JPH09236921A - Positive type photosensitive composition - Google Patents

Abstract

PROBLEM TO BE SOLVED: To obtain a compsn. having high resolving power and satisfactory heat resistance. SOLUTION: This compsn. contains an alkali-soluble resin having phenolic hydroxyl groups or a resin obtd. by protecting the hydroxyl groups with acid- unstable groups and a photo-acid initiator. The wt. average mol.wt. of the alkali-soluble resin is 6,000-60,000 and the resin contains <=10wt.% component whose mol.wt. is <=4,000 and >=80% component whose mol.wt. is 4,000-70,000.

Description

Detailed Description of the Invention

[0001]

TECHNICAL FIELD The present invention relates to a positive photosensitive composition. More specifically, the present invention relates to a positive photosensitive composition having excellent heat resistance and suitable for a positive resist for producing a semiconductor integrated circuit.

[0002]

2. Description of the Related Art The wave of high integration and high density of a semiconductor integrated circuit is remarkably fast, especially in a DRAM (Dynami).
c Random Access Memory) has already begun mass production of 16 Mbit,
It is said that products with a storage capacity of 4 Mbits and 256 Mbits will also start production. 0.50 at 16 Mbit
The line width that was μm is 64Mbit, 256MbitDR
In AM, design rules of 0.30 μm and 0.25 μm are applied, and development of a photoresist corresponding to such quarter-micron lithography is urgently required.

Examples of lithography compatible with quarter micron include X-ray lithography and electron beam lithography. In the former case, there is a noticeable lag in terms of hardware, and in the latter case, it is not suitable for mass production in terms of throughput. On the other hand, the deep-UV lithography represented by KrF excimer laser allows batch exposure and is excellent in throughput. Therefore, development of a resist having a good pattern profile corresponding to the deep-UV lithography is desired. BACKGROUND ART Conventionally, a photoresist containing an alkali-soluble novolac resin and a naphthoquinonediazide-based photosensitizer has been known for g-line and i-line lithography.

Further, since the molecular weight of the base resin has a great influence on the dissolution rate of the resist and the performance such as the resist pattern, the high molecular weight component of the novolak resin is used to control the developability of the photoresist using the alkali-soluble novolac resin. Attempts have been made to limit it (Japanese Patent Laid-Open No. 62-121754). However, the alkali-soluble novolac-naphthoquinonediamide photoresist has a large absorption at 300 nm or less, and when exposed using deep ultraviolet rays, a good pattern profile cannot be obtained and the resolution is also poor. . Therefore, the novolak naphthoquinone diazide-based material is unsuitable for lithography using deep ultraviolet rays.

Therefore, as a high-performance resist that does not have such a defect, a resist called a chemically amplified resist is being studied. This is a photoacid generator that generates an acid by light irradiation,
The positive photosensitive composition is a combination of a resin having a functional group that is easily eliminated by an acid, and a resin whose dissolution rate in an alkaline developer changes before and after the functional group is eliminated.
Further, as a base resin for the chemically amplified resist, KrF is used.
A polyvinylphenol derivative having excellent transparency at the wavelength of an excimer laser is known. By the way, DRA
When manufacturing M, there is an etching step as a post-lithography step, and there are wet etching and dry etching as etching steps, but dry etching has become the mainstream today because high resolution is required. Since the dry etching is performed by plasma, the temperature becomes high when the plasma is generated. However, in the case of a resist having no heat resistance, the resist pattern is deformed by heat, and the etching cannot be performed according to the dimensions. Therefore, there is a demand for a resist having heat resistance so that the resist pattern is not deformed by heat.

[0006]

SUMMARY OF THE INVENTION An object of the present invention is to provide a positive type photosensitive composition which maintains performances such as developability and resolution and has improved heat resistance.

[0007]

Means for Solving the Problems As a result of intensive studies conducted by the present inventors to achieve the above object, as a result of removing a low molecular weight component of an alkali-soluble resin in a chemically amplified photoresist, The inventors have found that heat resistance can be improved while maintaining performance such as developability and resolution, and reached the present invention. That is, the gist of the present invention is a phenolic hydroxyl group-containing alkali-soluble resin or a positive type photosensitive composition containing a resin in which the hydroxyl group is protected by an acid labile group and a photoacid generator. Weight average molecular weight of soluble resin is 6000-600
And a component having a molecular weight of less than 4000 is 10% by weight or less, and a component having a molecular weight of 4000 to 70,000 is 80% by weight or more.

Hereinafter, the present invention will be described in detail. In the present invention, as the phenolic hydroxyl group-containing alkali-soluble resin, the weight average molecular weight is 6000 to 60,000, the component having a molecular weight of less than 4000 is 10% by weight or less, and the molecular weight is 40.
It is not particularly limited as long as the component of 00 to 70,000 is 80% by weight or more, and a conventionally known phenolic hydroxyl group-containing alkali-soluble resin prepared so as to satisfy the above molecular weight can be used. The weight average molecular weight is preferably 8000 to 60,000, more preferably 1000.
It is 0 to 50,000. It is preferable that the component having a molecular weight of less than 4000 is 5% by weight or less and the component having a molecular weight of 4000 to 70,000 is 90% by weight or more.

As a method for adjusting the phenolic hydroxyl group-containing alkali-soluble resin to the above range, there are a fractional precipitation method, a fractional dissolution method, a column fractionation method, an ultracentrifugation method and the like, and any method may be used. What is the molecular weight of the resin? GPC
The values obtained by separating and measuring in accordance with are converted into polystyrene. If the molecular weight of the alkali-soluble resin is smaller than the above range, sufficient heat resistance, which is the object of the present invention, cannot be obtained, and if it is larger than this range, the solubility of the unexposed portion in an alkali developing solution becomes small, which is good. No resist pattern can be obtained. As a specific resin, novolac resin, polyvinyl phenol, or derivatives thereof are used. Of these, polyvinylphenol and its derivatives are particularly preferable.

Specific examples of polyvinylphenol and its derivatives include o-hydroxystyrene, m-hydroxystyrene, p-hydroxystyrene, 2- (o-hydroxyphenyl) propylene, 2- (m-hydroxyphenyl) propylene, In the presence of hydroxystyrenes such as 2- (p-hydroxyphenyl) propylene, alone or in combination of two or more, or acrylic acid, methacrylic acid, acrylic acid esters or methacrylic acid esters and a radical polymerization initiator or a cationic polymerization initiator. A polymerized resin is used. Further, a resin which has been subjected to hydrogenation in order to reduce the absorbance of the resin after polymerization may be used.

The acid labile group for protecting the hydroxyl group of the phenolic hydroxyl group-containing alkali-soluble resin is not particularly limited as long as it is a protective group capable of leaving by an acid, and examples thereof include a tert-butyloxycarbonyloxy group. Examples thereof include alkylcarbonyloxy groups, alkoxy groups such as tert-butoxy groups, tetrahydropyranyl groups, tetrahydrofuranyl groups, acetal groups such as ethoxyethyl groups, and the like. A substituent represented by the following general formula (I) is preferable, and a tetrahydropyranyl group, a tetrahydrofuranyl group or an ethoxyethyl group is more preferable.

[0012]

[Chemical 6]

(In the formula, R ^{1 to} R ⁵ are independently a hydrogen atom,
It is an alkyl group or an alkoxyl group having 1 to 4 carbon atoms, and R ¹ and R ³ may combine with each other to form a ring. ) The resin of the present invention preferably has a hydroxyl group protected with an acid labile group. The protection rate of the phenolic hydroxyl group of the alkali-insoluble resin by the acid labile group is not particularly limited,
5 to 60% is preferable, and 10 to 50% is particularly preferable.
If the protection ratio is lower than the above value, the residual film ratio of the unexposed portion of the resist film tends to decrease, and the resolution tends to decrease. On the other hand, if the protection rate is too large, the developer may be repelled at the time of development and development may not be possible.

The photo-acid generator used in the present invention is not particularly limited as long as it can generate an acid by the light used for exposure, and conventionally known ones can be used. , For example, tris (trichloromethyl) -s-triazine, tris (tribromomethyl)-
s-triazine, tris (dibromomethyl) -s-triazine, 2,4-bis (tribromomethyl) -6-p-
Halogen-containing s-triazine derivatives such as methoxyphenyl-s-triazine, halogen-substituted paraffins such as 1,2,3,4-tetrabromobutane, 1,1,2,2-tetrabromoethane, carbon tetrabromide and iodoform. -Based hydrocarbons, halogen-substituted cycloparaffinic hydrocarbons such as hexabromocyclohexane, hexachlorocyclohexane and hexabromocyclododecane, halogen-containing benzene derivatives such as bis (trichloromethyl) benzene and bis (tribromomethyl) benzene, tribromomethylphenyl Halogen-containing sulfone compounds such as sulfone, trichloromethylphenyl sulfone and 2,3-dibromosulfolane, halogen-containing isocyanurate derivatives such as tris (2,3-dibromopropyl) isocyanurate, and triphenyl Sulfonium such as sulfonium chloride, triphenylsulfonium methanesulfonate, triphenylsulfonium trifluoromethylsulfonate, triphenylsulfonium, p-toluenesulfonate, triphenylsulfonium tetrafluoroborate, triphenylsulfonium hexafluoroarsenate, triphenylsulfonium hexafluorophosphonate Salts, diphenyliodonium trifluoromethylsulfonate, diphenyliodonium p-toluenesulfonate, diphenyliodonium tetrafluoroborate, diphenyliodonium hexafluoroarsenate, diphenyliodonium hexafluorophosphonate, and other iodonium salts, methyl p-toluenesulfonate, p-toluenesulfone Ethyl, butyl p- toluenesulfonic acid, p- toluenesulfonic acid phenyl, 1,2,3-tri (p- toluenesulfonyl) benzene, p- toluenesulfonic acid benzoin ester,
Methyl methanesulfonate, ethyl methanesulfonate, butyl methanesulfonate, 1,2,3-tri (methanesulfonyl) benzene, phenyl methanesulfonate, benzoin methanesulfonate ester, methyl trifluoromethanesulfonate, ethyl trifluoromethanesulfonate Butyl trifluoromethanesulfonate, 1,2,3
-Sulfonates such as tri (trifluoromethanesulfonyl) benzene, phenyl trifluoromethanesulfonate, benzoin trifluoromethanesulfonate, etc., disulfones such as diphenyldisulfone, di (cyclohexyl) diazomethane, di (phenylsulfonyl) diazomethane, etc. Sulfonediazides,
Examples thereof include o-nitrobenzyl esters such as o-nitrobenzyl-p-toluenesulfonate, sulfone hydrazides such as N, N′-di (phenylsulfonyl) hydrazide, and the like. Particularly good photoacid generators include diphenyldisulfones represented by the following general formula (II), sulfonium salts represented by the following general formula (III), and general formula (IV) below.
Is preferable, or sulfonediazide represented by the following general formula (V) is preferable, and more preferably diphenyldisulfone, triphenylsulfonium tosylate, triphenylsulfonium triflate, diphenylsulfonium tosylate, diphenylsulfonium triflate, diphenylsulfone triflate, Examples thereof include (phenylsulfonyl) diazomethane and di (cyclohexylsulfonyl) diazomethane.

[0015]

Embedded image (In the formula, R ⁶ and R ⁷ are independently a hydrogen atom, a nitro group, a methyl group or a methoxy group.)

[0016]

Embedded image (In the formula, R ⁸ , R ⁹ , and R ¹⁰ are each independently a phenyl group,
Represents an alkyl-substituted phenyl group having 1 to 6 carbon atoms and an alkoxy-substituted phenyl group having 1 to 6 carbon atoms, X
^1- represents P-toluenesulfonyl anion, trifluoromethanesulfonyl anion, chlorine anion, methanesulfonyl anion. )

[0017]

Embedded image (In the formula, R ¹¹ and R ¹² are each independently a phenyl group and a carbon number of 1
An alkyl-substituted phenyl group having 6 or more and 6 or less, a carbon number of 1 or more and 6
Represents the following alkoxy-substituted phenyl group, wherein X ²⁻ is p−
It represents a toluenesulfonyl anion, a trifluoromethanesulfonyl anion, a chlorine anion, and a methanesulfonyl anion. )

[0018]

Embedded image (In the formula, R ¹³ and R ¹⁴ are each independently a phenyl group and a carbon number of 1
An alkyl-substituted phenyl group having 6 or more and 6 or less, a carbon number of 1 or more and 6
The following represents an alkoxy-substituted phenyl group, an alkyl group having 1 to 10 carbon atoms, and a cycloalkyl group having 5 to 10 carbon atoms. ) In the photosensitive composition of the present invention, 100 parts by weight of a phenolic hydroxyl group-containing alkali-soluble resin or a resin in which the hydroxyl group is protected by an acid labile group (hereinafter, these are collectively referred to as the present resin) Photo acid generator 0.001 to 3
It is used in an amount of 0 part by weight, preferably 0.05 to 20 parts by weight. If the amount of the photo-acid generator is less than this range, the sensitivity will be poor. When the amount of the photo-acid generator is larger than this range, the transparency of the resist film is lowered by the photo-acid generator and the resist pattern becomes trapezoidal, which may cause a reduction in resolution.

Additives can be added to the resist of the present invention, and examples include a dissolution inhibitor, an organic base, and a surfactant. The dissolution inhibitor reduces the alkali dissolution rate of the resin by adding it to the resin and improves the dissolution contrast. Specifically, phenol, cresol,
Terminate hydroxyl groups of phenols such as bisphenol A
Examples thereof include compounds protected with an acid labile group such as t-butyloxycarbonyloxy group, tert-butoxy group, tetrahydropyranyl group, tetrahydrofuranyl group and ethoxyethyl group. The dissolution inhibitor is used in an amount of 1 to 50 parts by weight, preferably 5 to 40 parts by weight, based on 100 parts by weight of the resin of the present invention.

When the amount of the dissolution inhibitor is used within this range, a sufficient change in the dissolution rate can be obtained between the exposed area and the unexposed area.
A particularly good resist pattern can be obtained. If the amount of the dissolution inhibitor is too large, sufficient heat resistance may not be obtained. The organic base prevents the acid generated from the photo-acid generator from diffusing to the unexposed area, and specific examples thereof include alkylamines, arylamines, pyridines and pyridinium salts. Is used in an amount of 0.0001 to 5 parts by weight, preferably 0.001 to 2 parts by weight, based on 100 parts by weight of the resin of the present invention. When the organic base is used in an amount within the above range, an effect of sufficiently preventing diffusion of an acid to the unexposed portion can be obtained, and a good resist pattern can be obtained, which is preferable. However, if it is excessively large, the sensitivity of the resist is lowered, which is not preferable.

Usually, the photosensitive composition of the present invention is used by dissolving each of the above components in a suitable solvent. The solvent is not particularly limited as long as it is a solvent that has sufficient solubility with respect to the photo-acid generator, the additive, and the resin and provides good coating properties, but it is a ketone such as 2-hexanone or cyclohexanone. System solvents, cellosolve solvents such as methyl cellosolve, ethyl cellosolve, methyl cellosolve acetate, ethyl cellosolve acetate, diethyl oxalate, ethyl pyruvate, ethyl-2-hydroxybutyrate, ethyl acetoacetate, butyl acetate, amyl acetate, ethyl butyrate. , Butyl butyrate, methyl lactate, ethyl lactate, ester solvents such as methyl 3-methoxypropionate, propylene glycol monomethyl ether, propylene glycol monoethyl ether, propylene glycol monobutyl ether, propylene glycol monomethyl ether Propylene glycol solvents such as teracetate, propylene glycol monoethyl ether acetate, propylene glycol monobutyl ether acetate, and dipropylene glycol dimethyl ether, ketone solvents such as cyclohexanone, methyl amyl ketone, and 2-heptanone, or mixed solvents thereof, or further Those to which an aromatic hydrocarbon is added are included. The use ratio of the solvent is preferably in the range of 1 to 20 times as a weight ratio with respect to the total amount of solids in the photosensitizer composition.

When a resist pattern is formed on a semiconductor substrate using the positive photosensitive composition of the present invention, the positive photosensitive composition of the present invention dissolved in a solvent as described above is usually used on the semiconductor substrate. It can be used as a photoresist after undergoing steps of pre-baking, pattern transfer by exposure, post-exposure baking (PEB) after exposure, and development. The semiconductor substrate is generally used as a substrate for manufacturing a semiconductor, and is a silicon substrate, a gallium arsenide substrate, or the like. A spin coater is usually used for coating, and a high pressure mercury lamp 436 is used for exposure.
nm, 365 nm light, low pressure mercury lamp 254 nm, or excimer laser as a light source 157 nm, 19
Light of 3 nm, 222 nm and 248 nm is preferably used. Light at the time of exposure may be broad instead of monochromatic light. Further, exposure by the phase shift method can also be applied.

The developer of the positive photoresist composition of the present invention contains sodium hydroxide, potassium hydroxide, sodium carbonate, sodium silicate, sodium metasilicate,
Inorganic alkalis such as aqueous ammonia, ethylamine, n
-Primary amines such as propylamine, secondary amines such as diethylamine and di-n-propylamine, tertiary amines such as triethylamine, N, N-diethylmethylamine, tetramethylammonium hydroxide, It is possible to use a quaternary ammonium salt such as trimethylhydroxyethylammonium hydroxide, or a quaternary ammonium salt to which an alcohol, a surfactant or the like is added. The positive photoresist composition of the present invention is useful not only for VLSI production but also for general IC production, mask production, image formation, liquid crystal screen production, color filter production or offset printing.

[0024]

Next, the present invention will be described in more detail with reference to examples, but the present invention is not limited by the examples unless it exceeds the gist thereof. Preparation of Resins A, B, C, D Polyvinylphenol resin (Maruka Linker PHM-C, manufactured by Maruzen Petrochemical Co., Ltd., weight average molecular weight Mw = 5000-4)
0000) was separated by GPC for each molecular weight to prepare the molecular weight of the polyvinylphenol resin. HLC-8020 manufactured by Tosoh Corporation is used as a measuring device, tetrahydrofuran is used as a moving layer, and a flow rate is 100 m.
The measurement was performed at 1 / min. As a column, TSKgel GMHXL manufactured by Tosoh Corporation was used. Resins A and B protected with a 2,3-dihydropyranyl group were synthesized from the above polyvinylphenol resin having a adjusted molecular weight in an ethyl acetate solvent in the presence of a catalytic amount of hydrochloric acid. The rate of introduction of the protective group was determined by 1H-NMR. The molecular weights and protection rates of Resins A and B are shown in Table 1. Similarly, the above-mentioned polyvinylphenol resin whose molecular weight was adjusted was reacted with ethyl vinyl ether in the presence of a catalytic amount of hydrochloric acid in a solvent of ethyl acetate to give a resin C protected with a 1-ethoxyethyl group.
And D were synthesized. The rate of introduction of the protective group was determined by 1H-NMR. Table 1 shows the molecular weights and protection rates of resins C and D.
It was shown to.

Example 1 A positive type photosensitive composition was prepared by mixing tetrahydropyranylated resin A synthesized by the above method and diphenyldisulfone as a photoacid generator in a solvent at each part by weight shown in Table 2. did. Propylene glycol monomethyl ether acetate (hereinafter referred to as PGMEA) was used as the solvent.
The resist solution is spin-coated on a silicon substrate at 2000 to 3000 rpm, and the temperature is 120 ° C. on a hot plate.
Prebaked for 60 seconds, resist film thickness 0.75μm
A resist coated substrate of was obtained. This substrate is made of NiF KrF
After exposure with an excimer laser reduction projection exposure device (NA = 0.42) and baking at 80 ° C. for 90 seconds, the density is 2.38%.
With tetramethylammonium hydroxide aqueous solution of 60
It was developed for a second to form a pattern. The resolution was evaluated by observing the cross section of the resist pattern thus formed with a scanning electron microscope. The wafer was heated on a hot plate at 120 ° C., 130 ° C. or 140 ° C. for 5 minutes, the wafer was diced and the cross section of the 5.0 μm line and space pattern was observed with a scanning electron microscope. It was found that the resist pattern was deformed at ℃. Table 2 shows these results.

Example 2 A positive photosensitive composition was prepared by mixing ethoxyethylated resin C synthesized by the above method and triphenylsulfonium tosylate as a photoacid generator in a solvent at each weight part shown in Table 2. Was prepared. PGMEA was used as the solvent. A pattern was formed from this resist solution in the same manner as in Example 1, and the resolution and heat resistance were evaluated. As a result, it was found that 0.28 μm was resolved and the resist pattern was deformed at 140 ° C. Table 2 shows these results.

Example 3 An ethoxyethylated resin C synthesized by the above method, di (cyclohexylsulfonyl) diazomethane as a photoacid generator, and triisopropanolamine as an organic base were mixed with a solvent in each part by weight shown in Table 2. Then, a positive photosensitive composition was prepared. PGMEA was used as the solvent. A pattern was formed from this resist solution in the same manner as in Example 1, and the resolution and heat resistance were evaluated. As a result, it was found that 0.28 μm was resolved and the resist pattern was deformed at 130 ° C to 140 ° C. Table 2 shows these results.

Example 4 Ethoxyethylated resin C synthesized by the above method, diphenyliodonium tosylate as a photoacid generator, and triisopropanolamine as an organic base were mixed in a solvent at respective parts by weight shown in Table 2. A positive photosensitive composition was prepared. PGMEA was used as the solvent. A pattern was formed using this resist solution in the same manner as in Example 1, and the resolution and heat resistance were evaluated. As a result, 0.26 μm was resolved, and 13
It was found that the resist pattern was deformed at 0 ° C to 140 ° C. Table 2 shows these results.

Comparative Example 1 A resin B containing 10% by weight or more of a component having a weight molecular weight of less than 4000 was evaluated in the same manner as in Example 1. The results are shown in Table 2. Comparative Example 2 An ethoxyethylated resin D containing 10% by weight or more of a component having a weight molecular weight of less than 4000 was evaluated in the same manner as in Example 1. The results are shown in Table 2.

[0030]

[Table 1]

[0031]

[Table 2]

[0032]

[Table 3]

[0033]

INDUSTRIAL APPLICABILITY The positive photosensitive composition of the present invention has high resolution and good heat resistance, and is useful as a resist for manufacturing VLSI.

 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Michinori Tsukamoto 1000 Kamoshida-cho, Aoba-ku, Yokohama-shi, Kanagawa Mitsubishi Chemical Corporation Yokohama Research Institute (72) Takami Niimi 1000 Kamoshida-cho, Aoba-ku, Yokohama-shi, Kanagawa Address: Yokohama Research Institute, Mitsubishi Chemical Corporation

Claims (7)

[Claims] 1. A positive photosensitive composition containing a phenolic hydroxyl group-containing alkali-soluble resin or a resin in which the hydroxyl group is protected by an acid labile group, and a photoacid generator, wherein a phenolic hydroxyl group-containing alkali-soluble resin is used. Has a weight average molecular weight of 6000 to 60,000, a component having a molecular weight of less than 4000 is 10% by weight or less, and a molecular weight of 4000 to 70,000.
The positive photosensitive composition is characterized in that the component is 80% by weight or more. 2. The positive photosensitive composition according to claim 1, wherein the alkali-soluble resin containing a phenolic hydroxyl group is polyvinyl phenol or a derivative thereof, and the acid labile group is represented by the following general formula (I). Stuff. Embedded image (Wherein, R ^{1 to} R ⁵ are each independently a hydrogen atom,
An alkyl group or an alkoxyl group of R ¹ and R ³
May combine with each other to form a ring. ) 3. The acid labile group is a tetrahydropyranyl group,
The positive photosensitive composition according to claim 2, which is a tetrahydrofuranyl group or an ethoxyethyl group. 4. The positive photosensitive composition according to claim 1, wherein the photoacid generator is represented by the following general formula (II). Embedded image (In the formula, R ⁶ and R ⁷ are independently a hydrogen atom, a nitro group, a methyl group or a methoxy group.) 5. The positive photosensitive composition according to claim 1, wherein the photo-acid generator is represented by the following general formula (III). Embedded image (In the formula, R ⁸ , R ⁹ , and R ¹⁰ are each independently a phenyl group,
Represents an alkyl-substituted phenyl group having 1 to 6 carbon atoms and an alkoxy-substituted phenyl group having 1 to 6 carbon atoms, X
^1- represents p-toluenesulfonyl anion, trifluoromethanesulfonyl anion, chlorine anion, methanesulfonyl anion. ) 6. The positive photosensitive composition according to claim 1, wherein the photo-acid generator is represented by the following general formula (IV). Embedded image (In the formula, R ¹¹ and R ¹² are each independently a phenyl group and a carbon number of 1
An alkyl-substituted phenyl group having 6 or more and 6 or less, a carbon number of 1 or more and 6
Represents the following alkoxy-substituted phenyl group, wherein X ²⁻ is p−
It represents a toluenesulfonyl anion, a trifluoromethanesulfonyl anion, a chlorine anion, and a methanesulfonyl anion. ) 7. The positive photosensitive composition according to claim 1, wherein the photoacid generator is represented by the following general formula (V). Embedded image (In the formula, R ¹³ and R ¹⁴ are each independently a phenyl group and a carbon number of 1
An alkyl-substituted phenyl group having 6 or more and 6 or less, a carbon number of 1 or more and 6
The following represents an alkoxy-substituted phenyl group, an alkyl group having 1 to 10 carbon atoms, and a cycloalkyl group having 5 to 10 carbon atoms. )