KR100629015B1 - Method and device for calibrating measurements of temperatures independent of emissivity - Google Patents

Abstract

The present invention relates to a method and apparatus for calibration of temperature measurements performed using one or more first radiation detectors to measure one thermal radiation emitted by one or more substrates. The method includes heating a reference substrate comprising at least one reference material having a known melting point, measuring heat radiation of the reference substrate during the heating step and / or during the cooling period after the heating step, and the measuring step Comparing the measurement plateaus generated during the process to known melting points. Also disclosed is an apparatus for carrying out the method according to the invention.

Description

METHOD AND DEVICE FOR CALIBRATING MEASUREMENTS OF TEMPERATURES INDEPENDENT OF EMISSIVITY}

The present invention relates to a method and apparatus for calibration of temperature measurements performed with at least one first radiation detector for measuring heat radiation emitted by at least one substrate.

For example, methods and apparatus of this type are known in the context of the manufacture of semiconductor substrates in reaction chambers. In such chambers, methods that are independent of emissivity are preferred, where the thermal radiation generated from the first substrate is compared with the actual temperature of the substrate which is almost independent of the emissivity. This method compensates for the difference in emissivity between different substrates. In order to achieve an emissivity independent measuring method, for example, the so-called "ripple technique" described in US Patent No. 5 490 728 and German Patent Application No. 197 54 366A (unpublished) filed by the same applicant and The cavity principle is used in which the mirror-like chamber is closed on one side by the article to be measured. For example, another method using the cavity principle is described in German Patent Application No. 197 37 802 (not published) filed by the same applicant, the description of which is omitted in this application to avoid repetition. Wafers are used in a known manner and a thermal element (TC B thermocouple) is attached to the top or bottom of the wafer. As long as TCs are made from wire pairs of the same series, experience has shown that the measurement deviation between TCs is very small. This deviation ranges from about 1 ° K to 2 ° K. In this case, in particular, since small deviations between TCs are an important issue, based on these small deviations, the temperature measurement can be modulated independently of the emissivity. However, while the uncertainty in the measurement of absolute temperature is substantially very large, the measurement uncertainty is in the range of 2K to 3K at most and less than 10K to 20K in less preferred cases.

This measurement uncertainty is caused by different factors. Among these factors, the thermoelectric power of the thermocouple depends not only on the temperature but also on the alloy, but is affected by some deviation determined by the production factor. Furthermore, a plurality of electrical connections are also provided between the TC and its amplifiers, which also constitute a thermocouple, so that asymmetrical conversion generates additional thermoelectric power. In addition, the adhesion point for the TC has a different degree of absorption than the wafer surface surrounding the adhesion point. Therefore, the equilibrium temperature of the TC is not only determined by the heat transferred between the wafer and the ideal TC, but rather the temperature of the TC is also affected by the heat radiated from the lamp, which is often not exactly the temperature of the substrate. Because it does not.

Therefore, temperature uncertainty arises mainly from error sources that affect all TCs in the same way as measurement errors. Therefore, even if TC has a low deviation, TC is a measurement recorder with large absolute value measurement uncertainty.

To achieve improved measurement accuracy, the TC is calibrated with a TC calibrator, ie in an oven with a very uniform temperature distribution inside by absolute temperature measurement. A plurality of uncalibrated TCs are placed in the oven along with the reference TCs so that the reference TCs themselves are calibrated by a separate calibration operation using a pyrometer for the main reference. Such multiple calibrations are very expensive because they require different equipment and involve many steps, and are more likely to cause errors in the calibration process, resulting in measurement uncertainty again at the end of the process.

Moreover, a calibration apparatus and method of a temperature sensor in which a wafer is provided with a plurality of calibration islands made of a reference material having a melting point in the range of 150 ° C to 550 ° C is known from US Pat. No. 5,265,957. While this wafer is being heated, the effective reflectance of the wafer is measured by the temperature sensor and the first step change in the output signal of the temperature sensor is equal to the wafer temperature at the same melting point of the reference material. The temperature sensor calibration parameters are then calculated. This principle is shown in FIG. The signal I of the temperature sensor (pyrometer) is recorded as a function of time t while the wafer is being heated. Since the wafer reflectivity changes when the reference material phase transitions, the reference material should be arranged close to the surface to fall within the penetration depth range of the measurement wavelength. The step change described above in the pyrometer signal occurs at the phase transition of the reference material as shown in FIG. 6. The method shown in US Pat. No. 5,265,957 has substantial disadvantages. For example, no pyrometer value can be assigned to the melting point T _m1 because of the step change in the pyrometer signal, resulting in a systematic measurement error ΔI for the calibration method.

It is therefore an object of the present invention to provide a method and apparatus of the above-cited forms which calibrate temperature measurements very precisely in a simple and cost effective manner.

This object is achieved by a) heating a reference substrate 10 comprising at least one reference material 17 having a known melting point to a melting point and / or a temperature above the melting point, b) after the heating step and / or after the heating step. Measuring the thermal radiation of the reference substrate 10 during the cooling period, and c) comparing the measurement plateau occurring during the measuring step with a known melting point.

Heating the reference material located on the reference substrate raises the temperature of the reference substrate and the reference material until the melting point of the reference material is reached. Once the melting point is reached, the temperature no longer increases until all the reference material is changed to liquid, ie, until latent heat is transferred to the reference material. While cooling, this treatment is in reverse with known methods. Since the melting point of the reference material is known precisely, it is possible to compare the known melting point with the measurement pleto, which is measured during heating and / or during the cooling period after heating, so that a simple calibration of the absolute temperature measurement can be achieved. .

Preferably, the measurement pleto is determined during the heating and / or cooling process of the reference substrate. However, since the reference material in the molten state is particularly well in contact with the reference substrate by thermal conductivity before completing solidification, the measurement pleto is preferably determined during the cooling period.

The method according to the invention has a substantial advantage compared to the method of US Pat. No. 3,265,957 described above. Since the method does not depend on the change in emissivity of the reference substrate, it is possible to surround the reference material with a thick protective coating or to place the reference material inside the reference substrate. It is not necessary to place the reference material near the substrate. This advantage is that the reference material may not contaminate the processing chamber. This is a fundamental requirement for the widespread use of reference substrates in semiconductor technology.

As shown in FIG. 7, an additional advantage is that it is possible to generate a measuring plato at the melting point. In contrast to the method described in US Pat. No. 5,265,957, the method according to the present invention allows the assignment of the radiation detector signal to the melting point clearly due to the pleto. The aforementioned system error DELTA I is minimized by the method according to the invention.

Moreover, the formation of pleto has the advantage that during time t _p , thermal equilibrium occurs between the reference material and the reference substrate, minimizing the possible temperature difference. It is also advantageous that the optical specification of the reference substrate surface does not change during the method according to the invention. For example, if the reference substrate (except the reference material located therein) is selected from the same material as the substrate to be subsequently processed (eg, Si), the reference substrate has the same emissivity as this substrate. This means that the radiation detector can be directly calibrated while the substrate is being processed, without compensating for emissivity. The case where correction is to be made or the emissivity must be compensated is when the substrate has a different (spectral) emissivity due to different surface properties, for example. If it is possible to process the substrate without compensating emissivity, only one radiation detector offers the additional advantage that temperature measurement is needed. Since the emissivity of the reference substrate surface changes when the phase changes in this method, such a temperature measuring method with only one radiation detector is impossible with the method described in US Pat. No. 5,265,957.

The mass of the reference material should be at least 1% of the total mass of the reference substrate so that the pleto is easily metrologically detected. Since the specific heat of fusion is several times the specific heat capacity, this low mass ratio can be selected. In order that the optical properties of the reference substrate surface do not change, the protective coating of the reference material is preferably selected to be equal to at least three times the optical attenuation length that the protective coating has for the measurement wavelength of the radiation detector.

In order to achieve an emissivity independent temperature measurement according to a particularly preferred embodiment of the invention, the emitted radiation is modulated with at least one characteristic parameter, preferably with at least one radiation heat source that is actively modulated. As the material is heated, radiation emitted from the at least one radiant heat source is detected with at least one second radiation detector, and the radiation detected by the first radiation detector is adapted to compensate the radiation of the radiation source reflected by the reference substrate. Correction by radiation detected from the second radiation detector.

Because of the known known modulation of the radiation source, one can distinguish between the radiation value emitted by the article itself, which is necessary to determine the temperature of the reference substrate and the reflected radiation of the radiation source. For further advantages and details on radiation assessment and modulation of radiation sources, known as "ripple" techniques, see U.S. Patent 5,490,728 and German Patent Application 197 54 386A (unpublished) of the same applicant referred to herein. Please.

In this way it is possible to achieve an absolute temperature calibration without having to know the emissivity of the reference substrate. In order to adjust the measurement system independently of emissivity, TC wafers can be used for preliminary calibration, in which case the minimum deviation between the TCs is a major issue.

Preferably, modulation is used to characterize the emissivity emitted from the radiation source when the emissivity detected by the first radiation detector is corrected, which is very simple and reliable between radiations emitted by the reference substrate itself that must be measured in practice. Can be distinguished precisely.

The radiation emitted from the radiation source is preferably amplitude-modulated, frequency-modulated and / or phase-modulated. Depending on the particular quality and requirements, the modulation form is selectable, whereby the modulation form can be chosen not only with respect to the reliability and simplicity of the modulation method, but also with respect to the evaluation and detection methods.

According to a preferred embodiment of the invention, the radiant heat source comprises a plurality of lamps and one or more radiations from one of the lamps are modulated, but preferably the radiation of all lamps is modulated.

Preferably the degree of modulation or depth of modulation is controlled so that the degree of modulation or depth of modulation is known and the detection and evaluation is simplified.

Preferably, the measurement of thermal radiation emitted by the substrate is performed on the side of the substrate which constitutes at least a portion of the cavity emitter, so that an emissivity independent temperature measurement is also achieved.

According to another preferred embodiment of the present invention, a plurality of reference materials, each having a different melting point, is provided on the reference substrate, and the measuring platoes are determined during the heating and / or cooling periods and respectively compared with one of the known melting points.

The present invention can be very advantageously used to calibrate the temperature measurement in connection with an apparatus for the heat treatment of the substrate in an oven in which the substrate is heated and cooled to the most precisely possible predefined temperature as quickly as possible.

The above-mentioned object is to provide a reference material with a known melting point applied to the reference substrate, a radiation source for heating the reference substrate on which the emitted radiation can be preferably actively modulated by a modulated device having at least one characteristic parameter. And at least one second radiation detector for measuring radiation emitted by the at least one radiation source, and the radiation detected by the second radiation detector to the reference substrate for correcting radiation detected by the second radiation detector. It is also achieved in accordance with the present invention using a calibration device for temperature measurement of the type described above that includes a mechanism for compensating the radiation of the radiation source reflected by it.

The use of a reference substrate provided with a reference material having a melting point in combination with active modulation provides the aforementioned advantages of simple calibration of emissivity independent temperature measurements.

According to one embodiment of the invention, the apparatus has a cavity emitter formed at least in part by a substrate.

The cavity emitter is preferably formed by a mirrored chamber in which one wall is at least partially formed by the substrate. Preferably the cavity emitter may also be formed by a plate disposed parallel to the substrate.

According to a preferred exemplary embodiment, a covering is provided that provides a chamber for receiving the reference material between the reference material and the reference substrate. Preferably the chamber is sealed from around it to prevent the reference material from contaminating the device being calibrated. In order to provide a uniform pressure (partial pressure of the reference material) in the chamber, the chamber may preferably be evacuated, through which microtear any liquid reference material is present under the pressure of the remaining gas heated. It also relates to the advantage of not being compressed. The entire reference substrate is preferably glazed.

Preferably the reference substrate has at least one depression for accommodating at least one reference material so that the bottom of the reference substrate in the region of the reference material is as thin as possible to keep the temperature difference between the bottom of the reference substrate and the reference material as small as possible. . Multiple depressions are preferred for reasons of stability. The walls of the depressions are preferably inclined to avoid mechanical tensions due to different coefficients of expansion between the reference substrate and the reference material.

Preferably the reference substrate has the same size and / or shape and / or the same weight as the substrate whose temperature is to be measured after calibration in order to process the reference substrate with the available handling system in which the substrate is measured. In this way calibration or re-calibration can be automated. The advantage of the present invention over conventional TC substrates is that in addition to improving accuracy and reproducibility, the TC substrate cannot be handled automatically because of the connecting wire and the wire must be clamped after the TC substrate is inserted. This situation does not occur in the above-mentioned reference substrate.

At least one reference material is a metal, since the melting point of the metal, in particular the melting point of the highly purified metal, is known or very precisely defined.

According to another embodiment of the present invention, different reference materials with different melting points are provided on the reference substrate to facilitate calibration at different temperatures.

Preferably at least one reference material may be disposed at other points on the reference substrate to ensure that the reference material covers the field of view of the first radiation detector.

Preferably the reference substrate comprises at least one reference material on the side facing away from the radiation detector. In order to achieve high radiation in the reference substrate, a structure such as a microchannel is preferably provided on the side of the reference substrate facing the radiation detector.

A plurality of reference substrates with different optical coatings is provided to obtain the main criteria with different emissivity. In order to obtain key criteria with different emissivity, complex preliminary calibration using a TC wafer can be completely eliminated.

Because of the relatively simple manufacture of the ceramic material and the thermal properties of the ceramic material, the reference wafer is preferably made of ceramic.

The exemplary embodiment is well suited to calibrating an apparatus for rapid heat treatment of substrates in an oven that rapidly heats and cools the substrate at the most accurate pre-specified temperature possible.

DETAILED DESCRIPTION Hereinafter, the present invention will be described in more detail with reference to an example of an apparatus for heating a semiconductor wafer with reference to the accompanying drawings.

1 is a schematic longitudinal cross-sectional view of a rapid heating system for processing a semiconductor wafer.

FIG. 2 is a cross-sectional view taken along the line II-II in FIG. 1.

3 is a top view of a reference substrate according to the present invention with the covering omitted for clarity.

4 is a cross-sectional view of a reference substrate with a covering according to the present invention.

5 is a partially enlarged cross-sectional view of a reference substrate.

6 is a graph illustrating a temperature / time curve for a reference substrate according to the prior art.

7 is a graph illustrating a temperature / time curve for a reference substrate according to the present invention.

8 is a diagram illustrating a reference substrate on which thermal elements are mounted.

An embodiment of the rapid heating oven for processing the semiconductor wafer 2 shown in FIGS. 1 and 2 has a reaction chamber 1, preferably comprising silica glass, with the semiconductor wafer 2 disposed therein. The reaction chamber 1 is surrounded by a housing 3 mounted on top and bottom of the lamps 4, 5 radiating towards the reaction chamber 1. The outlined pyrometer 6 (especially FIG. 2) with a large angle of incidence measures the radiation emitted by the semiconductor wafer 2 and the radiation from the lamp 5 reflected onto the semiconductor 2, the lamp being In the exemplary embodiment shown, it consists of a bar lamp. For example, this type of arrangement is described in German Patent Application No. 197 37 802A (unpublished) or German Patent Application No. 197 54 386A (unpublished) filed by the same applicant, for example to avoid repetition. See these resources, which are explained in conjunction with.

An additional pyrometer 7 detects light emitted from the lamp 5 which is transmitted directly through the optical line or the light channel 8. In order to avoid repetition of this so-called lamp pyrometer 7 and the arrangement for irradiating the lamp pyrometer 7 with light from the lamp 5, the German patent application filed by the same applicant described together in the exemplary embodiment See 197 54 385A (not published).

3 and 5 show a reference substrate according to the invention in the form of a reference wafer 10 used to calibrate the pyrometer 6 shown in FIGS. 1 and 2. The reference wafer 10 has a flat and round shape that mainly matches the shape of the semiconductor wafer 2 to be processed. The reference wafer 10 has a main or base body 12 made of ceramic material and has a circular elevation in the center area. A circular depression 15 for receiving the reference material in the form of a metal melt inlay having a known melting point is provided in the region of the ridge 13. In order to achieve more desirable surface coverage, the depressions may also be hexagonal (honeycomb shaped) and disposed over the entire cross section of the base body 12. In order to avoid tension between the base body 12 and the metal melt insert, the tablet metal is placed loosely into the depression prior to use, and then always solidified to the maximum allowable diameter after the first melt. As the tablet metal cools further, the metals are pulled together more rapidly than the body. While the melting process is repeated, the metal then melts just before mechanical tension occurs.

As shown in FIG. 3, nineteen circular depressions 15 are provided and one metal melt insert 17 having a known melting point is located in each depression. However, the number of depressions 15 is not critical to the present invention and can be adapted to the stability requirements of the base body 12 or other parameters. For example, it is possible to provide only one depression for accommodating the metal melt insert 17, but it should be noted that the depression is located in the field of view of the pyrometer 6. According to a further embodiment, different metal melt inserts with different melting points are provided in the depressions rather than metal melt inserts 17 having the same known melting point.

A covering 20 sealingly connected to the base body 12 in the edge region 22 of the covering is located above the ridge 13 and the metal melt insert 17. This connection can be accomplished in a known manner by gluing, welding, or any other known method. The chamber 23 to be vacuumed is formed between the covering 20 and the ridge 13 or the metal melt insert 17. Rather than providing a covering, one can think of glazing the entire reference wafer or providing a combination of these two structures.

Although the reference substrate is described with respect to particular example embodiments, it should be noted that the reference substrate may be embodied or formed differently without departing from the spirit of the invention. For example, the ridges 13 in the central region may be absent, and the depressions 15 may be embodied directly in the base body 12. Instead of providing the metal melt insert 17 in the depression of the base body 12, it is also possible to provide the melt insert flat on the base body without the depression. It is also possible to construct the surface of the base body facing away from the reference material in order to increase the radiation of the metal melt insert 17.

In order to calibrate the pyrometer 6 of the aforementioned device for processing a semiconductor, the reference wafer 10 is introduced into the reaction chamber 1 by means of an available handling device (not shown in more detail) and, in fact, FIG. It flows into the same position as the semiconductor wafer 2 shown in FIG. The reaction chamber is then closed and the reference wafer 10 is heated by lamps 4 and 5 so that the pyrometer 6 measures the radiation emitted by the reference wafer 10 and the resulting radiation of the lamp 5. do. During the heating process, the temperature of the metal melt insert increases in the same way until the melting point is reached. It no longer increases from the melting point to the temperature of the metal melt insert. Because of the desired thermal conduction between the metal melt insert 17 and the reference wafer 10 and the resulting rapid temperature adaptation, the latent heat is melted until the metal melt insert 17 is completely changed from solid to liquid. The temperature of the reference wafer 10 also does not continue to increase until it is transferred to the insert 17. The temperature kept the same is measured by the pyrometer 6 as the measuring pleto and compared with the known melting point using an apparatus (not described in more detail).

After the metal melt insert 17 is completely melted and no longer absorbs latent heat, the temperature of the reference wafer 10 rises again. The heating process is then stopped and the reference wafer 17 is cooled or cooled.

During the cooling process, the sequence of processes occurs in reverse. The metal melt insert 17 is cooled to the freezing point and then the temperature is eventually constant until the metal melt insert 17 releases all of its latent heat and reappears as a solid. This in turn becomes the measurement pleto in the pyrometer measurement which can be compared with the known melting point of the metal melt insert 17.

Determining the measurement pleto during the cooling process is such that the temperature between the metal melt insert 17 and the reference substrate 10 in the molten state is such that the metal melt insert 17 is in better thermal contact with the reference substrate 10. This is advantageous because the equilibrium is further accelerated.

Since the thermal radiation measured from the reference substrate can vary depending on the emissivity of the substrate, in order to achieve independence from the emissivity during the process described above, the radiation emitted by the lamps 4 and 5 is preferably an active and finite method. Radiation modulated by the lamp 5 is measured directly with the lamp pyrometer 7. The output signal of the pyrometers 6, 7 is sent to an analyzer (not shown). The radiation emitted by the reference wafer 10 is calculated by comparing radiation falling to the pyrometer 6, which consists of radiation emitted and reflected by the wafer 10, and radiation detected by the pyrometer 7. This is possible because the radiation emitted by the lamp 5 is modulated in a known manner. This modulation is also included in the radiation recorded by the pyrometer 6 and captured by the wafer pyrometer 6 by comparing or relating to the modulation depth or degree of modulation of the radiation recorded by the pyrometers 6, 7. It is possible to compensate for lamp radiation reflected by the radiation path reference wafer 10. Therefore, the relationship between the emitted radiation and the radiation reflected by the wafer 10 can be determined to enable the calculation of the emissivity of the wafer 10. Based on the emissivity, the known melting point of the metal melt insert 17 can now be compared with the radiation emitted by the reference wafer 10 to provide a calibration that relates to the absolute temperature.

For example, such modulation and calculation of radiation emitted by a substrate is disclosed in German Patent Application No. 197 54 386A (unpublished) and US Patent No. 5 490 728 filed by the same applicant. In order to avoid repetition, these materials should be referred to together with the contents described in the exemplary specification.

In order to achieve an essentially emissivity independent measurement, instead of the ripple technique described above, for example, a so-called cavity technique may also be used, in which a mirror chamber is used to mimic the cavity emitter.

The following describes the dimensioning of the reference substrate. In order to heat the reference substrate as uniformly as possible, the thermal mass per unit surface area is constant with respect to the substrate. This can be accomplished by changing the thickness of the reference material to satisfy the following equation.

Where d ₁ , d ₂ , d ₃ , and d ₄ are the thickness of the reference substrate in the molten metal insert, the thickness of the molten metal, the thickness of the covering of the molten metal, and the reference substrate in the region without the molten metal insert. The thicknesses are respectively shown, with p ₁ , p ₂ , p ₃ , and p ₄ and c ₁ , c ₂ , c ₃ , and c ₄ representing the relevant density and heat capacity, respectively.

The power density P (power / surface area) and heating rate R (lamp speed) of the RTP system can be simplified using the following formula.

This relationship defines the power density P required at a particular ramp rate R to uniformly heat the reference substrate (see Equation 1). When the reference material reaches the melting point, energy E _L is required (for surface area) to melt the reference material, and energy E _L is calculated by the following equation.

Where c _S represents the specific heat of fusion to the reference material. If the power density P of the RTP system does not change, the pleto time t _p (see FIG. 7) can be calculated using the following equation.

Here, E _L and P can be obtained from equations (2) and (3). Therefore, the product of the pleto / time / lamp speed can be calculated by the following equation.

These few material specific parameters and current layer thicknesses are included only. Thus, when d ₁ is selected, the thickness of the molten metal (d ₂ ) and the thickness of the reference substrate (d ₄ ) in the edge region are calculated with the prespecified product (Z) given using equations (5) and (1). Can be. For singularity, d ₃ is assumed to be zero. However, in particular when c ₁ = c ₃ , it may be advantageously selected to d ₃ = d ₁ . If d ₁ = 1 mm (or d ₁ + d ₃ = 1 mm when c ₁ = c ₃ ), a reference substrate made of silicon at a pleto / hour / lamp velocity drop at 100 K for germanium or aluminum molten metal For the molten metal thickness d ₂ is 0.071 mm or 0.2 mm, whereby the outer range of the reference substrate has a thickness d ₄ of 1.074 mm or 1.3 mm.

Claims (37)

Method for calibrating temperature measurements performed with one or more first radiation detectors (6) for measuring thermal radiation emitted by one or more substrates (2) Heating a reference substrate (10) comprising at least one reference material (17) having a known melting point above the melting point or above the melting point; Measuring heat radiation of the reference substrate (10) during the heating step or during the cooling period after the heating step; And Comparing the measurement plateau occurring during the measuring step with the known melting point Method of calibration of temperature measurement comprising a. The method of claim 1, At least one radiation source (4, 5) is used to heat the reference substrate (10). The method of claim 2, The radiation emitted from the one or more radiation sources 5 is detected by one or more second radiation detectors 7, the radiation emitted by the one or more radiation sources 5 is modulated with one or more characteristic parameters, and The radiation detected by the first radiation detector 6 to compensate for the radiation of the radiation source 5 reflected from the reference substrate is corrected by the radiation detected by the second radiation detector 7. Calibration method of temperature measurement The method of claim 3, wherein Modulation for characterizing radiation emitted by the radiation source (5) is used to correct radiation detected by the first radiation detector (6). The method of claim 3, wherein The radiation emitted by the radiation source (5) is amplitude-modulated, frequency-modulated and phase-modulated. The method according to any one of claims 2 to 5, The radiation source (5) is formed of a plurality of lamps, wherein the radiation of at least one of the lamps is modulated. The method according to any one of claims 3 to 5, And the modulation depth or modulation degree of the radiation is controlled. The method according to claim 1 or 2, The method of correcting a temperature measurement, characterized in that the measurement of thermal radiation emitted by the reference substrate (10) is carried out on the side of the reference substrate (10) facing the cavity emitter. The method according to any one of claims 1 to 5, A plurality of reference materials 17, each having a different melting point, is provided on the reference substrate 10, and each measurement plato detected during the heating or cooling process is compared with one of the known melting points. A calibration method of a temperature measurement characterized by the above-mentioned. The method according to any one of claims 1 to 5, And the reference substrate for calibrating the apparatus for heat treatment of the substrate is introduced into the heat treatment apparatus. Apparatus for calibrating temperature measurements performed with one or more first radiation detectors 6 for measuring thermal radiation emitted by one or more substrates 2 and essentially independent of emissivity, One or more reference materials 17 provided on the reference substrate 10 and having a mass of at least 1% of the reference substrate 10 and having a known melting point; One or more radiation sources (4, 5) for heating the reference substrate (10) to or above the melting point temperature of the reference substrate (10); And A device for comparing the measured value pleto occurred during heating of the substrate in the first radiation detector to the known melting point Calibration device for temperature measurement comprising a. The method of claim 11, At least one second radiation detector (7) for measuring radiation emitted by said at least one radiation source (5); A modulation device for modulating radiation emitted by the one or more radiation sources (5) having one or more characteristic parameters; And And a correction device for correcting the radiation detected by said first radiation detector (6) using the radiation detected by said second radiation detector (7). The method of claim 12, The radiation source (4, 5) is formed of a plurality of lamps, wherein the radiation of one or more of the lamps can be modulated. The method of claim 12, Device for calibration of temperature measurements, characterized in that the modulation depth or the degree of modulation of the radiation emitted by the radiation source (4, 5) is controllable. The method of claim 11, And a cavity emitter formed at least in part by the substrate. The method of claim 15, And the cavity emitter is formed by a mirrored chamber in which at least one wall region is formed by the substrate. The method of claim 15, And the cavity radiator is formed in an intermediate space between the substrate and a plate disposed parallel to the substrate. The method according to any one of claims 11 to 17, And a covering (20) on the reference substrate (10) and positioned over the reference material (17). The method of claim 18, And a chamber (23) defined between said covering (20) and said reference substrate (10). The method of claim 19, And the chamber (23) is sealed to the ambient environment of the chamber. The method of claim 19, And the chamber (23) is vacuumed. The method according to any one of claims 11 to 17, And the reference substrate (10) is glazed. The method according to any one of claims 11 to 17, And said reference substrate (10) has at least one depression (15) for receiving said at least one reference material (17). The method of claim 23, wherein A device for calibrating temperature measurements, characterized in that the wall of the depression (15) is inclined. The method according to any one of claims 11 to 17, And the reference substrate (10) has the same size, shape and weight as the substrate (2) whose temperature is measured after the calibration. The method according to any one of claims 11 to 17, At least one reference material (17) is a metal. The method according to any one of claims 11 to 17, Different reference materials (17) having different melting points are provided on the reference substrate (10). The method according to any one of claims 11 to 17, Wherein said at least one reference material (17) is disposed at different points on said reference substrate (10). The method according to any one of claims 11 to 17, The at least one reference material (17) is provided on the side of the reference substrate (10) facing away from the first radiation detector (6). The method according to any one of claims 11 to 17, One side of the reference substrate (10) facing the first radiation detector (6) has structures, characterized in that it has a structure. The method according to any one of claims 11 to 17, Wherein said plurality of reference substrates (10) each have different optical coatings. The method according to any one of claims 11 to 17, And the reference substrate (10) is made of a ceramic material. The method according to any one of claims 11 to 17, Wherein said device is suitable for calibrating a device for rapid heat treatment of substrates in an oven. As a reference substrate for temperature calibration, And a reference material having a known melting point, wherein the reference material is disposed inside the reference substrate, and the reference material has a mass of at least 1% of the mass of the reference substrate. The method of claim 34, wherein And the reference material is surrounded by a substrate material having a thickness of at least three times the optical attenuation lengths of the selected wavelength. 36. The method of claim 35 wherein The thickness is a reference substrate for temperature calibration, characterized in that 3㎛ or more. The method according to any one of claims 34 to 36, A reference substrate for temperature calibration, characterized in that the thermal mass per unit surface area is constant with respect to the substrate.

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