JPH09207064A - Carrier for double side polisher and method for polishing both faces of work using the carrier - Google Patents

Carrier for double side polisher and method for polishing both faces of work using the carrier

Info

Publication number
JPH09207064A
JPH09207064A JP3868096A JP3868096A JPH09207064A JP H09207064 A JPH09207064 A JP H09207064A JP 3868096 A JP3868096 A JP 3868096A JP 3868096 A JP3868096 A JP 3868096A JP H09207064 A JPH09207064 A JP H09207064A
Authority
JP
Japan
Prior art keywords
carrier
resin
polishing
small holes
metal plate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3868096A
Other languages
Japanese (ja)
Inventor
Tadahiro Kato
忠弘 加藤
Hisashi Masumura
寿 桝村
Hideo Kudo
秀雄 工藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Handotai Co Ltd
Original Assignee
Shin Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd
Priority to JP3868096A priority Critical patent/JPH09207064A/en
Publication of JPH09207064A publication Critical patent/JPH09207064A/en
Pending legal-status Critical Current

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  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

PROBLEM TO BE SOLVED: To prevent the occurrence of a trouble, such as metallic pollution by a method wherein when the both faces of, for example, a semiconductor substrate are polished, the strength of a carrier to hold a substrate is ensured. SOLUTION: A number of small holes 6,... are formed in an Sk material being the core of a carrier 1 or a metallic core 2, such as an SUS material. Resin coats 3 are formed on both faces of the metallic core 2 and the small holes 6 are also filled with resin, and the peel strength of the resin coat 3 is improved by firmly combining together the resin coat 3 on the surface side and the resin coat 3 on the back side. Further, the diameters of the small holes 6,... are set to 10mm ϕ or less. By using a so formed carrier, a work is polished.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【発明の属する技術分野】本発明は、例えば半導体基板
の両面を研磨する際、当該半導体基板を保持しておくキ
ャリアの改良に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an improvement of a carrier for holding a semiconductor substrate when polishing both surfaces of the semiconductor substrate.

【0002】[0002]

【従来の技術】従来、例えば半導体基板の両面をポリッ
シング等で研磨する際、キャリアによって半導体基板を
保持して行うようにしている。すなわち、このキャリア
は、半導体基板より薄い厚みに形成され、両面研磨機の
上定盤と下定盤の間の所定位置に保持し得るようにされ
るとともに基板保持孔を備えている。そしてこの基板保
持孔に半導体基板を挿入して保持し、上定盤と下定盤の
対向面に設けられた研磨布等の研磨具で半導体基板の上
下面を挟み込み、研磨面に研磨液を供給しながら研磨す
るようにしている。
2. Description of the Related Art Conventionally, for example, when polishing both surfaces of a semiconductor substrate by polishing or the like, the semiconductor substrate is held by a carrier. That is, this carrier is formed to have a thickness smaller than that of the semiconductor substrate, is configured to be held at a predetermined position between the upper platen and the lower platen of the double-side polishing machine, and has a substrate holding hole. Then, the semiconductor substrate is inserted and held in this substrate holding hole, and the upper and lower surfaces of the semiconductor substrate are sandwiched by a polishing tool such as a polishing cloth provided on the facing surface of the upper surface plate and the lower surface plate, and the polishing liquid is supplied to the polishing surface. While trying to polish.

【0003】ところで、このようなキャリアとして例え
ば樹脂製のもの、又は金属板の表裏面に樹脂を被覆した
ものが一般的に良く知られている。そして前者の場合は
通常繊維強化樹脂が多く用いられており、後者の場合は
金属板の表面に樹脂をスプレーコートしたり、樹脂フィ
ルムを接着したりして樹脂層を形成するようにしてい
る。
By the way, as such a carrier, for example, a carrier made of resin, or a metal plate having front and rear surfaces coated with resin is generally well known. In the former case, a fiber-reinforced resin is usually used in many cases, and in the latter case, a resin layer is formed by spray-coating the resin on the surface of the metal plate or adhering a resin film.

【0004】[0004]

【発明が解決しようとする課題】ところが、研磨中キャ
リアには負荷がかかるため、特に前者のような樹脂製の
ものでは強度が不足しがちで容易に破壊するという問題
があった。また、後者のように金属板の表面に単に樹脂
層を被着させるだけでは研磨中に樹脂層が剥離しやす
く、仮に金属板が露出してしまうと金属汚染という半導
体基板にとって致命的な欠陥が生じ製品の歩留りが悪く
なるという問題があった。
However, since the carrier is subjected to a load during polishing, there is a problem that the former one made of resin in particular tends to lack strength and is easily broken. In addition, if the resin layer is simply adhered to the surface of the metal plate as in the latter case, the resin layer is easily peeled off during polishing, and if the metal plate is exposed, a fatal defect for the semiconductor substrate such as metal contamination may occur. There was a problem that the yield of the product was deteriorated.

【0005】そこで、強度がありしかも金属汚染等の不
具合を招かないキャリアが望まれていた。
Therefore, there has been a demand for a carrier that is strong and does not cause problems such as metal contamination.

【0006】[0006]

【課題を解決するための手段】上記課題を解決するため
本発明は、請求項1において、被加工物の両面を研磨す
る際被加工物を保持しておくキャリアであって、金属板
コアの表裏面に樹脂層を形成するようにした両面研磨機
用キャリアにおいて、金属板コアに多数の小孔を穿設
し、この小孔内に樹脂を充填して表裏面の樹脂層を結合
するようにした。また、請求項2では、小孔の径を10
mmφ以下とした。
In order to solve the above problems, the present invention provides a carrier for holding a work piece when polishing both sides of the work piece according to claim 1, which comprises a metal plate core. In a carrier for a double-sided polishing machine in which a resin layer is formed on the front and back surfaces, a large number of small holes are bored in a metal plate core, and resin is filled in the small holes to bond the resin layers on the front and back surfaces. I chose Further, in claim 2, the diameter of the small hole is 10
It was set to mmφ or less.

【0007】そしてこのように芯材として金属板を用い
れば、研磨中にかかる荷重に対する強度は充分であり、
また金属板コアに穿設した多数の小孔内に樹脂を充填
し、表面側の樹脂層と裏面側の樹脂層を結合すれば、樹
脂の剥離強度が高まり、金属露出という事態を避けるこ
とが出来る。この際、小孔の径を10mmφ以下にすれば
表裏面の樹脂層の結合強度を高めることが出来、しかも
金属板コアの剛性を損なわない。
When the metal plate is used as the core material in this way, the strength against the load applied during polishing is sufficient,
In addition, if a large number of small holes drilled in the metal plate core are filled with resin and the resin layer on the front surface side and the resin layer on the back surface side are bonded together, the peel strength of the resin increases and the situation of metal exposure can be avoided. I can. At this time, if the diameter of the small holes is 10 mmφ or less, the bonding strength of the resin layers on the front and back surfaces can be increased, and the rigidity of the metal plate core is not impaired.

【0008】従って、このような請求項1、請求項2の
キャリアを用いて、被加工物の両面を研磨すれば、金属
汚染等の心配なく、安定して被加工物を研磨することが
できるので、これを本発明の請求項3の発明とした。
Therefore, if both surfaces of the workpiece are polished by using the carrier according to claims 1 and 2, it is possible to stably polish the workpiece without fear of metal contamination. Therefore, this is the invention of claim 3 of the present invention.

【0009】[0009]

【発明の実施の形態】本発明の実施の形態について添付
した図面に基づき説明する。ここで図1は両面研磨機の
構造を説明するための縦断面図、図2は平面視による内
部構造図、図3はキャリアの芯材となる金属板コアの一
例を示す平面図、図4はキャリアの断面モデル図であ
る。本発明の両面研磨機用キャリアは、例えば薄くスラ
イスした半導体基板の両面を鏡面仕上げするような両面
研磨機において、半導体基板を保持しておくキャリアの
改良に関するものであり、まず両面研磨機の概要につい
て図1及び図2に基づき説明する。
Embodiments of the present invention will be described with reference to the accompanying drawings. Here, FIG. 1 is a vertical cross-sectional view for explaining the structure of the double-side polishing machine, FIG. 2 is an internal structure view in plan view, FIG. 3 is a plan view showing an example of a metal plate core serving as a core material of a carrier, and FIG. FIG. 4 is a cross-sectional model view of a carrier. The carrier for a double-sided polishing machine of the present invention relates to an improvement of a carrier for holding a semiconductor substrate in a double-sided polishing machine for mirror-finishing both sides of a thinly sliced semiconductor substrate, for example. Will be described with reference to FIGS. 1 and 2.

【0010】両面研磨機10は、上下に相対向して設け
られた下定盤11と上定盤12を備えており、各定盤1
1、12の対向面側には、夫々研磨布11a、12aが
取付けられるとともに、これら各定盤11、12は中心
軸まわりに不図示の駆動源によって回転自在にされてい
る。
The double-sided polishing machine 10 comprises a lower surface plate 11 and an upper surface plate 12 which are vertically opposed to each other.
Polishing cloths 11a and 12a are attached to the facing surfaces of the Nos. 1 and 12, respectively, and the respective surface plates 11 and 12 are rotatable about a central axis by a drive source (not shown).

【0011】また、下定盤11と上定盤12の間の中心
部には太陽歯車13が設けられるとともに、周縁部には
内歯歯車14の歯部が臨んでおり、この太陽歯車13と
内歯歯車14の各歯部には円盤状の本キャリア1の外周
歯が噛合している。そしてこのキャリア1には、後述す
る基板保持孔4が複数形成され、この基板保持孔4にキ
ャリア1の板厚より厚い半導体基板Wを挿入セットした
後、この半導体基板Wを下定盤11と上定盤12で挟み
込み、太陽歯車13と内歯歯車14によってキャリア1
を自転させつつ公転させ、下定盤11と上定盤12を相
対方向に回転させて各研磨布11a、12aで研磨する
ようにしている。
A sun gear 13 is provided in the central portion between the lower turn table 11 and the upper turn table 12, and a tooth portion of an internal gear 14 faces the peripheral edge of the sun gear 13. The outer peripheral teeth of the disk-shaped main carrier 1 are meshed with the respective tooth portions of the tooth gear 14. A plurality of substrate holding holes 4 to be described later are formed in the carrier 1, and a semiconductor substrate W thicker than the thickness of the carrier 1 is inserted and set in the substrate holding holes 4, and then the semiconductor substrate W is placed on the lower surface plate 11 and the upper platen 11. The carrier 1 is sandwiched between the surface plate 12 and the sun gear 13 and the internal gear 14.
Is rotated and revolved, the lower surface plate 11 and the upper surface plate 12 are rotated in a relative direction, and the polishing cloths 11a and 12a are used for polishing.

【0012】この際、図1に示すように、上定盤12の
上部のノズル15から研磨液を供給し、上定盤12に設
けた貫通孔16を通して研磨面に送り込むようにしてい
る。因みに、キャリア1には後述する研磨液孔5を設け
ており、この研磨液孔5を通して下面側の研磨面にもま
んべんなく研磨液が供給される。
At this time, as shown in FIG. 1, the polishing liquid is supplied from the nozzle 15 on the upper surface plate 12 and sent to the polishing surface through the through holes 16 provided in the upper surface plate 12. Incidentally, the carrier 1 is provided with a polishing liquid hole 5 described later, and the polishing liquid is evenly supplied to the polishing surface on the lower surface side through the polishing liquid hole 5.

【0013】前記キャリア1は、図3に示すような金属
板コア2の全周囲を図4に示すような樹脂コート3で被
覆して形成し、必要な強度を確保するとともに、樹脂コ
ート3の剥離強度を高めるようにしている。そして金属
板コア2は、外周に歯部G、…が形成された円盤状であ
り、またこの金属板コア2の板厚は、キャリア1の所望
の厚みの約8〜9割の厚みを持ち、材質は例えばSK材
やSUS材の金属としている。
The carrier 1 is formed by covering the entire circumference of a metal plate core 2 as shown in FIG. 3 with a resin coat 3 as shown in FIG. The peel strength is increased. The metal plate core 2 has a disk shape with teeth G, ... Formed on the outer periphery, and the plate thickness of the metal plate core 2 is about 80 to 90% of the desired thickness of the carrier 1. The material is a metal such as SK material or SUS material.

【0014】また、この金属板コア2には、前記半導体
基板Wを挿入する大径の基板保持孔4、…と、研磨液を
通すための中径の研磨液孔5、…と、多数の小孔6、…
がいずれも貫通孔として設けられており、前記基板保持
孔4、…の径は半導体基板Wの径に合せて形成されると
ともに、実施例では基板保持孔4、…を3箇所に設け、
同時に3枚の半導体基板W、…を保持し得るようにして
いる。
Further, the metal plate core 2 has a large number of substrate holding holes 4 into which the semiconductor substrate W is inserted, a medium diameter polishing liquid hole 5 for passing a polishing liquid, and a large number of holes. Small hole 6, ...
Are provided as through holes, and the diameters of the substrate holding holes 4, ... Are formed in accordance with the diameter of the semiconductor substrate W. In the embodiment, the substrate holding holes 4 ,.
At the same time, three semiconductor substrates W, ... Can be held.

【0015】前記小孔6、…は、直径を10mmφ以下と
し、実施例では約5mmφ〜10mmφ程度にしている。ま
た、小孔6、…の間隔は、樹脂の材質等によって異なら
せることが好ましいが、例えば5〜10mm程度が適当で
ある。
The small holes 6, ... Have a diameter of 10 mmφ or less, and in the embodiment, about 5 mmφ-10 mmφ. Further, the interval between the small holes 6, ... Is preferably different depending on the material of the resin and the like, but is suitably about 5 to 10 mm, for example.

【0016】以上のような金属板コア2の表裏面に樹脂
コート3を被覆する。この際、基板保持孔4、…と研磨
液孔5、…については、内周端面にだけ樹脂コート3を
被覆して孔の貫通状態を維持させ、小孔6、…について
は図4に示すように内部に樹脂を充填して盲孔状態にす
る。このため、表面側の樹脂コート3と裏面側の樹脂コ
ート3は、小孔6、…内の樹脂によって結合された状態
になり、強固に金属板コア2表面に被着する。
A resin coat 3 is coated on the front and back surfaces of the metal plate core 2 as described above. At this time, the substrate holding holes 4, ... And the polishing liquid holes 5, ... Are covered with the resin coat 3 only on the inner peripheral end faces to maintain the through state of the holes, and the small holes 6 ,. The inside is filled with resin to form a blind hole. Therefore, the resin coat 3 on the front surface side and the resin coat 3 on the back surface side are in a state of being bonded by the resin in the small holes 6, ..., And firmly adhere to the surface of the metal plate core 2.

【0017】尚、上記のような樹脂コート3は、熱溶融
した樹脂を金型成形によって金属板コア2の表裏面に向
けて射出し、射出圧で小孔6、…内部に充填し表裏面に
コーティングした樹脂を結合するようにしても良く、ま
た、熱硬化性樹脂フィルムを金属板コア2の表裏面に接
着し、加熱・加圧して小孔6、…の内部に樹脂を充填
し、表裏面の樹脂を結合するようにしても良い。そし
て、金属板コア2の外表面全域を樹脂コート3で被覆し
て金属露出部を無くす。ここで、用いられる樹脂の材質
としては、加工成型性に優れたものとする必要があり、
例えばポリイミド、ポリアミド、ポリエチレン、ポリプ
ロピレン、ポリアセタール等が好適である。尚、以上の
ようなキャリア1は、半導体基板Wの厚みより薄く構成
される。
The resin coat 3 as described above is formed by injecting a heat-melted resin toward the front and back surfaces of the metal plate core 2 by molding and filling the small holes 6, ... Alternatively, a thermosetting resin film may be adhered to the front and back surfaces of the metal plate core 2 and heated and pressed to fill the resin into the small holes 6 ,. You may make it bond the resin of the front and back. Then, the entire outer surface of the metal plate core 2 is covered with the resin coat 3 to eliminate the metal exposed portion. Here, as the material of the resin used, it is necessary to have excellent workability and moldability,
For example, polyimide, polyamide, polyethylene, polypropylene, polyacetal and the like are suitable. The carrier 1 as described above is made thinner than the thickness of the semiconductor substrate W.

【0018】以上のように構成したキャリア1におい
て、基板保持孔4内に半導体基板Wが挿入されて保持さ
れると半導体基板の上下面は両面研磨機の上定盤12と
下定盤11によって挟み込まれる。そして研磨面に研磨
液を供給しつつ、上定盤12と下定盤11を相対方向に
回転させながらポリッシング加工が行われる。この際、
例えば半導体基板Wの上面に供給された研磨液は、研磨
液孔5、…を通って下面にもまんべんなく行き渡る。
In the carrier 1 constructed as described above, when the semiconductor substrate W is inserted and held in the substrate holding hole 4, the upper and lower surfaces of the semiconductor substrate are sandwiched by the upper surface plate 12 and the lower surface plate 11 of the double-side polishing machine. Be done. Then, while supplying the polishing liquid to the polishing surface, the polishing process is performed while rotating the upper surface plate 12 and the lower surface plate 11 in a relative direction. On this occasion,
For example, the polishing liquid supplied to the upper surface of the semiconductor substrate W spreads evenly to the lower surface through the polishing liquid holes 5, ....

【0019】この研磨中、キャリア1に加わる力は研磨
条件にもよるが、通常500g/cm2以上にも及ぶ。しか
しながら、本案の場合は金属板コア2によって上記荷重
に充分耐え得る強度を有するとともに、この金属板コア
2の外表面を覆う樹脂コート3は、小孔6、…内の樹脂
により強固に結合しているため、樹脂コート3が剥離し
にくい。従って、半導体基板を金属汚染させることもな
い。
The force applied to the carrier 1 during the polishing is usually 500 g / cm 2 or more, though it depends on the polishing conditions. However, in the case of the present invention, the metal plate core 2 has sufficient strength to withstand the above-mentioned load, and the resin coat 3 covering the outer surface of the metal plate core 2 is firmly bonded by the resin in the small holes 6 ,. Therefore, the resin coat 3 is difficult to peel off. Therefore, the semiconductor substrate is not contaminated with metal.

【0020】ところで、図5は、本発明のキャリアと従
来のキャリアを比較した実験値を示すものである。ここ
で従来例は、ガラスファイバーにエポキシ樹脂を含浸さ
せたエポキシガラス製と、SK材の表面に樹脂を被覆
(フィルム)したSK+樹脂フィルム製であり、いずれ
も一定の研磨条件で延べ20時間研磨し耐久時間(縦
軸)を調べた。
By the way, FIG. 5 shows experimental values comparing the carrier of the present invention with the conventional carrier. Here, the conventional example is made of epoxy glass in which glass fiber is impregnated with epoxy resin, and SK + resin film in which resin is coated (film) on the surface of SK material. Both are polished for a total of 20 hours under constant polishing conditions. Then, the durability time (vertical axis) was examined.

【0021】この結果、エポキシガラス製のキャリア
は、約0.5時間で歯部Gが破壊し、SK+樹脂フィル
ム製の場合は、約5時間でフィルムの剥離が生じた。こ
れに対して、本案の場合は20時間研磨しても変化は見
られなかった。この結果から本案の有効性が確認され
た。尚、実施例では小孔6、…の形状を円形にしている
が、それ以外の形状であっても有効であることはいうま
でもない。
As a result, in the epoxy glass carrier, the tooth portion G was broken in about 0.5 hours, and in the case of the SK + resin film, the film peeled off in about 5 hours. On the contrary, in the case of the present invention, no change was observed even after polishing for 20 hours. From this result, the effectiveness of this plan was confirmed. Although the small holes 6, ... Have a circular shape in the embodiment, it goes without saying that other shapes are also effective.

【0022】[0022]

【発明の効果】以上のように本発明の両面研磨機用キャ
リアは、請求項1のように、芯材となる金属板コアに多
数の小孔を穿設し、この小孔内に樹脂を充填して表裏面
に形成される樹脂層を結合するようにしたため、研磨中
にかかる荷重に充分耐え得る強度を確保出来、また表裏
面の樹脂層を強固に結合することが出来る。このため金
属露出を抑制することが出来、金属汚染等の不具合を避
けることが出来る。また、請求項2では、小孔の径を1
0mmφ以下としたため、金属板コアの剛性を損なうこと
なく表裏面の樹脂層を強固に結合出来る。従って、この
ような請求項1、請求項2のキャリアを用いて、被加工
物の両面を研磨すれば、金属汚染等の心配なく、安定し
て被加工物を研磨することができる。
As described above, in the carrier for a double-sided polishing machine of the present invention, a large number of small holes are formed in the core of a metal plate as a core material, and a resin is placed in the small holes. Since the resin layers formed on the front and back surfaces by filling are bonded to each other, it is possible to secure sufficient strength to withstand the load applied during polishing and to firmly bond the resin layers on the front and back surfaces. Therefore, metal exposure can be suppressed, and problems such as metal contamination can be avoided. Further, in claim 2, the diameter of the small hole is 1
Since the diameter is 0 mm or less, the resin layers on the front and back surfaces can be firmly bonded without impairing the rigidity of the metal plate core. Therefore, if both surfaces of the workpiece are polished by using the carrier according to the first and second aspects, it is possible to stably polish the workpiece without worrying about metal contamination.

【図面の簡単な説明】[Brief description of drawings]

【図1】両面研磨機の構造を説明するための縦断面図で
ある。
FIG. 1 is a vertical cross-sectional view for explaining the structure of a double-side polishing machine.

【図2】両面研磨機の平面視による内部構造図である。FIG. 2 is a plan view of an internal structure of the double-sided polishing machine.

【図3】キャリアの芯材となる金属板コアの一例を示す
平面図である。
FIG. 3 is a plan view showing an example of a metal plate core serving as a core material of a carrier.

【図4】キャリアの断面モデル図である。FIG. 4 is a sectional model view of a carrier.

【図5】本発明のキャリアと従来のキャリアの耐久試験
を行った結果図である。
FIG. 5 is a result diagram of a durability test of the carrier of the present invention and the conventional carrier.

【符号の説明】[Explanation of symbols]

1…キャリア、 2…金属板コア、3
…樹脂コート、 4…基板保持孔、5…
研磨液孔、 6…小孔、10…両面研
磨機、11…下定盤、 11a…研磨
布、12…上定盤、 12a…研磨布、
13…太陽歯車、 14…内歯歯車、1
5…ノズル、 16…貫通孔、G…歯
部、 W…半導体基板。
1 ... Carrier, 2 ... Metal plate core, 3
… Resin coat, 4… Substrate holding hole, 5…
Polishing liquid hole, 6 ... Small hole, 10 ... Double side polishing machine, 11 ... Lower surface plate, 11a ... Abrasive cloth, 12 ... Upper surface plate, 12a ... Abrasive cloth,
13 ... Sun gear, 14 ... Internal gear, 1
5 ... Nozzle, 16 ... Through hole, G ... Tooth portion, W ... Semiconductor substrate.

フロントページの続き (72)発明者 工藤 秀雄 福島県西白河郡西郷村大字小田倉字大平 150 信越半導体株式会社半導体白河研究 所内Front page continued (72) Inventor Hideo Kudo Ogokura, Ogokura, Nishigomura, Nishishirakawa-gun, Fukushima 150 Shin-Etsu Semiconductor Co., Ltd. Semiconductor Shirakawa Research Center

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】 被加工物の両面を研磨する際被加工物を
保持しておくキャリアであって、金属板コアの表裏面に
樹脂層を形成するようにした両面研磨機用キャリアにお
いて、前記金属板コアに多数の小孔を穿設し、この小孔
内に樹脂を充填して表裏面の樹脂層を結合することを特
徴とする両面研磨機用キャリア。
1. A carrier for holding a work piece when polishing both sides of the work piece, wherein a carrier for a double-sided polishing machine is such that a resin layer is formed on the front and back surfaces of a metal plate core. A carrier for a double-sided polishing machine, characterized in that a large number of small holes are formed in a metal plate core, and the small holes are filled with resin to bond the resin layers on the front and back surfaces.
【請求項2】 請求項1に記載の両面研磨機用キャリア
において、前記小孔の径は10mmφ以下であることを特
徴とする両面研磨機用キャリア。
2. The carrier for a double-sided polishing machine according to claim 1, wherein the diameter of the small holes is 10 mmφ or less.
【請求項3】 請求項1または請求項2に記載した両面
研磨機用キャリアを用いることを特徴とする、被加工物
の両面を研磨する方法。
3. A method for polishing both sides of a workpiece, which comprises using the carrier for a double-sided polishing machine according to claim 1 or 2.
JP3868096A 1996-02-01 1996-02-01 Carrier for double side polisher and method for polishing both faces of work using the carrier Pending JPH09207064A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3868096A JPH09207064A (en) 1996-02-01 1996-02-01 Carrier for double side polisher and method for polishing both faces of work using the carrier

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3868096A JPH09207064A (en) 1996-02-01 1996-02-01 Carrier for double side polisher and method for polishing both faces of work using the carrier

Publications (1)

Publication Number Publication Date
JPH09207064A true JPH09207064A (en) 1997-08-12

Family

ID=12532004

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3868096A Pending JPH09207064A (en) 1996-02-01 1996-02-01 Carrier for double side polisher and method for polishing both faces of work using the carrier

Country Status (1)

Country Link
JP (1) JPH09207064A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010083429A (en) * 2000-02-12 2001-09-01 이은상 Lapping work device for using in-process electrolytic dressing
JP2004283929A (en) * 2003-03-20 2004-10-14 Shin Etsu Handotai Co Ltd Carrier for wafer holding, double side polishing device using it and double side polishing method of wafer
JP2007331035A (en) * 2006-06-12 2007-12-27 Epson Toyocom Corp Workpiece carrier, its manufacturing method, and double-side grinding machine
US20100311312A1 (en) * 2009-06-03 2010-12-09 Masanori Furukawa Double-side polishing apparatus and method for polishing both sides of wafer
JP2014128862A (en) * 2012-12-28 2014-07-10 Shuji Iwata Disc-shaped carrier
US9539695B2 (en) 2007-10-17 2017-01-10 Siltronic Ag Carrier, method for coating a carrier, and method for the simultaneous double-side material-removing machining of semiconductor wafers

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010083429A (en) * 2000-02-12 2001-09-01 이은상 Lapping work device for using in-process electrolytic dressing
JP2004283929A (en) * 2003-03-20 2004-10-14 Shin Etsu Handotai Co Ltd Carrier for wafer holding, double side polishing device using it and double side polishing method of wafer
JP2007331035A (en) * 2006-06-12 2007-12-27 Epson Toyocom Corp Workpiece carrier, its manufacturing method, and double-side grinding machine
US9539695B2 (en) 2007-10-17 2017-01-10 Siltronic Ag Carrier, method for coating a carrier, and method for the simultaneous double-side material-removing machining of semiconductor wafers
US20100311312A1 (en) * 2009-06-03 2010-12-09 Masanori Furukawa Double-side polishing apparatus and method for polishing both sides of wafer
US8485864B2 (en) * 2009-06-03 2013-07-16 Fujikoshi Machinery Corp. Double-side polishing apparatus and method for polishing both sides of wafer
JP2014128862A (en) * 2012-12-28 2014-07-10 Shuji Iwata Disc-shaped carrier

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