JPH0917920A - Semiconductor element cooling heat sink - Google Patents

Semiconductor element cooling heat sink

Info

Publication number
JPH0917920A
JPH0917920A JP18668995A JP18668995A JPH0917920A JP H0917920 A JPH0917920 A JP H0917920A JP 18668995 A JP18668995 A JP 18668995A JP 18668995 A JP18668995 A JP 18668995A JP H0917920 A JPH0917920 A JP H0917920A
Authority
JP
Japan
Prior art keywords
heat sink
heat
semiconductor element
hollow part
liquid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP18668995A
Other languages
Japanese (ja)
Inventor
Masao Suzuki
正夫 鈴木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RIYOOSAN KK
Original Assignee
RIYOOSAN KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RIYOOSAN KK filed Critical RIYOOSAN KK
Priority to JP18668995A priority Critical patent/JPH0917920A/en
Publication of JPH0917920A publication Critical patent/JPH0917920A/en
Pending legal-status Critical Current

Links

Landscapes

  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

PURPOSE: To improve heat dissipation property without enlarging a configuration of a heat sink body at all by forming a hollow part inside a heat sink body and enclosing liquid which is gasified by heat generation of a semiconductor element in the hollow part. CONSTITUTION: A heat sink body 1 consists of aluminum and almost an entire of an inside thereof is formed as a hollow part 2. One outer surface of the body 1 is a plane since it becomes an attaching surface of a semiconductor element 4, and the other surface which becomes a heat dissipation part is provided with a fin 3 which projects to an inside of the hollow part 2 for raising heat conduction efficiency. The hollow part 2 is charged with liquid perphlorocarbon 5 and is sealed. Therefore, according to this constitution, a weight can be greatly reduced when compared to a heat sink of the same configuration whose body 1 is all formed of aluminum. Thereby, it is possible to improve heat dissipation property without enlarging a configuration of a device at all.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】この発明は、民生用産業用を問わ
ず、あらゆる分野の電源供給装置や制御装置等に使用さ
れるトランジスタやダイオード等の半導体素子を冷却す
るためのヒートシンクに関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a heat sink for cooling semiconductor elements such as transistors and diodes used in power supply devices, control devices and the like in all fields, regardless of whether they are for commercial or industrial use.

【0002】[0002]

【従来の技術】ダイオード等のモールドタイプの半導体
素子は使用中に温度が上昇すると、能力が低下したり、
ひどい場合は破壊したりする。
2. Description of the Related Art A mold type semiconductor element such as a diode has a decrease in capability when the temperature rises during use.
If it is terrible, it will be destroyed.

【0003】そこで従来、半導体素子を冷却するため、
熱伝導良好なアルミニウム材等を押出型等で一体的に形
成されるヒートシンクが用いられ、半導体素子はそのヒ
ートシンクの放熱部反対側に密着させるものとなってい
る。
Therefore, conventionally, in order to cool the semiconductor element,
A heat sink integrally formed of an aluminum material or the like having good heat conduction by an extrusion die is used, and the semiconductor element is closely attached to the opposite side of the heat dissipation portion of the heat sink.

【0004】そして、この密着構造により半導体素子よ
り発生する熱をヒートシンクを介して空気中へ放熱して
いる。
Due to this close contact structure, the heat generated from the semiconductor element is radiated into the air through the heat sink.

【0005】[0005]

【発明が解決しようとする課題】しかしながら、従来の
ヒートシンクは金属で形成されたものが用いられていた
ため、放熱特性を向上させるためにはその形状を大きく
する必要があり、重量及び容積が増加してしまうという
問題があった。
However, since the conventional heat sink is made of metal, it is necessary to make its shape large in order to improve the heat dissipation characteristics, which increases the weight and volume. There was a problem that it would end up.

【0006】この発明は、ヒートシンクを提供しようと
するものである。
The present invention seeks to provide a heat sink.

【0007】[0007]

【課題を解決するための手段】このため、本発明に係る
半導体素子冷却用ヒートシンクは、ヒートシンク本体内
に中空部を形成させるとともに、該中空部に、半導体素
子の発熱によって気化する液体を封入したことを特徴と
する。
Therefore, in the heat sink for cooling a semiconductor element according to the present invention, a hollow portion is formed in the heat sink body, and a liquid that is vaporized by the heat generated by the semiconductor element is sealed in the hollow portion. It is characterized by

【0008】ここで、前記液体は、常温では液体である
が、半導体素子の発熱で気化する程度の沸点を有する物
質を用いる。一般に半導体素子による発熱は略40〜100
℃であるので、その温度範囲を沸点とするような、例え
ばフロン(特にR113)、アルコール(特にメタノー
ル)、アセトン、パーフロロカーボン、水等が挙げられ
る。ヒートシンク本体の耐腐食性の見地からは水以外の
液体が好ましい。
Here, the liquid is a liquid at room temperature, but a substance having a boiling point such that it is vaporized by the heat generation of the semiconductor element is used. Generally, the heat generated by semiconductor devices is about 40-100
Since it is ℃, it is possible to cite, for example, CFCs (especially R113), alcohols (especially methanol), acetone, perfluorocarbons, water, etc., which have a boiling point in that temperature range. From the viewpoint of corrosion resistance of the heat sink body, liquids other than water are preferable.

【0009】[0009]

【作用】本発明のヒートシンク本体は、その内部が中空
となっており、そこに半導体素子の発熱によって気化す
る液体が封入される。したがって、形状を大きくして
も、本体がすべて金属で形成されるものと比較して、大
幅にその軽量化が図れるものとなっている。
The heat sink body of the present invention has a hollow interior, and a liquid that is vaporized by the heat generated by the semiconductor element is sealed therein. Therefore, even if the shape is increased, the weight can be significantly reduced as compared with the case where the main body is entirely made of metal.

【0010】このようなヒートシンクに半導体素子を取
り付けると、半導体素子の発熱によって中空部内の液体
が沸点に達し気化する。その際、気化熱を奪いつつ熱を
ヒートシンク本体放熱部に伝導させるが、伝達媒体は液
体か気体なのできわめて流動性に富み効率よく熱を伝導
させることになる。良好に伝達された熱は、放熱部から
放熱される。
When a semiconductor element is attached to such a heat sink, the heat in the semiconductor element causes the liquid in the hollow portion to reach the boiling point and vaporize. At that time, the heat of vaporization is taken away and the heat is conducted to the heat radiating portion of the heat sink body. However, since the transfer medium is a liquid or a gas, it is extremely fluid and efficiently conducts the heat. The heat that has been satisfactorily transferred is radiated from the heat radiation portion.

【0011】[0011]

【実施例】本発明の具体的実施例を図面に基づき説明す
る。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A specific embodiment of the present invention will be described with reference to the drawings.

【0012】図1は第1実施例を示すヒートシンク断面
図である。ヒートシンク本体1はアルミニウム製よりな
り、その内部はほとんどが空洞の中空部2として形成さ
れている。本体1の外表面のうち、一面は半導体素子4
の取付面となるため平面であるが、放熱部となる他の面
には、熱伝導効率を高めるため中空部2内側まで突出す
るフィン3が形成されている。前記中空部2には液状パ
ーフロロカーボン5が充填して封入される。
FIG. 1 is a sectional view of a heat sink showing a first embodiment. The heat sink body 1 is made of aluminum, and the inside thereof is formed as a hollow portion 2 which is almost hollow. One of the outer surfaces of the main body 1 is the semiconductor element 4
Although it is a flat surface because it serves as the mounting surface, the fins 3 that project to the inside of the hollow portion 2 are formed on the other surface that serves as a heat dissipation portion in order to enhance heat transfer efficiency. Liquid perfluorocarbon 5 is filled and sealed in the hollow portion 2.

【0013】図2は第2実施例を、図3は第3実施例
を、図4は第4実施例を示すヒートシンク斜視図であ
る。これらの本体1内部の構造は第1実施例と同様であ
るが、本体1外形が異なっている。すなわち、第2実施
例は第1実施例におけるフィン3をピン形にしたもので
あり、また第3実施例は本体1一方側に櫛状となる突起
6が押出成形で作られたもの、第4実施例は本体一方側
に第1実施例のフィン3をピン形にしたものである。特
に第3実施例では突起6内部、第4実施例ではフィン3
内部もそれぞれ中空となって中空部2と一体となってい
る。
FIG. 2 is a perspective view of a heat sink showing a second embodiment, FIG. 3 is a third embodiment, and FIG. 4 is a fourth embodiment. The internal structure of the main body 1 is similar to that of the first embodiment, but the outer shape of the main body 1 is different. That is, in the second embodiment, the fin 3 in the first embodiment is formed into a pin shape, and in the third embodiment, the comb-shaped projection 6 is formed on one side of the main body 1 by extrusion molding. In the fourth embodiment, the fin 3 of the first embodiment is pin-shaped on one side of the main body. Particularly, in the third embodiment, the inside of the protrusion 6 is used, and in the fourth embodiment, the fin 3 is used.
The inside is also hollow and integrated with the hollow portion 2.

【0014】以上のような本発明の実施例では、その内
部に中空部2が形成されており、そこに液状パーフロロ
カーボン5が充填して封入されているので、同形状で本
体1がすべてアルミニウムで形成されるものと比較し
て、大幅にその軽量化が図れるものとなっている。
In the embodiment of the present invention as described above, the hollow portion 2 is formed in the inside thereof, and the liquid perfluorocarbon 5 is filled and enclosed therein. The weight can be significantly reduced compared to the one formed by.

【0015】また以上の実施例に、図1に示すように半
導体素子4を取り付けると、半導体素子の発熱によって
中空部2に封入された液状パーフロロカーボン5が沸点
に達し気化する。その際、気化熱を奪いつつその熱をヒ
ートシンク本体1の放熱部であるフィン3ないし突起6
に伝導させ、そこから放熱される。この際、伝達媒体で
あるパーフロロカーボン5は液体か気体なのできわめて
流動性に富み、効率よく熱を伝導させるものとなってい
る。
When the semiconductor element 4 is attached to the above embodiment as shown in FIG. 1, the liquid perfluorocarbon 5 enclosed in the hollow portion 2 reaches the boiling point and is vaporized by the heat generation of the semiconductor element. At that time, the heat of vaporization is removed while the heat is dissipated from the fins 3 or the protrusions 6 which are the heat radiation portion of the heat sink body 1.
It is conducted to and is radiated from there. At this time, since the perfluorocarbon 5, which is a transmission medium, is a liquid or a gas, it is extremely rich in fluidity and efficiently conducts heat.

【0016】[0016]

【発明の効果】以上説明したように、本発明に係る半導
体素子冷却用ヒートシンクによれば、その形状をなんら
大きくすることなく、放熱特性を向上させることができ
る。
As described above, according to the heat sink for cooling the semiconductor device of the present invention, the heat dissipation characteristics can be improved without increasing the size of the heat sink.

【0017】仮に形状を大きくして放熱特性を更に向上
させても、内部が中空で液体が封入されているだけであ
るため大幅な軽量化が図れるものとなる。
Even if the shape is enlarged to further improve the heat dissipation property, the weight can be greatly reduced because the inside is hollow and only the liquid is enclosed.

【図面の簡単な説明】[Brief description of the drawings]

【図1】第1実施例を示す断面図である。FIG. 1 is a sectional view showing a first embodiment.

【図2】第2実施例を示す斜視図である。FIG. 2 is a perspective view showing a second embodiment.

【図3】第3実施例を示す斜視図である。FIG. 3 is a perspective view showing a third embodiment.

【図4】第4実施例を示す斜視図である。FIG. 4 is a perspective view showing a fourth embodiment.

【符号の説明】[Explanation of symbols]

1 ヒートシンク本体 2 中空部 3 フィン 4 半導体素子 5 液状パーフロロカーボン 6 突起 1 Heat sink body 2 Hollow part 3 Fin 4 Semiconductor element 5 Liquid perfluorocarbon 6 Protrusion

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】 ヒートシンク本体内に中空部を形成させ
るとともに、該中空部に、半導体素子の発熱によって気
化する液体を封入したことを特徴とする半導体素子冷却
用ヒートシンク。
1. A heat sink for cooling a semiconductor element, wherein a hollow portion is formed in a heat sink body, and a liquid which is vaporized by heat generation of the semiconductor element is enclosed in the hollow portion.
JP18668995A 1995-06-30 1995-06-30 Semiconductor element cooling heat sink Pending JPH0917920A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18668995A JPH0917920A (en) 1995-06-30 1995-06-30 Semiconductor element cooling heat sink

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18668995A JPH0917920A (en) 1995-06-30 1995-06-30 Semiconductor element cooling heat sink

Publications (1)

Publication Number Publication Date
JPH0917920A true JPH0917920A (en) 1997-01-17

Family

ID=16192920

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18668995A Pending JPH0917920A (en) 1995-06-30 1995-06-30 Semiconductor element cooling heat sink

Country Status (1)

Country Link
JP (1) JPH0917920A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2380057A (en) * 2001-09-19 2003-03-26 Thermosonic Technology Inc Heat dissipation structure with cavity for improved heat transfer
GB2406719A (en) * 2003-08-27 2005-04-06 Hewlett Packard Development Co Heat dissipation apparatus
US7040383B2 (en) 2001-08-16 2006-05-09 Nec Corporation Telecommunication device including a housing having improved heat conductivity
US7369410B2 (en) * 2006-05-03 2008-05-06 International Business Machines Corporation Apparatuses for dissipating heat from semiconductor devices
JP2016072604A (en) * 2014-09-30 2016-05-09 旭徳科技股▲ふん▼有限公司 Heat radiation module

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63182844A (en) * 1987-01-23 1988-07-28 Nec Corp Semiconductor device
JPS6417457A (en) * 1987-07-10 1989-01-20 Fujitsu Ltd Cooling fin

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63182844A (en) * 1987-01-23 1988-07-28 Nec Corp Semiconductor device
JPS6417457A (en) * 1987-07-10 1989-01-20 Fujitsu Ltd Cooling fin

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7040383B2 (en) 2001-08-16 2006-05-09 Nec Corporation Telecommunication device including a housing having improved heat conductivity
GB2380057A (en) * 2001-09-19 2003-03-26 Thermosonic Technology Inc Heat dissipation structure with cavity for improved heat transfer
GB2406719A (en) * 2003-08-27 2005-04-06 Hewlett Packard Development Co Heat dissipation apparatus
US6940718B2 (en) 2003-08-27 2005-09-06 Hewlett-Packard Development Company, L.P. Heat dissipation apparatus and method
GB2406719B (en) * 2003-08-27 2006-12-27 Hewlett Packard Development Co Heat dissipation apparatus and method
US7369410B2 (en) * 2006-05-03 2008-05-06 International Business Machines Corporation Apparatuses for dissipating heat from semiconductor devices
JP2016072604A (en) * 2014-09-30 2016-05-09 旭徳科技股▲ふん▼有限公司 Heat radiation module

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