JP2001272781A - Positive type radiation sensitive resin composition - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a positive type radiation sensitive resin composition which improves line edge roughness(LER), has high sensitivity and high resolving power and ensures improved surface roughness of a resist pattern. SOLUTION: The positive type radiation sensitive resin composition contains at least (a) a resin having a group which is decomposed by the action of an acid and increases solubility in an alkali developing solution, (b) a compound which generates the acid when irradiated with active light or radiation, (c) an organic carboxylic acid compound, (d) a basic compound and (e) a solvent.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a positive-type radiation-sensitive resin composition which can be suitably used for manufacturing semiconductor integrated circuit elements, masks for manufacturing integrated circuits, printed wiring boards, liquid crystal panels and the like.

[0002]

2. Description of the Related Art As a positive radiation-sensitive resin composition, there is a chemically amplified resist composition described in US Pat. No. 4,491,628, European Patent No. 29,139 and the like. The chemically amplified positive resist composition generates an acid in the exposed area by irradiation with radiation such as far ultraviolet light, and the acid-catalyzed reaction causes the active and non-irradiated parts of the active radiation to dissolve in the developing solution. Is a pattern forming material for forming a pattern on a substrate by changing the pattern.

Examples of such a combination include a combination of a compound capable of generating an acid by photolysis with an acetal or an O, N-acetal compound (JP-A-49-89003), a combination of an orthoester or an amide acetal compound ( JP-A-51-120714), combination with a polymer having an acetal or ketal group in the main chain (JP-A-53-133429), combination with an enol ether compound (JP-A-55-12995), Combination with an acylimino carbonate compound (JP-A-55-12623)
6), a combination with a polymer having an orthoester group in the main chain (JP-A-56-17345), a combination with a tertiary alkyl ester compound (JP-A-60-3625).
Gazette), a combination with a silyl ester compound (JP-A-60
-10247) and a combination with a silyl ether compound (JP-A-60-37549, JP-A-60-12)
1446). These have high photosensitivity because the quantum yield exceeds 1 in principle.

Similarly, systems which are stable at room temperature over time but are decomposed by heating in the presence of an acid and solubilized in alkali are disclosed in, for example, JP-A-59-45439 and JP-A-60-3625. JP-A-62-2229242, JP-A-63-27829, JP-A-63-362.
40, JP-A-63-250642, Polym.Eng.
Sci., 23, 12 (1983); ACS. Sym. 242, 11 (198
4); Semiconductor World 1987, November Publication, 91
Pages: Macromolecules, 21, 1475 (1988); SPIE, 920
Vol. 42, p. 1988 (1988), etc., and a combination of a compound capable of generating an acid upon exposure to light and an ester or carbonate compound of a tertiary or secondary carbon (for example, tert-butyl, 2-cyclohexenyl). Is raised. These systems also have high sensitivity and have a lower absorption in the Deep-UV region than the naphthoquinonediazide / novolak resin system, so that they can be effective systems for shortening the wavelength of the light source.

JP-A-2-198747 discloses a photoresist composition containing a resin in which the phenolic hydroxyl group of poly (p-hydroxystyrene) is completely or partially protected by a tetrahydropyranyl group. Is disclosed. Japanese Patent Application Laid-Open No. 219957/1992 also discloses a photoresist composition characterized by containing a resin in which 20 to 70% of the phenolic hydroxyl groups of poly (p-hydroxystyrene) are substituted with acetal groups. Have been. Further, JP-A-5-249
No. 682 also discloses a photoresist composition using a similar acetal-protected resin.

Further, JP-A-8-123032 discloses a photoresist composition using a terpolymer containing a group substituted with an acetal group. Further, Japanese Patent Application Laid-Open
-113667, JP-A-6-266112, JP-A-6-289608, JP-A-7-209
No. 868 discloses a photoresist composition comprising a hydroxystyrene and a (meth) acrylate copolymer.

Further, JP-A-3-249654 discloses a chemically amplified photoresist composition using a polymer of p-tert-butoxycarbonyloxystyrene, and US Pat. No. 4,491,628 discloses an acid generator. Discloses a resist composition using an onium salt.

Further, a compound comprising a mixture of polyhydroxystyrene substituted with a tert-butoxycarbonyloxy group and polyhydroxystyrene substituted with an acetal group as a resin component, a compound capable of generating an acid upon irradiation with radiation, and an organic carboxylic acid JP-A-8-262721, JP-A-9-6002, and JP-A-9-22117 disclose a positive resist composition containing a compound and a polyhydroxystyrene substituted with a tert-butoxycarbonyloxy group and an acetal group. Japanese Patent Application Laid-Open No. 9-6001 discloses a positive resist containing, as a resin component, a mixture with a polyhydroxystyrene substituted with a compound containing an acid-generating compound, an organic carboxylic acid compound and an amine component. I have.

However, a mixture of a conventional polyhydroxystyrene substituted with a tert-butoxycarbonyloxy group and a polyhydroxystyrene substituted with an acetal group is used as a resin component. It has been found that a positive resist composition containing a carboxylic acid compound and an amine component has a problem of poor line edge roughness (LER). Here, the LER means that the edges at the top and bottom of the resist line pattern fluctuate irregularly in the direction perpendicular to the line direction due to the characteristics of the resist. Means to look uneven.

[0010] JP-A-11-295887 discloses a chemically amplified resist composition comprising an onium salt compound and at least one selected from sulfonate compounds. However, these combinations alone could not improve the resist pattern surface roughness.

In the conventional photoresist composition, particulate roughness was observed on the pattern surface after development. This particulate roughness is remarkably observed when a compound having a bissulfonyldiazomethane structure and a compound having a sulfonium salt structure are mixed and used, and improvement has been demanded.

[0012]

SUMMARY OF THE INVENTION Accordingly, an object of the present invention is to provide a positive radiation-sensitive resin composition having improved LER, high sensitivity and high resolution. Another object of the present invention is to provide a positive radiation-sensitive resin composition in which the surface roughness of a resist pattern is improved.

[0013]

Means for Solving the Problems In view of the present situation, the present inventors have conducted intensive studies, and as a result, mixed polyhydroxystyrenes each substituted with two different specific substituents to form an organic carboxylic acid and an amine. In addition, it was found that by using two different specific photoacid generators, the LER was improved, the sensitivity was high, the resolution was high, and the roughness of the resist pattern surface could be improved. Thus, the present invention has been completed. That is, the positive radiation-sensitive resin composition of the present invention has the following constitution.

[1] (a) a resin having a group which is decomposed by the action of an acid to increase the solubility in an alkaline developer; (b) a compound which generates an acid upon irradiation with actinic rays or radiation; (c) an organic carboxylic acid In a positive-type radiation-sensitive resin composition containing at least an acid compound (d) a basic compound (e) a solvent, the component (a) comprises (1) 5 to 50 mol% of phenolic hydroxyl groups in tert-hydroxyl group. -Butoxycarbonyloxy-substituted polyhydroxystyrene and (2)
5 to 50 mol% of the phenolic hydroxyl group is a mixture with polyhydroxystyrene substituted with an acetal group represented by the general formula (I), and the component (b) is (1) a compound having a bissulfonyldiazomethane structure; (2) A positive-type radiation-sensitive resin composition, which is a mixture with a compound having a sulfonium salt structure.

[0015]

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(Wherein R ₁ is a lower alkyl group having 1 to 4 carbon atoms)

[2] The component (b) is used in an amount of from 20 to 80% by weight based on the total content of the component (b) and the compound (1), and based on the total content of the component (b). 20-80% by weight
The positive radiation-sensitive resin composition according to the above (1), which is the compound of the above (2).

[0018]

DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below in detail.

(A) Resin having a group which is decomposed by the action of an acid to increase the solubility in an alkali developer (also referred to as acid-decomposable resin) The (a) acid-decomposable resin of the present invention comprises (1) Polyhydroxystyrene in which 5 to 50 mol% of the phenolic hydroxyl group has been substituted with a tert-butoxycarbonyloxy group, and (2) 5 to 50 mol% of the phenolic hydroxyl group have been substituted with an acetal group represented by the above general formula (I). And polyhydroxystyrene.

R ₁ represented by the above formula (I) is a lower alkyl group having 1 to 4 carbon atoms, such as methyl, ethyl, n-propyl, iso-propyl, n-butyl,
Examples thereof include an isobutyl group, a sec-butyl group, and a tert-butyl group. Of these, an ethyl group is preferred.

The mixing ratio of the resin component (a) is 20 to 60% by weight for the component (1), 40 to 80% by weight for the component (2),
Preferably, component (1) is 20 to 50% by weight and component (2) is 50 to 80% by weight.

The above-mentioned component (1) can be used to convert the hydroxyl group of polyhydroxystyrene, for example, di-
Substitution with a tert-butoxycarbonyloxy group by tert-butyl-di-carbonate or the like is possible. (1)
The substitution rate of the component is 5 to 50 of the phenolic hydroxyl group.
Mol%, preferably 10 to 40 mol%, and more preferably 20 to 4 mol%.
0 mol% is more preferred. When the substitution rate is less than 5 mol%, the film is significantly reduced, and when the substitution rate exceeds 50 mol%, development defects tend to occur, which is not preferable.

On the other hand, the above-mentioned component (2) is composed of a hydroxyl group of polyhydroxystyrene and, for example, ethyl vinyl ether or n-
It can be obtained by reacting propyl vinyl ether, isopropyl vinyl ether, n-butyl vinyl ether, tert-butyl vinyl ether and the like in the presence of an acidic catalyst.

Also, it can be obtained by substituting the hydroxyl group of polyhydroxystyrene with 1-chloro-1-ethoxyethane or the like according to the method described in the literature.
The substitution rate of the component (2) is 5% of the phenolic hydroxyl group.
~ 50 mol%, preferably 10-40 mol%. When the substitution rate is less than 5 mol%, the film is significantly reduced, and when the substitution rate exceeds 50 mol%, development defects tend to occur, which is not preferable.

Further, the weight average molecular weight of the resin component is as follows:
Each is preferably about 3,500 to 30,000. This can be determined using gel permeation chromatography (GPC) with reference to a polystyrene standard sample. Further, the molecular weight distribution of the resin component can also be determined by GPC, preferably the molecular weight distribution (Mw / M
n) is from 1.01 to 2.8, more preferably from 1.01 to 2.8.
2.0. These polymers can be obtained by a known method such as an anionic polymerization method.

(C) Organic Carboxylic Acid Compound The organic carboxylic acid compound used in the present invention may be a saturated or unsaturated aliphatic carboxylic acid, alicyclic carboxylic acid, oxycarboxylic acid, alkoxycarboxylic acid, ketocarboxylic acid, aromatic carboxylic acid. Although it is not particularly limited as long as it is a compound having a carboxyl group such as an acid, an aromatic carboxylic acid is particularly preferable.

Examples of the aromatic carboxylic acid include benzoic acid, o-hydroxybenzoic acid, m-hydroxybenzoic acid, p-hydroxybenzoic acid, o-aminobenzoic acid, m-hydroxybenzoic acid and m-hydroxybenzoic acid.
-Aminobenzoic acid, p-aminobenzoic acid, o-nitrobenzoic acid, m-nitrobenzoic acid, p-nitrobenzoic acid, phthalic acid, isophthalic acid, terephthalic acid and the like are preferable, and o
-Hydroxybenzoic acid is more preferred.

The amount of the organic carboxylic acid compound used in the present invention is 0.1% based on the total amount of the resin component and the photoacid generator.
It is used in the range of 01 to 3% by weight, preferably 0.01 to 1.0% by weight. If the addition amount is 0.01% by weight or less, sensitivity and surface roughness deteriorate. On the other hand, if it exceeds 3% by weight, the film tends to be reduced, which is not preferable.

(D) Basic Compound The basic compound used in the present invention can be arbitrarily selected from those known and used for chemically amplified resists. For example, aliphatic amines, aromatic amines, heterocyclic amines and the like can be mentioned. Here, as the aliphatic amine, for example, methylamine, dimethylamine, trimethylamine, triethylamine, dicyclohexylamine, n-
Propylamine, isopropylamine and the like.
As aromatic amines, aniline, benzylamine, N, N-
Examples include dimethylaniline and diphenylamine.

Further, examples of the heterocyclic amine include pyridine, dimethylpyridine, 4-dimethylaminopyridine and the like. Of these, aliphatic amines such as triethylamine and dicyclohexylamine and heterocyclic amines such as 4-dimethylaminopyridine are preferred.

The amount of addition of these basic compounds depends on the resin component,
It is used in the range of 0.01 to 3% by weight, preferably 0.01 to 1.0% by weight, based on the total amount of the photoacid generator. If the addition amount is less than 0.01% by weight, the resolving power is deteriorated.
If the content exceeds% by weight, the sensitivity decreases, which is not preferable.

(B) Compounds that generate an acid upon irradiation with actinic rays or radiation (also referred to as photoacid generators) Photoacid generators include (1) a compound having a bissulfonyldiazomethane structure and (2) a sulfonium salt structure. It is indispensable to use the compound having the compound in combination in order to exhibit the effects of the present invention.

The compound (1) can be selected from known compounds used in chemically amplified resist compositions. Specifically, a photoacid generator represented by the following compounds can be used, but is not limited thereto.

[0034]

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The sulfonium salt compound (2) can be similarly selected from known compounds used in chemically amplified resist compositions, but is preferably a sulfonium salt represented by the following formula (II).

[0036]

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In the general formula (II), R ₂ , R ₃ and R ₄ each independently represent an aryl group or an aryl group having a substituent, and X ⁻ represents a counter anion. As the aryl group,
A phenyl group and a naphthyl group are preferred.

As the substituent, a methyl group, an ethyl group, n
-Propyl group, iso-propyl group, n-butyl group, i
a lower alkyl group such as a so-butyl group, a sec-butyl group, a t-butyl group, a branched or cyclic alkyl group having 5 to 16 carbon atoms, an alkoxy group having 1 to 4 carbon atoms, a fluorine atom, a chlorine atom, and a bromine atom And a halogen atom such as an iodine atom, a nitro group, an amino group, a carboxyl group, and a hydroxyl group, but are not limited thereto. X ^- as it is, A
Examples include sF ₆ ⁻ , BF ₄ ⁻ , SbF ₆ ⁻ , CF ₃ SO ₃ ⁻ , and p-toluenesulfonic acid anion, but are not limited thereto. Specifically, a photoacid generator represented by the following compounds can be used, but is not limited thereto.

[0039]

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The total amount of the two photoacid generators is in the range of 1 to 10% by weight, preferably 1 to 6% by weight, based on the resin component. Further, the compounding ratio of the photoacid generator having a bissulfonyldiazomethane structure and the photoacid generator having a sulfonium salt structure, which are essential requirements of the present invention, is based on the total content of the photoacid generator, It is 20 to 80% by weight of a diazomethane compound and 20 to 80% by weight of a sulfonium salt compound. Exceeding these proportions significantly degrades the LER and the graininess of the resist surface. If the above two photoacid generators are used in combination, known photoacid generators other than the above two photoacid generators can be further used together in an addition amount within a range in which the effects of the present invention can be exhibited.

The solvent (e) used in the present invention includes:
Cyclohexanone, cyclopentanone, 2-heptanone, γ-butyrolactone, methyl ethyl ketone, methyl isoamyl ketone, ethylene glycol, ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, 2-methoxyethyl acetate, ethylene glycol monoethyl ether acetate, propylene glycol monomethyl Ether, propylene glycol monomethyl ether acetate, toluene, ethyl acetate, methyl lactate, ethyl lactate, methyl methoxypropionate, ethyl ethoxypropionate, methyl pyruvate, ethyl pyruvate, propyl pyruvate, N, N-
Dimethylformamide, N, N-dimethylacetamide, dimethylsulfoxide, N-methylpyrrolidone, tetrahydrofuran and the like are preferred. These solvents can be used alone or in combination of two or more.

Among the above, preferred solvents are 2-
Heptanone, γ-butyrolactone, ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol monoethyl ether acetate, propylene glycol monomethyl ether, propylene glycol monomethyl ether acetate, methyl lactate, ethyl lactate, ethyl ethoxypropionate, N
-Methylpyrrolidone and the like.

The positive-type radiation-sensitive resin composition of the present invention may further contain a dye, a plasticizer, a surfactant, a photosensitizer and the like, if necessary.

The positive-type radiation-sensitive resin composition of the present invention contains a fluorine-based and / or silicon-based surfactant (fluorine-based surfactant, silicon-based surfactant and fluorine atom,
(A surfactant containing both silicon atoms).

Examples of these surfactants include JP-A-62-36663, JP-A-61-226746, JP-A-61-226745, and JP-A-62-170950.
JP-A-63-34540, JP-A-7-23016
5, JP-A-8-62834, JP-A-9-54432
And the surfactants described in JP-A-9-5988, and the following commercially available surfactants can be used as they are.

Examples of commercially available surfactants that can be used include, for example, F-Top EF301 and EF303 (manufactured by Shin-Akita Kasei Co., Ltd.), Florado FC430 and 431 (manufactured by Sumitomo 3M Limited), Megafac F171, F173, F176 and F189. , R08 (Dai Nippon Ink Co., Ltd.), Surflon S-382, SC101, 102, 103, 10
4, 105 and 106 (manufactured by Asahi Glass Co., Ltd.) and Troisol S-366 (manufactured by Troy Chemical Co., Ltd.). Also, polysiloxane polymer KP-341 (manufactured by Shin-Etsu Chemical Co., Ltd.) can be used as a silicon-based surfactant.

The amount of the surfactant is usually from 0.01% by weight to 100% by weight of the solid content in the composition of the present invention.
It is 2% by weight, preferably 0.01% to 1% by weight. These surfactants can be used alone or in combination of two or more.

A surfactant other than the above-mentioned fluorine-based and / or silicon-based surfactants can be added. Specifically, polyoxyethylene alkyl ethers such as polyoxyethylene laurel ether, polyoxyethylene stearyl ether, polyoxyethylene cetyl ether, and polyoxyethylene oleyl ether; polyoxyethylene octyl phenol ether; polyoxyethylene nonyl phenol ether; Polyoxyethylene alkyl aryl ethers, polyoxyethylene / polyoxypropylene block copolymers, sorbitan monolaurate, sorbitan monopalmitate, sorbitan monostearate, sorbitan monooleate, sorbitan trioleate, sorbitan tristearate, etc. Sorbitan fatty acid esters, polyoxyethylene sorbitan monolaurate, polyoxyethylene sorbitan mono Rumiteto, polyoxyethylene sorbitan monostearate, may be mentioned polyoxyethylene sorbitan trioleate, polyoxyethylene sorbitan fatty acid esters such as polyoxyethylene sorbitan tristearate, etc. The nonionic surface active agent.

The amount of these surfactants is usually 2% by weight based on 100% by weight of the solids in the composition of the present invention.
Or less, preferably 1% by weight or less. These surfactants may be added alone or in some combination.

The above composition is applied on a substrate (eg, silicon / silicon dioxide coating) which is used in the manufacture of precision integrated circuit devices by an appropriate application method such as a spinner or a coater, and then pre-baked. By exposing through a mask, performing post-baking and developing, a good resist pattern can be obtained. Here, the exposure light is preferably far ultraviolet light having a wavelength of 250 nm or less. Specifically, a KrF excimer laser (248 nm), Ar
Examples include an F excimer laser (193 nm), an F2 excimer laser (157 nm), X-rays, and an electron beam.

Examples of the developer for the positive-type radiation-sensitive resin composition of the present invention include inorganic alkalis such as sodium hydroxide, potassium hydroxide, sodium carbonate, sodium silicate, sodium metasilicate and aqueous ammonia, ethylamine, and the like.
Primary amines such as n-propylamine, secondary amines such as diethylamine and di-n-butylamine, tertiary amines such as triethylamine and methyldiethylamine, alcohol amines such as dimethylethanolamine and triethanolamine, and tetraamines Quaternary ammonium salts such as methylammonium hydroxide and tetraethylammonium hydroxide, and alkaline aqueous solutions such as cyclic amines such as pyrrole and piperidine can be used. Further, an appropriate amount of an alcohol, a surfactant or the like may be added to the above alkaline aqueous solution.

[0052]

EXAMPLES The present invention will now be described in detail with reference to examples, but the scope of the present invention is not at all limited by the examples.

Synthesis Example 1 Polyhydroxystyrene (VP-15000 manufactured by Nippon Soda) 120
g of N, N-dimethylacetamide in 700 g of di-tert-butyl-di-carbonate.
g, stirred and dissolved, and 60 g of triethylamine was added dropwise over about 15 minutes. After stirring was continued for about 3 hours after the completion of the dropping, the reaction solution was dropped into 20 L of ultrapure water with vigorous stirring to obtain a white powdery polymer. Further, it was washed with ultrapure water, filtered and dried to obtain polyhydroxystyrene (p-1) in which 25 mol% of hydroxyl groups were substituted with tert-butoxycarbonyloxy groups.

Synthesis Example 2 The amount of di-tert-butyl-di-carbonate added was 76.
The same procedure as in Synthesis Example 1 was carried out except that the amount was changed to 5 g.
5% by mole of polyhydroxystyrene (p-2) substituted with a tert-butoxycarbonyloxy group was obtained.

Synthesis Example 3 Polyhydroxystyrene (weight average molecular weight: 20,000) 120
was dissolved in 700 g of N, N-dimethylacetamide, 27.0 g of 1-chloro-1-ethoxyethane was added to the solution, and the mixture was stirred and dissolved.
It was added dropwise over 0 minutes. After stirring was continued for about 3 hours after the completion of the dropping, the reaction solution was dropped into 20 L of ultrapure water with vigorous stirring to obtain a white powdery polymer. Further, the polymer was washed with ultrapure water, filtered, dried, and polyhydroxystyrene in which 25 mol% of hydroxyl groups were substituted with 1-ethoxyethoxy group (p-
3) was obtained.

Synthesis Example 4 17.2 g of 1-chloro-1-ethoxyethane was added.
Except that the hydroxyl group was changed to 35.
Polyhydroxystyrene (p-4) in which mol% was substituted with a 1-ethoxyethoxy group was obtained.

Examples 1 to 12 and Comparative Examples 1 to 8 (Preparation and Evaluation of Radiation-Sensitive Resin Composition) 8 g of PGMEA (propylene glycol methyl ether acetate) was used for each material shown in Table 1 (Examples) and Comparative Examples below. Dissolved in
The solution was filtered through a 0.1 μm filter to prepare a resin composition solution.

This resin composition solution was uniformly applied to a hexamethyldisilazane-treated silicon wafer using a spin coater, and dried at 90 ° C. for 90 seconds to form a resist film having a thickness of 0.4 μm. Obtained. A KrF excimer laser stepper (NA = 0.
Using 63), pattern exposure was performed using a line and space mask, and immediately after exposure, the film was heated on a hot plate at 120 ° C. for 90 seconds. Further, paddle development was performed with a 2.38% aqueous solution of tetramethylammonium hydroxide at 23 ° C. for 60 seconds, followed by washing and drying for 30 seconds to form a resist pattern. Here, the obtained pattern was observed with a scanning electron microscope, and the performance of the resist was evaluated as described below. Table 2 shows the results.

The sensitivity was determined by the minimum exposure energy (minimum exposure amount) at which a 0.26 μm line and space pattern on the mask gave a 0.26 μm line pattern.

The resolving power is shown by the limit resolving power that can be resolved with the minimum exposure amount. Line edge roughness (LER)
Was evaluated by observing the unevenness of the side wall of the 0.25 μm line pattern from the top of the pattern with a scanning electron microscope, measuring the deviation of the unevenness of the side wall from the linear portion, and evaluating the average value.

Regarding the surface roughness, the surface of the large pattern was observed with a scanning electron microscope. When no particle-like foreign matter was observed on the surface, it was evaluated as ○. A sample in which a foreign substance was observed was rated as x.

[0062]

[Table 1]

[0063]

[Table 2]

[0064]

According to the present invention, there is provided a chemically amplified positive resist composition having high resolution, high sensitivity, excellent line edge roughness, and improved surface roughness. Therefore, the positive radiation-sensitive resin composition of the present invention can be suitably used for manufacturing semiconductor integrated circuit elements, integrated circuit manufacturing masks, printed wiring boards, liquid crystal panels, and the like.

──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI Theme coat ゛ (Reference) G03F 7/004 503 G03F 7/004 503A H01L 21/027 H01L 21/30 502R F-term (Reference) 2H025 AA01 AA02 AA03 AA18 AB15 AB16 AB17 AC04 AC08 AD03 BE00 BE07 BE10 BF15 CB17 CB28 CB45 CC03 CC20 FA12 FA17 4J002 BC12W BC12X EF037 EF047 EF097 EF117 EN028 EN038 EN048 EN068 ET006 EU048 EV216 EV296 FD310 GQ00

Claims (2)

[Claims] (1) a resin having a group which is decomposed by the action of an acid to increase solubility in an alkali developer; (b) a compound which generates an acid upon irradiation with actinic rays or radiation; (c) an organic carboxylic acid In a positive radiation-sensitive resin composition comprising at least a compound (d) a basic compound (e) a solvent, the component (a) is (1) 5 to 50 mol% of the phenolic hydroxyl group is tert- Polyhydroxystyrene substituted with a butoxycarbonyloxy group and (2)
5 to 50 mol% of the phenolic hydroxyl group is a mixture with polyhydroxystyrene substituted with an acetal group represented by the general formula (I), and the component (b) is (1) a compound having a bissulfonyldiazomethane structure; (2) A positive-type radiation-sensitive resin composition, which is a mixture with a compound having a sulfonium salt structure. Embedded image (Wherein R ₁ is a lower alkyl group having 1 to 4 carbon atoms) 2. The composition according to claim 1, wherein the component (b) comprises 20 to 80% by weight of the compound (1) based on the total content of the component (b).
The positive radiation-sensitive resin composition according to claim 1, wherein the compound of (2) is 20 to 80% by weight based on the total content of the component (b).