JPH09245649A - Manufacture of flat-panel for display, flat-panel display panel and flat-panel image forming device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To eliminate necessity for a large burning furnace so as to facilitate temperature control, reduce the cost of manufacturing, and smooth a shape of a connection part and reduce damages, by using a connection ring in the case of connecting an envelope and an exhaust pipe. SOLUTION: Each constitutional member of face plate 1, a support frame 2, a rear plate 3, a connection ring 8, or the like are simultaneously fused and fixed by frit glasses 4, 6, and an envelope 5 is manufactured. Further, a two-step, method may be used in such manner that first, 2 to 3 members are fused, next, the rest is fused. In the case of these fusing, a burning furnace used is only required to be a little larger than the envelope 5 provided with the ring 8. Next, an exhaust pipe 9 is fitted together inside a fused part of the ring 8, to be positioned and fixed, thereafter a crossing part, by a rotated ring burner 10, is uniformly heated, fused, annealed and fixed. Thereafter, the exhaust pipe 9 is connected to a vacuum exhaust system, after performing treatment necessary for manufacturing a display panel, to be sealed.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a flat panel display panel, a flat panel display panel manufactured by the method, and an image forming apparatus.

[0002]

2. Description of the Related Art Conventionally, flat panel display panels using electron emission, flat panel display panels using plasma discharge, etc. have been proposed as flat panel display panels. The flat panel display panel is characterized by being thinner and lighter than a CRT having the same screen size.

Such a flat panel display panel is provided with an envelope which is a vacuum container in which a face plate, a rear plate and the like are joined, and an exhaust pipe is connected to an exhaust hole provided in the envelope. The exhaust pipe is connected to an external vacuum exhaust system for creating a vacuum inside the envelope.

FIG. 19 shows a conventional example of a method of connecting the exhaust pipe and the envelope (Japanese Patent Laid-Open No. 6-139961). In the figure, 201 is an envelope, 202 is an exhaust pipe made of glass, 203 is a doughnut-shaped low-melting glass tablet, 204 is an exhaust hole provided in the envelope (201),
Reference numeral 05 is a stepped portion.

Such an envelope (201) and an exhaust pipe (2
02) is connected as follows. First, a low melting glass tablet (203) formed by molding a low melting glass into a thin donut shape is arranged around the exhaust hole (204), and the exhaust pipe (202) is stepped using a jig (not shown). Fit it on the attachment part (205) and position it. Then
The entire envelope is put in a firing furnace, heated to the working temperature of the low melting point glass, and fused. Hereinafter, this step is called firing. Then, the temperature is lowered and the jig is removed to complete the connection between the envelope (201) and the exhaust pipe (202). The low-melting-point glass tablet (203) is melted and fixed, so that the exhaust pipe (202) and the envelope (201) are connected in an airtight state.

Next, a conventional technique for the electron-emitting device will be described. Conventionally, two types of electron-emitting devices are known, that is, a thermoelectron-emitting device and a cold cathode electron-emitting device.
The cold cathode electron-emitting device includes a field emission type (hereinafter referred to as “FE type”).
That. ), Metal / insulating layer / metal type (hereinafter “MIM type”)
That. ), And a surface conduction electron-emitting device type. F
Examples of E type are WP Dyke & WWDoran, "Field Emissi
on ", Advance in Electron Physics, 8.89 (1956) or C.
A.Spindt "Physical Properties of thin-film field e
mission cathodes with molybdenium cones ", J.Appl.Ph
The one disclosed in ys., 47, 5248 (1976) is known. As an example of the MIM type, CAMead, "Operation of T
unnel-Emission Devices ", J.Appl.Phys., 32,646 (1961)
And the like are known. Examples of the surface conduction electron-emitting device type include MIElinson, Radio Eng. Electr
on Phys., 10.1290 (1965) and the like.

In the surface conduction electron-emitting device, electrons are emitted by passing a current through a small area thin film formed on a substrate in parallel with the film surface. As the surface conduction electron-emitting device, one using a SnO ₂ thin film by the above-mentioned Erinson, one using an Au thin film (G. Dittmer, Thin Solid Film) is used.
ms, 9,317 (1972)), In ₂ O ₃ / SnO ₂ thin film (M. Hartwell and CGFonstad, IEEE Trans.ED Conf., 5
19 (1975)), by carbon thin film (Hiraki Araki et al.,
Vacuum, Vol. 26, No. 1, p. 22 (1983)) and the like are reported.

In FIG. 20, as a typical example of these surface conduction electron-emitting devices, M. The element structure of Hartwell is shown typically. In the figure, 301 is a substrate,
Reference numeral 302 denotes a conductive thin film made of metal oxide or the like formed by sputtering in an H-shaped pattern. An electron emitting portion (303) is formed on the conductive thin film (302) by an energization process called energization forming described later. The interval La in the figure is set to 0.5 to 1 mm and Wa is set to about 0.1 mm.

Conventionally, in these surface conduction electron-emitting devices, it is general that the electron-emitting portion is formed in advance by conducting a current called an energization forming process on the conductive thin film (302) before emitting electrons. The energization forming is an electron in which a direct current voltage or a very slow rising voltage is applied to both ends of the conductive thin film to locally destroy, deform or alter the conductive thin film to make it an electrically high resistance state. Forming the emitting portion. Such an electron emitting portion is composed of a crack or the like formed in a part of the conductive thin film, and electrons are emitted from the vicinity of the crack or the like. In the surface conduction electron-emitting device that has been subjected to the energization forming process, a voltage is applied to the conductive thin film and a current is passed through the device, so that electrons are emitted from the electron-emitting portion.

Since the surface conduction electron-emitting device described above has a simple structure and is easy to manufacture, it has an advantage that a large number of devices can be arrayed over a large area. Therefore, applied research on charged beam sources, display devices, and the like, which make use of this feature, has been conducted. As an example in which a large number of surface-conduction type electron-emitting devices are formed in an array, a ladder-type electron source described later, that is, surface-conduction type electron-emitting devices are arranged in parallel, and both ends of each arranged device are wired ( An electron source in which a large number of connected element rows are arranged by common wiring) (Japanese Patent Application Laid-Open No. 64-031332, Japanese Patent Application Laid-Open No. 1-28) can be mentioned.
3749, JP-A-2-257552, etc.).

In recent years, particularly in image forming apparatuses such as display devices, flat panel display devices using liquid crystal have become popular in place of CRTs. However, since it is not a self-luminous type, there is a problem that it must be equipped with a backlight, and thus development of a self-luminous display device has been desired. The self-luminous display device is an image forming device that is a display device in which a plurality of surface conduction electron-emitting devices are arranged in an electron source and a phosphor that emits visible light by electrons emitted from the electron source is combined. (For example, USP5066
883).

[0012]

However, the above-mentioned conventional technique has the following two problems.

The first problem is that when the exhaust pipe is connected and fixed to the envelope, an extra space in the firing furnace is required by the height of the exhaust pipe, and the temperature uniformity and rise in the firing furnace are required. Since it is difficult to control the temperature such as warming and lowering, and the equipment is large, the manufacturing cost is high.

The second problem is that when the work is performed while connecting the vacuum exhaust system such as an external vacuum exhaust pump and the exhaust pipe, the relative positional relationship between the vacuum exhaust system and the envelope changes. In some cases, stress exceeding the allowable value may occur at the connection between the exhaust pipe and the envelope, resulting in damage to the connection. The change in the relative position is caused by thermal expansion or external force, and the place where the destruction occurs is the portion where the low melting point glass tablet is once melted and fixed. The shape of the low melting point glass tablet changes depending on the orientation of the envelope during firing and the temperature condition at that time, and the shape of the tablet cannot be controlled.

In addition, when the exhaust hole is provided in the envelope, it is necessary to perform a relatively difficult process such as forming a stepped portion in the exhaust hole, which is costly.

Therefore, an object of the present invention is to manufacture
Method of manufacturing a flat panel display panel capable of easily and firmly connecting an exhaust pipe and an envelope without requiring a large space in a baking furnace, and a flat panel display panel and a flat panel image forming apparatus manufactured by the method Is to provide.

[0017]

Means for Solving the Problems The present inventor has made various studies in order to achieve the above object, and as a result, completed the present invention.

According to a first aspect of the present invention, in a method of manufacturing a flat panel display panel having an envelope including at least a face plate and a rear plate and an exhaust pipe, a connecting ring is used in a step of connecting the exhaust pipe and the envelope. The present invention relates to a method for manufacturing a flat panel display panel, the method comprising:

A second aspect of the present invention is a method of manufacturing a flat panel display panel having an envelope including at least a face plate and a rear plate and an exhaust pipe, the step of connecting and fixing a connecting ring to the envelope, and The present invention relates to a method for manufacturing a flat panel display panel, which comprises a step of connecting an exhaust pipe to the connection ring and heating the mixture to fix the fusion.

A third aspect of the present invention relates to a method for manufacturing a flat panel display panel according to the second aspect of the present invention, in which heating is performed by a burner to fix the fusion.

A fourth aspect of the present invention relates to a method of manufacturing a flat panel display panel according to the second aspect of the present invention, in which heating is performed by an electric heating coil and fusion fixing is performed.

A fifth aspect of the present invention is any one of the first to fourth aspects of the present invention, in which, when the connecting ring and the exhaust pipe are connected, the fused portion of the connecting ring is fitted at least outside the exhaust pipe. Relates to a method for manufacturing a flat panel display panel.

A sixth aspect of the present invention is any one of the first to fourth aspects of the present invention, in which, when the connecting ring and the exhaust pipe are connected, the fused portion of the connecting ring is fitted at least inside the exhaust pipe. The present invention relates to a method for manufacturing a flat panel display panel.

In a seventh aspect of the present invention, the outer surface of the connecting ring is shaped so that the connecting portion between the exhaust pipe and the envelope has a smooth shape after fusion fixing. The present invention relates to a method for manufacturing a flat panel display panel according to any of the inventions.

An eighth aspect of the present invention is the flat panel display panel, wherein the flat panel display panel includes a surface conduction electron-emitting device.
~ It relates to a method for manufacturing a flat panel display panel according to any one of the seventh invention.

The ninth invention relates to a flat panel display panel manufactured by the method according to any one of the first to eighth inventions.

The tenth invention relates to a flat panel image forming apparatus having a flat panel display panel manufactured by the method of any one of the first to eighth inventions.

[0028]

DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below in detail with reference to the drawings.

1 to 4 are explanatory views (schematic cross-sectional views) of an exhaust pipe connecting portion of a flat panel display panel according to a first embodiment of the present invention. 1 shows a state in which a connection ring is provided on a rear plate, FIG. 2 shows a state before a connection ring is provided on a rear plate, and FIG. 3 shows a state before fusion fixing in which an exhaust pipe is connected to the connection ring. 4 shows the state after fusion fixing.

In these figures, 1 is a face plate provided with a fluorescent substance, 2 is a support frame, 3 is a rear plate provided with a surface conduction electron-emitting device, 4 and 6 are frit glasses, and 5 is a face plate ( It is an envelope having an airtight structure composed of 1), a support frame (2), a rear plate (3) and a frit glass (4). Reference numeral 7 is an exhaust hole provided in the rear plate (3), 8 is a connecting ring fused to the exhaust hole (7) by frit glass (6), 9 is an exhaust pipe, and 10 is a ring in which a burner is arranged in a ring shape. It is a burner.

When the connecting ring (8) is installed, it is preferable that the connecting ring (8) does not protrude to the inner side beyond the thickness of the components of the envelope (5) (for example, the thickness of the rear plate in FIG. 1).
It is desirable to increase the vacuum exhaust efficiency. Further, it is desirable that the connecting ring (8) has a curved surface on the outer surface so that the connecting portion between the exhaust pipe (9) and the envelope (5) has a smooth shape.

The face plate (1) according to the present invention,
Constituent members such as the support frame (2), the rear plate (3), the connection ring (8), and the exhaust pipe (9) are preferably made of materials having the same or substantially the same thermophysical properties such as coefficient of thermal expansion. For example, soda-lime glass can be used.

The sizes of the connection ring (8) and the exhaust pipe (9) can be set as follows, for example. The size of the connecting ring (8) is the outermost diameter (l) of 20 mm, the inner diameter (m) of the exhaust hole portion (m) of 11.8 mm, and the height (n) of 15 mm in FIG. (Fused part (a))
The length (o) was set to 5 mm, the wall thickness (p1 to p2) was set to 0.9 to 2 mm, and the inner diameter (q) was set to 12.2 mm. The size of the exhaust pipe (9) is 100 mm in length (r) and 12 in outer diameter (s) in FIG.
mm and wall thickness (t) 1 mm. Wall thickness (t) is 0.5 to 3 mm
Is appropriate. At this time, the frit glass (6) had a thickness of 0.05 to 0.2 mm, and the rear plate (3) had a thickness of 3.8 mm.

The frit glass (4, 6) is a low-melting glass having a coefficient of thermal expansion close to that of the above-mentioned constituent members, and is fired again at a working temperature (hereinafter referred to as "firing temperature") 440 to 450 ° C. It is desirable to use a composite glass that crystallizes so that it does not melt when fired. Further, in the method of manufacturing an envelope described later, the firing temperature may be about 410 ° C. and amorphous frit glass may be used.

In the present embodiment, the frit glass is a mixture of powder glass and a vehicle (a mixture of a binder and a solvent) (hereinafter referred to as "frit paste"). It was dried and calcined. Alternatively, it may be preliminarily molded into a thin sheet or a donut tablet for use.

In the firing step of manufacturing the envelope (5) and then fixing the connecting ring (8), several kinds of manufacturing methods are possible, but these do not cause a great difference in performance. Three manufacturing methods will be described below. Note that firing is performed using an appropriate jig (not shown).

(I) The constituent members such as the face plate, the support frame, the rear plate, and the connecting ring are simultaneously fused and fixed using frit glass.

(Ii) The face plate, the support frame, the rear plate and the like are fused and fixed using frit glass, and then the connection ring is fused and fixed using frit glass.

(Iii) The face plate and the support frame, and the rear plate and the connecting ring are fused and fixed using frit glass, and then they are fused and fixed using frit glass.

The place where the exhaust hole (7) is provided and the connection ring (8) is fused and fixed is not particularly limited as long as it is on the envelope (5).
That is, the face plate (1), the rear plate (3), and the support frame (2) are provided at desired positions. At that time, the exhaust hole can be a stepped through hole that can be easily processed by a drill or the like.

In the production of the envelope (5) according to the above production method (ii), first, the face plate (1) is coated with the frit glass (4) with a dispenser, followed by drying and calcination steps. The supporting frame (2) is positioned by a jig (not shown) (FIG. 2) and fired in a firing furnace. Then, the frit glass (4) is applied to the rear plate (3), and the face plate is positioned through the steps of drying and calcination, and the enclosure (5) is produced by firing in a firing furnace. Subsequently, frit glass (6) is applied around the exhaust hole (7), dried and pre-baked, the connection ring (8) is positioned using a jig (not shown), and baked in a baking furnace. Fix by fusion. The state at this time is shown in FIG. Here, the size of the inside of the firing furnace used for the above firing may be slightly larger than the envelope provided with the connection ring.

After the connection ring (8) is fused and fixed, the exhaust pipe (9) is fitted inside the fused portion (a) of the connection ring (8) and positioned using a jig (not shown). , Fix it. Then, the intersection (fusion portion) of the exhaust pipe (9) and the connecting ring (8) is heated to the working temperature (about 1000 ° C.) of each member by the ring burner (10) to perform fusion (see FIG. 3). ). In addition, the ring burner (10) can heat uniformly while rotating around the connection ring (8). After the heating, the exhaust pipe is completely fixed by cooling it while performing cleaning, and the connection and fixation with the envelope (5) is completed. After fusion fixing, as shown in FIG. 4, the exhaust pipe (9) and the envelope (5) are connected to each other by a connecting ring (8).
It is smoothly connected and fixed by.

After the exhaust pipe and the envelope have been connected and fixed as described above, this exhaust pipe is connected to an external vacuum exhaust system, and then the processes necessary for manufacturing the display panel (forming process, activation described later, activation). Treatment, etc., and then exhaust pipe (9)
By encapsulating in the middle, the flat panel display panel of the present invention was completed.

Next, a second embodiment of the present invention is shown in FIGS. FIG. 5 shows a state before fusion fixing the connection ring and the exhaust pipe, and FIG. 6 shows a state after fusion fixing.

The second embodiment is the same as the first embodiment except that the shape of the connecting ring is changed and that the electrothermal coil (12) is used instead of the ring burner (10).

As shown in FIG. 5, the connecting ring (11) has a shape in which the fused portion (b) of the connecting ring is fitted inside the exhaust pipe (9). Concrete connection ring (1
The size of 1) is, for example, 20 mm for the outermost diameter and 15 for the height.
It is possible to set the length to 5 mm, the wall thickness to 1 mm, and the inner diameter to 12.2 mm. The connecting ring (11) has a curved surface on the outer surface so that the connecting portion between the exhaust pipe (9) and the envelope (5) has a smooth shape.

Regarding the manufacturing method, the electric heating coil (12)
The same as in the first embodiment except that the exhaust pipe (9) was fitted to the outside of the fusion bonding part (b) of the connection ring (11), and fusion was performed from the outside using the electrothermal coil (12). Fixed After fusion fixing, as shown in FIG. 6, the envelope (5)
And the exhaust pipe (9) are connected smoothly by a connecting ring (11).

After that, the exhaust pipe (9) is connected to an external vacuum exhaust system, and similar processing to that of the first embodiment is performed such as a forming process and an activating process, which are necessary for the display panel. 9) was sealed to complete a flat panel display panel.

Next, a third embodiment is shown in FIGS. 7 and 8. FIG. 7 shows a state before the connection ring and the exhaust pipe are fused, and FIG. 8 shows a state after the fusion. This embodiment is the same as the first embodiment except that the shape of the connection ring is changed.

In the connecting ring (13), as shown in FIG. 7, the fused portion (c) of the connecting ring (13) is the exhaust pipe (9).
It has a shape that fits on the outside of. The specific size of the connection ring (13) is, for example, the outermost diameter (u) is 20 mm,
The height (v) is set to 5 mm, and the portion (fusion portion (c)) that is fitted and fused with the exhaust pipe has a length (w) of 2 mm and a wall thickness (x).
It can be set to 1 mm and an inner diameter (y) of 12.2 mm.

The manufacturing method is the same as in the first embodiment,
After fusion fixing, as shown in FIG. 8, the envelope (5) and the exhaust pipe (9) are smoothly connected by the connecting ring (13).

After that, the exhaust pipe (9) is connected to an external vacuum exhaust system, and necessary processing for the display panel such as forming processing and activation processing is performed as in the first embodiment, and the exhaust pipe ( 9) was sealed to complete a flat panel display panel.

The first, second, and third embodiments described above are not limited to flat panel display panels using surface conduction electron-emitting devices as electron sources, but also plasma discharge display panels, fluorescent display tubes, and electronic display panels. The same effect can be obtained in a flat panel display panel that utilizes the.

Hereinafter, an example using a surface conduction electron-emitting device as a preferred flat panel display panel and flat panel image forming apparatus of the present invention will be described in detail.

The basic structure of the surface conduction electron-emitting device of the present invention is roughly classified into two types: a plane type and a vertical type. First, the planar surface conduction electron-emitting device will be described.

9A and 9B are schematic views showing the structure of the flat surface conduction electron-emitting device according to the present invention. FIG. 9A is a plan view, and FIG. 9B is A- of FIG. 9A. It is an A line sectional view. In these figures, 101 is a substrate, and 102 and 103.
Is an element electrode, 104 is a conductive thin film, and 105 is an electron emitting portion.

As the substrate (101), quartz glass, N
It is possible to use glass in which the content of impurities such as a is reduced, soda lime glass, a glass substrate on which SiO ₂ is deposited by a sputtering method, a ceramic substrate such as alumina, or the like.

As the material of the element electrodes (102, 103), a general conductive material can be used.
・ Metal or alloy such as Au ・ Mo ・ W ・ Pt ・ Ti ・ Al ・ Cu ・ Pd and Pd ・ As ・ Ag ・ Au ・ Ru
It can be selected from a printed conductor composed of a metal such as O ₂ .Pd-Ag or a metal oxide and glass, a transparent conductor such as In ₂ O ₃ —SnO _{2 and} a semiconductor material such as polysilicon.

The device electrode interval (L), the device electrode length (W), the shape of the conductive thin film, etc. are designed in consideration of the applied form. The device electrode interval (L) is preferably in the range of several thousand angstroms to several hundreds of μm, and more preferably 1 to 1 in consideration of the voltage applied between the device electrodes.
The range is 100 μm.

The device electrode length (W) is in the range of several μm to several hundreds μm in consideration of the resistance value of the electrode and the electron emission characteristics. The film thickness (d) of the device electrodes (102, 103) is 10
It is in the range of 0 Å to 1 μm.

In addition to the structure shown in FIG. 9, a conductive thin film (104) and opposing element electrodes (102, 103) may be stacked in this order on the substrate (101).

The conductive thin film (104) is preferably a fine particle film composed of fine particles in order to obtain good electron emission characteristics. The film thickness is appropriately set in consideration of the step coverage to the device electrodes (102, 103), the resistance value between the device electrodes (102, 103), the forming conditions described later, and the like, but is usually several angstroms to several thousands. It is preferably in the range of angstrom, and more preferably in the range of 10 to 500 angstrom.
The resistance value of Rs is 10 ² to 10 ⁷ Ω. Here, Rs is a resistance R of a thin film having a thickness t, a width w and a length l.
Is a value obtained when R = Rs (l / w),
If the resistivity of the thin film material is ρ, then Rs = ρ / t.

The material constituting the conductive thin film (104) is
Pd, Pt, Ru, Ag, Au, Ti, In, Cu, C
Metals such as r, Fe, Zn, Sn, Ta, W, Pb, Pd
O ・ SnO ₂・ In ₂ O ₃・ PbO ・ Sb ₂ O ₃ etc. oxides, HfB ₂・ ZrB ₂・ LaB ₆・ CeB ₆・ YB ₄・ G
Borides such as dB ₄ , TiC / ZrC / HfC / TaC /
It is appropriately selected from carbides such as SiC / WC, nitrides such as TiN / ZrN / HfN, semiconductors such as Si / Ge, and carbon.

The fine particle film described here is a film in which a plurality of fine particles are aggregated, and its fine structure has a state in which the fine particles are individually dispersed and arranged or a state in which the fine particles are adjacent to each other or overlap each other (some fine particles are It also includes the case where they are aggregated to form an island structure as a whole). The particle size of the fine particles ranges from several angstroms to 1 μm,
It is preferably in the range of 10 to 200 angstrom.

The electron emitting portion (105) is made of a conductive thin film (1
It is constituted by a high-resistance crack formed in a part of 04) and depends on the film thickness, film quality and material of the conductive thin film (104) and a method such as energization forming described later. The inside of the electron emission portion (105) may contain conductive fine particles having a particle diameter of 1000 angstroms or less. The conductive fine particles contain a part or all of the elements of the material forming the conductive thin film (104). The electron emitting portion (105) and the conductive thin film (104) in the vicinity thereof may contain carbon or a carbon compound.

Next, the vertical surface conduction electron-emitting device will be described. FIG. 10 is a schematic view showing an example of a vertical surface conduction electron-emitting device according to the present invention. 106
Is a step forming portion which is a characteristic component of the vertical element. In FIG. 10, the same parts as those shown in FIG. 9 are designated by the same reference numerals as those shown in FIG. 9.

Substrate (101), device electrodes (102, 10)
3), the conductive thin film (104) and the electron emitting portion (105)
Can be made of the same material as in the case of the planar surface conduction electron-emitting device described above.

The step forming portion (106) can be formed by using an insulating material such as SiO ₂ by a vacuum vapor deposition method, a printing method, a sputtering method or the like. The film thickness of the step forming portion (106) corresponds to the device electrode interval (L) of the flat surface conduction electron-emitting device described above, and is in the range of several hundred angstroms to several tens of μm. This film thickness is set in consideration of the manufacturing method of the step forming portion and the voltage applied between the element electrodes, but is preferably in the range of several thousand angstroms to several μm.

The conductive thin film (104) is formed on the device electrode (10).
2, 103) and the step forming portion (106) are formed, they are then laminated on the device electrodes (102, 103). The electron emitting portion (105) is the step forming portion (106) in FIG.
Although it is formed on the side surface of the conductive thin film, it depends on the manufacturing conditions, forming conditions, etc., and the shape and position are not limited to this.

There are various methods for manufacturing the above-mentioned surface conduction electron-emitting device, one example of which will be described below with reference to FIG.

Step 1: The substrate (101) is thoroughly washed with a detergent, pure water, an organic solvent, etc., and a device electrode material is deposited by a vacuum deposition method, a sputtering method or the like, and then the substrate is formed using, for example, a photolithography technique. The device electrode (1
02, 103) are formed (FIG. 11A).

Step 2: An organic metal solution is applied to the substrate (101) provided with the device electrodes (102, 103) to form an organic metal thin film. As the organic metal solution, a solution of an organic metal compound containing a metal of the material of the conductive thin film as a main element is used. This organometallic thin film is heat-fired and patterned by lift-off, etching, etc. to form a conductive thin film (104) (FIG. 11B). Although the coating method of the organic metal solution has been described here, the method of forming the conductive thin film is not limited to this, and the vacuum deposition method, the sputtering method, the chemical vapor deposition method, the dispersion coating method, the dipping method, and the like. Method, spinner method, etc. can also be used.

Step 3: Next, a forming process is performed.
As an example of the forming processing method, a method by an energization processing will be described. When electricity is applied between the element electrodes (102, 103) using a power source (not shown), a conductive thin film (10
4), the electron emitting portion (105) is formed (FIG. 11).
(C)). According to the energization forming, the conductive thin film (10
In 4), a site having a structural change such as local destruction, deformation or alteration is formed. This portion becomes the electron emitting portion (105).

FIG. 12 shows an example of the voltage waveform of energization forming.
Shown in The voltage waveform is preferably a pulse waveform. The voltage is applied by continuously applying a pulse whose pulse peak value is a constant voltage (FIG. 12A), and by applying a voltage pulse while increasing the pulse peak value (FIG. 12B). ) There is.

In FIG. 12A, T1 and T2 are the pulse width and pulse interval of the voltage waveform, respectively. Usually T
1 for 1 microsecond to 10 milliseconds, T2 for 10 microseconds
It is set in the range of 100 milliseconds. The peak value of the triangular wave (peak voltage during energization forming) is appropriately selected according to the form of the surface conduction electron-emitting device. Under such conditions, for example, a voltage is applied for several seconds to several tens minutes. The pulse waveform is not limited to a triangular wave, and a desired waveform such as a rectangular wave can be adopted.

T1 and T2 in FIG. 12B are the same as those in FIG.
It can be the same as that shown in 2 (a). The peak value of the triangular wave (peak voltage during energization forming) is increased in steps of, for example, 0.1V.

The end of the energization forming process can be detected by applying a voltage that does not locally break or deform the conductive thin film (104) during the pulse interval T2 and measure the current. For example, the device current flowing by applying a voltage of about 0.1 V is measured, the resistance value is obtained, and the energization forming is terminated when a resistance of 1 M ohm or more is shown.

It is preferable to perform activation processing on the element which has been subjected to the above-mentioned forming processing. By performing the activation process, the device current If and the emission current Ie change remarkably. The activation treatment can be performed, for example, in an atmosphere containing a gas of an organic substance, by repeating application of a pulse as in the energization forming. The atmosphere in this activation treatment can be formed by using the organic gas remaining in the atmosphere when the inside of the vacuum container is evacuated using, for example, an oil diffusion pump or a rotary pump. It can also be obtained by introducing a gas of an appropriate organic substance into a sufficiently evacuated vacuum. At this time, the preferable gas pressure of the organic substance is the above-mentioned element form,
Since it varies depending on the shape of the vacuum container, the type of organic substance, etc., it is appropriately set depending on the case.

Suitable organic substances include organic hydrocarbons such as alkanes, alkenes, alkynes, aliphatic hydrocarbons, aromatic hydrocarbons, alcohols, aldehydes, ketones, amines, phenols, carboxylic acids and sulfonic acids. Acids and the like can be mentioned, and specifically, methane, ethane,
Saturated hydrocarbons represented by C _n H _{2n + 2} such as propane, unsaturated hydrocarbons represented by C _n H _2n such as ethylene and propylene, benzene, toluene, methanol, ethanol,
Formaldehyde, acetaldehyde, acetone, methyl ethyl ketone, methyl amine, ethyl amine, phenol, formic acid, acetic acid, propionic acid and the like can be used.

By such activation treatment, carbon or a carbon compound is deposited on the device from the organic substance existing in the atmosphere, and the device current If and the emission current Ie are significantly changed.

The end of the activation process is judged by the device current If.
And the emission current Ie are measured. The pulse width,
The pulse interval, pulse peak value, etc. are set appropriately.

The above-mentioned carbon or carbon compound means HO
PG (Highly Oriented PyrolyticGraphite), PG (P
Graphite such as yrolytic Graphite), GC (Glassy Carbon), etc. (HOPG is a graphite having a nearly complete crystal structure, PG is a graphite with a crystal grain of about 200 angstroms and the crystal structure is slightly disordered, and GC has 2 crystal grains.
It refers to the one in which the disorder of the crystal structure is further increased at about 0 Å. ) And amorphous carbon (amorphous carbon, and carbon containing a mixture of amorphous carbon and fine crystals of graphite). The thickness of these layers is preferably 500 angstroms or less, and more preferably 300 angstroms or less.

The electron-emitting device obtained through the above activation treatment is preferably subjected to stabilization treatment. This treatment is preferably carried out when the partial pressure of the organic substance in the vacuum container is 10 ^-8 Torr or less, preferably 10 ^-10 Torr or less. The pressure in the vacuum container is preferably 10 ^−6.5 to 10 ⁻⁷ Torr, and particularly 10 ^−8.
Torr or less is preferable. The vacuum exhaust device for exhausting the vacuum container preferably does not use oil so that the oil generated from the device does not affect the characteristics of the element. Specifically, a vacuum exhaust device such as a sorption pump and an ion pump can be used. Further, when exhausting the inside of the vacuum container, it is preferable to heat the entire vacuum container so that organic substance molecules adsorbed on the inner wall of the vacuum container or the electron-emitting device can be easily exhausted. At this time, the vacuum evacuation condition in the heated state is preferably 80 to 200 ° C. for 5 hours or more, but is not particularly limited to this condition, and various conditions such as the size and shape of the vacuum container and the configuration of the electron-emitting device. It changes with.
The partial pressure of the organic substance should be determined by measuring the partial pressure of an organic molecule having a mass number of 10 to 200 and having carbon and hydrogen as the main components by using a mass spectrometer and integrating the partial pressures. Can be obtained by

It is preferable that the atmosphere at the time of driving after the above-mentioned stabilization process is maintained as it is at the end of the stabilization process, but the present invention is not limited to this, and if the organic substance is sufficiently removed, Sufficient characteristics can be maintained even if the degree of vacuum itself is slightly lowered. By adopting such a vacuum atmosphere, the deposition of new carbon or carbon compound can be suppressed, and as a result, the device current If and the emission current Ie are stabilized.

Various arrangements of electron-emitting devices can be adopted, and a typical example is a ladder arrangement and a matrix arrangement.

In the ladder-like arrangement, a large number of electron-emitting devices are arranged in parallel, and each of these devices is connected at both ends to form a large number of electron-emitting device rows (hereinafter referred to as "device rows"). (Hereinafter, the direction of this element row is referred to as "row direction".), And the control electrode ("grid") arranged above these electron-emitting devices in a direction orthogonal to the wiring in these row directions (hereinafter referred to as "column direction"). Electrons emitted from the electron-emitting device are controlled and driven by the electrodes.

On the other hand, in the matrix arrangement, a plurality of electron-emitting devices are arranged in a matrix in the X and Y directions, and one of the electrodes of the plurality of electron-emitting devices arranged in the same row is commonly used for the wiring in the X direction. , And the other of the electrodes of the plurality of electron-emitting devices arranged in the same column is commonly connected to the wiring in the Y direction. This is a so-called simple matrix arrangement.

First, the simple matrix arrangement type electron source substrate and the display panel provided with the electron source substrate will be described in detail below. FIG. 13 shows an electron source substrate in which a plurality of electron-emitting devices according to the present invention are arranged in a matrix. In the figure, 107 is an electron source substrate, 108 is an X-direction wiring, and 109 is a Y-direction wiring. 110 is a surface conduction electron-emitting device, and 111 is a wire connection. The surface conduction electron-emitting device (110) may be either the flat type or the vertical type described above.

The m wirings in the X direction (108) are made of a conductive metal or the like, and are formed by using a vacuum deposition method, a printing method, a sputtering method or the like as shown by Dx1, Dx2, ..., Dxm in the figure. To be done. The material, film thickness, and width of these wirings are appropriately designed. Y
Direction wiring (109) is n of Dy1, Dy2, ..., Dyn.
It is composed of a book wire and is formed in the same manner as the X-direction wire (108). These m wires in the X direction (108) and n wires in the Y direction
An interlayer insulating layer (not shown) is provided between the directional wiring (109) and electrically insulates them.

The interlayer insulating layer (not shown) is made of SiO ₂ or the like and is formed by using the vacuum vapor deposition method, the printing method, the sputtering method or the like. For example, it is formed in a desired shape on the entire surface or a part of the substrate on which the X-direction wiring (108) is formed, and in particular, to withstand a potential difference at the intersection of the X-direction wiring (108) and the Y-direction wiring (109), The film thickness, material, manufacturing method, etc. are selected and set.

X-direction wiring (108) and Y-direction wiring (10)
9) is provided with an external terminal for each of them and is drawn out.

The pair of electrodes (not shown) forming the surface conduction electron-emitting device (110) are the X-direction wiring (108) and the Y-direction.
Directional wiring (109) and connection (11) made of conductive metal or the like.
It is electrically connected by 1).

X-direction wiring (108) and Y-direction wiring (10)
The material forming 9), the material forming the wire connection (111), and the material forming the pair of device electrodes may be the same or different in some or all of the constituent elements. These materials can be appropriately selected from the above-mentioned materials for the device electrodes. When the material forming the element electrode and the wiring material are the same, the wiring connected to the element electrode can also be referred to as an element electrode.

A scanning signal applying means (not shown) for applying a scanning signal for selecting a row of the surface conduction electron-emitting devices (110) arranged in the X direction is connected to the X-direction wiring (108). On the other hand, the Y direction wiring (109) is connected to a modulation signal generating means (not shown) for modulating each column of the surface conduction electron-emitting devices (110) arranged in the Y direction according to an input signal. The drive voltage applied to each surface conduction electron-emitting device is supplied as a difference voltage between the scanning signal and the modulation signal applied to the device.

By configuring the above simple matrix arrangement, individual elements can be selected and driven independently.

An image forming apparatus constituted by using the electron source substrate having such a simple matrix arrangement will be described below with reference to FIGS. 14, 15 and 16. 14 is a perspective view showing an example of a display panel of the image forming apparatus.
5 is a schematic view of a fluorescent film used in the image forming apparatus.
FIG. 16 is a block diagram showing an example of a drive circuit for performing display according to an NTSC television signal.

In FIG. 14, 107 is an electron source substrate on which a plurality of electron-emitting devices are arranged, and 112 is an electron source substrate (107).
A rear plate 117 on which a glass substrate (11
On the inner surface of 4), the fluorescent film (115) and the metal back (11)
6) is formed on the face plate. Reference numeral 113 denotes a support frame, and the rear plate (112) and the face plate (117) are joined to the support frame by using frit glass or the like. Reference numeral 119 denotes an envelope, and this sealing is performed, for example, by firing in the air or nitrogen in the temperature range of 400 to 500 ° C. for 10 minutes or more.

110 is a surface conduction electron-emitting device,
Reference numerals 108 and 109 denote an X-direction wiring and a Y-direction wiring connected to a pair of device electrodes of the surface conduction electron-emitting device, respectively.

The envelope (119) is composed of the face plate (117), the support frame (113) and the rear plate (112) as described above. Rear plate (112)
Is mainly provided for the purpose of reinforcing the strength of the electron source substrate (107), so that if the electron source substrate itself has sufficient strength, a separate rear plate may not be used. That is,
The envelope (119) may be formed by directly sealing the support frame (113) to the electron source substrate (107). Further, by providing a support body (not shown) called a spacer (atmospheric pressure resistant support member) between the face plate (117) and the rear plate (112), sufficient strength against atmospheric pressure can be obtained. It is also possible to construct an envelope having the same.

FIG. 15 is a schematic diagram showing a fluorescent film. The fluorescent film can be composed of only a phosphor in the case of monochrome. In the case of color, a black member (120) called a black stripe (FIG. 15A) or a black matrix (FIG. 15B) depending on the arrangement of the phosphors.
And a phosphor (121). In the case of color display, the purpose of providing the black stripes or the black matrix is to make the color mixture between the phosphors of the three primary color phosphors inconspicuous by making them black, and to reduce the contrast due to external light reflection. It is to suppress the decrease. As a material for the black stripe, other than a material mainly containing graphite which is usually used,
This can be used if it is a material that transmits and reflects light little. As a method for applying the phosphor to the glass substrate (114), a precipitation method, a printing method, or the like can be adopted regardless of monochrome or color.

A metal back (116) is usually provided on the inner surface side of the fluorescent film (115). The purpose of providing the metal back is to improve the luminance by specularly reflecting the light on the inner surface side of the light emission of the phosphor to the face plate (117) side, and to act as an electrode for applying an electron beam acceleration voltage. That is, the phosphor is protected from damage due to collision of negative ions generated in the envelope. The metal pack can be formed by performing a smoothing process (usually called “filming”) on the inner surface of the fluorescent film after forming the fluorescent film, and then depositing Al using vacuum deposition or the like.

The face plate (117) may be provided with a transparent electrode (not shown) on the outer surface side (glass substrate side) of the fluorescent film in order to further enhance the conductivity of the fluorescent film (115).

When the above-mentioned envelope is sealed, a collar is used.
In the case of, it is necessary to associate each color phosphor with the electron-emitting device.
However, sufficient alignment is essential. Shown in Figure 14
In the case of a display panel that has been manufactured, for example, it is manufactured as follows.
It is. The envelope (119) is the same as the stabilization processing described above.
Ion pump, sorption pump while heating appropriately
Exhaust pipe not shown by an exhaust device that does not use oil such as
Exhaust through 10 ^-7Of organic materials with a vacuum degree of Torr
After making the atmosphere sufficiently small, it is sealed. Envelope (11
9) Getter treatment to maintain the degree of vacuum after sealing
May be performed. This is the sealing of the envelope (119).
Immediately before or after sealing, apply resistance heating, high frequency heating, etc.
The position of the gate located at a predetermined position (not shown) inside the envelope.
It is a process of heating the substrate to form a vapor deposition film. Getter
Usually has Ba as a main component,
For example, 10^-Five-10^-7Maintaining Torr vacuum
Can be.

Next, an example of the configuration of a drive circuit for performing television display based on an NTSC television signal in a display panel constructed by using an electron source substrate having a simple matrix arrangement will be described with reference to FIG. To do. In the figure, 122 is a display panel, 123 is a scanning circuit, and 1
24 is a control circuit, 125 is a shift register, 126 is a line memory, 127 is a synchronizing signal separation circuit, 128 is a modulation signal generator, and Vx and Va are DC voltage sources.

The display panel (122) has terminals Dox1 to Dox.
It is connected to an external electric circuit via xm, terminals Doy1 to Doyn, and high-voltage terminal Hv. The terminals Dox1 to Doxm are connected to the electron source substrate provided in the display panel, that is, m.
A scanning signal is applied to sequentially drive the surface conduction electron-emitting device groups, which are arranged in a matrix of rows and n columns, row by row (n elements). A modulation signal for controlling the output electron beam of each element of the surface conduction electron-emitting devices in one row selected by the scanning signal is applied to the terminals Doy1 to Doyn. The high voltage terminal Hv is supplied with a DC voltage of, for example, 10 K [V] from a DC voltage source Va, which is sufficient to excite the phosphor into an electron beam emitted from the surface conduction electron-emitting device. It is an accelerating voltage for applying energy.

The scanning circuit (123) has m switching elements therein (S1 to Sm in FIG. 16).
Is shown schematically in). Each switching element selects either the output voltage of the DC voltage source Vx or 0 [V] (ground level), and is electrically connected to the terminals Dox1 to Doxm of the display panel (122). Each of the switching elements S1 to Sm operates on the basis of a control signal Tscan output from the control circuit (124).
It can be configured by combining switching elements such as ET.

In the case of the present example, the DC voltage source Vx is based on the characteristics (electron emission threshold voltage) of the surface conduction electron-emitting device, and the driving voltage applied to the unscanned device emits electrons. It is set to output a constant voltage that is equal to or less than the value voltage.

The control circuit (124) has a function of matching the operation of each part so that an appropriate display is performed based on an image signal input from the outside. This control circuit uses the sync signal Tsync sent from the sync signal separation circuit (127).
Based on the above, Tscan, Tsft, and Tmry control signals are generated for each unit.

The sync signal separation circuit (127) is a circuit for separating a sync signal component and a luminance signal component from an NTSC system television signal input from the outside, and is a general frequency separation (filter) circuit or the like. Composed using. The sync signal separated by the sync signal separation circuit is composed of a vertical sync signal and a horizontal sync signal, but is illustrated here as a Tsync signal for convenience of description. The volatility signal component of the image separated from the television signal is represented as a DATA signal for convenience. This DATA signal is input to the shift register (125).

The shift register (125) is for serial / parallel conversion of the DATA signal serially input in time series for each line of the image, and is a control sent from the control circuit (124). It operates based on the signal Tsft (that is, the control signal Tsft can be said to be the shift clock of the shift register (125)).
Data of one line of the serial / parallel converted image (corresponding to drive data for n electron-emitting devices) is Id1.
~ Idn n parallel signals as the shift register (1
25).

The line memory (126) is a storage device for storing data for one line of an image only for a required time, and a control signal Tmr sent from the control circuit (124).
The contents of Id1 to Idn are written according to y. The stored contents are output as Id'1 to Id'n and input to the modulation signal generator (128).

The modulation signal generator (128) is a signal source for appropriately driving and modulating each of the surface conduction electron-emitting devices according to each of the image data Id'1 to Id'n, and its output signal. Is a display panel (12) through terminals Doy1 to Doyn.
It is applied to the surface conduction electron-emitting device in 2).

The electron-emitting device of the present invention has the following basic characteristics with respect to the emission current Ie. That is, the electron emission has a clear threshold voltage (Vth), and the electron emission occurs only when a voltage higher than Vth is applied. For a voltage equal to or higher than the electron emission threshold value, the emission current also changes according to the change in the voltage applied to the device. From this, when a pulse-like voltage is applied to the element, for example, when a voltage lower than the electron emission threshold is applied, electron emission does not occur, but when a voltage higher than the electron emission threshold is applied. Outputs an electron beam. At that time, the intensity of the output electron beam can be controlled by changing the peak value Vm of the pulse. Further, by changing the pulse width Pw, it is possible to control the total amount of charges of the output electron beam.

Therefore, as the method of modulating the electron-emitting device according to the input signal, the voltage modulation method, the pulse width modulation method or the like can be adopted. When carrying out the voltage modulation method, the modulation signal generator (128) generates a voltage pulse of a fixed length and appropriately modulates the peak value of the pulse according to the input data. Can be used.

When implementing the pulse width modulation method,
As the modulation signal generator (128), a pulse width modulation type circuit that generates a voltage pulse having a constant crest value and appropriately modulates the width of the voltage pulse according to input data can be used.

As the shift register (125) and the line memory (126), either a digital signal type or an analog signal type can be adopted. This is because serial / parallel conversion and storage of the image signal may be performed at a predetermined speed.

When the digital signal type is used, it is necessary to convert the output signal DATA of the sync signal separation circuit (127) into a digital signal. For this, an A / D converter is provided at the output section of the sync signal separation circuit. It should be provided. In this connection,
The circuit used for the modulation signal generator (128) is slightly different depending on whether the output signal of the line memory (126) is a digital signal or an analog signal. That is, in the case of the voltage modulation method using a digital signal, for example, a D / A conversion circuit is used for the modulation signal generator (128), and an amplification circuit or the like is added if necessary. In the case of the pulse width modulation method, the modulation signal generator (128) compares, for example, a high-speed oscillator and a counter (counter) that counts the number of waves output by the oscillator with the output value of the counter and the output value of the memory. A circuit that combines comparators is used. If necessary, an amplifier for voltage-amplifying the pulse-width-modulated modulation signal output from the comparator to the drive voltage of the surface conduction electron-emitting device can be added.

In the case of the voltage modulation method using an analog signal, the modulation signal generator (128) can adopt, for example, an amplifier circuit using an operational amplifier or the like, and a level shift circuit or the like can be added if necessary. . In the case of the pulse width modulation method, for example, a voltage controlled oscillator (VCO)
Can be adopted, and an amplifier for amplifying the voltage up to the driving voltage of the surface conduction electron-emitting device can be added if necessary.

In the image forming apparatus of the present invention which can be constructed as described above, each of the electron-emitting devices has a terminal D outside the container.
Electron emission occurs by applying a voltage through ox1 to Doxm and Doy1 to Doyn. A high voltage is applied to the metal back (116) or a transparent electrode (not shown) via the high voltage terminal Hv to accelerate the electron beam. The accelerated electrons collide with the fluorescent film (115) and emit light to form an image.

The configuration of the image forming apparatus described above is an example, and various modifications can be made based on the technical idea of the present invention. As for the input signal, the NTSC system is mentioned, but the input signal is not limited to this, and PALSECA
In addition to M system, TVs with more scanning lines than this
Signal (for example, high-quality T including MUSE method)
V) method can also be adopted.

Next, the ladder-type electron source substrate and the display panel will be described with reference to FIGS. 17 and 18, respectively.

FIG. 17 is a schematic view showing an example of a ladder-shaped arrangement type electron source substrate. In the figure, 129 is an electron source substrate, and 130 is a surface conduction electron-emitting device. 13
Dx1 to Dx10 of 1 are surface conduction electron-emitting devices (13
0) is a common wiring for connecting 0). A plurality of surface conduction electron-emitting devices (130) are arranged in parallel in the X direction on the substrate. A plurality of the element rows are arranged to form an electron source substrate. By applying a drive voltage between the common wires of each element row, each element row can be driven independently. That is, a voltage equal to or higher than the electron emission threshold value is applied to the element row where the electron beam is desired to be emitted, and a voltage equal to or lower than the electron emission threshold value is applied to the element row which does not emit the electron beam.
The common wirings Dx2 to Dx9 between the element rows are, for example, Dx2 and Dx3.
It is also possible to use the same wiring for and.

FIG. 18 is a perspective view showing an example of a display panel equipped with the ladder-shaped electron source substrate. 13
2 is a grid electrode, 133 is an opening for passing electrons,
Dox1 to Doxm are terminals outside the container. G1 to Gn are terminals outside the container connected to the grid electrode (132). FIG.
The display panel shown in FIG. 8 and the display panel including the electron source substrate of the simple matrix arrangement type shown in FIG. 14 are largely different from each other in the electron source substrate (129) and the face plate (11).
7) and whether or not a grid electrode (132) is provided.

The grid electrode (132) is for modulating the electron beam emitted from the surface conduction electron-emitting device, and is a striped electrode provided orthogonal to the ladder-shaped element rows. is there. Each grid electrode is provided with a circular opening (133) corresponding to each element in order to pass an electron beam.
The shape and installation position of the grid electrode are not limited to those shown in FIG. For example, a large number of through holes may be provided in the form of a mesh as openings, and the grid electrode may be provided around or near the surface conduction electron-emitting device.

The external terminals (Dox1 to Doxm) and the grid external terminals (G1 to Gn) are electrically connected to a control circuit (not shown).

In the image forming apparatus equipped with the display panel of this example, a modulation signal for one image line is simultaneously applied to the grid electrode columns in synchronization with the sequential driving (scanning) of the element rows one column at a time. . This makes it possible to control the irradiation of each electron beam onto the phosphor and display an image by 1 line.

The flat-panel image forming apparatus of the present invention described above is used as a display device for television broadcasting, a display device such as a video conference system, a computer, etc., and also as an optical printer constituted by using a photosensitive drum or the like. It can also be used as an image forming apparatus or the like.

[0128]

As is apparent from the above description, the present invention has the following effects. (1) It becomes possible to use a firing furnace close to the size of the envelope, and the temperature control of the furnace becomes very easy. Moreover, since a large furnace is not required in terms of equipment, it is possible to manufacture at low cost. (2) Since it is not necessary to step the rear plate to the exhaust hole, and ordinary drilling is sufficient, the manufacturing can be easily performed at low cost. (3) Since the shape of the connecting portion between the exhaust pipe and the envelope is smooth, the rigidity of the connecting portion is improved structurally and the damage to the connecting portion is reduced.

[Brief description of drawings]

FIG. 1 is a schematic cross-sectional view of a flat panel display panel of the present invention in which a connection ring is provided and before an exhaust pipe is connected.

FIG. 2 is a schematic cross-sectional view of a flat panel display panel of the present invention before a connection ring is provided.

FIG. 3 is a schematic cross-sectional view of a flat panel display panel of the present invention before fusion fixing, in which a connection ring is provided and an exhaust pipe is connected.

FIG. 4 is a schematic partial cross-sectional view of the flat panel display panel of the present invention after the exhaust pipe is fusion-fixed.

FIG. 5 is a schematic partial cross-sectional view of a flat panel display panel of the present invention before fusion fixing, in which a connection ring is provided and an exhaust pipe is connected.

FIG. 6 is a schematic partial cross-sectional view of the flat panel display panel of the present invention after the exhaust pipe is fusion-bonded and fixed.

FIG. 7 is a schematic partial cross-sectional view of a flat panel display panel of the present invention before fusion fixing, in which a connection ring is provided and an exhaust pipe is connected.

FIG. 8 is a schematic partial cross-sectional view of the flat panel display panel of the present invention after the exhaust pipe is fusion-bonded and fixed.

FIG. 9 is an explanatory diagram of a flat surface conduction electron-emitting device according to the present invention.

FIG. 10 is an explanatory diagram of a vertical surface conduction electron-emitting device according to the present invention.

FIG. 11 is an explanatory diagram of a method of manufacturing a surface conduction electron-emitting device according to the present invention.

FIG. 12 is an explanatory diagram of a voltage waveform in an energization forming process adopted when manufacturing the surface conduction electron-emitting device according to the present invention.

FIG. 13 is a schematic plan view of a matrix-arranged electron source substrate according to the present invention.

FIG. 14 is an explanatory diagram of a display panel of the flat panel image forming apparatus of the present invention.

FIG. 15 is an explanatory diagram (schematic diagram) of a fluorescent film used in the display panel of the flat panel image forming apparatus of the present invention.

FIG. 16 is an NTS in the flat panel image forming apparatus of the present invention.
FIG. 9 is an explanatory diagram (block diagram) of a drive circuit for performing display in accordance with a C system television signal.

FIG. 17 is a schematic plan view of a ladder-shaped electron source substrate of the present invention.

FIG. 18 is an explanatory diagram of a display panel of the flat panel image forming apparatus of the present invention.

FIG. 19 is an explanatory diagram of a conventional method for connecting an exhaust pipe of a display panel.

FIG. 20 is a schematic plan view of a conventional surface conduction electron-emitting device.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Face plate 2 Support frame 3 Rear plate 4, 6 Frit glass 5 Envelope 7 Exhaust hole 8, 11, 13 Connection ring 9 Exhaust pipe 10 Ring burner 12 Electric heating coil a, b, c Fusion part 101, 301 Substrate 102 , 103 device electrodes 104, 302 conductive thin films 105, 303 electron emission part 106 step forming part 107, 129 electron source substrate 108 X-direction wiring 109 Y-direction wiring 110, 130 surface conduction electron-emitting device 111 connection 112 rear plate 113 support Frame 114 Glass substrate 115 Fluorescent film 116 Metal back 117 Face plate 118 High voltage terminal 119 Enclosure 120 Black member 121 Fluorescent substance 122 Display panel 123 Scanning circuit 124 Control circuit 125 Shift register 126 Line memory 127 Synchronous signal separation circuit 28 the modulation signal generator Vx, Va dc voltage source 131 common wiring 132 grid electrodes 133 opening 201 envelope 202 exhaust pipe 203 tablets 204 exhaust holes 205 stepped portion

Claims (10)

[Claims] 1. A method of manufacturing a flat panel display panel having an envelope including at least a face plate and a rear plate and an exhaust pipe, wherein a connecting ring is used in a step of connecting the exhaust pipe and the envelope. A method of manufacturing a flat panel display panel characterized. 2. A method of manufacturing a flat panel display panel having an envelope including at least a face plate and a rear plate and an exhaust pipe, the step of connecting and fixing a connecting ring to the envelope, and the connecting ring. A method of manufacturing a flat-panel display panel, comprising a step of connecting an exhaust pipe, heating, and fixing by fusion. 3. The method for manufacturing a flat panel display panel according to claim 2, wherein heating and fusion fixing are performed by a burner. 4. A method of manufacturing a flat panel display panel according to claim 2, wherein the heating is performed by an electric heating coil to perform fusion fixing. 5. The flat plate according to claim 1, wherein when the connection ring and the exhaust pipe are connected, the fused portions of the connection ring are fitted so as to be located at least outside the exhaust pipe. For manufacturing a pattern display panel. 6. The flat plate according to claim 1, wherein when the connection ring and the exhaust pipe are connected, they are fitted so that the fusion-bonded portion of the connection ring is located at least inside the exhaust pipe. For manufacturing a pattern display panel. 7. The shape of the outer surface of the connecting ring is formed so that the connecting portion between the exhaust pipe and the envelope has a smooth shape after fusion fixing. A method for manufacturing a flat panel display panel according to. 8. The method of manufacturing a flat panel display panel according to claim 1, wherein the flat panel display panel is a flat panel display panel including a surface conduction electron-emitting device. 9. A flat panel display panel manufactured by the method according to claim 1. 10. A flat panel image forming apparatus comprising a flat panel display panel manufactured by the method according to claim 1. Description: