JPH09202966A - Formation of thin film - Google Patents
Formation of thin filmInfo
- Publication number
- JPH09202966A JPH09202966A JP4395296A JP4395296A JPH09202966A JP H09202966 A JPH09202966 A JP H09202966A JP 4395296 A JP4395296 A JP 4395296A JP 4395296 A JP4395296 A JP 4395296A JP H09202966 A JPH09202966 A JP H09202966A
- Authority
- JP
- Japan
- Prior art keywords
- target
- ion plating
- arc ion
- tin
- voltage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Physical Vapour Deposition (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、切削工具等の上にＴｉ
Ｎ（窒化チタン）及びｃ−ＢＮ（立方晶窒化ほう素）の
複合膜（以下ＴｉＢＮと記述する）の形成に関するもの
である。BACKGROUND OF THE INVENTION 1. Field of the Invention
It relates to formation of a composite film of N (titanium nitride) and c-BN (cubic boron nitride) (hereinafter referred to as TiBN).
【０００２】[0002]
【従来の技術】ｃ−ＢＮはダイヤモンドに次ぐ硬さを有
し、従来これを人工的に合成するには、六方晶窒化ほう
素を高温高圧処理して合成していた。最近、非晶質叉は
微結晶ＢＮをコーティングした後、高温高圧処理する
か、或いは窒素イオンを照射してｃ−ＢＮにする方法が
開発された。2. Description of the Related Art c-BN has the hardness second only to diamond, and conventionally, to artificially synthesize it, hexagonal boron nitride was treated at high temperature and high pressure. Recently, a method has been developed in which after coating with amorphous or microcrystalline BN, high temperature and high pressure treatment is performed or nitrogen ions are irradiated to obtain c-BN.
【０００３】[0003]
【発明が解決しようとする課題】高温高圧処理では、コ
ストが高く、叉非晶質或いは微結晶ＢＮをコーティング
した後、窒素イオン照射する方法では、工程が余計にか
かり、能率が悪くコスト高になる。The high temperature and high pressure treatment is costly, and the method of irradiating nitrogen ions after coating amorphous or microcrystalline BN also requires extra steps, which is inefficient and costly. Become.
【０００４】[0004]
【課題を解決するための手段】本発明は定電圧アークイ
オンプレーティング装置（１９９５年度精密工学会春季
大会学術講演会講演論文集８７５ページ参照）により、
ＴｉＢ２ターゲットからＴｉ（チタン）及びＢ（ほう
素）を蒸発させ、窒素との反応によりＴｉＢＮ膜を形成
させるものである。スパッタリング法も考えられるが、
スパッタはイオン化率がアークイオンプレーティングに
比べると劣る。叉Ｂを電子銃等で溶解、蒸発して作製す
る方法もあるが、いずれもアークイオンプレーティング
よりイオン化率の点で劣り、窒素との反応性が悪い。従
ってスパッタや、溶解法では十分硬い膜が得られない。
Ｂは電気的には絶縁体であり、Ｂ単独ではアークイオン
プレーティングのターゲットにするには問題がある。Ｔ
ｉＢ２は電気の良導体であり、これをターゲットにする
ことは簡単である。ｃ−ＢＮを作る為にＴｉは余計な物
と考えられるが、ＴｉＮも非常に硬い物質であり、ｃ−
ＢＮにＴｉＮが混ざっても全く問題ない。従来ダイヤモ
ンドの合成には高温高圧が不可欠であったが、最近はイ
オンを利用することにより、ダイヤモンドも気相合成可
能となつた。即ちイオンの持つエネルギーが高温高圧に
かわるものと考えられる。従ってｃ−ＢＮを気相法で合
成する為には、イオンに、ある値以上のエネルギーを持
たせる必要がある。アークイオンプレーティングの場
合、放電電圧を上げることで、この目的は達せられる。
しかし従来のアークイオンプレーティングは、電圧を制
御することが出来ず、その電圧はせいぜい４０ボルト位
しか上がらない。しかしパルス電圧を使った、定電圧ア
ークイオンプレーティング装置により、放電電圧を上げ
ることが可能である。鋭意研究の結果、ピーク電圧（パ
ルス電圧の場合、電圧計で測定すると、実効値で現れ
る。この値はピーク値よりも低い。定電圧アークイオン
プレーティングの場合、ピーク値が重要な意味を持つの
で、この場合電圧はピーク電圧で表す。）が５０ボルト
以上の放電により、ＴｉＢＮ膜が形成されることが分か
った。しかし無制限に電圧を上げても無駄であり、電源
も高価になる為、請求項１記載の範囲が適当である。但
し、ここで述べた電圧は、絶対値を表しており、ターゲ
ット側は、マイナスである。[Means for Solving the Problems] The present invention uses a constant voltage arc ion plating apparatus (see p. 875 of the paper of the 1995 Spring Meeting of the Precision Engineering Society of Japan).
The TiBN film is formed by evaporating Ti (titanium) and B (boron) from the TiB 2 target and reacting with nitrogen. A sputtering method can be considered,
Sputtering is inferior in ionization rate to arc ion plating. There is also a method of manufacturing the fork B by melting and evaporating it with an electron gun or the like, but both are inferior in the ionization rate to the arc ion plating and have poor reactivity with nitrogen. Therefore, a sufficiently hard film cannot be obtained by sputtering or the melting method.
B is an insulator electrically, and B alone has a problem to be a target of arc ion plating. T
iB 2 is a good conductor of electricity and it is easy to target it. Although Ti is considered to be an extra substance for making c-BN, TiN is also a very hard substance, and c-
There is no problem even if TiN is mixed with BN. Conventionally, high temperature and high pressure were indispensable for the synthesis of diamond, but recently it has become possible to synthesize diamond in the vapor phase by utilizing ions. That is, it is considered that the energy possessed by the ions changes to high temperature and high pressure. Therefore, in order to synthesize c-BN by the vapor phase method, it is necessary for the ions to have energy of a certain value or more. In the case of arc ion plating, this objective can be achieved by increasing the discharge voltage.
However, the conventional arc ion plating cannot control the voltage, and the voltage rises by about 40 volts at most. However, it is possible to raise the discharge voltage by a constant voltage arc ion plating device using a pulse voltage. As a result of intensive research, peak voltage (in the case of pulse voltage, it appears as an effective value when measured with a voltmeter. This value is lower than the peak value. In the case of constant voltage arc ion plating, the peak value is important. Therefore, in this case, it was found that the TiBN film was formed by the discharge of which the voltage is represented by the peak voltage) of 50 V or more. However, increasing the voltage indefinitely is wasteful and the power source becomes expensive, so the range of claim 1 is appropriate. However, the voltage described here represents an absolute value and is negative on the target side.
【０００５】[0005]
【実施例】定電圧アークイオンプレーティング装置にＴ
ｉＢ２ターゲットを取付け、窒素ガスを１００ＣＣ毎分
導入し、ピーク電圧８０ボルトで、２００アンペアの放
電によりスローアウェイチップ工具上に約３ミクロンの
ＴｉＢＮ膜を得た。この工具と、ＴｉＮだけを３ミクロ
ンコーティングした工具を用い、Ｓ４５Ｃを被削材とし
て、切削比較したところ、ＴｉＢＮコーティングしたも
のはＴｉＮコーティングのものより、５倍の寿命であっ
た。EXAMPLE A constant voltage arc ion plating apparatus was T
An iB 2 target was attached, nitrogen gas was introduced at 100 CC min −1, and a peak voltage of 80 V was discharged at 200 amps to obtain a TiBN film of about 3 microns on the throw-away tip tool. When this tool and a tool in which only TiN was coated to 3 μm were used and S45C was used as a work material and the cutting was compared, the life of TiBN coated was 5 times longer than that of TiN coated.
【０００６】[0006]
【発明の効果】以上説明したように、本発明によれば、
ＴｉＢＮ膜が簡単に、しかも安価に得られるのである。As described above, according to the present invention,
The TiBN film can be obtained easily and at low cost.
Claims (1)
を用い、ピーク電圧５０ボルト以上５００ボルト以下の
パルス放電により、ＴｉＢ２ターゲットからチタン及び
ほう素を蒸発させ、窒素と反応させてＴｉＮ及びｃ−Ｂ
Ｎ膜を形成する方法。1. A constant voltage arc ion plating device is used to evaporate titanium and boron from a TiB 2 target by pulse discharge with a peak voltage of 50 V or more and 500 V or less, and react with nitrogen to produce TiN and cB.
A method of forming an N film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4395296A JPH09202966A (en) | 1996-01-23 | 1996-01-23 | Formation of thin film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4395296A JPH09202966A (en) | 1996-01-23 | 1996-01-23 | Formation of thin film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH09202966A true JPH09202966A (en) | 1997-08-05 |
Family
ID=12678046
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4395296A Pending JPH09202966A (en) | 1996-01-23 | 1996-01-23 | Formation of thin film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH09202966A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1059935C (en) * | 1998-01-21 | 2000-12-27 | 吉林大学 | Isometric nanometer boron nitride film and its preparation |
| US6790543B2 (en) * | 2001-11-07 | 2004-09-14 | Hitachi Tool Engineering, Ltd. | Hard layer-coated tool |
| CN103898467A (en) * | 2014-04-18 | 2014-07-02 | 常州多晶涂层科技有限公司 | Nanometer composite TiCrBN coating and preparation method thereof |
| AT16481U1 (en) * | 2018-04-20 | 2019-10-15 | Plansee Composite Mat Gmbh | Target and method of making a target |
-
1996
- 1996-01-23 JP JP4395296A patent/JPH09202966A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1059935C (en) * | 1998-01-21 | 2000-12-27 | 吉林大学 | Isometric nanometer boron nitride film and its preparation |
| US6790543B2 (en) * | 2001-11-07 | 2004-09-14 | Hitachi Tool Engineering, Ltd. | Hard layer-coated tool |
| CN103898467A (en) * | 2014-04-18 | 2014-07-02 | 常州多晶涂层科技有限公司 | Nanometer composite TiCrBN coating and preparation method thereof |
| AT16481U1 (en) * | 2018-04-20 | 2019-10-15 | Plansee Composite Mat Gmbh | Target and method of making a target |
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