JPH09307055A - Dam bar-free lead frame member - Google Patents

Abstract

PROBLEM TO BE SOLVED: To prevent the crack and peel of an insulation resin by setting the resin of a mold clamp on the lead of a dam bar to a specified thickness or less and that of a bent part on the lead to a specified thickness or more. SOLUTION: The dam bar-free lead frame member is an insulation resin-made dam bar 120 for a dam bar-free lead frame 110 having no formed dam bar. The bar 120 is disposed inside a package line 150 and outside a bending position. The resin of a mold clamp 160 on the lead is set to a thickness T1 of 10μm or less and that of a bent part 170 on the lead is set to a thickness T2 of 30μm or more. This is enough to prevent the crack and peel of the insulation resin.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a lead frame member which is an assembly member of a resin-encapsulated semiconductor device.
In particular, it relates to a dam bar free lead frame member in which the dam bar is made of resin.

[0002]

2. Description of the Related Art Conventionally, resin-encapsulated semiconductor devices (plastic-encapsulated packages) used in electronic control devices and the like.
11 has a structure as shown in FIG. 11, and using a lead frame with a dam bar, (a) a semiconductor element such as an LSI is simply attached to a die pad portion of the lead frame as a die bonding material such as silver paste. Mounting, and electrically connecting the electrodes of the semiconductor element and the lead frame by wire bonding, (b) resin-sealing the semiconductor element and the lead frame with resin, and then resin-sealing A step of removing resin burrs, which is the protrusion of the sealing resin, that sometimes occurs by a method such as water jet or sandblasting, (c) Furthermore, a dam bar for stopping the protrusion of the resin formed between the outer leads of the lead frame is provided. Step of punching and removing with punch, (d) After that, the outer lead portion of the lead frame is processed into a predetermined shape with a mold Step, etc. have been produced through a.

A lead frame with a dam bar used for manufacturing the resin-sealed semiconductor device (plastic-sealed package) is as shown in FIG.
Generally, an inner lead portion 1001 electrically connected to an electrode portion of a semiconductor element, an outer lead portion 1002 electrically connected to an external circuit, a die pad portion 1003 on which a semiconductor element is mounted, and a mold die press. Dam bar 1004 for stopping the flow of resin during resin sealing by
And the frame 1006 and the like necessary for assembling the semiconductor device. A copper alloy or a 42% nickel-iron alloy is used as a material for such a lead frame with a dam bar 1000, and the lead frame with a dam bar 1000 itself is manufactured by a punching method using a die press or a photolithography technique. It was carried out by an etching method using a corrosive liquid. However, the above-mentioned lead frame has a structure in which a dam bar is provided when manufacturing a resin-sealed semiconductor device, and when this is used to perform resin sealing, resin burrs are inevitable.

In recent years, with the trend toward lighter and thinner electronic devices and higher integration of semiconductor elements, resin-encapsulated semiconductor devices have been significantly reduced in size and thickness and increased in electrode terminals. Encapsulated semiconductor devices, particularly QFP (Quad F
Lat Package) and TQFP (Thin Q
In a package having a remarkable increase in the number of pins, such as a flat flat package, the pitch of outer leads, which are electrode terminals, is 0.65 mm pitch and has recently become 0.5 to 0.3.
The pitch was being narrowed down to the mm pitch. The narrow pitch of the outer leads has made it very difficult to remove the dam bar of the plastic sealed package. In other words, as the outer lead pitch becomes narrower, the punch for punching the dam bar must also be made thinner, which increases the manufacturing cost of the punch and the occurrence of chipping of the punch that occurs when removing the dam bar. Was causing a shorter life. For example, 0.3
When cutting the outer lead dam bar with a pitch of mm, the punch thickness needs to be as thin as about 0.1 mm.
The strength of the punch is reduced and its manufacture is necessarily more difficult. In addition, the protruding position of the outer lead may shift due to the shrinkage of the resin in the plastic package, and a certain processing accuracy is required at the time of dam bar cutting, but if the pitch is narrow, it is allowed in the dam bar cutting process. There is also a problem in that the allowable amount of deviation is reduced and the occurrence of defects in the dam bar removal process increases. As described above, various problems have been caused by the effects of the multi-pin package and the narrow pitch of the package, and the method of removing the dam bar by the punch itself has become extremely difficult.

As a solution to these problems, a dam bar-free lead frame member has been proposed in which a dam bar-free lead frame is used and the dam bar portion is made of an insulating resin. Here, a lead frame without a dam bar is referred to as a dam bar free lead frame, but may also be referred to as a dam barless lead frame. This method uses an outer lead 91 as shown in FIGS.
As shown in FIG.
As shown in (a) and (b), a dam bar 920 made of an insulating resin is provided around the mold line 917, but the dam bar portion 920 is usually formed in the process shown in FIG. . In the case of a dam bar-free lead frame member in which the dam bar portion is formed of an insulating resin, the dam bar 920 at the time of resin sealing is formed of an insulating resin. In addition, the step of punching the dam bar with a punch after resin sealing is not required, which is very effective for narrowing the pitch of the outer leads 913. Also, in the case of a dam bar-free lead frame member in which the dam bar portion is formed of an insulating resin, the insulating resin is thinly applied to the leads during the manufacturing process. 1
It was set to 0 μm or less. As shown in FIGS. 9A and 9A, the dam bar free lead frame used in this dam bar free lead frame member does not have a dam bar made of a lead frame material in the outer lead portion. . FIG. 9B is a diagram showing a case of a lead frame with a dam bar, in which a dam bar 914 made of a lead frame material is formed at the time of external processing of the lead frame. It is given to make the difference from the lead frame easier to understand.

The process shown in FIG. 8 will be briefly described below. First, the dam bar free lead frame 800 (Fig. 8
A paste-like insulating resin 820 is applied by a dispenser 810 to a predetermined position including the package line of (a). (FIG. 8B) Next, after drying in the drying furnace 830 (FIG. 8C),
The insulating resin 820 was embedded between the outer leads 802 by the press die 840 to form the dam bar portion. (FIG. 8D) When a thermosetting resin is used as the insulating resin 820, the insulating resin 820 is hot-pressed and embedded between the leads, and then heat-cured in a curing furnace to form a dam bar. Was. (FIG. 8 (e)) After this, down-setting processing was performed as needed. (FIG. 8 (f)) In this way, the insulating resin 820 is applied to the dam bar free lead frame 800 by a dispensing method in a predetermined region across the package with a width of about 0.5 mm,
After drying, the insulating resin 820 in a softened state was filled between the leads by hot pressing. In the case of the process shown in FIG. 8, the insulating resin 820 is applied thinly on the leads as well, but the thickness of the insulating resin 820 on the leads is set to 10 μm or less to form the dam bar. A thermoplastic resin can also be used as the insulating resin. Also when a thermoplastic resin is used, the insulating resin is hot-pressed and filled between the leads.

[0007]

However, since the liquid insulating resin (paste) is applied to the dam bar formed in this way, surface tension is generated on the lead surface, resulting in a corrugated shape, which causes the package line and It was difficult to accurately form a dam bar made of an insulating resin in a constant shape between the bent portion and the bent portion. Therefore, if the width of the dam bar is narrowed, the dam bar made of an insulating resin may be inside the package, which causes a problem of mold resin (sealing resin) leakage. On the other hand, if the width of the dam bar is widened, the dam bar made of insulating resin will be located in the bending part, and the bending process will cause cracking of the insulating resin and peeling of the insulating resin. There was a problem of getting dirty. Under the circumstances, the present invention provides a resin-sealing method in which a dam bar made of an organic insulating resin is formed and package-resin-sealed in order to cope with a semiconductor device having a large number of pins and a narrow pitch. A dambar-free leadframe member used for a semiconductor device of the type is to provide a dambar-free leadframe member that can solve the above problems.

[0008]

DISCLOSURE OF THE INVENTION A dam-bar-free lead frame member of the present invention is a resin-encapsulated semiconductor device in which a dam-bar is formed of an insulating resin for a dam-bar-free lead frame which does not have a contour-processed dam-bar. Dam bar free lead frame member for use in dams, which is made of insulating resin, is located on the outside of the bending position from the position inside the package line, and the thickness of the resin on the leads of the mold clamp part. Is 10 μm or less, and the thickness of the resin on the lead of the bent portion is 30 μm.
m or more. The dam bar is made of a thermosetting resin, and the thermosetting resin has a normal temperature tensile elastic modulus of 3.0 × 10 ⁹ d before molding.
Tensile elastic modulus at mold temperature after die bonding and wire bonding of 1.0 × 10 or less at yne / cm ² or less
^{It is 8} dynes / cm ² or more, and the room temperature tensile elongation percentage after mold curing is 50% or more. Further, in the above description, the anisotropic conductive resin is provided in a band shape so as to straddle the outer lead at the joint portion of the outer lead with the substrate. Here, the position inside the package line means the sealing resin side when manufacturing the semiconductor device, and the position outside the bending position means bending the outer lead portion when manufacturing the semiconductor device. However, it means the outer lead tip side which is not the package side from this bending position. This bending process is also called forming process. Further, here, the entire insulating resin for forming the dam bar is referred to as a dam bar, and the mold clamp portion means that the insulating resin is present at a position corresponding to the mold clamp portion at the time of resin sealing. In the area. Also,
As described above, here, the lead frame having no dambar is referred to as a dambar-free leadframe, but it may be referred to as a dambarless leadframe.

[0009]

The dam bar free lead frame member of the present invention has such a structure, and therefore, due to the poor shape and positional accuracy of the dam bar in the conventional dam bar free lead frame member when the width of the dam bar is narrow. When mounting due to the problem of mold resin leakage or cracking of the insulating resin or peeling of the insulating resin at the bent part when the dam bar is made wider and the dam bar made of insulating resin is provided up to the bent part. It is supposed to be able to solve the problem of substrate contamination. That is, it is possible to provide a dam bar-free lead frame member that is not affected by the shape and positional accuracy of the dam bar at the dam bar formation location and that can also be bent. As a result, the multi-pin semiconductor device,
It is supposed to be able to cope with narrow pitches without problems. Specifically, the dam bar is provided from the position inside the package line to the position outside the bending position, and the resin thickness on the leads of the mold clamp portion is 10 μm or less, and the dam bars are placed on the leads of the bending portion. Resin thickness of 30μ
This is achieved by setting m or more. For details, set the resin thickness on the leads of the mold clamp to 10
When the thickness is not more than μm, no stress is applied to the mold clamp pressure, and when the thickness of the resin on the lead of the bent portion is not less than 30 μm, the elongation as resin characteristics is given. That is, as shown in FIG.
The structure is resistant to tensile stress exerted on the insulating resin (120A, 120B) on the outer lead 111 and the insulating resin between the leads when the lead is bent. As a result, it is possible to provide a lead frame member having a dam bar made of a resin that is free from defects even during bending. Further, the dam bar is formed of a thermosetting resin, and the thermosetting resin has a normal temperature tensile elastic modulus of 3.0 × before molding.
When it is 10 ⁹ dyne / cm ² or less, the tensile elastic modulus at the mold temperature after die bonding and wire bonding is 1.
It is 0 × 10 ⁸ dynes / cm ² or more, and by selecting a material having a room temperature tensile elongation ratio of 50% or more after mold curing, even if it shrinks due to heat, it can be alleviated by the elongation of the resin. It is assumed that it withstands a transfer molding pressure at the time of resin encapsulation for manufacturing a semiconductor and does not tack the molding die, and that lead deformation due to the thermosetting insulating resin does not occur. Thus, it is possible to prevent the occurrence of coplanarity defects and skew defects of the outer leads caused by the thermosetting insulating resin. In addition, by providing the anisotropic conductive resin in a band shape so as to straddle the outer leads at the joint portion of the outer lead with the substrate, electrical connection with the circuit board can be easily performed without using solder. It is supposed to be possible.

[0010]

DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of a dam bar-free lead frame member of the present invention will be described with reference to the drawings. 1A is a schematic plan view of the entire dam bar-free lead frame member of the embodiment, and FIG. 1B is a schematic cross-sectional view of the dam bar taken along line A1-A2 of FIG. 1C is a diagram showing a part of the cross section taken along line A3-A4 of FIG. 1A, and FIG. 1C and FIG. 1B are a part of the cross section taken along line A5-A6 of FIG. 1A. It is the figure shown. 2B is a sectional view of a semiconductor device using the dam bar free lead frame member of the embodiment, and FIG. 2A is a part of a semiconductor device using the dam bar free lead frame member of the embodiment. FIG. 3 is a diagram for explaining the relationship between the bending of the outer lead after resin sealing and the tensile stress of the insulating resin using the dam bar free lead frame member of the embodiment. . Further, in FIG. 1A, an inner lead fixing portion (fixing tape) for fixing the inner leads to each other for securing positional accuracy in wire bonding is omitted. 1, 2, and 3
Inside, 100 is a dam bar free lead frame member, 11
0 is a dambar-free lead frame, 111 is an outer lead, 112 is an inner lead, 113 is a die pad, 114 is a tab suspension lead, 116 is a frame part, and 1 is a frame part.
Reference numeral 20 is a dam bar made of insulating resin, 120A is a thin portion of insulating resin, 120B is a thick portion of insulating resin, 130
Is a thermosetting insulating resin, 150 is a package line, 16
0 is a mold clamp part, 170 is a bending part, 180
Is silver plating, and 190 is a fixing tape. The dam bar free lead frame member 100 of this embodiment is shown in FIG.
As shown in (a), it includes a dam bar-free lead frame 110 that is externally processed without a dam bar, and a dam bar 120 made of an insulating resin. ) It is located outside the bending position from the inside position. In addition, here, the outer side of the bending position means the inner lead 11 of the outer lead 111 of the bending part 170.
It refers to the tip side, not the 2 side. The dam bar free lead frame member of this embodiment has a resin thickness T on the leads of the clamp portion 160, as shown in FIG.
1 has a thickness of 10 μm or less, and has a structure in which no stress is applied to the clamp pressure when resin-sealing for manufacturing a semiconductor device. Further, as shown in FIG. 3, during bending, stress acts on the thin portion 120A of the insulating resin, the thick portion 120B of the insulating resin, and the entire resin of the dam bar portion connected to the thin portion 120A. The thickness T2 of the resin on the lead of the processed portion 170 is 30 μm or more, which is thicker than that of T1, and at the time of the bending process shown in FIG. The structure is such that the tensile stress on the conductive insulating resin 130 is relaxed.

The lead frame 110 is a copper material having a thickness of 0.15 mm, and the outer lead pitch is 0.4 mm.
The lead frame member 100 has a package size of 28 m.
m-square QFP (Quad Flat Package)
It is applied to.

Thermosetting insulating resin 1 for forming the dam bar portion
30 is a thermosetting polyimide resin, which has an initial room temperature tensile elastic modulus of 1.8 × 10 ⁹ dyn / cm ² and a room temperature tensile elongation rate of 60% even after mold curing. The tensile elastic modulus at temperature is 2 × 10 ⁸ dyn / cm ² . The room temperature tensile elastic modulus before molding is preferably 3.0 × 1 since it can be relaxed by the elongation of the resin even if it shrinks by heating.
It is necessary that it is not more than ⁰⁹ dyn / cm ² . The tensile elastic modulus at the mold temperature after die-bonding and wi-bonding is preferably 1 × 10 6 in order to withstand the transfer mold pressure at the time of resin sealing for manufacturing a semiconductor and obtain a characteristic that the mold does not tack. ⁸ dy
n / cm ² or more is required. The room temperature tensile elongation after the mold cure is preferably 50% or more in order to prevent bending deformation of the leads.

Next, an embodiment of the method of manufacturing the dam bar free lead frame member of the present invention will be described with reference to FIG. The dam bar free lead frame member of the above-mentioned embodiment was produced by using a dam bar free lead frame having no dam bar that was externally processed by etching in the step shown in FIG. 5 described later. FIG. 4 shows a cross-sectional state of the dam bar portion and the inner lead portion where the thermosetting resin of the dam bar free lead frame member is provided, and FIGS. 4 (a) and 4 (b) show B1 of FIG. 4 (b).
It is sectional drawing in -B2. Then, as shown in FIG.
4 (f) is shown in FIG. 4 (a) (a) through FIG. 4 respectively.
(A) shows a part corresponding to (b). still,
The dam bar-free lead frame that has been externally processed in the process shown in FIG. 5 is normally in an imposition state,
In this imposition state, the dam bar free lead frame member and the semiconductor device are manufactured. First, the dam bar free lead frame 110 manufactured in the process shown in FIG. 5 described later was prepared. (FIG. 4A) At the tip of the inner lead 112, there is provided a connecting portion 118 that extends integrally with the inner lead 112 and fixes the inner leads to each other. Then inner lead 11
After silver plating 180 was applied to the wire bonding region at the tip of No. 2, a fixing tape 190 for fixing the inner leads 112 was attached so as to straddle the inner leads 112, and the inner leads 112 were fixed to each other.
(FIG. 4 (b)) The silver plating 180 was performed by a normal partial plating method. The fixing tape 190 is a polyimide tape. Next, a thermosetting resin 130 for making a dam bar was applied to a predetermined region so as to straddle the leads with a dispenser. (Fig. 4 (c)) The dispenser is ML8 manufactured by Musashino Engineering Co., Ltd.
08i was used. Dam bar free lead frame 110
Is fixed with a predetermined jig pin (not shown) and the application area is stored in advance. The method of forming the insulating resin portion is as follows.
This is a general method that is usually widely used. Subsequently, the dam bar free lead frame 110, which has been applied to a predetermined area, is placed in a drying oven and dried at 100 ° C. for 1 minute,
After the thermosetting insulating resin 130 is set to the B stage state, the dam bar forming area is formed on the dam bar 120 at the time of resin sealing by using a hydraulic press die.
It was pressed and filled between each lead of a predetermined area to be a part. (FIG. 4 (d)) A female film was coated on the front and back surfaces of the lead frame 110, and the thermosetting insulating resin 130 was filled with a press die (punch). The thickness of the resin on the leads of the clamp part 160 is 10 μm or less, and the thickness of the resin on the leads of the bending part 170 is 30 μm.
In order to make the length m or more, the spacer is bitten and the thermosetting insulating resin 130 is filled in the dam bar portion with a press die (punch), and at the same time, the thickness of the resin on the lead of the mold clamp portion 160 and the bent portion The thickness of the resin on the leads of 170 was adjusted to a desired thickness. It is possible to obtain this shape by punching a flat press die (punch) in two steps without using a spacer. The temperature of the mold when filling the thermosetting insulating resin 130 with the press mold (punch) was about 100 ° C., and the pressing time was about 1 minute. Next, the thermosetting insulating resin 130 was cured and hardened, and then the connecting portion 118, which is unnecessary for manufacturing the semiconductor device, was removed by a press. (FIG. 4E) As described above, the dam bar 120 made of the thermosetting insulating resin 130 was formed. If necessary, before or after the step of forming the dam bar portion 120, the die pad 103
A down-setting step (not shown) is performed to shift the above to a predetermined height downward. Further, the application of the thermosetting insulating resin in the method of manufacturing the dam bar free lead frame member of the above-described embodiment can be changed to the application of the thermosetting insulating resin paste by screen printing using a screen mask.

Next, a method of manufacturing the dam bar-free lead frame of the above embodiment by etching will be briefly described with reference to FIG. First, a lead frame material 510 made of a thin plate made of a copper alloy or 42% nickel-iron alloy and having a thickness of about 0.1 mm to 0.2 mm is thoroughly washed (FIG. 5 (a)), and then exposed to potassium dichromate. A photosensitive photoresist 520 such as a water-soluble casein resist used as an agent is uniformly applied to both surfaces of the lead frame material 510 (FIG. 6 (b)), and a high-pressure mercury lamp is passed through a mask on which a predetermined pattern is formed. Exposure, and the photosensitive resist is developed with a predetermined developing solution to obtain a resist pattern 530, and a film hardening process, a cleaning process and the like are performed as necessary (FIG. 5).
(C)) After that, an etching solution containing an aqueous ferric chloride solution as a main component is sprayed onto the thin plate to etch it to a predetermined size (FIG. 5 (d)), and the resist is peeled off and washed to prepare. (FIG. 5 (e)) The outer ends of the inner leads are integrally formed with the inner leads, and are externally machined with a connecting portion for connecting the inner leads to each other. This connection portion, which is originally unnecessary for manufacturing the semiconductor device, is removed after manufacturing the dam bar free lead frame member. Further, the outer shape processing is usually made by imposition.

Next, a modified example of the dam bar free lead frame member 100 of the embodiment will be described with reference to FIG. In FIG. 6, reference numeral 250 denotes an anisotropic conductive resin, which is provided on the outer lead portion in four parts so as to cover the entire outer leads in four directions. The outer lead portions are attached to the circuit board after the semiconductor device is manufactured using the dam bar free lead frame member. As shown in FIG. 6, the modified dam bar free lead frame member 100A is the dam bar free lead frame member of the embodiment. An anisotropic conductive resin 250 is attached to the outer lead portion on the side to be attached to the circuit board with respect to 100, whereby electrical connection between the semiconductor device and the circuit board is achieved.

The anisotropic conductive resin will be briefly described with reference to FIG. As shown in FIG. 7A, the semiconductor device using the dam bar free lead frame member 100A shown in FIG. 6 has a circuit board which is not a bending region of the outer lead 111 after forming the outer lead portion. The anisotropic conductive resin film 250 is attached to the contacting side. Below, the electrical connection between the outer lead and the electrode of the circuit board is shown in FIG.
An explanation will be given based on (b). Incidentally, FIG. 7 shows C in FIG.
It is a cross section including the outer lead 111 when viewed from one direction. In FIG. 7A, 253 is the anisotropic conductive resin film 2.
The supporting film of 50 is used by peeling it off when connecting the outer lead and the circuit board. The anisotropic conductive film 250 is one in which conductive particles 252 are dispersed in an adhesive layer 251 which is an insulator, and FIG.
As shown in (a), the outer lead 111 and the electrode 261 of the circuit board 260 are aligned, and then heated and pressurized, so that the outer lead 111 and the circuit board 260 are heated as shown in FIG. The electrode portion 261 of 260 is brought into contact with the conductive particles 252 via the conductive particles 252, and is electrically connected. That is, only the heated and pressurized outer lead portion 111 and the corresponding electrode 261 are electrically connected. The forming process is performed by using a predetermined forming jig so that the anisotropic conductive film 250 is not crushed. Anisotropic conductive film 250
As the adhesive layer 251, a styrene-butadiene rubber-based, ester-based, or acrylic-based insulator is used, and as the conductive particles 252, solder balls made of Pb, Sn, Cd, Zn, or the like, or Ni particles, Ag particles, Ag are used. It uses a conductive material such as coated carbon fibers, spherical particles obtained by metal-plating plastic beads, and worm-shaped particles, and can be thermocompression bonded. In particular, the worm-like particles have a good resistance when pressed and have high conductivity.

[0017]

As described above, the dam bar-free lead frame member according to the present invention is suitable for high integration of semiconductor devices.
(EN) It is possible to provide a resin-sealed semiconductor device capable of coping with a further narrowing of the pitch of outer leads in the resin-sealed semiconductor device. Specifically, as described above, the dam bar-free lead frame member of the present invention is provided with the insulating resin up to the position where the dam bar portion is widened and reaches the bent portion, and the thickness of the resin on the lead of the mold clamp portion. Since the thickness of the resin on the lead of the bent part is 30 μm or more, the problem of mold resin leakage when the width of the conventional dam bar is narrowed and the width of the dam bar is widened to reach the bent part. It is possible to solve the problem of substrate contamination during mounting due to cracking or peeling of the insulating resin in the bent portion when the insulating resin is provided. Also, like when forming a dam bar using a thermoplastic resin,
Lead deformation due to shrinkage at the time of high temperature heating press or heating at the time of assembling a semiconductor device does not occur. Further, it is supposed that the problem of surface oxidation hardly occurs in the copper lead frame and the problem of heating warp of the lead frame can be dealt with. After all, by using the dam bar-free lead frame member of the present invention and performing resin encapsulation, it is possible to manufacture a resin-encapsulated semiconductor device that is stable in quality and that can cope with narrowing the pitch without problems I have.

[Brief description of drawings]

FIG. 1 is a plan view and a sectional view of essential parts of a dam bar free lead frame member of an embodiment.

FIG. 2 is a diagram of a semiconductor device using the dam bar-free lead frame member of the embodiment.

FIG. 3 is a diagram for explaining tensile stress of an insulating resin in a bent portion of a semiconductor device.

FIG. 4 is a diagram for explaining a method of manufacturing the dam bar free lead frame member of the embodiment.

FIG. 5 is a diagram for explaining a method of manufacturing a dam bar free lead frame.

FIG. 6 is a plan view of a modified example of the dam bar free lead frame member of the embodiment.

FIG. 7 is a diagram for explaining an anisotropic conductive resin.

FIG. 8 is a view for explaining a conventional method for manufacturing a dam bar free lead frame member.

FIG. 9 is a schematic view of a main part of a conventional dam bar free lead frame member.

FIG. 10 is a plan view of a lead frame with a dam bar.

FIG. 11 is a schematic view of a resin-sealed semiconductor device.

[Explanation of symbols]

100 Dam Bar Free Lead Frame Member 110 Dam Bar Free Lead Frame 111 Outer Lead 112 Inner Lead 113 Die Pad (Tab) 114 Tab Suspension Lead 116 Frame Part 118 Connecting Part 120 Dam Bar Made of Insulating Resin 120A Thin Wall Part of Insulating Resin 120B Insulation Thick part 130 of thermosetting resin 130 Thermosetting insulating resin 150 Package line 160 Mold clamp part 170 Bending part 180 Silver plating 190 Fixing tape 210 Semiconductor device 211 Terminal 220 Sealing resin 230 Wire 250 Anisotropic conductive resin film 251 Adhesive layer 252 Conductive particles 253 Supporting film 260 Circuit board 261 Electrode 510 Lead frame material 520 Photo resist 530 Resist pattern 540 Outer lead 00 Dam Barless Lead Frame 801 Inner Lead 802 Outer Lead 804 Die Pad 810 Dice Spencer 820 (Organic) Insulating Resin Part 830 Cure Furnace (Drying Furnace) 840 Press Mold 912 Inner Lead 913 Outer Lead 914 Dam Bar 917 Mold Line 920 Dam Bar 1000 Dam Bar 1000 Lead frame 1001 Inner lead 1002 Outer lead 1003 Die pad 1004 Dam bar 1006 Frame (frame) portion 1100 Semiconductor device 1101 Semiconductor element 1102 Die pad portion 1103 Inner lead portion 1104 Outer lead portion 1105 Resin portion 1106 Semiconductor element pad 1107 Wire

Claims (3)

[Claims] 1. A dam bar free lead frame member for a resin-sealed semiconductor device, wherein a dam bar is formed of an insulating resin with respect to a dam bar free lead frame having no externally processed dam bar. The dam bar formed by is located outside the bending position of the outer lead from the position inside the package line, the resin thickness on the lead of the mold clamp part is 10 μm or less, and on the lead of the bending part. A dambar-free lead frame member having a resin thickness of 30 μm or more. 2. The dam bar according to claim 1, comprising a thermosetting resin, wherein the thermosetting resin has a room temperature tensile elastic modulus before molding of 3.0 × 10 ⁹ dyne / cm ² or less, a die bond and a wire. The tensile elastic modulus at the mold temperature after bonding is 1.0 × 10 ⁸ dyne / cm ² or more,
A dam bar-free lead frame member having a tensile elongation at room temperature of 50% or more after mold curing. 3. The dambar-free lead frame according to claim 1, wherein an anisotropic conductive resin is provided in a band shape so as to straddle the outer lead at a joint portion of the outer lead with the substrate. Element.