JPH09148347A - Mounter - Google Patents
MounterInfo
- Publication number
- JPH09148347A JPH09148347A JP7310575A JP31057595A JPH09148347A JP H09148347 A JPH09148347 A JP H09148347A JP 7310575 A JP7310575 A JP 7310575A JP 31057595 A JP31057595 A JP 31057595A JP H09148347 A JPH09148347 A JP H09148347A
- Authority
- JP
- Japan
- Prior art keywords
- cover
- solder
- substrate
- semiconductor pellet
- molten solder
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/75—Apparatus for connecting with bump connectors or layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49171—Fan-out arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
- H01L2224/83192—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
- H01L2224/92—Specific sequence of method steps
- H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
- H01L2224/9222—Sequential connecting processes
- H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
- H01L2224/92247—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Die Bonding (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は基板上に半田を介し
て電子部品本体をマウントするマウンタに関する技術分
野に属する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention belongs to a technical field relating to a mounter for mounting an electronic component body on a substrate via solder.
【０００２】[0002]
【従来の技術】電子部品は、電子部品本体を基板にマウ
ントして、電子部品本体上の電極と外部電極とを電気的
に接続して、電子部品本体を含む主要部分を外装し製造
される。 電子部品として半導体装置の一例を図４から説明する。 図において、１は放熱板（基板）、２は３本一組のリー
ドで、中央のリード２ａは放熱板１の一端に固定され、
他のリード２ｂ、２ｃはリード２ａの両側に平行配置さ
れている。３は放熱板１に接着材４を介してマウントさ
れた半導体ペレット、５は半導体ペレット３上の電極
（図示せず）とリード２ｂ、２ｃとをそれぞの電気的に
接続したワイヤ、６は半導体ペレット３を含む主要部分
を被覆し保護する外装部を示す。 この種半導体装置は、半導体ペレット３で発生した熱を
効率よく放熱板１に伝達する必要があるため、接着材４
として半田が一般的に用いられている。 この半田４は、テープ状あるいはワイヤ状、タブレット
状の半田が用いられ、加熱された放熱板１上に、定寸繰
り出したり、予め定寸に切断したものを供給することに
より溶融量が制御される。 発熱量の大きな電力用半導体装置を繰り返しオンオフ動
作させると発熱源である半導体ペレット３と半田４、放
熱板１のそれぞれの熱膨張の差により半田４はストレス
を受け接着界面に亀裂を生じ熱伝導性を低下させるが、
半田４に亀裂を生じるとその半導体装置は内部の熱を外
部に放出できず短時間で不良となる。 ここで半田４が薄いと、熱伝導性は良好にできるが半田
４は半導体ペレット３、放熱板１の熱膨張の差を吸収で
きず亀裂を生じやすい。また、半田４が厚いと熱伝導性
が低下し半導体ペレット３にて発生した熱を十分放熱板
１に伝達できないため、発熱温度が上昇し熱膨張量も大
きくなるため半田４に亀裂を生じやすくなる。そのた
め、半田４の組成にもよるが繰り返しオンオフ動作を考
慮した半田の厚みは通常５０μｍ乃至２００μｍが最適
とされている。このようにして、放熱板１上に半田４を
供給した後、溶融半田４上に吸着コレット（図示せず）
によって保持された半導体ペレット３を供給し半導体ペ
レット３をマウントしている。 ここで、半導体ペレット３の熱を効率よく放熱板１に伝
達するため、放熱板１上で溶融した半田４を耐熱性を有
する撹拌棒を用いて撹拌し、放熱板１表面に形成された
酸化膜（図示せず）を破砕し放熱板１素地と半田４とを
馴染ませ、半導体ペレット３を溶融半田４上でスクラブ
して溶融半田４と半導体ペレット３の下面とを馴染ま
せ、各界面間に熱伝導性の劣る空気を巻き込まないよう
に配慮している。 しかしながら、半田４を撹拌すると、放熱板１と半田４
の馴染みはよくなるものの、溶融半田４の表面には撹拌
棒が半田４を押し分けることにより形成された凹凸が残
留し、半導体ペレット３が凹部を覆って空気を閉じこめ
ると、スクラブしても閉じこめられた空気（ボイド）を
追い出すことが出来ず、熱伝導性が低下し、高出力動作
出来ず、寿命も短縮するという問題があった。2. Description of the Related Art Electronic components are manufactured by mounting an electronic component body on a substrate, electrically connecting electrodes on the electronic component body to external electrodes, and packaging a main portion including the electronic component body. . An example of a semiconductor device as an electronic component will be described with reference to FIG. In the figure, 1 is a heat sink (substrate), 2 is a set of three leads, and the center lead 2a is fixed to one end of the heat sink 1,
The other leads 2b and 2c are arranged in parallel on both sides of the lead 2a. 3 is a semiconductor pellet mounted on the heat dissipation plate 1 with an adhesive 4; 5 is a wire that electrically connects an electrode (not shown) on the semiconductor pellet 3 to the leads 2b and 2c; The exterior part which covers and protects the main part including the semiconductor pellet 3 is shown. In this type of semiconductor device, it is necessary to efficiently transfer the heat generated in the semiconductor pellet 3 to the heat dissipation plate 1, so that the adhesive 4
Solder is generally used as. As the solder 4, tape-shaped, wire-shaped, or tablet-shaped solder is used, and the amount of melting is controlled by feeding the heated radiating plate 1 to a fixed size or cutting it into a predetermined size. It When the power semiconductor device having a large amount of heat generation is repeatedly turned on and off, the solder 4 is stressed due to the difference in thermal expansion between the semiconductor pellet 3 and the solder 4, which are heat sources, and the heat radiating plate 1, and cracks occur at the bonding interface, resulting in heat conduction. Sex, but
When a crack is generated in the solder 4, the semiconductor device cannot release the internal heat to the outside and becomes defective in a short time. Here, if the solder 4 is thin, the thermal conductivity can be improved, but the solder 4 cannot absorb the difference in thermal expansion between the semiconductor pellet 3 and the heat dissipation plate 1 and is likely to crack. Further, if the solder 4 is thick, the thermal conductivity is lowered, and the heat generated in the semiconductor pellet 3 cannot be sufficiently transmitted to the heat dissipation plate 1, so that the heat generation temperature is increased and the thermal expansion amount is increased, so that the solder 4 is easily cracked. Become. Therefore, it is generally considered that the optimum thickness of the solder in consideration of the repeated on / off operation is 50 μm to 200 μm depending on the composition of the solder 4. In this way, after the solder 4 is supplied onto the heat dissipation plate 1, a suction collet (not shown) is formed on the molten solder 4.
The semiconductor pellet 3 held by is supplied and the semiconductor pellet 3 is mounted. Here, in order to efficiently transfer the heat of the semiconductor pellets 3 to the heat dissipation plate 1, the solder 4 melted on the heat dissipation plate 1 is agitated by using a heat-resistant agitation rod to oxidize the surface of the heat dissipation plate 1. A film (not shown) is crushed to make the heat sink 1 base and the solder 4 conform to each other, and the semiconductor pellet 3 is scrubbed on the molten solder 4 to make the molten solder 4 and the lower surface of the semiconductor pellet 3 conform to each other, and between the interfaces. Care is taken not to entrain air with poor thermal conductivity. However, when the solder 4 is agitated, the heat sink 1 and the solder 4
However, if the semiconductor pellets 3 cover the recesses and enclose the air, they will be trapped even if they are scrubbed. However, there was a problem that air (voids) could not be expelled, the thermal conductivity decreased, high output operation was not possible, and the life was shortened.
【０００３】[0003]
【発明が解決しようとする課題】そのため、放熱板上に
供給した半田片上に半導体ペレットの周縁部を配置して
傾斜した状態で載置し、溶融した半田を半導体ペレット
と放熱板の間の空間に吸い込ませて空気を追い出しつつ
固定することが、例えば特開昭５１−８１４９号公報、
特開昭４９−４９５７７号公報に開示されているが、半
導体ペレットの裏面全面を放熱板に半田を介して接続で
きるとは限らない上、傾斜した半導体ペレットが放熱板
と平行になるとは限らず、空気が残留しボイドが形成さ
れると、熱伝導性を改善するという問題を解決できない
し、半田付け後、半導体ペレットが傾斜していると、熱
伝導性の問題は解決し得たとしても電極とリードの接続
がうまくいかないという新たな問題を生じる虞があっ
た。Therefore, the peripheral edge of the semiconductor pellet is placed on the solder piece supplied on the heat sink and placed in an inclined state, and the molten solder is sucked into the space between the semiconductor pellet and the heat sink. Fixing while expelling air is disclosed in, for example, JP-A-51-8149,
As disclosed in Japanese Patent Laid-Open No. 49-49577, it is not always possible to connect the entire back surface of the semiconductor pellet to the heat sink through solder, and the inclined semiconductor pellet is not always parallel to the heat sink. , When air remains and voids are formed, the problem of improving thermal conductivity cannot be solved, and if the semiconductor pellets are tilted after soldering, even if the problem of thermal conductivity can be solved. There is a possibility that a new problem may occur that the connection between the electrode and the lead is not successful.
【０００４】[0004]
【課題を解決するための手段】本発明は上記課題の解決
を目的として提案されたもので、下端に電子部品本体を
吸着する吸着口を開口し基板上で溶融した半田上に電子
部品本体を供給する吸着コレットと、下端が基板上の溶
融半田を含む領域に当接して囲繞する筒部を有するカバ
ーと、カバー内に連通しカバー及び基板で囲まれた空間
内を減圧状態とする減圧手段とを備えたことを特徴とす
るマウンタを提供する。SUMMARY OF THE INVENTION The present invention has been proposed for the purpose of solving the above-mentioned problems, and an adsorption port for adsorbing the electronic component body is opened at the lower end, and the electronic component body is mounted on the solder melted on the substrate. A suction collet to be supplied, a cover having a cylindrical portion whose lower end is in contact with and surrounds a region containing molten solder on the substrate, and a decompressing unit that communicates with the cover and decompresses the space surrounded by the cover and the substrate. Provided is a mounter characterized by having and.
【０００５】[0005]
【発明の実施の形態】以下に本発明の実施の形態を図１
及び図２から説明する。図において、７は、放熱板（基
板）１とリード２とを多数組連結片（図示せず）により
連結一体化したリードフレーム８をガイドするガイドレ
ールで、図示省略するが、リードフレーム８を所定のピ
ッチで間歇送りする送り機構と、リードフレーム８を加
熱する加熱手段とが備えられている。 リードフレーム８には例えばイミダゾール系化合物など
の酸化防止膜が形成され、ガイドレール７に供給される
までの雰囲気中での酸化が防止され、加熱により酸化防
止膜を分解気化させることによりリードフレーム素地を
露呈させるようにしている。 ９はガイドレール７を覆うレールカバーで、上面の所定
位置には、透孔９ａ、９ｂ、９ｃが開口し、レールカバ
ー９内には、加熱されたリードフレーム８の酸化防止を
目的として不活性あるいは還元性の非酸化性雰囲気に設
定されている。 １０は透孔９ａよりレールカバー９内に挿入され、加熱
されたリードフレーム８の放熱板１上に半田１１を供給
する半田供給手段、１２は下端に真空吸着口を開口した
吸着コレットで、半導体ペレット（電子部品本体）３を
吸着保持して下端部が透孔９ｂよりレールカバー９内に
挿入され、半導体ペレット３の下面を放熱板１とほぼ平
行に保ち、その下面を溶融半田１１に接触させて放熱板
１に接着する。１３は本発明の特徴部分をなすカバー
で、有底筒体の筒部１３ａの開口部を下方に向け、ガイ
ドレール９の透孔９ｃより挿入されて、下端が放熱板１
上の溶融半田１１を含む領域に当接して囲繞する。底部
１３ｂはガイドレール７の側方からガイドレール７上に
延び上下動するアーム（図示せず）に接続されている。
１４は一端がカバー１３内に連通し、他端が負圧源（図
示せず）に接続され、カバー１３内を減圧状態にする減
圧手段（吸引パイプ）を示す。以下にこの装置の動作を
説明する。 先ず、ガイドレール７上にリードフレーム８を供給し所
定のピッチで間歇送りすると、リードフレーム８は進行
とともに図示しない加熱手段により加熱され昇温する。
この加熱されたリードフレーム８の所定部分がレールカ
バー９の透孔９ａ位置に来ると、半田供給手段１０を作
動させて、定量の半田１１を放熱板１上に供給する。 次に、供給された半田１１が溶融した状態で放熱板１が
透孔９ｂ位置に達すると、半導体ペレット３を保持した
吸着コレット１２がレールカバー９内に挿入され、溶融
半田１１上に半導体ペレット３が供給される。 このとき、溶融半田１１は表面張力により表面が湾曲し
ているが、半田１１の供給位置、溶融開始位置などのば
らつきにより、半田１１の表面は一様ではなく、凹凸が
形成される。この状態は、溶融半田１１を耐熱性を有す
る撹拌棒（図示せず）により撹拌すれば若干は緩和され
るが、図１装置のように撹拌なしの場合には凹凸は顕著
であり、大きな気泡（ボイド）を巻き込む可能性があ
る。 半導体ペレット３の供給が完了したリードフレーム８は
さらに前進して、透孔９ｃ位置に達すると、この部分で
カバー１３がレールカバー９内に挿入され、その筒部１
３ａの下端が放熱板１に当接し溶融半田１１を含む領域
を囲繞する。そしてカバー１３と放熱板１によって半導
体ペレット３周縁を閉塞した状態で減圧手段１４を作動
させると、溶融半田１１の凹凸を半導体ペレット３が塞
ぐことにより閉じこめられた空気が膨張し半導体ペレッ
ト３の裏面から放出されボイドが解消する。 また、このようにしてボイドを解消した後に半導体ペレ
ット３下の半田１１内に空気が残留しても、溶融半田１
１を取り巻く雰囲気が減圧された状態であるため、残留
ボイドは低圧となっており、減圧手段１４の動作を停止
させ、カバー１３内の雰囲気を常圧に戻すと、残留ボイ
ドは外圧により圧縮され、ボイド径は縮小する。 このようにして減圧処理が完了したリードフレーム８か
らカバー１３が除かれ、リードフレーム８はガイドレー
ル７上を進行して温度が低下する。 この温度低下により残留ボイドはさらに体積収縮し半田
１１が凝固する段階では残留ボイドは最小となり、半導
体ペレット３と半田１１の接着面積が拡大する。このよ
うに、溶融半田１１上に半導体ペレット３を供給した直
後に、溶融半田１１と半導体ペレット３との間に残留ボ
イドが存在したとしても、カバー１３と減圧手段１４に
より残留ボイドを解消ないし減少でき半導体ペレット３
で発生した熱の伝達を阻害するボイドを最小に出来る。 尚、カバー１３の筒部１３ａ下端を鋭角に形成し、この
下端を放熱板１に食い込ませて密接させることにより漏
洩を完全に防止でき一層顕著な効果を得ることが出来
る。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to FIG.
And it demonstrates from FIG. In the figure, 7 is a guide rail for guiding a lead frame 8 in which a large number of sets of heat dissipation plates (substrates) 1 and leads 2 are connected and integrated by connecting pieces (not shown). A feeding mechanism that intermittently feeds at a predetermined pitch and a heating unit that heats the lead frame 8 are provided. An anti-oxidation film such as an imidazole compound is formed on the lead frame 8 to prevent oxidation in the atmosphere until it is supplied to the guide rail 7, and the anti-oxidation film is decomposed and vaporized by heating to form a lead frame base material. Is exposed. A rail cover 9 covers the guide rail 7. Through holes 9a, 9b, 9c are opened at predetermined positions on the upper surface, and the rail cover 9 is inactive for the purpose of preventing oxidation of the heated lead frame 8. Alternatively, the atmosphere is set to a reducing non-oxidizing atmosphere. Reference numeral 10 is a solder supply means which is inserted into the rail cover 9 through the through hole 9a and supplies the solder 11 onto the heat dissipation plate 1 of the heated lead frame 8, and 12 is a suction collet having a vacuum suction opening at the lower end, which is a semiconductor. The pellet (electronic component body) 3 is adsorbed and held, and the lower end is inserted into the rail cover 9 through the through hole 9b, the lower surface of the semiconductor pellet 3 is kept substantially parallel to the heat dissipation plate 1, and the lower surface is in contact with the molten solder 11. Then, it is adhered to the heat sink 1. Reference numeral 13 denotes a cover which is a characteristic part of the present invention. The cover 13 is inserted through the through hole 9c of the guide rail 9 with the opening of the tubular portion 13a of the bottomed tubular body facing downward, and the lower end thereof is the heat dissipation plate 1.
The upper region including the molten solder 11 is abutted and surrounded. The bottom portion 13b extends from the side of the guide rail 7 onto the guide rail 7 and is connected to an arm (not shown) that moves up and down.
Reference numeral 14 denotes a decompression means (suction pipe) having one end communicating with the inside of the cover 13 and the other end connected to a negative pressure source (not shown) so as to decompress the inside of the cover 13. The operation of this device will be described below. First, when the lead frame 8 is supplied onto the guide rail 7 and is intermittently fed at a predetermined pitch, the lead frame 8 is heated by a heating means (not shown) and its temperature rises as the lead frame 8 advances.
When a predetermined portion of the heated lead frame 8 reaches the position of the through hole 9a of the rail cover 9, the solder supply means 10 is operated to supply a fixed amount of solder 11 onto the heat sink 1. Next, when the radiating plate 1 reaches the position of the through hole 9b in a state where the supplied solder 11 is melted, the suction collet 12 holding the semiconductor pellet 3 is inserted into the rail cover 9, and the semiconductor pellet is placed on the molten solder 11. 3 is supplied. At this time, the surface of the molten solder 11 is curved due to the surface tension, but due to variations in the supply position of the solder 11, the melting start position, etc., the surface of the solder 11 is not uniform and irregularities are formed. This state is slightly alleviated if the molten solder 11 is agitated by a heat-resistant agitation rod (not shown), but if there is no agitation as in the apparatus of FIG. (Void) may be involved. When the lead frame 8 after the supply of the semiconductor pellets 3 is further advanced to reach the position of the through hole 9c, the cover 13 is inserted into the rail cover 9 at this portion, and the cylindrical portion 1
The lower end of 3a contacts the heat sink 1 and surrounds a region containing the molten solder 11. When the pressure reducing means 14 is operated in a state where the periphery of the semiconductor pellet 3 is closed by the cover 13 and the heat radiating plate 1, the unevenness of the molten solder 11 is closed by the semiconductor pellet 3 and the air trapped therein is expanded, and the back surface of the semiconductor pellet 3 is expanded. It is released from and the void disappears. Further, even if air remains in the solder 11 under the semiconductor pellet 3 after the voids are eliminated in this way, the molten solder 1
Since the atmosphere surrounding 1 is in a reduced pressure state, the residual void is at a low pressure, and when the operation of the pressure reducing means 14 is stopped and the atmosphere in the cover 13 is returned to normal pressure, the residual void is compressed by the external pressure. , The void diameter is reduced. In this way, the cover 13 is removed from the lead frame 8 that has completed the depressurization process, and the lead frame 8 advances on the guide rail 7 and the temperature drops. Due to this temperature decrease, the residual voids further contract in volume and the residual voids are minimized at the stage where the solder 11 solidifies, and the bonding area between the semiconductor pellet 3 and the solder 11 increases. As described above, even if there is a residual void between the molten solder 11 and the semiconductor pellet 3 immediately after the semiconductor pellet 3 is supplied onto the molten solder 11, the cover 13 and the pressure reducing means 14 eliminate or reduce the residual void. Delivers semiconductor pellets 3
The voids that hinder the transfer of heat generated at can be minimized. By forming the lower end of the cylindrical portion 13a of the cover 13 at an acute angle and biting the lower end into the heat dissipation plate 1 and bringing them into close contact with each other, leakage can be completely prevented and a more remarkable effect can be obtained.
【０００６】[0006]
【実施例】以下に本発明の実施例を図３から説明する。
図において、図１及び図２と同一物には同一符号を付し
重複する説明を省略する。 この実施例が図１装置と相違するのは、図示しないがレ
ールカバー９の透孔９ｃを廃止し、吸着コレット１２と
カバー１３とを一体化したことのみである。即ち、カバ
ー１３の底部（閉塞部材）１３ｂに吸着コレット１２を
挿入しガイドするガイド部材１５を筒部１３ａの軸と同
軸に設け、カバー１３内で吸着コレット１２が上下動自
在としている。カバー１３はアーム（図示せず）に固定
されて水平動並びに上下動し、吸着コレット１２は図示
しない上下駆動機構に接続されている。 この装置は、半導体ペレット３の供給と溶融半田１１部
分での減圧とが同一ポジションででき、設備が小型化す
る。また、減圧時に、吸着コレット１２によって半導体
ペレット３を保持しておくことが出来るため、膨張した
ボイドを解消する際に、半導体ペレット３が位置ずれす
るのを防止できる。 尚、カバー１３の筒部１３ａの軸方向中間乃至下端を縮
径させることにより、カバー１３の容量を小さくでき、
減圧効果を高めることが出来る。 また本発明は半導体装置について説明したが、放熱板と
リードとを一体化したリードフレームを用いた電子部品
だけでなく、絶縁基板に導電パターンを形成し、この導
電パターン上に半田を介して電子部品本体をマウントし
た構造の電子部品にも適用でき、電子部品本体も、半導
体ペレットだけでなく、コンデンサ素子、抵抗素子、イ
ンダクタンス素子など電子部品一般に適用できる。EXAMPLE An example of the present invention will be described below with reference to FIG.
In the figure, the same parts as those in FIG. 1 and FIG. Although this embodiment differs from the apparatus shown in FIG. 1, only the through hole 9c of the rail cover 9 is eliminated and the suction collet 12 and the cover 13 are integrated, although not shown. That is, a guide member 15 that inserts and guides the suction collet 12 into the bottom portion (closing member) 13b of the cover 13 is provided coaxially with the axis of the tubular portion 13a, and the suction collet 12 is vertically movable within the cover 13. The cover 13 is fixed to an arm (not shown) to move horizontally and vertically, and the suction collet 12 is connected to a vertical drive mechanism (not shown). In this device, the supply of the semiconductor pellet 3 and the pressure reduction in the molten solder 11 portion can be performed at the same position, and the equipment can be downsized. In addition, since the semiconductor pellet 3 can be held by the suction collet 12 when the pressure is reduced, it is possible to prevent the semiconductor pellet 3 from being displaced when the expanded void is eliminated. The capacity of the cover 13 can be reduced by reducing the diameter of the middle or lower end of the cylindrical portion 13a of the cover 13 in the axial direction.
The decompression effect can be enhanced. Further, although the present invention has been described with respect to the semiconductor device, not only the electronic component using the lead frame in which the heat sink and the lead are integrated, but also the conductive pattern is formed on the insulating substrate, and the electronic pattern is formed on the conductive pattern via the solder. The present invention can be applied to electronic components having a structure in which the component body is mounted. The electronic component body can be applied not only to semiconductor pellets but also to general electronic components such as capacitor elements, resistance elements, and inductance elements.
【０００７】[0007]
【発明の効果】以上のように、本発明によれば、基板と
電子部品本体とを接続する半田内にボイドが残留するの
を防止でき、電子部品本体が発生した熱を速やかに基板
に伝達でき、長寿命の電子部品を実現できる。As described above, according to the present invention, it is possible to prevent voids from remaining in the solder that connects the substrate and the electronic component body, and quickly transfer the heat generated by the electronic component body to the substrate. It is possible to realize long-life electronic parts.
【図１】 本発明の実施の形態を示す側断面図FIG. 1 is a side sectional view showing an embodiment of the present invention.
【図２】 図１装置のＡ−Ａ断面図FIG. 2 is a cross-sectional view of the device in FIG.
【図３】 本発明の実施例を示す要部断面図FIG. 3 is a sectional view of an essential part showing an embodiment of the present invention.
【図４】 電子部品の一例を示す一部断面斜視図FIG. 4 is a partial cross-sectional perspective view showing an example of an electronic component.
１ 基板（放熱板） ３ 電子部品本体（半導体ペレット） １２ 吸着コレット １３ カバー １３ａ 筒部 １３ｂ 底部（閉塞部材） DESCRIPTION OF SYMBOLS 1 Substrate (heat sink) 3 Electronic component main body (semiconductor pellet) 12 Adsorption collet 13 Cover 13a Tube part 13b Bottom part (closing member)
Claims (4)
口し基板上で溶融した半田上に電子部品本体を供給する
吸着コレットと、下端が基板上の溶融半田を含む領域に
当接して囲繞する筒部を有するカバーと、カバー内に連
通しカバー及び基板で囲まれた空間内を減圧状態とする
減圧手段とを備えたことを特徴とするマウンタ。1. An adsorption collet for opening an adsorption port for adsorbing an electronic component body at a lower end to supply the electronic component body onto solder melted on a substrate, and a lower end contacting a region containing molten solder on the substrate. A mounter comprising: a cover having an enclosing cylindrical portion; and a decompression unit that communicates with the cover and decompresses a space surrounded by the cover and the substrate.
下端が基板に食い込んで当接することを特徴とする請求
項１に記載のマウンタ。2. The mounter according to claim 1, wherein a lower end of the cylindrical portion of the cover is formed into an acute angle, and the lower end bites into contact with the substrate.
動自在に嵌合する閉塞部材にて閉塞したことを特徴とす
る請求項１に記載のマウンタ。3. The mounter according to claim 1, wherein an upper end of the cylindrical portion of the cover is closed by a closing member into which the suction collet is vertically movably fitted.
させたことを特徴とする請求項３に記載のマウンタ。4. The mounter according to claim 3, wherein the axial middle or lower end of the cylindrical portion of the cover is reduced.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7310575A JPH09148347A (en) | 1995-11-29 | 1995-11-29 | Mounter |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7310575A JPH09148347A (en) | 1995-11-29 | 1995-11-29 | Mounter |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH09148347A true JPH09148347A (en) | 1997-06-06 |
Family
ID=18006893
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7310575A Pending JPH09148347A (en) | 1995-11-29 | 1995-11-29 | Mounter |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH09148347A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105109932A (en) * | 2015-09-11 | 2015-12-02 | 禾邦电子（中国）有限公司 | Feeding device |
-
1995
- 1995-11-29 JP JP7310575A patent/JPH09148347A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105109932A (en) * | 2015-09-11 | 2015-12-02 | 禾邦电子（中国）有限公司 | Feeding device |
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