JPH09138167A - Method and instrument for surface temperature measurement - Google Patents

Method and instrument for surface temperature measurement

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Publication number
JPH09138167A
JPH09138167A JP29585995A JP29585995A JPH09138167A JP H09138167 A JPH09138167 A JP H09138167A JP 29585995 A JP29585995 A JP 29585995A JP 29585995 A JP29585995 A JP 29585995A JP H09138167 A JPH09138167 A JP H09138167A
Authority
JP
Japan
Prior art keywords
temperature
solid
hydrogen
melting point
thermometer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP29585995A
Other languages
Japanese (ja)
Inventor
Chikakuni Yabumoto
周邦 籔本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP29585995A priority Critical patent/JPH09138167A/en
Publication of JPH09138167A publication Critical patent/JPH09138167A/en
Pending legal-status Critical Current

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  • Measuring Temperature Or Quantity Of Heat (AREA)

Abstract

PROBLEM TO BE SOLVED: To measure precise surface temperature by providing a surface temperature measuring jig, which is formed in such a way that the metal whose melting point is lower than that of a solid is thinly formed on the solid surface, and a thermometer and a hydrogen detector, which are provided contacting or near the jig, so that the metal detects eutectic temperature with the solid, acting as an object, at heating, and the hydrogen released when reaching melting point is detected. SOLUTION: A solid surface 1 is heated, so that, when metals 2a and 2b reach eutectic temperature or melting point with the solid 1, the hydrogen contained in the metal is released as gas. The hydrogen gas is detected with a hydrogen detector 4, and the temperature is recorded with a thermometer 3. The value is corrected based on the known eutectic temperature and melting point, known from a well known phase chart, etc., for measuring the solid surface with high precision.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【発明の属する技術分野】本発明は、固体の表面温度測
定装置及びその測定方法に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a solid surface temperature measuring device and a measuring method thereof.

【0002】[0002]

【従来の技術】従来、表面の測定においては、(1)温
度計を表面に接触させる、(2)温度計を表面近傍に埋
め込む、(3)放射温度計を用いる、等の方法が一般的
であった。
2. Description of the Related Art Conventionally, in the measurement of a surface, methods such as (1) bringing a thermometer into contact with the surface, (2) embedding the thermometer in the vicinity of the surface, and (3) using a radiation thermometer are generally used. Met.

【0003】(1)及び(2)の所謂接触式の方法で
は、その接触方法や埋め込み方法に工夫を凝らし再現性
の良い測定ができるようにしている。しかし、そこで得
られる温度は表面温度を反映しながらもあくまでも温度
計自体の温度を示すのにすぎなかった。特に、(1)の
接触させる方法では表面とは一点で接するのみで測温部
の大部分は空中に存在し、固体表面が周辺雰囲気温度と
平衡状態である時以外は、温度計の示す温度が表面温度
に等しいという保証はなかった。また、(2)の埋め込
む方法でも表面と内部で温度勾配を持つ場合には、どの
ような温度計であっても測温部がある程度の大きさを持
つので、やはり真の表面温度とは異なってしまうことに
なる。
In the so-called contact method of (1) and (2), the contact method and the embedding method are carefully devised so that the measurement with good reproducibility can be performed. However, the temperature obtained there reflects only the surface temperature, but only indicates the temperature of the thermometer itself. In particular, in the contact method of (1), the temperature indicated by the thermometer is measured only when the solid surface is in equilibrium with the ambient atmospheric temperature, because the temperature measuring part is in contact with the surface only at one point and most of the temperature measuring part exists in the air. Was not guaranteed to be equal to the surface temperature. Even in the embedding method of (2), when there is a temperature gradient between the surface and the inside, the temperature measuring unit has a certain size regardless of the type of thermometer, so it is also different from the true surface temperature. Will be lost.

【0004】(3)の放射温度計は表面温度測定に適し
ているが、表面から放射される赤外光を測定する際、赤
外光を通す窓材(塩化ナトリウム、臭化カリウム等)が
経時変化を起こしたり、測定温度範囲が数100℃以上
の比較的高温に限られてしまったり、測定対象となる物
質が赤外光に対して透明な場合近くの発熱体の温度に影
響されたり、表面状態や形状、平坦度等が昇温とともに
変化する時には放射率が異なり測定誤差の要因となると
いう問題点があった。
The radiation thermometer of (3) is suitable for measuring the surface temperature, but when measuring infrared light emitted from the surface, a window material (sodium chloride, potassium bromide, etc.) that transmits infrared light is used. Changes over time, the measurement temperature range is limited to a relatively high temperature of several hundreds of degrees Celsius or more, and when the substance to be measured is transparent to infrared light, it is affected by the temperature of a nearby heating element. However, when the surface condition, shape, flatness, etc. change with increasing temperature, the emissivity is different and causes a measurement error.

【0005】上述の通り、従来の測定方法によると、温
度計の検知する値が見かけ上のものとなってしまい、膜
形成温度を始めとする様々な表面反応の起こる温度を正
確に決定することが困難となっていた。
As described above, according to the conventional measurement method, the value detected by the thermometer becomes an apparent value, and the temperature at which various surface reactions including the film formation temperature occur can be accurately determined. Was difficult.

【0006】例えば、シリコン(111)表面を終端す
る水素の脱離は概ね400〜500℃、非晶質シリコン
の結晶化は概ね500〜600℃で起こるとされるが、
明確に何度で生じるのか、または、その時の表面の性質
によって反応温度が異なるのか厳密には分からなかっ
た。
For example, it is said that desorption of hydrogen terminating the silicon (111) surface occurs at about 400 to 500 ° C. and crystallization of amorphous silicon occurs at about 500 to 600 ° C.
It was not known exactly how many times it occurred, or whether the reaction temperature was different depending on the surface properties at that time.

【0007】[0007]

【発明が解決しようとする課題】本発明は、共晶温度や
融点という既知の温度に基づき温度計を校正して正確な
表面温度を測定することを目的とする。
SUMMARY OF THE INVENTION It is an object of the present invention to calibrate a thermometer based on known temperatures such as eutectic temperature and melting point to measure an accurate surface temperature.

【0008】[0008]

【課題を解決するための手段】本発明は、対象とする固
体表面にその固体より融点の低い金属を薄く形成した表
面温度測定用治具と、この治具表面に接触もしくは近傍
に設置している温度計と、水素検出器とから成る表面温
度測定系を構成されており、加熱時その金属が対象とす
る固体との共晶温度、または、融点となる時に同時に放
出される水素を検出することを特徴とする。ここで、前
記金属形成の厚さとしては、固体表面温度に十分早く追
随して温度が変化するほどの厚さであり、通常は、数n
mから数μmの厚さである。
According to the present invention, there is provided a surface temperature measuring jig in which a metal having a melting point lower than that of the solid is thinly formed on a target solid surface, and a jig for contacting with or near the surface of the jig. A surface temperature measuring system consisting of a thermometer and a hydrogen detector is configured to detect hydrogen that is released at the same time when the metal reaches the eutectic temperature of the target solid during heating or the melting point. It is characterized by Here, the thickness of the metal formation is such that the temperature changes sufficiently quickly to follow the solid surface temperature, and is usually several n.
The thickness is from m to several μm.

【0009】すなわち、測定対象の固体、温度計、水素
検出器および加熱手段から構成され、前記測定対象の固
体はその表面に該固体よりも融点の低い金属あるいは該
固体との共晶温度が既知の1種又は2種以上の金属の膜
を有することを特徴とする。
That is, it comprises a solid to be measured, a thermometer, a hydrogen detector and a heating means, and the solid to be measured has a metal whose melting point is lower than that of the solid or a eutectic temperature with the solid. It is characterized by having one or two or more kinds of metal films.

【0010】なお、前記膜は数nm〜数μmの厚さ、ま
た、前記温度計は室温以下から該金属の融点以上まで測
定可能なものが、表面温度測定の精度が向上するため好
ましい。
It is preferable that the film has a thickness of several nm to several μm and that the thermometer can measure from room temperature or lower to the melting point of the metal or higher because the accuracy of surface temperature measurement is improved.

【0011】[0011]

【発明の実施の形態】本発明者は、鋭意探求の結果、固
体の表面に形成した金属を含む各種の薄膜を加熱してい
くと、それらの融点、もしくは、基板との反応温度にお
いて、水素を放出する現象を見いだした。水素は、一般
に薄膜を形成する雰囲気である真空中においても、水素
自体、または、水としてある程度存在し、極高真空以外
の場合には薄膜形成中に自然と膜中に取り込まれ、加熱
によって膜が相変化を起こす時に、前記水素は雰囲気中
に放出されるものと推定される。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS As a result of earnest research, the present inventor has found that when various thin films containing a metal formed on the surface of a solid are heated, their melting point or reaction temperature with a substrate causes hydrogen. I found a phenomenon that emits. Even in a vacuum, which is generally an atmosphere for forming a thin film, hydrogen exists to some extent as hydrogen itself or as water, and is taken into the film spontaneously during the thin film formation except for an extremely high vacuum, and the film is heated. It is presumed that the hydrogen is released into the atmosphere when undergoes a phase change.

【0012】[0012]

【実施例】図1は表面温度測定系の概念図であり、1は
対象とする固体、2a、2bは固体表面に形成した種類
の異なる金属薄膜、3は温度計、4は水素検出器であ
る。1の固体表面を加熱していくと、2aや2bの金属
が固体1との共晶温度や融点となる時に、金属中に含ん
でいた水素をガスとして放出する。その水素ガスを4の
水素検出器で検出し、その温度を3の温度計で記録し、
その値を公知の事実となっている相図等で知り得る既知
の共晶温度や融点から校正する。図1では金属薄膜を2
種類形成した例を示したが、当然のこのながら1種類で
も、または、3種類以上でも良い。金属は必ずしも該固
体と共晶を示す必要はない。ここでは温度計を固体表面
に接触させた例を示したが、固体近傍に置いても、ま
た、放射温度計を用いても良い。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1 is a conceptual diagram of a surface temperature measuring system. 1 is a target solid, 2a and 2b are metal thin films of different types formed on the solid surface, 3 is a thermometer, and 4 is a hydrogen detector. is there. When the surface of the solid 1 is heated, when the metal of 2a or 2b reaches the eutectic temperature or the melting point with the solid 1, hydrogen contained in the metal is released as a gas. The hydrogen gas is detected by the hydrogen detector 4 and the temperature is recorded by the thermometer 3
The value is calibrated from the known eutectic temperature and melting point that can be known from the phase diagram which is a known fact. In FIG. 1, two metal thin films are used.
Although the example in which the types are formed is shown, as a matter of course, one type or three or more types may be used. The metal does not necessarily have to exhibit a eutectic with the solid. Although the example in which the thermometer is brought into contact with the surface of the solid is shown here, it may be placed near the solid or a radiation thermometer may be used.

【0013】図2は、幾つかの金属の融点、および、シ
リコンとの共晶温度を図示したものである。括弧内が融
点、大括弧内が金属とシリコンとの共晶温度である。固
体をシリコンとすると、例えばここに図示した金属の薄
膜を表面に形成すると200℃付近から1000℃以上
の点まで幾つかのポイントで標準的な温度を得ることが
できる。
FIG. 2 shows the melting points of some metals and the eutectic temperature with silicon. The melting point is in parentheses, and the eutectic temperature of metal and silicon is in brackets. When the solid is silicon, for example, when a metal thin film shown here is formed on the surface, standard temperatures can be obtained at several points from around 200 ° C to a point of 1000 ° C or higher.

【0014】図3は、図1のような配置の下、1気圧の
アルゴンガス雰囲気中で、温度計と水素検出器とにそれ
ぞれ熱伝対と大気圧イオン化質量分析装置を用い、シリ
コン板上に金属薄膜としてアルミニウム薄膜と金薄膜を
各200nm厚にスパッタ法で形成した場合の放出水素
量と温度のグラフである。それぞれの共晶温度と融点と
により熱伝対の校正を行った。水素放出の開始温度を共
晶温度や融点とした。
FIG. 3 shows a silicon plate on which a thermocouple and an atmospheric pressure ionization mass spectrometer are used as a thermometer and a hydrogen detector in an argon gas atmosphere of 1 atm under the arrangement as shown in FIG. 2 is a graph of the amount of hydrogen released and the temperature when an aluminum thin film and a gold thin film are formed to a thickness of 200 nm each as a metal thin film by a sputtering method. The thermocouple was calibrated by the respective eutectic temperature and melting point. The starting temperature of hydrogen release was set to the eutectic temperature or the melting point.

【0015】図3において、31は金とシリコンの共晶
温度、32はアルミニウムとシリコンの共晶温度、33
はアルミニウムの融点、34は金の融点である。図3を
参照するとわかるとおり、各31、32、33、34に
おいて放出水素量が増加しはじめている。
In FIG. 3, 31 is a eutectic temperature of gold and silicon, 32 is a eutectic temperature of aluminum and silicon, and 33 is a eutectic temperature.
Is the melting point of aluminum, and 34 is the melting point of gold. As can be seen from FIG. 3, the amount of released hydrogen begins to increase in each 31, 32, 33, 34.

【0016】ここではシリコン上の金とアルミニウムの
例を示したが、シリコンと他の金属、あるいは、シリコ
ン以外の種々の固体と金属との組み合わせも可能であ
る。また、雰囲気を真空とする時にも、その雰囲気下で
の状態図が既知のものであれば、同様にして表面温度を
決定することができる。
Here, an example of gold and aluminum on silicon is shown, but silicon and other metals, or various solids and metals other than silicon can be combined. Also, when the atmosphere is evacuated, the surface temperature can be similarly determined if the state diagram in the atmosphere is known.

【0017】[0017]

【発明の効果】以上説明したように、本発明の表面温度
測定系および測定方法を用いると、放出水素量により共
晶温度や融点という既知温度から表面温度を知ることが
でき、その温度に基づき温度計を補正することによって
固体表面の精度の高い温度を測ることができる。
As described above, when the surface temperature measuring system and the measuring method of the present invention are used, the surface temperature can be known from the known temperatures such as the eutectic temperature and the melting point by the amount of released hydrogen. The temperature of the solid surface can be measured with high accuracy by correcting the thermometer.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の表面温度測定系の概念図。FIG. 1 is a conceptual diagram of a surface temperature measuring system of the present invention.

【図2】数種の金属の融点、および、シリコンとの共晶
温度を示す図。
FIG. 2 is a diagram showing melting points of several kinds of metals and eutectic temperatures with silicon.

【図3】放出水素量と温度の関係を示すグラフである。FIG. 3 is a graph showing the relationship between the amount of released hydrogen and temperature.

【符号の説明】[Explanation of symbols]

1 対象とする固体、 2a、2b 固体表面に形成した金属薄膜、 3 温度計、 4 水素検出器、 31 金とシリコンの共晶温度、 32 アルミニウムとシリコンの共晶温度、 33 アルミニウムの融点、 34 金の融点。 1 target solid, 2a, 2b metal thin film formed on solid surface, 3 thermometer, 4 hydrogen detector, 31 eutectic temperature of gold and silicon, 32 eutectic temperature of aluminum and silicon, 33 melting point of aluminum, 34 Melting point of gold.

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】 測定対象の固体、温度計、水素検出器お
よび加熱手段から構成され、 前記測定対象の固体は、その表面に該固体よりも融点の
低い金属および/または該固体との共晶温度が既知であ
る1種又は2種以上の金属の膜を有することを特徴とす
る表面温度測定装置。
1. A solid to be measured, a thermometer, a hydrogen detector and a heating means, wherein the solid to be measured has a metal having a melting point lower than that of the solid and / or a eutectic with the solid on the surface thereof. A surface temperature measuring device having a film of one or more kinds of metals whose temperatures are known.
【請求項2】 請求項1に記載の表面温度測定装置にお
いて、前記測定対象の固体を昇温して前記金属の共晶温
度および/または融点で放出される水素を検出する工程
と、該水素放出時の温度計指示値を水素放出により検知
され前記金属の共晶温度および/または融点によって校
正する工程と、を含むことを特徴とする表面温度測定方
法。
2. The surface temperature measuring device according to claim 1, wherein the temperature of the solid to be measured is raised to detect hydrogen released at a eutectic temperature and / or a melting point of the metal, and the hydrogen. Calibrating the indicated value of the thermometer at the time of release with the eutectic temperature and / or the melting point of the metal detected by the release of hydrogen.
JP29585995A 1995-11-14 1995-11-14 Method and instrument for surface temperature measurement Pending JPH09138167A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP29585995A JPH09138167A (en) 1995-11-14 1995-11-14 Method and instrument for surface temperature measurement

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP29585995A JPH09138167A (en) 1995-11-14 1995-11-14 Method and instrument for surface temperature measurement

Publications (1)

Publication Number Publication Date
JPH09138167A true JPH09138167A (en) 1997-05-27

Family

ID=17826120

Family Applications (1)

Application Number Title Priority Date Filing Date
JP29585995A Pending JPH09138167A (en) 1995-11-14 1995-11-14 Method and instrument for surface temperature measurement

Country Status (1)

Country Link
JP (1) JPH09138167A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011247613A (en) * 2010-05-24 2011-12-08 Nippon Telegr & Teleph Corp <Ntt> Analytical method
JP2014509391A (en) * 2011-02-09 2014-04-17 シーメンス エナジー インコーポレイテッド Apparatus and method for temperature mapping of turbine components in a high temperature combustion environment
CN113842964A (en) * 2021-09-18 2021-12-28 蚌埠学院 Binary alloy eutectic melting crucible

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011247613A (en) * 2010-05-24 2011-12-08 Nippon Telegr & Teleph Corp <Ntt> Analytical method
JP2014509391A (en) * 2011-02-09 2014-04-17 シーメンス エナジー インコーポレイテッド Apparatus and method for temperature mapping of turbine components in a high temperature combustion environment
CN113842964A (en) * 2021-09-18 2021-12-28 蚌埠学院 Binary alloy eutectic melting crucible

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