JP2000195876A - Apparatus for manufacturing semiconductor device - Google Patents

Apparatus for manufacturing semiconductor device

Info

Publication number
JP2000195876A
JP2000195876A JP10368421A JP36842198A JP2000195876A JP 2000195876 A JP2000195876 A JP 2000195876A JP 10368421 A JP10368421 A JP 10368421A JP 36842198 A JP36842198 A JP 36842198A JP 2000195876 A JP2000195876 A JP 2000195876A
Authority
JP
Japan
Prior art keywords
collet
holder
adhesive
semiconductor pellet
pellet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10368421A
Other languages
Japanese (ja)
Inventor
Ryuichi Fujii
隆一 藤居
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Semiconductor Manufacturing Co Ltd
Kansai Nippon Electric Co Ltd
Original Assignee
Renesas Semiconductor Manufacturing Co Ltd
Kansai Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Semiconductor Manufacturing Co Ltd, Kansai Nippon Electric Co Ltd filed Critical Renesas Semiconductor Manufacturing Co Ltd
Priority to JP10368421A priority Critical patent/JP2000195876A/en
Publication of JP2000195876A publication Critical patent/JP2000195876A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/75Apparatus for connecting with bump connectors or layer connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491Disposition
    • H01L2224/4912Layout
    • H01L2224/49171Fan-out arrangements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319Arrangement of the layer connectors prior to mounting
    • H01L2224/83192Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/91Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92Specific sequence of method steps
    • H01L2224/922Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
    • H01L2224/9222Sequential connecting processes
    • H01L2224/92242Sequential connecting processes the first connecting process involving a layer connector
    • H01L2224/92247Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/73Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71

Abstract

PROBLEM TO BE SOLVED: To realize stable mounting of a semiconductor pellet on a radiation plate with a thickness of 10 μm or less with the use of silver paste, which was difficult in prior arts. SOLUTION: In an apparatus for manufacturing a semiconductor device, wherein a chucking collet 17 with a resilient force applied downward is mounted vertically movably on a guide shaft 15 extended downward from the lower end of a collet holder 14 and a pellet 1 chucked by the collet 17, is mounted on a scheduled mount part 2 via a viscous adhesive material 7 disposed therebetween, the collect 17 is made rockable under the condition that the pellet 1 is pushed against the adhesive material 7.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は半導体ペレットをリ
ードフレームなどのマウント予定部に粘稠性接着材を介
してマウントする装置に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an apparatus for mounting a semiconductor pellet on a mounting portion such as a lead frame via a viscous adhesive.

【0002】[0002]

【従来の技術】リードフレームを用いた半導体装置の製
造方法を図6から説明する。図において、1は両面に電
極(図示せず)を有する半導体ペレット、2は半導体ペ
レット1をマウントする放熱板で、取付け用の穴2aが
穿設されている。3は3本一組のリードで、中央のリー
ド3aは放熱板2の一端に接続され、この両側に他のリ
ード3b、3cが平行配置されている。このリード3は
中間部が図示点線で示すタイバ4によって、外端部が連
結条5によってそれぞれ連結され、放熱板2と一体のリ
ードフレーム6を形成している。7は半導体ペレット1
を放熱板2に接着する接着材、8は半導体ペレット1上
の電極とリード3b、3cとを電気的に接続するワイ
ヤ、9は半導体ペレット1を被覆した外装樹脂を示す。
この半導体装置は、移動するリードフレーム6の放熱板
2上に接着材7を定量供給するマウント工程、半導体ペ
レット1上の電極とリード3b、3cをワイヤ8で電気
的に接続するワイヤボンデイング工程、半導体ペレット
1を含む放熱板2の全面を外装樹脂にて被覆し外装する
樹脂モールド工程、外装樹脂9から露呈した図示点線で
示すタイバ4や連結条5などリードフレーム6の不要部
分を切断除去して個々に分離する切断工程を順次通り製
造され、さらに電気的特性検査工程、捺印工程、リード
成形工程などを経て出荷される。ところで、上記マウン
ト工程では、接着材として半田や樹脂系接着材が用いら
れるが、両面に電極を有する半導体ペレットで樹脂系接
着材を用いる場合、耐熱性を有するエポキシ樹脂などの
ベース樹脂に粉末状、フィラメント状、フレーク状の銀
を混練し導電性や熱伝導性を良好にした銀ペーストが一
般的に用いられる。このマウント工程を図7から説明す
る。図において、10はリードフレーム6をガイドし定
ピッチ送りするガイドレール、11はガイドレール10
上の定位置で上下動し、放熱板2上に定量の粘稠性接着
材7を供給する接着材供給部、12は放熱板2上の粘稠
性接着材7上に半導体ペレット1を供給する半導体ペレ
ット供給部で、アーム13の先端にコレットホルダ14
を固定し、このコレットホルダ14の下端から下方に延
びるガイド軸15にスプリング16を挿通して、下端に
吸着コレット17を上下動自在に装着したものである。
コレットホルダ14、ガイド軸15、吸着コレット17
には図示省略するが吸引穴が連通し負圧源に接続されて
いる。この吸着コレット17はガイドレール10の側方
で下面に半導体ペレット1を吸着し、上昇してガイドレ
ール10上に移動し、降下して半導体ペレット1の下面
を粘稠性接着材7に押し付け、吸引を停止して吸着コレ
ット17を上昇させるとマウント作業を完了する。上記
動作中、アーム13を降下させて半導体ペレット1を粘
稠性接着材7に押し付けている時には、降下が停止され
た吸着コレット17に圧縮されたスプリング16からの
弾性力が作用し、吸着コレット17から半導体ペレット
1にかかる荷重が過大にならないようにしている。放熱
板2上に供給された粘稠性接着材7は完全に平坦ではな
いが、放熱板2と吸着コレット17に吸着された半導体
ペレット1とが平行であれば、凹凸のある粘稠性接着材
7上に弾性力を付与した状態で半導体ペレット1を押し
付けていると時間の経過とともに粘稠性接着材7が広が
り、均等な厚みで半導体ペレット1をマウントすること
が出来る。
2. Description of the Related Art A method of manufacturing a semiconductor device using a lead frame will be described with reference to FIG. In the figure, reference numeral 1 denotes a semiconductor pellet having electrodes (not shown) on both surfaces, and reference numeral 2 denotes a radiator plate for mounting the semiconductor pellet 1, and has a mounting hole 2a formed therein. Reference numeral 3 denotes a set of three leads. A central lead 3a is connected to one end of the heat sink 2, and other leads 3b and 3c are arranged in parallel on both sides. The lead 3 is connected by a tie bar 4 indicated by a dotted line in the middle and an outer end is connected by a connecting strip 5 to form a lead frame 6 integrated with the heat sink 2. 7 is a semiconductor pellet 1
Is a bonding material for bonding the electrodes on the semiconductor pellet 1 to the leads 3b and 3c, and 9 is an exterior resin covering the semiconductor pellet 1.
This semiconductor device includes a mounting step of supplying a fixed amount of the adhesive 7 onto the heat sink 2 of the moving lead frame 6, a wire bonding step of electrically connecting the electrodes on the semiconductor pellet 1 and the leads 3 b, 3 c with wires 8, A resin molding step of covering and covering the entire surface of the heat sink 2 including the semiconductor pellet 1 with the exterior resin, and cutting and removing unnecessary portions of the lead frame 6 such as the tie bars 4 and the connecting strips 5 shown by dotted lines exposed from the exterior resin 9. The wafers are sequentially manufactured through a cutting process of separating them individually, and then shipped after an electrical characteristic inspection process, a stamping process, a lead molding process, and the like. By the way, in the mounting step, solder or resin-based adhesive is used as an adhesive. However, when a resin-based adhesive is used as a semiconductor pellet having electrodes on both surfaces, a powdery resin is used as a base resin such as an epoxy resin having heat resistance. In general, silver paste in which conductivity and thermal conductivity are improved by kneading silver in the form of filaments or flakes is generally used. This mounting step will be described with reference to FIG. In the figure, reference numeral 10 denotes a guide rail for guiding the lead frame 6 and feeding the same at a constant pitch.
An adhesive supply unit that moves up and down at the upper fixed position and supplies a fixed amount of the viscous adhesive 7 on the heat sink 2, and 12 supplies the semiconductor pellet 1 on the viscous adhesive 7 on the heat sink 2. The collet holder 14 at the tip of the arm 13
Is fixed, a spring 16 is inserted through a guide shaft 15 extending downward from the lower end of the collet holder 14, and a suction collet 17 is attached to the lower end so as to be vertically movable.
Collet holder 14, guide shaft 15, suction collet 17
Although not shown in the drawing, a suction hole is connected and connected to a negative pressure source. The suction collet 17 adsorbs the semiconductor pellet 1 on the lower surface at the side of the guide rail 10, moves up on the guide rail 10, descends and presses the lower surface of the semiconductor pellet 1 against the viscous adhesive 7, When the suction is stopped and the suction collet 17 is raised, the mounting operation is completed. During the above operation, when the semiconductor pellet 1 is pressed against the viscous adhesive material 7 by lowering the arm 13, the elastic force from the spring 16 compressed on the suction collet 17 whose descent has been stopped acts on the suction collet 17. 17 prevents the load on the semiconductor pellet 1 from becoming excessive. The viscous adhesive 7 supplied on the heat sink 2 is not completely flat, but if the heat sink 2 and the semiconductor pellet 1 adsorbed by the adsorption collet 17 are parallel, the viscous adhesive When the semiconductor pellet 1 is pressed with the elastic force applied to the material 7, the viscous adhesive 7 spreads over time, and the semiconductor pellet 1 can be mounted with a uniform thickness.

【0003】[0003]

【発明が解決しようとする課題】ところが粘稠性接着材
7が均等な厚みに拡がるまでに時間を要し、製造インデ
ックスが長くなるという問題があった。また、電力用半
導体装置ではペレットの発熱量が大きいため、半導体ペ
レット1で発生した熱を効率よく放熱板2に伝達するた
め接着材として半田を用いる必要があり、大電流を扱う
ものでは、電気抵抗を可及的に小さくする必要がある
が、粘稠性接着材7のベース樹脂は絶縁材であり熱伝導
性も銀に比較して格段に劣る。そのため、粘稠性接着材
7の厚みを薄くし粘稠性接着材7に含まれる銀で、半導
体ペレット1と放熱板2とを熱的、電気的に直接的に接
続する必要がある。一方、接着剤供給部11での樹脂の
供給量は、半導体ペレット1の平面寸法と接着材の必要
とされる厚みで決定されるが、この厚みが薄くなると供
給量が少なくなり、供給量のばらつきも顕著となる。そ
のため、少量の接着材を所定厚みに拡げて供給すること
は困難で、供給位置が偏ると放熱板に対して平行に供給
される半導体ペレット1との間で接着材が濡れない部分
ができ、半導体ペレット1を開放するために吸着コレッ
ト17の吸引動作を停止させると、半導体ペレット1が
傾いてマウントされることがあった。このようにして粘
稠性接着材7が偏ると熱伝導や電気抵抗が増加して半導
体装置の性能を十分発揮することができず、半導体ペレ
ット1が傾くとワイヤボンディング作業にも支障を生じ
るという問題があり、特に電力用の半導体装置では鉛を
含む半田をなくすことは困難であった。
However, there is a problem that it takes time for the viscous adhesive 7 to spread to a uniform thickness, and the production index becomes long. In addition, since the power semiconductor device generates a large amount of heat from the pellet, it is necessary to use solder as an adhesive in order to efficiently transmit the heat generated in the semiconductor pellet 1 to the heat radiating plate 2. Although it is necessary to reduce the resistance as much as possible, the base resin of the viscous adhesive 7 is an insulating material, and the heat conductivity is much lower than that of silver. Therefore, it is necessary to reduce the thickness of the viscous adhesive 7 and directly connect the semiconductor pellet 1 and the heat sink 2 thermally and electrically with silver contained in the viscous adhesive 7. On the other hand, the supply amount of the resin in the adhesive supply unit 11 is determined by the planar dimensions of the semiconductor pellet 1 and the required thickness of the adhesive. Variations are also significant. For this reason, it is difficult to supply a small amount of adhesive in a predetermined thickness, and if the supply position is deviated, there is a portion where the adhesive does not wet between the semiconductor pellets 1 supplied in parallel to the heat sink, When the suction operation of the suction collet 17 is stopped to open the semiconductor pellet 1, the semiconductor pellet 1 may be mounted in an inclined manner. When the viscous adhesive 7 is biased in this way, heat conduction and electric resistance increase, and the performance of the semiconductor device cannot be sufficiently exhibited. If the semiconductor pellet 1 is tilted, the wire bonding operation is hindered. There is a problem, and it has been particularly difficult to eliminate lead-containing solder in power semiconductor devices.

【0004】[0004]

【課題を解決するための手段】本発明は上記課題の解決
を目的として提案されたもので、下向きの弾性力が付与
されて上下動する吸着コレットを、その下面に吸着した
半導体ペレットを粘稠性接着材に押し付けた状態で揺動
可能としたことを特徴とする半導体装置の製造装置を提
供する。
SUMMARY OF THE INVENTION The present invention has been proposed for the purpose of solving the above-mentioned problems, and comprises a suction collet which is given a downward elastic force and moves up and down, and a semiconductor pellet adsorbed on the lower surface of the collet. The present invention provides an apparatus for manufacturing a semiconductor device, characterized in that it can swing while being pressed against a conductive adhesive.

【0005】[0005]

【発明の実施の形態】本発明による半導体装置の製造装
置は、半導体ペレットを粘稠性接着材に押し付けた状態
で吸着コレットを揺動可能としたものであるが、この吸
着コレットが連結されたコレットホルダを筒状のホルダ
ガイドに挿通して上下動自在にガイドし、ガイド軸を含
むコレットホルダの軸方向定位置外周にホルダガイドの
内周との間で間隙を形成し、この間隙部分でコレットホ
ルダを揺動させ吸着コレットを揺動可能とすることがで
きる。この場合、揺動可能な吸着コレットに超音波振動
を付与することにより、粘稠性接着材を液状化し半導体
ペレットと粘稠性接着材の接触を滑らかにできる。この
装置に用いる接着材として銀ペーストを用いることが出
来、その厚さが15μm以下であっても良好な接着が出
来る。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS In a semiconductor device manufacturing apparatus according to the present invention, a suction collet can be swung while a semiconductor pellet is pressed against a viscous adhesive, and the suction collet is connected. The collet holder is inserted through the cylindrical holder guide to guide the collet holder up and down freely, and a gap is formed between the inner circumference of the holder guide and the outer circumference of the collet holder including the guide shaft at a fixed axial position. By swinging the collet holder, the suction collet can be swung. In this case, by applying ultrasonic vibration to the swingable suction collet, the viscous adhesive is liquefied, and the contact between the semiconductor pellet and the viscous adhesive can be made smooth. A silver paste can be used as an adhesive for this device, and good adhesion can be achieved even when the thickness is 15 μm or less.

【0006】[0006]

【実施例】以下に本発明の実施例を図1から説明する。
図において、図6及び図7と同一物には同一符号を付し
重複する説明は省略する。図中相異するのは、コレット
ホルダ14を挿通するホルダガイド18を設け、このホ
ルダガイド18をアーム13に固定したことのみであ
る。このホルダガイド18は下端18aの開口径がコレ
ットホルダ14より径小で、内部に配置したコレットホ
ルダ14の落下を防止するとともに、内部で係合してコ
レットホルダ14とホルダガイド18の軸が一致するよ
うにしている。またホルダガイド18の軸方向中間乃至
上端の内径はコレットホルダ14より径大に形成され、
さらに上端18bは閉塞されてコレットホルダ14の上
昇を停止する。この上端閉塞部18bとコレットホルダ
14上端の対向面には微小面積で接触する凹凸部14
a、18cが形成され、ホルダガイド18の軸周りにコ
レットホルダ14が揺動可能としている。また、アーム
13は放熱板2上の降下位置を中心に微小半径内で移動
可能とし、図示省略するがコレットホルダ14が降下位
置にあるときコレットホルダ14とホルダガイド18と
が同軸配置されると同時に互いが同じ位置で対向するよ
うにガイドピンとガイド溝などのガイド機構が形成され
ている。また19は負圧源に接続され、ホルダガイド1
8の上端18bを貫通した穴18dを通りコレットホル
ダ14に接続されてガイド軸15を経由して吸着コレッ
ト17の下端に連通するパイプを示す。以下にこの装置
の動作を説明する。先ず、アーム13を上昇させて、ガ
イドレール10外の半導体ペレット供給ポジション(図
示せず)に吸着コレット17を移動させる。この状態で
は、コレットホルダ17は自重でホルダガイド18の内
部で降下し、吸着コレット17はスプリング16によっ
て最下端位置にある。そして吸着コレット17の下端に
半導体ペレット1を吸着すると、アーム13を上昇、水
平移動させて図2に示すように、ガイドレール10上の
粘稠性接着材7が供給された放熱板2上に移動する。引
き続き、アーム13を降下させて図3に示すように半導
体ペレット1の下面と放熱板2の上面が所定の間隔とな
る高さ位置で停止させる。接着材7のペレット1マウン
ト後の厚みを10μmとするとき、前記高さ位置を接着
材7がない状態で12μm〜15μmと設定しておく。
このように吸着コレット17の高さ位置を設定した状態
で、接着材7上に半導体ペレット1を押し付けると、コ
レットホルダ14はホルダガイド18内で上昇し、凹凸
部14a、18cが係合し、スプリング16が圧縮され
て、吸着コレット17に下向きの弾性力を与える。この
とき放熱板2上に供給された接着材7が図3の点線で示
すように偏っていると、半導体ペレット1によって押し
付けられた接着材7はペレット1と吸着コレット17の
間で図示矢印方向に図示点線位置まで拡がる。しかしな
がらこのような状態では接着材7を半導体ペレット1の
下面全面に拡げることはできない。本発明装置では、図
4にて矢印で示すように吸着コレット17の軸の中心が
移動するようにアーム13を駆動する。これにより半導
体ペレット1の外周は図示点線で示す領域1’内を移動
するが、コレットホルダ14は凹凸部14a、18cの
接触部を中心に揺動するためペレット1は図放熱板2に
対して傾斜し、ペレット1の進行方向前方は間隔が広
く、後方は間隔が狭くなるため、接着材7は放熱板2上
で薄く引き伸ばされる。このようにして接着材7の引き
伸ばし作業が完了すると、吸着コレット17を元の位置
に戻し半導体ペレット1を正規のマウント位置に配置し
てアーム13をわずかに上昇させるとコレットホルダ1
4はガイドホルダ18内で下がり、半導体ペレット1と
放熱板2とが平行になる。こののち、アーム13を降下
させて、半導体ペレット1と放熱板2の間隔が10μm
となるように吸着コレット17を降下させると、両者を
厚み10μmの接着材7でマウントすることが出来る。
このように本発明装置では厚みを15μm以下に薄く、
特に10μm以下に極めて薄く形成するために粘稠性接
着材7の供給量が少ないことによる接着材7の供給位置
のばらつき、供給量のばらつきを生じ易い場合でも接着
材の厚みを薄くして安定的にマウントできる。また、図
1に示す装置のコレットホルダ14の上端に超音波振動
子を固定し、吸着コレット17に吸着された半導体ペレ
ット1を接着材7上で移動させる時に、超音波振動を発
生させ、半導体ペレット1を水平移動させると同時に接
着材7との接触面を微小振動させることにより、接着材
7を液状化させ流動性を向上させて、接着材7の拡がり
を良好にできる。本発明装置では粘稠性接着材として一
般的な溶融半田を用いることが出来るが、ベース樹脂に
導電性と熱伝導性が良好な金属、例えば銀を分散させた
銀ペーストを用いた場合、銀ペーストの必要量が少ない
ため予め放熱板2上で全面に薄く拡げて供給できない場
合でも、その厚みを15μm以下に設定でき、半導体ペ
レット1内部で発生した熱を効率よく放熱板2に伝達す
ることが可能となり、電気的抵抗も小さくできるため、
従来接着材として用いられていた半田を銀ペーストに置
き換えることができ、鉛を含まない電力用半導体装置を
実現できる。
FIG. 1 shows an embodiment of the present invention.
In the drawings, the same components as those in FIGS. 6 and 7 are denoted by the same reference numerals, and overlapping description will be omitted. The only difference between the figures is that a holder guide 18 for inserting the collet holder 14 is provided, and the holder guide 18 is fixed to the arm 13. The opening diameter of the lower end 18a of the holder guide 18 is smaller than that of the collet holder 14 to prevent the collet holder 14 disposed inside from falling, and is engaged internally to make the axes of the collet holder 14 and the holder guide 18 coincide. I am trying to do it. Also, the inner diameter of the holder guide 18 in the axial middle or upper end is formed larger than the collet holder 14,
Furthermore, the upper end 18b is closed to stop the collet holder 14 from rising. The concavity and convexity portion 14 that contacts with a very small area is formed on the opposing surface of the upper end closing portion 18b and the upper end of the collet holder 14.
a, 18c are formed, and the collet holder 14 can swing around the axis of the holder guide 18. The arm 13 is movable within a small radius around the lowering position on the heat sink 2, and although not shown, when the collet holder 14 is at the lowering position, the collet holder 14 and the holder guide 18 are coaxially arranged. At the same time, a guide mechanism such as a guide pin and a guide groove is formed so as to face each other at the same position. 19 is connected to a negative pressure source and the holder guide 1
8 shows a pipe which is connected to the collet holder 14 through a hole 18d penetrating the upper end 18b of the 8 and communicates with the lower end of the suction collet 17 via the guide shaft 15. The operation of this device will be described below. First, the arm 13 is raised, and the suction collet 17 is moved to a semiconductor pellet supply position (not shown) outside the guide rail 10. In this state, the collet holder 17 is lowered by its own weight inside the holder guide 18, and the suction collet 17 is at the lowermost position by the spring 16. When the semiconductor pellet 1 is adsorbed to the lower end of the suction collet 17, the arm 13 is raised and moved horizontally so that the viscous adhesive 7 on the guide rail 10 is supplied onto the heat sink 2 as shown in FIG. Moving. Subsequently, the arm 13 is lowered to stop at a height position where the lower surface of the semiconductor pellet 1 and the upper surface of the heat sink 2 are at a predetermined interval as shown in FIG. When the thickness of the adhesive 7 after mounting the pellet 1 is 10 μm, the height position is set to 12 μm to 15 μm without the adhesive 7.
When the semiconductor pellet 1 is pressed onto the adhesive 7 with the height position of the suction collet 17 set in this way, the collet holder 14 rises in the holder guide 18 and the concave and convex portions 14a and 18c engage, The spring 16 is compressed to apply a downward elastic force to the suction collet 17. At this time, if the adhesive 7 supplied on the heat sink 2 is biased as shown by the dotted line in FIG. 3, the adhesive 7 pressed by the semiconductor pellet 1 is moved between the pellet 1 and the suction collet 17 in the direction indicated by the arrow. At the position indicated by the dotted line. However, in such a state, the adhesive 7 cannot be spread over the entire lower surface of the semiconductor pellet 1. In the apparatus of the present invention, the arm 13 is driven so that the center of the axis of the suction collet 17 moves as indicated by an arrow in FIG. As a result, the outer periphery of the semiconductor pellet 1 moves within a region 1 'indicated by the dotted line in the figure, but the collet holder 14 swings around the contact portion between the concave and convex portions 14a and 18c. Since the gap is inclined, the gap is wide at the front in the traveling direction of the pellet 1 and narrow at the rear, the adhesive 7 is thinly stretched on the heat sink 2. When the stretching operation of the adhesive 7 is completed in this way, the suction collet 17 is returned to the original position, the semiconductor pellet 1 is placed at the regular mounting position, and the arm 13 is slightly raised, so that the collet holder 1 is lifted.
4 falls in the guide holder 18, and the semiconductor pellet 1 and the heat sink 2 become parallel. After that, the arm 13 is lowered and the distance between the semiconductor pellet 1 and the heat sink 2 is set to 10 μm.
When the suction collet 17 is lowered so as to satisfy the following condition, both can be mounted with the adhesive 7 having a thickness of 10 μm.
Thus, the thickness of the device of the present invention is reduced to 15 μm or less,
In particular, since the thickness of the adhesive 7 is extremely small, the thickness of the adhesive 7 can be reduced even when the supply position of the adhesive 7 is small due to a small amount of the adhesive 7 to be supplied. Can be mounted. An ultrasonic oscillator is fixed to the upper end of the collet holder 14 of the apparatus shown in FIG. 1, and when the semiconductor pellet 1 adsorbed by the adsorption collet 17 is moved on the adhesive 7, ultrasonic vibration is generated. By simultaneously moving the pellet 1 horizontally and microvibrating the contact surface with the adhesive 7, the adhesive 7 is liquefied, the fluidity is improved, and the spread of the adhesive 7 can be improved. In the device of the present invention, a common molten solder can be used as the viscous adhesive, but when a metal having good conductivity and heat conductivity is used as the base resin, for example, when a silver paste in which silver is dispersed is used, silver is used. Even when the amount of the paste is small and it is not possible to supply the heat spread over the heat radiating plate 2 beforehand, the thickness can be set to 15 μm or less, and the heat generated inside the semiconductor pellet 1 can be efficiently transmitted to the heat radiating plate 2. And electrical resistance can be reduced,
Solder conventionally used as an adhesive can be replaced with silver paste, and a power semiconductor device containing no lead can be realized.

【0007】[0007]

【発明の効果】以上ように本発明によれば、粘稠性接着
材が少量で、供給位置がばらつき、しかも供給量がばら
つき易い場合でも、半導体ペレットの下面全面に一定の
厚みの接着材層を形成することが出来、特に粘稠性接着
材として銀ペーストを用いることにより鉛を含まない電
力用半導体装置を実現できる。
As described above, according to the present invention, even when the amount of the viscous adhesive is small, the supply position is varied, and the supply amount is easily varied, the adhesive layer having a constant thickness is formed on the entire lower surface of the semiconductor pellet. Can be formed. In particular, by using a silver paste as the viscous adhesive, a power semiconductor device containing no lead can be realized.

【図面の簡単な説明】[Brief description of the drawings]

【図1】 本発明の実施例を示す要部側断面図FIG. 1 is a sectional side view of a main part showing an embodiment of the present invention.

【図2】 図1装置の動作を説明する要部側面図FIG. 2 is a side view of an essential part for explaining the operation of the apparatus in FIG. 1;

【図3】 図1装置による半導体ペレットのマウント状
態を示す要部側面図
FIG. 3 is a side view showing a main part of the semiconductor pellet mounted by the apparatus shown in FIG. 1;

【図4】 図3の上面図FIG. 4 is a top view of FIG. 3;

【図5】 図1装置の接着材が拡げられる状態を示す要
部側面図
FIG. 5 is a side view of a main part showing a state in which an adhesive of the apparatus in FIG. 1 is spread;

【図6】 半導体装置の一例を示す一部断面平面図FIG. 6 is a partial cross-sectional plan view illustrating an example of a semiconductor device.

【図7】 図6に示す半導体装置を製造するためのマウ
ンタの正面図
7 is a front view of a mounter for manufacturing the semiconductor device shown in FIG.

【符号の説明】[Explanation of symbols]

1 半導体ペレット 2 放熱板(マウント予定部) 7 粘稠性接着材 14 コレットホルダ 15 ガイド軸 16 スプリング 17 吸着コレット DESCRIPTION OF SYMBOLS 1 Semiconductor pellet 2 Heat sink (planned mounting part) 7 Viscous adhesive material 14 Collet holder 15 Guide shaft 16 Spring 17 Suction collet

Claims (5)

【特許請求の範囲】[Claims] 【請求項1】コレットホルダの下端より下方に延長させ
たガイド軸に、下向きの弾性力が付与された吸着コレッ
トを上下動自在に装着し、この吸着コレットで吸着した
半導体ペレットをマウント予定部上に粘稠性接着材を介
してマウントする半導体装置の製造装置において、 上記吸着コレットが半導体ペレットを粘稠性接着材に押
し付けた状態で吸着コレットを揺動可能としたことを特
徴とする半導体装置の製造装置。
An attraction collet provided with a downward elastic force is mounted on a guide shaft extending downward from a lower end of a collet holder so as to be vertically movable, and a semiconductor pellet adsorbed by the attraction collet is mounted on a mounting portion. An apparatus for manufacturing a semiconductor device mounted on a viscous adhesive via a viscous adhesive, wherein the adsorbing collet is allowed to swing while the semiconductor pellet is pressed against the viscous adhesive. Manufacturing equipment.
【請求項2】筒状のホルダガイドにコレットホルダを挿
通して上下動自在にガイドし、ガイド軸を含むコレット
ホルダの軸方向定位置外周にホルダガイドの内周との間
で間隙を形成し、吸着コレットを揺動可能としたことを
特徴とする請求項1に記載の半導体装置の製造装置。
2. A collet holder is inserted through a cylindrical holder guide to guide the collet holder so as to be movable up and down, and a gap is formed between the inner periphery of the holder guide and the outer periphery of the collet holder including the guide shaft at a fixed axial position. 2. The apparatus according to claim 1, wherein the suction collet is swingable.
【請求項3】揺動可能な吸着コレットに超音波振動を付
与することを特徴とする請求項1に記載の半導体装置の
製造装置。
3. The apparatus for manufacturing a semiconductor device according to claim 1, wherein ultrasonic vibration is applied to the swingable suction collet.
【請求項4】粘稠性接着材が銀ペーストであることを特
徴とする請求項1に記載の半導体装置の製造装置。
4. An apparatus according to claim 1, wherein the viscous adhesive is a silver paste.
【請求項5】銀ペーストの厚みが15μm以下であるこ
とを特徴とする請求項4に記載の半導体装置の製造装
置。
5. The apparatus according to claim 4, wherein the thickness of the silver paste is 15 μm or less.
JP10368421A 1998-12-25 1998-12-25 Apparatus for manufacturing semiconductor device Pending JP2000195876A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10368421A JP2000195876A (en) 1998-12-25 1998-12-25 Apparatus for manufacturing semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10368421A JP2000195876A (en) 1998-12-25 1998-12-25 Apparatus for manufacturing semiconductor device

Publications (1)

Publication Number Publication Date
JP2000195876A true JP2000195876A (en) 2000-07-14

Family

ID=18491778

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10368421A Pending JP2000195876A (en) 1998-12-25 1998-12-25 Apparatus for manufacturing semiconductor device

Country Status (1)

Country Link
JP (1) JP2000195876A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008205348A (en) * 2007-02-22 2008-09-04 Nec Electronics Corp Semiconductor device and method for manufacturing semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008205348A (en) * 2007-02-22 2008-09-04 Nec Electronics Corp Semiconductor device and method for manufacturing semiconductor device

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