JPH0915625A - Production of liquid crystal display device - Google Patents

Abstract

PURPOSE: To improve the aperture rates of respective pixel electrodes while obtaining a good contrast ratio. CONSTITUTION: This process is provided with a stage for forming a light transparent array substrate 1a having the plural pixel electrodes 7, driving circuits arranged on the circumferential regions of the pixel electrodes 7, plural storage capacitor lines 2 disposed to be insulated and opposite from and to the outer peripheral parts of the respective corresponding pixel electrodes 7, insulating light shielding layers 18 for shielding the leaking light via the circumferential regions of the pixel electrodes 7 and a first oriented film 8a covering the plural pixel electrodes 7 and the light shielding layers 18, a stage for forming a light transparent counter substrate 1b having common electrodes 9 and a second oriented film 8b covering the common electrodes 9, a stage for integrating the array substrate 1a and the counter substrate 1b by holding a liquid crystal compsn. layer between the substrates, and is further provided with a stage for forming the driving circuits and the storage capacitance lines 2 on a transparent insulating substrate in the forming stage of the array substrate, a stage for forming the insulatable light shielding layers 18 selectively covering the driving circuits on the front surface of the transparent insulating substrates and a stage for forming the plural pixel electrodes 7 by using the insulatable light shielding layers 18 as a mask.

Description

Detailed Description of the Invention

The present invention relates to a method of manufacturing a liquid crystal display device in which a light shielding layer is formed on an array substrate.

[0002]

2. Description of the Related Art In recent years, liquid crystal display devices having the great advantages of thinness, light weight and low power consumption have been positively used as video display devices for personal office automation (OA) equipment such as Japanese word processors and desktop personal computers or televisions. It is used for. In particular, active matrix type liquid crystal display devices have been actively developed because they can realize high resolution display.

A general active matrix type liquid crystal display device has an array substrate and a counter substrate each having an insulating property and a light transmitting property, and a liquid crystal layer held between the array substrate and the counter substrate facing each other in parallel. On the array substrate side, a plurality of pixel electrodes are formed on the glass plate in a matrix shape, a plurality of row lines and column lines are formed along rows and columns of the plurality of pixel electrodes, and a plurality of TFTs are formed.
(Thin Film Transistor) is provided as a switching element for driving one of these pixel electrodes at a position where two signal lines intersect with each other, and the first alignment film includes a plurality of TFTs, a plurality of pixel electrodes, and a plurality of pixel electrodes. It is formed to entirely cover the matrix array. On the counter substrate side, a common electrode is formed on the glass plate corresponding to the entire plurality of pixel electrodes, and a second alignment film is formed to cover the common electrode. The liquid crystal layer is composed of a liquid crystal material in which liquid crystal molecules are set substantially parallel to each other on the axis in the thickness direction of the liquid crystal layer when there is no potential difference between the pixel electrode and the common electrode. The first and second alignment films are each subjected to alignment treatment after film formation in order to obtain twisted nematic (TN) alignment in which liquid crystal molecules aligned on the axis in the thickness direction of the liquid crystal layer are twisted. These alignment treatments are usually performed so that the orientation of the liquid crystal molecules near the array substrate and the orientation of the liquid crystal molecules near the counter substrate are deviated by 90 degrees. When polarized light enters the liquid crystal layer from one substrate side, this polarized light turns along the twist of the liquid crystal molecules arranged on the axis in the thickness direction of the liquid crystal layer, is guided to the other substrate, and is further polarized by a polarizing plate. It is selected whether the polarized light is transmitted or shielded. When a potential difference is applied between the pixel electrode and the common electrode, most of the liquid crystal molecules tilt up from the plane parallel to the substrate surface which is the display surface. This tilt-up angle increases in proportion to the applied potential difference, and reduces the transmittance of polarized light. Such a liquid crystal display device has a black matrix (BM) provided on the counter substrate side as a light blocking layer that blocks light leaking from the periphery of the plurality of pixel electrodes on the array substrate side.

When the black matrix shifts with respect to the peripheral area of the pixel electrodes where the row lines, the column lines, and the TFTs are formed, part of the leaked light passes through the counter substrate without being blocked by the black matrix. become. In order to prevent this, the black matrix is usually formed so as to overlap the pixel electrode by a margin that absorbs a misalignment that occurs when the counter substrate and the array substrate face each other. In recent years, the increase in the total number of pixels of liquid crystal display devices has been achieved by miniaturization of pixel electrodes. The ratio of the area of the pixel electrode portion shielded by the black matrix to the total area of each pixel electrode increases with the miniaturization of the pixel electrode. Therefore, it is considered that the black matrix has a margin for absorbing misalignment between the substrates as a factor for lowering the aperture ratio of each pixel electrode.

[0005]

At present, the BM-on-array type is drawing attention as a technique for solving such a problem. In this BM on array type, a black matrix is formed on the array substrate side. In this case, since it is not necessary to provide the black matrix with a margin for absorbing misalignment between the substrates, the area of the black matrix can be limited to a necessary minimum value close to the area of the peripheral region of the pixel electrode. As this black matrix material, an organic insulating material such as a resin is used not only to have a light-shielding property but also to prevent the floating capacitance on the array substrate and the pixel electrode from being electrically affected.

According to the consideration of the present inventor, when an organic insulating material is used, the thickness of the black matrix must be considerably increased in order to obtain a good contrast ratio, which is a disclination line. Will be generated in the liquid crystal layer on the pixel electrode. It is conceivable to provide another light shielding layer to hide the disclination line, but this reduces the aperture ratio of each pixel electrode.

An object of the present invention was made in view of such conventional circumstances, and it is an object of the present invention to provide a method of manufacturing a liquid crystal device capable of improving the aperture ratio of each pixel electrode while obtaining a good contrast ratio. is there.

According to the present invention, a plurality of pixel electrodes, a drive circuit arranged in a peripheral region surrounding each of the pixel electrodes and driving the pixel electrodes, and insulated from and opposed to an outer peripheral portion of each corresponding pixel electrode, A plurality of storage capacitance lines that store electric charges by capacitive coupling with electrodes, an insulating light-shielding layer that shields light leaking through the peripheral regions of the plurality of pixel electrodes, and a first alignment that covers the plurality of pixel electrodes and the light-shielding layer Forming a light-transmitting array substrate having a film, forming a light-transmitting counter substrate having a common electrode and a second alignment film covering the common electrode, and placing the first and second alignment films inside The array substrate and the counter substrate are opposed to each other and the liquid crystal composition layer is held between these substrates to be integrated with each other. The step of forming the array substrate includes a drive circuit and a storage capacitor line on the transparent insulating plate. A liquid crystal display device including a forming step, a step of forming an insulating light-shielding layer that selectively covers the drive circuit on the surface of the transparent insulating plate, and a step of forming a plurality of pixel electrodes by using the insulating light-shielding layer as a mask. A method of manufacturing the same is provided.

[0009]

In this method of manufacturing a liquid crystal display device, the light shielding layer is used as a mask for forming a plurality of pixel electrodes, and the pixel electrodes are self-aligned with the light shielding layer.
This can eliminate the overlap between the pixel electrode and the light shielding layer and improve the aperture ratio of each pixel electrode.

The present inventor has simulated a disclination line generated in a liquid crystal layer due to the influence of a light-shielding layer formed on an array substrate so as to overlap a part of a pixel electrode. In this simulation, the Frank's elastic free energy and electrical energy that determine the alignment direction of liquid crystal molecules are solved by the finite element method to find the alignment direction of the liquid crystal molecules in the electric field, and determine the position where the disclination line is generated. It is something to analyze. FIG. 11 shows the result of this simulation. In this figure, the light shielding layer is represented by BM. From this simulation result,
The present inventor has considered canceling the disclination line by providing a storage capacitor line that faces a part of the pixel electrode and that stores charges by capacitive coupling with the pixel electrode.

Further, in the analysis of the simulation result, the position where the disclination line is generated is the light shielding layer B.
It was found that it depends on the overlapping width of M and the pixel electrode 7. FIG. 12 shows a cross-sectional structure of the liquid crystal display device for one pixel, and FIG. 13 shows the relationship between the overlapping width of the light shielding layer BM and the pixel electrode 7 and the generation position of the discrimination line, and the height of the light shielding layer BM is changed. The results are shown below. Here, the height of the light shielding layer BM was changed in the range from 0.5 to 3.0 μm, and the position where the disclination line was generated was examined as the distance from the end of the pixel electrode. As can be seen from this figure, the position where the disclination line is generated approaches the pixel electrode end as the overlapping width of the light shielding layer BM and the pixel electrode decreases regardless of the height of the light shielding layer BM. Therefore, by setting the overlapping width of the light shielding layer BM and the pixel electrode as small as possible, it becomes possible to generate the disclination line near the end portion of the pixel electrode.

By the way, conventionally, since the light shielding layer BM is formed by a photography method using a resist pattern as a mask after the pixel electrode is formed, the overlapping width of the light shielding layer BM and the pixel electrode is likely to change due to a mask alignment error. The storage capacitor line needs to be formed in a wide area so that it can cope with the case where the overlapping width is maximum. On the other hand, in the present invention, since the pixel electrode is self-aligned with the light shielding layer BM, it is possible to eliminate the variation in the overlapping width of the light shielding layer BM and the pixel electrode. That is, when the transparent conductive layer is deposited on the entire light-shielding layer BM and the exposed region, the transparent conductive layer becomes discontinuous at the end of the light-shielding layer BM due to the step between the light-shielding layer BM and the exposed region. By removing the transparent conductive layer on the light shielding layer BM while leaving the upper transparent electrode layer, a pixel electrode self-aligned with the light shielding layer can be easily obtained. Furthermore, since the overlapping width of the light shielding layer BM and the pixel electrode is minimized, it is possible to sufficiently limit the formation range of the storage capacitance line to the vicinity of the end portion of the pixel electrode.

[0013]

DESCRIPTION OF THE PREFERRED EMBODIMENTS A liquid crystal display device according to an embodiment of the present invention will be described below with reference to the drawings. This liquid crystal display device operates on the principle described in the prior art, and is manufactured in the BM on array format.

In this liquid crystal display device, an array substrate and a counter substrate each having an insulating property and a light transmitting property, a liquid crystal layer held between the array substrate and the counter substrate facing in parallel, and an array substrate on the side opposite to the liquid crystal layer. And a first polarizing plate and a second polarizing plate which are attached to the counter substrate, respectively.

The array substrate includes a transparent insulating plate, a matrix array of a plurality of pixel electrodes, a driving circuit for these pixel electrodes, a black matrix (light shielding layer), a plurality of storage capacitance lines, and a first alignment film. The plurality of pixel electrodes are formed on one surface of the transparent insulating plate with wiring intervals. The drive circuit has multiple row lines, multiple column lines, and multiple thin film transistors (TFTs).
anistor), and is formed in a peripheral region surrounding each of the plurality of pixel electrodes. The plurality of row lines are formed along the rows of the plurality of pixel electrodes, respectively. The plurality of column lines are formed along the columns of the plurality of pixel electrodes, respectively. The multiple TFTs are
The plurality of pixel electrodes are formed near positions where a plurality of row lines and a plurality of column lines intersect, and selectively drive a plurality of pixel electrodes. Each TFT has a source connected to a corresponding pixel electrode, a drain connected to a corresponding column line, and a gate electrode insulated from a channel between the source and the drain and connected to a corresponding row line. A switching element that supplies the drive signal supplied via the column line to the corresponding pixel electrode in response to the scan signal supplied by the switching element. The black matrix is formed so as to cover a peripheral region of the pixel electrode in which the drive circuit is arranged, and blocks light leaking through the peripheral region. Each storage capacitance line is a U-shaped conductive line that is insulated and opposed to the corresponding pixel electrode portion adjacent to the black matrix. The storage capacitance line has a width corresponding to the position of the disclination line generated in the liquid crystal layer when the drive signal is applied to the pixel electrode without providing the storage capacitance line, and the capacitive coupling with the pixel electrode is performed. The electric charges are accumulated by the electric charges, and the disclination line is canceled by the accumulated electric charges. The first alignment film is formed so as to entirely cover the matrix array of the plurality of pixel electrodes, the plurality of row lines, the plurality of column lines, the black matrix, and the plurality of storage capacitance lines. The counter substrate includes a transparent insulating plate, a common electrode, and a second alignment film. The common electrode is formed on one surface of the transparent insulating plate corresponding to the matrix array of a plurality of pixel electrodes on the array substrate side. The second alignment film is formed so as to entirely cover the common electrode. The liquid crystal layer is composed of a liquid crystal composition in which liquid crystal molecules are set substantially parallel to each other on the axis in the thickness direction of the liquid crystal layer when there is no potential difference between the pixel electrode and the common electrode. The alignment directions of the first and second alignment films are set so that the liquid crystal molecules aligned on the axis of the thickness direction of the liquid crystal layer are offset from each other by 90 degrees in order to obtain twisted twisted nematic (TN) alignment.

Here, the structure of the liquid crystal display device will be described in more detail. FIG. 1A shows a partial planar structure of this liquid crystal display device, and FIG. 1B shows a partial sectional structure of this liquid crystal display device. The gate electrode 4G of the TFT has a width of 10 μm.
m and length 50 μm, and is formed on the transparent insulating plate 1 a. The storage capacitance line 2 is set to have a width of 6 μm. The first signal line and the second signal line are insulated from each other by the silicon oxide layer 11 formed as an interlayer insulating film. Source electrode 5
The S and drain electrodes 6D are formed in the amorphous silicon film 13 formed on the gate electrode 4G. The amorphous silicon film 13 has a width of 25 μm and a length of 40
It is set to μm. The source electrode 5S and the drain electrode 6D are set to have a width of 15 μm and a length of 30 μm. The pixel pitch, that is, the interval between the pixel electrodes is 100 on the second signal line side.
μm, and the first signal line side is set to 300 μm. The black matrix 18 partially overlaps the storage capacitance line 2, but does not overlap the pixel electrode 7. The overlapping width of the pixel electrode 7 and the storage capacitance line 2 is set to 3 μm on the second signal line side and 5 μm on the first signal line side. The first and second alignment films 7a have a pretilt angle of 2 degrees.

Next, the manufacturing process of this liquid crystal display device will be described.

In the step of forming the array substrate, the glass plate 1a is prepared as a transparent insulating plate. Subsequently, a metal layer having a thickness of 250 nm is formed on the glass plate 1a by depositing a MoTa alloy by a sputtering method. This metal layer is selectively patterned by chemical dry etching (CDE) using the resist pattern as a mask. In this etching process, the metal layer is removed from the glass plate 1a, leaving the portions used as the storage capacitance line 2, the first signal line 3 and the gate electrode 4G shown in FIGS. 2A and 2B.

After the storage capacitance line 2, the first signal line 3 and the gate electrode 4G are formed, a two-layer silicon oxide film 11 having a total thickness of 350 nm is formed as shown in FIGS. 3 (A) and 3 (B).
It is formed on the exposed portion of the storage capacitor line 2, the first signal line 3, the gate electrode 4G, and the glass plate by depositing a kind of SiOx by the atmospheric pressure thermal CVD method at a substrate temperature of 400 ° C.

After forming the two-layer silicon oxide film 11, the silicon nitride film 12a, the amorphous silicon film 13, and the silicon nitride film 12b are formed by plasma CVD at a substrate temperature of 350 ° C. as shown in FIGS. 4 (A) and 4 (B). First SiN
It is formed on the silicon oxide film 13 by sequentially depositing x, a-Si, and second SiNx. The silicon nitride film 12b is selectively patterned by an etching process using a resist pattern as a mask.
In this etching process, the silicon nitride film 12b is converted into TF.
The amorphous silicon film 13 is removed, leaving a portion of the T used as the channel protection film. A solution containing hydrofluoric acid (HF) as a main component is used as the etching liquid. This also serves to remove the insulator when it is formed on the surface of the amorphous silicon film 13 by natural oxidation.

After forming the channel protective film, an n + silicon film 15 having a thickness of 50 nm is formed on the amorphous silicon film 13 and the channel protective film by plasma CVD as shown in FIGS. Thickness 50n
A Mo film 14 of m is formed on the n + silicon film 15. Mo film 14 is chemical dry etching (CDE)
Is patterned by. In this etching process,
The Mo film 14 is removed from the n + silicon film 15 except the portions used as the source and drain electrodes of the TFT. The etching solution for the Mo film 14 is nitric acid,
A mixed solution of phosphoric acid and acetic acid is used. The n + silicon film 15 is used to make ohmic contact with the amorphous silicon film 13 for the source electrode and the drain electrode.

After forming the source electrode and the drain electrode,
The 50 nm thick Cr film and the 50 nm thick Ti film are C
It is formed on the source electrode, the drain electrode, and the n + silicon film 15 by sequentially depositing r and Ti by the sputtering method. These Cr film and Ti film are selectively patterned by etching. Cr
The film is etched with a mixed solution of nitric acid, phosphoric acid and acetic acid, and the Ti film is etched with a cerium ammonium nitrate solution. In this etching process, Cr film and Ti
The film is removed from the source electrode, the drain electrode, and the n + silicon film 15 except the portion used as the signal line 16. The n + silicon film 15 is shown in FIGS. 6 (A) and 6 (B).
As shown in, the patterning is performed by CDE using the source electrode 5S and the drain electrode 6D as a mask.
In this CDE, the n + silicon film 15 is removed from the amorphous silicon film 13 and the channel protective film except the portions corresponding to the source electrode and the drain electrode.

After patterning the n + silicon film 15, a 200-nm-thick silicon nitride film 17 is formed on the source electrode, the drain electrode, the channel protective film, and the amorphous silicon film 13 by plasma CVD. This silicon nitride film 17 is patterned by CDE. This CD
In E, the silicon nitride film 17 is shown in FIGS.
As shown in, the amorphous silicon film 13 and a part of the drain electrode 6D are removed except the part used as the passivation film covering the source electrode, the drain electrode, and the channel protection film.

After forming the passivation film, the thickness is 2 μm.
The resin film 18 is entirely formed on the passivation film and the amorphous silicon film 13. This resin film 1
Reference numeral 8 is made of an acrylic resin containing 30 wt% of a black mixed pigment in order to obtain a light shielding property. This resin film 18 is shown in FIG.
As shown in (A) and (B), it is selectively patterned by photolithography. In this photolithography, the resin film 18 is removed leaving a portion used as a black matrix 18 that masks the peripheral region of the plurality of pixel electrodes, that is, the row lines, column lines, and the grid-shaped region in which the TFTs are arranged. In this process, a plurality of exposed regions which are not masked by the black matrix 18 and are arranged in a matrix are defined as the pixel electrode formation regions.

After forming the black matrix 18, the thickness 1
A 00 nm transparent conductive layer is formed on the black matrix 18 and the exposed regions by, for example, depositing ITO (indium titanium oxide) by a sputtering method. Since the thickness of the transparent conductive layer is smaller than the thickness of the black matrix 18, the transparent conductive layer becomes discontinuous on the end surface of the black matrix 18 due to the step between the black matrix 18 and the exposed region.

The transparent conductive layer of ITO is patterned by photolithography. In this photolithography, only the transparent conductive layer portion on the black matrix 18 is etched by using an aqua regia-based etching solution, and the transparent conductive layer portion on the exposed surface is formed into a pixel as shown in FIGS. 9 (A) and 9 (B). It is left as the electrode 7. Even if the ITO is not completely removed from the black matrix 18 and remains, the ITO does not have an electrical effect on the pixel electrode because the ITO is already physically isolated from the pixel electrode.

After forming the pixel electrodes, the alignment film 8a is formed by forming a polyimide thin film having a thickness of 100 nm to cover the matrix array of the pixel electrodes and the black matrix 18, and further rubbing the surface thereof.

In the step of forming the counter substrate, the glass plate 11b is prepared as a transparent insulating plate, and a transparent conductive layer having a thickness of 100 nm is formed as a common electrode 9 on the glass plate 11b by depositing ITO, for example, by a sputtering method. It After forming the common electrode 9, the alignment film 8b is formed by forming a polyimide thin film having a thickness of 100 nm to cover the common electrode 9 and further rubbing the surface thereof.

FIG. 10 shows a process of integrating the array substrate and the counter substrate thus formed. In this step, the epoxy adhesive is applied by a printing process along the outer periphery of the alignment film 8a on the array substrate side, except for the portion left as the liquid crystal injection port. After the application of the adhesive, a gap material having a particle diameter of 5 μm (for example, Sekisui Fine Chemical Co., Ltd., trade name Micropearl) is dispersed on the surface of the alignment film 8a. After the dispersion of the gap material, the counter substrate is stacked on the array substrate with the alignment films 8a and 8b inside. When the counter substrate and the array substrate are opposed to each other in this way, the rubbing directions of the alignment films 8a and 8b for aligning the liquid crystal molecules on the array substrate side and the counter substrate side are set to be offset from each other by an angle of 90 degrees. In this state, the array substrate and the counter substrate are subjected to a heat treatment for curing the adhesive to be bonded and integrated with each other.

After this heat treatment, the liquid crystal layer material is injected from the injection port by a usual method, and the injection port is sealed with the ultraviolet curable resin. This liquid crystal layer material is, for example, a liquid crystal material (E.
It is a general liquid crystal composition obtained by adding 0.1% by weight of a chiral material (E. Merck, trade name S811) to Merck, trade name ZLI-1565). The first and second polarizing plates are attached to the outside of the array substrate 1 and the counter substrate 2 which hold the liquid crystal layer 3 in this way.

The liquid crystal display device is completed through the above steps. When the position where the disclination line is generated in the liquid crystal display device is examined, the disclination line is located 0.5 μm from the end of the pixel electrode on the column line side and 3 μm from the end of the pixel electrode on the row line side. It was confirmed that the occurrence position of was coming. That is,
The manufacturing method of the present embodiment can efficiently manufacture a liquid crystal display device having a large aperture ratio with a high yield.

On the other hand, when the liquid crystal display device having the same size as that of the above-described embodiment is formed with the black matrix after the pixel electrode is formed by the conventional manufacturing method, the pixel electrode and the black matrix have a positional relationship such that they do not overlap each other. Despite the design, this overlap occurred in many liquid crystal display devices, and there were many variations. In addition, when the position where the disclination line was generated was investigated, there were several liquid crystal display devices in which the disclination line was generated in the pixel electrode area that did not overlap the black matrix. 5 μm from the edge of the pixel electrode on the side, and 8 from the edge of the pixel electrode on the row line side.
It was confirmed that it would come to a place separated by μm.

Therefore, the liquid crystal display device of the comparative example had a very poor yield.

Although the black matrix 18 can play a role of passivation on the active element, when a separate passivation film is formed as in the embodiment,
The characteristics of the active element can be made more stable.

[0035]

According to the manufacturing method of the present invention, it is possible to improve the aperture ratio of each pixel electrode while obtaining a high contrast ratio which does not become non-uniform or deteriorate even when displayed for a long time.

[Brief description of the drawings]

FIG. 1 shows a plane and sectional structure of a liquid crystal display device according to an embodiment of the present invention.

FIG. 2 is a diagram showing a first manufacturing process of the liquid crystal display device shown in FIG.

FIG. 3 is a diagram showing a second manufacturing process of the liquid crystal display device shown in FIG. 1.

FIG. 4 is a diagram showing a third manufacturing process of the liquid crystal display device shown in FIG.

5 is a diagram showing a fourth manufacturing process of the liquid crystal display device shown in FIG. 1. FIG.

6 is a diagram showing a fifth manufacturing process of the liquid crystal display device shown in FIG. 1. FIG.

FIG. 7 is a diagram showing a sixth manufacturing process of the liquid crystal display device shown in FIG. 1.

FIG. 8 is a diagram showing a seventh manufacturing process of the liquid crystal display device shown in FIG. 1.

9 is a diagram showing an eighth manufacturing step of the liquid crystal display device shown in FIG.

10 is a diagram showing a process of integrating an array substrate and a counter substrate of the liquid crystal display device shown in FIG.

FIG. 11 is a diagram showing a result of simulation in which a generation position of a disclination line is analyzed.

FIG. 12 is a diagram illustrating a cross-sectional structure of a liquid crystal display device regarding one pixel.

FIG. 13 is a diagram showing the results of examining the relationship between the overlapping width of the light-shielding layer and the pixel electrode and the position where the discrimination line is generated by changing the height of the light-shielding layer.

[Explanation of symbols]

1a ... Transparent insulating plate, 2 ... Storage capacitance line, 4G ... Gate electrode, 5S ... Source electrode, 6D ... Drain electrode, 7 ... Pixel electrode, 8a ... Alignment film, 10 ... Liquid crystal layer, 18 ... Black matrix.

Claims (3)

[Claims] 1. A plurality of pixel electrodes, a drive circuit which is arranged in a peripheral region surrounding each of these pixel electrodes and drives these pixel electrodes, and a capacitance with each pixel electrode which is insulated and opposed to an outer peripheral portion of each corresponding pixel electrode. A plurality of storage capacitance lines that store electric charges by dynamic coupling, an insulating light-shielding layer that shields light leaking through the peripheral regions of the plurality of pixel electrodes, and a first alignment film that covers the plurality of pixel electrodes and the light-shielding layer Forming a light-transmitting array substrate, forming a light-transmitting counter substrate having a common electrode and a second alignment film covering the common electrode, and arraying the first and second alignment films inside A step of forming a drive circuit and a storage capacitor line on a transparent insulating plate is provided by facing the substrate and the counter substrate and holding the liquid crystal composition layer between these substrates to integrate them. And a step of forming an insulating light-shielding layer that selectively covers the drive circuit on the surface of the transparent insulating plate, and a step of forming a plurality of pixel electrodes using the insulating light-shielding layer as a mask. Production method. 2. The plurality of pixel electrodes are a matrix array, and the driving circuit is arranged along a plurality of row lines arranged along a row of the plurality of pixel electrodes and a column of the plurality of pixel electrodes. 2. The method for manufacturing a liquid crystal display device according to claim 1, further comprising a plurality of column lines, and an active element connected to each corresponding pixel electrode and driven by a pair of row lines and column lines. 3. The method of manufacturing a liquid crystal display device according to claim 2, further comprising the step of forming a passivation film covered with the insulating light-shielding layer on the active element.