JPH09283649A - Electronic component housing package - Google Patents

Electronic component housing package

Info

Publication number
JPH09283649A
JPH09283649A JP8620896A JP8620896A JPH09283649A JP H09283649 A JPH09283649 A JP H09283649A JP 8620896 A JP8620896 A JP 8620896A JP 8620896 A JP8620896 A JP 8620896A JP H09283649 A JPH09283649 A JP H09283649A
Authority
JP
Japan
Prior art keywords
frequency transmission
insulating substrate
transmission line
lid member
electronic component
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8620896A
Other languages
Japanese (ja)
Other versions
JP3323056B2 (en
Inventor
Chihiro Makihara
千尋 牧原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kyocera Corp
Original Assignee
Kyocera Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kyocera Corp filed Critical Kyocera Corp
Priority to JP8620896A priority Critical patent/JP3323056B2/en
Publication of JPH09283649A publication Critical patent/JPH09283649A/en
Application granted granted Critical
Publication of JP3323056B2 publication Critical patent/JP3323056B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
    • H01L2924/301Electrical effects
    • H01L2924/3011Impedance

Landscapes

  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)

Abstract

PROBLEM TO BE SOLVED: To adhere moisture to a high-frequency transmission line and prevent changes in impedance of a micro strip line, by setting the distance between the surface of a high-frequency transmission line housed inside of a space formed by an insulating board and a first cover member and the inner surface of the first cover member to a predetermined value or greater. SOLUTION: A bowl-like first cover member 7 is joined with the upper surface of an insulating board 1 via a first sealing member 8, and a high-frequency transmission line 2 is hermetically housed in an inner space formed by the insulating board 1 and the first cover member 7. Therefore, moisture contained in the atmosphere is adhered to the high-frequency transmission line 2, thereby enabling effective prevention of generation of any change in impedance of a micro strip line formed by an earthing conductor 6 arranged within the insulating board 1 and the high-frequency transmission line 2. Also, since the distance L between the inner surface of the first cover member 7 and the surface of the high-frequency transmission line 2 is set to 200μm or greater, the dielectric constant of the first cover member 7 does not affect the high-frequency transmission line 2 and the micro strip line may be set to a desired value.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【発明の属する技術分野】本発明は携帯電話等の通信機
器に搭載される電子部品を収容するために使用される電
子部品収納用パッケージに関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electronic component storage package used for storing electronic components mounted in communication equipment such as mobile phones.

【0002】[0002]

【従来の技術】従来、携帯電話機等の通信機器には多数
の電子装置が組み込まれている。かかる携帯電話機等の
通信機器は近時、小型化、高機能化が急激に進んでお
り、これに搭載される各電子装置も小型化、多機能化が
要求され、同時に電子装置に使用される電子部品収納用
パッケージも小型、多機能化が要求されるようになって
きた。
2. Description of the Related Art Conventionally, a large number of electronic devices are incorporated in communication equipment such as mobile phones. In recent years, communication devices such as mobile phones have been rapidly reduced in size and increased in functionality, and electronic devices mounted therein are also required to be downsized and multifunctional, and are used in electronic devices at the same time. There is a growing demand for electronic component storage packages that are smaller and have more functions.

【0003】例えば、携帯電話機の送信と受信とを切り
換えるSAW(弾性表面波素子)フィルターを使用した
デュプレクサは一般に、図2に示すように、内部に接地
導体22を有し、一主面側に高周波伝送路23を、他主
面側にSAWフィルターが搭載収容される2つの凹部2
4を有する酸化アルミニウム質焼結体等の電気絶縁材料
から成る絶縁基板21と、該絶縁基板21の他主面側に
取着され、前記SAWフィルターが載置収容される2つ
の凹部24を塞ぐ蓋部材25とから成る電子部品収納用
パッケージを準備し、該電子部品収納用パッケージの絶
縁基板21に設けた2つの凹部24の各々に送信用SA
Wフィルター26aと受信用SAWフィルター26bを
収容するとともに各SAWフィルター26a、26bの
電極を所定のメタライズ配線層27にボンディングワイ
ヤ28を介して接続し、しかる後、前記絶縁基板21に
蓋部材25をガラス、樹脂、ロウ材等の封止部材を介し
て接合させ、絶縁基板21と蓋部材25とから成る容器
内部に送受信用SAWフィルター26a、26bを気密
に収容することによって製作されている。
For example, as shown in FIG. 2, a duplexer using a SAW (surface acoustic wave element) filter for switching between transmission and reception of a mobile phone generally has a ground conductor 22 inside and a main surface side. The high-frequency transmission line 23 has two recesses 2 in which the SAW filter is mounted and accommodated on the other main surface side.
And an insulating substrate 21 made of an electrically insulating material such as an aluminum oxide sintered body having No. 4 and two concave portions 24 attached to the other main surface side of the insulating substrate 21 and in which the SAW filter is mounted and accommodated. An electronic component storing package including a lid member 25 is prepared, and the transmitting SA is provided in each of the two recesses 24 provided in the insulating substrate 21 of the electronic component storing package.
The W filter 26a and the receiving SAW filter 26b are housed, and the electrodes of the SAW filters 26a and 26b are connected to a predetermined metallized wiring layer 27 via bonding wires 28. Thereafter, the insulating substrate 21 is covered with a lid member 25. The SAW filters 26a and 26b for transmission / reception are hermetically housed inside a container formed of the insulating substrate 21 and the lid member 25 by joining them through a sealing member such as glass, resin, or brazing material.

【0004】かかるデュプレクサは送信用SAWフィル
ター26a及び受信用SAWフィルター26bの通過域
インピーダンスが異なることから例えば、受信用SAW
フィルター26bに、高周波伝送路23と接地導体22
との間に絶縁基板21の一部を挟むことによって形成さ
れるマイクロストリップラインを接続させ、位相回転を
行わせることによって送受信用SAWフィルター26
a、26bの各々のインピーダンスを回路インピーダン
スに整合させるようにしている。
In such a duplexer, since the transmitting SAW filter 26a and the receiving SAW filter 26b have different pass band impedances, for example, a receiving SAW is used.
The filter 26b includes a high frequency transmission line 23 and a ground conductor 22.
A microstrip line formed by sandwiching a part of the insulating substrate 21 between and is connected to the SAW filter 26 for transmission and reception by performing phase rotation.
The impedances of a and 26b are matched with the circuit impedance.

【0005】尚、前記電子部品収納用パッケージにおい
ては、絶縁基板21の一主面側に設けた高周波伝送路2
3がタングステンやモリブデン等の高融点金属材料で形
成されており、その表面に電気抵抗値が極めて小さい金
がメッキ法により被着されている。
In the package for housing electronic components, the high frequency transmission line 2 provided on the one main surface side of the insulating substrate 21.
3 is made of a refractory metal material such as tungsten or molybdenum, and gold having an extremely small electric resistance value is deposited on the surface by a plating method.

【0006】また前記高周波伝送路23はエポキシ樹脂
等の有機樹脂から成る被覆材29によって被覆されてお
り、高周波伝送路23が酸化腐食するのを有効に防止す
るようになっている。
The high-frequency transmission line 23 is covered with a coating material 29 made of an organic resin such as epoxy resin, so that the high-frequency transmission line 23 is effectively prevented from being oxidized and corroded.

【0007】[0007]

【発明が解決しようとする課題】しかしながら、この従
来の電子部品収納用パッケージにおいては、絶縁基板の
一主面側に設けた高周波伝送路が有機樹脂から成る被覆
材で被覆されており、該被覆材を形成する有機樹脂は耐
湿性に劣ることから大気中に含まれる水分が浸透し易
く、被覆材中に水分が浸透すると被覆材の比誘電率が変
化して高周波伝送路と接地導体とで形成されるマイクロ
ストリップラインのインピーダンスが変化し、送受信用
SAWフィルターの各々のインピーダンスを回路インピ
ーダンスに正確に整合させることができないという欠点
を有していた。
However, in this conventional package for housing electronic components, the high-frequency transmission line provided on the one main surface side of the insulating substrate is covered with a covering material made of an organic resin. Since the organic resin that forms the material has poor moisture resistance, the moisture contained in the atmosphere easily penetrates, and when the moisture penetrates into the coating material, the relative permittivity of the coating material changes and the high-frequency transmission line and the ground conductor are separated. There is a drawback that the impedance of the formed microstrip line changes, and the impedance of each of the transmitting and receiving SAW filters cannot be accurately matched to the circuit impedance.

【0008】[0008]

【課題を解決するための手段】本発明は、内部に接地導
体を有し、一主面側に高周波伝送路を、他主面側に電子
部品が搭載される搭載部を有する絶縁基板と、該絶縁基
板の一主面側に第1封止部材を介して取着され、内側に
高周波伝送路を収容する第1蓋部材と、前記絶縁基板の
他主面側に第2封止部材を介して取着され、電子部品搭
載部の電子部品を内側に収容する第2蓋部材とから成る
電子部品収納用パッケージであって、前記高周波伝送路
の表面と第1蓋部材の内表面との間の距離が200μm
以上であることを特徴とするのである。
According to the present invention, there is provided an insulating substrate having a grounding conductor inside, a high frequency transmission path on one main surface side, and a mounting portion on which another electronic surface is mounted. A first lid member is attached to one main surface side of the insulating substrate via a first sealing member and accommodates a high-frequency transmission path inside, and a second sealing member is provided on the other main surface side of the insulating substrate. A second lid member that is attached via the second lid member that houses the electronic component of the electronic component mounting portion inside, and is a package for storing an electronic component, wherein a surface of the high-frequency transmission path and an inner surface of the first lid member are provided. The distance between them is 200 μm
The above is the feature.

【0009】また本発明は、前記第1封止部材の溶融温
度が第2封止部材の溶融温度よりも高いことを特徴とす
るものである。
The present invention is also characterized in that the melting temperature of the first sealing member is higher than the melting temperature of the second sealing member.

【0010】本発明の電子部品収納用パッケージによれ
ば、絶縁基板の一主面側に設けた高周波伝送路を、絶縁
基板と第1蓋部材とで形成される空所の内側に収容した
ことから高周波伝送路に大気中に含まれる水分等が付着
し、絶縁基板の内部に配した接地導体と高周波伝送路と
で形成されるマイクロストリップラインのインピーダン
スに変化を招来することはない。
According to the electronic component storage package of the present invention, the high-frequency transmission line provided on the one main surface side of the insulating substrate is stored inside the void formed by the insulating substrate and the first lid member. Therefore, moisture contained in the atmosphere does not adhere to the high-frequency transmission line, and the impedance of the microstrip line formed by the ground conductor arranged inside the insulating substrate and the high-frequency transmission line does not change.

【0011】また高周波伝送路と第1蓋部材の内表面と
の間の距離を200μm以上としたことから第1蓋部材
の比誘電率が高周波伝送路に影響することはなく、これ
によっても絶縁基板の内部に配した接地導体と高周波伝
送路とで形成されるマイクロストリップラインのインピ
ーダンスに変化を招来することがない。
Further, since the distance between the high frequency transmission line and the inner surface of the first lid member is 200 μm or more, the relative permittivity of the first lid member does not affect the high frequency transmission line, which also results in insulation. There is no change in the impedance of the microstrip line formed by the ground conductor and the high-frequency transmission line arranged inside the substrate.

【0012】更に前記絶縁基板の一主面側に第1蓋部材
を取着接合する第1封止部材の溶融温度を絶縁基板の他
主面側に第2蓋部材を取着接合する第2封止部材の溶融
温度より高くしたことから、絶縁基板に電子部品を搭載
した後、絶縁基板の他主面側に第2蓋部材を第2封止部
材を介して取着接合させ、絶縁基板と第2蓋部材とで形
成される容器内部に電子部品を気密に封止する際、第2
封止部材を加熱溶融させる熱によって絶縁基板に第1蓋
部材を取着接合させている第1封止部材が軟化、溶融
し、絶縁基板と第1蓋部材とで形成される容器の気密封
止が破れることはなく、これによって絶縁基体と第1蓋
部材とで形成される容器内部に高周波伝送路を、絶縁基
体と第2蓋部材とで形成される容器内部に電子部品を各
々、気密に収容し、電子装置として所望の機能を長期間
にわたり発揮させることが可能となる。
Further, the melting temperature of the first sealing member for attaching and joining the first lid member to the one main surface side of the insulating substrate is the second for attaching and joining the second lid member to the other main surface side of the insulating substrate. Since the temperature is higher than the melting temperature of the sealing member, after mounting the electronic component on the insulating substrate, the second lid member is attached and bonded to the other main surface side of the insulating substrate via the second sealing member. When airtightly sealing the electronic component inside the container formed by the second lid member and the second lid member,
The first sealing member that attaches and bonds the first lid member to the insulating substrate is softened and melted by the heat of heating and melting the sealing member, and the container formed by the insulating substrate and the first lid member is hermetically sealed. Therefore, the high-frequency transmission line is formed inside the container formed by the insulating base and the first lid member, and the electronic component is formed inside the container formed by the insulating base and the second lid member in an airtight manner. It is possible to store a desired function as an electronic device for a long period of time.

【0013】[0013]

【発明の実施の形態】次に、本発明を添付図面に基づき
詳細に説明する。図1は、本発明の電子部品収納用パッ
ケージを携帯電話機の送信と受信とを切り換えるための
デュプレクサに使用した場合の一実施例を示し、1は絶
縁基板、2は高周波伝送路である。
Next, the present invention will be described in detail with reference to the accompanying drawings. FIG. 1 shows an embodiment in which the electronic component storing package of the present invention is used as a duplexer for switching between transmission and reception of a mobile telephone, 1 is an insulating substrate, and 2 is a high frequency transmission line.

【0014】前記絶縁基板1はその下面に送受信用のS
AWフィルターが搭載収容される2つの凹部1aを有
し、該凹1aの各々には送信用のSAWフィルター3a
と受信用のSAWフィルター3bが接着剤を介して取着
固定される。
On the lower surface of the insulating substrate 1, there is an S for transmission and reception.
It has two recesses 1a in which an AW filter is mounted and housed, and each of the recesses 1a has a SAW filter 3a for transmission.
The receiving SAW filter 3b is attached and fixed via an adhesive.

【0015】前記絶縁基体1は酸化アルミニウム質焼結
体、ムライト質焼結体、窒化アルミニウム質焼結体、炭
化珪素質焼結体、ガラスセラミックス焼結体等の電気絶
縁材料から成り、例えば、酸化アルミニウム質焼結体か
ら成る場合には、酸化アルミニウム、酸化珪素、酸化カ
ルシウム、酸化マグネシウム等の原料粉末に適当なバイ
ンダー、溶剤を添加混合して泥漿状となすとともにこれ
を従来周知のドクターブレード法を採用してシート状と
なすことによってセラミックグリーンシートを得、しか
る後、前記セラミックグリーンシートを打ち抜き加工法
により適当な形状に打ち抜くとともに必要に応じて複数
枚を積層し、最後に前記セラミックグリーンシートを還
元雰囲気中、約1600℃の温度で焼成することによっ
て製作される。
The insulating substrate 1 is made of an electrically insulating material such as an aluminum oxide sintered body, a mullite sintered body, an aluminum nitride sintered body, a silicon carbide sintered body, and a glass ceramic sintered body. When it is made of an aluminum oxide sintered body, it is made into a sludge form by adding and mixing an appropriate binder and solvent to raw material powders of aluminum oxide, silicon oxide, calcium oxide, magnesium oxide, etc. A ceramic green sheet is obtained by adopting the method to form a sheet, and thereafter, the ceramic green sheet is punched into an appropriate shape by a punching method and, if necessary, a plurality of sheets are laminated, and finally the ceramic green sheet. It is produced by firing the sheet at a temperature of about 1600 ° C. in a reducing atmosphere.

【0016】また前記絶縁基板1は、送受信用のSAW
フィルター3a、3bが搭載収容される2つの凹部1a
周辺から下面にかけて複数個のメタライズ配線層4が被
着形成されており、該メタライズ配線層4の凹部1a周
辺部位には送受信用SAWフィルター3a、3bの各電
極がボンディングワイヤ5を介して電気的に接続され、
また絶縁基板1の下面に導出した部位は外部電気回路に
接続される。
The insulating substrate 1 is a SAW for transmission / reception.
Two recesses 1a in which the filters 3a and 3b are mounted and housed
A plurality of metallized wiring layers 4 are adhered and formed from the periphery to the lower surface, and the electrodes of the SAW filters 3a and 3b for transmission and reception are electrically connected to the recessed portion 1a of the metallized wiring layer 4 via bonding wires 5. Connected to the
Further, the part led out to the lower surface of the insulating substrate 1 is connected to an external electric circuit.

【0017】前記メタライズ配線層4はタングステン、
モリブデン等の高融点金属粉末から成り、該タングステ
ン等の高融点金属粉末に適当なバインダー、溶剤を添加
混合して得た金属ペーストを前記絶縁基板1となるセラ
ミックグリーンシートに予め従来周知のスクリーン印刷
法により所定パターンに印刷塗布しておくことによって
絶縁基板1の凹部1a周辺から下面にかけて被着形成さ
れる。
The metallized wiring layer 4 is made of tungsten,
A metal paste made of a high melting point metal powder such as molybdenum and obtained by adding and mixing an appropriate binder and a solvent to the high melting point metal powder such as tungsten is previously screen-printed on the ceramic green sheet serving as the insulating substrate 1 in advance. By printing and applying a predetermined pattern by a method, the insulating substrate 1 is adhered and formed from the periphery of the recess 1a to the lower surface.

【0018】尚、前記メタライズ配線層4はその表面に
ニッケル層及び金層が順次、メッキ法を採用することに
よって被着されており、該ニッケル層及び金層によって
メタライズ配線層4へのボンディングワイヤ5の接合を
強固なものとしている。
A nickel layer and a gold layer are sequentially deposited on the surface of the metallized wiring layer 4 by adopting a plating method, and a bonding wire to the metallized wiring layer 4 is formed by the nickel layer and the gold layer. The connection of No. 5 is made strong.

【0019】更に前記絶縁基板1の上面には高周波伝送
路2が、また内部には接地導体6が埋設されており、高
周波伝送路2と接地導体6との間に絶縁基板1の一部を
挟持させることによってマイクロストリップラインが形
成されている。このマイクロストリップラインは、例え
ば受信用のSAWフィルター3bに接続され、位相回転
を行わせることによって送信用のSAWフィルター3a
と受信用のSAWフィルター3bの通過域インピーダン
スが異なるとしてもその各々をともに同じ回路インピー
ダンスに整合させるようになっている。
Further, a high-frequency transmission line 2 is embedded on the upper surface of the insulating substrate 1, and a ground conductor 6 is embedded therein. A part of the insulating substrate 1 is interposed between the high-frequency transmission line 2 and the ground conductor 6. A microstrip line is formed by sandwiching. This microstrip line is connected to, for example, a SAW filter 3b for reception, and by performing phase rotation, the SAW filter 3a for transmission.
Even if the pass band impedances of the receiving SAW filter 3b are different from each other, both of them are matched to the same circuit impedance.

【0020】前記絶縁基板1の上面に形成されている高
周波伝送路2及び絶縁基板1内部に埋設されている接地
導体6はその各々がタングステン、モリブデン等の高融
点金属粉末から成り、上述したメタライズ配線層4と同
様の方法によって、具体的にはタングステン等の高融点
金属粉末に適当なバインダー、溶剤を添加混合して得た
金属ペーストを準備するとともにこれを絶縁基板1とな
るセラミックグリーンシートに予め従来周知のスクリー
ン印刷法により所定パターンに印刷塗布しておくことに
よって高周波伝送路2は絶縁基板1の上面に、接地導体
6は絶縁基板1の内部から絶縁基板1の下面にかけて被
着形成される。
The high frequency transmission line 2 formed on the upper surface of the insulating substrate 1 and the grounding conductor 6 embedded in the insulating substrate 1 are each made of a refractory metal powder such as tungsten or molybdenum, and are metallized as described above. By a method similar to that for the wiring layer 4, specifically, a metal paste obtained by adding and mixing an appropriate binder and solvent to a refractory metal powder such as tungsten is prepared, and this is used as a ceramic green sheet to be the insulating substrate 1. The high-frequency transmission line 2 is adhered to the upper surface of the insulating substrate 1 and the ground conductor 6 is adhered from the inside of the insulating substrate 1 to the lower surface of the insulating substrate 1 by printing and applying a predetermined pattern by a screen printing method known in the prior art. It

【0021】前記高周波伝送路2はまたその表面に金等
の電気抵抗率が7μΩ・cm以下の金属材料から成る被
膜2aが例えば、電解メッキ法を採用することによって
被着されており、該被膜2aによって高周波伝送路2の
電気抵抗値を極めて小さいものとし、高周波伝送路2に
高周波の送信信号もしくは受信信号を流しても伝搬損失
が極めて小さいものとなるようになっている。
On the surface of the high-frequency transmission line 2, a coating 2a made of a metal material having an electric resistivity of 7 μΩ · cm or less such as gold is deposited by using, for example, an electrolytic plating method. The electric resistance value of the high-frequency transmission line 2 is made extremely small by the 2a, and the propagation loss is made extremely small even when a high-frequency transmission signal or a reception signal is passed through the high-frequency transmission line 2.

【0022】更に前記絶縁基体1の上面には、該上面に
被着形成されている高周波伝送路2を内側に収容するよ
うに椀状の第1蓋部材7が第1封止部材8を介して接合
されており、絶縁基板1と第1蓋部材7とで形成される
内部空所に高周波伝送路2が気密に収容されている。
Further, a bowl-shaped first lid member 7 is provided on the upper surface of the insulating substrate 1 via a first sealing member 8 so as to accommodate the high frequency transmission line 2 formed on the upper surface inside. The high frequency transmission line 2 is hermetically housed in the internal space formed by the insulating substrate 1 and the first lid member 7.

【0023】前記第1蓋部材7は例えば、前記絶縁基板
1と同じ電気絶縁材料から成り、内側に高周波伝送路2
を気密に収容することによって高周波伝送路2に大気中
に含まれる水分等が付着し、絶縁基板1の内部に配した
接地導体6と高周波伝送路2とで形成されるマイクロス
トリップラインのインピーダンスに変化が招来するのを
有効に防止する作用を為す。
The first lid member 7 is made of, for example, the same electrically insulating material as the insulating substrate 1, and has the high frequency transmission line 2 inside.
Since airtightly accommodates the moisture contained in the atmosphere to the high frequency transmission line 2, the impedance of the microstrip line formed by the ground conductor 6 disposed inside the insulating substrate 1 and the high frequency transmission line 2 is increased. It effectively prevents changes from being introduced.

【0024】また前記第1蓋部材7はその内表面と絶縁
基板1の上面に設けた高周波伝送路2の表面との距離L
が200μm以上となっており、これによって第1蓋部
材7の比誘電率が高周波伝送路2に影響することはな
く、絶縁基板1の内部に配した接地導体6と高周波伝送
路2とで形成されるマイクロストリップラインのインピ
ーダンスを所望する値となすことができる。
The distance L between the inner surface of the first lid member 7 and the surface of the high frequency transmission line 2 provided on the upper surface of the insulating substrate 1 is L.
Is 200 μm or more, so that the relative permittivity of the first lid member 7 does not affect the high frequency transmission line 2 and is formed by the ground conductor 6 and the high frequency transmission line 2 arranged inside the insulating substrate 1. The impedance of the formed microstrip line can be set to a desired value.

【0025】尚、前記第1蓋部材7の内表面と絶縁基板
1の上面に設けた高周波伝送路2の表面との距離Lが2
00μm未満となると高周波伝送路2が第1蓋部材7の
比誘電率の影響を受けて絶縁基板1の内部に配した接地
導体6と高周波伝送路2とで形成されるマイクロストリ
ップラインのインピーダンスが急激に変化し、所望する
値のインピーダンスを正確に得ることができなくなる。
従って、前記第1蓋部材7の内表面と絶縁基板1の上面
に設けた高周波伝送路2の表面との距離Lは200μm
以上に特定される。
The distance L between the inner surface of the first lid member 7 and the surface of the high frequency transmission line 2 provided on the upper surface of the insulating substrate 1 is 2
When the thickness is less than 00 μm, the high frequency transmission line 2 is affected by the relative permittivity of the first lid member 7, and the impedance of the microstrip line formed by the ground conductor 6 and the high frequency transmission line 2 arranged inside the insulating substrate 1 is reduced. It changes abruptly, and it becomes impossible to accurately obtain a desired impedance.
Therefore, the distance L between the inner surface of the first lid member 7 and the surface of the high frequency transmission line 2 provided on the upper surface of the insulating substrate 1 is 200 μm.
Specified above.

【0026】また前記第1蓋部材7は第1封止部材8を
介して絶縁基板1の上面に内側に高周波伝送路2を収容
するようにして接合されており、該第1封止部材8は後
述する絶縁基板1に第2蓋部材9を取着接合させる第2
封止部材10よりも溶融温度が高い、例えば、酸化鉛3
0〜50重量%、フッ化鉛10〜20重量%、酸化ビス
マス3〜13重量%、酸化ホウ素1〜5重量%、酸化亜
鉛1〜5重量%、チタン酸鉛系化合物25〜45重量%
から成るガラスが好適に使用される。
Further, the first lid member 7 is joined to the upper surface of the insulating substrate 1 via the first sealing member 8 so as to accommodate the high frequency transmission line 2 inside, and the first sealing member 8 is formed. Is a second part for attaching and joining the second lid member 9 to the insulating substrate 1 described later.
The melting temperature is higher than that of the sealing member 10, for example, lead oxide 3
0 to 50% by weight, lead fluoride 10 to 20% by weight, bismuth oxide 3 to 13% by weight, boron oxide 1 to 5% by weight, zinc oxide 1 to 5% by weight, lead titanate-based compound 25 to 45% by weight
Glass consisting of is preferably used.

【0027】前記第1蓋部材7の第1封止部材8を介し
ての絶縁基板1への取着接合は、例えば、上述の酸化鉛
30〜50重量%、フッ化鉛10〜20重量%、酸化ビ
スマス3〜13重量%、酸化ホウ素1〜5重量%、酸化
亜鉛1〜5重量%、チタン酸鉛系化合物25〜45重量
%等から成るガラス粉末に適当な有機溶剤、溶媒を添加
混合して得たガラスペーストを予め第1蓋部材7の下面
側にスクリーン印刷法等により印刷塗布しておき、次に
絶縁基板1の上面に第1蓋部材7を被着させたガラスペ
ーストが絶縁基板1上面に接触するようにして載置さ
せ、しかる後、これを約320〜400℃の温度に加熱
し、ガラスペースト中の有機溶剤、溶媒を焼失させると
ともにガラス粉末を加熱溶融させることによって行われ
る。
The attachment and joining of the first lid member 7 to the insulating substrate 1 via the first sealing member 8 is carried out by, for example, 30 to 50% by weight of lead oxide and 10 to 20% by weight of lead fluoride. , Bismuth oxide 3 to 13% by weight, boron oxide 1 to 5% by weight, zinc oxide 1 to 5% by weight, lead titanate compound 25 to 45% by weight, etc. The glass paste thus obtained is previously applied by printing on the lower surface side of the first lid member 7 by a screen printing method or the like, and then the glass paste on which the first lid member 7 is adhered is insulated on the upper surface of the insulating substrate 1. The substrate 1 is placed in contact with the upper surface of the substrate 1 and then heated to a temperature of about 320 to 400 ° C. to burn off the organic solvent and solvent in the glass paste and heat and melt the glass powder. Be seen.

【0028】かくしてこの電子部品収納用パッケージに
よれば、絶縁基板1の下面に設けた2つの凹部1aに送
信用SAWフィルター3aと受信用SAWフィルター3
bとを接着剤を介して接着固定するとともに各SAWフ
ィルター3a、3bの電極を所定のメタライズ配線層4
にボンディングワイヤ5を介して接続し、しかる後、前
記絶縁基板1の下面に第2蓋部材9を第2封止部材10
を介して取着接合させ、絶縁基板1と第2蓋部材9とで
形成される容器内部に送受信用SAWフィルター3a、
3bを気密に収容することによって製品としてのデュプ
レクサーとなる。
Thus, according to this electronic component storing package, the transmitting SAW filter 3a and the receiving SAW filter 3 are provided in the two recesses 1a provided on the lower surface of the insulating substrate 1.
b is bonded and fixed via an adhesive, and the electrodes of the SAW filters 3a and 3b are fixed to the predetermined metallized wiring layer 4
To the lower surface of the insulating substrate 1 with the second lid member 9 and the second sealing member 10.
The SAW filter 3a for transmission / reception is attached inside the container formed by the insulating substrate 1 and the second lid member 9 by attaching and bonding via the
By air-tightly housing 3b, it becomes a duplexer as a product.

【0029】前記絶縁基板1の下面側に取着接合される
第2蓋部材9は、例えば鉄ーニッケルーコバルト合金や
鉄ーニッケル合金等の金属材料、或いは絶縁基板1と同
様の酸化アルミニウム質焼結体等の無機絶縁材料で形成
され、金属材料で形成される場合には鉄ーニッケルーコ
バルト合金等のインゴット(塊)に圧延加工法や打ち抜
き加工法等の従来周知の金属加工法を施すことによって
作成され、また無機絶縁材料で形成される場合には前述
の絶縁基板1と同様の方法によって製作される。
The second lid member 9 attached to the lower surface side of the insulating substrate 1 is made of, for example, a metal material such as iron-nickel-cobalt alloy or iron-nickel alloy, or an aluminum oxide sintered material similar to the insulating substrate 1. When formed of an inorganic insulating material such as a tie, and when formed of a metal material, an ingot (lump) of iron-nickel-cobalt alloy or the like is subjected to a conventionally known metal processing method such as a rolling method or a punching method. In the case of being formed by the above method, or formed of an inorganic insulating material, it is manufactured by the same method as the above-mentioned insulating substrate 1.

【0030】また前記第2蓋部材9を絶縁基板1の下面
側に取着接合する第2封止部材10は例えば、金ー錫合
金や金ーゲルマニウム合金、錫ー鉛合金等の前記第1封
部材8の溶融温度より低い溶融温度を有する材料が好適
に使用され、第2封止部材10の溶融温度を第1封止部
材8の溶融温度より低くしたことから絶縁基板1に第2
蓋部材9を第2封止部材10を介して取着接合させ、絶
縁基板1と第2蓋部材9とで形成される容器内部に送受
信用のSAWフィルター3a、3bを気密に封止する
際、第2封止部材10を加熱溶融させる熱によって絶縁
基板1に第1蓋部材7を取着接合させている第1封止部
材8が軟化、溶融し、絶縁基板1と第1蓋部材7とで形
成される容器の気密封止が破れることはなく、これによ
って絶縁基体1と第1蓋部材7とで形成される容器内部
に高周波伝送路2を、絶縁基体1と第2蓋部材9とで形
成される容器内部に送受信用のSAWフィルター3a、
3bを各々、気密に収容し、電子装置として所望の機能
を長期間にわたり発揮させることが可能となる。
The second sealing member 10 for attaching and joining the second lid member 9 to the lower surface side of the insulating substrate 1 is, for example, the first sealing member made of gold-tin alloy, gold-germanium alloy, tin-lead alloy or the like. A material having a melting temperature lower than the melting temperature of the sealing member 8 is preferably used, and the melting temperature of the second sealing member 10 is set lower than the melting temperature of the first sealing member 8.
When the lid member 9 is attached and joined via the second sealing member 10 and the SAW filters 3a and 3b for transmission and reception are hermetically sealed inside the container formed by the insulating substrate 1 and the second lid member 9. , The first sealing member 8 that attaches and joins the first lid member 7 to the insulating substrate 1 is softened and melted by the heat of heating and melting the second sealing member 10, and the insulating substrate 1 and the first lid member 7 The airtight seal of the container formed by does not break, so that the high-frequency transmission line 2 is provided inside the container formed by the insulating base 1 and the first lid member 7, the insulating base 1 and the second lid member 9 are formed. SAW filter 3a for transmission and reception inside the container formed by
It becomes possible to house 3b in an airtight manner and to exhibit desired functions as an electronic device for a long period of time.

【0031】尚、本発明は上述の実施例に限定されるも
のではなく、本発明の要旨を逸脱しない範囲であれば種
々の変更は可能であり、例えば上述の実施例では2つの
SAWフィルターを用いた携帯電話機に使用されるデュ
プレクサーを例に採って説明したが、これに限定される
ものではなく、内部に接地導体を有する絶縁基板の一主
面側に高周波伝送路を有し、他主面側に電子部品が搭載
されて形成される電圧制御型発振器等の他の電子装置に
も適用可能である。
The present invention is not limited to the above-mentioned embodiment, and various modifications can be made without departing from the gist of the present invention. For example, in the above-mentioned embodiment, two SAW filters are used. The duplexer used in the mobile phone used has been described as an example, but the present invention is not limited to this, and the high frequency transmission path is provided on the one main surface side of the insulating substrate having the ground conductor inside, It is also applicable to other electronic devices such as a voltage controlled oscillator formed by mounting electronic components on the main surface side.

【0032】また上述の実施例では絶縁基板1の下面側
に2つの電子部品が搭載収容される凹部1aを形成した
が、これが1つであっても、また3つ以上であってもよ
い。
Further, in the above-mentioned embodiment, the concave portion 1a in which the two electronic components are mounted and accommodated is formed on the lower surface side of the insulating substrate 1, but the number may be one or three or more.

【0033】更に上述の実施例では絶縁基板1の上面側
に椀状の第1蓋部材7を第1封止部材8を介して取着接
合したが、これを絶縁基板1の上面に凹部を設け、第1
蓋部材7を平板状としてもよい。
Further, in the above-described embodiment, the bowl-shaped first lid member 7 is attached and joined to the upper surface side of the insulating substrate 1 via the first sealing member 8. Provided, first
The lid member 7 may have a flat plate shape.

【0034】[0034]

【発明の効果】本発明の電子部品収納用パッケージによ
れば、絶縁基板の一主面側に設けた高周波伝送路を、絶
縁基板と第1蓋部材とで形成される空所の内側に収容し
たことから高周波伝送路に大気中に含まれる水分等が付
着し、絶縁基板の内部に配した接地導体と高周波伝送路
とで形成されるマイクロストリップラインのインピーダ
ンスに変化を招来することはない。
According to the electronic component storage package of the present invention, the high-frequency transmission line provided on the one main surface side of the insulating substrate is stored inside the void formed by the insulating substrate and the first lid member. As a result, moisture contained in the atmosphere does not adhere to the high frequency transmission line, and the impedance of the microstrip line formed by the ground conductor arranged inside the insulating substrate and the high frequency transmission line does not change.

【0035】また高周波伝送路と第1蓋部材の内表面と
の間の距離を200μm以上としたことから第1蓋部材
の比誘電率が高周波伝送路に影響することはなく、これ
によっても絶縁基板の内部に配した接地導体と高周波伝
送路とで形成されるマイクロストリップラインのインピ
ーダンスに変化を招来することがない。
Further, since the distance between the high frequency transmission line and the inner surface of the first lid member is 200 μm or more, the relative permittivity of the first lid member does not affect the high frequency transmission line, which also results in insulation. There is no change in the impedance of the microstrip line formed by the ground conductor and the high-frequency transmission line arranged inside the substrate.

【0036】更に前記絶縁基板の一主面側に第1蓋部材
を取着接合する第1封止部材の溶融温度を絶縁基板の他
主面側に第2蓋部材を取着接合する第2封止部材の溶融
温度より高くしたことから、絶縁基板に電子部品を搭載
した後、絶縁基板の他主面側に第2蓋部材を第2封止部
材を介して取着接合させ、絶縁基板と第2蓋部材とで形
成される容器内部に電子部品を気密に封止する際、第2
封止部材を加熱溶融させる熱によって絶縁基板に第1蓋
部材を取着接合させている第1封止部材が軟化、溶融
し、絶縁基板と第1蓋部材とで形成される容器の気密封
止が破れることはなく、これによって絶縁基体と第1蓋
部材とで形成される容器内部に高周波伝送路を、絶縁基
体と第2蓋部材とで形成される容器内部に電子部品を各
々、気密に収容し、電子装置として所望の機能を長期間
にわたり発揮させることが可能となる。
Further, the melting temperature of the first sealing member for attaching and joining the first lid member to the one main surface side of the insulating substrate is the second for attaching and joining the second lid member to the other main surface side of the insulating substrate. Since the temperature is higher than the melting temperature of the sealing member, after mounting the electronic component on the insulating substrate, the second lid member is attached and bonded to the other main surface side of the insulating substrate via the second sealing member. When airtightly sealing the electronic component inside the container formed by the second lid member and the second lid member,
The first sealing member that attaches and bonds the first lid member to the insulating substrate is softened and melted by the heat of heating and melting the sealing member, and the container formed by the insulating substrate and the first lid member is hermetically sealed. Therefore, the high-frequency transmission line is formed inside the container formed by the insulating base and the first lid member, and the electronic component is formed inside the container formed by the insulating base and the second lid member in an airtight manner. It is possible to store a desired function as an electronic device for a long period of time.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の電子部品収納用パッケージの一実施例
を示す断面図である。
FIG. 1 is a cross-sectional view showing an embodiment of an electronic component storage package according to the present invention.

【図2】従来の電子部品収納用パッケージの断面図であ
る。
FIG. 2 is a sectional view of a conventional electronic component storage package.

【符号の説明】[Explanation of symbols]

1・・・絶縁基板 2・・・・・・高周波伝送路 3a、3b・・電子部品としてのSAWフィルター 6・・・・・・接地導体 7・・・・・・第1蓋部材 8・・・・・・第1封止部材 9・・・・・・第2蓋部材 10・・・・・・第2封止部材 1 ... Insulating substrate 2 ... High-frequency transmission path 3a, 3b ... SAW filter as an electronic component 6 ... Ground conductor 7 ... First lid member 8 ... .... first sealing member 9 ... second lid member 10 ... second sealing member

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】内部に接地導体を有し、一主面側に高周波
伝送路を、他主面側に電子部品が搭載される搭載部を有
する絶縁基板と、該絶縁基板の一主面側に第1封止部材
を介して取着され、内側に高周波伝送路を収容する第1
蓋部材と、前記絶縁基板の他主面側に第2封止部材を介
して取着され、電子部品搭載部の電子部品を内側に収容
する第2蓋部材とから成る電子部品収納用パッケージで
あって、前記高周波伝送路の表面と第1蓋部材の内表面
との間の距離が200μm以上であることを特徴とする
電子部品収納用パッケージ。
1. An insulating substrate having a ground conductor inside, a high-frequency transmission line on one main surface side, and a mounting portion on which the electronic component is mounted on the other main surface side; and one main surface side of the insulating substrate. A first sealing member that is attached to the inside of the first high-frequency transmission path
An electronic component storage package comprising a lid member and a second lid member which is attached to the other main surface side of the insulating substrate via a second sealing member and accommodates the electronic component of the electronic component mounting portion inside. An electronic component storage package, wherein the distance between the surface of the high-frequency transmission path and the inner surface of the first lid member is 200 μm or more.
【請求項2】前記第1封止部材の溶融温度が第2封止部
材の溶融温度よりも高いことを特徴とする請求項1に記
載の電子部品収納用パッケージ。
2. The package for storing electronic components according to claim 1, wherein the melting temperature of the first sealing member is higher than the melting temperature of the second sealing member.
JP8620896A 1996-04-09 1996-04-09 Electronic component storage package Expired - Fee Related JP3323056B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8620896A JP3323056B2 (en) 1996-04-09 1996-04-09 Electronic component storage package

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Application Number Priority Date Filing Date Title
JP8620896A JP3323056B2 (en) 1996-04-09 1996-04-09 Electronic component storage package

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JPH09283649A true JPH09283649A (en) 1997-10-31
JP3323056B2 JP3323056B2 (en) 2002-09-09

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6476463B1 (en) 1998-05-28 2002-11-05 Nec Corporation Microwave integrated circuit multi-chip-module
JP2002359522A (en) * 2001-05-31 2002-12-13 Kinseki Ltd Piezoelectric oscillation and method for manufacturing the same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6476463B1 (en) 1998-05-28 2002-11-05 Nec Corporation Microwave integrated circuit multi-chip-module
JP2002359522A (en) * 2001-05-31 2002-12-13 Kinseki Ltd Piezoelectric oscillation and method for manufacturing the same

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