JPH09153395A - Manufacture of organic thin film el element - Google Patents

Abstract

PROBLEM TO BE SOLVED: To immobilize a material constitution an organic thin film EL element, eliminate a dark spot, and prolong the life of the element by providing a hardening agent made of a compound having the epoxy group on the outside of the element to be impregnated into the element. SOLUTION: An ITO film 2 is sputtered on a glass substrate 1 to form the anode of an organic thin film EL element. Equal quantities of an epoxy resin and N,N'-diphenyl N are stirred to form an organic positive hole injection transportation layer 3. An organic light emitting layer 4 is deposited on a transportation layer 3, and a cathode 5 made of Al and Li metal films is provided on the light emitting layer 4. A hardening agent 6 is made of an amine compound, it is mixed with a sealing epoxy resin into a solution, it is dripped from the cathode 5 side, and the epoxy group in the organic positive hole injection transportation layer 3 is polymerized and cross-linked to form an immobilized organic positive hole injection transportation layer 8. A homogeneous organic thin film EL element excellent in heat resistance can be formed.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing an organic thin film electroluminescence (hereinafter referred to as EL) device, and more particularly to a method for manufacturing an organic thin film EL device utilizing the EL phenomenon.

[0002]

2. Description of the Related Art In recent years, as a color display device capable of multicolor display in response to an electric signal, an organic thin film EL element capable of obtaining high-luminance light emission has been developed, and has been attracting attention as a light emitting element in various display devices. There is. Since the organic thin film EL element is self-luminous, it has higher visibility than an LCD, and most of the fluorescent materials used for other display devices such as LEDs and fluorescent display tubes are inorganic materials. Since it is difficult to obtain multiple colors because it is used as a raw material, since the organic thin film EL element uses an organic substance as a main raw material, the molecular design is easy, and the material constituting it can be selected from various materials. In addition, in principle, a dispersion EL element that uses an inorganic material as a main material must apply a high voltage to light emission, whereas an organic thin film EL can realize light emission when a low voltage is applied.
Also, because it is a completely solid element, it has excellent properties such as excellent impact resistance and easy handling, and it has been researched and developed as a pixel of a graphic display, a pixel of a television image display device, or a surface light source. It is being actively conducted.

FIG. 4 shows a general cross-sectional structural view of a conventional organic thin film EL element. The organic thin film EL device according to this figure is composed of a glass substrate 1 / anode (hereinafter referred to as ITO) 2 /
The organic hole injecting and transporting layer 3, the organic light emitting layer 4, the cathode 5 and the sealing layer 9 are laminated in this order. First, ITO, which is a composite oxide of indium and tin, is formed on a glass substrate 1 as a transparent support substrate by a vapor deposition method or a sputtering method.
2 is deposited to form an anode. Next, as the organic hole injecting and transporting layer 3, 1,1-bis (4-di-p-tolylaminophenyl) cyclohexane or copper phthalocyanine, or N, N, N ′, N′-tetra-p-tolyl-1 is used. ，
A low molecular weight compound having a hole transporting ability such as 1'-biphenyl-4,4'-diamine is formed to a thickness of about 0.1 μm or less by a vacuum deposition method, a sputtering method, an ion plating method or the like. On top of this, a tris (8-quinolinol) aluminum complex (hereinafter referred to as Alq ₃
And the like) having a light emitting ability are vapor-deposited in a thickness of about 0.1 μm or less, and M is formed as a cathode 5 thereon.
g: Ag, Ag: Eu, Mg: Cu, Mg: In, A
l: An alloy such as Li is vapor-deposited to a thickness of about 200 nm by co-evaporation. Finally, a film forming method such as potting, spin coating, or dipping using an adhesive resin such as a silicone resin or a cross-linked ethylene-vinyl acetate copolymer sheet or an epoxy resin as the sealing layer 9 that coats the entire element. Are formed by using. In the organic thin film EL element thus manufactured, the power source 10 is connected between the ITO 2 and the cathode 5 and
When a voltage of about V is applied, fluorescence from the organic light emitting layer 4 is emitted through the glass substrate 1.

By the way, the biggest problem in the present situation in putting the organic thin film EL element into practical use is that the element is deteriorated by heat generation and the driving life of the organic thin film EL element becomes short. One of the main causes of deterioration of the organic thin film EL element is that the organic thin film structure changes due to heat generated when the element is driven, because the melting point and glass transition temperature of the organic material itself constituting the element are low. It is in. As a result, the bonding between the organic thin film layer and other organic thin film layers and between the organic thin film layer and the electrode becomes non-uniform, and the applied electric field is locally applied to cause dielectric breakdown at that portion, and the organic thin film E
A non-light emitting point (dark spot) occurs in the light emission of the L element, and the organic thin film EL element deteriorates. Therefore, in order to solve such a problem, it is necessary to fix the thin film structure of the organic thin film layer and stabilize it against heat generated when the organic thin film EL element is driven.

As a concrete measure, for example, an organic thin film E
A method in which the organic low molecular weight material itself, which is the material of the organic thin film layer constituting the L element, is molecularly designed to have a high melting point or glass transition temperature so as to have excellent heat resistance (JP-A-7-53).
953, JP-A-7-90255, etc.). This is the most effective measure to solve the above-mentioned problems, but both the melting point and the glass transition temperature are not high enough to stabilize the thin film structure against heat generated when the organic thin film EL element is driven, and are not sufficient for practical use. Is the current situation.

Further, there is a manufacturing method in which an epoxy group is introduced into an organic low molecular weight material which constitutes an organic thin film EL element, and the epoxy group is polymerized and cured in a three-dimensional network to reduce the amount (Japanese Patent Laid-Open No. 7-
85973, etc.).

FIGS. 5A to 5E are sectional views showing the steps of a conventional method for manufacturing an organic thin film EL element shown in FIG. The structure of the organic thin film EL element is a glass substrate 1
/ ITO2 / organic hole injecting / transporting layer 3 / organic light emitting layer 4 / cathode 5 / sealing layer 9, and the stabilizing organic thin film layer is the hole injecting / transporting layer. This manufacturing method is as shown in FIG.
As shown in FIG. 5, an anode of a transparent conductive film of ITO2 is formed on the glass substrate 1 by vapor deposition or sputtering method, and as shown in FIG.
As an organic light-emitting layer, an organic low-molecular material having an epoxy group and an amino group for three-dimensionally curing it is formed by vacuum deposition, sputtering, Langmuir-Blodgett method, screen printing, etc. Before performing, the epoxy group is cross-linked and polymerized by UV irradiation, heat, etc. Furthermore, as shown in FIG. 5 (c),
The organic light emitting layer 4 is laminated by the above-described film forming method, and then the organic light emitting layer 4 shown in FIG.
As shown in (d), Yb, Mg, Al, In, etc. are laminated on the cathode 5 using a material having a small work function such that electrons can be easily injected into the organic thin film layer, and then shown in FIG. Thus, the sealing layer 9 is provided. In the organic thin film EL element manufactured as described above, the stabilized organic hole injecting and transporting layer 3 has a three-dimensional network structure, so that the thin film structure does not easily change, Excellent heat resistance. However, in reality, in the process of polymerizing and cross-linking the epoxy group in the organic hole injecting and transporting layer 3, the thin film structure of the hole injecting and transporting layer 3 loses its uniformity due to the molecular motion accompanying the polymerization and crosslinking. However, since the process proceeds to the step of forming the next organic light-emitting layer in this non-uniform state, voids or insufficiently bonded portions are present at each interlayer interface, which is the same as that described above when driving the organic thin film EL element. The electric field is locally concentrated, which causes the generation of dark spots and non-uniform light emission.

[0008]

As described above, in the conventional method for manufacturing an organic thin film EL device, the heat resistance of the organic material used in the organic thin film layer including the organic hole injecting and transporting layer is insufficient before. , Easily change the thin film structure. Further, even when an organic material having an epoxy group is used, polymerization and cross-linking are performed before forming the next organic thin film layer or cathode, so that the uniformity of the thin film is deteriorated and the organic film formed next is deteriorated. There are problems that voids are formed at the joint between the thin film layer and the cathode interface, which causes the generation of dark spots, and makes it difficult to take out uniform light emission.

An object of the present invention is to provide a method for manufacturing an organic thin film EL element which can obtain uniform emission without generating dark spots.

[0010]

The manufacturing method of the present invention has been made in view of the above-mentioned problems, and comprises a step of forming an anode on a supporting substrate, and an organic light-emitting layer having a light-emitting ability on the anode. An organic thin film EL including: a step of forming at least one organic thin film layer containing: a step of forming a cathode on the organic thin film layer; and a step of forming a resin coating layer covering the anode and the cathode. In the method for manufacturing an element, the step of forming the at least one organic thin film layer includes the step of forming an organic resin-dispersed thin film layer in which a low molecular compound is dispersed in a resin containing an epoxy group, and the resin An organic thin film characterized in that the step of forming a coating layer mixes a curing agent with a coating resin agent and impregnates the organic resin-dispersed thin film layer with the curing agent to polymerize and crosslink the epoxy group-containing resin. EL element It is a method of manufacture. And a step of forming an organic light emitting layer having at least a light emitting ability and an organic hole injecting and transporting layer having a hole injecting and transporting ability on the anode, and at least one layer is a resin containing an epoxy group. A method for producing an organic thin film EL device, which comprises curing with a curing agent in an organic resin-dispersed thin film layer in which a low molecular weight compound is dispersed, or an organic light emitting layer having at least light emitting ability and an electron injecting and transporting ability on the anode. Other than the step of forming an organic electron injecting and transporting layer having the following, and forming at least two organic thin film layers including at least an organic light emitting layer having a light emitting ability and an organic electron injecting and transporting layer having an electron injecting and transporting ability. Is manufactured by the same method as described above, or a method for manufacturing an organic thin film EL device, or an organic light emitting layer having at least a light emitting function and a hole injecting and transporting function on the anode. A step of forming an organic hole injecting and transporting layer and an organic electron injecting and transporting layer having an electron injecting and transporting property, wherein at least one layer is cured by a curing agent, and The present invention relates to a method for manufacturing an organic thin film EL device by the above-mentioned method, wherein the curing agent is an amine-based material.

[0011]

Embodiments of the present invention will be described below in detail with reference to the drawings.

Example 1 FIGS. 1 (a) to 1 (f) are cross-sectional views showing step by step a method of manufacturing an organic thin film EL element according to the first embodiment of the present invention. Glass substrate 1 / ITO 2
/ Organic hole injection layer 3 / light emitting layer 4 / cathode 5 / sealing layer 9 are laminated in this order.

As Example 1 of the present invention, the anode formation is as shown in FIG.
As shown in (a), ITO 2 is formed on the glass substrate 1 by a sputtering method so as to have a film thickness of 1300 Å and a surface resistance of 10 to 30 Ω / □, and is patterned by a photoresist. Then this I
The glass substrate 1 on which TO2 is deposited is first cleaned in pure water and then ultrasonically cleaned in isopropyl alcohol, and then further cleaned in a UV ozone cleaner for 5 minutes, and the glass substrate 1 is dried in a dryer. Let To form the organic hole injecting and transporting layer 3, as shown in FIG. 1B, first, an epoxy resin (Epiclon N-695 (Dainippon Ink and Chemicals, Inc.) is used.
Manufactured) and N, N′-diphenyl-N, N′-bis- (α-
(Naphthyl)-[1,1'-biphenyl] -4,4'-
Diamine (hereinafter referred to as α-NPD) is weighed in equal weight, and the solvent dichloromethane is added so as to have a ratio of 1: 100 with respect to the total weight of both, and the mixture is stirred with a shaker until the solute is completely dissolved. Next, this solution and the above-mentioned substrate are set in a dip coater, and after the glass substrate 1 is pulled up to form a film, the solvent is completely blown out in a dryer at 80 ° C. for 1 hour to form a film thickness of 500 angstrom.

Next, as shown in FIG. 1 (c), the glass substrate 1 is fixed to a substrate holder of a commercially available vacuum vapor deposition apparatus, and Alq ₃ of 200 m is placed in a molybdenum resistance heating boat.
g and reduce the pressure in the vacuum chamber to 1 × 10 ⁻⁴ Pa. Next, the resistance heating boat containing Alq ₃
After heating to 0 ° C., the organic light emitting layer 4 is vapor-deposited to a film thickness of about 600 Å on the hole injecting and transporting layer 3 at a vapor deposition rate of 1 to 3 Å / s. The substrate temperature at this time is room temperature. Next, as shown in FIG. 1 (d), A1 grain was placed in a tungsten resistance heating boat, and a predetermined amount of Li was placed in another tungsten resistance heating boat, and the inside of the vacuum chamber was adjusted to 1 × 10 ⁻⁴ Pa. Decompress. The resistance heating boat containing Al was heated to about 1000 ° C. to deposit at a deposition rate of about 5 to 10 Å / s, and the resistance heating boat containing Li was adjusted to about 0.1 to 0.
Evaporate at a deposition rate of 5 Å / s to produce Al
A cathode 5 made of a mixed metal of Li and Li and having a film thickness of about 1600 angstrom is provided on the light emitting layer. Further, FIG.
As shown in (e), the stress absorption layer 7 is formed by a film formation method described above using a material having a relatively low hardness such as In. This is formed in order to prevent a large stress from being exerted on the organic thin film during the polymerization and crosslinking of the epoxy group described later. The organic thin film EL thus manufactured
The device is further stabilized by polymerization and crosslinking of the epoxy groups in the organic hole injecting and transporting layer 3 to form a fixed organic hole injecting and transporting layer 8, as shown in FIG. 1 (f). To do. First, HARDER 3000 manufactured by Tanaka Polymer Research Institute, which is an amine compound as a curing agent
0.3 g of epoxy resin, and then epoxy resin A- for sealing
1 g of 3001 (manufactured by Tanaka Polymer Research Institute) is measured and mixed with the above curing agent. After thoroughly degassing this mixed solution,
Cathode 5 of the organic thin film EL device described above under Ar gas atmosphere
Drop from the side and leave in a desiccator for 24 hours to dry and cure. When this organic thin film EL element was made to emit light by constant current continuous driving, uniform light emission was obtained, and this state was maintained for 2000 hours or more. In addition, no dark spots occurred during that time, and it was more stable than before.

Example 2 FIGS. 2 (a) to 2 (d) show the order of steps for explaining a method for manufacturing an organic thin film EL element according to a second embodiment of the present invention, in which a glass substrate 1 is used as an element structure. / ITO2 / organic light emitting layer 3 / cathode 5 / sealing layer 9 are laminated in this order.

As the second embodiment, first, FIG.
2, ITO 2 is formed as in the first embodiment, and then the organic light emitting layer 11 is formed as shown in FIG. 2B. This organic light emitting layer 11 was formed by the same method except that the α-NPD used when forming the organic hole injecting and transporting layer 3 in Example 1 was changed to Alq ₃ , and as shown in FIG.
As shown in (d), the subsequent steps of forming the cathode 5 and the sealing layer 9 were performed in the same manner as in Example 1. This organic thin film E
When the L element was made to emit light by constant current continuous driving, uniform light emission was obtained, and this state was maintained for 2000 hours or more. Also, no dark spots occurred during that time,
It was more stable than before.

Example 3 FIGS. 3 (a) to 3 (g) show the order of steps for explaining a method of manufacturing an organic thin film EL element according to a third embodiment of the present invention. ITO2 / organic hole injecting and transporting layer 3 / organic light emitting layer 4 / organic electron injecting and transporting layer 1
3 / cathode 5 / sealing layer 9 are laminated in this order. In Example 3, first, as shown in FIG. 3A, ITO 2 was formed on the glass substrate 1 as in Example 1, and then as shown in FIG. Pore injection transport layer 3
Α-NPD used in Example 1 as the organic material of Example 1 was deposited by a vapor deposition method to a film thickness of 500 angstroms, and FIG.
The next step of forming the organic light emitting layer 4 shown in is performed in the same manner as in Example 1. Further, as shown in FIG. 3D, the organic electron injecting and transporting layer 13 was formed by using 1,1,4,4-tetraphenyl having an organic electron injecting and transporting ability in place of the α-NPD used in Example 1. It can be formed by the same method except that -1,2-butadiene (TPB) is used, and the subsequent steps shown in FIG. 3E, the cathode 5 and the epoxy group polymerization and cross-linking steps, are the same as in Example 1. . When this organic thin film EL element was made to emit light by constant current continuous driving, uniform light emission was obtained, and this state was maintained for 2000 hours or more. Also,
No dark spots occurred during that time, and it was more stable than before.

In these Examples 1, 2 and 3, the organic thin film EL element having the hole injecting and transporting layer fixed is also sealed at the same time, and it is not necessary to provide another sealing layer. Further, in the organic thin film EL device structure of Example 1, the organic resin dispersed thin film layer for polymerizing and crosslinking the epoxy group is applied to the organic light emitting layer 4 instead of the organic hole injecting and transporting layer 3 by the method of Example 2. Alternatively, in the organic thin film EL device structure of Example 3, the organic resin dispersed thin film layer for polymerizing and cross-linking the epoxy group is formed in the same manner as in the organic resin dispersed thin film forming step of Examples 1 and 2. Instead of the organic electron injecting and transporting layer 13, the organic hole injecting and transporting layer 3 and the organic light emitting layer 4 may be applied. In addition to the anodes used in Examples 1, 2, and 3 as other examples, gold, platinum, which is opaque and has a large work function value for easily injecting holes into the organic light emitting layer 4 through the hole injecting and transporting layer 3, is used. ,palladium,
It is also possible to use a metal plate of nickel or the like, a semiconductor substrate of silicon, gallium phosphide, amorphous silicon carbide or the like having a work function of 4.6 eV or more, or an anode obtained by coating these metals or semiconductors on an insulating support substrate. Also,
If the cathode 5 is also opaque, at least the emission direction of the organic light emitting layer 4 needs to be transparent.

In the embodiment of the present invention, the organic thin film EL element is formed by impregnating the inside of the organic thin film EL element with the curing agent.
It is characterized in that the organic fixing material constituting the element is fixed. Therefore, at least one of the organic layers constituting the organic thin film EL element must be formed of a dispersed film of an organic material using an epoxy resin as a binder. In this case, the organic solid layer that can be selected may be any one of the light emitting layer and the electron injecting and transporting layer other than the examples.
In addition, several kinds may be selected from these.

As the low molecular weight compound having a hole injecting and transporting ability, in addition to α-NPD used in the examples, aromatic amine derivatives, polyphine derivatives, phthalocyanines, oxadiazole derivatives, triazoles, imidazoles, pyrazolines, oxazoles, Hydrazone, stilbene, butadiene, imidazolethione, acylhydrazone, tetrahydroimidazole, benzidine type triferamine, etc. are used. Specifically, N, which is an aromatic amine derivative,
N'-diphenyl-N, N '-(3-methylphenyl)
-1,1'-biphenyl-4,4'-diamine (TP
D) and the like are used, but not limited to this. The resin having an epoxy group is not particularly limited, but it needs to be powdery and soluble in a solvent in which the hole injecting and transporting material can be dissolved. The mixing weight ratio of the epoxy resin and the hole injecting and transporting material is preferably about 1: 1 as described in the examples, and the ratio of the total weight to the solvent mass is 1:80 to.
It is desirable to be about 100. Further, a dispersion film using a selected epoxy resin as a binder can be formed by spin coating other than the examples. However, when a plurality of organic layers are fixed, each layer is particularly preferable if they are adjacent layers. Since it is difficult to form the same using the same solvent, it is necessary to select the epoxy resins for forming the respective layers so that they cannot be dissolved in the same solvent.

As the light emitting material used for the organic light emitting layer 4, there are naphthalene acid derivative, oxadiazole derivative, phthalocyanine derivative and the like other than the examples, but the light emitting material which can be used in the production method of the present invention is not limited to this. Also regarding the film forming method, it is effective for a known film forming technique such as a spin coating method. Further, the light emitting material in the organic light emitting layer 4 is a coumarin-based, quinacridone-based, or perylene-based material described in the laser die catalog of Lambda Physic, Inc. or Eastman Kodak Co., Ltd. for conversion of emission wavelength and improvement of emission efficiency. , Two or more kinds of phosphors such as pyran series may be doped, or two or more light emitting layers of many kinds of phosphors having RGB light emitting ability may be laminated, one of which is fluorescent in the infrared region or the ultraviolet region. May be shown.

The cathode 5 is composed of Na, Li, Mg, La, Ce, Ca, Sr, A in addition to the mixed metal of Al and Li in the embodiment.
A single metal element having a small work function such as l, Ag, In, Sn, Zn, or Zr, or a binary or ternary alloy system containing them may be used to improve stability. When a low work function cathode containing Li or Ca is used as in the embodiment, a metal layer of Al, In, Ag or the like containing no Li or Ca is further stacked thereon to protect it from oxidation. May be Further, the cathode 5 may be formed not only by the vacuum vapor deposition method of the embodiment but also by electron beam vapor deposition method, ion plating method and sputtering method, not by co-evaporation but by using an alloy target. Next, regarding immobilization of the organic layer, in addition to the amine-based curing agents as shown in the examples, generally known polyaminoamide-based curing agents capable of polymerizing and crosslinking epoxy groups, acid- and anhydride-based curing agents, etc. Although applicable, in consideration of the wettability between the resin-dispersed thin film layer and the curing agent in order to impregnate the inside of the organic thin film EL element, a low viscosity for impregnation by the capillary phenomenon,
Specifically, it needs to be 10 cps to 100 cps.

Further, as in the embodiment, a solventless type resin having an epoxy group and a liquid resin are mixed and applied together with the curing agent used in the manufacturing method of the present invention, and the organic thin film E is directly applied.
It is also possible to form the sealing layer 9 of the L element. In consideration of the fact that the organic thin film EL device is weak against heat, the epoxy resin used in the method in this case is not limited to the resin used in the examples, and is mixed with a curing agent so that the temperature from room temperature to 120.
It may be one that can be cured before and after, preferably one that can be cured at room temperature or that can be cured by UV irradiation. Regarding the viscosity of the epoxy resin for sealing, the viscosity is high in order to prevent the solution from leaking out from the organic thin film EL element immediately after the curing agent is mixed until it is completely cured. Specifically, it is 100 cps to 1000 cps.
Resins other than those in the examples may be used as long as the viscosity is around s and more preferably between 300 cps and 1000 cps. When applying a mixed solution of a curing agent and an epoxy resin, a curing accelerator, a filler, a coupling agent,
You may use additives, such as an ion accelerating agent, as needed.

[0024]

As described above, according to the production method of the present invention, an organic thin film layer having excellent heat resistance can be formed by polymerizing and cross-linking an epoxy group, and at the same time, this polymerization and cross-linking is performed on the organic thin film. Since it is performed by impregnating with a curing agent after the EL element is manufactured, the thin film structure of the organic thin film layer is uniform, and the area where the contact with the organic thin film layer or cathode formed on it is insufficient, such as voids, is reduced. However, it is possible to prolong the life of the organic thin film EL element while preventing the generation and growth of dark spots. Then, the curing agent used in the production method of the present invention can simultaneously obtain the sealing effect by using together with the epoxy resin for sealing, and by appropriately changing the viscosity of this epoxy resin, various applications and uses The present invention can be applied to any form of organic thin film EL device. Therefore, according to the manufacturing method of the present invention,
The life of the organic thin film EL element can be extended practically and effectively. Further, according to the manufacturing method of the present invention, it is possible to provide a light emitting device which uses a long-life organic thin film EL element as a light source, in which dark spots are hard to occur, and which can be applied to various uses. .

[Brief description of the drawings]

FIG. 1A to FIG. 1F are cross-sectional views showing a sequence of steps for explaining a method for manufacturing an organic thin film EL element according to a first embodiment of the present invention.

FIG. 2A to FIG. 2D are cross-sectional views showing a sequence of steps for explaining a method for manufacturing an organic thin film EL element according to a second embodiment of the present invention.

3 (a) to 3 (g) are cross-sectional views showing, in the order of steps, a method of manufacturing the organic thin film EL element according to the third embodiment of the present invention.

FIG. 4 is a general cross-sectional configuration diagram of a conventional organic thin film EL element.

5A to 5E are cross-sectional views showing the order of steps for explaining the method of manufacturing the conventional organic thin film EL element of FIG.

[Explanation of symbols]

 1 Glass Substrate 2 ITO 3 Organic Hole Injecting and Transporting Layer 4 Organic Light Emitting Layer 5 Cathode 6 Curing Agent (Epoxy Resin) 7 Stress Absorbing Layer 8 Immobilized Organic Hole Injecting and Transporting Layer 9 Sealing Layer 10 Power Supply 11 Organic Light Emitting Layer ( Epoxy resin dispersion type) 12 Immobilized organic light emitting layer 13 Organic electron injecting and transporting layer (epoxy resin dispersion type) 14 Immobilizing organic electron injecting and transporting layer 15 Ultraviolet irradiation / heating, etc.

Claims (5)

[Claims] 1. A step of forming an anode on a supporting substrate, and at least 1 including an organic light emitting layer having light emitting ability on the anode.
In a method for manufacturing an organic thin film EL element, the method comprising the steps of forming a thin organic thin film layer, forming a cathode on the organic thin film layer, and forming a resin coating layer covering the anode and the cathode. The step of forming the at least one organic thin film layer includes the step of forming an organic resin-dispersed thin film layer in which a low molecular weight compound is dispersed in a resin containing an epoxy group, and the resin coating layer is formed. A method of manufacturing an organic thin film EL element, characterized in that a step of mixing a resin with a coating resin agent and impregnating the organic resin-dispersed thin film layer with the curing agent causes polymerization and crosslinking of the resin containing an epoxy group. . 2. The step of forming the organic thin film layer includes the step of forming at least an organic light emitting layer having a light emitting ability and an organic hole injecting and transporting layer having a hole injecting and transporting ability, and at least 1. 2. The organic thin film EL according to claim 1, wherein the layer is an organic resin-dispersed thin film layer in which a low molecular weight compound is dispersed in a resin containing an epoxy group and is cured by a curing agent.
Device manufacturing method. 3. The step of forming the organic thin film layer includes the step of forming at least an organic light emitting layer having a light emitting ability and an organic electron injecting and transporting layer having an electron injecting and transporting ability, and at least one layer is formed by a curing agent. The method of manufacturing an organic thin film EL element according to claim 1, wherein the method is curing. 4. The step of forming the organic thin film layer includes: an organic light emitting layer having at least a light emitting ability; an organic hole injecting and transporting layer having a hole injecting and transporting ability; and an organic electron injecting and transporting layer having an electron injecting and transporting ability. Forming at least 1
The layer is cured with a curing agent.
A method for producing the organic thin film EL element described. 5. The method of manufacturing an organic thin film EL device according to claim 1, wherein the curing agent is an amine-based material.