JPH09283392A - Method and device for laminating substrates - Google Patents

Method and device for laminating substrates

Info

Publication number
JPH09283392A
JPH09283392A JP8088453A JP8845396A JPH09283392A JP H09283392 A JPH09283392 A JP H09283392A JP 8088453 A JP8088453 A JP 8088453A JP 8845396 A JP8845396 A JP 8845396A JP H09283392 A JPH09283392 A JP H09283392A
Authority
JP
Japan
Prior art keywords
substrate
contact
suction
semiconductor substrate
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP8088453A
Other languages
Japanese (ja)
Inventor
Hideji Tanaka
秀治 田中
Yoshio Maeda
佳男 前田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP8088453A priority Critical patent/JPH09283392A/en
Publication of JPH09283392A publication Critical patent/JPH09283392A/en
Withdrawn legal-status Critical Current

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Landscapes

  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

PROBLEM TO BE SOLVED: To materialize a method of laminating two sheets of substrates in condition that there is no flexion or distortion and inner stress does not remain, in a method and a device for laying one on top of the other before joining two sheets of substrates. SOLUTION: An upper mechanism 20 is composed of a support disc 21 supported capable of ascent and descent by a drive means, suction heads 22 and 23 fixed to the bottom of this support disc 21, a lifting cylinder 24 fixed to the bottom of the support disc 21, a mobile plate 25 connected and fixed to the mobile rod of the lifting cylinder 24, and a press pin 26 supported by the mobile plate 25. Exhaust ports 22a and 23a are made, respectively, at the suction heads 22 and 23, and the suction heads are equipped with a plurality of openings at the the suction faces 22b and 23b. The press pin 26 is passed freely to ascent and descent in the passage hole made in the mobile plate 25, and it is energized downward by a coil spring 27, and the surface of the pin head 26a at the tip is made in hemispherical form.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【発明の属する技術分野】本発明は基板の重ね合わせ方
法及び装置に係り、特に、半導体基板とガラス基板との
接合や半導体基板同士の接合を行うに際して、事前に基
板を相互に接触させ、重ね合わせるための方法及び装置
として好適な技術に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method and an apparatus for stacking substrates, and more particularly, when bonding a semiconductor substrate and a glass substrate or bonding semiconductor substrates to each other, the substrates are brought into contact with each other in advance and stacked. The present invention relates to a technique suitable as a method and device for matching.

【0002】[0002]

【従来の技術】従来、半導体基板同士や半導体基板とガ
ラス基板とを接合するための種々の技術が知られてい
る。この中で、例えばマイクロマシニング分野において
は、シリコンウエハ(以下、半導体基板という。)とホ
ウケイ酸ガラス基板(以下、ガラス基板という。)とを
接触させ、この状態で陽極接合により半導体基板とガラ
ス基板とを接合する技術があり、この技術により圧力セ
ンサ、インクジェットヘッド等の種々のマイクロ部品を
製造する試みがなされている。
2. Description of the Related Art Conventionally, various techniques for bonding semiconductor substrates to each other or bonding a semiconductor substrate and a glass substrate are known. Among them, for example, in the field of micromachining, a silicon wafer (hereinafter referred to as a semiconductor substrate) and a borosilicate glass substrate (hereinafter referred to as a glass substrate) are brought into contact with each other, and in this state, the semiconductor substrate and the glass substrate are anodically bonded. There is a technique for joining and, and by this technique, attempts have been made to manufacture various micro parts such as a pressure sensor and an inkjet head.

【0003】陽極接合技術とは、例えば半導体基板とガ
ラス基板の接合面を相互に接触させた状態で300〜4
00℃に加熱し、半導体基板に正電位を、ガラス基板に
負電位を与えて直流電圧を印加することにより、両者を
永久的に接合させることができるものである。
The anodic bonding technique is, for example, 300 to 4 when the bonding surfaces of a semiconductor substrate and a glass substrate are in contact with each other.
By heating to 00 ° C. and applying a positive potential to the semiconductor substrate and a negative potential to the glass substrate to apply a DC voltage, the two can be permanently bonded.

【0004】図10はこのような陽極接合技術を用いた
インクジェットヘッドの製造工程を示すものである。ガ
ラス基板11の表面には表面凹部11aが縦横に配列さ
れた状態に多数形成されている。このガラス基板11の
上には、シリコンウエハから成る半導体基板12が重ね
られている。
FIG. 10 shows a manufacturing process of an ink jet head using such an anodic bonding technique. A large number of surface recesses 11a are formed on the surface of the glass substrate 11 in a state of being arranged vertically and horizontally. A semiconductor substrate 12 made of a silicon wafer is stacked on the glass substrate 11.

【0005】この半導体基板12にはエッチング溝12
aが形成され、このエッチング溝12aによって薄肉部
12bが形成され、圧力センサ等にも用いられるいわゆ
るダイヤフラム型の半導体基板となっている。半導体基
板12の上にはさらにガラス基板13が重ねられる。
Etching grooves 12 are formed in the semiconductor substrate 12.
a is formed, and the thin portion 12b is formed by the etching groove 12a, which is a so-called diaphragm type semiconductor substrate used also for a pressure sensor or the like. A glass substrate 13 is further stacked on the semiconductor substrate 12.

【0006】半導体基板12及びガラス基板11,13
の接合面は極めて平坦性が高く、清浄な表面に形成され
ているので、相互に接触させるだけでぴったりと密着す
る。このようにして、ガラス基板11、半導体基板12
及びガラス基板13が積層された状態で、図示しない保
持治具によって相互に固定する。この保持治具には、ガ
ラス基板11、半導体基板12及びガラス基板13にそ
れぞれ所定の電圧を印加できるように印加電極が設けら
れている。
The semiconductor substrate 12 and the glass substrates 11 and 13
Since the joint surface of is extremely flat and is formed on a clean surface, it can be closely adhered only by bringing them into contact with each other. In this way, the glass substrate 11 and the semiconductor substrate 12
In a state where the glass substrate 13 and the glass substrate 13 are stacked, they are fixed to each other by a holding jig (not shown). The holding jig is provided with an application electrode so that a predetermined voltage can be applied to each of the glass substrate 11, the semiconductor substrate 12, and the glass substrate 13.

【0007】上記印加電極を電源14に接続することに
より、まずガラス基板11と半導体基板12との間に数
百Vの直流電圧を印加し、陽極接合を行い、次に、半導
体基板12とガラス基板13との間に電源15を接続し
て、同様に陽極接合を行う。このようにして半導体基板
12の両側にガラス基板11,13が接合されることに
よって、薄肉部12bを振動部とするインクジェットヘ
ッドが多数形成された接合体が完成する。この接合体は
後に、ダイシング等によって個々のインクジェットヘッ
ドに分離される。
By connecting the above-mentioned applying electrode to the power source 14, first, a direct current voltage of several hundred V is applied between the glass substrate 11 and the semiconductor substrate 12 to perform anodic bonding, and then the semiconductor substrate 12 and the glass substrate. The power supply 15 is connected to the substrate 13 and anodic bonding is similarly performed. By bonding the glass substrates 11 and 13 to both sides of the semiconductor substrate 12 in this manner, a bonded body having a large number of inkjet heads having the thin portion 12b as a vibrating portion is completed. This bonded body is later separated into individual inkjet heads by dicing or the like.

【0008】[0008]

【発明が解決しようとする課題】しかしながら、上記陽
極接合に際して、事前に基板を相互に位置決めし、接触
させて重ね合わせた状態とする必要があるが、従来は手
作業により半導体基板をガラス基板上に載置し、この状
態を治具によって保持固定していた。ところが、半導体
基板やガラス基板の表面を平坦性及び清浄性の高い表面
に形成しているため、一旦接触するとぴったりと密着し
相互にスライドさせることは極めて困難になる。そのた
め、基板を接触させた段階で、2枚の基板の接触状態が
決定され、例えば一方の基板が撓んだまま接触させてし
まうと、基板の撓み状態が解消されずにそのままの状態
で接合されることとなり、基板間に空間が発生したり、
接合不良の領域が残存したりするという問題点がある。
However, in the above-mentioned anodic bonding, it is necessary to position the substrates with respect to each other in advance, and to bring them into contact with each other so that they are overlaid, but conventionally, the semiconductor substrate is manually placed on the glass substrate. It was placed on the substrate, and this state was held and fixed by a jig. However, since the surface of the semiconductor substrate or the glass substrate is formed to have high flatness and cleanliness, it is extremely difficult to make a close contact with each other once they come into contact with each other and slide them on each other. Therefore, when the two substrates are brought into contact with each other, the contact state of the two substrates is determined. For example, if one of the substrates is brought into contact with the substrate being bent, the bending state of the substrate is not canceled and the bonding is performed as it is. Will cause a space between the boards,
There is a problem that a defective joint region remains.

【0009】ここで、半導体基板の表面には微細な凹凸
形状が各種パターニング、エッチング、堆積技術等によ
って形成されており、特に圧力センサやインクジェット
ヘッド等を形成する場合には、半導体基板に極めて薄い
薄肉部が形成されることがあるため、ガラス基板上に半
導体基板を載置するときに、半導体基板が微妙に撓んだ
り歪んだりするため、接合後において2枚の基板間に内
部応力が残存し、マイクロ部品等の形成素子の特性が悪
化してしまうという問題点がある。
Here, fine irregularities are formed on the surface of the semiconductor substrate by various patterning, etching, deposition techniques and the like, and particularly when a pressure sensor, an ink jet head or the like is formed, the semiconductor substrate is extremely thin. Since a thin portion may be formed, when the semiconductor substrate is placed on the glass substrate, the semiconductor substrate may be slightly bent or distorted, so that internal stress remains between the two substrates after joining. However, there is a problem in that the characteristics of forming elements such as micro components are deteriorated.

【0010】そこで、本発明は上記問題点を解決するも
のであり、その課題は、上記のような基板間の接合を行
う前に2枚の基板を撓みや歪みがなく、内部応力が残存
しない状態で重ね合わせる方法及び装置を実現すること
にある。
Therefore, the present invention solves the above-mentioned problems. The problem is that the two substrates are not bent or distorted before the bonding between the substrates as described above, and no internal stress remains. It is to realize a method and apparatus for superposing in a state.

【0011】[0011]

【課題を解決するための手段】上記課題を解決するため
に本発明が講じた手段は、第1基板の少なくとも複数箇
所を吸着保持するとともに、前記第1基板を、対向配置
された第2基板に対して凸形状になるように前記第1基
板の裏面側から支持し、前記第1基板における前記第2
基板に対して最も突出した突出領域から前記第2基板に
接触させ、前記第1基板と前記第2基板との接触領域に
おいて前記凸形状を解消しながら、前記突出領域からそ
の隣接領域へと次第に前記第1基板を前記第2基板に対
して接触させて行くことにより前記第1基板と前記第2
基板とを重ね合わせることを特徴とする基板の重ね合わ
せ方法である。
[Means for Solving the Problems] In order to solve the above-mentioned problems, the means taken by the present invention is to adsorb and hold at least a plurality of portions of a first substrate, and to dispose the first substrate opposite to a second substrate. Is supported from the back side of the first substrate so as to have a convex shape with respect to the second substrate of the first substrate.
The protrusion region that is most protruded from the substrate is brought into contact with the second substrate, and the convex shape is eliminated in the contact region between the first substrate and the second substrate, while gradually increasing from the protrusion region to its adjacent region. The first substrate and the second substrate are brought into contact with each other by bringing the first substrate into contact with the second substrate.
A method of stacking substrates is characterized in that the substrates are stacked.

【0012】この手段によれば、第1基板を凸形状に保
持してまずその突出領域から第2基板に接触させ、その
隣接領域へと徐々に接触させていくことによって、第1
基板が不用意に撓んだり、歪んだりすることなく、スム
ーズに接触させていくことができるので、撓みや歪みを
残すことなく重ね合わせることができ、接合後において
も内部応力の残存することのない接合体を形成すること
ができる。
According to this means, the first substrate is held in a convex shape, firstly brought into contact with the second substrate from the projecting region, and then gradually brought into contact with the adjacent region, whereby the first substrate is formed.
Since the boards can be brought into contact smoothly without being flexed or distorted carelessly, they can be overlapped without leaving any bending or distortion, and internal stress remains even after joining. No bonded body can be formed.

【0013】ここで、前記第1基板は半導体ウエハであ
り、前記第2基板はガラス基板である場合が有る。
Here, the first substrate may be a semiconductor wafer, and the second substrate may be a glass substrate.

【0014】この場合にはまた、前記第1基板は、局所
的に薄肉部を備えたダイヤフラム型半導体基板である場
合がある。この場合には薄肉部の存在によって半導体基
板に撓みや歪みが発生し易く、またその薄肉部の撓みや
歪みによって製造される素子特性が悪影響を被り易いの
で、特に効果的である。
In this case, the first substrate may be a diaphragm type semiconductor substrate having a thin portion locally. In this case, the presence of the thin portion is likely to cause bending or distortion in the semiconductor substrate, and the bending or distortion of the thin portion is likely to adversely affect the manufactured device characteristics, which is particularly effective.

【0015】次に、基板の重ね合わせ装置としては、第
1基板の少なくとも複数箇所の周縁領域を吸着保持する
複数の吸着保持部と、前記第1基板を、前記第1基板の
裏面側から支持可能とする支持保持部と、保持された前
記第1基板を対向配置された第2基板に対して接離可能
とする駆動手段とを設けるものである。この場合には特
に、半導体基板には種々の微細構造が形成されている場
合が多いが、周縁領域を吸着保持することによって微細
構造を回避して保持することができるので、半導体基板
へ与える機械的影響を低減することができる。
Next, as a substrate stacking apparatus, a plurality of suction holding portions that suction-hold at least a plurality of peripheral regions of the first substrate and the first substrate are supported from the back surface side of the first substrate. A supporting / holding unit that enables the holding and a driving unit that allows the held first substrate to come into contact with and separate from the second substrate that is arranged to face each other are provided. In this case, in particular, various fine structures are often formed on the semiconductor substrate, but since the fine structure can be avoided and held by sucking and holding the peripheral region, a machine applied to the semiconductor substrate It is possible to reduce the physical influence.

【0016】また、第1基板の表面を吸着保持するとと
もに、相互にその吸着保持面をその法線方向に移動可能
に構成された複数の吸着保持部と、該吸着保持部を第1
基板に対向配置された第2基板に対して接離可能とする
駆動手段とを設ける場合も有る。
Further, a plurality of suction holding portions configured to hold the surface of the first substrate by suction and move the suction holding surfaces thereof in the normal direction to each other, and the first suction holding portion.
There may be a case where a driving unit that can be brought into contact with and separated from the second substrate arranged so as to face the substrate is provided.

【0017】これらの場合において、前記第1基板を前
記第2基板に対して凸形状になるように保持し、前記第
1基板における前記第2基板に対して最も突出した突出
領域から前記第2基板に接触させ、前記第1基板と前記
第2基板との接触領域において前記凸形状を解消しなが
ら、前記突出領域からその隣接領域へと次第に前記第1
基板を前記第2基板に対して接触させて行くことによっ
て前記第1基板と前記第2基板とを重ね合わせるように
構成することが好ましい。
In these cases, the first substrate is held so as to have a convex shape with respect to the second substrate, and the second substrate is projected from a projecting region of the first substrate that is most projecting with respect to the second substrate. The first substrate is brought into contact with the substrate, and the convex shape is eliminated in the contact region between the first substrate and the second substrate, while the first region is gradually moved from the protruding region to the adjacent region.
It is preferable that the first substrate and the second substrate are superposed by bringing the substrate into contact with the second substrate.

【0018】また、前記支持保持部又は前記吸着保持部
を前記駆動手段に対して前記第1基板に向けて付勢され
た状態で直接若しくは間接的に取付けることが望まし
い。
Further, it is desirable that the support holding portion or the suction holding portion is directly or indirectly attached to the driving means in a state of being biased toward the first substrate.

【0019】この手段によれば、支持保持部又は吸着保
持部が第1基板に向けて付勢された状態で駆動手段に対
して取付けられているため、第1基板を第2基板に接触
させる際にこれらの基板に必要以上の応力を加えてしま
う恐れがなく、また、第1基板が第2基板に接触した後
には支持保持部又は吸着保持部はその付勢力に抗して移
動させられるため、第1基板は自然にその凸形状が解消
されていくことになるので、細かな位置制御等を行うこ
となく、第1基板を第2基板に接触させ、重ね合わせて
いくことができる。
According to this means, since the support holding portion or the suction holding portion is attached to the drive means while being biased toward the first substrate, the first substrate is brought into contact with the second substrate. At this time, there is no fear that stress will be applied to these substrates more than necessary, and after the first substrate comes into contact with the second substrate, the support holding part or the suction holding part is moved against the urging force thereof. Therefore, since the convex shape of the first substrate is naturally eliminated, it is possible to bring the first substrate into contact with the second substrate and superimpose them without performing fine position control.

【0020】[0020]

【発明の実施の形態】次に、添付図面を参照して本発明
に係る基板の重ね合わせ方法及び装置の実施形態につい
て説明する。以下に示す各実施形態は、インクジェット
ヘッドの製造に際して用いるように構成された半導体基
板とガラス基板との重ね合わせ方法或いは装置であっ
て、その方法又は装置により基板を重ね合わせた後に、
陽極接合によって接合させることを前提として行うもの
である。
BEST MODE FOR CARRYING OUT THE INVENTION Next, embodiments of a substrate superposing method and apparatus according to the present invention will be described with reference to the accompanying drawings. Each embodiment shown below is a method or apparatus for superposing a semiconductor substrate and a glass substrate configured for use in manufacturing an inkjet head, and after superposing the substrates by the method or apparatus,
This is performed on the premise that they are bonded by anodic bonding.

【0021】しかし、本発明においては、半導体基板と
ガラス基板との重ね合わせに限らず、半導体基板同士、
ガラス基板同士、或いは他の材質の基板の重ね合わせに
対して適用することも可能であり、重ね合わせた後の接
合方法としては陽極接合以外でも他の各種接合方法を施
すことが可能である。
However, in the present invention, not only the superposition of the semiconductor substrate and the glass substrate, but also the semiconductor substrates,
The present invention can be applied to the superposition of glass substrates or substrates made of other materials, and as the joining method after the superposition, various other joining methods than the anodic joining can be applied.

【0022】(第1実施形態)図1は第1実施形態にお
ける重ね合わせ装置の構造を示す概略縦断面図(a)及
び上部機構の概略底面図(b)である。本実施形態は底
盤16と、この底盤16の上方に昇降可能に配置される
上部機構20とから構成される。上部機構20は、図示
しない駆動手段、例えばリニアスライダ、流体圧シリン
ダ、ボールねじ等の各種機構により昇降可能に接続され
た支持盤21と、この支持盤21の底面に固定された左
右一対の吸着ヘッド22,23と、この吸着ヘッド2
2,23の間の位置において支持盤21の底面に固定さ
れ、エア圧や油圧等により動作する昇降シリンダ24
と、昇降シリンダ24の可動ロッドに接続固定された可
動板25と、可動板25に支持された押圧ピン26とか
ら構成されている。
(First Embodiment) FIG. 1 is a schematic vertical sectional view (a) showing a structure of a superposing apparatus in a first embodiment and a schematic bottom view (b) of an upper mechanism. The present embodiment is composed of a bottom plate 16 and an upper mechanism 20 arranged above the bottom plate 16 so as to be able to move up and down. The upper mechanism 20 includes a support plate 21 connected to be movable up and down by a driving mechanism (not shown) such as a linear slider, a fluid pressure cylinder, a ball screw, and a pair of left and right suction plates fixed to the bottom surface of the support plate 21. Heads 22 and 23 and this suction head 2
A lift cylinder 24 fixed to the bottom surface of the support board 21 at a position between 2 and 23 and operated by air pressure or hydraulic pressure.
And a movable plate 25 connected and fixed to a movable rod of the lifting cylinder 24, and a pressing pin 26 supported by the movable plate 25.

【0023】吸着ヘッド22,23にはそれぞれ排気孔
22a,23aが形成され、この排気孔22a,23a
は図示しない排気チューブを介して排気装置へと接続さ
れている。排気孔22a,23aは吸着ヘッド22,2
3の吸着面22b,23bにおいて複数の開口を備えて
いる。
Exhaust holes 22a and 23a are formed in the suction heads 22 and 23, respectively.
Is connected to an exhaust device via an exhaust tube (not shown). The exhaust holes 22a and 23a are attached to the suction heads 22 and 2, respectively.
The three suction surfaces 22b and 23b have a plurality of openings.

【0024】押圧ピン26は、可動板25に形成された
挿通孔に対して昇降自在に挿通されているとともに、コ
イルバネ27によって下方に付勢されている。押圧ピン
26の先端のピンヘッド26aの表面は半球状に形成さ
れている。
The pressing pin 26 is vertically inserted through an insertion hole formed in the movable plate 25 and is urged downward by a coil spring 27. The surface of the pin head 26a at the tip of the pressing pin 26 is formed in a hemispherical shape.

【0025】上記機構20は、まず、図示しない基板供
給部からガラス基板11を吸着ヘッド22,23によっ
て図示一点鎖線のように吸着保持し、底盤16とガラス
基板11に形成された位置合わせマーク等を基準として
画像処理等の公知の方法により位置合わせを行い、底盤
16の上に載置する。次に、図2に示すように、半導体
基板12を同様に吸着ヘッド22,23によって吸着保
持する。このとき、昇降シリンダ24を動作させて可動
板25を下降させ、押圧ピン26のピンヘッド26aが
半導体基板12の裏面(上面)の略中央部に接触するよ
うにする。
In the mechanism 20, first, the glass substrate 11 is sucked and held by the suction heads 22 and 23 from the substrate supply unit (not shown) as shown by the chain line in the figure, and the alignment marks formed on the bottom plate 16 and the glass substrate 11 are shown. Positioning is carried out by a known method such as image processing with reference to, and it is placed on the bottom plate 16. Next, as shown in FIG. 2, the semiconductor substrate 12 is similarly suction-held by the suction heads 22 and 23. At this time, the elevating cylinder 24 is operated to lower the movable plate 25 so that the pin head 26a of the pressing pin 26 contacts the substantially central portion of the back surface (upper surface) of the semiconductor substrate 12.

【0026】このとき、押圧ピン26はコイルバネ27
によって下方に付勢されているので、半導体基板12は
ピンヘッド26aにより押圧ピン26の自重とコイルバ
ネ27の弾性力とによって押圧され、図示のように下方
に向けて凸形状となるように僅かに湾曲する。押圧ピン
26の押圧力は、上記押圧ピン26の自重とコイルバネ
27の弾性力とを適宜調整することによって、予め半導
体基板12に対して充分な湾曲を加えることができ、し
かも、その湾曲の程度を、半導体基板12を損傷したり
半導体基板12に歪みを与えたりしない程度に抑制でき
る。
At this time, the pressing pin 26 is the coil spring 27.
Since the semiconductor substrate 12 is biased downward by the pin head 26a, the semiconductor substrate 12 is pressed by the weight of the pressing pin 26 and the elastic force of the coil spring 27, and is slightly curved so as to be convex downward as illustrated. To do. The pressing force of the pressing pin 26 can be sufficiently curved in advance on the semiconductor substrate 12 by appropriately adjusting the weight of the pressing pin 26 and the elastic force of the coil spring 27, and the degree of the bending. Can be suppressed to such an extent that the semiconductor substrate 12 is not damaged or the semiconductor substrate 12 is not strained.

【0027】次に、図3に示すように、上部機構20全
体を図示しない駆動手段により下降させ、上記と同様に
位置合わせを行った後、半導体基板12の接合面の略中
央部に形成された突出領域(押圧ピン26の押圧による
湾曲によって形成された凸形状の最も突出している部
分)を底盤16上に載置されているガラス基板12の表
面に接触させる。このとき、押圧ピン26は半導体基板
12がガラス基板11に接触することによってコイルバ
ネ27の弾性力に抗して上方へ押し返され、これをピン
ヘッド26aや可動板25に係合する基部26bに取付
けられた感圧センサ等により検知することによって図3
の状態で駆動手段を一時停止することもできる。
Next, as shown in FIG. 3, the entire upper mechanism 20 is lowered by a driving means (not shown), and after alignment is performed in the same manner as described above, the upper mechanism 20 is formed at a substantially central portion of the bonding surface of the semiconductor substrate 12. The protruding region (the most protruding part of the convex shape formed by the bending due to the pressing of the pressing pin 26) is brought into contact with the surface of the glass substrate 12 placed on the bottom plate 16. At this time, the pressing pin 26 is pushed back upward against the elastic force of the coil spring 27 due to the contact of the semiconductor substrate 12 with the glass substrate 11, and this is attached to the pin head 26a and the base portion 26b engaging with the movable plate 25. 3 is detected by a pressure sensor etc.
In this state, the driving means can be temporarily stopped.

【0028】次に、駆動手段により上部機構20をさら
に下降させていくと、半導体基板12は最初に接触して
いた中心部から周囲へと順にガラス基板11の表面に接
触していく。このとき、半導体基板12におけるガラス
基板11に対する接触領域(既に接触している部分)で
は、ピンヘッド26aが上部機構20の下降に従って上
方へ押し返され、これにより、接触領域では上記凸形状
が解消されていき、自然にガラス基板11にぴったりと
接触する。
Next, when the upper mechanism 20 is further lowered by the driving means, the semiconductor substrate 12 comes into contact with the surface of the glass substrate 11 in order from the center portion which was in contact first with the periphery. At this time, in the contact region of the semiconductor substrate 12 with respect to the glass substrate 11 (the part that is already in contact), the pin head 26a is pushed back upward as the upper mechanism 20 descends, whereby the convex shape is eliminated in the contact region. As it goes, it naturally comes into close contact with the glass substrate 11.

【0029】このようにして最終的には図4に示すよう
に半導体基板12がガラス基板11の表面に全て接触し
た状態に充分に近くなったところで、吸着ヘッド22,
23の吸着を解除し、半導体基板12を解放すると、あ
とは自然に半導体基板12がガラス基板11の上に載置
された状態となる。
Thus, finally, as shown in FIG. 4, when the semiconductor substrate 12 is sufficiently close to the state where the semiconductor substrate 12 is entirely in contact with the surface of the glass substrate 11, the suction head 22,
When the suction of 23 is released and the semiconductor substrate 12 is released, the semiconductor substrate 12 is naturally placed on the glass substrate 11.

【0030】本実施形態によれば、半導体基板12の略
中心部を突出させた凸曲面形状として、まずその中心部
をガラス基板11上に接触させ、その後、その周囲を順
にガラス基板11の表面に接触させていくので、半導体
基板12とガラス基板11との重ね合わせにおいて基板
の撓みや変形を残すことが殆どなく、接合後においても
内部応力(歪み)の残存を大幅に低減することができ
る。
According to the present embodiment, the semiconductor substrate 12 has a convex curved surface shape with a substantially central portion protruding, and the central portion is first brought into contact with the glass substrate 11, and thereafter, the periphery thereof is sequentially covered with the surface of the glass substrate 11. Since the semiconductor substrate 12 and the glass substrate 11 are superposed on each other, the bending and deformation of the substrate are hardly left, and the residual internal stress (strain) can be significantly reduced even after the bonding. .

【0031】また、押圧ピン26の弾性力により半導体
基板12を凸曲面形状に変形させるように構成したの
で、半導体基板12に必要以上の押圧力を加えることが
ないため、押圧力のかけ過ぎを防止できるとともに、弾
性力により駆動手段の位置ずれを吸収することができる
ので、細かな位置制御をすることなく、半導体基板12
をガラス基板11上に接触させることができる。
Further, since the semiconductor substrate 12 is deformed into a convex curved surface shape by the elastic force of the pressing pin 26, the semiconductor substrate 12 is not applied with an unnecessarily large pressing force. In addition to being able to prevent it, the displacement of the drive means can be absorbed by the elastic force, so that the semiconductor substrate 12 is not required to perform fine position control.
Can be brought into contact with the glass substrate 11.

【0032】(第2実施形態)次に、本発明に係る第2
実施形態について説明する。この実施形態においては、
図5に示すように、底盤16の上方に上部機構30が配
置され、この上部機構30は、図示しない駆動手段によ
り昇降可能に構成された支持盤31と、支持盤31に穿
設された挿通孔に昇降自在に挿通されるとともに、外表
面にネジ溝が刻設され、しかも中心に排気孔32aが形
成されたネジ軸32と、ネジ軸32の上端部に螺合した
位置決めナット33と、ネジ軸32の下端部に螺合され
たバネ止めナット34と、支持盤31とバネ止めナット
34との間に弾装されたコイルバネ35とから構成され
る。
(Second Embodiment) Next, a second embodiment according to the present invention
An embodiment will be described. In this embodiment,
As shown in FIG. 5, an upper mechanism 30 is arranged above the bottom plate 16, and the upper mechanism 30 is provided with a support plate 31 configured to be able to move up and down by a driving unit (not shown) and an insertion hole formed in the support plate 31. A screw shaft 32 which is vertically inserted into the hole, has a screw groove formed on the outer surface thereof, and has an exhaust hole 32a formed in the center thereof; and a positioning nut 33 screwed to the upper end of the screw shaft 32. The screw shaft 32 includes a spring lock nut 34 screwed into the lower end portion thereof, and a coil spring 35 elastically mounted between the support plate 31 and the spring lock nut 34.

【0033】ネジ軸32、位置決めナット33、バネ止
めナット34及びコイルバネ35からなる組立体は、図
5(b)に示すように、支持盤31の中心部と周囲4箇
所の計5箇所にそれぞれ取付けられている。ネジ軸32
の排気孔32aは図示しない排気チューブを介して排気
装置に接続されるとともに、ネジ軸32の先端に形成さ
れた吸着面32bに開口を備えている。
As shown in FIG. 5B, the assembly consisting of the screw shaft 32, the positioning nut 33, the spring lock nut 34, and the coil spring 35 has a central portion of the support board 31 and four peripheral portions, respectively, for a total of five locations. Installed. Screw shaft 32
The exhaust hole 32a is connected to an exhaust device via an exhaust tube (not shown), and has an opening on a suction surface 32b formed at the tip of the screw shaft 32.

【0034】本実施形態では、まず第1実施形態と同様
にガラス基板11を底盤16上に位置決め載置し、その
上に半導体基板12を接触させる。このとき、接触させ
る前の半導体基板12は、図6に示すように、端部12
Aをやや下方に、端部12Aとは反対側の端部12Bを
やや上方に位置させた状態となるように、半導体基板1
2の接合面が水平面よりも多少傾斜するように吸着保持
する。
In the present embodiment, first, similarly to the first embodiment, the glass substrate 11 is positioned and placed on the bottom plate 16, and the semiconductor substrate 12 is brought into contact therewith. At this time, as shown in FIG.
The semiconductor substrate 1 is arranged so that A is located slightly downward and the end 12B opposite to the end 12A is located slightly upward.
It is adsorbed and held so that the joint surface of 2 is slightly inclined from the horizontal plane.

【0035】このようにするには、端部12Aの側のネ
ジ軸32を位置決めナット33の回転により下方に移動
させ、端部12Bの側のネジ軸32を位置決めナット3
3の回転により上方に移動させればよい。ここで、コイ
ルバネ35の弾性力を均等にするには、ネジ軸32の移
動量を打ち消すようにバネ止めナット34を回転させ
て、支持盤31とバネ止めナット34との間隔を一定に
保持すればよい。
To do this, the screw shaft 32 on the end 12A side is moved downward by the rotation of the positioning nut 33, and the screw shaft 32 on the end 12B side is moved to the positioning nut 3.
It may be moved upward by the rotation of 3. Here, in order to make the elastic force of the coil spring 35 uniform, it is necessary to rotate the spring lock nut 34 so as to cancel the movement amount of the screw shaft 32 and keep the gap between the support plate 31 and the spring lock nut 34 constant. Good.

【0036】ここで、半導体基板12は、重ね合わされ
るガラス基板11に対して凸形状になるように、すなわ
ち本実施形態では下に凸になるように、僅かでも湾曲さ
せることが必要になる。これは、仮に半導体基板12が
上に凸になるように僅かでも凹形状に湾曲すると、重ね
合わされるガラス基板11と半導体基板12との間に非
接触状態になる領域が発生し易く、接合不良の原因とな
るからである。
Here, the semiconductor substrate 12 needs to be slightly curved so as to have a convex shape with respect to the glass substrates 11 to be stacked, that is, to have a convex shape downward in this embodiment. This is because, if the semiconductor substrate 12 is curved in a slightly concave shape so as to be convex upward, a non-contact area is likely to occur between the glass substrate 11 and the semiconductor substrate 12 that are overlapped with each other, resulting in poor bonding. This will cause

【0037】次に、図示しない駆動手段により上部機構
30を下降させ、まず、半導体基板12の端部12A近
傍の突出領域をガラス基板11の表面に接触させる。こ
のとき、接触した端部12Aの側のネジ軸32に半導体
基板12を介してガラス基板11から応力が加わって
も、ネジ軸32がコイルバネ35の弾性により上方へ移
動するので、ネジ軸32、位置決めナット33、ネジ止
めナット34の自重及びコイルバネ35の弾性力以上の
応力が半導体基板12に加わることはない。
Next, the upper mechanism 30 is lowered by a driving means (not shown) so that the protruding region near the end 12A of the semiconductor substrate 12 is brought into contact with the surface of the glass substrate 11. At this time, even if stress is applied to the screw shaft 32 on the side of the contacted end 12A from the glass substrate 11 via the semiconductor substrate 12, the screw shaft 32 moves upward due to the elasticity of the coil spring 35. No stress is applied to the semiconductor substrate 12 beyond the weight of the positioning nut 33 and the screwing nut 34 and the elastic force of the coil spring 35.

【0038】このとき、上記第1実施形態と同様に、各
ネジ軸32の吸着している半導体基板12の部分がガラ
ス基板11に接触した旨をセンサ等により検出して、駆
動手段を制御することも可能である。
At this time, similarly to the first embodiment, a sensor or the like detects that the portion of the semiconductor substrate 12 on which the screw shafts 32 are attracted is in contact with the glass substrate 11 to control the driving means. It is also possible.

【0039】次に、さらに駆動手段によって上部機構3
0を下降させていくと、半導体基板12は端部12Aか
ら徐々に中央部に向かってガラス基板11に接触し、図
8に示すように中央部が接触し、さらに上部機構30を
下降させていくと、図9に示すように端部12Bの近傍
まで半導体基板12がガラス基板11に接触する。この
状態で、ネジ軸32の吸着を解除し、上部機構30から
半導体基板12を解放し、残りの部分を自然に接触させ
ると、ガラス基板と半導体基板との重ね合わせが完了す
る。
Next, the upper mechanism 3 is further driven by the driving means.
When 0 is lowered, the semiconductor substrate 12 gradually contacts the glass substrate 11 from the end portion 12A toward the central portion, and the central portion contacts as shown in FIG. 8, and the upper mechanism 30 is further lowered. Then, as shown in FIG. 9, the semiconductor substrate 12 contacts the glass substrate 11 up to the vicinity of the end 12B. In this state, the suction of the screw shaft 32 is released, the semiconductor substrate 12 is released from the upper mechanism 30, and the remaining portions are naturally brought into contact with each other, whereby the superposition of the glass substrate and the semiconductor substrate is completed.

【0040】このように、半導体基板12をやや凸曲面
状にした状態で、その一端から他端に向けて徐々にガラ
ス基板11の表面に接触させていくことができるので、
上記第1実施形態と同様に半導体基板12の撓み、歪
み、変形を生ずることなく、2枚の基板を重ね合わせる
ことができ、しかも接合後の内部応力の残存量を大幅に
低減できる。
In this way, the semiconductor substrate 12 can be gradually brought into contact with the surface of the glass substrate 11 from one end to the other end of the semiconductor substrate 12 in a slightly convex curved shape.
Similar to the first embodiment, the two substrates can be superposed on each other without causing the semiconductor substrate 12 to bend, distort, or deform, and the residual amount of the internal stress after bonding can be significantly reduced.

【0041】上記各実施形態では、半導体基板12を略
中心部又は端部からそれぞれ接触させていくようにして
いるが、それ以外のいずれの場所から接触させていって
も構わない。この場合、一方の基板表面を最初の接触点
から常に凸曲面状にした状態で徐々に他方の基板表面に
接触させていくことにより、2枚の基板間に離反した領
域や接合不良の領域を発生させることなく、しかも撓み
や歪みを残すことなく重ね合わせることができる。
In each of the above-described embodiments, the semiconductor substrate 12 is contacted from the substantially central portion or the end portion, but it may be contacted from any other location. In this case, one substrate surface is made to have a convex curved surface shape from the first contact point, and is gradually brought into contact with the other substrate surface, whereby a separated region or a defective joint region is formed between the two substrates. It can be superposed without causing any bending and distortion.

【0042】上記各実施形態では、ガラス基板11に半
導体基板12を重ね合わせる場合を例にとって説明した
が、その後、半導体基板12の上には、短冊状の複数の
ガラス基板13を同様にして重ね合わせ、最終的にガラ
ス基板11、半導体基板12及びガラス基板13を積層
した状態で保持固定し、図10に示すようにして陽極接
合を施すことによって、インクジェットヘッドを製造す
るための接合体を形成することができる。
In each of the above-described embodiments, the case where the semiconductor substrate 12 is superposed on the glass substrate 11 has been described as an example, but thereafter, a plurality of strip-shaped glass substrates 13 are superposed on the semiconductor substrate 12 in the same manner. Finally, the glass substrate 11, the semiconductor substrate 12, and the glass substrate 13 are finally held and fixed in a laminated state, and anodic bonding is performed as shown in FIG. 10 to form a bonded body for manufacturing an inkjet head. can do.

【0043】[0043]

【発明の効果】以上説明したように本発明によれば以下
の効果を奏する。
As described above, according to the present invention, the following effects can be obtained.

【0044】請求項1、請求項6によれば、第1基板を
凸形状に保持してまずその突出領域から第2基板に接触
させ、その隣接領域へと徐々に接触させていくことによ
って、第1基板が不用意に撓んだり歪んだりすることな
く、スムーズに接触させていくことができるので、撓み
や歪みを残すことなく重ね合わせることができ、接合後
においても内部応力の残存することのない接合体を形成
することができる。
According to the first and the sixth aspects, by holding the first substrate in a convex shape, first contacting the second substrate from the protruding region, and gradually contacting the adjacent region with the second substrate, Since the first substrate can be smoothly brought into contact with each other without being flexed or distorted carelessly, the first substrate can be superposed without leaving any bending or distortion, and the internal stress remains even after the bonding. It is possible to form a joint body without

【0045】請求項3によれば、薄肉部の存在によって
半導体基板に撓みや歪みが発生し易く、またその薄肉部
の撓みや歪みによって製造される素子特性が悪影響を被
り易いので、特に効果的である。
According to the third aspect of the invention, the presence of the thin portion easily causes the semiconductor substrate to bend or distort, and the bending or strain of the thin portion easily affects the manufactured device characteristics, which is particularly effective. Is.

【0046】請求項4又は請求項5によれば、前記第1
基板を前記第2基板に対して凸形状になるように保持
し、前記第1基板における前記第2基板に対して最も突
出した突出領域から前記第2基板に接触させ、前記第1
基板と前記第2基板との接触領域において前記凸形状を
解消しながら、前記突出領域からその隣接領域へと次第
に前記第1基板を前記第2基板に対して接触させて行く
ことによって前記第1基板と前記第2基板とを重ね合わ
せることができる。特に、請求項4の場合、半導体基板
には種々の微細構造が形成されている場合が多いが、周
縁領域を吸着保持することによって微細構造を回避して
保持することができるので、半導体基板へ与える機械的
影響を低減することができる。
According to claim 4 or claim 5, the first
The substrate is held so as to have a convex shape with respect to the second substrate, and the first substrate is brought into contact with the second substrate from a projecting region most projecting with respect to the second substrate.
The first substrate is gradually brought into contact with the second substrate from the protruding region to the adjacent region while eliminating the convex shape in the contact region between the substrate and the second substrate. A substrate and the second substrate can be superposed. Particularly, in the case of claim 4, although various fine structures are often formed on the semiconductor substrate, the fine structure can be avoided and held by adsorbing and holding the peripheral region. The mechanical influence exerted can be reduced.

【0047】請求項7又は請求項8によれば、支持保持
部又は吸着保持部が第1基板に向けて付勢された状態で
駆動手段に対して取付けられているため、第1基板を第
2基板に接触させる際にこれらの基板に必要以上の応力
を加えてしまう恐れがなく、また、第1基板が第2基板
に接触した後には支持保持部又は吸着保持部はその付勢
力に抗して移動させられるため、第1基板は自然にその
凸形状が解消されていくことになるので、細かな位置制
御等を行うことなく、第1基板を第2基板に接触させ、
重ね合わせていくことができる。
According to the seventh or eighth aspect, since the support holding portion or the suction holding portion is attached to the drive means in a state of being urged toward the first substrate, the first substrate is attached to the first substrate. There is no risk of applying unnecessary stress to these substrates when they are brought into contact with the two substrates, and after the first substrate comes into contact with the second substrate, the support holding portion or the suction holding portion resists the urging force. Since the convex shape of the first substrate is naturally eliminated because the first substrate is moved, the first substrate is brought into contact with the second substrate without performing fine position control and the like.
Can be stacked.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明に係る第1実施形態を示す概略縦断面図
(a)及び上部機構の概略底面図(b)である。
FIG. 1 is a schematic vertical sectional view (a) and a schematic bottom view (b) of an upper mechanism showing a first embodiment according to the present invention.

【図2】第1実施形態における重ね合わせ前の状態を示
す概略縦断面図である。
FIG. 2 is a schematic vertical sectional view showing a state before overlapping in the first embodiment.

【図3】第1実施形態における重ね合わせ途中の状態を
示す概略縦断面図である。
FIG. 3 is a schematic vertical sectional view showing a state in the middle of superposition in the first embodiment.

【図4】第1実施形態における重ね合わせ完了時の状態
を示す概略縦断面図である。
FIG. 4 is a schematic vertical sectional view showing a state at the time of completion of superposition in the first embodiment.

【図5】本発明に係る第2実施形態を示す概略縦断面図
(a)及び上部機構の概略底面図(b)である。
FIG. 5 is a schematic vertical sectional view (a) showing a second embodiment according to the present invention and a schematic bottom view (b) of an upper mechanism.

【図6】第2実施形態における重ね合わせ前の状態を示
す概略縦断面図である。
FIG. 6 is a schematic vertical sectional view showing a state before overlapping in the second embodiment.

【図7】第2実施形態における重ね合わせ途中の状態を
示す概略縦断面図である。
FIG. 7 is a schematic vertical sectional view showing a state in the middle of superposition in the second embodiment.

【図8】第2実施形態における重ね合わせ途中の状態を
示す概略縦断面図である。
FIG. 8 is a schematic vertical sectional view showing a state in the middle of superposition in the second embodiment.

【図9】第2実施形態における重ね合わせ完了時の状態
を示す概略縦断面図である。
FIG. 9 is a schematic vertical sectional view showing a state at the time of completion of superposition in the second embodiment.

【図10】インクジェットヘッドの製造工程の中の陽極
接合による基板接合の状態を示す概略説明図である。
FIG. 10 is a schematic explanatory diagram showing a state of substrate bonding by anodic bonding in the manufacturing process of the inkjet head.

【符号の説明】[Explanation of symbols]

11,13 ガラス基板 12 半導体基板 16 底盤 20 上部機構 21 支持盤 22,23 吸着ヘッド 24 昇降シリンダ 25 可動板 26 押圧ピン 26a ピンヘッド 11, 13 Glass substrate 12 Semiconductor substrate 16 Bottom plate 20 Upper mechanism 21 Support plate 22,23 Adsorption head 24 Elevating cylinder 25 Movable plate 26 Pressing pin 26a Pin head

Claims (8)

【特許請求の範囲】[Claims] 【請求項1】 第1基板の少なくとも複数箇所を吸着保
持するとともに、前記第1基板を、対向配置された第2
基板に対して凸形状になるように前記第1基板の裏面側
から支持し、前記第1基板における前記第2基板に対し
て最も突出した突出領域から前記第2基板に接触させ、
前記第1基板と前記第2基板との接触領域において前記
凸形状を解消しながら、前記突出領域からその隣接領域
へと次第に前記第1基板を前記第2基板に対して接触さ
せて行くことにより前記第1基板と前記第2基板とを重
ね合わせることを特徴とする基板の重ね合わせ方法。
1. At least a plurality of portions of a first substrate are adsorbed and held, and the first substrate is disposed to face a second substrate.
The substrate is supported from the back surface side of the first substrate so as to have a convex shape, and is brought into contact with the second substrate from a protruding region of the first substrate that most projects with respect to the second substrate,
By eliminating the convex shape in the contact region between the first substrate and the second substrate, gradually contacting the first substrate with the second substrate from the protruding region to the adjacent region. A method of stacking substrates, wherein the first substrate and the second substrate are stacked.
【請求項2】 請求項1において、前記第1基板は半導
体ウエハであり、前記第2基板はガラス基板であること
を特徴とする基板の重ね合わせ方法。
2. The method of stacking substrates according to claim 1, wherein the first substrate is a semiconductor wafer and the second substrate is a glass substrate.
【請求項3】 請求項2において、前記第1基板は、局
所的に薄肉部を備えたダイヤフラム型半導体基板である
ことを特徴とする基板の重ね合わせ方法。
3. The method for stacking substrates according to claim 2, wherein the first substrate is a diaphragm-type semiconductor substrate locally having a thin portion.
【請求項4】 第1基板の少なくとも複数箇所の周縁領
域を吸着保持する複数の吸着保持部と、前記第1基板
を、前記第1基板の裏面側から支持可能とする支持保持
部と、保持された前記第1基板を対向配置された第2基
板に対して接離可能とする駆動手段とを有することを特
徴とする基板の重ね合わせ装置。
4. A plurality of suction-holding units that suction-hold at least a plurality of peripheral regions of the first substrate, a support-holding unit that can support the first substrate from the back surface side of the first substrate, and a holding unit. And a driving means for enabling the separated first substrate to come into contact with and separate from the oppositely arranged second substrate.
【請求項5】 第1基板の表面を吸着保持するととも
に、相互にその吸着保持面をその法線方向に移動可能に
構成された複数の吸着保持部と、該吸着保持部を第1基
板に対向配置された第2基板に対して接離可能とする駆
動手段とを有することを特徴とする基板の重ね合わせ装
置。
5. A plurality of suction holding portions configured to hold the surface of the first substrate by suction and move the suction holding surfaces of the first substrate in the normal direction to each other, and the suction holding portions on the first substrate. A substrate stacking device, comprising: a driving unit that can be brought into contact with and separated from a second substrate that is disposed so as to face each other.
【請求項6】 請求項4又は請求項5において、前記第
1基板を前記第2基板に対して凸形状になるように保持
し、前記第1基板における前記第2基板に対して最も突
出した突出領域から前記第2基板に接触させ、前記第1
基板と前記第2基板との接触領域において前記凸形状を
解消しながら、前記突出領域からその隣接領域へと次第
に前記第1基板を前記第2基板に対して接触させて行く
ことによって前記第1基板と前記第2基板とを重ね合わ
せるように構成したことを特徴とする基板の重ね合わせ
装置。
6. The method according to claim 4 or 5, wherein the first substrate is held so as to have a convex shape with respect to the second substrate, and most protrudes from the second substrate in the first substrate. The first substrate is contacted with the second substrate from the protruding region,
The first substrate is gradually brought into contact with the second substrate from the protruding region to the adjacent region while eliminating the convex shape in the contact region between the substrate and the second substrate. A substrate superposing apparatus, characterized in that the substrate and the second substrate are superposed on each other.
【請求項7】 請求項4において、前記支持保持部は前
記駆動手段に対して前記第1基板に向けて付勢された状
態で直接若しくは間接的に取付けられていることを特徴
とする基板の重ね合わせ装置。
7. The substrate according to claim 4, wherein the support holding portion is directly or indirectly attached to the drive means in a state of being urged toward the first substrate. Overlay device.
【請求項8】 請求項5において、前記吸着保持部は前
記駆動手段に対して前記第1基板に向けて付勢された状
態で直接若しくは間接的に取付けられていることを特徴
とする基板の重ね合わせ装置。
8. The substrate according to claim 5, wherein the suction holding portion is directly or indirectly attached to the driving means in a state of being urged toward the first substrate. Overlay device.
JP8088453A 1996-04-10 1996-04-10 Method and device for laminating substrates Withdrawn JPH09283392A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8088453A JPH09283392A (en) 1996-04-10 1996-04-10 Method and device for laminating substrates

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8088453A JPH09283392A (en) 1996-04-10 1996-04-10 Method and device for laminating substrates

Publications (1)

Publication Number Publication Date
JPH09283392A true JPH09283392A (en) 1997-10-31

Family

ID=13943227

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8088453A Withdrawn JPH09283392A (en) 1996-04-10 1996-04-10 Method and device for laminating substrates

Country Status (1)

Country Link
JP (1) JPH09283392A (en)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007043254A1 (en) * 2005-10-12 2007-04-19 Murata Manufacturing Co., Ltd. Bonding apparatus
JP2009535823A (en) * 2006-04-28 2009-10-01 ヒューレット−パッカード デベロップメント カンパニー エル.ピー. Manufacturing tool for bonding
JP2012054416A (en) * 2010-09-01 2012-03-15 Nikon Corp Pressing device, lamination apparatus, lamination method, and method of manufacturing multilayer semiconductor device
JP2012059758A (en) * 2010-09-06 2012-03-22 Tokyo Ohka Kogyo Co Ltd Device and method for bonding
JP2012160628A (en) * 2011-02-02 2012-08-23 Sony Corp Substrate bonding method and substrate bonding device
JP2013120901A (en) * 2011-12-08 2013-06-17 Tokyo Electron Ltd Bonding method, program, computer storage medium, bonding device and bonding system
JP2013120902A (en) * 2011-12-08 2013-06-17 Tokyo Electron Ltd Bonding method, program, computer storage medium, bonding device and bonding system
JP2018041971A (en) * 2011-08-12 2018-03-15 エーファウ・グループ・エー・タルナー・ゲーエムベーハー Bonding device of substrate and method
WO2019146424A1 (en) * 2018-01-23 2019-08-01 東京エレクトロン株式会社 Substrate processing device and substrate processing method

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JPH0590393A (en) * 1991-09-30 1993-04-09 Sony Corp Adhering device for semiconductor wafer
JPH0766092A (en) * 1993-08-23 1995-03-10 Sumitomo Sitix Corp Method for adhering semiconductor wafer and adhering jig
JPH07142298A (en) * 1993-11-16 1995-06-02 Japan Aviation Electron Ind Ltd Anodic bonding equipment
JPH07254717A (en) * 1994-11-28 1995-10-03 Toshiba Corp Joining method of silicon crystal bodies

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0590393A (en) * 1991-09-30 1993-04-09 Sony Corp Adhering device for semiconductor wafer
JPH0766092A (en) * 1993-08-23 1995-03-10 Sumitomo Sitix Corp Method for adhering semiconductor wafer and adhering jig
JPH07142298A (en) * 1993-11-16 1995-06-02 Japan Aviation Electron Ind Ltd Anodic bonding equipment
JPH07254717A (en) * 1994-11-28 1995-10-03 Toshiba Corp Joining method of silicon crystal bodies

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2007043254A1 (en) * 2005-10-12 2009-04-16 株式会社村田製作所 Joining device
US7793698B2 (en) 2005-10-12 2010-09-14 Murata Manufacturing Co., Ltd. Bonding device
JP4941305B2 (en) * 2005-10-12 2012-05-30 株式会社村田製作所 Joining device
WO2007043254A1 (en) * 2005-10-12 2007-04-19 Murata Manufacturing Co., Ltd. Bonding apparatus
JP2009535823A (en) * 2006-04-28 2009-10-01 ヒューレット−パッカード デベロップメント カンパニー エル.ピー. Manufacturing tool for bonding
JP2012054416A (en) * 2010-09-01 2012-03-15 Nikon Corp Pressing device, lamination apparatus, lamination method, and method of manufacturing multilayer semiconductor device
JP2012059758A (en) * 2010-09-06 2012-03-22 Tokyo Ohka Kogyo Co Ltd Device and method for bonding
JP2012160628A (en) * 2011-02-02 2012-08-23 Sony Corp Substrate bonding method and substrate bonding device
JP2018041971A (en) * 2011-08-12 2018-03-15 エーファウ・グループ・エー・タルナー・ゲーエムベーハー Bonding device of substrate and method
JP2013120901A (en) * 2011-12-08 2013-06-17 Tokyo Electron Ltd Bonding method, program, computer storage medium, bonding device and bonding system
JP2013120902A (en) * 2011-12-08 2013-06-17 Tokyo Electron Ltd Bonding method, program, computer storage medium, bonding device and bonding system
WO2019146424A1 (en) * 2018-01-23 2019-08-01 東京エレクトロン株式会社 Substrate processing device and substrate processing method
CN111615739A (en) * 2018-01-23 2020-09-01 东京毅力科创株式会社 Substrate processing apparatus and substrate processing method
US11482431B2 (en) 2018-01-23 2022-10-25 Tokyo Electron Limited Substrate processing apparatus and substrate processing method
TWI782171B (en) * 2018-01-23 2022-11-01 日商東京威力科創股份有限公司 Substrate processing equipment
CN111615739B (en) * 2018-01-23 2024-06-07 东京毅力科创株式会社 Substrate processing apparatus and substrate processing method

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