JPH09311208A - Aln reflection mirror - Google Patents

Aln reflection mirror

Info

Publication number
JPH09311208A
JPH09311208A JP8129407A JP12940796A JPH09311208A JP H09311208 A JPH09311208 A JP H09311208A JP 8129407 A JP8129407 A JP 8129407A JP 12940796 A JP12940796 A JP 12940796A JP H09311208 A JPH09311208 A JP H09311208A
Authority
JP
Japan
Prior art keywords
layer
thick film
aln
noble metal
reflecting mirror
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP8129407A
Other languages
Japanese (ja)
Inventor
Seiji Toyoda
誠司 豊田
Yoshio Kuromitsu
祥郎 黒光
Kunio Sugamura
邦夫 菅村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Materials Corp
Original Assignee
Mitsubishi Materials Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Materials Corp filed Critical Mitsubishi Materials Corp
Priority to JP8129407A priority Critical patent/JPH09311208A/en
Publication of JPH09311208A publication Critical patent/JPH09311208A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/40Solar thermal energy, e.g. solar towers

Abstract

PROBLEM TO BE SOLVED: To obtain an AlN reflection mirror having high heat resistance and thermal conductivity, excellent adhesion property between the base and a metal layer and good workability of the reflection face and improved productivity. SOLUTION: This AlN reflection mirror consists of an aluminum nitride sintered body base 11, an Al2 N3 layer 12 formed by heating and oxidizing the base body 11, and an SiO2 layer 13 formed on the Al2 O3 layer 12, and a noble metal thick film 14 formed on the SiO2 layer 13. The aluminum nitride sintered body contains preferably 0.1 to 10wt.% of one or two kinds of metal oxides selected from Y2 O3 and CaO. The Al2 O3 layer 12 is preferably formed to 0.2 to 20μm thickness and the SiO2 layer 13 is preferably formed to 0.01 to 10μm thickness. The surface roughness as the center line average roughness of the noble metal thick film 14 is preferably controlled to <0.2μm, and the noble metal thick film 14 preferably contains one or more kinds of metals selected from Au, Ag, Pd and Pt.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【発明の属する技術分野】本発明は、ハロゲンヒータの
ような赤外線ヒータから放射された赤外線を反射するの
に適し、半導体製造用集光器やレーザミラー等に使用可
能な高熱伝導性かつ耐熱性のAlN反射鏡に関するもの
である。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention is suitable for reflecting infrared rays emitted from an infrared heater such as a halogen heater, and has high thermal conductivity and heat resistance which can be used for a condenser for semiconductor manufacturing, a laser mirror and the like. The present invention relates to the AlN reflector.

【0002】[0002]

【従来の技術】従来、この種の反射鏡として、図4及び
図5に示すようにAlの押出し加工により上面が湾曲し
た凹面9aを有する基体9が形成され、この基体9の上
記凹面9aにめっき層4が形成されたAlを基体とする
反射鏡1が知られている。この反射鏡1では、基体9の
凹面9aをバフ研磨した後に、この凹面9aにNiめっ
き層4aが形成され、更にこのNiめっき層4a表面に
Auめっき層4bが形成される。このめっき層4の表面
である反射面1aの焦点近傍にはハロゲンヒータ6が設
置される。また図示しないが上記従来の反射鏡の基体に
Alに代えてCu合金を用いたことを除いて、上記従来
の反射鏡と同様に形成されたCu合金を基体とする反射
鏡が知られている。
2. Description of the Related Art Conventionally, as this type of reflecting mirror, a base 9 having a concave surface 9a whose upper surface is curved is formed by extrusion of Al as shown in FIGS. 4 and 5, and the concave surface 9a of the base 9 is formed. A reflecting mirror 1 having Al as a base on which a plated layer 4 is formed is known. In this reflecting mirror 1, after buffing the concave surface 9a of the base 9, a Ni plating layer 4a is formed on the concave surface 9a, and an Au plating layer 4b is formed on the surface of the Ni plating layer 4a. A halogen heater 6 is installed in the vicinity of the focal point of the reflecting surface 1a which is the surface of the plating layer 4. Further, although not shown, there is known a reflecting mirror based on a Cu alloy formed in the same manner as the above-mentioned conventional reflecting mirror, except that a Cu alloy is used instead of Al for the substrate of the conventional reflecting mirror. .

【0003】しかし、上記従来のAlを基体とする反射
鏡では、この反射鏡の使用中に基体の温度が上昇してA
lが粒成長し、これに伴って反射鏡の表面が荒れて反射
率が低下する問題点があった。また上記従来のCu合金
を基体とする反射鏡では、この反射鏡の大気中での使用
時に、基体の温度が上昇して基体の合金成分であるZn
等がめっき層中に拡散し、これに伴って反射鏡の表面荒
れや変色が生じて反射率が低下する問題点があった。更
に上記従来のCu合金を基体とする反射鏡では、この反
射鏡の水中での使用時に、基体であるCu合金が腐食
し、耐久性が低下する問題点もあった。これらの点を解
消するために、プレス成形等により湾曲面を有するAl
23又はAlNからなるセラミックス基体を作製し、そ
の湾曲面上に厚膜法により金属膜を形成した反射鏡が試
みられている。
However, in the conventional Al-based reflector, the temperature of the substrate rises during use of the reflector, and
There was a problem that the grains grew and the surface of the reflecting mirror was roughened and the reflectance was lowered. Further, in the above-mentioned conventional reflecting mirror using a Cu alloy as a base, when the reflecting mirror is used in the atmosphere, the temperature of the base increases and Zn, which is an alloy component of the base, is used.
And the like are diffused into the plating layer, and the surface roughness and discoloration of the reflecting mirror are caused along with this, resulting in a problem that the reflectance is reduced. Further, in the above-mentioned conventional reflecting mirror using a Cu alloy as a base, there is a problem that the Cu alloy as a base is corroded when the reflecting mirror is used in water, and durability is reduced. In order to eliminate these points, Al having a curved surface by press molding or the like
Attempts have been made for a reflecting mirror in which a ceramic substrate made of 2 O 3 or AlN is prepared and a metal film is formed on the curved surface by the thick film method.

【0004】[0004]

【発明が解決しようとする課題】しかし、Al23から
なる基体の反射鏡は熱伝導性が低い不具合があった。ま
た、AlNからなる基体の反射鏡はAl23より耐熱性
と熱伝導性が高いものの、厚膜の焼成時に厚膜中のガラ
ス成分とAlNが反応してNOxガスを生じ、これによ
り厚膜と基体の界面に気泡を発生して厚膜が膨れ、湾曲
面が荒れるとともに厚膜の密着性が低下する不具合があ
った。本発明の目的は、高い耐熱性及び熱伝導性を有
し、基体と金属層との密着性に優れたAlN反射鏡を提
供することにある。本発明の別の目的は、反射面の加工
性がよく生産性を向上できるAlN反射鏡を提供するこ
とにある。
However, the reflector of the substrate made of Al 2 O 3 has a problem that the thermal conductivity is low. Further, although the reflecting mirror of the substrate made of AlN has higher heat resistance and thermal conductivity than Al 2 O 3 , the glass component in the thick film and AlN react with each other during firing of the thick film to generate NO x gas. There are problems that bubbles are generated at the interface between the thick film and the substrate, the thick film swells, the curved surface becomes rough, and the adhesion of the thick film decreases. An object of the present invention is to provide an AlN reflecting mirror that has high heat resistance and thermal conductivity and is excellent in the adhesion between the substrate and the metal layer. Another object of the present invention is to provide an AlN reflecting mirror having a good workability of the reflecting surface and improving the productivity.

【0005】[0005]

【課題を解決するための手段】請求項1に係る発明は、
図1に示すように、窒化アルミニウム焼結体からなる基
体11と、基体11を熱酸化して基体11表面に形成さ
れたAl23層12と、このAl23層12上に設けら
れたSiO2層13と、このSiO2層13上に設けられ
た貴金属厚膜14とを備えたAlN反射鏡である。反射
鏡10において、AlN基体11上にAl23層12及
びSiO2層13が形成されているため、幅広い組成領
域のガラスとAlNとの反応を防止できる。即ち、Al
23層12とSiO2層13を形成したAlN基体11
上に厚膜ペーストを印刷、焼成した場合、厚膜中に含ま
れるガラス成分とAlN基体11との反応を防止するこ
とができ、基体11に対して貴金属厚膜14を強固に密
着させることができる。
The invention according to claim 1 is
As shown in FIG. 1, a base body 11 made of an aluminum nitride sintered body, an Al 2 O 3 layer 12 formed on the surface of the base body 11 by thermally oxidizing the base body 11, and provided on the Al 2 O 3 layer 12. This is an AlN reflecting mirror including the formed SiO 2 layer 13 and the noble metal thick film 14 provided on the SiO 2 layer 13. In the reflecting mirror 10, since the Al 2 O 3 layer 12 and the SiO 2 layer 13 are formed on the AlN substrate 11, it is possible to prevent the reaction between glass and AlN in a wide composition range. That is, Al
AlN substrate 11 on which 2 O 3 layer 12 and SiO 2 layer 13 are formed
When the thick film paste is printed and fired on the top, the reaction between the glass component contained in the thick film and the AlN substrate 11 can be prevented, and the noble metal thick film 14 can be firmly adhered to the substrate 11. it can.

【0006】請求項2に係る発明は、請求項1に係る発
明であって、窒化アルミニウム焼結体がY23及びCa
Oからなる群より選ばれた1種又は2種の金属酸化物を
0.1〜10重量%含有するAlN反射鏡である。Y2
3及びCaOを含有することにより窒化アルミニウム
の焼結性が向上する。この場合、含有率が0.1重量%
未満であると十分な焼結性を得ることができず、10重
量%を越えると基体自体の熱伝導性が低下する。請求項
3に係る発明は、請求項1又は2に係る発明であって、
Al23層12が0.2〜20μmであって、SiO2
層13が0.01〜10μmであるAlN反射鏡であ
る。Al23層12が0.2μm未満又はSiO2層1
3が0.01μm未満である場合には後述する貴金属ペ
ーストの焼成層の密着性が不足し、Al23層12が2
0μmを越える場合又はSiO2層13が10μmを越
える場合には基体自体の熱伝導性が低下する。
The invention according to claim 2 is the invention according to claim 1, wherein the aluminum nitride sintered body is Y 2 O 3 and Ca.
The AlN reflecting mirror contains 0.1 to 10% by weight of one or two kinds of metal oxides selected from the group consisting of O. Y 2
By containing O 3 and CaO, the sinterability of aluminum nitride is improved. In this case, the content rate is 0.1% by weight
If it is less than 10% by weight, sufficient sinterability cannot be obtained, and if it exceeds 10% by weight, the thermal conductivity of the substrate itself is lowered. The invention according to claim 3 is the invention according to claim 1 or 2,
The Al 2 O 3 layer 12 has a thickness of 0.2 to 20 μm, and SiO 2
The layer 13 is an AlN reflecting mirror having a thickness of 0.01 to 10 μm. Al 2 O 3 layer 12 is less than 0.2 μm or SiO 2 layer 1
If 3 is less than 0.01 μm, the adhesion of the firing layer of the noble metal paste described below is insufficient, and the Al 2 O 3 layer 12 has a thickness of 2
If it exceeds 0 μm or if the SiO 2 layer 13 exceeds 10 μm, the thermal conductivity of the substrate itself decreases.

【0007】請求項4に係る発明は、請求項1ないし3
いずれかに係る発明であって、貴金属厚膜14の表面粗
さが中心線平均粗さで0.2μm以下であるのAlN反
射鏡である。貴金属厚膜14の表面粗さが中心線平均粗
さで0.2μmを越えると赤外線の乱反射が起こり易く
なり、十分な反射率特性を得られない。請求項5に係る
発明は、請求項1ないし4いずれかに係る発明であっ
て、貴金属厚膜14がAu,Ag,Pd及びPtからな
る群より選ばれた1種又は2種以上の金属を含むAlN
反射鏡である。貴金属厚膜14がAu,Ag,Pd及び
Ptであれば大気中でかつ比較的低温で焼結することが
可能になる。
The invention according to claim 4 is the invention according to claims 1 to 3
It is an invention according to any one, and is an AlN reflecting mirror in which the surface roughness of the noble metal thick film 14 is 0.2 μm or less in terms of center line average roughness. If the surface roughness of the noble metal thick film 14 exceeds 0.2 μm in the center line average roughness, diffuse reflection of infrared rays is likely to occur and sufficient reflectance characteristics cannot be obtained. The invention according to claim 5 is the invention according to any one of claims 1 to 4, wherein the noble metal thick film 14 comprises one or more metals selected from the group consisting of Au, Ag, Pd and Pt. Including AlN
It is a reflector. If the noble metal thick film 14 is Au, Ag, Pd and Pt, it becomes possible to sinter in the air and at a relatively low temperature.

【0008】[0008]

【発明の実施の形態】次に本発明の実施の形態を図面に
基づいて詳しく説明する。図1〜図3に示すように、本
発明の基体11となる窒化アルミニウム焼結体は、窒化
アルミニウム単体のみからなる焼結体に限らず、窒化ア
ルミニウムを主成分とし、各種添加物、例えばCaO,
23等を含有する焼結体でもよい。この添加物を使用
する場合にはセラミック焼結助剤粉末としてY23又は
CaOを用い、その金属酸化物を0.1〜10重量%含
有することが好ましい。この基体11は図1に示すよう
に板状の基板でも、図3に示すようにバルク状でもよ
い。反射鏡10,20の二次曲線の焦点近傍にはハロゲ
ンヒータ18が設置される。また反射面は、図1及び図
3に示すように凹面でも、図示しないが、平面でもよ
い。図3に示すバルク状にあっては、所定形状の金型内
に粉末を充てんした後、圧力をかけて成形する、いわゆ
るプレス成型法や、粉末を分散媒体(媒液)に懸濁さ
せ、これを適当な解膠状態にして流動性をもった泥漿と
し、目的とする形状の鋳型に流し込んで成形する、いわ
ゆるスリップキャスティング法により形成することが好
ましい。
Embodiments of the present invention will now be described in detail with reference to the drawings. As shown in FIGS. 1 to 3, the aluminum nitride sintered body as the base body 11 of the present invention is not limited to a sintered body made of only aluminum nitride, but contains aluminum nitride as a main component and various additives such as CaO. ,
A sintered body containing Y 2 O 3 or the like may be used. When this additive is used, it is preferable to use Y 2 O 3 or CaO as the ceramic sintering aid powder and to contain the metal oxide in an amount of 0.1 to 10% by weight. The base 11 may be a plate-shaped substrate as shown in FIG. 1 or a bulk-shaped substrate as shown in FIG. A halogen heater 18 is installed near the focal points of the quadratic curves of the reflecting mirrors 10 and 20. Further, the reflecting surface may be a concave surface as shown in FIGS. 1 and 3, or may be a flat surface (not shown). In the bulk state shown in FIG. 3, after the powder is filled in a mold of a predetermined shape, pressure is applied for molding, that is, a so-called press molding method, or the powder is suspended in a dispersion medium (medium liquid). It is preferably formed by a so-called slip casting method in which it is deflocculated into a suitable state to obtain a sludge having a fluidity, which is poured into a mold having a desired shape to be molded.

【0009】基体上に設けられるAl23層12は、窒
化アルミニウム焼結体を1×10-2atm以上の酸素分
圧であってかつ1×10-3atm以下の水蒸気分圧の雰
囲気において、1100〜1500℃で3〜0.5時間
程度熱処理することにより作られる。温度を高くする
程、処理時間は短くてよい。この熱処理により窒化アル
ミニウム焼結体の表面が酸化されAl23層12が形成
される。この場合のAl23層12の厚さは0.2〜2
0μmであることが好ましい。
The Al 2 O 3 layer 12 provided on the substrate is an atmosphere in which the aluminum nitride sintered body has an oxygen partial pressure of 1 × 10 −2 atm or more and a water vapor partial pressure of 1 × 10 −3 atm or less. In, it is made by heat treatment at 1100 to 1500 ° C. for about 3 to 0.5 hours. The higher the temperature, the shorter the processing time may be. By this heat treatment, the surface of the aluminum nitride sintered body is oxidized and the Al 2 O 3 layer 12 is formed. In this case, the thickness of the Al 2 O 3 layer 12 is 0.2 to 2
It is preferably 0 μm.

【0010】次にこの反射鏡に設けられるSiO2層1
3は、ゾルゲル法により形成される。即ち、SiO2
13は上記熱酸化により作られたAl23層12上にS
iアルコキシド溶液を塗布し、加水分解と重合反応を行
い600〜1000℃で0.5〜3時間程度熱処理する
ことにより作られる。この場合のSiO2層13の厚さ
は0.01〜10μmであることが好ましい。図1の拡
大図に示すように、この反射鏡10では、焼結体からな
る基体11上にAl23層12を介して設けられたSi
2層13の上には更に貴金属厚膜14が形成される。
貴金属厚膜14の表面粗さは機械的研磨により中心線平
均粗さで0.2μm以下に形成される。また上記貴金属
厚膜14はAu,Ag,Pd及びPtからなる群より選
ばれた1種又は2種以上の金属を含む。
Next, the SiO 2 layer 1 provided on this reflecting mirror
3 is formed by the sol-gel method. That is, the SiO 2 layer 13 is formed on the Al 2 O 3 layer 12 formed by the thermal oxidation as described above.
It is prepared by applying an i-alkoxide solution, subjecting it to hydrolysis and a polymerization reaction, and performing heat treatment at 600 to 1000 ° C. for about 0.5 to 3 hours. In this case, the SiO 2 layer 13 preferably has a thickness of 0.01 to 10 μm. As shown in the enlarged view of FIG. 1, in this reflecting mirror 10, Si provided on a substrate 11 made of a sintered body with an Al 2 O 3 layer 12 interposed therebetween.
A noble metal thick film 14 is further formed on the O 2 layer 13.
The surface roughness of the noble metal thick film 14 is formed to have a center line average roughness of 0.2 μm or less by mechanical polishing. The noble metal thick film 14 contains one or more metals selected from the group consisting of Au, Ag, Pd and Pt.

【0011】貴金属厚膜14は厚膜法により形成され
る。即ち貴金属膜14は粒度が200メッシュ以上のA
u,Ag,Pd及びPtからなる群より選ばれた1種又
は2種以上の金属粉末及びガラス粉末にエチルセルロー
ス等の有機バインダとテレピネオール等の有機溶剤が添
加されたペーストをスクリーン印刷法等によりSiO2
層上に塗布し、大気中で70〜200℃に5〜30分間
保持して乾燥する。このガラス粉末としては、上記金属
粉末の溶融温度以下で軟化或いは溶融し、金属粉末や基
板本体と接着するものを使用する。例えば、SiO2
23−Bi23系やSiO2−B23−PbO系等の
酸化物系ガラスを用いることが好ましい。またペースト
中の金属粉末とガラス粉末との量比は、60重量%:4
0重量%から95重量%:5重量%の範囲にあることが
好ましい。上記範囲に限定したのは、金属粉末が60重
量%より少なくなると焼成後に得られる貴金属厚膜14
の赤外線反射率が低くなり、金属粉末が95重量%を越
えると厚膜の強度が低下するからである。
The noble metal thick film 14 is formed by a thick film method. That is, the noble metal film 14 has a grain size of 200 mesh or more.
A paste in which an organic binder such as ethyl cellulose and an organic solvent such as terpineol are added to one or more kinds of metal powders and glass powders selected from the group consisting of u, Ag, Pd and Pt by a screen printing method, etc. 2
It is coated on the layer and kept at 70 to 200 ° C. for 5 to 30 minutes in the atmosphere to be dried. As the glass powder, one that softens or melts at a temperature equal to or lower than the melting temperature of the metal powder and adheres to the metal powder or the substrate body is used. For example, SiO 2
It is preferable to use oxide glass such as B 2 O 3 —Bi 2 O 3 system or SiO 2 —B 2 O 3 —PbO system. The amount ratio of metal powder and glass powder in the paste was 60% by weight: 4
It is preferably in the range of 0% by weight to 95% by weight: 5% by weight. The range is limited to the noble metal thick film 14 obtained after firing when the metal powder is less than 60% by weight.
This is because the infrared reflectance becomes low, and if the metal powder exceeds 95% by weight, the strength of the thick film decreases.

【0012】上記ペースト乾燥後、所定の雰囲気中で5
00〜1000℃に5〜30分間保持することにより、
上記ペーストを焼成して、SiO2層13上に膜厚が5
〜50μmの貴金属厚膜14が形成される。SiO2
13上の貴金属厚膜14は、一般的な金属の研磨方法に
より研磨される。粒度が40〜1500メッシュの砥粒
を所定の接着剤により研磨布に固着し、水溶性の研削液
を注ぎながら、上記研磨布を基板本体上の貴金属厚膜表
面に均一に所定の圧力で押付け、500〜2000m/
分の速度で移動させることにより、貴金属厚膜表面を研
磨する。砥粒としてはAl23,SiC,ガーネット,
ダイヤモンド等の微粒子が用いられ、接着剤としては膠
やレジン等の接着剤が用いられ、更に研磨布としてはク
ラフト紙やナイロン繊維の不織布等により形成されたシ
ートが用いられる。この研磨により貴金属厚膜の表面粗
さを中心線平均粗さで0.2μm以下にすることが好ま
しい。
After the above paste is dried, 5 in a predetermined atmosphere
By holding at 00 to 1000 ° C for 5 to 30 minutes,
The above paste is fired to form a film with a thickness of 5 on the SiO 2 layer 13.
A noble metal thick film 14 of about 50 μm is formed. The noble metal thick film 14 on the SiO 2 layer 13 is polished by a general metal polishing method. Abrasive particles having a particle size of 40 to 1500 mesh are fixed to a polishing cloth with a predetermined adhesive, and the polishing cloth is pressed against the surface of the noble metal thick film on the substrate body with a predetermined pressure while pouring a water-soluble grinding liquid. , 500-2000m /
The noble metal thick film surface is polished by moving at a speed of a minute. As abrasive grains, Al 2 O 3 , SiC, garnet,
Fine particles such as diamond are used, an adhesive such as glue or resin is used as the adhesive, and a sheet formed of kraft paper or a nonwoven fabric of nylon fiber is used as the polishing cloth. The surface roughness of the noble metal thick film is preferably 0.2 μm or less in terms of center line average roughness by this polishing.

【0013】[0013]

【実施例】次に本発明の実施例を説明する。 <実施例1〜9>図1に示す反射鏡10を次の方法によ
り製造した。先ず凹面を有する窒化アルミニウム焼結基
板を9枚用意し、それぞれ大気中、1300℃で熱処理
時間を変えて焼結基板の表面にそれぞれ0.2μm、
4.1μm及び19.4μmの厚さのAl23層12を
それぞれ3枚ずつ形成した。次にこのAl23層12を
形成した窒化アルミニウム焼結基板11をエチルシリケ
ート348g、イソプロピルアルコール92g、エタノ
ール500g、0.3%HCl水溶液60gの割合に混
合した液にディップコーティングした後、大気雰囲気
中、900℃で1時間焼成してSiO2層13を形成し
た。Al23層12とSiO2層13との厚さの関係を
表1に示す。
Next, embodiments of the present invention will be described. <Examples 1 to 9> The reflecting mirror 10 shown in FIG. 1 was manufactured by the following method. First, nine aluminum nitride sintered substrates each having a concave surface were prepared, and the heat treatment time was changed at 1300 ° C. in the atmosphere, and the surface of each sintered substrate was changed to 0.2 μm.
Three Al 2 O 3 layers 12 each having a thickness of 4.1 μm and a thickness of 19.4 μm were formed. Next, the aluminum nitride sintered substrate 11 on which the Al 2 O 3 layer 12 is formed is dip-coated with a liquid obtained by mixing 348 g of ethyl silicate, 92 g of isopropyl alcohol, 500 g of ethanol, and 60 g of a 0.3% HCl aqueous solution, and then air. The SiO 2 layer 13 was formed by firing at 900 ° C. for 1 hour in the atmosphere. Table 1 shows the thickness relationship between the Al 2 O 3 layer 12 and the SiO 2 layer 13.

【0014】このSiO2層13上に貴金属厚膜である
Au厚膜14を形成した。このAu厚膜14の形成を以
下に述べる。先ず粒度が325メッシュ以上のAu粉末
を80g、SiO2−B23−PbO系ガラス粉末を2
0g、エチルセルロースを1.5g、テレピネオールを
20gの量比で混合・混練されたペーストを準備した。
上記ペーストをスクリーン印刷法によりSiO2層上に
塗布し、大気雰囲気中150℃に10分間保持して乾燥
後、大気雰囲気中で850℃に10分間保持することに
より、上記ペーストを焼成して、Al23基板11上に
膜厚が20μmのAu厚膜14を形成した。焼成後のA
u厚膜14に、粒度が600メッシュのAl23微粒子
を接着剤により接着したナイロン繊維の不織布シートか
らなる研磨布を密着させ、この研磨布をAl23基板1
1に対して600m/分の速度で移動させて、Au厚膜
14表面の研磨を行った。研磨量はAu厚膜14の膜厚
減少量で4μmであった。このようにして製造されたそ
れぞれの反射鏡10を実施例1〜9とした。
An Au thick film 14, which is a noble metal thick film, was formed on the SiO 2 layer 13. The formation of the Au thick film 14 will be described below. First, 80 g of Au powder having a particle size of 325 mesh or more and 2 g of SiO 2 —B 2 O 3 —PbO glass powder were used.
A paste was prepared by mixing and kneading 0 g, ethyl cellulose 1.5 g, and terpineol 20 g in a weight ratio.
The paste is applied onto the SiO 2 layer by a screen printing method, kept at 150 ° C. for 10 minutes in the air atmosphere to dry, and then kept at 850 ° C. for 10 minutes in the air atmosphere to burn the paste, An Au thick film 14 having a film thickness of 20 μm was formed on the Al 2 O 3 substrate 11. A after firing
To the u thick film 14, a polishing cloth made of a nonwoven fabric sheet of nylon fiber in which Al 2 O 3 fine particles having a grain size of 600 mesh are adhered with an adhesive is brought into close contact, and this polishing cloth is used as the Al 2 O 3 substrate 1
1 was moved at a speed of 600 m / min to polish the surface of the Au thick film 14. The polishing amount was 4 μm in terms of the amount of reduction in the thickness of the Au thick film 14. The respective reflecting mirrors 10 manufactured in this manner are referred to as Examples 1 to 9.

【0015】<比較例1>実施例1と同一の凹面を有す
る窒化アルミニウム焼結基板を熱処理せずに、その基板
表面に直接実施例1と同様の方法によりAu薄膜を形成
し、実施例1と同様に研磨仕上げを行った。このように
して製造された反射鏡を比較例1とした。 <比較例2〜4>実施例1と同一の凹面を有する窒化ア
ルミニウム焼結基板を実施例1と同様に熱処理を行いA
23層を形成した後SiO2層を設けずに、そのAl2
3層表面に実施例1と同様の方法によりAu薄膜を形
成し、実施例1と同様に研磨仕上げを行った。このよう
にして製造された反射鏡を比較例2〜4とした。 <比較例5〜7>実施例1と同一の凹面を有する窒化ア
ルミニウム焼結基板を熱処理せずに実施例1と同様にS
iO2層を形成した。そのSiO2層表面に実施例1と同
様の方法によりAu薄膜を形成し、実施例1と同様に研
磨仕上げを行った。このようにして製造された反射鏡を
比較例5〜7とした。
Comparative Example 1 An aluminum thin film having the same concave surface as in Example 1 was not heat-treated, but an Au thin film was formed directly on the surface of the substrate by the same method as in Example 1, and Example 1 was used. Polishing was performed in the same manner as in. The reflecting mirror manufactured in this manner was used as Comparative Example 1. <Comparative Examples 2 to 4> The aluminum nitride sintered substrate having the same concave surface as in Example 1 was heat-treated in the same manner as in Example 1 to give A.
After forming the l 2 O 3 layer without providing the SiO 2 layer, the Al 2
An Au thin film was formed on the surface of the O 3 layer by the same method as in Example 1, and polishing finishing was performed in the same manner as in Example 1. The reflecting mirrors manufactured in this manner are Comparative Examples 2 to 4. <Comparative Examples 5 to 7> The aluminum nitride sintered substrate having the same concave surface as in Example 1 was subjected to the same S as in Example 1 without heat treatment.
An iO 2 layer was formed. An Au thin film was formed on the surface of the SiO 2 layer by the same method as in Example 1, and polishing finishing was performed in the same manner as in Example 1. The reflecting mirrors manufactured in this manner are Comparative Examples 5 to 7.

【0016】<比較試験と評価>実施例1〜9及び比較
例1〜7の反射鏡について、それぞれ赤外線の反射率と
基板に対するAu厚膜の密着性を比較試験した。その結
果を表1に示す。反射率は基板上のAu厚膜に対して波
長2.5μmの赤外線を照射したときの赤外線の全反射
率を測定することにより求め、また、基板に対するAu
薄膜の密着性はAu薄膜を形成した基板を大気中、50
0℃で100時間、エージング処理する前及びその後に
Au薄膜のピーリング(引き剥がし)試験を行い、その
剥離箇所又は破壊箇所により判断した。
<Comparative Test and Evaluation> With respect to the reflecting mirrors of Examples 1 to 9 and Comparative Examples 1 to 7, the infrared reflectance and the adhesion of the Au thick film to the substrate were comparatively tested. Table 1 shows the results. The reflectance is obtained by measuring the total reflectance of infrared rays when the Au thick film on the substrate is irradiated with infrared rays having a wavelength of 2.5 μm.
The adhesion of the thin film is 50
The Au thin film was subjected to a peeling test at 0 ° C. for 100 hours before and after the aging treatment, and the peeled portion or the broken portion was judged.

【0017】[0017]

【表1】 [Table 1]

【0018】表1から明らかなように、比較例1では赤
外線反射率が約80%と低く、Au厚膜の密着性におい
ても低い値を示した。また、比較例2〜4及び比較例5
〜7においては反射率が比較例1より向上したが、Au
厚膜の密着性においては依然として低い値を示した。こ
れに対して、実施例1〜9では90%以上の高い反射率
を維持し、Au厚膜の密着性においても比較例1〜7に
比較していずれも高い値を示した。また窒化アルミニウ
ム焼結基板に直接Au薄膜を形成した比較例1では、A
u薄膜の表面に多数の気泡が目視により確認することも
できたのに対して、実施例ではAu薄膜に変化がなく、
高い反射率を示すことが判った。
As is clear from Table 1, in Comparative Example 1, the infrared reflectance was as low as about 80%, and the adhesion of the Au thick film was also low. Moreover, Comparative Examples 2 to 4 and Comparative Example 5
7 to 7, the reflectance was improved as compared with Comparative Example 1, but Au
The adhesion of the thick film was still low. On the other hand, in Examples 1 to 9, a high reflectance of 90% or more was maintained, and the adhesion of the Au thick film also showed a high value as compared with Comparative Examples 1 to 7. In Comparative Example 1 in which the Au thin film was directly formed on the aluminum nitride sintered substrate,
While it was possible to visually confirm a large number of bubbles on the surface of the u thin film, in the example, there was no change in the Au thin film,
It was found to show a high reflectance.

【0019】[0019]

【発明の効果】以上述べたように、本発明によれば、窒
化アルミニウム焼結体からなる基体上に熱酸化により形
成されたAl23層を介して設けられたSiO2層上に
反射面となる貴金属厚膜を設けるので、焼結体に対する
密着力の高い貴金属厚膜を形成できる。この結果、高い
耐熱性及び熱伝導性を有し、基体と金属層との密着性に
優れたAlN反射鏡を得ることができる。また、SiO
2層上に反射面となる貴金属厚膜を設けるので、基体の
表面粗さが大きくても、貴金属厚膜自体がこれを平坦化
し、貴金属厚膜の表面を歪みのない鏡面とする。更に反
射率を向上させる場合であっても、研磨は基体である窒
化アルミニウム焼結体の研磨を必要とせず、貴金属厚膜
の表面を研磨して反射率を向上させることができる。
As described above, according to the present invention, the reflection on the SiO 2 layer provided through the Al 2 O 3 layer formed by thermal oxidation on the substrate made of the aluminum nitride sintered body is reflected. Since the noble metal thick film serving as the surface is provided, the noble metal thick film having high adhesion to the sintered body can be formed. As a result, it is possible to obtain an AlN reflecting mirror having high heat resistance and thermal conductivity and having excellent adhesion between the base and the metal layer. In addition, SiO
Since the noble metal thick film serving as the reflecting surface is provided on the two layers, even if the surface roughness of the substrate is large, the noble metal thick film itself flattens it and the surface of the noble metal thick film becomes a mirror surface without distortion. Even when the reflectance is further improved, the polishing does not require polishing of the aluminum nitride sintered body which is the base, and the surface of the noble metal thick film can be polished to improve the reflectance.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の反射鏡の断面図。FIG. 1 is a sectional view of a reflecting mirror of the present invention.

【図2】その斜視図。FIG. 2 is a perspective view thereof.

【図3】本発明の別の反射鏡の断面図。FIG. 3 is a sectional view of another reflecting mirror of the present invention.

【図4】従来例の反射鏡を示す図5のB−B線断面図。FIG. 4 is a cross-sectional view taken along the line BB of FIG. 5 showing a reflecting mirror of a conventional example.

【図5】その従来例の反射鏡を含む要部斜視図。FIG. 5 is a perspective view of a main part including a reflecting mirror of the conventional example.

【符号の説明】[Explanation of symbols]

10,20 反射鏡 11 基体 12 Al23層 13 SiO2層 14 貴金属厚膜10, 20 Reflector 11 Base 12 Al 2 O 3 layer 13 SiO 2 layer 14 Noble metal thick film

Claims (5)

【特許請求の範囲】[Claims] 【請求項1】 窒化アルミニウム焼結体からなる基体(1
1)と、前記基体(11)を熱酸化して前記基体(11)表面に形
成されたAl23層(12)と、前記Al23層(12)上に設
けられたSiO2層(13)と、前記SiO2層(13)上に設け
られた貴金属厚膜(14)とを備えたAlN反射鏡。
1. A base (1) made of an aluminum nitride sintered body.
1), an Al 2 O 3 layer (12) formed on the surface of the substrate (11) by thermally oxidizing the substrate (11), and a SiO 2 layer provided on the Al 2 O 3 layer (12). An AlN reflecting mirror comprising a layer (13) and a noble metal thick film (14) provided on the SiO 2 layer (13).
【請求項2】 窒化アルミニウム焼結体がY23及びC
aOからなる群より選ばれた1種又は2種の金属酸化物
を0.1〜10重量%含有する請求項1記載のAlN反
射鏡。
2. The aluminum nitride sintered body is Y 2 O 3 and C.
The AlN reflecting mirror according to claim 1, which contains 0.1 to 10% by weight of one or two kinds of metal oxides selected from the group consisting of aO.
【請求項3】 Al23層(12)が0.2〜20μmであ
って、SiO2層(13)が0.01〜10μmである請求
項1又は2記載のAlN反射鏡。
3. The AlN reflecting mirror according to claim 1, wherein the Al 2 O 3 layer (12) has a thickness of 0.2 to 20 μm and the SiO 2 layer (13) has a thickness of 0.01 to 10 μm.
【請求項4】 貴金属厚膜(14)の表面粗さが中心線平均
粗さで0.2μm以下である請求項1ないし3いずれか
記載のAlN反射鏡。
4. The AlN reflecting mirror according to claim 1, wherein the noble metal thick film (14) has a surface roughness of 0.2 μm or less in terms of center line average roughness.
【請求項5】 貴金属膜(14)がAu,Ag,Pd及びP
tからなる群より選ばれた1種又は2種以上の金属を含
む請求項1ないし4いずれか記載のAlN反射鏡。
5. The noble metal film (14) comprises Au, Ag, Pd and P.
The AlN reflecting mirror according to any one of claims 1 to 4, which contains one or more metals selected from the group consisting of t.
JP8129407A 1996-05-24 1996-05-24 Aln reflection mirror Withdrawn JPH09311208A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8129407A JPH09311208A (en) 1996-05-24 1996-05-24 Aln reflection mirror

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8129407A JPH09311208A (en) 1996-05-24 1996-05-24 Aln reflection mirror

Publications (1)

Publication Number Publication Date
JPH09311208A true JPH09311208A (en) 1997-12-02

Family

ID=15008791

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8129407A Withdrawn JPH09311208A (en) 1996-05-24 1996-05-24 Aln reflection mirror

Country Status (1)

Country Link
JP (1) JPH09311208A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100496363B1 (en) * 2001-04-13 2005-06-21 가부시키가이샤 히타치세이사쿠쇼 Light source for projection device and projection type image display device using the same
WO2007145234A1 (en) * 2006-06-13 2007-12-21 Teitokusha Co., Ltd. Reflector, method for manufacturing the reflector, and heater unit and furnace using the reflector
WO2009001725A1 (en) * 2007-06-28 2008-12-31 Sharp Kabushiki Kaisha Backlight device, liquid crystal display device and illuminating device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100496363B1 (en) * 2001-04-13 2005-06-21 가부시키가이샤 히타치세이사쿠쇼 Light source for projection device and projection type image display device using the same
WO2007145234A1 (en) * 2006-06-13 2007-12-21 Teitokusha Co., Ltd. Reflector, method for manufacturing the reflector, and heater unit and furnace using the reflector
JPWO2007145234A1 (en) * 2006-06-13 2009-11-05 貞徳舎株式会社 Reflector, manufacturing method thereof, heater unit and furnace using the same
JP4681051B2 (en) * 2006-06-13 2011-05-11 貞徳舎株式会社 Reflector, manufacturing method thereof, heater unit and furnace using the same
WO2009001725A1 (en) * 2007-06-28 2008-12-31 Sharp Kabushiki Kaisha Backlight device, liquid crystal display device and illuminating device
US8300177B2 (en) 2007-06-28 2012-10-30 Sharp Kabushiki Kaisha Backlight device, liquid crystal display device and illuminating device

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