generated by each of the first electron source units corresponds to an electron beam having a first beam spot,

the electron beam generated by each of the second electron source units corresponds to an electron beam having a second beam spot,

the area of the first beam spot is more than 2 times of the area of the second beam spot.

2. The electron beam direct writing apparatus according to claim 1, wherein,

the electron source unit includes:

an electron emission structure for generating an electron beam;

and a dedicated circuit unit controlling a time at which the electron emission structure generates the electron beam and a current density of the electron beam based on an instruction of the controller.

3. The electron beam direct writing apparatus according to claim 1, wherein,

the current density of the electron beam having the first beam spot is greater than or equal to the current density of the electron beam having the second beam spot.

4. The electron beam direct writing apparatus according to claim 1, wherein,

the electron beam direct writing apparatus further includes:

an electron beam shaping mechanism that shapes the electron beam generated by the electron source unit to form the electron beam having the first beam spot and the electron beam having the second beam spot.

5. The electron beam direct writing apparatus according to claim 1, wherein,

the electron beam direct writing apparatus further includes:

a workpiece stage (7) for carrying a substrate (8), the workpiece stage being moved under the control of the controller.

6. The electron beam direct writing apparatus according to claim 1, wherein,

the controller processes the received graphic data to divide the graphic into more than two subareas, and allocates at least one electron source module for each subarea; and

dividing at least one sub-region into a first pattern and a second pattern, distributing the first electron source unit in the electron source module for the first pattern, distributing the second electron source unit in the electron source module for the second pattern,

the line width of the first pattern is larger than that of the second pattern.

7. The electron beam direct writing apparatus according to claim 6, wherein,

the controller controls the first electron source unit and the second electron source unit to simultaneously generate electron beams to form the first pattern and the second pattern.

8. An electron beam writing method, characterized in that the method performs electron beam writing using the electron beam writing apparatus according to any one of claims 1 to 7, the method comprising:

the controller processes the received graphic data to divide the graphic into more than two subareas, and allocates at least one electron source module for each subarea; and

dividing at least one sub-region into a first pattern and a second pattern, distributing the first electron source unit in the electron source module for the first pattern, distributing the second electron source unit in the electron source module for the second pattern,

the line width of the first pattern is larger than that of the second pattern.

9. The method of electron beam direct writing according to claim 8, wherein,

the method further comprises the steps of:

the controller controls the first electron source unit and the second electron source unit to generate electron beams for electron beam direct writing so as to form the first pattern and the second pattern.

10. The method of electron beam direct writing according to claim 8, wherein,

the controller controls the first electron source unit and the second electron source unit to simultaneously generate electron beams.