JPH09289230A - Tape with adhesive for tab, semiconductor connecting board semiconductor device - Google Patents

Tape with adhesive for tab, semiconductor connecting board semiconductor device

Info

Publication number
JPH09289230A
JPH09289230A JP9034796A JP3479697A JPH09289230A JP H09289230 A JPH09289230 A JP H09289230A JP 9034796 A JP9034796 A JP 9034796A JP 3479697 A JP3479697 A JP 3479697A JP H09289230 A JPH09289230 A JP H09289230A
Authority
JP
Japan
Prior art keywords
adhesive
tape
epoxy resin
tab
resin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9034796A
Other languages
Japanese (ja)
Other versions
JP3503392B2 (en
Inventor
Taiji Sawamura
泰司 澤村
Yoshio Ando
芳雄 安藤
Yukitsuna Konishi
幸綱 小西
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toray Industries Inc
Original Assignee
Toray Industries Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toray Industries Inc filed Critical Toray Industries Inc
Priority to JP03479697A priority Critical patent/JP3503392B2/en
Publication of JPH09289230A publication Critical patent/JPH09289230A/en
Application granted granted Critical
Publication of JP3503392B2 publication Critical patent/JP3503392B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/50Tape automated bonding [TAB] connectors, i.e. film carriers; Manufacturing methods related thereto
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/50Tape automated bonding [TAB] connectors, i.e. film carriers; Manufacturing methods related thereto
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01045Rhodium [Rh]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/14Integrated circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Laminated Bodies (AREA)
  • Adhesive Tapes (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Wire Bonding (AREA)

Abstract

PROBLEM TO BE SOLVED: To obtain a product superior in adhesion, chemicals resistance and insulation by using an adhesive layer contg. a thermoplastic resin A and an epoxy resin B which contains an epoxy resin having a skeleton shown by specified formula as a necessary component. SOLUTION: A tape with adhesive for TAB is composed of a laminate of an adhesive layer and protective film layer on a flexible org. insulation film. The adhesive layer contains a thermoplastic resin A and an epoxy resin B which contains an epoxy resin having a skeleton shown by the formula as a necessary component, wherein two of R1-R3 are 2,3-epoxypropoxy groups and the others are H atoms and the others C1-C4 are lower alkyl groups or halogen atoms. The epoxy resin uses e.g. a 1,6-bis(2,3epoxypropoxy)-naphthalene.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【発明の属する技術分野】本発明は半導体集積回路の実
装方法であるテープオートメーテッドボンディング(T
AB)方式に用いられる接着剤付きテープ(以下、TA
B用テープと称する)に関する。さらに詳しくは、高温
高湿下での絶縁性、レジスト剥離やメッキ処理後の接着
性に優れたTAB用テープおよびそれを用いた半導体装
置に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a tape automated bonding (T)
Tape with adhesive used in the AB method (hereinafter, TA
B). More specifically, the present invention relates to a TAB tape having excellent insulation properties under high temperature and high humidity and adhesiveness after resist stripping and plating treatment, and a semiconductor device using the same.

【0002】[0002]

【従来の技術】通常のTAB用テープは、ポリイミドフ
ィルム等の可撓性を有する有機絶縁性フィルム上に、接
着剤層および保護フィルム層として離型性を有するポリ
エステルフィルム等を積層した3層構造より構成されて
いる。
2. Description of the Related Art An ordinary TAB tape has a three-layer structure in which a flexible organic insulating film such as a polyimide film is laminated with a releasing polyester film or the like as an adhesive layer and a protective film layer. It is composed of

【0003】TAB用テープは、(1)スプロケットお
よびデバイス孔の穿孔、(2)銅箔との熱ラミネート、
(3)パターン形成(レジスト塗布、エッチング、レジ
スト除去)、(4)スズまたは金−メッキ処理などの加
工工程を経てTABテープ(パターンテープ)に加工さ
れる。図1にパターンテープの形状を示す。図2に本発
明の半導体装置の一態様の断面図を示す。パターンテー
プのインナーリード部6を、半導体集積回路8の金バン
プ10に熱圧着(インナーリードボンディング)し、半
導体集積回路を搭載する。次いで、封止樹脂9による樹
脂封止工程を経て半導体装置が作成される。また、イン
ナーリード部を有さないパターンテープを用いて、その
導体と半導体集積回路の金バンプとの間をワイヤーリー
ドボンディングで接続する半導体集積回路の搭載方法も
採用されている。このような半導体装置をテープキャリ
アパッケージ(TCP)型半導体装置と称する。TCP
型半導体装置は、他の部品を搭載した回路基板等とアウ
ターリード7を介して接続(アウターリードボンディン
グ)され、電子機器への実装がなされる。
[0003] TAB tapes include (1) perforation of sprocket and device holes, (2) thermal lamination with copper foil,
It is processed into a TAB tape (pattern tape) through processing steps such as (3) pattern formation (resist coating, etching, resist removal) and (4) tin or gold-plating. FIG. 1 shows the shape of the pattern tape. FIG. 2 is a cross-sectional view of one embodiment of the semiconductor device of the present invention. The inner lead portion 6 of the pattern tape is thermocompression-bonded (inner lead bonding) to the gold bump 10 of the semiconductor integrated circuit 8 to mount the semiconductor integrated circuit. Next, a semiconductor device is created through a resin sealing process using the sealing resin 9. Further, a method of mounting a semiconductor integrated circuit in which a pattern tape having no inner lead portion is used and a conductor and a gold bump of the semiconductor integrated circuit are connected by wire lead bonding has been adopted. Such a semiconductor device is called a tape carrier package (TCP) type semiconductor device. TCP
The mold semiconductor device is connected to a circuit board or the like on which other components are mounted via outer leads 7 (outer lead bonding), and is mounted on an electronic device.

【0004】一方、近年の電子機器の小型化・軽量化に
伴い、半導体パッケージも高密度実装化を目的に、従来
の接続端子(アウターリード)をパッケージ側面に配列
したQFP(クワッド・フラット・パッケージ)、SO
P(スモール・アウトライン・パッケージ)に代わり、
パッケージの裏面に接続端子を配列するBGA(ボール
・グリッド・アレイ)、CSP(チップ・スケール・パ
ッケージ)が、一部用いられるようになってきた。BG
A、CSPがQFP、SOPと構造的に最も大きく異な
る点は、前者は、インターポーザーと称される基板を必
要とするのに対し、後者は金属製のリードフレームを用
いることにより必ずしも基板を用いることにより必ずし
も基板を必要としない点にある。ここでいうインターポ
ーザーは、ガラスエポキシ基板やポリイミド等の有機絶
縁性フィルムに銅箔を貼り合わせたものが、一般的に用
いられる。したがって、これらBGA、CSPなどの半
導体装置にも本発明のTAB用接着剤付きテープを使用
することができ、得られたBGA、CSPも本発明の半
導体装置に含まれる。図3および図4に本発明の半導体
装置(BGA、CSP)の一態様の断面図を示す。
On the other hand, with the miniaturization and weight reduction of electronic equipment in recent years, a semiconductor package has been mounted on a QFP (quad flat package) in which conventional connection terminals (outer leads) are arranged on the side of the package for the purpose of high-density mounting. ), SO
Instead of P (Small Outline Package)
BGA (ball grid array) and CSP (chip scale package), in which connection terminals are arranged on the back surface of the package, have been partially used. BG
A and CSP are structurally most different from QFP and SOP in that the former requires a substrate called an interposer, while the latter necessarily uses a substrate by using a metal lead frame. Thus, a substrate is not necessarily required. As the interposer referred to here, one obtained by bonding a copper foil to an organic insulating film such as a glass epoxy substrate or polyimide is generally used. Therefore, the tape with an adhesive for TAB of the present invention can also be used for semiconductor devices such as BGA and CSP, and the obtained BGA and CSP are also included in the semiconductor device of the present invention. 3 and 4 are cross-sectional views of one embodiment of the semiconductor device (BGA, CSP) of the present invention.

【0005】上記のパッケージ形態では、いずれも最終
的にTAB用テープの接着剤層はパッケージ内に残留す
るため、絶縁性、耐熱性、接着性が要求される。
[0005] In any of the above package forms, the adhesive layer of the TAB tape ultimately remains in the package, and therefore, insulation, heat resistance, and adhesion are required.

【0006】近年、電子機器の小型化に伴う高密度化に
より、TABテープ方式における導線幅、ピッチ間距離
は狭くなる傾向にあり、接着剤にはより高い絶縁性、接
着性が要求されるようになってきた。また、導線幅減少
にともない前記した多数の工程において種々の薬品にさ
らされる接着剤層の耐薬品性が、初期の接着強度ととも
に重要な問題になってきた。特に、レジスト剥離、金メ
ッキ時のアルカリやエッチング、スズメッキ時の酸に対
する耐薬品性が重要である。
[0006] In recent years, due to the higher density of electronic equipment due to miniaturization, the conductor wire width and the distance between pitches in the TAB tape system tend to become narrower, and higher adhesiveness and adhesiveness are required for adhesives. Has become. In addition, the chemical resistance of the adhesive layer exposed to various chemicals in the above-mentioned many steps has become an important issue along with the initial adhesive strength as the conductor width decreases. In particular, chemical resistance to alkalis and etching during resist stripping, gold plating, and acid during tin plating is important.

【0007】接着剤の改良も種々検討されている。たと
えば、耐薬品性を改良する目的でビスA型エポキシ樹脂
とアミン価3以上のポリアミド樹脂を用いる方法(特開
平5−29399号公報)、シロキサン構造を有するエ
ポキシ樹脂を添加する方法(特開平5−259228号
公報)、マレイミド樹脂を添加する方法(特開平5−2
91356号公報)などが、また、絶縁性を向上する目
的でエポキシ樹脂の塩素イオン含有量を200ppm以
下と高純度化する方法(特開平7−74213号公報)
などが提案されている。
Various improvements in adhesives have been investigated. For example, a method of using a bis A type epoxy resin and a polyamide resin having an amine value of 3 or more for the purpose of improving chemical resistance (Japanese Patent Laid-Open No. 5-29399), and a method of adding an epoxy resin having a siloxane structure (Japanese Laid-Open Patent No. No. 259228), a method of adding a maleimide resin (JP-A 5-2).
No. 91356) and a method of highly purifying the chlorine ion content of the epoxy resin to 200 ppm or less for the purpose of improving the insulating property (JP-A-7-74213).
Have been proposed.

【0008】[0008]

【発明が解決しようとする課題】しかしながら、種々の
方法で改良された接着剤も、それぞれ少しづづ効果をあ
げてきているが、配線幅の減少にともなうより過酷な要
請に答えるには十分ではなかった。
However, although the adhesives improved by various methods have been gradually improving their effects, they are not enough to meet the more severe demands associated with the reduction of the wiring width. Was.

【0009】本発明の目的は、このような問題点を解決
し接着性、耐薬品性、絶縁性に優れたTAB用テープお
よびそれを用いた半導体装置を提供することにある。
It is an object of the present invention to provide a TAB tape having excellent adhesiveness, chemical resistance and insulation, and a semiconductor device using the same, which solves the above problems.

【0010】[0010]

【課題を解決するための手段】すなわち、本発明は可撓
性を有する有機絶縁性フィルム上に、接着剤層および保
護フィルム層を有する積層体から構成されるTAB用接
着剤付きテープにおいて、該接着剤層が熱可塑性樹脂
(A)およびエポキシ樹脂(B)を含有し、前記エポキ
シ樹脂(B)が下記式(I)で示される骨格を有するエ
ポキシ樹脂(b)を必須成分として含有することを特徴
とするTAB用接着剤付きテープおよびそれを用いた半
導体装置に関する。
That is, the present invention provides a TAB adhesive tape comprising a laminate having an adhesive layer and a protective film layer on a flexible organic insulating film. The adhesive layer contains a thermoplastic resin (A) and an epoxy resin (B), and the epoxy resin (B) contains an epoxy resin (b) having a skeleton represented by the following formula (I) as an essential component. And a tape with an adhesive for TAB and a semiconductor device using the same.

【0011】[0011]

【化2】 (ただし、R1〜R8のうち2つは2,3−エポキシプ
ロポキシ基であり、残りは水素原子、C1〜C4の低級
アルキル基またはハロゲン原子を示す。)
Embedded image (However, two of R1 to R8 are 2,3-epoxypropoxy groups, and the rest are hydrogen atoms, C1 to C4 lower alkyl groups or halogen atoms.)

【0012】[0012]

【発明の実施の形態】以下、本発明の構成を詳述する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The configuration of the present invention will be described below in detail.

【0013】本発明においては、接着剤層が熱可塑性樹
脂(A)およびエポキシ樹脂(B)を含有し、前記エポ
キシ樹脂(B)が上記式(I)で示される骨格を有する
エポキシ樹脂(b)を必須成分として含有することが重
要である。
In the present invention, the adhesive layer contains the thermoplastic resin (A) and the epoxy resin (B), and the epoxy resin (B) has the skeleton represented by the above formula (I) (b). ) Is essential as an essential ingredient.

【0014】本発明における熱可塑性樹脂(A)は、接
着剤層に可撓性を与えるものであれば特に限定されない
が、その具体例としては、ポリエチレン、ポリエステ
ル、SBR、NBR、ポリアミド樹脂、SEBS等が挙
げられる。中でも、低吸水で絶縁性の優れる炭素数が3
6であるジカルボン酸(いわゆるダイマー酸)を構成成
分として含有するポリアミド樹脂(a)が好ましい。ダ
イマー酸を構成成分として含有するポリアミド樹脂
(a)は、常法によるダイマー酸とジアミンの重縮合に
より得られるが、この際にダイマー酸以外のアジピン
酸、アゼライン酸、セバシン酸等のジカルボン酸を共重
合成分として含有してもよく、ジアミンはエチレンジア
ミン、ヘキサメチレンジアミン、ピペラジン等公知のも
のが使用でき、吸水性、溶解性の点から2種類以上の混
合でもよい。さらには、エポキシ樹脂(B)との相溶性
を向上し良好な接着性を得る目的で、重縮合の際に、当
量比でジアミン成分を過剰に配合し、ポリアミド末端に
未反応アミンを残したポリアミド樹脂(a’)が好まし
い。アミン価の好ましい範囲は1以上3未満であり、ア
ミン価1未満では接着性向上効果は発現しにくく、3以
上では接着剤自体の保存性が低下する。
The thermoplastic resin (A) in the present invention is not particularly limited as long as it gives flexibility to the adhesive layer, and specific examples thereof include polyethylene, polyester, SBR, NBR, polyamide resin and SEBS. Etc. Among them, the number of carbon atoms which is low in water absorption and excellent in insulating properties is 3
A polyamide resin (a) containing a dicarboxylic acid of 6 (so-called dimer acid) as a constituent is preferable. Polyamide resin (a) containing dimer acid as a constituent component is obtained by polycondensation of dimer acid and diamine by a conventional method. At this time, dicarboxylic acids other than dimer acid, such as adipic acid, azelaic acid and sebacic acid, are used. The diamine may be contained as a copolymerization component, and known diamines such as ethylenediamine, hexamethylenediamine and piperazine may be used, and two or more kinds may be mixed from the viewpoint of water absorption and solubility. Furthermore, for the purpose of improving compatibility with the epoxy resin (B) and obtaining good adhesiveness, the diamine component was excessively blended in an equivalent ratio during polycondensation to leave unreacted amine at the polyamide terminal. Polyamide resin (a ') is preferred. The preferred range of the amine value is 1 or more and less than 3, and if the amine value is less than 1, the effect of improving the adhesiveness is hardly exhibited, and if it is 3 or more, the preservability of the adhesive itself is reduced.

【0015】ここでいうアミン価とは、ポリアミド1g
中に含まれる塩基性チッソを中和する過塩素酸と当量の
KOHのmg数を示す。
The amine value mentioned here means 1 g of polyamide.
The number of mg of KOH equivalent to perchloric acid for neutralizing basic nitrogen contained therein is shown.

【0016】本発明において、エポキシ樹脂(B)は下
記式(I)
In the present invention, the epoxy resin (B) is represented by the following formula (I)

【化3】 (ただし、R1〜R8のうち2つは2,3−エポキシプ
ロポキシ基であり、残りは水素原子、C1〜C4の低級
アルキル基またはハロゲン原子を示す。)で表される骨
格を有するエポキシ樹脂(b)を必須成分として含有す
ることが重要である。エポキシ樹脂(b)を含有しない
場合は、レジスト処理、メッキ処理後の高い接着性や高
い絶縁性は発揮されない。
Embedded image (However, two of R1 to R8 are 2,3-epoxypropoxy groups, and the rest are hydrogen atoms, C1 to C4 lower alkyl groups or halogen atoms.) Epoxy resin having a skeleton ( It is important to include b) as an essential component. When the epoxy resin (b) is not contained, high adhesiveness and high insulation after resist treatment and plating treatment cannot be exhibited.

【0017】上記式(I)において、R1〜R8の好ま
しい具体例としては、水素原子、メチル基、エチル基、
sec-ブチル基、t-ブチル基、塩素原子、臭素原子などが
挙げられる。
In the above formula (I), preferred examples of R1 to R8 are hydrogen atom, methyl group, ethyl group,
Examples include sec-butyl group, t-butyl group, chlorine atom and bromine atom.

【0018】本発明におけるエポキシ樹脂(b)の好ま
しい具体例としては、1,5−ジグリシジルナフタレ
ン、1,5−ジグリシジル−7−メチルナフタレン、
1,6−ジグリシジルナフタレン、1,6−ジグリシジ
ル−2−メチルナフタレン、1,6−ジグリシジル−8
−メチルナフタレン、1,6−ジグリシジル−4,8−
ジメチルナフタレン、2−ブロム−1,6−ジグリシジ
ルナフタレンおよび8−ブロム−1,6−ジグリシジル
ナフタレンなどが挙げられる。
Preferred specific examples of the epoxy resin (b) in the present invention are 1,5-diglycidylnaphthalene, 1,5-diglycidyl-7-methylnaphthalene,
1,6-diglycidylnaphthalene, 1,6-diglycidyl-2-methylnaphthalene, 1,6-diglycidyl-8
-Methylnaphthalene, 1,6-diglycidyl-4,8-
Examples thereof include dimethylnaphthalene, 2-bromo-1,6-diglycidylnaphthalene and 8-bromo-1,6-diglycidylnaphthalene.

【0019】本発明においてエポキシ樹脂(B)は上記
のエポキシ樹脂(b)とともに該エポキシ樹脂(b)以
外の他のエポキシ樹脂をも併用して含有することができ
る。併用できる他のエポキシ樹脂としては、たとえば、
ビスフェノールA型エポキシ樹脂、ビスフェノールF型
エポキシ、クレゾールノボラック型エポキシ樹脂、フェ
ノールノボラック型エポキシ樹脂、ビスフェノールAや
レゾルシンから合成される各種ノボラック型エポキシ樹
脂、線状脂肪族エポキシ樹脂、脂環式エポキシ樹脂、複
素環式エポキシ樹脂などが挙げられる。
In the present invention, the epoxy resin (B) may contain an epoxy resin other than the epoxy resin (b) in combination with the epoxy resin (b). Other epoxy resins that can be used in combination include, for example,
Bisphenol A type epoxy resin, bisphenol F type epoxy, cresol novolac type epoxy resin, phenol novolac type epoxy resin, various novolac type epoxy resins synthesized from bisphenol A and resorcin, linear aliphatic epoxy resin, alicyclic epoxy resin, Examples include heterocyclic epoxy resins.

【0020】エポキシ樹脂(B)中に含有されるエポキ
シ樹脂(b)の割合に関しては特に制限がなく、必須成
分としてエポキシ樹脂(b)が含有されれば本発明の効
果は発揮されるが、より十分な効果を発揮させるために
は、エポキシ樹脂(b)をエポキシ樹脂(B)中に通常
20重量%以上、好ましくは40重量%以上、さらに好
ましくは60重量%以上含有せしめる必要がある。
The proportion of the epoxy resin (b) contained in the epoxy resin (B) is not particularly limited, and the effect of the present invention is exhibited if the epoxy resin (b) is contained as an essential component. In order to exert a more sufficient effect, the epoxy resin (b) must be contained in the epoxy resin (B) in an amount of usually 20% by weight or more, preferably 40% by weight or more, and more preferably 60% by weight or more.

【0021】本発明におけるエポキシ樹脂(B)の配合
量は、ポリアミド樹脂100重量部に対して2〜100
重量部、好ましくは5〜70重量部である。
The compounding amount of the epoxy resin (B) in the present invention is 2 to 100 relative to 100 parts by weight of the polyamide resin.
Parts by weight, preferably 5 to 70 parts by weight.

【0022】本発明でいう可撓性を有する絶縁性フィル
ムとはポリイミド、ポリエステル、ポリフェニレンスル
フィド、ポリエーテルスルホン、ポリエーテルエーテル
ケトン、アラミド、ポリカーボネート、ポリアリレート
等のプラスチックあるいはエポキシ樹脂含浸ガラスクロ
ス等の複合材料からなる厚さ25〜125μmのフィル
ムであり、これから選ばれる複数のフィルムを積層して
用いても良い。中でも、熱膨張係数の小さなポリイミド
フィルムが好ましく用いられる。また、これらのフィル
ムは必要に応じて加水分解、コロナ放電、低温プラズ
マ、物理的粗面化、易接着コーティング処理等の表面処
理を施すことが望ましい。
The flexible insulating film referred to in the present invention is a plastic such as polyimide, polyester, polyphenylene sulfide, polyether sulfone, polyether ether ketone, aramid, polycarbonate, polyarylate, or epoxy resin impregnated glass cloth. It is a film made of a composite material and having a thickness of 25 to 125 μm, and a plurality of films selected from these may be laminated and used. Above all, a polyimide film having a small coefficient of thermal expansion is preferably used. Further, it is desirable that these films are subjected to surface treatment such as hydrolysis, corona discharge, low temperature plasma, physical surface roughening, and easy adhesion coating treatment, if necessary.

【0023】本発明でいう保護フィルム層とは、銅箔を
ラミネートする前に接着剤面からTAB用テープの形態
を損なうことなく剥離できれば特に限定されないが、た
とえばシリコーンあるいはフッ素化合物コーティング処
理したポリエステルフィルム、ポリオレフィンフィルム
およびこれらをラミネートした紙などが挙げられる。
The protective film layer as referred to in the present invention is not particularly limited as long as it can be peeled from the adhesive surface without impairing the form of the TAB tape before laminating the copper foil, but for example, a polyester film coated with silicone or a fluorine compound. , Polyolefin films, and papers obtained by laminating these films.

【0024】本発明において、接着剤層にフェノール樹
脂(C)を添加することにより、一層の接着性および絶
縁性を向上させることができる。フェノール樹脂(C)
の具体例としては、たとえばフェノールノボラック樹
脂、クレゾールノボラック樹脂、ビスフェノールA型樹
脂や各種レゾール樹脂などが挙げられる。
In the present invention, by adding the phenol resin (C) to the adhesive layer, the adhesiveness and insulating property can be further improved. Phenol resin (C)
Specific examples thereof include phenol novolak resin, cresol novolak resin, bisphenol A type resin and various resol resins.

【0025】フェノール樹脂の配合割合は、通常エポキ
シ樹脂1当量に対してフェノール性水酸基0.5〜1
0.0当量、好ましくは0.7〜7.0当量となる範囲
であることが望ましい。
The mixing ratio of the phenol resin is usually 0.5 to 1 of the phenolic hydroxyl group per equivalent of the epoxy resin.
It is desirably in the range of 0.0 equivalent, preferably 0.7 to 7.0 equivalent.

【0026】本発明の接着剤層にエポキシ樹脂(B)の
単独反応、エポキシ樹脂(B)とポリアミド樹脂(A)
やフェノール樹脂(C)との反応を促進させる硬化促進
剤を含有することができる。硬化促進剤は硬化反応を促
進するものならば特に限定されず、その具体例として
は、たとえば、2−メチルイミダゾール、2,4−ジメ
チルイミダゾール、2−エチル−4−メチルイミダゾー
ル、2−フェニルイミダゾール、2−フェニル−4−メ
チルイミダゾールおよび2−ヘプタデシルイミダゾール
などのイミダゾール化合物、トリエチルアミン、ベンジ
ルジメチルアミン、α−メチルベンジルジメチルアミ
ン、2−(ジメチルアミノメチル)フェノール、2,
4,6−トリス(ジメチルアミノメチル)フェノールお
よび1,8−ジアザビシクロ(5,4,0)ウンデセン
−7などの3級アミン化合物、ジルコニウムテトラメト
キシド、ジルコニウムテトラプロポキシド、テトラキス
(アセチルアセトナト)ジルコニウムおよびトリ(アセ
チルアセトナト)アルミニウムなどの有機金属化合物、
およびトリフェニルホスフィン、トリメチルホスフィ
ン、トリエチルホスフィン、トリブチルホスフィン、ト
リ(p−メチルフェニル)ホスフィンおよびトリ(ノニ
ルフェニル)ホスフィンなどの有機ホスフィン化合物が
挙げられる。
A single reaction of the epoxy resin (B) with the adhesive layer of the present invention, an epoxy resin (B) and a polyamide resin (A)
Or a curing accelerator that accelerates the reaction with the phenol resin (C). The curing accelerator is not particularly limited as long as it accelerates the curing reaction, and specific examples thereof include, for example, 2-methylimidazole, 2,4-dimethylimidazole, 2-ethyl-4-methylimidazole, 2-phenylimidazole , Imidazole compounds such as 2-phenyl-4-methylimidazole and 2-heptadecylimidazole, triethylamine, benzyldimethylamine, α-methylbenzyldimethylamine, 2- (dimethylaminomethyl) phenol, 2,
Tertiary amine compounds such as 4,6-tris (dimethylaminomethyl) phenol and 1,8-diazabicyclo (5,4,0) undecene-7, zirconium tetramethoxide, zirconium tetrapropoxide, tetrakis (acetylacetonate) Organometallic compounds such as zirconium and tri (acetylacetonato) aluminum,
And organic phosphine compounds such as triphenylphosphine, trimethylphosphine, triethylphosphine, tributylphosphine, tri (p-methylphenyl) phosphine and tri (nonylphenyl) phosphine.

【0027】なお、これらの硬化促進剤は、用途によっ
て2種類以上を併用してもよく、その添加量は、エポキ
シ樹脂(B)100重量部に対して0.1〜10重量部
の範囲が好ましい。
Two or more of these curing accelerators may be used in combination depending on the intended use, and the addition amount thereof is in the range of 0.1 to 10 parts by weight with respect to 100 parts by weight of the epoxy resin (B). preferable.

【0028】次に、TAB用接着剤付きテープの製造方
法について説明する。可撓性を有する絶縁フィルムに、
接着剤組成物を溶剤に溶解した塗料を塗布、乾燥する。
接着剤層の膜圧は10〜25μmとなるように塗布する
ことが好ましい。乾燥条件は、通常100〜200℃、
1〜5分である。溶剤は特に限定されないが、トルエ
ン、キシレン、クロルベンゼン等の芳香族系とメタノー
ル、エタノール、プロパノール等のアルコール系の混合
溶媒が好適である。このようにして得られたフィルムに
保護フィルムをラミネートし、最後に通常35〜158
mm程度にスリットする。
Next, a method of manufacturing the adhesive tape for TAB will be described. Insulating film with flexibility,
A paint prepared by dissolving the adhesive composition in a solvent is applied and dried.
It is preferable to apply the adhesive so that the film thickness of the adhesive layer is 10 to 25 μm. Drying conditions are usually 100 to 200 ° C,
1 to 5 minutes. The solvent is not particularly limited, but a mixed solvent of an aromatic solvent such as toluene, xylene and chlorobenzene and an alcohol solvent such as methanol, ethanol and propanol is preferable. A protective film is laminated on the film thus obtained, and finally, usually 35 to 158.
Slit to about mm.

【0029】[0029]

【実施例】以下、実施例により本発明をさらに具体的に
説明する。
EXAMPLES The present invention will be described in more detail below with reference to examples.

【0030】実施例1〜3 、比較例1 下記熱可塑性樹脂、エポキシ樹脂、フェノール樹脂およ
びその他添加剤を、それぞれ表1に示した組成比となる
ように配合し、濃度20重量%となるようにメタノール
/モノクロルベンゼン混合溶媒に40℃で撹拌、溶解し
て接着剤溶液を作成した。
Examples 1 to 3 and Comparative Example 1 The following thermoplastic resin, epoxy resin, phenol resin and other additives were blended so as to have the composition ratios shown in Table 1, respectively, so that the concentration was 20% by weight. Was stirred and dissolved in a mixed solvent of methanol / monochlorobenzene at 40 ° C. to prepare an adhesive solution.

【0031】A.熱可塑性樹脂 I.ポリアミド樹脂(酸性分:ダイマー酸、アミン成
分:ヘキサメチレンジアミン、酸価1.0、アミン価
0) II.ポリアミド樹脂(酸成分:ダイマー酸、アミン成
分:ヘキサメチレンジアミン、酸価1.0、アミン価
2.0) B.エポキシ樹脂 I. 1,6−ビス(2,3−エポキシプロポキシ)−
ナフタレン(エポキシ当量:149) II.ビスフェノールA型エポキシ樹脂(エポキシ当
量:186) C.フェノール樹脂 レゾールフェノール”CKM−1282”(昭和高分子
(株)製) D.添加剤 2−ヘプタデシルイミダゾール
A. Thermoplastic resin I. Polyamide resin (acid content: dimer acid, amine component: hexamethylenediamine, acid value 1.0, amine value 0) II. Polyamide resin (acid component: dimer acid, amine component: hexamethylenediamine, acid value 1.0, amine value 2.0) B. Epoxy resin I. 1,6-bis (2,3-epoxypropoxy)-
Naphthalene (epoxy equivalent: 149) II. Bisphenol A type epoxy resin (epoxy equivalent: 186) C.I. Phenol resin Resol phenol "CKM-1282" (manufactured by Showa Highpolymer Co., Ltd.) D. Additive 2-heptadecyl imidazole

【0032】これらの接着剤溶液をバーコータで、厚さ
75μmのポリイミドフィルム(宇部興産(株)製“ユ
ーピレックス”75S)に約18μmの乾燥厚さとなる
ように塗布し、100℃、1分および160℃で5分間
の乾燥を行いTAB用接着剤付きテープを作成した。次
に、これらのTAB用接着剤付きテープに18μmの電
解銅箔を140℃、9.8×104Paの条件でラミネ
ートした後、エアオーブン中で、80℃、3時間、10
0℃、5時間、150℃、5時間の順次加熱処理を行
い、銅箔付きTAB用テープを得た。得られた銅箔付き
TAB用テープの銅箔面に常法によりフォトレジスト膜
形成、エッチング、レジスト剥離を行い、接着強度およ
び耐スズメッキ処理の評価用サンプルをそれぞれ作成
し、次の測定方法により各接着剤の特性を評価した。結
果を表1に示す。
These adhesive solutions were applied with a bar coater to a polyimide film having a thickness of 75 μm (“UPILEX” 75S manufactured by Ube Industries, Ltd.) so as to have a dry thickness of about 18 μm, and 100 ° C. for 1 minute and 160 The tape with an adhesive for TAB was prepared by drying at 5 ° C. for 5 minutes. Next, an 18 μm electrolytic copper foil was laminated on these tapes with an adhesive for TAB under the conditions of 140 ° C. and 9.8 × 10 4 Pa, and then in an air oven at 80 ° C. for 3 hours.
A heat treatment was sequentially performed at 0 ° C. for 5 hours and 150 ° C. for 5 hours to obtain a TAB tape with a copper foil. Photoresist film formation, etching, and resist peeling were performed on the copper foil surface of the obtained TAB tape with copper foil by a conventional method, and samples for evaluation of adhesion strength and tin plating resistance were prepared, respectively. The properties of the adhesive were evaluated. The results are shown in Table 1.

【0033】評価方法 (1)スズメッキ処理 評価用サンプルを、ホウフッ酸系の無電解スズメッキ液
に70℃、5分浸漬処理し、0.5μm厚のメッキを施
した。
Evaluation Method (1) Tin Plating Treatment The evaluation sample was immersed in a borofluoric acid-based electroless tin plating solution at 70 ° C. for 5 minutes, and plated with a thickness of 0.5 μm.

【0034】(2)剥離強度 導体幅50μmの評価用サンプルを用いて、導体を90
°方向に50mm/minの速度で剥離し、その際の剥
離力を測定した。
(2) Peel strength Using a sample for evaluation having a conductor width of 50 μm, the conductor
Peeling was performed in the ° direction at a speed of 50 mm / min, and the peeling force at that time was measured.

【0035】(3)高温高湿バイアス絶縁性 導体幅200μm、導体間距離50μmの櫛型形状の測
定用パターンを用いて、130℃、85%RHの環境下
で100Vの電圧を印加し、絶縁抵抗値が初期値の1/
10以下に低下する時間を測定した。
(3) High-temperature and high-humidity bias insulation property Insulation was performed by applying a voltage of 100 V in an environment of 130 ° C. and 85% RH using a comb-shaped measuring pattern having a conductor width of 200 μm and a conductor distance of 50 μm. Resistance value is 1 / of initial value
The time to fall below 10 was measured.

【0036】上記の手順で得られたTAB用接着剤付き
テープを用いて、前述の評価方法(1)および(2)と
同一の方法で半導体集積回路接続用の導体回路を形成
し、図1に示すパターンテープを得た。特性を表1に示
す。
Using the tape with adhesive for TAB obtained by the above procedure, a conductor circuit for connecting a semiconductor integrated circuit was formed by the same method as the above-described evaluation methods (1) and (2), and FIG. The pattern tape shown in was obtained. Table 1 shows the characteristics.

【0037】更にこのパターンテープを用いて、450
℃、1分の条件でインナーリードボンディングを行い、
半導体集積回路を接続した。しかるのちに、エポキシ系
液状封止剤(北陸塗料(株)製”チップコート”132
0−617)で樹脂封止を行い、半導体装置を得た。図
2は得られた半導体装置の断面を示したものである。
Further, using this pattern tape, 450
Inner lead bonding is performed under the condition of ℃ for 1 minute,
A semiconductor integrated circuit was connected. After that, an epoxy liquid encapsulant (“Chip coat” 132 manufactured by Hokuriku Paint Co., Ltd.)
0-617) was used for resin encapsulation to obtain a semiconductor device. FIG. 2 shows a cross section of the obtained semiconductor device.

【0038】[0038]

【表1】 [Table 1]

【0039】表1の結果から明らかなように、本発明に
より得られたTABテープは、耐薬品性に優れ高い接着
性と耐湿絶縁性を有することが分かる。一方、本発明の
エポキシ樹脂を用いていない比較例1は、接着性が低い
ばかりか耐薬品性、耐湿絶縁性においても劣っている。
As is clear from the results shown in Table 1, the TAB tape obtained according to the present invention has excellent chemical resistance and high adhesiveness and moisture resistant insulation. On the other hand, Comparative Example 1, which does not use the epoxy resin of the present invention, has not only low adhesiveness but also poor chemical resistance and moisture insulation.

【0040】[0040]

【発明の効果】本発明は高温高湿下での絶縁性、レジス
ト剥離やメッキ処理後の接着性に優れた新規なTAB用
テープおよびそれを用いた半導体装置を工業的に提供す
るものであり、本発明のTAB用テープによって高密度
実装用の半導体装置の信頼性を向上させることができ
る。
INDUSTRIAL APPLICABILITY The present invention industrially provides a novel TAB tape having excellent insulating properties under high temperature and high humidity and adhesiveness after resist stripping and plating treatment and a semiconductor device using the same. The TAB tape of the present invention can improve the reliability of a semiconductor device for high-density mounting.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明のTAB用接着剤付きテープを加工して
得られた、半導体集積回路搭載前のパターンテープの一
態様の斜視図。
FIG. 1 is a perspective view of one embodiment of a pattern tape before mounting a semiconductor integrated circuit, obtained by processing a tape with an adhesive for TAB of the present invention.

【図2】本発明のTAB用接着剤付きテープを用いた半
導体装置の一態様の断面図。
FIG. 2 is a cross-sectional view of one embodiment of a semiconductor device using the tape with an adhesive for TAB of the present invention.

【図3】本発明のTAB用接着剤付きテープを用いた半
導体装置(BGA)の一態様の断面図。
FIG. 3 is a cross-sectional view of one embodiment of a semiconductor device (BGA) using a tape with an adhesive for TAB of the present invention.

【図4】本発明のTAB用接着剤付きテープを用いた半
導体装置(CSP)の一態様の断面図。
FIG. 4 is a cross-sectional view of one embodiment of a semiconductor device (CSP) using a tape with an adhesive for TAB of the present invention.

【符号の説明】[Explanation of symbols]

1,12,20 可撓性を有する絶縁性フィルム 2,13,21 接着剤 3 スプロケット孔 4 デバイス孔 5,14,22 半導体集積回路接続用の導体 6 インナーリード部 7 アウターリード部 8,15,23 半導体集積回路 9,16,24 封止樹脂 10,17,25 金バンプ 11 保護膜 18,26 ハンダボール 19 補強板 27 ソルダーレジスト 1,12,20 Insulating film having flexibility 2,13,21 Adhesive 3 Sprocket hole 4 Device hole 5,14,22 Conductor for connecting semiconductor integrated circuit 6 Inner lead portion 7 Outer lead portion 8,15, Reference Signs List 23 semiconductor integrated circuit 9, 16, 24 sealing resin 10, 17, 25 gold bump 11 protective film 18, 26 solder ball 19 reinforcing plate 27 solder resist

───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.6 識別記号 庁内整理番号 FI 技術表示箇所 C09J 7/02 JKD C09J 7/02 JKD JKE JKE 163/00 JFM 163/00 JFM 177/06 JGA 177/06 JGA ─────────────────────────────────────────────────── ─── Continuation of front page (51) Int.Cl. 6 Identification code Internal reference number FI Technical display location C09J 7/02 JKD C09J 7/02 JKD JKE JKE 163/00 JFM 163/00 JFM 177/06 JGA 177 / 06 JGA

Claims (7)

【特許請求の範囲】[Claims] 【請求項1】可撓性を有する有機絶縁性フィルム上に、
接着剤層および保護フィルム層を有する積層体から構成
されるTAB用接着剤付きテープにおいて、該接着剤層
が熱可塑性樹脂(A)およびエポキシ樹脂(B)を含有
し、前記エポキシ樹脂(B)が、下記式(I)で表され
る骨格を有するエポキシ樹脂(b)を必須成分として含
有することを特徴とするTAB用接着剤付きテープ。 【化1】 (ただし、R1〜R8のうち2つは2,3−エポキシプ
ロポキシ基であり、残りは水素原子、C1〜C4の低級
アルキル基またはハロゲン原子を示す。)
1. An organic insulating film having flexibility,
An adhesive tape for TAB comprising a laminate having an adhesive layer and a protective film layer, wherein the adhesive layer contains a thermoplastic resin (A) and an epoxy resin (B), and the epoxy resin (B) is used. Is a tape with an adhesive for TAB, which contains an epoxy resin (b) having a skeleton represented by the following formula (I) as an essential component. Embedded image (However, two of R1 to R8 are 2,3-epoxypropoxy groups, and the rest are hydrogen atoms, C1 to C4 lower alkyl groups or halogen atoms.)
【請求項2】熱可塑性樹脂(A)が炭素数36のジカル
ボン酸を必須構成成分として含有するポリアミド樹脂
(a)であることを特徴とする請求項1記載のTAB用
接着剤付きテープ。
2. The adhesive tape for TAB according to claim 1, wherein the thermoplastic resin (A) is a polyamide resin (a) containing a dicarboxylic acid having 36 carbon atoms as an essential constituent.
【請求項3】熱可塑性樹脂(A)が炭素数36のジカル
ボン酸を必須構成成分として含有するポリアミド樹脂
(a)であって、かつアミン価が1以上3未満のポリア
ミド樹脂(a’)であることを特徴とする請求項1およ
び2記載のTAB用接着剤付きテープ。
3. A thermoplastic resin (A) is a polyamide resin (a) containing a dicarboxylic acid having 36 carbon atoms as an essential constituent component, and a polyamide resin (a ') having an amine value of 1 or more and less than 3. The tape with an adhesive for TAB according to claim 1 or 2, wherein
【請求項4】接着剤層がさらにフェノール樹脂(C)を
含有することを特徴とする請求項1記載のTAB用接着
剤付きテープ。
4. The tape with an adhesive for TAB according to claim 1, wherein the adhesive layer further contains a phenol resin (C).
【請求項5】可撓性を有する有機絶縁性フィルムがポリ
イミドからなるフィルムであることを特徴とする請求項
1記載のTAB用接着剤付きテープ。
5. The adhesive tape for TAB according to claim 1, wherein the organic insulating film having flexibility is a film made of polyimide.
【請求項6】請求項1〜5のいずれか記載のTAB用接
着剤付きテープを用いた半導体接続基板。
6. A semiconductor connection board using the tape with an adhesive for TAB according to claim 1.
【請求項7】請求項1〜5記載のTAB用接着剤付きテ
ープを用いた半導体装置。
7. A semiconductor device using the tape with an adhesive for TAB according to claim 1.
JP03479697A 1996-02-19 1997-02-19 Tape with adhesive for TAB, semiconductor connection substrate, and semiconductor device Expired - Lifetime JP3503392B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP03479697A JP3503392B2 (en) 1996-02-19 1997-02-19 Tape with adhesive for TAB, semiconductor connection substrate, and semiconductor device

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP3050196 1996-02-19
JP8-30501 1996-02-19
JP03479697A JP3503392B2 (en) 1996-02-19 1997-02-19 Tape with adhesive for TAB, semiconductor connection substrate, and semiconductor device

Publications (2)

Publication Number Publication Date
JPH09289230A true JPH09289230A (en) 1997-11-04
JP3503392B2 JP3503392B2 (en) 2004-03-02

Family

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Country Link
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010031220A (en) * 2008-06-26 2010-02-12 Toagosei Co Ltd Adhesive composition, cover lay film using it, and flexible copper-clad laminate

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010031220A (en) * 2008-06-26 2010-02-12 Toagosei Co Ltd Adhesive composition, cover lay film using it, and flexible copper-clad laminate

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