JPH09260322A - Cleaner - Google Patents

Cleaner

Info

Publication number
JPH09260322A
JPH09260322A JP8096090A JP9609096A JPH09260322A JP H09260322 A JPH09260322 A JP H09260322A JP 8096090 A JP8096090 A JP 8096090A JP 9609096 A JP9609096 A JP 9609096A JP H09260322 A JPH09260322 A JP H09260322A
Authority
JP
Japan
Prior art keywords
brush
wafer
cleaning
center
foreign matter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP8096090A
Other languages
Japanese (ja)
Inventor
Kaoru Sato
薫 佐藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Steel Corp
Original Assignee
Nippon Steel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Steel Corp filed Critical Nippon Steel Corp
Priority to JP8096090A priority Critical patent/JPH09260322A/en
Publication of JPH09260322A publication Critical patent/JPH09260322A/en
Withdrawn legal-status Critical Current

Links

Abstract

PROBLEM TO BE SOLVED: To prevent a brush from gathering foreign matters and staining a wafer and thereby increase a washing efficiency at the time of washing a wafer with a brush. SOLUTION: A washing brush 6, being rotated, is brought into contact with a wafer which is being rotated, to scan the wafer 1. Many fine hairs 11 of the brush 6 are so formed that they may become shorter toward the periphery of the brush and be projecting most at the center to form a nearly cone-like brush. At the center of the brush, a suction nozzle 12 for sucking processing liquid and foreign matters is installed. By the suction nozzle 12, the foreign mattress removed from on the wafer 1 can be swept out of the fine hairs 11 of the brush efficiently. By sucking the washings including the foreign matters by the suction nozzle 12, the washings and the foreign matters are prevented from being gathered at the center of the fine hairs 11 of the brush and the flow rate of the washings at a contact section between the fine hairs 11 of the brush and the wafer 1 can be increased and thereby a washing efficiency can be improved.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【発明の属する技術分野】本発明は、半導体製造工程に
おける半導体基板上の異物や汚れ等を洗浄ブラシにより
除去する洗浄装置に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a cleaning device for removing foreign matters, dirt and the like on a semiconductor substrate in a semiconductor manufacturing process with a cleaning brush.

【0002】[0002]

【従来の技術】図3は半導体製造工程における半導体ウ
エハ上の異物や汚れ等を除去する洗浄装置の一従来例を
示すものである。図3において、ウエハ21がウエハ支
持台22上に保持され、モータ23によりウエハ支持台
22即ちウエハ21を回転させながら、処理液ノズル2
4によりウエハ21上に洗浄液を供給する。この状態
で、アーム25に支持された洗浄ブラシ26を回転させ
ながらウエハ21の表面に接触させ、アーム25の移動
によりブラシ26をウエハ21の中心から外周方向にス
キャンさせて、ブラシ26により異物の除去を行う。
2. Description of the Related Art FIG. 3 shows a conventional example of a cleaning apparatus for removing foreign matters and dirt on a semiconductor wafer in a semiconductor manufacturing process. In FIG. 3, the wafer 21 is held on the wafer support 22 and the processing liquid nozzle 2 is rotated while the wafer 23 is rotated by the motor 23.
4, the cleaning liquid is supplied onto the wafer 21. In this state, the cleaning brush 26 supported by the arm 25 is brought into contact with the surface of the wafer 21 while rotating, and the movement of the arm 25 causes the brush 26 to scan in the outer peripheral direction from the center of the wafer 21 so that the brush 26 removes foreign matter. Remove.

【0003】図4は上記洗浄装置における洗浄ブラシ2
6の拡大図である。ブラシ26は、円形のブラシ台27
と均一な長さの多数の細毛28とにより構成され、ウエ
ハ1の表面に接触する細毛28の先端側は、全体的に平
坦面となるように揃えられている。
FIG. 4 shows the cleaning brush 2 in the cleaning device.
FIG. 6 is an enlarged view of FIG. The brush 26 has a circular brush base 27.
And a plurality of fine bristles 28 having a uniform length, and the tip side of the fine bristles 28 contacting the surface of the wafer 1 are aligned so as to be a flat surface as a whole.

【0004】[0004]

【発明が解決しようとする課題】上記従来の半導体ウエ
ハの洗浄装置においては、均一な長さで先端側が平坦に
揃えられた細毛28を有するブラシ26を回転させなが
ら、回転されるウエハ21の中心から周縁方向にブラシ
26を移動させて洗浄を行っていた。この際、ブラシ細
毛28の先端側が全体的にウエハ21に接触しているの
で、ウエハ21より除去した異物をブラシ細毛28が引
きずりながら巻き込んでしまい、洗浄効果が低下すると
いう問題があった。
In the conventional semiconductor wafer cleaning apparatus described above, the center of the wafer 21 to be rotated is rotated while the brush 26 having the fine bristles 28 having a uniform length and having the tip ends evenly aligned is rotated. Therefore, the brush 26 is moved in the peripheral direction to clean the same. At this time, since the tip end side of the brush bristles 28 is entirely in contact with the wafer 21, the foreign matter removed from the wafer 21 is caught while being dragged by the brush bristles 28, and there is a problem that the cleaning effect is deteriorated.

【0005】また、ブラシ細毛28の先端側の面内で均
一にウエハ21を押さえ付ける力が働くため、ブラシ細
毛28の中心方向に取り込まれた異物がブラシ細毛28
の外に掃き出され難く、その異物がウエハ21上に押し
付けられて残存してしまうという問題があった。さら
に、洗浄の開始及び終了でブラシ細毛28をウエハ21
に対して接離させる際、ブラシ細毛28内に溜まった異
物がウエハ21に付着してしまう問題もある。なお、ブ
ラシ細毛28内から異物が排出されるように、ウエハ2
1上に供給する洗浄液の水流を上げすぎると、ブラシ細
毛28がウエハ21の表面から浮上してしまうことにな
る。
Further, since a force that presses the wafer 21 uniformly within the surface of the tip end of the brush bristles 28 acts, foreign matter taken in the center direction of the brush bristles 28 is absorbed.
There is a problem that it is difficult to be swept out of the wafer and the foreign matter is pressed against the wafer 21 and remains. Further, the brush bristles 28 are removed from the wafer 21 at the start and end of cleaning.
There is also a problem that foreign matter accumulated in the brush bristles 28 adheres to the wafer 21 when they are brought into contact with and separated from each other. It should be noted that the wafer 2 is so arranged that foreign matter is discharged from the brush bristles 28.
If the water flow of the cleaning liquid supplied to the upper part of 1 is raised too much, the brush bristles 28 will float above the surface of the wafer 21.

【0006】そこで本発明は、上述のような問題点を解
決するためになされたもので、半導体基板を洗浄ブラシ
により洗浄する際に、ブラシが異物を滞留して汚損され
ることを防止すると共に、洗浄効果を向上させることが
できる洗浄装置を提供することを目的とする。
Therefore, the present invention has been made in order to solve the above-mentioned problems, and prevents foreign matter from accumulating on the brush when cleaning the semiconductor substrate with the cleaning brush, and at the same time. An object of the present invention is to provide a cleaning device capable of improving the cleaning effect.

【0007】[0007]

【課題を解決するための手段】上記目的を達成するため
に、本発明は、半導体基板上の異物や汚れ等を洗浄ブラ
シにより除去する洗浄装置において、前記洗浄ブラシを
構成する細毛が、ブラシ中心部が最長でブラシ外周部が
最短になるように、ブラシ中心部からブラシ外周部に向
かって長さが変化するように形成されていることを特徴
とする。また、前記の洗浄装置において、前記洗浄ブラ
シのブラシ中心部に通孔を有し、前記通孔より処理液及
び異物を吸引する吸引手段を備えたことを特徴とする。
In order to achieve the above object, the present invention provides a cleaning device for removing foreign matters, dirt, etc. on a semiconductor substrate with a cleaning brush, wherein the fine bristles constituting the cleaning brush are centered on the brush. It is characterized in that the length is changed from the central portion of the brush toward the outer peripheral portion of the brush so that the portion is longest and the outer peripheral portion is shortest. Further, the cleaning apparatus is characterized in that the cleaning brush is provided with a through hole at a brush central portion thereof, and suction means for sucking the processing liquid and the foreign matter through the through hole.

【0008】[0008]

【作用】本発明においては、洗浄ブラシの中心部から外
周部に向かって長さが短くなるようなブラシ細毛を備え
ることによって、半導体基板を洗浄するために洗浄ブラ
シを基板上で一定方向にスキャンさせた場合、ブラシ中
心部から外周部に向かう程、ブラシ細毛が異物を基板上
で押さえ付ける力が弱くなり、このとき、スキャン方向
へ異物を掃き出す力の成分はブラシ細毛の外周方向に向
かって均一のため、異物を効率良く掃き出すことができ
る。また、基板上から除去された異物を含む洗浄液をブ
ラシ中心部の通孔により吸引することによって、ブラシ
細毛の中心部での洗浄液及び異物の滞留を防ぐと同時
に、ブラシ細毛と基板との接触部位における洗浄液の流
速を上昇させることができ、洗浄効果を向上させること
ができる。
In the present invention, the cleaning brush is provided with the brush bristles whose length becomes shorter from the central portion to the outer peripheral portion of the cleaning brush, so that the cleaning brush is scanned in a certain direction on the substrate for cleaning the semiconductor substrate. In this case, the force of the brush bristles pressing the foreign matter on the substrate becomes weaker from the center of the brush toward the outer periphery, and at this time, the component of the force for sweeping the foreign matter in the scanning direction is toward the outer periphery of the brush bristles. Due to the uniformity, foreign matter can be swept out efficiently. Further, by sucking the cleaning liquid containing the foreign matter removed from the substrate through the through hole at the center of the brush, the cleaning liquid and the foreign matter are prevented from staying at the center of the brush bristles, and at the same time, the contact portion between the brush bristles and the substrate. It is possible to increase the flow rate of the cleaning liquid in the above step and improve the cleaning effect.

【0009】[0009]

【発明の実施の形態】以下、本発明の実施の形態による
半導体ウエハの処理装置について図1及び図2を参照し
て説明する。図1は装置の概略構成図及び概略斜視図、
図2はブラシ部分の拡大断面図である。
DETAILED DESCRIPTION OF THE INVENTION A semiconductor wafer processing apparatus according to an embodiment of the present invention will be described below with reference to FIGS. FIG. 1 is a schematic configuration diagram and schematic perspective view of the apparatus,
FIG. 2 is an enlarged sectional view of the brush portion.

【0010】図1において、半導体基板であるウエハ1
は例えばフッ素樹脂で形成されたウエハ支持台2上に保
持され、そのウエハ支持台2はモータ3により回転駆動
される。ウエハ1の上方には洗浄用の処理液をウエハ1
の全面に供給するための処理液ノズル4が配置されてい
る。また、ウエハ1の上方には水平回動及び垂直移動可
能なアーム5が配設され、このアーム5の先端に回転駆
動される洗浄ブラシ6が支持されている。アーム5はス
キャンモータ7により回動され、これによりブラシ6は
ウエハ1上を略半径方向にスキャンされる。
In FIG. 1, a wafer 1 which is a semiconductor substrate
Is held on a wafer support base 2 made of, for example, fluororesin, and the wafer support base 2 is rotationally driven by a motor 3. A cleaning treatment liquid is placed above the wafer 1.
A treatment liquid nozzle 4 for supplying the entire surface of the treatment liquid nozzle. Further, an arm 5 which is horizontally rotatable and vertically movable is arranged above the wafer 1, and a cleaning brush 6 which is rotationally driven is supported at the tip of the arm 5. The arm 5 is rotated by the scan motor 7, so that the brush 6 scans the wafer 1 in a substantially radial direction.

【0011】図2に示すように、上記洗浄ブラシ6は、
円形のブラシ台10とこれに植設された多数の細毛11
とにより構成され、細毛11はブラシ中心部から外周部
に向かって長さが短くなっていくように形成されてい
る。即ち、ウエハ1の表面に接触する多数の細毛11の
先端側は、ブラシ中心部が最も突出して全体的に略円錐
状の斜面となるように揃えられている。なお、本実施形
態では、ブラシ6の外径を15〜20mm程度とし、細
毛11は直径が0.1mmで材質がナイロンのものを用
いた。細毛11の長さは、最内周部で10.0mm、最
外周部で8.5mmとした。
As shown in FIG. 2, the cleaning brush 6 is
A circular brush stand 10 and a large number of fine bristles 11 planted on it
And the fine bristles 11 are formed so that the length thereof decreases from the central portion of the brush toward the outer peripheral portion. That is, the tip ends of the many fine bristles 11 contacting the surface of the wafer 1 are aligned so that the brush center portion is most protruded and the whole is a substantially conical slope. In this embodiment, the brush 6 has an outer diameter of about 15 to 20 mm, and the fine bristles 11 have a diameter of 0.1 mm and are made of nylon. The length of the fine bristles 11 was 10.0 mm at the innermost peripheral portion and 8.5 mm at the outermost peripheral portion.

【0012】また、図2に示すように、ブラシ6の中心
部には吸引ノズル12が設けられ、この吸引ノズル12
の先端が細毛11の部分に突出されている。そして、図
1に示すように、吸引ノズル12より処理液及び異物を
吸引するための吸引機構8が備えられている。
Further, as shown in FIG. 2, a suction nozzle 12 is provided at the center of the brush 6, and the suction nozzle 12 is provided.
Is projected at the portion of the fine hair 11. Then, as shown in FIG. 1, a suction mechanism 8 for sucking the processing liquid and the foreign matter from the suction nozzle 12 is provided.

【0013】次に、本実施形態の装置による洗浄方法の
一例について説明する。まず、ウエハ支持台2上にウエ
ハ1を例えば真空吸着により固定し、モータ3を500
〜1500rpmで回転させた。続いて、処理液ノズル
4から処理液、例えば純水をウエハ1上に0.8リット
ル/minで連続的に供給した。
Next, an example of the cleaning method by the apparatus of this embodiment will be described. First, the wafer 1 is fixed on the wafer support base 2 by, for example, vacuum suction, and the motor 3 is set to 500.
Rotated at ~ 1500 rpm. Then, the treatment liquid, for example, pure water, was continuously supplied onto the wafer 1 from the treatment liquid nozzle 4 at 0.8 liter / min.

【0014】この状態で、ブラシ6を500rpmで回
転させながらウエハ1の表面に接触させ、アーム5をウ
エハ1の中心部から外周部に向かって複数回スキャンし
て異物の除去洗浄を行った。この際、吸引機構8により
ブラシ6の吸引ノズル12から処理液及び異物を吸引し
た。
In this state, the brush 6 was brought into contact with the surface of the wafer 1 while rotating at 500 rpm, and the arm 5 was scanned a plurality of times from the central portion of the wafer 1 toward the outer peripheral portion to remove and clean the foreign matter. At this time, the treatment liquid and the foreign matter were sucked from the suction nozzle 12 of the brush 6 by the suction mechanism 8.

【0015】このようにブラシ6をウエハ1上で一定方
向にスキャンさせた場合、ブラシ細毛11は中心部から
外周部に向かって長さが短いので、ブラシ中心部から外
周部に向かう程、ブラシ細毛11が異物をウエハ1上で
押さえ付ける力が弱くなる。このとき、スキャン方向へ
異物を掃き出す力の成分はブラシ細毛11の外周方向に
向かって均一のため、異物を効率良く掃き出すことがで
きた。
In this way, when the brush 6 is scanned on the wafer 1 in a certain direction, the length of the brush bristles 11 is shorter from the central portion to the outer peripheral portion. The force by which the fine bristles 11 press the foreign matter on the wafer 1 becomes weak. At this time, since the component of the force for sweeping the foreign matter in the scanning direction is uniform toward the outer peripheral direction of the brush bristles 11, the foreign matter could be swept efficiently.

【0016】また、ウエハ1上から除去された異物を含
む洗浄液をブラシ中心部の吸引ノズル12により吸引す
ることによって、ブラシ細毛11の中心部での洗浄液及
び異物の滞留を防ぐと同時に、ブラシ細毛11とウエハ
1との接触部位における洗浄液の流速を上昇させること
ができ、洗浄効果を向上させることができた。
Further, the cleaning liquid containing the foreign matter removed from the wafer 1 is sucked by the suction nozzle 12 at the center of the brush to prevent the cleaning liquid and the foreign matter from staying at the center of the brush bristles 11, and at the same time It was possible to increase the flow rate of the cleaning liquid at the contact portion between 11 and the wafer 1 and improve the cleaning effect.

【0017】所望の異物除去が完了した後、ブラシ6を
ウエハ1より離し、処理液ノズル4からの処理液の供給
を止め、モータ3を3500rpmで回転させてウエハ
1の乾燥を行い、洗浄を完了した。
After the desired foreign matter is removed, the brush 6 is separated from the wafer 1, the supply of the processing liquid from the processing liquid nozzle 4 is stopped, the motor 3 is rotated at 3500 rpm to dry the wafer 1, and the cleaning is performed. Completed.

【0018】以上、本発明の実施の形態について説明し
たが、本発明は上記実施形態に限定されることなく、本
発明の技術的思想に基づいて各種の有効な変更並びに応
用が可能である。例えば、ブラシ細毛の先端側の傾斜状
態は、ブラシの大きさや押込量、細毛の長さや材質等に
よって、適宜に設定し得るのは言うまでもない。
Although the embodiments of the present invention have been described above, the present invention is not limited to the above embodiments, and various effective modifications and applications are possible based on the technical idea of the present invention. For example, it goes without saying that the tip end side of the brush bristles can be appropriately set depending on the size and pushing amount of the brush, the length and material of the bristles, and the like.

【0019】[0019]

【発明の効果】以上説明したように、本発明によれば、
洗浄ブラシの中心部から外周部に向かって長さが短くな
るようなブラシ細毛によって、異物をブラシ細毛の外に
効率良く掃き出すことが可能となる。また、ブラシ中心
部の吸引ノズルより基板から除去された異物を含む洗浄
液を吸引することによって、ブラシ中心部での洗浄液及
び異物の滞留を防止すると同時に、ブラシと基板との接
触部位における洗浄液の流速を上昇させることが可能と
なる。これにより、ブラシが異物を滞留して汚損される
ことを防止すると共に、洗浄効果を大幅に向上させるこ
とができる。
As described above, according to the present invention,
The foreign matter can be efficiently swept out of the brush bristles by the brush bristles whose length decreases from the central portion to the outer peripheral portion of the cleaning brush. Further, by sucking the cleaning liquid containing the foreign matter removed from the substrate from the suction nozzle in the center of the brush, the cleaning liquid and the foreign matter are prevented from staying in the center of the brush, and at the same time, the flow velocity of the cleaning liquid at the contact area between the brush and the substrate. Can be raised. As a result, the brush can be prevented from accumulating foreign matter and being contaminated, and the cleaning effect can be significantly improved.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の実施の形態における半導体ウエハの洗
浄装置を示し、(a)は概略構成図、(b)は概略斜視
図である。
FIG. 1 shows a semiconductor wafer cleaning apparatus according to an embodiment of the present invention, in which (a) is a schematic configuration diagram and (b) is a schematic perspective view.

【図2】上記洗浄装置におけるブラシ部分の拡大断面図
である。
FIG. 2 is an enlarged cross-sectional view of a brush portion of the cleaning device.

【図3】従来の半導体ウエハの洗浄装置の概略構成図で
ある。
FIG. 3 is a schematic configuration diagram of a conventional semiconductor wafer cleaning apparatus.

【図4】上記従来の洗浄装置におけるブラシ部分の拡大
断面図である。
FIG. 4 is an enlarged sectional view of a brush portion in the conventional cleaning device.

【符号の説明】[Explanation of symbols]

1 ウエハ 2 ウエハ支持台 3 モータ 4 処理液ノズル 5 アーム 6 洗浄ブラシ 7 スキャンモータ 8 吸引機構 10 ブラシ台 11 ブラシ細毛 12 吸引ノズル 1 Wafer 2 Wafer Support 3 Motor 4 Processing Liquid Nozzle 5 Arm 6 Cleaning Brush 7 Scan Motor 8 Suction Mechanism 10 Brush Stand 11 Brush Hair 12 Suction Nozzle

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】 半導体基板上の異物や汚れ等を洗浄ブラ
シにより除去する洗浄装置において、 前記洗浄ブラシを構成する細毛が、ブラシ中心部が最長
でブラシ外周部が最短になるように、ブラシ中心部から
ブラシ外周部に向かって長さが変化するように形成され
ていることを特徴とする洗浄装置。
1. A cleaning device for removing foreign matters, dirt, and the like on a semiconductor substrate with a cleaning brush, wherein the fine bristles forming the cleaning brush have a long brush center and a short outer brush center. A cleaning device, wherein the cleaning device is formed so that the length changes from the portion toward the outer peripheral portion of the brush.
【請求項2】 前記洗浄ブラシのブラシ中心部に通孔を
有し、前記通孔より処理液及び異物を吸引する吸引手段
を備えたことを特徴とする請求項1記載の洗浄装置。
2. The cleaning device according to claim 1, further comprising: a suction unit that has a through hole in the brush center portion of the cleaning brush and that sucks the processing liquid and the foreign matter through the through hole.
JP8096090A 1996-03-26 1996-03-26 Cleaner Withdrawn JPH09260322A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8096090A JPH09260322A (en) 1996-03-26 1996-03-26 Cleaner

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8096090A JPH09260322A (en) 1996-03-26 1996-03-26 Cleaner

Publications (1)

Publication Number Publication Date
JPH09260322A true JPH09260322A (en) 1997-10-03

Family

ID=14155706

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8096090A Withdrawn JPH09260322A (en) 1996-03-26 1996-03-26 Cleaner

Country Status (1)

Country Link
JP (1) JPH09260322A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010047119A1 (en) * 2008-10-23 2010-04-29 昭和電工株式会社 Apparatus for cleaning substrate for magnetic recording medium, and method for cleaning substrate for magnetic recording medium
KR101042316B1 (en) * 2009-08-12 2011-06-17 세메스 주식회사 Substrate treating apparatus and method
CN102909185A (en) * 2012-10-26 2013-02-06 世成电子(深圳)有限公司 Cleaning machine
JP2013051396A (en) * 2011-08-03 2013-03-14 Tokyo Electron Ltd Liquid processing apparatus and liquid processing method
CN106733797A (en) * 2016-12-27 2017-05-31 宁夏软件工程院有限公司 One kind electrolysis electroplating workshop ground waste-liquid cleaning device
CN107470198A (en) * 2016-06-07 2017-12-15 宁波江丰电子材料股份有限公司 Method for wiping the rotating disk of sputtering target material and wiping sputtering target material
TWI611848B (en) * 2012-12-06 2018-01-21 Ebara Corp Substrate cleaning device and substrate cleaning method

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010047119A1 (en) * 2008-10-23 2010-04-29 昭和電工株式会社 Apparatus for cleaning substrate for magnetic recording medium, and method for cleaning substrate for magnetic recording medium
KR101042316B1 (en) * 2009-08-12 2011-06-17 세메스 주식회사 Substrate treating apparatus and method
JP2013051396A (en) * 2011-08-03 2013-03-14 Tokyo Electron Ltd Liquid processing apparatus and liquid processing method
CN102909185A (en) * 2012-10-26 2013-02-06 世成电子(深圳)有限公司 Cleaning machine
TWI611848B (en) * 2012-12-06 2018-01-21 Ebara Corp Substrate cleaning device and substrate cleaning method
CN107470198A (en) * 2016-06-07 2017-12-15 宁波江丰电子材料股份有限公司 Method for wiping the rotating disk of sputtering target material and wiping sputtering target material
CN106733797A (en) * 2016-12-27 2017-05-31 宁夏软件工程院有限公司 One kind electrolysis electroplating workshop ground waste-liquid cleaning device

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