JP2010037575A - Transparent conductive film forming substrate, display panel, and method for producing transparent conductive film forming substrate - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a conductive film forming substrate such as a liquid crystal panel for color display provided with a transparent conductive film of a structure in which occurrence of nodules is reduced, and which has good yield and satisfactory productivity in sputtering film deposition of forming a transparent conductive film. <P>SOLUTION: The transparent conductive film forming substrate for the display panel disposed with the transparent conductive film for electrodes on one surface side of a base material is provided. The transparent conductive film has a two-layered structure formed by laminating an indium zinc oxide film and an ITO film in this order from the base material side. More particularly, the transparent conductive film is disposed on a color filter composed of colored layers. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to a transparent conductive film-formed substrate for a display panel in which a transparent conductive film is disposed on one side of a substrate.

In recent years, progress toward an information society has been remarkable, and the use of display devices has been diversified, and various display devices have been developed and put into practical use.
In particular, liquid crystal display devices have been widely used in place of CRT (Cathode-Ray Tube, CRT).
A liquid crystal panel for color display for a liquid crystal display device is simply a TFT substrate (TFT; Thin Film Transistor) and a color filter forming substrate (also referred to as a counter substrate) facing each other, and a liquid crystal between the substrates. In addition, a polarizing plate is arranged on the outside of the TFT substrate and the color filter forming substrate, and a backlight portion is arranged on the outside of the TFT substrate. The light from the backlight portion is a colored layer of each color. The light passing through the color filter composed of the colored layers of each color is on-off controlled using a liquid crystal as a switching element for each pixel.
As a method of controlling the liquid crystal, a method in which the alignment direction of the liquid crystal is rotated in a plane perpendicular to the substrate by a vertical electric field perpendicular to each substrate (also referred to as a vertical electric field method), and a lateral direction parallel to the substrate are used. There is a method of rotating in a plane parallel to the substrate by an electric field (also referred to as a transverse electric field method).
A representative example of the vertical electric field method is a TN method (Twisted Nematic mode), and the horizontal electric field method is known as an IPS (In-Plane Switching) method.
Such electric field control is usually performed by the control electrodes provided on both substrates in the case of the TN method or the like, and on the TFT substrate in the case of the IPS method (lateral electric field method). The control electrode is used.
As a control electrode, a transparent conductive ITO film (indium oxide doped with tin) has been conventionally used.

As a method for forming the ITO film used, there is a method of forming an ITO film as a single layer film on a substrate by sputtering under a predetermined sputtering condition using an ITO sintered body as a target. No. 24826 (Patent Document 1), Japanese Patent Laid-Open No. 6-247765 (Patent Document 2), and the like.
Japanese Patent Laid-Open No. 6-24826 JP, 6-247765, A Sputtering for forming an ITO film for a control electrode is generally a film composition (1 × 10 −5 torr to 1 × 10 −2 torr pressure) in an Ar gas atmosphere. For example, In 2 O 3, 90 w% + SnO 2, 10 w% composition), an ITO sintered body having a thickness of 8 mm to 15 mm is used as a target material, and the direct current magnetron sputtering method is used. As the target, a target plate is usually used in which a Cu plate is used as a backing material, indium solder is used as an adhesive layer, and a large number of sintered target materials are joined together. In the production of a color filter forming substrate in which an ITO film is disposed as a control electrode, the ITO film is formed by sputtering on the colored layer forming the color filter. In view of the property and degassing from the colored layer forming the color filter, it is required to form the film at a low temperature.

When the ITO film is formed, sputtering is performed with the target plate and the processing substrate based on the glass substrate to be sputtered facing each other in a parallel or almost parallel state. (Also referred to as particles) adheres to the outer peripheral member of the target plate and the non-erosion part of the target plate, becomes thicker, and the attached material peels off, resulting in foreign matter adhering to the processing substrate. In addition, there is a problem in that scratches (also referred to as dent scratches), foreign matter defects, and defects such as PH are generated in film formation.
The part to which the material scattered from the target plate adheres generally becomes a black protrusion, and is called a nodule. This causes abnormal discharge, increases the number of particles in the sputtering apparatus, and is also called a scratch in film formation (also called a scratch) ) And increase the number of defects.
For example, when particles made of ITO adhere to the target plate, the relationship between nodule formation and discharge is as follows, and it is said that the adhesion of particles causes frequent arc discharge.
Abnormal discharge is considered to occur by repeating the following (1) to (3).
(1) A particle 17 made of ITO adheres on the target plate 10, and the temperature rises due to the plasma and is reduced to become a high-resistance particle, and the lower part of the particle is not sputtered and becomes a protrusion 10 a. (FIGS. 4A to 4B)
(2) ITO 17a adheres to the protrusion 10a and is reduced to become high resistance and nodules. Arc discharge is generated and destroyed in the nodules, and this portion becomes particles 18. (FIGS. 4C to 4D)
(3) Particles generated by destruction adhere to the target plate. (Fig. 4 (a))
As described above, when nodules are generated, film quality deteriorates due to frequent arc discharge (such as scratches), and maintenance processing is unavoidable.

As described above, in recent years, various display devices have been developed and put to practical use.In particular, while liquid crystal panels for color display for liquid crystal display devices are remarkably widespread, the liquid crystal of the liquid crystal panel is used as a switching element for each pixel, In the sputtering film formation of the ITO film that forms the control electrode for controlling on / off of the light passing through the pixel, that is, for controlling the switching function of the liquid crystal, nodules are generated, which is a poor quality. , Which caused a decline in productivity and was required to respond.
The present invention is corresponding to this, and the conductive film such as a liquid crystal panel for a color display having a transparent conductive film having a structure with low generation of nodules, good yield and good productivity in sputtering film formation. An object of the present invention is to provide a film-formed substrate.
At the same time, an object of the present invention is to provide a display panel using such a conductive film-formed substrate.
Furthermore, the present invention intends to provide a method for producing such a conductive film-formed substrate.

The transparent conductive film forming substrate of the present invention is a transparent conductive film forming substrate for a display panel in which a transparent conductive film for electrodes is arranged on one side of a base material, and the transparent conductive film is indium in order from the base material side. It has a two-layer structure in which a zinc oxide film (also called an IZO film, IZO (trade name); Indium Zinc Oxide) and an ITO film (ITO; Indium Tin Oxide) are stacked. To do.
And it is said transparent conductive film formation board | substrate, Comprising: The said transparent conductive film is arrange | positioned above the color filter which consists of a colored layer, It is characterized by the above-mentioned.
In addition, the combined thickness of the indium zinc oxide film and the ITO film is 200 nm or less.
The transparent conductive film forming substrate is characterized in that the indium zinc oxide film has a film thickness of ½ or less of the transparent conductive film.
Here, “on the upper side of the color filter composed of the colored layer” means “on the side opposite to the base material of the color filter composed of the colored layer”.

  The display panel of the present invention is characterized by using any one of the above-described transparent conductive film-formed substrates.

The method for producing a transparent conductive film-formed substrate of the present invention is a method for producing a transparent conductive film-formed substrate for a display panel in which a transparent conductive film for an electrode is disposed on one side of a base material. In order to form, sputtering is performed using a target plate made of a sintered body of indium zinc oxide having a film composition to be formed, and ITO (indium tin oxide) having a film composition to be formed is sintered. The step of carrying out sputtering film formation using a target plate made of a body is performed.
And it is a manufacturing method of said transparent conductive film formation board | substrate, Comprising: The said transparent conductive film is arrange | positioned above the color filter which consists of a colored layer, It is characterized by the above-mentioned.

(Function)
The transparent conductive film-formed substrate of the present invention is provided with a conductive film having a structure with less generation of nodules, good yield, and good productivity when forming the transparent conductive film by adopting such a configuration. It is possible to provide a conductive film forming substrate such as a liquid crystal panel for color display.
Specifically, the transparent conductive film achieves this by having a two-layer structure in which an indium zinc oxide film and an ITO film are laminated in order from the substrate side.
Specifically, when the transparent conductive film is formed by sputtering, an indium zinc oxide film is formed using indium zinc oxide (IZO), which is a target material that is less likely to generate nodules than ITO. After that, by forming the ITO film on the indium zinc oxide (IZO) film to form a two-layer structure, gas is emitted from the base at the time of film formation (also called outer gas) ) Due to nodules and poor film quality, compared to the case of an ITO single layer, and as a transparent conductive film forming substrate for a display panel, transmittance characteristics, resistance The value is assumed to be practical.
When the transparent conductive film is a single layer of indium zinc oxide (IZO) film, the transmittance and resistance value of the indium zinc oxide (IZO) film are inferior to those of a single layer of ITO film. However, it has a two-layer structure of an indium zinc oxide (IZO) film and an ITO film that can withstand transmittance characteristics and resistance values in practical use.
During film formation by sputtering, as described above with reference to FIG. 4, noble particles are generated due to adhesion of the particles to the surface of the target plate, but when used as a target, indium zinc oxide (IZO) is better. The reason why nodules are less likely to occur than ITO is that, when forming a film, ITO is easier to form an oxide on the surface than indium zinc oxide (IZO), and it is easier to form an insulator on the surface. It is considered that ITO is more likely to cause discharge (see FIGS. 4C to 4D).
When the film thickness is 8 μm or more and 20 μm or less, the gas barrier property from the base with the indium zinc oxide (IZO) film is better than that with the ITO film as the base, and indium zinc oxide (IZO). This is because the effect of suppressing gas generation (outer gas) from the base of the film can be improved compared to the case of using the ITO film as the base.
In addition, since ITO is crystalline, it cannot sufficiently cover the base at a film thickness of a predetermined thickness (20 μm or less), whereas indium zinc oxide (IZO) is amorphous. (Because it is not crystalline), even when the film thickness is 20 μm or less, the base can be covered sufficiently if the film thickness is 8 μm or more.

And the said transparent conductive film is arrange | positioned above the color filter which consists of a colored layer, By setting it as the form of invention of Claim 2, compared with the case where a transparent conductive film is made into an ITO single layer, it is a foundation | substrate. The influence of gas generation of the color filter formed of the colored layer can be effectively suppressed.
In particular, when the transparent conductive film-formed substrate of the present invention is a color filter-formed substrate for a TN type display panel in which the transparent conductive film is disposed on the upper side of the color filter made of a colored layer, Compared with the case where the transparent conductive film is made of an ITO single layer, the number of times of target maintenance due to the generation of nodules and the frequency of target replacement can be reduced and the productivity of film formation can be expected. .

In addition, the combined thickness of the indium zinc oxide film and the ITO film is 200 nm or less, so that the transparent conductive film forming substrate for a display panel can be reliably used as a transparent conductive film forming substrate. The resistance value is assumed to withstand practical use.
The thickness of the indium zinc oxide film is ½ or less of the transparent conductive film. By adopting the form according to claim 4, as a transparent conductive film forming substrate for a display panel, the transmittance characteristic is more reliably obtained. The resistance value is assumed to withstand practical use.

  The method for manufacturing a transparent conductive film-formed substrate of the present invention has such a structure, so that a color display including a conductive film having a structure with good yield with less nodules during film formation for forming a transparent conductive film. It is possible to provide a method for manufacturing a conductive film-formed substrate such as a liquid crystal panel.

As described above, the present invention provides a liquid crystal panel for color display having a transparent conductive film having a structure in which nodule generation is small, yield is high, and productivity is good in sputtering film forming a transparent conductive film. It is possible to provide a conductive film-formed substrate such as.
At the same time, a display panel using such a conductive film-formed substrate can be provided.
Furthermore, it is possible to provide a method for manufacturing such a conductive film-formed substrate.

Embodiments of the present invention will be described with reference to the drawings.
1 is a schematic cross-sectional view of an example of an embodiment of a transparent conductive film-formed substrate of the present invention, FIG. 2 is a schematic cross-sectional view of an example of a display panel of the present invention, and FIG. 3 is a transparent conductive film shown in FIG. FIG. 3 is a process flow diagram showing a schematic flow of a film forming substrate manufacturing process and a schematic flow of a display panel manufacturing process shown in FIG. 2.
In FIG. 3, S0 to S10 indicate processing steps.
1-2, 110 is a transparent conductive film formation substrate (herein also referred to as a color filter formation substrate), 111 is a transparent substrate, 112 is a black matrix, 113 is a colored layer (also referred to as a color filter), and 114 is over. Coating layer (also referred to as a protective film), 115 a common electrode (also referred to as a transparent conductive film), 116 a polarizing plate, 120 a TFT substrate, 121 a transparent substrate, 122 an insulating layer (also referred to as a gate insulating film), 123 Display electrode (also referred to as pixel electrode), 124 is a passivation film, 126 is a polarizing plate, 131 is a semiconductor layer, 132 is a source electrode, 133 is a drain electrode, 134 is a gate electrode, and 140 is a semiconductor driving element (also referred to as TFT)) , 150 is an alignment film, 160 is a liquid crystal, and 170 is a backlight.

First, one example of an embodiment of the transparent conductive film-formed substrate of the present invention will be described with reference to FIG.
The transparent conductive film forming substrate 110 of this example is a color filter forming substrate for a TN type liquid crystal display panel. As shown in FIG. 1, a black matrix 112 and a coloring are formed on one surface of the transparent substrate 111 in order from the transparent substrate 111 side. A layer (color filter) 113, an overcoat layer (protective layer, also referred to as OC) 114, and a common electrode 115 are disposed, and a polarizing plate 116 is disposed on the other surface.
In particular, in this example, the common electrode 115 is formed of a transparent conductive film having a two-layer structure in which an indium zinc oxide film (also referred to as an IZO film) and an ITO film are stacked in this order from the transparent substrate 111 side as a base material. Become.
In the conductive film forming substrate of this example, the transparent conductive film (common electrode) 115 has a two-layer structure in which an indium zinc oxide film (IZO film) and an ITO film are laminated in order from the substrate side. The generation of nodules due to the gas generated from the base (also referred to as outer gas) and the poor film formation quality during film formation can be suppressed as compared with the case of the ITO single layer.
When the transparent conductive film is formed by sputtering, the number of times of maintenance of the target due to the generation of nodules can be reduced compared to the case where the transparent conductive film is made of an ITO single layer, and improvement in film formation productivity can be expected.
That is, the conductive film-formed substrate of this example has a structure in which nodules are generated at the time of forming the conductive film, yield is high, and productivity is good.
When the combined thickness of the indium zinc oxide film and the ITO film is 200 nm or less, the transparent conductive film forming substrate for a display panel is sure to withstand transmittance characteristics and resistance in practical use. Furthermore, when the film thickness of the indium zinc oxide film is 1/2 or less than that of the transparent conductive film 115, the transparent conductive film formation substrate for the display panel can be more reliably used as a transmittance characteristic, resistance. The value can withstand practical use.

As the transparent substrate 111, a low expansion and good transparency is preferable, and a glass substrate is used here, but is not limited thereto.
A plastic substrate or the like is also used.
As the glass substrate, quartz glass, synthetic quartz glass, soda lime or the like is used.
Here, as the black matrix 112 and the coloring layer 113, pigment dispersion type coloring materials in which pigments, dyes, and the like are mixed and dispersed in an ultraviolet curable photosensitive resin are used. Not.
As the overcoat layer (protective layer) 114, a photosensitive acrylic resin, a thermosetting epoxy resin, or the like is used.

An example of a display panel using the conductive film forming substrate (color filter forming substrate) of this example will be briefly described with reference to FIG.
The display panel shown in FIG. 2 includes the conductive film forming substrate (color filter forming substrate) 110 and the TFT substrate 120 shown in FIG. 1, the colored film 113 forming side of the conductive film forming substrate 110 and the semiconductor drive of the TFT substrate 120. This is a TN type liquid crystal display panel having a structure in which the liquid crystal 160 is disposed between both substrates, facing each other with the element (TFT) 140 formation side facing each other with an interval of about 5 μm.
As described above, the conductive film forming substrate (color filter forming substrate) 110 is formed on one surface of the transparent substrate 111 in order from the transparent substrate 111 side, the black matrix 112, the colored layer (color filter) 113, and the overcoat layer. (Also referred to as a protective layer or OC) 114, a common electrode 115 is disposed, and a polarizing plate 116 is disposed on the other surface.
The TFT substrate 120 has a semiconductor driving element (TFT) 140 and a display electrode (pixel display electrode) 123 made of ITO or the like formed on one surface of the transparent substrate 121, and a passivation made of silicon nitride or the like thereon. A film 124 and an alignment film 150 made of polyimide or the like are formed.
In order to perform the display operation, the voltage applied to the gate electrode 134 is switched between high and low so that the semiconductor drive element (TFT) 140 is turned on and off, and the display data signal applied to the source electrode 132 is changed. Writing is performed on the display electrode 123.
Display is performed by changing the orientation of the liquid crystal portion according to the voltage between the writing voltage and the common electrode 115 provided on the conductive film forming substrate (color filter forming substrate) 110.
A region surrounded by vertical and horizontal wirings corresponds to one pixel, and each pixel includes a semiconductor driving element (TFT) 140 and a transparent display electrode (electrode for applying a voltage to liquid crystal) 123 connected thereto. .
The semiconductor driving element (TFT) 140 is formed of a gate electrode 134, a gate insulating film 122, a semiconductor layer (almorphous silicon film) 131, a source electrode 132, and a drain electrode 133, and is similar to a normal MOS transistor. Perform the action.

Next, a production example of the transparent conductive film formation substrate 110 of this example and a production example of a liquid crystal panel using the transparent conductive film formation substrate will be briefly described with reference to FIGS.
First, a transparent substrate (herein also referred to as a glass substrate) 111 serving as a base of the transparent conductive film-formed substrate of the present invention is prepared in advance (S0), and on the side of the transparent substrate on which a colored layer to be a color filter is formed. Then, BM formation processing formed by the black matrix 112 is performed. (S1)
Here, a black colored layer in which a pigment, dye or the like is mixed and dispersed in an ultraviolet curable photosensitive resin is applied to one surface of a glass substrate, and the black matrix 112 is formed into a predetermined shape by a photolithography method.
The black matrix (BM) 112 includes a vertical BM in the vertical direction and a horizontal BM in the horizontal direction, and a portion surrounded by these is a portion that becomes a colored pixel.
Next, an R layer forming process (S2) for forming a first colored layer (also referred to as a red colored layer or an R layer), and a G layer for forming a second colored layer (also referred to as a green colored layer or a G layer). A formation process (S3) and a B layer formation process (S4) for forming a third colored layer (also referred to as a blue colored layer or a B layer) are performed in this order.
In the R layer forming process (S2), a red colored layer obtained by mixing and dispersing a pigment, dye or the like in an ultraviolet curable photosensitive resin is dispersed on the surface of the transparent substrate 111 on which the black matrix (BM) is formed. A first colored layer (also referred to as a red colored layer or R layer) is formed in a predetermined region by applying and applying a predetermined shape by a photolithography method.
Similarly, in the G layer forming process (S3), a green colored layer in which a pigment, a dye or the like is mixed and dispersed in an ultraviolet curable photosensitive resin, the black matrix (BM) of the transparent substrate 111, and the first colored A second colored layer (also referred to as a green colored layer or G layer) is formed in a predetermined region by applying to the surface on which the layer is formed and forming a predetermined shape by photolithography.
Similarly, in the B layer forming process (S4), a blue colored layer in which a pigment, a dye, or the like is mixed and dispersed in an ultraviolet curable photosensitive resin, the black matrix (BM) of the transparent substrate 111, the first A third colored layer (also referred to as a blue colored layer or a B layer) is formed by applying to a surface on which the colored layer and the second colored layer are formed and applying a predetermined shape by a photolithography method.

Next, an overcoat layer (protective layer) 114 was applied on the front surface on the side where the colored layer 113 (corresponding to the first colored layer to the third colored layer) was formed, and dried and cured as necessary (S5). After that, on the overcoat layer (protective layer) 114, a target plate made of a sintered body of indium zinc oxide having a film composition to be formed is used to form an indium zinc oxide film by a direct current magnetron sputtering method. Subsequently, an ITO film is formed by DC magnetron sputtering using a target plate made of a sintered body of ITO (indium tin oxide) having a film composition to be formed. (S6)
The indium zinc oxide film is formed by using, for example, a sintered target of ZnO, 10.7 wt% + In ₂ O ₃ (including some impurities in the remaining amount) in an Ar gas atmosphere at a pressure of 1 × In the range of 10 ⁻⁵ torr to 1 × 10 ⁻² torr, considering the heat resistance of the colored layer, the film is formed at a low temperature (about 130 ° C.), and the ITO film is formed by, for example, In ₂ O _{3 Using} a sintered target having a composition of 90 wt% + SnO ₂ and 10 wt%, in a DC magnetron sputtering method, in an Ar gas atmosphere, at a pressure of 1 × 10 ⁻⁵ torr to 1 × 10 ⁻² torr In consideration of the heat resistance of the colored layer, the film is formed at a low temperature (about 130 ° C.).
Note that the transparent conductive film is formed on the transparent conductive film forming substrate (color filter forming substrate) for the liquid crystal display panel, for example, in the sputtering chamber, the processing substrate is a substrate holding portion of a predetermined transfer unit (also referred to as a carrier). The indium zinc oxide film is first formed in a predetermined sputtering processing unit while being transported and held in a standing state, and then the ITO film is formed in a predetermined sputtering processing unit. The film is formed.
Here, a plurality of sputtering processing units are provided, and a target material of the sputtering processing unit to be formed is appropriately disposed in each sputtering processing unit in accordance with each film thickness to be formed.
However, the indium zinc oxide film and the ITO film are formed, for example, in each adjacent sputtering processing unit.
Thus, the transparent conductive film formation substrate 110 of this example is produced. (S7)

The transparent conductive film forming substrate 110 (S7) of this example manufactured in this way and the TFT substrate (S8) to be bonded to this for forming a liquid crystal panel are prepared in advance.
Then, an ultraviolet curable sealant is applied to the seal region on the outer periphery of the transparent conductive film forming substrate 110 of this example by a dispenser or printing, for example, to form a frame-like spacer with a predetermined height. Further, after the liquid crystal is arranged in the frame-like spacer by the dropping method, it is bonded to the TFT substrate. (S9)
At the time of bonding, the sealing material is cured by irradiating the sealing material in the sealing region with ultraviolet rays from the transparent substrate 111 side.
In this way, a liquid crystal display panel using the transparent conductive film-formed substrate of this example is produced. (S10)

The above is an example, and the present invention is not limited to this.
The use of the transparent conductive film-formed substrate of the present invention is not limited to the liquid crystal display panel.
The present invention can also be applied to an organic EL display panel.
Here, the black matrix and the colored layer (color filter) of the transparent conductive film forming substrate are formed by the pigment dispersion method as described above, but they are formed by a dyeing method, an electrodeposition method, a printing method, or the like. May be.

It is a schematic sectional drawing of one example of embodiment of the transparent conductive film formation board | substrate of this invention. It is a schematic sectional drawing of an example of the display panel of this invention. FIG. 3 is a process flow diagram showing a schematic flow of a process for manufacturing the transparent conductive film-formed substrate shown in FIG. 1 and a schematic flow of a process for manufacturing the display panel shown in FIG. 2. 4 (a) to 4 (d) are diagrams illustrating a nodule generation mechanism.

Explanation of symbols

10 Target plate 10a Protrusion 17 Particle 17a ITO
18 Particle 110 Transparent conductive film forming substrate (also referred to herein as a color filter forming substrate)
111 Transparent substrate 112 Black matrix 113 Colored layer (also called color filter)
114 Overcoat layer (also called protective film)
115 Common electrode (also called transparent conductive film)
116 Polarizing plate 120 TFT substrate 121 Transparent substrate 122 Insulating layer (also called gate insulating film)
123 Display electrode (also referred to as pixel electrode)
124 Passivation film 126 Polarizing plate 131 Semiconductor layer 132 Source electrode 133 Drain electrode 134 Gate electrode 140 Semiconductor driving element (also referred to as TFT)
150 Alignment film 160 Liquid crystal 170 Backlight

Claims (7)

  A transparent conductive film forming substrate for a display panel in which a transparent conductive film for an electrode is arranged on one surface side of a base material, wherein the transparent conductive film is a laminate of an indium zinc oxide film and an ITO film in order from the base material side A transparent conductive film-formed substrate having a two-layer structure.   2. The transparent conductive film forming substrate according to claim 1, wherein the transparent conductive film is disposed on an upper side of a color filter made of a colored layer.   3. The transparent conductive film-formed substrate according to claim 2, wherein the combined thickness of the indium zinc oxide film and the ITO film is 200 nm or less. 4. The transparent conductive film forming substrate according to claim 1, wherein a film thickness of the indium zinc oxide film is ½ or less of the transparent conductive film. 5. Forming substrate.   A display panel using the transparent conductive film-formed substrate according to any one of claims 1 to 4.   A method for producing a transparent conductive film-formed substrate for a display panel, in which a transparent conductive film for an electrode is disposed on one side of a substrate, wherein the formation of the transparent conductive film is indium zinc having a film composition to be sequentially formed Sputtering film formation using a target plate made of an oxide sintered body and sputtering target film formation using a target plate made of an ITO (indium tin oxide) sintered body having a film composition to be formed A process for producing a transparent conductive film-formed substrate.   The method for producing a transparent conductive film forming substrate according to claim 6, wherein the transparent conductive film is disposed on an upper side of a color filter formed of a colored layer. Method.

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