JPH09213586A - Aluminum foil for electrode of electrolytic capacitor - Google Patents

Aluminum foil for electrode of electrolytic capacitor

Info

Publication number
JPH09213586A
JPH09213586A JP2005396A JP2005396A JPH09213586A JP H09213586 A JPH09213586 A JP H09213586A JP 2005396 A JP2005396 A JP 2005396A JP 2005396 A JP2005396 A JP 2005396A JP H09213586 A JPH09213586 A JP H09213586A
Authority
JP
Japan
Prior art keywords
ppm
aluminum foil
etching
electrolytic capacitor
foil
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2005396A
Other languages
Japanese (ja)
Inventor
Ichizo Tsukuda
市三 佃
Tadao Fujihira
忠雄 藤平
Kiyoshi Tada
清志 多田
Tomoaki Yamanoi
智明 山ノ井
Kurata Awaya
庫太 粟屋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Showa Aluminum Can Corp
Original Assignee
Showa Aluminum Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Showa Aluminum Corp filed Critical Showa Aluminum Corp
Priority to JP2005396A priority Critical patent/JPH09213586A/en
Publication of JPH09213586A publication Critical patent/JPH09213586A/en
Pending legal-status Critical Current

Links

Landscapes

  • Metal Rolling (AREA)

Abstract

PROBLEM TO BE SOLVED: To provide an aluminum foil for electrode of electrolytic capacitor by means of which the capacitance can be increased. SOLUTION: The aluminum foil has aluminum purity of 99.9% or above and contains 15-300ppm of Ag. In addition to Ag, it may contain one kind or more of 0.1-5ppm of Pb, 1-50ppm of Zn, 1-50ppm of Ga, 5-60ppm of Fe, 5-80ppm of Si.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【発明の属する技術分野】この発明は、電解コンデンサ
電極用アルミニウム箔に関する。
The present invention relates to an aluminum foil for an electrode of an electrolytic capacitor.

【0002】[0002]

【従来の技術】アルミニウム電解コンデンサ用電極材と
して一般に用いられるAl箔には、その実効面積を拡大
して単位面積当たりの静電容量を増大するため、通常、
電気化学的あるいは化学的エッチング処理が施される。
2. Description of the Related Art An Al foil generally used as an electrode material for an aluminum electrolytic capacitor usually has a large effective area to increase the capacitance per unit area.
An electrochemical or chemical etching process is performed.

【0003】しかし、箔を単にエッチング処理するのみ
では十分な静電容量が得られない。このため、一般的に
は箔圧延後の最終焼鈍工程において、立方体方位を多く
有する集合組織にして箔のエッチング特性を向上させる
べく、450℃程度以上の高温加熱処理が施されてい
る。また近年では、Al箔の0.1μmまでの表層に、
エッチピット発生の核としてPbを濃化させることも行
われている(特公昭62−42370号)。
[0003] However, a sufficient capacitance cannot be obtained simply by etching the foil. For this reason, generally, in the final annealing step after foil rolling, a high temperature heat treatment of about 450 ° C. or higher is performed in order to improve the etching characteristics of the foil by forming a texture having many cubic orientations. In recent years, on the surface layer of Al foil up to 0.1 μm,
Concentration of Pb has also been performed as a nucleus of etch pit generation (Japanese Patent Publication No. 62-42370).

【0004】[0004]

【発明が解決しようとする課題】しかし、前述のPb濃
化層を設けたAl箔についてエッチピットの発生状況に
ついて克明に解析したところ、エッチピットの発生は、
まだまだまばらで不均一なものであり、昨今の電解コン
デンサの高静電容量化の要求に対して十分な満足を得る
ものではなかった。
However, when the above-mentioned Al foil provided with the Pb-enriched layer was analyzed in detail about the occurrence of etch pits, the occurrence of etch pits was found to be
It is still sparse and non-uniform, and it has not been sufficiently satisfied with the recent demand for higher capacitance of electrolytic capacitors.

【0005】この発明は、かかる技術的背景に鑑みてな
されたものであって、静電容量を増大し得る電解コンデ
ンサ電極用アルミニウム箔の提供を目的とする。
The present invention has been made in view of the above technical background, and an object of the present invention is to provide an aluminum foil for an electrolytic capacitor electrode capable of increasing electrostatic capacitance.

【0006】[0006]

【課題を解決するための手段】上記目的を達成するため
に、発明者は鋭意研究の結果、アルミニウム箔組成にA
gを添加し、さらに各種微量元素を添加することで、エ
ッチングによる拡面率を増大させ、高静電容量箔が得ら
れることを見出した。
In order to achieve the above object, the inventors of the present invention have conducted extensive studies and found that the aluminum foil composition was
It was found that by adding g and further various trace elements, the surface area ratio by etching is increased, and a high capacitance foil can be obtained.

【0007】この発明は、かかる知見に基いてなされた
ものであって、アルミニウム純度が99.9%以上で、
Ag:15〜300ppmを含有すること、あるいはさ
らにPb:0.1〜5ppm、Zn:1〜50ppm、
Ga:1〜50ppm、Fe:5〜60ppm、Si:
5〜80ppmのうちの1種以上を含有することを要旨
とする。
The present invention has been made on the basis of such findings, and has an aluminum purity of 99.9% or more,
Ag: 15 to 300 ppm, or Pb: 0.1 to 5 ppm, Zn: 1 to 50 ppm,
Ga: 1 to 50 ppm, Fe: 5 to 60 ppm, Si:
The gist is to contain at least one of 5 to 80 ppm.

【0008】この発明に係るアルミニウム箔のアルミニ
ウム純度に99.9%以上を必要とするのは、99.9
%未満の純度では、エッチング時にエッチングピットの
成長が多くの不純物の存在によって阻害され、本発明範
囲のAgの存在によってもなお均一な深いトンネル状の
エッチングピットを形成できず、従って静電容量の高い
アルミニウム箔を得ることができないからである。好ま
しくはアルミニウム純度を99.95%以上とするのが
良い。
The reason why the aluminum purity of the aluminum foil according to the present invention is required to be 99.9% or more is 99.9%.
If the purity is less than%, the growth of etching pits is hindered by the presence of many impurities during etching, and even the presence of Ag within the scope of the present invention makes it impossible to form uniform deep tunnel-shaped etching pits, and therefore the capacitance of This is because a high aluminum foil cannot be obtained. Preferably, the aluminum purity is 99.95% or more.

【0009】アルミニウム箔中のAgは、エッチング時
にピットを高密度かつ均一に分布させるために必要な元
素である。即ち、一般にエッチング初期には箔表面に存
在する表面の凹凸や油、ロールコーティングなどの付着
物、あるいはそれらが変質したものから発生する不均一
な局部溶解ピットが発生し、エッチングピット密度の不
均一性(疎・密)を生じ、著しい場合には表面がクレー
ター状に溶解する。この不均一性はエッチング終了後も
残り、静電容量低下の原因となっている。そこで、この
ような不具合点を防止するために、これら表面に存在す
るエッチングピットの不均一要因を制御する試みが行わ
れているが、発明者らは、この点について鋭意研究の結
果、Agがエッチングピットの局部性をなくすととも
に、高密度に形成させる効果を有することを知見した。
Ag含有量が15ppm未満ではこのような効果が乏し
いが、300ppmを越えると最終焼鈍後の(100)
結晶面の占有率が低下するため、高静電容量箔を得るこ
とができない。なお、(100)結晶面の占有率が95
%以上であるとき静電容量の増大を図ることができる
が、Ag含有量が上記範囲内であれば95%以上を達成
できる。そこで、Ag含有量は、15〜300ppmと
する必要がある。Ag含有量の好ましい下限値は50p
pm、好ましい上限値は200ppmである。
Ag in the aluminum foil is an element necessary for uniformly distributing pits at a high density during etching. That is, generally, in the initial stage of etching, uneven unevenness of the surface existing on the foil surface, oil, deposits such as roll coating, or those that have been altered cause uneven local dissolution pits, resulting in uneven etching pit density. The property (sparse / dense) occurs, and in the remarkable case, the surface melts like a crater. This non-uniformity remains even after the end of the etching, causing a decrease in capacitance. Therefore, in order to prevent such a problem, attempts have been made to control the non-uniformity factor of the etching pits existing on these surfaces. It has been found that it has the effect of eliminating the locality of the etching pit and forming it at a high density.
If the Ag content is less than 15 ppm, such effect is poor, but if it exceeds 300 ppm, (100) after the final annealing.
Since the occupancy of the crystal plane is reduced, it is not possible to obtain a high capacitance foil. The occupation ratio of the (100) crystal plane is 95
When it is at least%, the capacitance can be increased, but if the Ag content is within the above range, it can be at least 95%. Therefore, the Ag content needs to be 15 to 300 ppm. The preferred lower limit of Ag content is 50 p
pm, the preferred upper limit is 200 ppm.

【0010】また、請求項2の電解コンデンサ電極用ア
ルミニウム箔において、微量元素Pb、Zn、Ga、F
e、Siは、下記に詳述するようにそれぞれに箔のエッ
チング特性の向上に寄与する。これらの元素は1種以上
の存在により、上述のAgとともに相乗的に静電容量の
増大を図ることができる。なお、これらの微量元素はそ
れぞれ単独で添加しても良いし、また任意の2種以上を
添加しても良く、それぞれの作用に応じた相乗的効果が
得られる。
Further, in the aluminum foil for electrolytic capacitor electrodes according to claim 2, trace elements Pb, Zn, Ga and F are contained.
e and Si contribute to the improvement of the etching characteristics of the foil, respectively, as described in detail below. The presence of one or more of these elements can synergistically increase the capacitance together with the above-described Ag. In addition, these trace elements may be added individually, or may be added in any two or more kinds, and a synergistic effect corresponding to each action can be obtained.

【0011】Pbはエッチング初期の局部溶解性を抑止
して、エッチピットの均一分布に寄与する。Pb含有量
は0.1ppmでは前記効果に乏しく、5ppmを越え
ると表面溶解が生じるおそれがある。そのため、Pb含
有量は0.1〜5ppmとする必要があり、好ましい下
限値は0.3ppm、好ましい上限値は2ppmであ
る。また、エッチング初期に効果を発揮する元素である
から、箔の表層部に高濃度に存在していることが好まし
い。
Pb suppresses local solubility in the initial stage of etching and contributes to uniform distribution of etch pits. If the Pb content is 0.1 ppm, the above effect is poor, and if it exceeds 5 ppm, surface dissolution may occur. Therefore, the Pb content needs to be 0.1 to 5 ppm, the preferable lower limit value is 0.3 ppm, and the preferable upper limit value is 2 ppm. Further, since it is an element that exerts an effect in the initial stage of etching, it is preferable that it is present at a high concentration in the surface layer portion of the foil.

【0012】Znは、Alマトリックス中に固溶するこ
とにより、箔の溶解性を増してエッチングピットの成長
を促進し、静電容量を増大させる。Zn含有量は1pp
m未満では前記効果が乏しく、一方50ppmを越える
と局部溶解性が強まって、エッチピットの均一分布を妨
げる。そのため、Zn含有量は、1〜50ppmが好ま
しく、特に好ましい下限値は8ppm、特に好ましい上
限値は20ppmである。
When Zn forms a solid solution in the Al matrix, it increases the solubility of the foil, promotes the growth of etching pits, and increases the capacitance. Zn content is 1pp
If it is less than m, the above effect is poor, while if it exceeds 50 ppm, the local solubility is strengthened to prevent the uniform distribution of the etch pits. Therefore, the Zn content is preferably 1 to 50 ppm, the particularly preferable lower limit value is 8 ppm, and the particularly preferable upper limit value is 20 ppm.

【0013】Gaは、結晶粒界または亜粒界に偏析しや
すく、単独ではエッチピットの不均一分布をもたらす元
素であるが、Agが亜粒界のサイズを細かくするため、
Ag存在下ではエッチピットの均一分散性を高める効果
がある。Ga含有量は、1ppm未満では前記効果に乏
しく、一方50ppmを越えると局部溶解性が強まり、
エッチピットの均一分布を妨げる。そのため、Ga含有
量は1〜50ppmが好ましく、特に好ましい下限値は
8ppm、特に好ましい上限値は20ppmである。
Ga is an element which easily segregates at the crystal grain boundaries or sub-grain boundaries and causes an uneven distribution of etch pits by itself, but since Ag makes the size of the sub-grain boundaries fine,
The presence of Ag has the effect of increasing the uniform dispersibility of etch pits. If the Ga content is less than 1 ppm, the above effect is poor, while if it exceeds 50 ppm, the local solubility increases.
Prevents uniform distribution of etch pits. Therefore, the Ga content is preferably 1 to 50 ppm, the particularly preferable lower limit value is 8 ppm, and the particularly preferable upper limit value is 20 ppm.

【0014】Fe、Siは、マトリックス中でAlとの
化合物を形成しやすく、これらの元素の分散状態を制御
することにより、Agの濃度分布を均一にすることがで
き、ひいてはエッチピット分布を均一にすることができ
る。このような効果においてFe、Siは均等物であ
り、少なくとも1種を含有すれば良い。しかし、含有量
が多いとエッチング時の過溶解の原因となり静電容量が
低下する。そのため、Fe含有量は5〜60ppmが好
ましく、特に好ましい下限値は10ppm、特に好まし
い上限値は30ppmである。また、Si含有量は5〜
80ppmが好ましく、特に好ましい下限値は15pp
m、特に好ましい上限値は40ppmである。
Fe and Si easily form a compound with Al in the matrix, and by controlling the dispersion state of these elements, the Ag concentration distribution can be made uniform, which in turn makes the etch pit distribution uniform. Can be In such an effect, Fe and Si are equivalent, and at least one kind may be contained. However, if the content is large, it causes overdissolution at the time of etching and the electrostatic capacity is lowered. Therefore, the Fe content is preferably 5 to 60 ppm, the particularly preferable lower limit value is 10 ppm, and the particularly preferable upper limit value is 30 ppm. Further, the Si content is 5
80 ppm is preferable, and a particularly preferable lower limit is 15 pp
m, and a particularly preferable upper limit value is 40 ppm.

【0015】[0015]

【実施例】次に、この発明の電解コンデンサ電極用アル
ミニウム箔の具体的実施例について説明する。
Next, specific examples of the aluminum foil for an electrolytic capacitor electrode of the present invention will be described.

【0016】まず、表1に示す各種組成のアルミニウム
鋳塊を面削した後、熱間圧延、冷間圧延(中間焼鈍を含
む)を施し、さらに最終焼鈍を行い、最終的に厚さが1
00μmのアルミニウム箔を作製した。
First, aluminum ingots of various compositions shown in Table 1 are chamfered, followed by hot rolling, cold rolling (including intermediate annealing), and further final annealing, so that the final thickness is 1
An aluminum foil of 00 μm was produced.

【0017】次に、各アルミニウム箔について、以下の
条件でエッチングを実施したのち、得られたアルミニウ
ム箔を5%ホウ酸液中で250Vに化成したときの静電
容量を測定した。その結果を、比較例20の静電容量を
100%としたときの相対比較にて表1に示す。
Next, each aluminum foil was etched under the following conditions, and the capacitance of the obtained aluminum foil was measured at 250 V in 5% boric acid solution. The results are shown in Table 1 as a relative comparison when the electrostatic capacity of Comparative Example 20 is 100%.

【0018】 [エッチング条件] 前処理 液組成:0.01%NaOH,液温:30℃, 時間:60秒 一次エッチング 液組成:5%HCl+10%H2 SO4 、液温:75℃ 電流密度:直流20A/dm2 、時間:80秒 二次エッチング 液組成:5%HCl、液温:75℃、 電流密度:直流5A/dm2 、時間:10分[Etching conditions] Pretreatment liquid composition: 0.01% NaOH, liquid temperature: 30 ° C., time: 60 seconds Primary etching liquid composition: 5% HCl + 10% H 2 SO 4 , liquid temperature: 75 ° C. Current density: DC 20A / dm 2 , time: 80 seconds Secondary etching liquid composition: 5% HCl, liquid temperature: 75 ° C, current density: DC 5A / dm 2 , time: 10 minutes

【表1】 [Table 1]

【0019】表1の結果から、表面に本発明範囲のAg
を含有する本発明実施品は、本発明範囲を逸脱する比較
品に較べて静電容量を増大し得ることを確認し得た。ま
た、Pb、Zn、Ga、Fe、Siを所定範囲で添加す
ることにより、相乗的に静電容量の増大しうることも確
認し得た。
From the results shown in Table 1, Ag in the range of the present invention was added to the surface.
It has been confirmed that the product of the present invention containing the above can increase the capacitance as compared with the comparative product which deviates from the scope of the present invention. It was also confirmed that the addition of Pb, Zn, Ga, Fe and Si in a predetermined range synergistically increased the capacitance.

【0020】[0020]

【発明の効果】この発明に係る電解コンデンサ電極用ア
ルミニウム箔は、基本的に、アルミニウム純度が99.
9%以上で、Ag:15〜300ppmを含有すること
を特徴とするものであるから、エッチピットの密度を高
めるととも深さを大きくし、かつ均一に分散させ、エッ
チング処理により極めて大きな拡面率を得ることができ
る。従って、大きな静電容量を有し電気的特性に優れた
電解コンデンサ電極用アルミニウム箔となしうる。
The aluminum foil for electrolytic capacitor electrodes according to the present invention basically has an aluminum purity of 99.
Since it is characterized by containing 15% to 300 ppm of Ag at 9% or more, the density of the etch pits is increased, the depth is increased, and the pits are evenly dispersed. You can get a rate. Therefore, it is possible to provide an aluminum foil for an electrolytic capacitor electrode having a large capacitance and excellent electrical characteristics.

【0021】また、上記のAgの他に、Pb:0.1〜
5ppm、Zn:1〜50ppm、Ga:1〜50pp
m、Fe:5〜60ppm、Si:5〜80ppmのう
ちの1種以上の含有によって、さらにエッチング特性が
向上し、相乗的に大きな静電容量を有し電気的特性に優
れた電解コンデンサ電極用アルミニウム箔となしうる。
In addition to the above Ag, Pb: 0.1
5 ppm, Zn: 1 to 50 ppm, Ga: 1 to 50 pp
m, Fe: 5 to 60 ppm, Si: 5 to 80 ppm, by further containing one or more, the etching characteristics are further improved, and for electrolytic capacitor electrodes having a synergistically large electrostatic capacity and excellent electrical characteristics. Can be made with aluminum foil.

───────────────────────────────────────────────────── フロントページの続き (72)発明者 山ノ井 智明 堺市海山町6丁224番地 昭和アルミニウ ム株式会社内 (72)発明者 粟屋 庫太 堺市海山町6丁224番地 昭和アルミニウ ム株式会社内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Tomoaki Yamanoi, 6-224, Kaiyamacho, Sakai City, Showa Aluminum Co., Ltd.

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】 アルミニウム純度が99.9%以上で、
Ag:15〜300ppmを含有することを特徴とする
電解コンデンサ電極用アルミニウム箔。
1. The aluminum purity is 99.9% or more,
An aluminum foil for an electrolytic capacitor electrode, which contains Ag: 15 to 300 ppm.
【請求項2】 アルミニウム純度が99.9%以上で、
Ag:15〜300ppmを含有し、さらにPb:0.
1〜5ppm、Zn:1〜50ppm、Ga:1〜50
ppm、Fe:5〜60ppm、Si:5〜80ppm
のうちの1種以上を含有することを特徴とする電解コン
デンサ電極用アルミニウム箔。
2. The aluminum purity is 99.9% or more,
Ag: 15-300ppm, Pb: 0.
1 to 5 ppm, Zn: 1 to 50 ppm, Ga: 1 to 50
ppm, Fe: 5 to 60 ppm, Si: 5 to 80 ppm
An aluminum foil for an electrolytic capacitor electrode, which contains at least one of the above.
JP2005396A 1996-02-06 1996-02-06 Aluminum foil for electrode of electrolytic capacitor Pending JPH09213586A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005396A JPH09213586A (en) 1996-02-06 1996-02-06 Aluminum foil for electrode of electrolytic capacitor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005396A JPH09213586A (en) 1996-02-06 1996-02-06 Aluminum foil for electrode of electrolytic capacitor

Publications (1)

Publication Number Publication Date
JPH09213586A true JPH09213586A (en) 1997-08-15

Family

ID=12016336

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005396A Pending JPH09213586A (en) 1996-02-06 1996-02-06 Aluminum foil for electrode of electrolytic capacitor

Country Status (1)

Country Link
JP (1) JPH09213586A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007146269A (en) * 2004-12-21 2007-06-14 Showa Denko Kk Aluminum material for electrolytic capacitor electrode, method for producing electrode material for electrolytic capacitor, and anode material for aluminum electrolytic capacitor and aluminum electrolytic capacitor
JP2008024992A (en) * 2006-07-21 2008-02-07 Toyo Aluminium Kk Aluminum alloy foil for printed circuit
JP2012144809A (en) * 2005-05-31 2012-08-02 Showa Denko Kk Aluminum material for electrolytic capacitor electrode, method for manufacturing electrode material for electrolytic capacitor, anode material for aluminum electrolytic capacitor, and aluminum electrolytic capacitor

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007146269A (en) * 2004-12-21 2007-06-14 Showa Denko Kk Aluminum material for electrolytic capacitor electrode, method for producing electrode material for electrolytic capacitor, and anode material for aluminum electrolytic capacitor and aluminum electrolytic capacitor
JP2012144809A (en) * 2005-05-31 2012-08-02 Showa Denko Kk Aluminum material for electrolytic capacitor electrode, method for manufacturing electrode material for electrolytic capacitor, anode material for aluminum electrolytic capacitor, and aluminum electrolytic capacitor
JP2008024992A (en) * 2006-07-21 2008-02-07 Toyo Aluminium Kk Aluminum alloy foil for printed circuit

Similar Documents

Publication Publication Date Title
KR100350210B1 (en) Etching Method of Aluminum Foil for Electrolytic Capacitor Electrode
JP3478918B2 (en) Aluminum foil for electrode of electrolytic capacitor
JP2005179719A (en) Aluminum foil for electrolytic capacitor, and its production method
JPH09213586A (en) Aluminum foil for electrode of electrolytic capacitor
JP3428035B2 (en) Aluminum foil for anode of ultra-high voltage Al electrolytic capacitor
JP3218176B2 (en) Aluminum foil for electrolytic capacitor electrodes
JP2014231620A (en) Aluminum alloy foil for electrolytic capacitor electrode
JP4650887B2 (en) Aluminum foil for electrolytic capacitors
JP5063057B2 (en) Aluminum material for electrolytic capacitor electrode, method for producing electrode material for electrolytic capacitor, electrode material for electrolytic capacitor, and aluminum electrolytic capacitor
JP2002043186A (en) Method of manufacturing aluminum foil for electrode of electrolytic capacitor
JP4916605B2 (en) Aluminum material for electrolytic capacitor electrode, aluminum foil, and method for producing aluminum foil
CN112646990A (en) Rolled aluminum material for anode of low-voltage electrolytic capacitor and method for producing same
JPH09180968A (en) Aluminum foil for electrolytic capacitor electrode
JP3590228B2 (en) Aluminum foil for electrolytic capacitor electrodes
JP2002118035A (en) Electrolytic capacitor electrode aluminum foil
JP3590229B2 (en) Aluminum foil for electrolytic capacitor electrodes
JP3462276B2 (en) Aluminum foil for electrolytic capacitor electrode and method for producing aluminum electrode foil using the foil
CN112646999A (en) Rolled aluminum material for high-voltage electrolytic capacitor anode and method for producing same
JP2006002225A (en) Aluminum foil for electrolytic capacitor, and electrolytic capacitor
JP2809988B2 (en) Aluminum foil for electrolytic capacitor electrode and etching method thereof
JPH08273988A (en) Method for etching electrolytic capacitor electrode aluminum
JP3899479B2 (en) Aluminum foil for electrolytic capacitor electrode
JPH06124855A (en) Aluminum material for electrolytic capacitor electrode
JP2006152402A (en) Aluminum foil for electrolytic capacitor
JP2001167986A (en) Aluminum foil for electrode of electrolytic capacitor

Legal Events

Date Code Title Description
A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20040323