JPH09218186A - Ultrasonic probe - Google Patents

Ultrasonic probe

Info

Publication number
JPH09218186A
JPH09218186A JP2422796A JP2422796A JPH09218186A JP H09218186 A JPH09218186 A JP H09218186A JP 2422796 A JP2422796 A JP 2422796A JP 2422796 A JP2422796 A JP 2422796A JP H09218186 A JPH09218186 A JP H09218186A
Authority
JP
Japan
Prior art keywords
damper material
piezoelectric element
ultrasonic waves
damper
sound absorbing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2422796A
Other languages
Japanese (ja)
Inventor
Hiroshi Yamamoto
弘 山本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Construction Machinery Co Ltd
Original Assignee
Hitachi Construction Machinery Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Construction Machinery Co Ltd filed Critical Hitachi Construction Machinery Co Ltd
Priority to JP2422796A priority Critical patent/JPH09218186A/en
Publication of JPH09218186A publication Critical patent/JPH09218186A/en
Pending legal-status Critical Current

Links

Abstract

PROBLEM TO BE SOLVED: To easily reduce the reflected wave from a damper material to a piezoelectric element by providing grooves for scattering ultrasonic waves on the end surface and side surface of the damper material on the piezoelectric element back surface side of an ultrasonic probe. SOLUTION: A piezoelectric element 1, which is manufactured into a plate by use of a piezoelectric ceramic or piezoelectric thin film, generates ultrasonic waves by voltage application. A damper material 2, which is situated on the back surface of the element 1, suppresses the vibration of the element 1 after voltage application by use of metal lead and influences the depth resolution of the probe. A sound absorbing material 3, which is manufactured by mixing heavy metal (tungsten or the like) to a resin, absorbs the ultrasonic waves transmitted by the damper material 2. To connect the element 1 to the damper material 2, a low temperature connection free from adhesive layer is adapted in order to improve the depth resolution, and grooves are formed on the end surface and side surface opposite to the element 1 of the damper material 2 to scatter the ultrasonic waves. Further, the sound absorbing material 3 is buried in the grooves.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【発明の属する技術分野】本発明は、超音波探傷装置の
センサとして用いられる超音波探触子に係り、特に圧電
素子の背面側に配置されるダンパ材(バッキング材)か
らの反射波を低減する構造の超音波探触子に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an ultrasonic probe used as a sensor of an ultrasonic flaw detector, and particularly to reducing reflected waves from a damper material (backing material) arranged on the back side of a piezoelectric element. The present invention relates to an ultrasonic probe having a structure.

【0002】[0002]

【従来の技術】従来の超音波探触子においては、例えば
特開平2−264643号公報などに記載のように、圧
電素子とダンパ材(バッキング材)との間に反射波防止
用音響整合層を設けて、ダンパ材から圧電素子への反射
波を低減する構造となっていた。
2. Description of the Related Art In a conventional ultrasonic probe, an acoustic matching layer for preventing reflected waves is provided between a piezoelectric element and a damper material (backing material) as described in, for example, Japanese Patent Laid-Open No. 2-264643. Is provided to reduce the reflected wave from the damper material to the piezoelectric element.

【0003】[0003]

【発明が解決しようとする課題】上記従来技術の超音波
探触子における反射波防止用音響整合層の音響インピー
ダンスは、圧電素子及びダンパ材(バッキング材)の音
響インピーダンスと特定の関係にある必要があるため、
その音響インピーダンスの調整が困難であり、また反射
波防止用音響整合層の厚さも発生超音波の波長λのλ/
4に等しくなければならず、その製作も容易ではない問
題があった。
The acoustic impedance of the acoustic matching layer for preventing reflected waves in the ultrasonic probe of the above-mentioned prior art needs to have a specific relationship with the acoustic impedance of the piezoelectric element and the damper material (backing material). Because there is
It is difficult to adjust the acoustic impedance, and the thickness of the acoustic matching layer for preventing reflected waves is λ of the wavelength λ of the generated ultrasonic waves.
It must be equal to 4, and its production is not easy.

【0004】本発明の目的は、上記従来技術の調整及び
精密工作を行うことなく、容易にダンパ材から圧電素子
への反射波を低減する構造の超音波探触子を提供するこ
とにある。
An object of the present invention is to provide an ultrasonic probe having a structure that easily reduces the reflected wave from the damper material to the piezoelectric element without performing the adjustment and precision machining of the above-mentioned prior art.

【0005】[0005]

【課題を解決するための手段】本発明は、超音波探触子
の圧電素子背面側のダンパ材の端面及び側面に、超音波
を散乱させる溝を設ける。また本発明は、上記ダンパ材
の溝に、超音波を吸収する吸音材を設ける。
According to the present invention, grooves for scattering ultrasonic waves are provided on the end surface and the side surface of the damper material on the piezoelectric element rear side of the ultrasonic probe. In the present invention, a sound absorbing material that absorbs ultrasonic waves is provided in the groove of the damper material.

【0006】[0006]

【発明の実施の形態】以下に本発明の実施の形態を図1
から図4により説明する。図1は本発明の超音波探触子
の一実施の形態を示す縦断面図である。図1において、
1は圧電素子で電圧印加により超音波を発生し、圧電セ
ラミック(PbTiO3など)や圧電薄膜(ZnOな
ど)より板状に製作される。2はダンパ材(バッキング
材)で圧電素子1の背面に位置し、圧電素子1の電圧印
加後の振動を抑え、金属鉛などを使用し、探触子の深度
分解能に影響を及ぼす。3は吸音材でダンパ材2より透
過してきた超音波を吸収し、樹脂に重金属(タングステ
ンなど)を混入して製作される。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to FIG.
4 will be described with reference to FIG. FIG. 1 is a longitudinal sectional view showing an embodiment of the ultrasonic probe of the present invention. In FIG.
Reference numeral 1 is a piezoelectric element that generates ultrasonic waves by applying a voltage, and is manufactured in a plate shape from a piezoelectric ceramic (PbTiO 3 or the like) or a piezoelectric thin film (ZnO or the like). A damper material (backing material) 2 is located on the back surface of the piezoelectric element 1, suppresses vibration of the piezoelectric element 1 after a voltage is applied, and uses metallic lead or the like to affect the depth resolution of the probe. A sound absorbing material 3 absorbs ultrasonic waves transmitted from the damper material 2 and is manufactured by mixing a heavy metal (such as tungsten) into the resin.

【0007】上記探触子の圧電素子1とダンパ材2は、
その深度分解能向上のために接着層のない低温接合を行
っている。そのダンパ材2の圧電素子1とは反対側の端
面及び側面には溝を切って超音波を散乱させる。さらに
その溝の中には吸音材3を埋め込んで構成しており、こ
の吸音材3として樹脂に重金属(タングステンなど)を
混入して製作したもので、その音響インピーダンスとし
ては14(×106kg/(m2・s))程度まで製作可
能である。
The piezoelectric element 1 and the damper material 2 of the probe are
In order to improve the depth resolution, low temperature bonding without adhesive layer is performed. A groove is cut in the end surface and the side surface of the damper material 2 opposite to the piezoelectric element 1 to scatter ultrasonic waves. Further, a sound absorbing material 3 is embedded in the groove, and the sound absorbing material 3 is manufactured by mixing a heavy metal (tungsten or the like) into a resin and has an acoustic impedance of 14 (× 10 6 kg It is possible to manufacture up to about / (m 2 · s).

【0008】図2は図1の圧電素子1の超音波の指向特
性図である。図2に示すように、図1の圧電素子1に図
示していない電源からパルス電圧が印加されると、圧電
素子1の被検体側と同様に裏側のダンパ材2の厚み方向
において、超音波の縦波のほかに横波及び表面波が発生
する。
FIG. 2 is a directivity characteristic diagram of ultrasonic waves of the piezoelectric element 1 of FIG. As shown in FIG. 2, when a pulse voltage is applied to the piezoelectric element 1 of FIG. 1 from a power source (not shown), ultrasonic waves are applied in the thickness direction of the damper material 2 on the back side as well as the subject side of the piezoelectric element 1. In addition to the longitudinal wave, a transverse wave and a surface wave are generated.

【0009】そこで図2の超音波の縦波は指向角の関係
から、図1の主としてダンパ材2の端面の溝によって散
乱されて更に吸音材3により吸収される。さらに図2の
超音波の表面波及び横波は指向角の関係から、図1のダ
ンパ材2の側面の溝によって散乱されて更に吸音材3に
より吸収されることになる。
Therefore, the longitudinal wave of the ultrasonic wave of FIG. 2 is scattered mainly by the groove of the end surface of the damper material 2 of FIG. 1 and further absorbed by the sound absorbing material 3 due to the relationship of the directivity angle. Further, the surface wave and the transverse wave of the ultrasonic wave in FIG. 2 are scattered by the groove on the side surface of the damper material 2 in FIG. 1 and further absorbed by the sound absorbing material 3 due to the relationship of the directivity angle.

【0010】図3は図1のダンパ材2の側面部分縦断面
図である。図3に示すように、図1の圧電素子1により
ダンパ材2の側に発生した図2の超音波の表面波及び横
波は図3のダンパ材2の側面の溝のA部において実践矢
印で示すように反射及び透過する。ここでの反射波の反
射率γは次式の値となる。
FIG. 3 is a side sectional view of the damper member 2 shown in FIG. As shown in FIG. 3, the surface wave and the transverse wave of the ultrasonic wave of FIG. 2 generated on the side of the damper material 2 by the piezoelectric element 1 of FIG. 1 are indicated by a practical arrow in the portion A of the groove on the side surface of the damper material 2 of FIG. It is reflected and transmitted as shown. The reflectance γ of the reflected wave here is the value of the following equation.

【数1】 γ=(14−22)/(22+14)≒−0.222 ここで、負符号は位相の反転を示し、14(×106
g/(m2・s))は吸音材3の音響インピーダンス、
22(×106kg/(m2・s))はダンパ材(鉛)2
の音響インピーダンスである。さらにB部においても同
様に反射及び透過が行われ、ここでの反射波の累積反射
率はγ2=0.049(0.02222)のように小さな
値になっていく。なおダンパ材(鉛)2の中での超音波
の表面波及び横波の減衰も累積されるため、図1の圧電
素子1のダンパ材2側で受信される超音波の表面波及び
横波の信号は更に低減される。
Γ = (14−22) / (22 + 14) ≈−0.222 where the negative sign indicates phase inversion, and 14 (× 10 6 k
g / (m 2 · s)) is the acoustic impedance of the sound absorbing material 3,
22 (× 10 6 kg / (m 2 · s)) is a damper material (lead) 2
Is the acoustic impedance of. Further, reflection and transmission are similarly performed in the B section, and the cumulative reflectance of the reflected wave here becomes a small value such as γ 2 = 0.049 (0.0222 2 ). Since the attenuation of the surface wave and the transverse wave of the ultrasonic wave in the damper material (lead) 2 is also accumulated, the signal of the surface wave and the transverse wave of the ultrasonic wave received by the damper material 2 side of the piezoelectric element 1 of FIG. Is further reduced.

【0011】図4(a)、(b)は図1のダンパ材側面
からの反射波の有無による圧電素子1の受信特性比較図
である。図4(a)、(b)において、図1、3のダン
パ材2の側面の溝及び吸音材5がない場合には、図4
(a)に示すように送信波Tの受信電圧に対するダンパ
材側面からの反射波の受信電圧が時間軸上に測定され
て、これが、高ゲインでの探傷ではノイズとなるため探
傷結果に影響を及ぼす。これに対して、図1、3のダン
パ材2の側面の溝及び吸音材3がある場合には、図4
(b)に示すように送信波Tの受信電圧に対するダンパ
材側面からの反射波の受信電圧が低減されて時間軸上に
測定されず、これにより高ゲインでの探傷結果の向上を
図ることができる。
FIGS. 4 (a) and 4 (b) are comparison charts of the reception characteristics of the piezoelectric element 1 depending on the presence or absence of the reflected wave from the side surface of the damper material of FIG. 4A and 4B, when there is no groove on the side surface of the damper material 2 and the sound absorbing material 5 in FIGS.
As shown in (a), the received voltage of the reflected wave from the side surface of the damper material with respect to the received voltage of the transmitted wave T is measured on the time axis, and this causes noise in flaw detection with high gain, which affects the flaw detection result. Exert. On the other hand, when there is a groove on the side surface of the damper material 2 and the sound absorbing material 3 in FIGS.
As shown in (b), the received voltage of the reflected wave from the side surface of the damper material with respect to the received voltage of the transmitted wave T is reduced and is not measured on the time axis, which can improve the flaw detection result with high gain. it can.

【0012】[0012]

【発明の効果】本発明によれば、超音波探触子の圧電素
子背面のダンパ材(バッキング材)の端面及び側面から
の反射波を著しく低減してエコーノイズを抑制すること
が可能となるので、探傷時の分解能に影響を与える因子
を抑制することができる結果、解像度の高い探傷測定が
可能となる効果がある。
According to the present invention, it is possible to remarkably reduce the reflected waves from the end surface and the side surface of the damper material (backing material) on the back surface of the piezoelectric element of the ultrasonic probe and suppress the echo noise. Therefore, as a result of suppressing factors that affect the resolution during flaw detection, it is possible to perform flaw detection measurement with high resolution.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の超音波探触子の一実施の形態を示す縦
断面図である。
FIG. 1 is a vertical cross-sectional view showing an embodiment of an ultrasonic probe of the present invention.

【図2】図1の圧電素子の超音波の指向特性図である。FIG. 2 is a directional characteristic diagram of ultrasonic waves of the piezoelectric element of FIG.

【図3】図1のダンパ材の側面部分縦断面図である。FIG. 3 is a side elevational partial cross-sectional view of the damper member of FIG.

【図4】(a)、(b)は図1のダンパ材側面からの反
射波の有無による受信特性比較図である。
4 (a) and 4 (b) are reception characteristic comparison diagrams depending on the presence or absence of a reflected wave from the side surface of the damper material of FIG.

【符号の説明】[Explanation of symbols]

1 圧電素子 2 ダンパ材 3 吸音材 1 Piezoelectric element 2 Damper material 3 Sound absorbing material

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】 圧電素子と該圧電素子の背面側にダンパ
材を有して被検体に超音波を送受する超音波探触子にお
いて、上記ダンパ材の端面及び側面に超音波を散乱させ
る溝を設けた超音波探触子。
1. An ultrasonic probe having a piezoelectric element and a damper material on the back side of the piezoelectric element for transmitting and receiving ultrasonic waves to and from a subject, wherein grooves for scattering the ultrasonic waves are provided on the end surface and the side surface of the damper material. An ultrasonic probe equipped with.
【請求項2】 上記ダンパ材の溝に超音波を吸収する吸
音材を設けた請求項1記載の超音波探触子。
2. The ultrasonic probe according to claim 1, wherein a sound absorbing material that absorbs ultrasonic waves is provided in the groove of the damper material.
JP2422796A 1996-02-09 1996-02-09 Ultrasonic probe Pending JPH09218186A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2422796A JPH09218186A (en) 1996-02-09 1996-02-09 Ultrasonic probe

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2422796A JPH09218186A (en) 1996-02-09 1996-02-09 Ultrasonic probe

Publications (1)

Publication Number Publication Date
JPH09218186A true JPH09218186A (en) 1997-08-19

Family

ID=12132390

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2422796A Pending JPH09218186A (en) 1996-02-09 1996-02-09 Ultrasonic probe

Country Status (1)

Country Link
JP (1) JPH09218186A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104226576A (en) * 2013-06-18 2014-12-24 柯宜京 Back lining structural system for thickness mode vibration ultrasonic transducer

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104226576A (en) * 2013-06-18 2014-12-24 柯宜京 Back lining structural system for thickness mode vibration ultrasonic transducer

Similar Documents

Publication Publication Date Title
US6307302B1 (en) Ultrasonic transducer having impedance matching layer
US7373840B2 (en) Ultrasonic flowmeter having a transmitting body fixed on the outer peripheral surface of the pipe
US5088327A (en) Phase cancellation enhancement of ultrasonic evaluation of metal-to-elastomer bonding
JP3501100B2 (en) Ultrasonic transducer
GB2063007A (en) Ultrasonic transducer
JP2000032594A (en) Ultrasonic wave transmitter-receiver
JP3672565B2 (en) Small section vascular ultrasound imaging transducer
CN206020343U (en) Ultrasonic probe gong type chip and the probe using ultrasonic probe gong type chip
US20160142822A1 (en) Electroacoustic transducer
JPH09218186A (en) Ultrasonic probe
JP4187993B2 (en) Ultrasonic probe
JPH08275944A (en) Arrangement type ultrasonic probe
JPS6133518B2 (en)
JPH0448039B2 (en)
KR101558921B1 (en) Dual type ultrasonic sensor for adjusting focal length
JP3477270B2 (en) Ultrasonic transducer
JP2804561B2 (en) Ultrasonic probe
KR101558922B1 (en) Dual type ultrasonic sensor for adjusting beam width
US20060006765A1 (en) Apparatus and method to transmit and receive acoustic wave energy
US20240036181A1 (en) Ultrasonic transducer for a measuring device
JPH05248935A (en) Ultrasonic sensor
JPH11316216A (en) Ultrasonic probe
JP2000253494A (en) Piezoelectric element for ultrasonic sensor
JPS6199859A (en) Ultrasonic probe
JPH07274291A (en) Ultrasonic probe and its manufacture