JPH09176843A - Titanium target for magnetron sputtering - Google Patents
Titanium target for magnetron sputteringInfo
- Publication number
- JPH09176843A JPH09176843A JP33478495A JP33478495A JPH09176843A JP H09176843 A JPH09176843 A JP H09176843A JP 33478495 A JP33478495 A JP 33478495A JP 33478495 A JP33478495 A JP 33478495A JP H09176843 A JPH09176843 A JP H09176843A
- Authority
- JP
- Japan
- Prior art keywords
- target
- film
- sputtering
- blast
- magnetron sputtering
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
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- Physical Vapour Deposition (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】この発明は、長期に亘ってパ
ーティクルの少ない成膜形成が可能なマグネトロンスパ
ッタリング用Ｔｉターゲットに関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a Ti target for magnetron sputtering capable of forming a film with few particles for a long period of time.
【０００２】[0002]
【従来の技術】一般に、雰囲気ガスとしてＮ2 やＯ2 な
どの反応性ガスを用いてプラズマを発生させ、マグネッ
トによりＴｉターゲットの表面に垂直方向の磁界を印加
しながら、前記Ｔｉターゲット表面をスパッタして基体
の表面にＴｉＮ膜などのスパッタ膜を形成するマグネト
ロンスパッタリング法が知られている。このＴｉターゲ
ットを用いてマグネトロンスパッタリングを行うと、Ｔ
ｉターゲットのスパッタ面は中央部および外周縁部を除
くリング部分が溶融し、中央部および外周縁部は溶融さ
れない。Ｔｉターゲットのスパッタ面の溶融されない中
央部および外周縁部を、通常、非エロージョン部と称
し、Ｔｉターゲットのスパッタ面の中央部と外周縁部で
挟まれた溶融する部分を、通常、エロージョン部と称し
ている。マグネトロンスパッタリング中に前記非エロー
ジョン部は溶融しないため、その部分にＴｉＮなどのス
パッタ膜が形成され、非エロージョン部に形成されたス
パッタ膜が剥離脱落してシリコンウエハなどの基板上に
直径：０．３μｍ以上の粗大なパーティクルが生ずると
言われている。In general, plasma is generated using a reactive gas such as N 2 or O 2 as an atmosphere gas, while applying a magnetic field in the direction perpendicular to the surface of the Ti target by the magnet, sputtering the Ti target surface Then, a magnetron sputtering method is known in which a sputtered film such as a TiN film is formed on the surface of the substrate. When magnetron sputtering is performed using this Ti target, T
On the sputter surface of the i target, the ring portion except the central portion and the outer peripheral edge portion is melted, and the central portion and the outer peripheral edge portion are not melted. The unmelted central portion and outer peripheral edge portion of the sputtering surface of the Ti target are usually referred to as non-erosion portions, and the molten portion sandwiched between the central portion and outer peripheral edge portion of the Ti target sputtering surface is usually referred to as an erosion portion. I am calling it. Since the non-erosion portion does not melt during magnetron sputtering, a sputtered film of TiN or the like is formed on the non-erosion portion, and the sputtered film formed on the non-erosion portion is peeled off and dropped onto a substrate such as a silicon wafer with a diameter of 0. It is said that coarse particles of 3 μm or more are generated.
【０００３】このマグネトロンスパッタリング法を実施
するためのマグネトロンスパッタリング装置は、近年、
ますます大型化および高性能化し、これに伴ないスパッ
タ条件は一段と苛酷さを増す状況にあるが、上記の従来
Ｔｉターゲットを一段と苛酷な条件下でスパッタを行う
と、一層短時間の操業で成膜中に直径：０．３μｍ以上
の粗大なパーティクルが多数発生し、このため、Ｔｉタ
ーゲットの頻繁な交換を必要とするところから、スパッ
タリングの操業効率はかえって低下することがあった。A magnetron sputtering apparatus for carrying out this magnetron sputtering method has recently been used.
Although the size and performance of the sputtering equipment are becoming larger and larger, the sputter conditions are becoming more and more severe, but if the conventional Ti target is sputtered under the more severe conditions, the operation will be completed in a shorter time. A large number of coarse particles having a diameter of 0.3 μm or more were generated in the film, which required frequent replacement of the Ti target, which sometimes rather reduced the operating efficiency of sputtering.
【０００４】これを改善するために、スパッタ面の平面
リング状のエロージョン部の表面粗さを０．１〜１μｍ
Ｒａ（中心線平均粗さ）とし、残りのスパッタ面の中央
部および外周縁部で構成された非エロージョン部の表面
粗さをエロージョン部の表面粗さよりも粗い２〜５μｍ
Ｒａにしたマグネトロンスパッタリング用Ｔｉターゲッ
トが提案されている。すなわち、Ｔｉターゲットの非エ
ロージョン部の表面粗さを通常よりも粗い２〜５μｍＲ
ａに加工して、非エロージョン部に付着したＴｉＮなど
の被膜が剥離脱落しないようにしっかりと付着させ、粗
大パーティクルが発生するのを抑制したのである。そし
て上記非エロージョン部における外周縁部の角部をＲ加
工面とすることにより粗大パーティクルの発生がさらに
防止されるとしている（特開平６−３０６５９２公報参
照）In order to improve this, the surface roughness of the flat ring-shaped erosion portion of the sputter surface is 0.1 to 1 μm.
Ra (center line average roughness), and the surface roughness of the non-erosion portion constituted by the central portion and the outer peripheral edge portion of the remaining sputtering surface is 2 to 5 μm which is rougher than the surface roughness of the erosion portion.
Ra-based Ti targets for magnetron sputtering have been proposed. That is, the surface roughness of the non-erosion portion of the Ti target is 2 to 5 μm, which is rougher than usual.
By processing into a, the coating such as TiN adhered to the non-erosion portion was firmly adhered so as not to peel off and fall off, and the generation of coarse particles was suppressed. Further, it is said that the generation of coarse particles is further prevented by making the corner portion of the outer peripheral edge portion of the non-erosion portion into the R processed surface (see Japanese Patent Laid-Open No. 6-306592).
【０００５】[0005]
【発明が解決しようとする課題】上記特開平６−３０６
５９２公報記載のマグネトロンスパッタリング用Ｔｉタ
ーゲットは、確かに粗大パーティクルの発生が少なく、
優れたＴｉターゲットであるが、出力：１０ＫＷを越え
る高出力スパッタリングに対しては、スパッタ中の加熱
冷却の熱サイクルが激しく、そのためにターゲットの非
エロージョン部に堆積した付着膜が剥離し脱落すること
による粗大パーティクルの発生は避けられず、これが原
因で使用寿命に至るのが現状であった。DISCLOSURE OF THE INVENTION Problems to be Solved by the Invention
The Ti target for magnetron sputtering described in the 592 publication does not generate much coarse particles,
It is an excellent Ti target, but the output: High-power sputtering exceeding 10 KW requires a vigorous thermal cycle of heating and cooling during the sputtering, and as a result, the deposited film deposited on the non-erosion part of the target peels off and falls off. Occurrence of coarse particles due to unavoidable is inevitable, and it is the current situation that this leads to the end of service life.
【０００６】[0006]
【課題を解決するための手段】そこで、本発明者等は、
上述のような観点から、出力：１０ＫＷを越える高出力
スパッタリングを行っても成膜中の粗大パーティクルの
発生が少ないマグネトロンスパッタリング用Ｔｉターゲ
ットを開発すべく研究を行なった結果、（ａ）Ｔｉター
ゲットのスパッタ面の非エロージョン部、すなわちスパ
ッタ面の中央部および外周縁部にブラスト材粒子が打ち
込まれた状態の膜（以下、ブラスト打ち込み膜という）
を形成すると、非エロージョン部に堆積した堆積物がス
パッタ中に前記非エロージョン部から剥離しにくくなっ
て、スパッタ中の粗大パーティクルの混入が防止され
る、（ｂ）ブラスト打ち込み膜は、ＴｉＣ、ＳｉＣ、Ｔ
ｉＯ2 、ＳｉＯ2 、Ｔａ2Ｏ3 、Ａｌ2 Ｏ3 の内のいず
れかのブラスト材粒子が打ち込まれた状態の膜であるこ
とが好ましい、（ｃ）これらブラスト打ち込み膜はＴｉ
ターゲットのスパッタ面の非エロージョン部だけでな
く、Ｔｉターゲットのバッキングプレートのスパッタ面
側にも形成すると、成膜中の粗大パーティクルの形成が
一層抑制されるようになる、などの研究結果を得たので
ある。Means for Solving the Problems Accordingly, the present inventors have
From the viewpoints described above, as a result of conducting research to develop a Ti target for magnetron sputtering in which coarse particles are less likely to be generated during film formation even when high-power sputtering exceeding output: 10 KW is performed, A film in which blast material particles have been implanted into the non-erosion portion of the sputter surface, that is, the central portion and outer peripheral edge portion of the sputter surface (hereinafter referred to as the blast implantation film).
The formation of the layer makes it difficult for the deposits deposited on the non-erosion portion to separate from the non-erosion portion during sputtering, and prevents coarse particles from being mixed in during sputtering. (B) The blast-implanted film is made of TiC or SiC. , T
iO 2, SiO 2, Ta 2 O 3, it is preferable either blast material particles of the Al 2 O 3 is film in the state they were implanted, (c) These blasting implants films Ti
We have obtained research results such that formation of coarse particles during film formation can be further suppressed by forming not only on the non-erosion part of the sputtering surface of the target but also on the sputtering surface side of the backing plate of the Ti target. Of.
【０００７】この発明は、上記の研究結果にもとづいて
なされたものであって、（１）Ｔｉターゲットのスパッ
タ面中央部および外周縁部の非エロージョン部にブラス
ト打ち込み膜が形成されているマグネトロンスパッタリ
ング用Ｔｉターゲット、（２）Ｔｉターゲットのスパッ
タ面の非エロージョン部およびＴｉターゲットをバック
アップするバッキングプレートのスパッタ面の側にブラ
スト打ち込み膜が形成されているマグネトロンスパッタ
リング用Ｔｉターゲット、に特徴を有するものである。The present invention has been made on the basis of the above-mentioned research results. (1) Magnetron sputtering in which a blast-implanted film is formed on the non-erosion portion of the sputtering target center portion and outer peripheral edge portion of a Ti target. Ti target for sputtering, (2) Ti target for magnetron sputtering in which a blast-implanted film is formed on the non-erosion part of the sputtering surface of the Ti target and on the sputtering surface side of the backing plate that backs up the Ti target. is there.
【０００８】上記ブラスト打ち込み膜は、ＴｉＣ、Ｓｉ
Ｃ、ＴｉＯ2 、ＳｉＯ2 、Ｔａ2 Ｏ 3 、Ａｌ2 Ｏ3 の内
のいずれかのブラスト材粒子が楔状に打ち込まれた状態
でブラスト材粒子の頭が露出した膜であることが最も好
ましい。The blast-implanted film is made of TiC, Si.
C, TiOTwo, SiOTwo, TaTwoO Three, AlTwoOThreeWithin
One of the blast material particles is driven into a wedge shape
It is most preferable that the head of the blast material particles is exposed.
Good.
【０００９】この発明のＴｉターゲットにおいて、非エ
ロージョン部にブラスト打ち込み膜を形成すると、出
力：１０ＫＷを越える高出力スパッタリングを行っても
成膜中の粗大パーティクルの発生が少なくなる理由とし
て、ブラスト打ち込み膜は表面にブラスト材粒子が楔状
に打ち込まれ、ブラスト材粒子の頭が露出した状態にあ
るために、スパッタ生成堆積物はアンカー状に強固に固
着され、それによってスパッタ中にはスパッタ生成堆積
物がＴｉターゲットから剥離落下しないことによるもの
と考えられる。In the Ti target of the present invention, when the blast-implanted film is formed in the non-erosion portion, the reason why the generation of coarse particles during the film formation is reduced even if the high-power sputtering exceeding the output: 10 KW is performed is reduced. Since the blast material particles are struck in a wedge shape on the surface and the heads of the blast material particles are exposed, the sputter-produced deposits are firmly anchored in an anchor-like manner, which causes sputter-produced deposits during spatter. It is considered that this is because the Ti target did not peel off.
【００１０】[0010]
【発明の実施の形態】ターゲットスパッタ部として、直
径：２５０mm×厚さ：１０mmの寸法をもった純度：９
９．９９９％純Ｔｉ円板を用意し、さらに冷却用罰金具
プレートとして、直径：３５０mm×厚さ：１５mmの寸法
をもったアルミニウム合金（ＪＩＳ Ａ５０５２）製円
板を用意した。この純Ｔｉ円板をアルミニウム合金製円
板に拡散接合してターゲット基体を作製し、このターゲ
ット基体の純Ｔｉ円板の非エロージョン部およびアルミ
ニウム合金製円板のスパッタ面側に表１に示される組成
のブラスト材粒子をブラスト圧力：６ｋｇ／ｃｍ2 で打
ち込むことにより、表１に示される被覆率（ブラスト材
粒子が１ｃｍ2 に食い込んだ面積）のブラスト打ち込み
膜を形成し、本発明Ｔｉターゲット１〜７を作製した。BEST MODE FOR CARRYING OUT THE INVENTION As a target sputter part, a purity of 9 with a diameter of 250 mm and a thickness of 10 mm.
A 9.999% pure Ti disk was prepared, and an aluminum alloy (JIS A5052) disk having dimensions of diameter: 350 mm × thickness: 15 mm was prepared as a cooling metal plate. This pure Ti disc is diffusion-bonded to an aluminum alloy disc to prepare a target substrate, and the non-erosion portion of the pure Ti disc of this target substrate and the sputter surface side of the aluminum alloy disc are shown in Table 1. By injecting the blast material particles having the composition at a blast pressure of 6 kg / cm 2 , a blast-implanted film having a coverage rate (area in which the blast material particles dig into 1 cm 2 ) shown in Table 1 is formed, and the Ti target 1 of the present invention 1 ~ 7 were produced.
【００１１】比較のために、ターゲット基体の純Ｔｉ円
板の非エロージョン部の表面粗さを３．５μｍＲａとし
た従来Ｔｉターゲットを用意した。For comparison, a conventional Ti target in which the surface roughness of the non-erosion portion of the pure Ti disk of the target substrate was 3.5 μmRa was prepared.
【００１２】これら本発明Ｔｉターゲット１〜７および
従来Ｔｉターゲットを直流マグネトロンスパッタリング
装置に装入し、出力：１２ＫＷ、雰囲気：Ａｒ／Ｎ2 ＝
１：１の気流中、スパッタ圧力：８ｍＴｏｒｒ、スパッ
タ時間：２分／ウエハの条件で、直径：１５０mmの平面
円形のＳｉウエハの表面に０．５μｍのＴｉＮ成膜を形
成する操作を繰り返し行ない、ＴｉＮ成膜中に存在する
直径：０．２μｍ以上のパーティクル数をパーティクル
カウンターを用い、レーザー光を当てて観察し、前記成
膜中に前記パーティクルが１００個／ウエハを越えるに
至るまでのＳｉウエハ枚数を測定した。これらの測定結
果を表１に示した。These Ti targets 1 to 7 of the present invention and the conventional Ti target were loaded into a DC magnetron sputtering apparatus, and output: 12 kW, atmosphere: Ar / N 2 =
An operation of forming a TiN film having a thickness of 0.5 μm on the surface of a flat circular Si wafer having a diameter of 150 mm is repeated under the conditions of a sputtering pressure of 8 mTorr and a sputtering time of 2 minutes / wafer in a 1: 1 air flow. SiN wafer existing during TiN film formation: The number of particles having a diameter of 0.2 μm or more is observed by irradiating a laser beam with a particle counter, and the number of the particles exceeds 100 particles / wafer during the film formation. The number of sheets was measured. Table 1 shows the results of these measurements.
【００１３】[0013]
【表１】 [Table 1]
【００１４】[0014]
【発明の効果】表１に示される結果から、ターゲット基
体の純Ｔｉ円板の非エロージョン部およびアルミニウム
合金製円板のスパッタ面側にブラスト打ち込み膜を形成
した本発明Ｔｉターゲット１〜７は、ブラスト打ち込み
膜を形成しない従来Ｔｉターゲットと比較して、直径：
０．２μｍ以上のパーティクルが１００個／ウエハを越
えるに至るまでのＳｉウエハ枚数が多く、パーティクル
が発生しにくいことが分かる。したがって、この発明の
Ｔｉターゲットは、１０ＫＷを越える苛酷な条件での高
出力スパッタでも成膜中にパーティクルが多発するのを
長期に亘って抑制することができるので、マグネトロン
スパッタリング装置の大型化および高性能化に十分満足
に対応でき、長い使用寿命を示すものである。From the results shown in Table 1, the Ti targets 1 to 7 of the present invention in which the blast-implanted film is formed on the non-erosion portion of the pure Ti disk of the target substrate and on the sputtering surface side of the aluminum alloy disk are Compared with the conventional Ti target that does not form a blast-implanted film, the diameter:
It can be seen that the number of Si wafers until the number of particles of 0.2 μm or more exceeds 100 / wafer is large, and particles are hard to be generated. Therefore, the Ti target of the present invention can suppress the generation of many particles during film formation for a long period even in high power sputtering under severe conditions exceeding 10 KW, and thus the magnetron sputtering apparatus can be made large and high in size. It has a long service life and can fully satisfy performance improvement.
Claims (3)
び外周縁部の非エロージョン部にブラスト材粒子が打ち
込まれた状態の膜（以下、ブラスト打ち込み膜という）
が形成されていることを特徴とするマグネトロンスパッ
タリング用Ｔｉターゲット。1. A film in which blast material particles are implanted into a non-erosion portion of a central portion and an outer peripheral edge portion of a Ti target (hereinafter referred to as a blast implantation film).
A Ti target for magnetron sputtering, wherein:
び外周縁部の非エロージョン部並びにバッキングプレー
トのスパッタ面側にブラスト打ち込み膜が形成されてい
ることを特徴とするマグネトロンスパッタリング用Ｔｉ
ターゲット。2. A Ti for magnetron sputtering, characterized in that a blast-implanted film is formed on the non-erosion part of the center and outer peripheral part of the sputtering target and on the sputtering surface side of the backing plate.
target.
ｉＣ、ＴｉＯ2 、ＳｉＯ2 、Ｔａ2 Ｏ3 、Ａｌ2 Ｏ3 の
内のいずれかのブラスト材粒子が打ち込まれた状態の膜
であることを特徴とする請求項１または２記載のマグネ
トロンスパッタリング用Ｔｉターゲット。3. The blast-implanted film comprises TiC, S
The magnetron sputtering according to claim 1 or 2, which is a film in which blast material particles of any one of iC, TiO 2 , SiO 2 , Ta 2 O 3 , and Al 2 O 3 are implanted. Ti target.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP33478495A JP3407518B2 (en) | 1995-12-22 | 1995-12-22 | Ti target for magnetron sputtering |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP33478495A JP3407518B2 (en) | 1995-12-22 | 1995-12-22 | Ti target for magnetron sputtering |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH09176843A true JPH09176843A (en) | 1997-07-08 |
| JP3407518B2 JP3407518B2 (en) | 2003-05-19 |
Family
ID=18281202
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP33478495A Expired - Lifetime JP3407518B2 (en) | 1995-12-22 | 1995-12-22 | Ti target for magnetron sputtering |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3407518B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002180243A (en) * | 2000-12-11 | 2002-06-26 | Toshiba Corp | Titanium sputtering target and manufacturing method therefor |
| WO2005077677A1 (en) * | 2004-02-09 | 2005-08-25 | Honeywell International, Inc. | Physical vapor deposition components, and methods of treating components |
-
1995
- 1995-12-22 JP JP33478495A patent/JP3407518B2/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002180243A (en) * | 2000-12-11 | 2002-06-26 | Toshiba Corp | Titanium sputtering target and manufacturing method therefor |
| WO2005077677A1 (en) * | 2004-02-09 | 2005-08-25 | Honeywell International, Inc. | Physical vapor deposition components, and methods of treating components |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3407518B2 (en) | 2003-05-19 |
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