JPH09245619A - Manufacture of image forming device and device therefor - Google Patents

Abstract

PROBLEM TO BE SOLVED: To prevent generation of a deviation and contain high accuracy and mass production, by providing a through hole of a rear plate and a faceplate with simultaneous working respectively in the same position. SOLUTION: A rear plate 13 is formed by a glass member mounting an electron emitting element. A faceplate 11 is formed by a glass member mounting an image forming member forming an image by irradiation of an electron beam emitted from the electron emitting element of the rear plate 13. A display panel 16 is constituted to be sealed with a pin 14 consisting of material of aluminum, stainless steel, etc., having a coefficient of linear expansion larger than glass through a through hole 12 of the rear plate 13 and the faceplate 11. Here, the through hole 12 of the rear plate 13 and the faceplate 11 is provided respectively in the same position, by piling together glass before forming the image forming member and the electron emitting element simultaneously worked, deviation can be prevented. By making this through hole 12 serve as the positioning reference, high accurate position alignment and mass production can be attained.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an image forming apparatus such as a display device and a recording device to which an electron source is applied, and more particularly to a manufacturing apparatus and a manufacturing method of a thin image forming apparatus.

[0002]

2. Description of the Related Art Conventionally, there are known two types of electron-emitting devices, which are roughly classified into a thermoelectron-emitting device and a cold cathode electron-emitting device. Cold cathode electron-emission devices include field emission type (hereinafter referred to as FE type), metal / insulating layer / metal type (hereinafter referred to as MIM type), surface conduction electron-emitting devices, and the like.

[0003] As an example of the FE type, W. P. Dyke &
W. W. Doran "Field Emission",
Advance in Electron Physi
cs, 8, 89 (1956), or C.I. A. Spin
dt "PhysicalProperties of of
thin-film field emission
cathodes with mollybdenum
cones ". J. Appl. Phys. 47, 524.
8 (1976) and the like are known.

In the MIM type, C.I. A. Mead, "Op
eration of Tunnel-Emisio
n Devices ", J. Appl. Phys., 3
2, 646 (1961) and the like are known.

Examples of the surface conduction electron-emitting device type include:
M. I. Elinson, Radio Eng. Ele
ctron Phys. , 10, 1290 (1965)
Etc. have been disclosed.

In the surface conduction electron-emitting device, electrons are emitted by passing a current through a small area thin film formed on a substrate in parallel with the film surface. As the surface conduction electron-emitting device, a device using the SnO2 thin film by Erinson et al., A device using an Au thin film [G. Dittmer: Th
in Solid Films, 9, 317 (197)
2)], by In2 O3 / SnO2 thin film [M. H
artwell and C.I. G. FIG. Fonstad: IE
EE Trans. ED Conf. , 519 (197)
5)], using a carbon thin film [Hisashi Araki et al .: Vacuum,
26, No. 1, p. 22 (1983)].

As a typical example of these surface conduction electron-emitting devices, the above-mentioned M.P. Figure 1 shows the Hartwell device configuration .
9 schematically shows. In the figure, reference numeral 71 is a substrate. 7
Reference numeral 4 denotes a conductive thin film, which is composed of a metal oxide thin film or the like formed by sputtering in an H-shaped pattern, and the electron emitting portion 75 is formed by an energization process called energization forming described later. The element electrode spacing L in the figure is 0.5 to 1 mm,
W'is set to 0.1 mm.

Conventionally, in these surface conduction electron-emitting devices, it has been general that the electron-emitting portion 75 is formed in advance by conducting an energization process called energization forming on the conductive thin film 74 before the electron emission. That is, the energization forming means that a direct current voltage or a very gentle rising voltage is applied to both ends of the electroconductive thin film 74 to energize the electroconductive thin film 74 to locally destroy, deform or alter the electroconductive thin film. In the electron emitting portion 75, a crack is generated in a part of the conductive thin film 74, and electrons are emitted from the vicinity of the crack. In the surface conduction electron-emitting device that has been subjected to the energization forming process, a voltage is applied to the conductive thin film 74 and a current is passed through the device so that electrons are emitted from the electron-emitting portion 75.

Since the surface conduction electron-emitting device has a simple structure and is easy to manufacture, it has an advantage that a large number of devices can be arrayed over a large area. Therefore, applied research on charged beam sources, display devices, and the like, which make use of this feature, has been conducted. As an example in which a large number of surface-conduction type electron-emitting devices are formed in an array, as will be described later, surface-conduction type electron-emitting devices are arranged in parallel called a ladder-type arrangement, and both ends of each device are wired (also called common wiring). , An electron source in which a large number of connected lines are arranged (see, for example, JP-A-64).
-031332, JP-A-1-283749, 2-25
7552).

In particular, in image forming apparatuses such as display devices, in recent years, flat panel display devices using liquid crystal have become popular in place of CRTs, but since they are not self-luminous, they must have a backlight. There are problems, and it has been desired to develop a self-luminous display device.

As a self-luminous display device, an image forming device which is a display device in which a large number of surface conduction electron-emitting devices are arranged and a phosphor which emits visible light by electrons emitted from the electron source is combined is known. (For example,
USP 5,066,883).

In an image forming apparatus using such an electron emitting device, a rear plate on which an electron emitting portion is mounted, a face plate on which an image forming member is mounted, and both are hermetically sealed by a sealing material through a frame. What is worn is known.

In the manufacturing process at this time, the face plate, the frame and the rear plate are laminated, and the position of the electron-emitting device on the rear plate and the position of the image forming portion on the face plate are adjusted by using a positioning jig using a butting. They are combined and heated and baked to a temperature at which the previously applied sealing material melts.

[0014]

However, since the face plate, the rear plate, and the positioning jig are thermally expanded by the heating and firing process, the relative positions of the electron-emitting device on the rear plate and the image forming portion on the face plate. The relationship is shifted, and when the manufactured image forming apparatus is driven, the electron beam is displaced from the image forming section, which causes insufficient brightness of the image forming apparatus and uneven color.

The object of the present invention was made in view of the above problems, and in the positioning of the face plate and the rear plate of the conventional example, the electron emitting portion and the image forming member are positioned with high yield with high accuracy. An object is to provide a manufacturing apparatus and a manufacturing method of an image forming apparatus that can be matched.

[0016]

The above objects can be attained by the present invention described below. That is, the present invention provides a rear plate on which an electron-emitting device is mounted, and a face plate which is arranged to face the rear plate on which an image-forming member on which an image is formed by irradiation of an electron beam emitted from the electron-emitting device is mounted. A method for manufacturing an image forming apparatus in which these are hermetically sealed with a sealing material, wherein (1) the face plate and the rear plate have at least two or more holes, and (2) the holes at room temperature. (3) Baking is performed, and (4) When the sealing firing temperature of the sealing material is reached, (5) The face plate and the rear plate are positioned by the difference in thermal expansion of the materials. Disclosed is a method of manufacturing an image forming apparatus, which is completed and is manufactured by removing the pin from the hole at room temperature.

When the sealing temperature is reached, the pin diameter is smaller than the hole diameter so that the positioning accuracy is within the desired level. Further, the hole is formed at the same position of the face plate and the rear plate, and the electron-emitting device and the image forming member are positioned by using the hole position as a reference.

Further, according to the present invention, the rear plate on which the electron-emitting device is mounted and the rear plate on which the image forming member on which an image is formed by irradiation of the electron beam emitted from the electron-emitting device is mounted are opposed to each other. A face plate and an apparatus for manufacturing an image forming apparatus that hermetically seals these with a sealing material, comprising: (1) the face plate and the rear plate;
Alternatively, a fixing jig capable of fixing the face plate and the rear plate, respectively, has (2) at least two or more holes, and (3) inserts pins into the holes at room temperature,
(4) When baking is performed, (5) When the sealing baking temperature of the sealing material is reached, (6) The positioning of the face plate and the rear plate is completed due to the difference in thermal expansion of the materials, and the temperature is kept at room temperature. Also disclosed is an apparatus for manufacturing an image forming apparatus, which has a configuration of manufacturing by removing the pin from the hole.

When the sealing temperature is reached, the pin diameter is smaller than the hole diameter so that the positioning accuracy is within the desired positioning accuracy. Further, the hole is formed at the same position of the face plate and the rear plate, and the electron-emitting device and the image forming member are positioned by using the hole position as a reference. Is.

In addition, the linear expansion coefficient of the pin is made larger than the linear expansion coefficient of the hole, and further,
The present invention is characterized in that a surface conduction electron-emitting device is used as the electron-emitting device.

[0021]

BEST MODE FOR CARRYING OUT THE INVENTION Next, a positioning method implemented by the present invention will be described with reference to FIGS. 1, 2 and 3. First, each figure will be described.

In FIG. 1, reference numeral 11 denotes a face plate made of a glass material on which an image forming member on which an image is formed by irradiation of an electron beam emitted from an electron emitting element is mounted.
Reference numeral 13 is a rear plate formed of a glass material on which an electron-emitting device is mounted, 12 is a through hole for inserting a pin formed in an area outside the image of the face plate 11 and the rear plate 13, and 14 is a glass material having a linear expansion coefficient. A pin made of a material such as aluminum, stainless steel, etc.
16 is a display panel.

Face plate 11 and rear plate 13
The through holes 12 of No. 2 were provided at the same positions. If the glass is overlapped and processed at the same time before forming the image forming member and the electron-emitting device, no deviation occurs. An image forming member and an electron-emitting device are formed on the face plate 11 and the rear plate 13 by using the hole 12 as a reference for positioning. That is, if the holes are positioned, the respective positions of the electron-emitting device with respect to the image forming member will match.

FIG. 2 is an exploded view of FIG. 1, in which a frame 1 is provided between the face plate 11 and the rear plate 13.
5 3 is a cross-sectional view taken along the line AA of FIG. 1, and in each of FIGS. 3 (a) to 3 (c),
(A) shows the state at room temperature, (b) shows the state at the sealing and firing temperature, and (c) shows the state when the temperature is returned to room temperature again. In the figure, D1 is the inner diameter of the hole, D2 is the outer diameter of the pin, ΔX is the deviation at the time of normal temperature setting, 31 is the sealing of frit glass (low melting glass) that connects the frame 15 to the face plate 11 and the rear plate 13. It is a material.

As shown in FIG. 1, a flange portion having an outer diameter larger than the outer diameter of the pin is provided at one end of the pin 14. This flange is designed to stop at a fixed position when a member is inserted into the pin, and there is no limitation on the size or shape of the outer diameter.

The relationship between the hole inner diameter D1 and the pin outer diameter D2 is that the pin 14 is smaller than the hole 12 at room temperature. The inner diameter and the outer diameter are calculated using the sealing temperature, the linear expansion coefficient peculiar to the material, and the allowable positional deviation amount as parameters, and when the temperature rises and reaches the desired temperature, D1 and D2 expand. In this state, the hole and pin diameters are machined so that the clearance falls within the range of the allowable positional deviation. A method for performing positioning using the manufacturing apparatus having the above relationship will be described below.

First, at room temperature setting, the rear plate 13 is inserted into the pin 14 having the flange and abutted against the end of the flange, the support frame 15 shown in FIG. 2 is placed at a predetermined position, and finally the face plate 11 is attached to the pin 14. insert. This state corresponds to (a) of FIG. 3, and since there is a diameter difference between the hole and the pin, a deviation of ΔX occurs in most cases. In this state, the sealing material 31 is put into a heating device such as an electric furnace and the temperature is raised to a temperature at which the sealing material 31 is melted. When the sealing temperature is reached, the shift amount ΔX becomes the value of the allowable position shift amount, and the position of each electron-emitting device on the rear plate 13 corresponding to the image forming member on the face plate 11 shifts. It enters into the quantity and is positioned (corresponding to FIG. 3 (b)). After this, the temperature is gradually cooled.

As a result, the face plate 11 and the support frame 15 and the rear plate 13 and the support frame 15 are attached to the sealing material 3.
The airtight container fixed at 1 and functioning as a display panel is completed after desired positioning (corresponding to FIG. 3C).

Finally, the display panel 16 is removed from the pin 14. The gap between the pin 14 and the hole 12 at the time of removal is the gap at room temperature before sealing. As a result, the pin 14 is inserted into the hole 12
It can be easily removed from.

As the material used for the pin, it is easier to set and remove the jig by using a material having a coefficient of linear expansion sufficiently larger than that of the material used for the hole.
It is preferable to use a metallic material.

In this embodiment, the holes are machined and formed in the face plate and the rear plate, but the holes may be machined and formed in a jig that can fix the face plate and the rear plate, for example. In this case, it is necessary to fix the face plate and the rear plate based on the holes formed in the jig. Further, although the holes shown in the present embodiment are installed at two places, the holes are not limited to these and may be selected appropriately.

Next, the surface conduction electron-emitting device used in the present invention will be described. The basic structure of the surface conduction electron-emitting device of the present invention is roughly classified into two types: a plane type and a vertical type. First, the flat surface conduction electron-emitting device will be described.

9A and 9B are schematic views showing the structure of the flat surface conduction electron-emitting device of the present invention, FIG. 9A being a plan view and FIG. 9B being a sectional view. In FIG. 9, reference numeral 71 is a substrate, 72 and 73 are device electrodes, 74 is a conductive thin film, and 75 is an electron emitting portion.

As the substrate 71, quartz glass, glass having a reduced content of impurities such as Na, soda lime glass, a glass substrate on which SiO2 is deposited by a sputtering method, a ceramic substrate such as alumina, or the like can be used.

As the material of the device electrodes 72 and 73 facing each other, a general conductive material can be used.
metals or alloys such as r, Au, Mo, W, Pt, Ti, Al, Cu, Pd, and Pd, As, Ag, Au, Ru
It can be selected from a printed conductor composed of a metal or metal oxide such as O2 and Pd-Ag and glass, a transparent conductor such as In2 O3 -SnO2 and a semiconductor conductor material such as polysilicon. The element electrode spacing L, the element electrode length W, the shape of the conductive thin film 74, and the like are designed in consideration of the applied form and the like. The device electrode interval L is preferably in the range of several thousand angstroms to several hundreds of μm, more preferably 1 to 10 in consideration of the voltage applied between the device electrodes.
The range is 0 μm.

The device electrode length W is in the range of several μm to several hundred μm in consideration of the resistance value of the electrode and the electron emission characteristics.
The film thickness d of the device electrodes 72 and 73 is in the range of 100 Å to 1 μm.

In addition to the structure shown in FIG.
A configuration in which a conductive thin film 74 and opposing element electrodes 72 and 73 are stacked in this order may be adopted. Conductive thin film 74
In order to obtain good electron emission characteristics, it is preferable to use a fine particle film composed of fine particles. The film thickness depends on the step coverage of the device electrodes 72, 73 and the device electrode 7
It is appropriately set in consideration of the resistance value between 2 and 73 and the forming conditions described later, but it is usually preferably in the range of several angstroms to several thousand angstroms, more preferably in the range of 10 to 500 angstroms. Is good. The resistance value of Rs is 10 ² to 10
The value is ⁷ Ω.

Rs has a thickness t, a width w, and a length l.
Is the value that appears when the resistance R of the thin film is set to R = Rs (l / w), and when the resistivity of the thin film material is ρ, Rs = ρ
/ T. In the specification of the present application, the forming process will be described by taking an energization process as an example, but the forming process is not limited to this, and any method can be used as long as it is a method of forming a crack in a film to form a high resistance state. Good.

The material forming the conductive thin film 74 is Pd,
Pt, Ru, Ag, Au, Ti, In, Cu, Cr, F
metals such as e, Zn, Sn, Ta, W, Pb, PdO, S
oxides such as nO2, In2 O3, PbO, Sb2 O3,
HfB2, ZrB2, LaB6, CeB6, YB4, G
Borides such as dB4, TiC, ZrC, HfC, TaC,
It is appropriately selected from carbides such as SiC and WC, nitrides such as TiN, ZrN, and HfN, semiconductors such as Si and Ge, and carbon.

The fine particle film described here is a film in which a plurality of fine particles are aggregated, and its fine structure has a state in which fine particles are individually dispersed and arranged, or a state in which fine particles are adjacent to each other or overlap each other (some fine particles are (Including the case where they are aggregated to form an island structure as a whole).
The particle size of the fine particles is in the range of several angstroms to 1 μm, preferably in the range of 10 to 200 angstroms.

The electron-emitting portion 75 is composed of a crack having a high resistance formed in a part of the conductive thin film 74, and depends on the film thickness, film quality, material of the conductive thin film 74, and a method such as energization forming described later. It will be what you did. In some cases, the inside of the electron emitting portion 75 contains conductive fine particles having a particle size of 1000 Å or less. The conductive fine particles contain some or all of the elements of the material constituting the conductive thin film 74. The electron emitting portion 75 and the conductive thin film 74 in the vicinity thereof may include carbon or a carbon compound.

Next, the vertical surface conduction electron-emitting device will be described. FIG. 10 is a schematic view showing an example of the vertical surface conduction electron-emitting device of the present invention. 10, the same parts as those shown in FIG. 9 are designated by the same reference numerals as those shown in FIG. 81 is a step forming part. Substrate 71, device electrodes 72 and 73, conductive thin film 7
4. The electron emitting portion 75 can be made of the same material as in the case of the flat surface conduction electron emitting device described above.

The step forming portion 81 is formed by a vacuum evaporation method, a printing method,
It can be made of an insulating material such as SiO2 formed by a sputtering method or the like. The film thickness of the step forming portion 81 corresponds to the device electrode distance L of the planar surface conduction electron-emitting device described above, and can be set in the range of several thousand angstroms to several tens of μm. This film thickness is set in consideration of the manufacturing method of the step forming portion and the voltage applied between the element electrodes, but is preferably in the range of several hundred angstroms to several μm.

The conductive thin film 74 is used for the device electrodes 72 and 7
After the step 3 and the step forming portion 81 are formed, they are laminated on the device electrodes 72 and 73. Although the electron emitting section 75 is formed in the step forming section 81 in FIG. 10, the shape and position are not limited to this, depending on the forming conditions, forming conditions, and the like.

There are various methods for manufacturing the above-mentioned surface conduction electron-emitting device, and one example thereof is schematically shown in FIG. Hereinafter, an example of the manufacturing method will be described with reference to FIGS. 9 and 11. Also in FIG. 11, FIG.
Are given the same reference numerals as those shown in FIG.

1) The substrate 71 is thoroughly washed with a detergent, pure water, an organic solvent, etc., and after the element electrode material is deposited by the vacuum deposition method, the sputtering method, etc., the substrate 71 is deposited by, for example, the photolithography technique. Device electrodes 72, 73 on top
Are formed (see FIG. 11A).

2) Substrate 7 provided with device electrodes 72 and 73
1 is coated with an organometallic solution to form an organometallic thin film. As the organometallic solution, a solution of an organometallic compound containing the metal of the material of the conductive thin film 74 as a main element can be used. The organic metal thin film is heated and baked, and is patterned by lift-off, etching, or the like.
4 is formed (see FIG. 11B).

Although the coating method of the organic metal solution has been described here, the method of forming the conductive thin film 74 is not limited to this, and the vacuum deposition method, the sputtering method, the chemical vapor deposition method, the dispersion method are used. A coating method, a dipping method, a spinner method, etc. can also be used.

3) Subsequently, a forming process is performed.
As an example of the forming processing method, a method by an energization processing will be described. When electricity is applied between the element electrodes 72 and 73 using a power source (not shown),
An electron emitting portion 75 having a changed structure is formed (FIG. 11).
(C)).

According to the energization forming, the conductive thin film 74 is formed.
A site with a structural change such as local destruction, deformation or alteration is formed in the. This portion becomes the electron emitting portion 75. FIG. 12 shows an example of the voltage waveform of the energization forming. The voltage waveform is preferably a pulse waveform. For this purpose, the method shown in FIG. 12 (a) in which a pulse having a constant pulse peak value is continuously applied and the method shown in FIG. 12 (b) in which a voltage pulse is applied while increasing the pulse peak value are used. is there.

In FIG. 12A, T1 and T2 are the pulse width and pulse interval of the voltage waveform. Normally T1 is 1μ
s to 10 ms and T2 are set in the range of 10 μs to 100 ms. The peak value of the triangular wave (peak voltage at the time of energization forming) is appropriately selected according to the form of the surface conduction electron-emitting device. Under such conditions, for example, a voltage is applied for several seconds to several tens minutes. The pulse waveform is not limited to the triangular wave, and a desired waveform such as a rectangular wave can be adopted.

T1 and T2 in FIG.
This can be the same as that shown in FIG. The peak value of the triangular wave (peak voltage during energization forming) is
For example, it can be increased in steps of 0.1 V.

The end of the energization forming process can be detected by applying a voltage that does not locally destroy or deform the conductive thin film 74 during the pulse interval T2 and measure the current. For example, the element current flowing by applying a voltage of about 0.1 V is measured, the resistance value is obtained, and when the resistance is 1 MΩ or more, the energization forming is terminated.

4) It is preferable to carry out an activation treatment on the element which has finished forming. By performing the activation process, the device current If and the emission current Ie are significantly changed.
The activation treatment can be performed, for example, in an atmosphere containing a gas of an organic substance, by repeating application of a pulse as in the energization forming.

This atmosphere can be formed by utilizing the organic gas remaining in the atmosphere when the inside of the vacuum container is evacuated by using, for example, an oil diffusion pump, a rotary pump, etc. It can also be obtained by introducing a gas of an appropriate organic substance into the vacuum evacuated. The preferable gas pressure of the organic substance at this time is different depending on the form of application, the shape of the vacuum container, the type of the organic substance, and the like, and is appropriately set depending on the case.

Examples of suitable organic substances are alkanes,
Alkenes, alkyne aliphatic hydrocarbons, aromatic hydrocarbons, alcohols, aldehydes, ketones, amines, phenols, carboxylic acids, organic acids such as sulfonic acids, and the like, and specifically, , Methane, ethane,
Saturated hydrocarbon represented by Cn H2n + 2 such as propane, unsaturated hydrocarbon represented by composition formula such as Cn H2n such as ethylene and propylene, benzene, toluene, methanol, ethanol, formaldehyde, acetaldehyde, acetone,
Methyl ethyl ketone, methyl amine, ethyl amine, phenol, formic acid, acetic acid, propionic acid, etc. can be used.

By this treatment, carbon or a carbon compound is deposited on the device from the organic substance existing in the atmosphere, and the device current If and the emission current Ie change remarkably. The end of the activation process is determined while measuring the device current If and the emission current Ie. The pulse width, pulse interval, pulse crest value, etc. are set as appropriate.

As an example of carbon or a carbon compound, HO
PG (Highly Oriented Pyroly)
tic Graphite), PG (Pyrolyti)
cGraphite), GC (Glassy Carb)
on) and the like (however, HOPG is a graphite having an almost perfect crystal structure, PG is a graphite having a crystal grain of about 200 angstroms and the crystal structure is somewhat disordered, and GC is a crystal structure having a crystal grain of about 20 angstroms. Represents a larger disturbance),
Amorphous carbon (amorphous carbon and carbon containing a mixture of amorphous carbon and fine crystals of graphite), and its film thickness is preferably 500 angstroms or less, and more preferably 300 angstroms or less.

5) It is preferable that the electron-emitting device obtained through the activation process is subjected to a stabilization treatment. This treatment is preferably carried out at a partial pressure of the organic substance in the vacuum container of 1 × 10 ⁻⁸ torr or less, preferably 1 × 10 ⁻¹⁰ torr or less. The pressure in the vacuum container is 10 ^-6.5 to 10 ^-7 torr
Is preferable, and 1 × 10 ⁻⁸ torr or less is particularly preferable.

The vacuum evacuation device for evacuating the vacuum container preferably uses no oil so that the oil generated from the device does not affect the characteristics of the element. Specifically, a vacuum evacuation device such as a sorption pump or an ion pump can be used. Further, when evacuating the inside of the vacuum vessel, it is preferable to heat the entire vacuum vessel to facilitate evacuating the organic substance molecules adsorbed on the inner wall of the vacuum vessel and the electron-emitting device.

The vacuum evacuation condition in the heated state at this time is preferably 80 to 200 ° C. for 5 hours or more, but is not particularly limited to this condition, and the size and shape of the vacuum container,
It changes depending on various conditions such as the structure of the electron-emitting device. In addition, the partial pressure of the organic substance is measured by a mass spectrometer with a mass number of 1
It is determined by measuring the partial pressure of 0 to 200 organic molecules containing carbon and hydrogen as main components, and integrating these partial pressures.

It is preferable to maintain the atmosphere at the time of driving after the stabilization process is the atmosphere at the end of the stabilization process, but the present invention is not limited to this, and if the organic substance is sufficiently removed, Even if the degree of vacuum itself is slightly lowered, it is possible to maintain sufficiently stable characteristics. By adopting such a vacuum atmosphere, the deposition of new carbon or carbon compound can be suppressed, and as a result, the device current If and the emission current Ie can be suppressed.
Becomes stable.

Various arrangements of electron-emitting devices can be adopted. As an example, a large number of electron-emitting devices arranged in parallel are connected at both ends, and a large number of rows of electron-emitting devices are arranged (referred to as a row direction), and in a direction orthogonal to this wiring (referred to as a column direction). There is a ladder-like arrangement in which electrons from the electron-emitting device are controlled and driven by a control electrode (also called a grid) arranged above the electron-emitting device. Separately, a plurality of electron-emitting devices are arranged in a matrix in the X and Y directions, and one of electrodes of the plurality of electron-emitting devices arranged in the same row is commonly connected to a wiring in the X direction. For example, the other of the electrodes of the plurality of electron-emitting devices arranged in the same column is commonly connected to the wiring in the Y direction. This is a so-called simple matrix arrangement. First, the simple matrix arrangement will be described in detail below.

An electron source substrate obtained by arranging a plurality of electron-emitting devices of the present invention in a matrix will be described with reference to FIG. In FIG. 13, 1101 is an electron source substrate,
1102 is an X-direction wiring, 1103 is a Y-direction wiring.
Reference numeral 1104 denotes a surface conduction electron-emitting device, and reference numeral 1105 denotes a connection. The surface conduction electron-emitting device 1104 may be either the above-mentioned plane type or vertical type.

The m X-direction wirings 1102 are Dx1, D
x2 to Dxm, and can be made of a conductive metal or the like formed by a vacuum deposition method, a printing method, a sputtering method, or the like. The material, thickness, and width of the wiring are appropriately designed.

The Y-direction wiring 1103 includes Dy1, Dy2,
ＹDyn are formed in the same manner as the X-direction wiring 1102. An interlayer insulating layer (not shown) is provided between the m X-direction wirings 1102 and the n Y-direction wirings 1103 to electrically isolate the two (m and n are both positive). Integer).

The interlayer insulating layer (not shown) is composed of SiO2 or the like formed by using the vacuum deposition method, the printing method, the sputtering method or the like. For example, the substrate 1 on which the X-direction wiring 1102 is formed
The film 101 is formed in a desired shape on the entire surface or a part of the film 101, and a film thickness, a material, and a manufacturing method are set so as to withstand a potential difference at an intersection of the X-direction wiring 1102 and the Y-direction wiring 1103.

X-direction wiring 1102 and Y-direction wiring 1103
Are respectively drawn out as external terminals. A pair of electrodes (not shown) constituting the surface conduction electron-emitting device 1104
Are m X-direction wires 1102 and n Y-direction wires 1
103 are electrically connected to each other by a connection 1105 made of a conductive metal or the like.

The material forming the wires 1102 and 1103, the material forming the wire connection 1105, and the material forming the pair of element electrodes may be the same or different in some or all of the constituent elements. Good. These materials are appropriately selected, for example, from the above-described materials for the device electrodes. When the material forming the element electrode is the same as the wiring material, the wiring connected to the element electrode can also be called an element electrode.

A scanning signal applying means (not shown) for applying a scanning signal for selecting a row of the surface conduction electron-emitting devices 1104 arranged in the X direction is connected to the X-direction wiring 1102. On the other hand, each row of the surface conduction electron-emitting devices 1104 arranged in the Y direction is arranged on the Y-direction wiring 1103 in accordance with an input signal.
A modulation signal generating means (not shown) for performing modulation is connected. The driving voltage applied to each electron-emitting device is supplied as a difference voltage between the scanning signal and the modulation signal applied to the device.

In the above configuration, individual elements can be selected and driven independently using simple matrix wiring. An image forming apparatus configured by using an electron source having such a simple matrix arrangement will be described with reference to FIGS. 14, 15 and 16. FIG. 14 is a schematic view showing an example of the display panel of the image forming apparatus.
FIG. 15 is a schematic view of a fluorescent film used in the image forming apparatus of FIG. FIG. 16 is a block diagram showing an example of a drive circuit for performing display according to an NTSC television signal.

In FIG. 14, 1101 is an electron source substrate on which a plurality of electron-emitting devices are arranged, and 1201 is an electron source substrate 1101.
A rear plate 1206 fixed to the glass substrate 120
3 is a face plate in which a fluorescent film 1204, a metal back 1205 and the like are formed on the inner surface of 3. A support frame 1202 is provided on the support frame 1202.
1. The face plate 1206 is connected using frit glass or the like. Reference numeral 1208 denotes an envelope, for example, in the air or in nitrogen at a temperature of 400 to 500 ° C.
It is baked for 0 minutes or more and sealed.

Reference numeral 1104 corresponds to the electron emitting portion in FIG. Reference numerals 1102 and 1103 denote X-direction wiring and Y-direction wiring connected to a pair of device electrodes of the surface conduction electron-emitting device.

The envelope 1208 includes the face plate 1206, the support frame 1202, and the rear plate 12 as described above.
It is composed of 01. Since the rear plate 1201 is provided mainly for the purpose of reinforcing the strength of the electron source substrate 1101,
If the electron source substrate 1101 itself has sufficient strength, the separate rear plate 1201 can be dispensed with. That is, the support frame 1202 is directly sealed to the substrate 1101,
The envelope 1208 may be constituted by the face plate 1206, the support frame 1202, and the substrate 1101. On the other hand, between the face plate 1206 and the rear plate 1201,
It is also possible to configure the envelope 1208 having sufficient strength against atmospheric pressure by installing a support body (not shown) called a spacer (atmospheric pressure resistant support member).

FIG. 15 is a schematic diagram showing a fluorescent film. The fluorescent film 1204 can be composed of only a phosphor in the case of monochrome. In the case of a color fluorescent film, it can be composed of a black member 1301 called a black stripe or a black matrix and a fluorescent material 1302 depending on the arrangement of the fluorescent materials.

The purpose of providing the black stripes and the black matrix is to make the mixed colors and the like inconspicuous by blackening the coating portions between the phosphors 1302 of the three primary color phosphors, which are necessary for color display, and to reflect external light. This is to suppress a decrease in contrast due to. As the material of the black stripe, in addition to the commonly used material containing graphite as a main component, any material that transmits and reflects light little can be used.

As a method for applying the phosphor to the glass substrate 1203, a precipitation method, a printing method or the like can be adopted regardless of monochrome or color. Usually, a metal back 1205 is provided on the inner surface side of the fluorescent film 1204. The purpose of providing the metal back is to improve the brightness by mirror-reflecting the light toward the inner surface side of the light emission of the phosphor toward the face plate 1206 side, to function as an electrode for applying an electron beam acceleration voltage, The purpose is to protect the phosphor from damage due to collision of negative ions generated in the envelope. The metal back can be manufactured by performing a smoothing process (usually called filming) on the inner surface of the fluorescent film after manufacturing the fluorescent film, and then depositing Al using vacuum evaporation or the like.

A transparent electrode (not shown) may be provided on the face plate 1206 on the outer surface side (the glass substrate 1203 side) of the fluorescent film 1204 in order to further enhance the conductivity of the fluorescent film 1204.

When performing the above-mentioned sealing, in the case of color, it is necessary to associate each color phosphor with the electron-emitting device.
Sufficient alignment is essential. The image forming apparatus shown in FIG. 14 is manufactured, for example, as follows.

The envelope 1208 is exhausted through an exhaust pipe (not shown) with an oil-free exhaust device such as an ion pump or a sorption pump while appropriately heating, as in the stabilization process described above, and 1 × 10 1 is exhausted. After sealing in an atmosphere with a vacuum degree of about ^-7 torr and a sufficiently small amount of organic substances, sealing is performed.

A getter process may be performed in order to maintain the degree of vacuum after the envelope 1208 is sealed. This is immediately before or after sealing the envelope 1208,
This is a process of heating a getter disposed at a predetermined position (not shown) in the envelope 1208 by heating using resistance heating, high-frequency heating, or the like to form a deposition film. The getter usually contains Ba or the like as a main component, and maintains a vacuum degree of, for example, 1 × 10 ⁻⁵ to 1 × 10 ⁻⁷ torr due to the adsorption action of the vapor deposition film.

Next, a configuration example of a drive circuit for performing television display based on an NTSC system television signal on a display panel constructed by using an electron source having a simple matrix arrangement will be described with reference to FIG. . In FIG. 16, reference numeral 1401 denotes an image display panel, 1402 denotes a scanning circuit, 1403 denotes a control circuit, and 1404 denotes a shift register. 1405 is a line memory, 1406 is a synchronizing signal separation circuit, 1407 is a modulation signal generator, and Vx and Va are DC voltage sources.

The display panel 1401 has terminals Dox1 to Dx.
oxm, terminals Doy1 to Doyn, and high-voltage terminal Hv
Connected to an external electric circuit via Terminal Dox1
Doxm is a scan for sequentially driving an electron source provided in the display panel, that is, a group of surface conduction electron-emitting devices that are matrix-wired in a matrix of m rows and n columns row by row (n elements). A signal is applied.

A modulation signal for controlling the output electron beam of each element of the surface conduction electron-emitting devices of one row selected by the scanning signal is applied to the terminals Doy1 to Doyn. The high-voltage terminal Hv is supplied with a direct-current voltage of, for example, 10 KV from the direct-current voltage source Va, which imparts sufficient energy to excite the phosphor to the electron beam emitted from the surface conduction electron-emitting device. This is the acceleration voltage for

The scanning circuit 1402 will be described. The circuit is provided with m switching elements inside (schematically shown by S1 to Sm in the figure). Each switching element has an output voltage of the DC voltage source Vx or O
One of V (ground level) is selected and electrically connected to the terminals Dox1 to Doxm of the display panel 1401. Each of the switching elements S1 to Sm includes a control circuit 1
It operates based on the control signal Tscan output by the switch 403, and can be configured by combining switching elements such as FETs, for example.

In the case of the present example, the DC voltage source Vx is an electron emission threshold value which is a drive voltage applied to an element which is not scanned based on the characteristics of the surface conduction electron-emitting element (electron emission threshold voltage). It is set to output a constant voltage that is less than or equal to the voltage.

The control circuit 1403 has a function of matching the operation of each unit so that an appropriate display is performed based on an image signal input from the outside. The control circuit 1403
The synchronization signal Tsy sent from the synchronization signal separation circuit 1406
Tscan and Tsf for each part based on nc
Generate t and Tmry control signals.

The sync signal separation circuit 1406 is a circuit for separating the sync signal component and the luminance signal component from the NTSC system television signal input from the outside, and uses a general frequency separation (filter) circuit or the like. Can be configured. The sync signal separated by the sync signal separation circuit 1406 is composed of a vertical sync signal and a horizontal sync signal, but it is shown here as a Tsync signal for convenience of description. The luminance signal component of the image separated from the television signal is referred to as a DATA signal for convenience. The DATA signal is transferred to the shift register 1404.
Is input to

The shift register 1404 is for serially / parallel-converting the DATA signals serially input in time series for each line of the image, and is based on the control signal Tsft sent from the control circuit 1403. The control signal Tsft can be said to be the shift clock of the shift register 1404. The serial / parallel converted image data for one line (in charge of driving data for n electron-emitting devices) is output from the shift register 1404 as n parallel signals Id1 to Idn.

The line memory 1405 is a storage device for storing data for one line of an image for a required time, and a control signal Tmry sent from the control circuit 1403.
, The contents of the conveniences Id1 to Idn are recorded. The recorded contents are output as I′d1 to I′dn and input to the modulation signal generator 1407.

The modulation signal generator 1407 is a signal source for appropriately driving-modulating each of the surface conduction electron-emitting devices according to each of the image data I′dl to I′dn,
The output signal is applied to the surface conduction electron-emitting device in the display panel 1401 through the terminals Doy1 to Doyn.

The electron-emitting device of the present invention has the following basic characteristics with respect to the emission current Ie. That is, the electron emission has a clear threshold voltage Vth, and the electron emission occurs only when a voltage higher than Vth is applied. For a voltage equal to or higher than the electron emission threshold value, the emission current also changes according to the change in the voltage applied to the device. From this, when a pulse-like voltage is applied to the element, for example, when a voltage lower than the electron emission threshold is applied, electron emission does not occur, but when a voltage higher than the electron emission threshold is applied. Outputs an electron beam.

At this time, the intensity of the output electron beam can be controlled by changing the pulse peak value Vm. In addition, it is possible to control the total amount of charges of the output electron beam by changing the pulse width Pw.

Therefore, as the method of modulating the electron-emitting device according to the input signal, the voltage modulation method, the pulse width modulation method or the like can be adopted. When performing the voltage modulation method, a circuit of the voltage modulation method that generates a voltage pulse of a fixed length and modulates the peak value of the pulse appropriately according to input data is used as the modulation signal generator 1407. be able to.

When implementing the pulse width modulation method,
As the modulation signal generator 1407, a pulse width modulation circuit that generates a voltage pulse having a constant peak value and appropriately modulates the width of the voltage pulse according to input data can be used. As the shift register 1404 and the line memory 1405, either a digital signal type or an analog signal type can be employed. This is because the serial / parallel conversion and storage of the image signal may be performed at a predetermined speed.

When the digital signal type is used, it is necessary to convert the output signal DATA of the sync signal separation circuit 1406 into a digital signal.
A D converter may be provided. In this connection, the circuit used for the modulation signal generator 1407 is slightly different depending on whether the output signal of the line memory 1405 is a digital signal or an analog signal. That is, in the case of the voltage modulation method using a digital signal, for example, a D / A conversion circuit is used as the modulation signal generator 1407, and an amplification circuit and the like are added as necessary.

In the case of the pulse width modulation method, the modulation signal generator 1407 compares, for example, a high-speed oscillator and a counter (counter) for counting the number of waves output by the oscillator with the output value of the counter with the output value of the memory. A circuit in which a comparator (comparator) is combined is used. If necessary,
It is also possible to add an amplifier for voltage-amplifying the pulse-width-modulated modulation signal output from the comparator to the drive voltage of the surface conduction electron-emitting device.

In the case of the voltage modulation method using an analog signal, the modulation signal generator 1407 can adopt, for example, an amplifier circuit using an operational amplifier or the like, and a level shift circuit or the like can be added if necessary. In the case of the pulse width modulation method, for example, a voltage controlled oscillation circuit (VCO) can be adopted, and an amplifier for voltage amplification up to the drive voltage of the surface conduction electron-emitting device can be added if necessary.

In the image display device of the present invention having such a structure, each electron-emitting device has a terminal Do outside the container.
Electrons are emitted by applying a voltage via x1 to Doxm and Doy1 to Doyn. Metal back 1205 or transparent electrode (not shown) via high voltage terminal Hv
To apply a high voltage to accelerate the electron beam. The accelerated electrons collide with the fluorescent film 1204 and emit light to form an image.

The configuration of the image forming apparatus described here is an example, and various modifications can be made based on the technical idea of the present invention. As for the input signal, the NTSC system is mentioned, but the input signal is not limited to this, and PAL, SEC
In addition to AM system, TVs with more scanning lines than this
Signal (for example, high-quality T including MUSE method)
V) system can also be adopted.

Next, a ladder type electron source and an image forming apparatus will be described with reference to FIGS. FIG. 17 is a schematic diagram illustrating an example of an electron source having a ladder-type arrangement.

In FIG. 17, reference numeral 1501 denotes an electron source substrate,
Reference numeral 1502 denotes an electron-emitting device. 1503, Dx1-D
x10 is a common wiring for connecting the electron-emitting devices 1502. A plurality of electron-emitting devices 1502 are arranged on the substrate 1501 in parallel in the X direction (this is called an element row).

A plurality of the element rows are arranged to form an electron source. By applying a drive voltage between the common wires of each element row, each element row can be driven independently.
That is, a voltage equal to or higher than the electron emission threshold value is applied to the element row where the electron beam is desired to be emitted, and a voltage equal to or lower than the electron emission threshold value is applied to the element row which does not emit the electron beam. For the common wirings Dx2 to Dx9 between the element rows, for example, Dx2 and Dx3 may be the same wiring.

FIG. 18 is a schematic view showing an example of a panel structure in an image forming apparatus provided with a ladder-type electron source. 1601 is a grid electrode, 1602 is an opening through which electrons pass, 1603 is Dox1, Dox2, to Do
It is a terminal outside the container made of xm. Reference numeral 1604 denotes an outer terminal of the container formed of G1, G2, to Gn connected to the grid electrode 1601, and 1501 is an electron source substrate in which the common wiring between each element row is the same wiring. In FIG. 18, FIG.
The same parts as those shown in FIG. 17 are denoted by the same reference numerals as those shown in these drawings. A major difference between the image forming apparatus shown here and the image forming apparatus having the simple matrix arrangement shown in FIG.

In FIG. 18, a grid electrode 1601 is provided between the substrate 1501 and the face plate 1206. The grid electrode 1601 is for modulating the electron beam emitted from the surface conduction electron-emitting device. In order to allow the electron beam to pass through a stripe-shaped electrode provided orthogonal to the ladder-type element row, One circular opening 1602 is provided for each element.

The shape and installation position of the grid are not limited to those shown in FIG. For example, a large number of passage openings may be provided in a mesh shape as openings, and a grid may be provided around or near the surface conduction electron-emitting device. Outer terminal 1603 and grid Outer terminal 1
604 is electrically connected to a control circuit (not shown).

In the image forming apparatus of this example, the modulation signals for one line of the image are simultaneously applied to the grid electrode columns in synchronization with the sequential driving (scanning) of the element rows one column at a time. This makes it possible to control the irradiation of the phosphor with each electron beam and display the image line by line.

The image forming apparatus of the present invention can be used not only as a display apparatus for television broadcasting, a display apparatus such as a TV conference system and a computer, but also as an image forming apparatus as an optical printer constituted by using a photosensitive drum or the like. Can be used.

[0109]

EXAMPLES Hereinafter, specific examples will be described with reference to FIGS.
Further, the present invention will be described in detail with reference to FIG. 3, but the present invention is not limited thereto.

[Embodiment 1] A specific manufacturing example will be described below with reference to FIGS. 1, 2 and 3. In FIG. 1, 11 is a face plate formed of a glass material on which an image forming member (phosphor) on which an image is formed by irradiation of an electron beam emitted from the electron emitting device is mounted, and 13 is a face plate mounted with the electron emitting device. A rear plate made of a glass material having the same coefficient of linear expansion as 11;
Is a through hole for inserting a pin formed at a diagonal position of the non-image area of the face plate 11 and the rear plate 13, and 14 is a pin made of a stainless material.

Face plate 11 and rear plate 13
The two through-holes 12 of 1 were overlapped and processed simultaneously. Stainless pin 1 corresponding to the hole 12
No. 4 was machined smaller than the hole 12 with a high precision lathe.
The diameter difference between the hole and the pin is determined in consideration of the thermal expansion of the material when the sealing material 31 (low melting point frit glass) shown in FIG.
In this embodiment, the positioning accuracy is within ± 5 μm. Based on this accuracy, the hole diameter at normal temperature and the pin diameter were determined from the linear expansion coefficient of the hole and the pin material so that the diameter difference (gap) between the hole and the shaft when the melting temperature reached (400 ° C.) was 10 μm. Hole 1
The diameter of 2 was set to 5 mm, and the diameter of the pin 14 was set to 4.975 mm.

With this hole as a reference, the image forming member is placed on the face plate 11, and the electron-emitting device is placed on the rear plate 13.
Respectively formed. Details of the forming method are described in the above embodiments.

Next, a method of manufacturing an image forming apparatus using the above members will be described.

(A) Setting at normal temperature As shown in FIG. 2, a rear plate 13 having an electron-emitting device having two holes is inserted into two pins 14, and the rear plate 13 is previously covered with frit glass. A frame 15 having both ends (Z direction in FIG. 2) coated with a certain sealing material 31 (see FIG. 3) is placed, and finally the face plate 11 having two holes is laminated. These steps were performed at room temperature. During the process, the pin 14 could be smoothly inserted when inserting it into the hole 12. In this state, it is put in a heating device (not shown). A 10 kg weight (not shown) was placed on the face plate 11 so that the sealing material 31 sinks in order to melt and seal the sealing material 31. This state corresponds to (a) in FIG. 3, and the center of the hole inner diameter D1 and the center of the pin inner diameter D2 were not aligned with each other, resulting in a deviation of ΔX.

(B) When the melting temperature of the sealing material has been reached After that, when the temperature inside the heating device (not shown) is gradually raised to 400 ° C., the hole diameter undergoes thermal expansion as shown in (2) of FIG. Expands (D1 + α) and also expands the pin diameter (D2 + α). As a result, the diameter difference between the hole diameter and the pin diameter was 10 μm or less, and the positioning accuracy was within ± 5 μm.

(C) State of returning to normal temperature again After that, the temperature of the heating device (not shown) is gradually cooled. The face plate 11 and the support frame 15 and the rear plate 13 and the support frame 15 are fixed to each other by the sealing material 31, and the hermetically sealed container functioning as a display panel is completed after desired positioning. Finally, the display panel 16 is removed from the pin 14. The gap between the pin 14 and the hole 12 at the time of removal is the gap at room temperature before sealing. As a result, the pin 14 could be easily removed from the hole 12.

When the display panel manufactured by the manufacturing apparatus of the present invention was driven and displayed as shown in the embodiment, a bright and stable image with no color shift could be obtained. With the above-described configuration, (i) an image forming apparatus having no misalignment can be manufactured, so that a good image can be obtained with little deterioration in image quality, and (ii) easy removal,
A manufacturing apparatus having advantages such as being able to manufacture a manufacturing apparatus that is inexpensive and excellent in mass productivity is presented.

[Second Embodiment] Next, a second embodiment of the present invention will be described. FIG. 4, FIG. 5, and FIG. 6 are drawings showing well the characteristics of the second embodiment. FIG. 4 is a diagram showing the relationship of stacking of members, FIG. 5 is a diagram in which the members are combined, and FIG. 6 is a sectional view taken along the line AA of FIG. It is a figure.

In FIG. 4, 11 is a face plate made of a glass material on which an image forming member (phosphor) on which an image is formed by irradiation of an electron beam emitted from an electron emitting element is mounted, and 13 is an electron emitting element. Rear plate made of glass material mounted, 12 is face plate 11
And a through hole for inserting a pin formed in an area outside the image of the rear plate 13, 14 is a pin made of a stainless material, and 41 is for emitting electrons from the rear plate 12 to the face plate 11 side in a stable trajectory. The shield plate is made of a material having a linear expansion coefficient similar to that of the face plate 11 and the rear plate 13. The shield plate 41 has minute holes 43 corresponding to the number of electron sources. Reference numeral 42 is a positioning hole formed at the same position as the hole 12 formed in the face plate 11 and the rear plate 13, and 44 is a fixed base for assembly when the members are stacked. The assembly fixing base 44 and the pin 14 are not connected.

Face plate 11 and rear plate 13
The through holes 12 and 42 provided at two positions respectively on the shielding plate 41 were overlapped and processed at the same time.
Stainless steel pin 14 corresponding to the holes 12 and 42
Was machined smaller than the holes 12 and 42 on a high precision lathe. The diameter difference between the hole and the pin is determined in consideration of the thermal expansion of the material when the sealing material 31 (low melting point frit glass) shown in FIG. 6 reaches a melting temperature and the positioning accuracy that is the device performance.

In this embodiment, the positioning accuracy is within ± 5 μm. Based on this accuracy, when the melting temperature is reached (400
The hole diameter and the pin diameter at room temperature were determined from the linear expansion coefficient of the hole and the pin material so that the diameter difference (gap) between the hole and the shaft at 10 ° C. was 10 μm. The diameter of the hole 12 is 5 mm and the diameter of the pin 14 is 4.9.
It was set to 75 mm.

With the hole 12 as a reference, the electron-emitting device and the image forming member were formed on the face plate 11 and the rear plate 13, respectively. Details of the forming method are described in the above embodiments. Further, the holes 42 formed in the shielding plate 41
The micro holes 43 were processed and formed on the basis of. The diameter of the minute hole 43 is 60 μm.

Next, a method of manufacturing an image forming apparatus using the above members will be described mainly with reference to FIG. FIG.
5 is a cross-sectional view taken along line AA of FIG. 5, where (a) is the setting at room temperature, (b) is the sealing material melting temperature reached,
(C) shows the state returned to normal temperature again.

Details of each state will be described below.

(A) Setting at normal temperature Place the rear plate 13 on the base 44, insert the pins 14 into the two holes formed in the rear plate 13, and then insert the pins 14 into the holes 42 of the shielding plate 41. Insert. Frit glass (not shown) is applied to the shielding plate 41 so as to avoid the minute holes 43 and to be applied to almost the portion of the frame that contacts the rear plate. A frame 15 having both ends coated with a sealing material 31, which is frit glass, is placed on the shielding plate 41, and finally inserted into the face plate 11 having two holes.
These steps were performed at room temperature.

During the process, the pin 14 could be smoothly inserted when it was inserted into the holes 12 and 42. In this state, it is put in a heating device (not shown). A 10 kg weight (not shown) was placed on the face plate 11 so that the sealing material 31 sinks in order to melt and seal the sealing material 31. This state corresponds to (a) of FIG. 6, and the center of the hole inner diameter D1 and the center of the pin inner diameter D2 were not aligned with each other, resulting in a deviation of ΔX.

(B) When the melting temperature of the sealing material has been reached After that, when the temperature inside the heating device (not shown) is gradually raised to 400 ° C., the hole diameter undergoes thermal expansion as shown in FIG. 6 (b). Expands and contracts (D1 + α), and the pin diameter expands (D2 +
a) As a result, the diameter difference between the hole diameter and the pin diameter is 10 μm.
Below, the positioning accuracy was achieved within ± 5 μm.

(C) State where the temperature is returned to room temperature again After that, the temperature of the heating device (not shown) is gradually cooled. The face plate 11 and the support frame 15 and the rear plate 13 and the support frame 15 are fixed to each other by the sealing material 31, and the hermetically sealed container functioning as a display panel is completed after desired positioning. Finally, the display panel 16 is removed from the pin 14. The gap between the pin 14 and the hole 12 at the time of removal is the gap at room temperature before sealing. As a result, the pin 14 could be easily removed from the hole 12.

When the display panel manufactured by the manufacturing apparatus of the present invention was driven and displayed as shown in the embodiment, a bright and stable image without color shift could be obtained. The second embodiment has been shown to be effective when laminating the shielding plate on the display panel.

[Embodiment 3] Next, a third embodiment of the present invention will be described. FIG. 7 and FIG. 8 are drawings showing well the features of the third embodiment. FIG. 7 is a view for sequentially explaining stacking when two panels are simultaneously positioned and manufactured, and FIG. 8 is a view showing a state where FIG. 7 is assembled.

In FIG. 7, 11 is a face plate made of a glass material on which an image forming member (phosphor) on which an image is formed by irradiation of an electron beam emitted from an electron emitting element is formed, and 13 is an electron emitting element. A rear plate formed of a glass material having the same linear expansion coefficient as that of the mounted face plate 11, 12 is a through hole for inserting a pin formed at a diagonal position of an area outside the image of the face plate 11 and the rear plate 13, 14 is a pin made of a stainless material, 15 is a support frame, 71 is a face plate 11 and a rear plate 13 on which an image forming member (phosphor) on which an image is formed by irradiation of an electron beam emitted from an electron-emitting device is mounted. A face plate made of a glass material having the same linear expansion coefficient as that of the reference numeral 13, and 13 a face having an electron-emitting device mounted thereon. Rate 11 and the rear plate 13
And a second rear plate made of a glass material having the same linear expansion coefficient as the face plate 71, and 74 a second face plate 71 and a second rear plate 72.
Reference numeral 73 is a through hole for inserting a pin formed at a diagonal position of the non-image area of the above, and 73 is a support frame.

Face plate 11 and rear plate 13
And through holes 12 and 74 provided at two positions of the second face plate 71 and the second rear plate 72, respectively.
Were processed by overlapping each other. The hole 12
The pins 14 made of stainless steel corresponding to and 42 were machined smaller than the holes 12 and 42 on a high-precision lathe.
The difference in diameter between the hole and the pin depends on the material when the sealing material (low melting point frit glass) (not shown) previously applied to the upper and lower sides (Z direction of the paper surface) of the support frames 15 and 73 reaches a temperature at which it melts. It is determined in consideration of the thermal expansion and the positioning accuracy that is the device performance.

In this embodiment, the positioning accuracy is within ± 5 μm. Based on this accuracy, when the melting temperature is reached (400
The hole diameter and the pin diameter at room temperature were determined from the linear expansion coefficient of the hole and the pin material so that the diameter difference (gap) between the hole and the shaft at 10 ° C. was 10 μm. The diameter of the hole 12 is 5 mm and the diameter of the pin 14 is 4.9.
It was set to 75 mm.

Further, the image forming member and the electron-emitting device were formed with reference to the holes 12 and 74 of the face plate 11 and the rear plate 13 and the second face plate 71 and the second rear plate 72, respectively. Details of the forming method are described in the above embodiments. FIG. 8 is a diagram in which the above members are combined, and in this state, the positioning process is completed through the same firing process as in Example 1, and two sets of display panels can be manufactured. When the display panel manufactured by the manufacturing apparatus of the present invention was driven and displayed as shown in the embodiment, a bright and stable image free from color misregistration could be obtained with the two sets of display panels.

The third embodiment has been shown to be effective when manufacturing a large number of display panels at the same time, and it has been confirmed that this is a method and an apparatus for manufacturing an image forming apparatus with high mass productivity. In addition, although an example of two sets of panels is shown in the third embodiment, the number of sheets is not limited at all.

[0136]

As described above, according to the present invention, there is almost no misalignment due to thermal expansion, highly accurate alignment can be performed with a high yield, safe image formation is possible, and image formation is excellent in mass productivity. An apparatus manufacturing method and a manufacturing apparatus are provided.

[Brief description of drawings]

FIG. 1 is a configuration diagram showing a first embodiment of the present invention.

FIG. 2 is an exploded explanatory view showing the first embodiment of the present invention.

FIG. 3 is an explanatory view showing an assembled state of the first embodiment of the present invention.

FIG. 4 is an exploded explanatory view showing a second embodiment of the present invention.

FIG. 5 is a configuration diagram showing a second embodiment of the present invention.

FIG. 6 is an explanatory view showing an assembled state of the second embodiment of the present invention.

FIG. 7 is an exploded explanatory view showing a third embodiment of the present invention.

FIG. 8 is a configuration diagram showing a third embodiment of the present invention.

9A and 9B are views showing the configuration of a basic surface conduction electron-emitting device used for carrying out the present invention (where (a) is a schematic plan view and (b) is a sectional view).

FIG. 10 is a schematic side view showing the configuration of a basic vertical surface conduction electron-emitting device used for implementing the present invention.

FIG. 11 is a process explanatory view showing an example of a method of manufacturing a surface conduction electron-emitting device used for implementing the present invention.

FIG. 12 is a graph showing an example of a voltage waveform of energization forming.

FIG. 13 is a schematic configuration diagram of a measurement / evaluation apparatus for measuring electron emission characteristics.

FIG. 14 is an explanatory diagram showing a configuration of an electron source having a simple matrix arrangement.

FIG. 15 is an explanatory diagram showing a configuration example of a fluorescent film.

FIG. 16 is a block diagram showing an example of an image forming apparatus incorporating a drive circuit for performing display according to an NTSC television signal.

FIG. 17 is a plan view showing an example of the configuration of a ladder-arranged electron source used in the present invention.

FIG. 18 is a schematic configuration perspective view showing an example of an image forming apparatus of the present invention.

FIG. 19 is an explanatory diagram showing a configuration example of a conventional surface conduction electron-emitting device.

[Explanation of symbols]

11 Face Plate 12, 42 Hole 13 Rear Plate 14 Pin 15 Frame 16, 1401 Display Panel 31 Sealing Material 41 Shielding Plate 43 Micro Hole 44 Assembly Fixing Stand 71 Substrate 72, 73 Element Electrode 74 Conductive Thin Film 75 Electron Emitting Section 81 Step forming portion 1101 Electron source substrate 1102 X-direction wiring 1103 Y-direction wiring 1104 Surface conduction electron-emitting device 1105 Connection 1201 Rear plate 1202 Support frame 1203 Glass substrate 1204 Fluorescent film 1205 Metal back 1206 Face plate 1207 High voltage terminal 1208 Envelope 1301 Black member 1302 Phosphor 1402 Scanning circuit 1403 Control circuit 1404 Shift register 1405 Larain memory 1406 Synchronization signal separation circuit 1407 Modulation signal generator 1501 Electron source substrate 1502 Electricity Emission element 1503 Common wiring (Dx1 to Dx10) for wiring electron emission elements 1601 Grid electrode 1602 Opening for passing electrons 1603 Outer container terminal made of Dox1, Dox2, to Doxm 1604 G1, G2 connected to grid electrode 〜〜
Outer terminal consisting of Gn Vx, Va DC voltage source

Claims (13)

[Claims] 1. A rear plate on which an electron-emitting device is mounted, and a face plate which is arranged to face the rear plate on which an image-forming member on which an image is formed by irradiation of an electron beam emitted from the electron-emitting device is mounted. A method for manufacturing an image forming apparatus in which these are hermetically sealed with a sealing material,
(1) In the face plate and the rear plate,
It has at least two or more holes, (2) a pin is inserted into the holes at room temperature, (3) firing is performed, and (4) when the sealing firing temperature of the sealing material is reached, (5) ) A method for manufacturing an image forming apparatus, characterized in that positioning of the face plate and the rear plate is completed due to a difference in thermal expansion of materials, and the pin is removed from the hole at room temperature to manufacture. 2. The method for manufacturing an image forming apparatus according to claim 1, wherein the pin diameter is smaller than the hole diameter when the sealing and firing temperature is reached. 3. The value obtained by subtracting the pin diameter when the sealing temperature is reached from the hole diameter when the sealing firing temperature is reached is within the desired positioning accuracy. A method for manufacturing the image forming apparatus described. 4. The method of manufacturing an image forming apparatus according to claim 1, wherein the holes are formed at the same positions of the face plate and the rear plate. 5. The method of manufacturing an image forming apparatus according to claim 1, wherein the electron-emitting device and the image forming member are positioned and formed with reference to the hole position. 6. The method of manufacturing an image forming apparatus according to claim 1, wherein a surface conduction electron-emitting device is used as the electron-emitting device. 7. A rear plate having an electron-emitting device mounted thereon, and a face plate arranged to face the rear plate having an image-forming member on which an image is formed by irradiation of an electron beam emitted from the electron-emitting device. An apparatus for manufacturing an image forming apparatus that hermetically seals these with a sealing material,
(1) A fixing jig capable of fixing the face plate and the rear plate, or the face plate and the rear plate, respectively. (2) At least two or more holes are provided, and (3) The holes are formed at room temperature. Pins are inserted, (4) firing is performed, (5) when the sealing firing temperature of the sealing material is reached, (6) positioning of the face plate and the rear plate is completed due to the difference in thermal expansion of the materials. An apparatus for manufacturing an image forming apparatus, wherein the pin is removed from the hole at room temperature for manufacturing. 8. The apparatus for manufacturing an image forming apparatus according to claim 7, wherein the pin diameter is smaller than the hole diameter when the sealing and firing temperature is reached. 9. A configuration in which a value obtained by subtracting a pin diameter when the sealing temperature is reached from a hole diameter when the sealing firing temperature is reached is within a desired positioning accuracy. 7. An apparatus for manufacturing an image forming apparatus according to 7 or 8. 10. The manufacturing apparatus of an image forming apparatus according to claim 7, wherein the hole is formed at the same position of the face plate and the rear plate. 11. The image forming apparatus manufacturing apparatus according to claim 7, wherein the electron emitting element and the image forming member are formed with reference to the hole position. 12. The image forming apparatus manufacturing apparatus according to claim 7, wherein the pin has a linear expansion coefficient larger than that of the hole. 13. A surface conduction electron-emitting device is used as said electron-emitting device.
3. The image forming apparatus manufacturing apparatus according to any one of 3 above.