JPH09152620A - Liquid crystal display element - Google Patents

Liquid crystal display element

Info

Publication number
JPH09152620A
JPH09152620A JP31125195A JP31125195A JPH09152620A JP H09152620 A JPH09152620 A JP H09152620A JP 31125195 A JP31125195 A JP 31125195A JP 31125195 A JP31125195 A JP 31125195A JP H09152620 A JPH09152620 A JP H09152620A
Authority
JP
Japan
Prior art keywords
substrate
liquid crystal
sealing material
conductive spacer
tft substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP31125195A
Other languages
Japanese (ja)
Other versions
JP2776348B2 (en
Inventor
Tomohiro Kusanagi
智宏 草薙
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP31125195A priority Critical patent/JP2776348B2/en
Publication of JPH09152620A publication Critical patent/JPH09152620A/en
Application granted granted Critical
Publication of JP2776348B2 publication Critical patent/JP2776348B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Abstract

PROBLEM TO BE SOLVED: To improve the yield, and to make the screen large and to reduce the weight by preventing the electrostatic breakdown of an LCD panel and preventing wires from being short-circuited by a conductive spacer. SOLUTION: At the periphery of an LCD display part (TFT element 5), a common electrode 4 to which a shunt transistor 11 for electrostatic breakdown prevention is connected is formed on the top surface of a TFT substrate 1 where the element is formed. Then a conductive spacer containing seal material 3 is arranged between a TFT substrate 1 and a CF substrate 2 at the position corresponding to the common electrode 4 and a liquid crystal material 7 is sandwiched between those substrates.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【発明の属する技術分野】本発明は、液晶表示素子に関
し、特に、TFT基板の表示部周辺の素子側表面に静電
防止用のシャントトランジスタを接続した共通コモン電
極上に導電性スペーサ含有シール材を配置した液晶表示
素子に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a liquid crystal display device, and more particularly, to a sealing material containing a conductive spacer on a common electrode having a shunt transistor for preventing static electricity connected to an element side surface around a display portion of a TFT substrate. And a liquid crystal display device having the same.

【0002】[0002]

【従来の技術】従来のTFT(Thin film t
ransistor)−LCD(Liquid cry
stal display)は画面サイズで3型から1
3型クラスが一般的に使用されており、薄型・軽量・低
消費電力を追求しつつ、パソコンを初めとするOA(O
ffice automation)、FA(Fact
ory automation)のあらゆる分野で広範
囲に使用されている。さて、これら従来のTFT−LC
Dは通常、図2に示すような構成になっている。図2
(a)は従来の液晶表示素子を示す断面図である。対向
電極6を設けたCF(Color filter)基板
2とTFT素子5を設けたTFT基板1の間に液晶材7
を10μmの間隔を保って挟持し、この液晶材の周辺部
をシール材8により接着して、TAB(Tape au
tomated bonding)端子10に電圧を印
加する駆動装置を設ける構成をとっている。
2. Description of the Related Art A conventional TFT (Thin film t)
ransistor) -LCD (Liquid cry)
stal display) is 3 to 1 in screen size
The 3 type class is generally used. In pursuit of thinness, light weight and low power consumption, OA (O
office, FA (Fact)
Widely used in all fields of ory automation. Now, these conventional TFT-LC
D usually has a configuration as shown in FIG. FIG.
(A) is a sectional view showing a conventional liquid crystal display element. A liquid crystal material 7 is interposed between a CF (Color filter) substrate 2 provided with a counter electrode 6 and a TFT substrate 1 provided with a TFT element 5.
Are held at an interval of 10 μm, and the periphery of the liquid crystal material is adhered with a sealing material 8 to form a TAB (Tape au).
A configuration is adopted in which a driving device that applies a voltage to a tomated bonding (terminal) 10 is provided.

【0003】このとき、TFT基板1とCF基板2の間
隔を一定に保つため、プラスチックビーズやガラスファ
イバー等のスペーサ材12を画面表示部およびシール材
8内にそれぞれ均一に配置している。一般には液晶材と
シール材8に混入させるスペーサ材12は、TFT素子
5のパターン段差等を考慮し異なる径のものを用いる場
合が多い。そして、CF基板2に形成されている対向電
極6への電圧の印加はTFT基板1からトランスファー
9を通じて行っている。このため、トランスファー9の
材料としては銀ペーストがよく用いられている。また、
図2(b)は従来のTFT基板1上に素子、配線等が形
成された様子を示す上面図である。ドレイン線13とゲ
ート線14を格子状に配置し、この格子状の内部にTF
T素子5および画素が配列されている。そして、表示画
面にあずからない適当な位置にコモンパッド16を設け
て、トランスファー9を配置させた構造を有している。
At this time, in order to keep the distance between the TFT substrate 1 and the CF substrate 2 constant, spacer materials 12 such as plastic beads and glass fibers are uniformly arranged in the screen display portion and the seal material 8, respectively. Generally, the spacer material 12 to be mixed with the liquid crystal material and the sealing material 8 often has a different diameter in consideration of the pattern step of the TFT element 5 and the like. The application of a voltage to the counter electrode 6 formed on the CF substrate 2 is performed from the TFT substrate 1 through the transfer 9. For this reason, a silver paste is often used as a material of the transfer 9. Also,
FIG. 2B is a top view showing a state in which elements, wiring, and the like are formed on the conventional TFT substrate 1. The drain lines 13 and the gate lines 14 are arranged in a grid pattern, and the TF is arranged inside the grid pattern.
T elements 5 and pixels are arranged. Further, the common pad 16 is provided at an appropriate position which does not belong to the display screen, and the transfer 9 is arranged.

【0004】その他、最近のLCDでは図3(a),
(b)に示したように、トランスファー電極38(コモ
ンパッド16)をその他の電極や端子と重ならない位置
に、周辺シール材44の一部に形成し、コンパクトな構
造とする方法(特開平4−153625)や、図4
(a)〜(d)に示すように上下電極基板のシールと電
気的接合を兼用させる方法(実開昭61−89819)
や、図5(a)〜(c)に示すようにシール材7の一部
を構成する、基板間隔よりも大きい弾力性のある導電性
粒子10でもって上下電極基板間の適当な箇所の電気的
接続を得るようにした方法(特開昭62−21893
7)などがある。
[0004] In recent LCDs, FIG.
As shown in FIG. 2B, a method of forming the transfer electrode 38 (common pad 16) on a part of the peripheral sealing material 44 at a position not overlapping with other electrodes and terminals to obtain a compact structure (Japanese Patent Laid-Open No. −153625) and FIG.
(A) to (d), a method of combining the sealing and electrical bonding of the upper and lower electrode substrates (Japanese Utility Model Application Laid-Open No. 61-89819)
In addition, as shown in FIGS. 5A to 5C, the elastic conductive particles 10 constituting a part of the sealing material 7 and having a larger elasticity than the substrate interval are used to generate electricity at an appropriate position between the upper and lower electrode substrates. (Japanese Unexamined Patent Publication No. 62-21893)
7).

【0005】ここで、従来のLCDでは、CF基板2と
TFT基板1を接続するためにトランスファーとして銀
ペーストを設けているが、銀ペースト内に含まれるイオ
ン性不純物が基板表面の表示部で電気二重層等を作って
表示不良を起こす問題があった。この問題は特開平4−
153625の図3のようにトランスファー電極を周辺
シールとともに形成したり、実開昭61−89819の
図4のように導電性を有するスペーサを含んだシール材
により上下電極基板間を電気的接合をさせることで解決
を図っている。
Here, in the conventional LCD, a silver paste is provided as a transfer for connecting the CF substrate 2 and the TFT substrate 1, but ionic impurities contained in the silver paste are generated in a display portion on the surface of the substrate. There was a problem that display failure was caused by forming a double layer or the like. This problem is described in
The transfer electrode is formed together with the peripheral seal as shown in FIG. 3 of 153625, or the upper and lower electrode substrates are electrically connected by a sealing material including a conductive spacer as shown in FIG. 4 of Japanese Utility Model Application Laid-Open No. 61-89819. We are trying to solve it.

【0006】[0006]

【発明が解決しようとする課題】しかしながら、最近の
方法ではトランスファーのための電極を個別に数ヵ所形
成しなければならなかった。その上、例えばトランスフ
ァー電極の配線がシール材の内側や外側であればその分
だけ基板に占める画面サイズを小さくしてしまい大画面
化・軽量化の妨げになっていた。また、特開平4−15
3625の図3のようにシール材内の一部にトランスフ
ァー電極(コモンパッド)を形成し導電性スペーサを用
いた場合でも、トランスファー電極形成パターンがシー
ル材の一部であるとトランスファー電極に関わらないシ
ール材中の導電性スペーサが、ドレイン線またはゲート
線の配線と対向電極との間や、ドレイン線間・ゲート線
間において短絡を起こすという問題もあった。この場合
通常、配線上には200nm程度の薄いパッシベーショ
ン等の絶縁膜が形成されるが、スペーサと配線−対向電
極間の機械的圧力に対し、信頼性が確保されていない。
よって、現在のところ、層間ショートを引き起こすのを
避けられないというのが実状である。
However, in the recent method, several electrodes for transfer have to be individually formed. In addition, for example, if the wiring of the transfer electrode is inside or outside the sealing material, the screen size occupying the substrate is reduced accordingly, which hinders the increase in screen size and weight. In addition, JP-A-4-15
Even when a transfer electrode (common pad) is formed in a part of the sealing material and a conductive spacer is used as shown in FIG. 3 of 3625, if the transfer electrode forming pattern is a part of the sealing material, the transfer electrode does not relate to the transfer electrode. There is also a problem that the conductive spacer in the sealing material causes a short circuit between the wiring of the drain line or the gate line and the counter electrode, or between the drain line and the gate line. In this case, an insulating film such as a thin passivation film having a thickness of about 200 nm is usually formed on the wiring, but the reliability with respect to the mechanical pressure between the spacer and the wiring-counter electrode is not ensured.
Therefore, at present, it is inevitable to cause an interlayer short circuit.

【0007】その他、素子が形成されたTFT基板1上
にスクリーン印刷する工程や、TFT基板とCF基板を
重ね合わせる工程において、導電性スペーサを混入した
シール材は、シール材への導電スペーサ数の混入率が大
きくなればなるほど、これまでのシール材とスペーサの
場合では問題となっていなかったTFT素子5が静電破
壊を起こすという不都合が発生するようになった。実験
ではシール材への導電性スペーサ混入率を0.5wt%
にするとTFT−LCD製造後のTFT素子の静電破壊
不良が6.2%増加した。
[0007] In addition, in the step of screen printing on the TFT substrate 1 on which the elements are formed, or in the step of superposing the TFT substrate and the CF substrate, the sealing material mixed with the conductive spacer is reduced in the number of conductive spacers to the sealing material. The greater the mixing ratio, the more inconvenience that the TFT element 5, which has not been a problem with the conventional sealing material and spacer, causes electrostatic breakdown. In the experiment, the mixing ratio of the conductive spacer to the sealing material was 0.5 wt%.
As a result, the electrostatic breakdown failure of the TFT element after the manufacture of the TFT-LCD increased by 6.2%.

【0008】本発明は、共通コモン電極に接続されたシ
ャントトランジスタにより、TFT素子の静電破壊を防
ぎ、かつ、導電性スペーサと配線−対向電極間および配
線間の短絡を防ぐために、TFT基板の素子側表面に静
電防止用のシャントトランジスタを接続した共通コモン
電極を画面周辺に形成し、この形成パターンに沿って導
電性スペーサを含有したシール材を形成することによ
り、歩留まりを向上させ、かつ、基板に占める画面表示
面積の最大化および液晶表示素子の軽量化を行うことを
目的とするものである。
According to the present invention, a shunt transistor connected to a common common electrode is used to prevent a TFT element from being electrostatically damaged and to prevent a short circuit between a conductive spacer and a wiring-opposite electrode and between wirings. By forming a common common electrode connected to a shunt transistor for preventing static electricity on the element side surface around the screen and forming a sealing material containing a conductive spacer along this formation pattern, the yield is improved, and Another object of the present invention is to maximize the screen display area occupying the substrate and reduce the weight of the liquid crystal display element.

【0009】[0009]

【課題を解決するための手段】本発明の液晶表示素子
は、それぞれ電極配置されたTFT基板とCF基板間に
液晶材を具備し、スペーサ材により均一なギャップを保
ってシール材により挟持された液晶表示素子において、
前記TFT基板の表面部周辺の素子側表面に静電防止用
のシャントトランジスタが接続された共通コモン電極が
形成され、かつ、シール材がトランスファー機能を有す
る導電性スペーサを含有することを特徴とする。
The liquid crystal display device of the present invention comprises a liquid crystal material between a TFT substrate and a CF substrate on which electrodes are respectively arranged, and is sandwiched by a sealing material while maintaining a uniform gap by a spacer material. In liquid crystal display devices,
A common common electrode to which a shunt transistor for preventing static electricity is connected is formed on an element side surface around a surface portion of the TFT substrate, and a sealing material contains a conductive spacer having a transfer function. .

【0010】[0010]

【発明の実施の形態】次に図面を参照して本発明につい
て説明する。図1(a)は本発明の第1の実施の形態を
示す液晶表示素子の断面図であり、図1(b)は第1の
実施の形態の液晶表示素子のTFT基板側上面概念図で
ある。この液晶表示素子の製造にあたっては、まずTF
T基板1上にITO(Indim tin oxid
e)、Al(アルミニウム)、α−Si(アモルファス
シリコン)等によりスパッタ、露光、現像、剥離を繰り
返してTFT素子5およびシャントトランジスタ11を
形成し、AlやCr(クロム)により同様にゲート線1
4、ドレイン線13およびTAB端子10を形成する。
そしてTFT基板の最表面にAlやCrのスパッタリン
グによって、共通コモン電極4を表示部外側の表面にパ
ターニングする。また、対向電極6がベタづけされたC
F基板2上には、TFT基板1上に共通コモン電極4に
対応した位置に導電性スペーサを含有したシール材3を
スクリーン印刷により形成する。このときシール材3に
はエポキシ樹脂で出来た有機接着剤が用いられ、導電性
スペーサにはプラスチックビーズに金蒸着が施こされた
導電性粒子が用いられる。
BEST MODE FOR CARRYING OUT THE INVENTION The present invention will now be described with reference to the drawings. FIG. 1A is a cross-sectional view of a liquid crystal display device according to a first embodiment of the present invention, and FIG. 1B is a conceptual top view of the liquid crystal display device of the first embodiment on the TFT substrate side. is there. In manufacturing this liquid crystal display element, first, TF
On the T substrate 1, ITO (Intim tin oxid)
e), the TFT element 5 and the shunt transistor 11 are formed by repeating sputtering, exposure, development and peeling with Al (aluminum), α-Si (amorphous silicon) or the like, and the gate line 1 is similarly formed with Al or Cr (chromium).
4, the drain line 13 and the TAB terminal 10 are formed.
Then, the common common electrode 4 is patterned on the outer surface of the display unit by sputtering of Al or Cr on the outermost surface of the TFT substrate. In addition, C having the counter electrode 6
On the F substrate 2, a sealing material 3 containing a conductive spacer is formed on the TFT substrate 1 at a position corresponding to the common common electrode 4 by screen printing. At this time, an organic adhesive made of an epoxy resin is used for the sealing material 3, and conductive particles obtained by depositing gold on plastic beads are used for the conductive spacer.

【0011】次に、配線、素子等が形成されたTFT基
板1と導電性スペーサを含有したシール材3を印刷した
CF基板2は、位置合わせをおこなった後に150℃か
ら230℃で高温圧着をして重ね合わせる。この重ね合
わされたLCDパネルは、注入孔より液晶材7を真空注
入し、UV硬化樹脂によって封口後、周辺駆動装置をア
センブリして液晶表示素子が完成する。
Next, the TFT substrate 1 on which wirings, elements, etc. are formed, and the CF substrate 2 on which the sealing material 3 containing a conductive spacer is printed, are subjected to high-temperature press bonding at 150 to 230 ° C. after alignment. And overlap. The liquid crystal material 7 is vacuum-injected into the superposed LCD panel from the injection hole, sealed with a UV curable resin, and a peripheral driving device is assembled to complete a liquid crystal display element.

【0012】ここで、シール材3に用いられる有機接着
剤はシリコン樹脂系も用いられる。また、導電性スペー
サの粒子にはガラスファイバーを用いることも可能であ
り、この表面につけられる金属の蒸着膜は銀を用いるこ
ともある。
Here, as the organic adhesive used for the sealing material 3, a silicone resin is also used. Further, glass fibers can be used for the particles of the conductive spacer, and silver may be used for the metal deposition film attached to the surface.

【0013】このようにして製造された液晶表示素子は
従来の銀ペーストがないため高精度にギャップをコント
ロールすることが可能となり、表示面内のギャップ不良
がなくなった。そして、表示面周辺に均一に配置された
導電性スペーサによって導通に関わる接地面積が増した
ため、イオン性不純物のパネル内部への溶出もなくなっ
たため、表示シミを低減することができた。また、シャ
ントトランジスタ11を接続した表面の共通コモン電極
4上に導電性スペーサ含有シール材3を形成したことに
より、例えば、LCDパネル製造中において、基板の切
断時や基板の搬送時あるいは取り扱い時の摩擦等により
TFT基板の素子部に帯電した静電気、もしくはLCD
パネル製造後において、偏光板の張り替えリペアー作業
でTFT基板の素子部に帯電した静電気は、ゲート線1
4またはドレイン線13からシャントトランジスタ11
を通じて共通コモン電極4側へ逃げるため、TFT素子
5の破壊を防ぐことが出来るようになった。その上、従
来、導電性スペーサを用いた場合−対向電極間および配
線−配線間の短絡も、共通コモン電極4上に導電スペー
サを配置したことにより防ぐことができるようになっ
た。そして、共通コモン電極4と導電性スペーサ含有シ
ール材3がLCDパネル面内で同位置のため、面内に占
める表示面積の最大化と、これに伴う液晶表示素子の軽
量化も出来るようになった。表1は静電破壊および短絡
発生率を、表2は有効表示領域占有率の比較を示してい
る。
Since the liquid crystal display device manufactured in this manner does not have the conventional silver paste, it is possible to control the gap with high precision and eliminate the gap defect in the display surface. The conductive spacers uniformly arranged around the display surface increased the ground area related to conduction, so that ionic impurities were not eluted into the panel, thereby reducing display stains. Further, by forming the conductive spacer-containing sealing material 3 on the common common electrode 4 on the surface to which the shunt transistor 11 is connected, for example, during production of an LCD panel, when cutting a substrate, transporting a substrate, or handling the substrate. Static electricity charged to the TFT substrate element due to friction, etc., or LCD
After the panel is manufactured, the static electricity charged on the element portion of the TFT substrate in the repair work of replacing the polarizing plate is transferred to the gate line 1.
4 or drain line 13 to shunt transistor 11
As a result, the TFT element 5 can be prevented from being destroyed. In addition, when a conductive spacer is used in the related art, a short circuit between the counter electrode and between the wirings can be prevented by disposing the conductive spacer on the common common electrode 4. Since the common common electrode 4 and the conductive spacer-containing sealing material 3 are located at the same position in the LCD panel surface, the display area occupied in the surface can be maximized, and the weight of the liquid crystal display element can be reduced accordingly. Was. Table 1 shows the ratio of occurrence of electrostatic breakdown and short circuit, and Table 2 shows a comparison of the occupation ratio of the effective display area.

【0014】[0014]

【表1】 [Table 1]

【0015】[0015]

【表2】 [Table 2]

【0016】本発明の第2の実施の形態としては、TF
T基板1の表面に形成された共通コモン電極4と導電性
スペーサ含有シール材3が全領域において1:1に対応
している必要はなく、共通コモン電極4の領域(幅)の
方が大きくても良い。この場合、例えば、共通コモン電
極4の幅のみを0.2ミリ拡大させるとシール印刷時の
シールずれに対する製造マージンが第1の実施の形態よ
りも20%大きく保つことが可能となる。
As a second embodiment of the present invention, TF
It is not necessary that the common common electrode 4 formed on the surface of the T-substrate 1 and the sealing material 3 containing a conductive spacer correspond to 1: 1 in the entire area, and the area (width) of the common common electrode 4 is larger. May be. In this case, for example, if only the width of the common common electrode 4 is increased by 0.2 mm, the manufacturing margin for the seal displacement at the time of printing the seal can be maintained at 20% larger than that of the first embodiment.

【0017】[0017]

【発明の効果】以上説明したように、本発明は、シャン
トトランジスタを接続した共通コモン電極上に導電性ス
ペーサ含有シール材を配置するため、TFT素子の静電
破壊を防ぎ、かつ、導電スペーサによる配線間の短絡を
も防止することが可能となった。また、基板に占める有
効表示面積が従来品に比べ5%ほど改善した。
As described above, according to the present invention, the conductive spacer-containing sealing material is arranged on the common electrode to which the shunt transistor is connected. It has become possible to prevent a short circuit between wirings. Further, the effective display area occupying the substrate was improved by about 5% as compared with the conventional product.

【図面の簡単な説明】[Brief description of the drawings]

【図1】(a)〜(c)はそれぞれ本発明の第1の実施
の形態を示す断面図、TFT基板側の上面図、TFT基
板詳細断面図である。
FIGS. 1A to 1C are a sectional view, a top view on a TFT substrate side, and a detailed sectional view of a TFT substrate, respectively, showing a first embodiment of the present invention.

【図2】(a)〜(c)はそれぞれ従来例を示す断面
図、TFT基板側の上面図、TFT基板詳細断面図であ
る。
FIGS. 2A to 2C are a cross-sectional view showing a conventional example, a top view on the TFT substrate side, and a detailed cross-sectional view of the TFT substrate, respectively.

【図3】(a),(b)は特開平4−153625の従
来例を示す図である。
FIGS. 3A and 3B are diagrams showing a conventional example of Japanese Patent Application Laid-Open No. 4-153625.

【図4】(a)〜(d)は実開昭61−89819の従
来例を示す図である。
FIGS. 4A to 4D are views showing a conventional example of Japanese Utility Model Application Laid-Open No. 61-89819.

【図5】(a)〜(c)は特開昭62−218937の
従来例を示す図である。
FIGS. 5A to 5C are diagrams showing a conventional example of JP-A-62-218937.

【符号の説明】[Explanation of symbols]

1 TFT基板 2 CF基板 3 導電性スペーサ含有シール材 4 共通コモン電極 5 TFT素子 11 シャントトランジスタ Reference Signs List 1 TFT substrate 2 CF substrate 3 Sealing material containing conductive spacer 4 Common common electrode 5 TFT element 11 Shunt transistor

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】 TFT基板とCF基板を対向させシール
材により挟持した間隙に液晶材を充填した液晶表示素子
において、前記TFT基板の前記シール材が形成される
部位の表面に静電防止用のシャントトランジスタが接続
された共通コモン電極が形成され、かつ前記シール材が
トランスファー機能を有する導電性スペーサを有するも
のであることを特徴とする液晶表示素子。
In a liquid crystal display element in which a liquid crystal material is filled in a gap between a TFT substrate and a CF substrate which are opposed to each other and sandwiched by a sealing material, a surface of the TFT substrate on which the sealing material is formed is provided with an antistatic film. A liquid crystal display element, wherein a common common electrode to which a shunt transistor is connected is formed, and the sealing material has a conductive spacer having a transfer function.
JP31125195A 1995-11-29 1995-11-29 Liquid crystal display device Expired - Lifetime JP2776348B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP31125195A JP2776348B2 (en) 1995-11-29 1995-11-29 Liquid crystal display device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP31125195A JP2776348B2 (en) 1995-11-29 1995-11-29 Liquid crystal display device

Publications (2)

Publication Number Publication Date
JPH09152620A true JPH09152620A (en) 1997-06-10
JP2776348B2 JP2776348B2 (en) 1998-07-16

Family

ID=18014911

Family Applications (1)

Application Number Title Priority Date Filing Date
JP31125195A Expired - Lifetime JP2776348B2 (en) 1995-11-29 1995-11-29 Liquid crystal display device

Country Status (1)

Country Link
JP (1) JP2776348B2 (en)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6061105A (en) * 1998-04-16 2000-05-09 International Business Machines Corporation LCD with via connections connecting the data line to a conducting line both before and beyond the sealing material
US6392735B1 (en) 1999-09-29 2002-05-21 Nec Corporation Liquid crystal display apparatus with sealing element including conductive spacers
US6483495B2 (en) 2000-06-19 2002-11-19 Sharp Kabushiki Kaisha Liquid crystal display device
WO2008087899A1 (en) * 2007-01-15 2008-07-24 Sharp Kabushiki Kaisha Liquid crystal panel, liquid crystal display device and television image receiver
KR100852832B1 (en) * 2002-08-01 2008-08-18 비오이 하이디스 테크놀로지 주식회사 An liquid crystal display and method for fabricating it
US7483110B2 (en) 2004-03-25 2009-01-27 Sharp Kabushiki Kaisha Liquid crystal display device
CN100462790C (en) * 2004-12-23 2009-02-18 乐金显示有限公司 Liquid crystal display panel and method of fabricating the same
US7714951B2 (en) 2006-12-04 2010-05-11 Lg. Display Co., Ltd. Liquid crystal display device
US20110116019A1 (en) * 2009-11-18 2011-05-19 Samsung Electronics Co., Ltd. Liquid crystal display
CN102508372A (en) * 2011-11-10 2012-06-20 友达光电股份有限公司 Display panel
US8711310B2 (en) 2011-02-17 2014-04-29 Samsung Display Co., Ltd. Liquid crystal display

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6355524A (en) * 1986-08-26 1988-03-10 Optrex Corp Liquid crystal display element
JPH0756191A (en) * 1993-08-18 1995-03-03 Toshiba Corp Display device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6355524A (en) * 1986-08-26 1988-03-10 Optrex Corp Liquid crystal display element
JPH0756191A (en) * 1993-08-18 1995-03-03 Toshiba Corp Display device

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6061105A (en) * 1998-04-16 2000-05-09 International Business Machines Corporation LCD with via connections connecting the data line to a conducting line both before and beyond the sealing material
US6392735B1 (en) 1999-09-29 2002-05-21 Nec Corporation Liquid crystal display apparatus with sealing element including conductive spacers
US6483495B2 (en) 2000-06-19 2002-11-19 Sharp Kabushiki Kaisha Liquid crystal display device
KR100852832B1 (en) * 2002-08-01 2008-08-18 비오이 하이디스 테크놀로지 주식회사 An liquid crystal display and method for fabricating it
US7483110B2 (en) 2004-03-25 2009-01-27 Sharp Kabushiki Kaisha Liquid crystal display device
CN100462790C (en) * 2004-12-23 2009-02-18 乐金显示有限公司 Liquid crystal display panel and method of fabricating the same
US7714951B2 (en) 2006-12-04 2010-05-11 Lg. Display Co., Ltd. Liquid crystal display device
JPWO2008087899A1 (en) * 2007-01-15 2010-05-06 シャープ株式会社 Liquid crystal panel, liquid crystal display device, television receiver
WO2008087899A1 (en) * 2007-01-15 2008-07-24 Sharp Kabushiki Kaisha Liquid crystal panel, liquid crystal display device and television image receiver
US8089573B2 (en) 2007-01-15 2012-01-03 Sharp Kabushiki Kaisha Liquid crystal panel, liquid crystal display apparatus and television receiver
US20110116019A1 (en) * 2009-11-18 2011-05-19 Samsung Electronics Co., Ltd. Liquid crystal display
KR20110054855A (en) * 2009-11-18 2011-05-25 삼성전자주식회사 Liquid crystal display
US8830410B2 (en) * 2009-11-18 2014-09-09 Samsung Display Co., Ltd. Liquid crystal display with electrostatic-resistant wirings
US8711310B2 (en) 2011-02-17 2014-04-29 Samsung Display Co., Ltd. Liquid crystal display
CN102508372A (en) * 2011-11-10 2012-06-20 友达光电股份有限公司 Display panel
CN102508372B (en) * 2011-11-10 2015-01-07 友达光电股份有限公司 Display panel

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