JPH09115986A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPH09115986A JPH09115986A JP27301395A JP27301395A JPH09115986A JP H09115986 A JPH09115986 A JP H09115986A JP 27301395 A JP27301395 A JP 27301395A JP 27301395 A JP27301395 A JP 27301395A JP H09115986 A JPH09115986 A JP H09115986A
- Authority
- JP
- Japan
- Prior art keywords
- tape
- chip
- adhesive
- wafer
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68318—Auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
- H01L2221/68322—Auxiliary support including means facilitating the selective separation of some of a plurality of devices from the auxiliary support
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は半導体装置の製造方
法に係り, 特に紫外線硬化型テープ (以下UVテープ) 上
に接着された個々のチップを剥離する方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a semiconductor device, and more particularly to a method of peeling individual chips adhered on an ultraviolet curable tape (hereinafter referred to as UV tape).
【０００２】近年, 半導体装置の高集積化, 多機能化に
ともない, チップは大型化されている。そのため，チッ
プの接着面積が大きくなってUVテープからの剥離が困難
になり，対策が要求される。In recent years, as semiconductor devices have become highly integrated and multifunctional, chips have become larger. Therefore, the adhesive area of the chip becomes large and it becomes difficult to peel it off from the UV tape, and countermeasures are required.
【０００３】[0003]
【従来の技術】UVテープからのチップ剥離の従来例を図
２を用いて説明する。図２(A),(B) は従来例の説明図で
ある。2. Description of the Related Art A conventional example of chip separation from a UV tape will be described with reference to FIG. 2A and 2B are explanatory views of a conventional example.
【０００４】図２(A) はUVテープの裏面より紫外線を照
射している状態, 図２(B) はチップ剥離時の状態で剥離
されたチップにクラックが発生した状態を示す。図にお
いて， 1はUVテープ, 1AはUVテープのベースとなるポリ
エチレンテープ, 1Bは紫外線硬化型接着剤, 2はUVテー
プを張り付けた枠, 3はUVテープ上に接着されたウェー
ハ (個々のチップ3Cにフルカットされている), 4はチッ
プをピックアップするコレット, 5はチップを突き上げ
るピン, 6はピンマウント, 7はピンマウントのホル
ダ, 8はUVランプ, 9はランプハウスである。FIG. 2 (A) shows a state in which ultraviolet rays are radiated from the back surface of the UV tape, and FIG. 2 (B) shows a state in which cracks have occurred in the peeled chips at the time of chip peeling. In the figure, 1 is a UV tape, 1A is a polyethylene tape which is the base of the UV tape, 1B is a UV curable adhesive, 2 is a frame to which the UV tape is attached, and 3 is a wafer bonded to the UV tape (individual chips). (Full cut to 3C), 4 is a collet that picks up the chip, 5 is a pin that pushes up the chip, 6 is a pin mount, 7 is a pin mount holder, 8 is a UV lamp, and 9 is a lamp house.
【０００５】従来は，剥離強度が 7〜8 g/25mm幅のUVテ
ープが使用されている。このテープを使用して20mm□程
度の大チップを剥離する場合は, UVテープとの接着面積
が大きくなり, チップをピックアップするときに, 突き
上げピンが折れたり, チップを傷つける可能性が大き
い。このときの接着力 (ホルダを押し上げる力) は2200
gの値を示す。Conventionally, a UV tape having a peel strength of 7 to 8 g / 25 mm width has been used. When a large chip of about 20 mm □ is peeled off using this tape, the adhesive area with the UV tape becomes large, and when picking up the chip, the push-up pin may be broken or the chip may be damaged. The adhesive force (power to push up the holder) at this time is 2200
Indicates the value of g.
【０００６】そのために, 最近では大チップ用として剥
離強度が5 g/25mm幅以下のUVテープが使用されるように
なったが, このテープを用いても, 従来の単に紫外線の
みをUVテープに照射する方法では, UVテープの接着剤の
硬化が不十分であり, そのため接着力が残存して, 剥離
に大きな力を必要とした。For this reason, recently, a UV tape having a peeling strength of 5 g / 25 mm width or less has been used for a large chip. Even if this tape is used, only a conventional UV tape can be converted into a UV tape. In the irradiation method, the adhesive of the UV tape was not sufficiently cured, so the adhesive strength remained and a large force was required for peeling.
【０００７】[0007]
【発明が解決しようとする課題】本発明は, 大チップを
UVテープから剥離する際に，UVテープの接着力を低減し
て，チップにクラックの発生及び突き上げピンの破損を
防止することを目的とする。SUMMARY OF THE INVENTION The present invention requires a large chip.
The purpose is to reduce the adhesive strength of the UV tape when peeling it from the UV tape, and to prevent cracks in the chip and damage to the push-up pins.
【０００８】[0008]
【課題を解決するための手段】上記課題の解決は， １）表面に紫外線硬化型接着剤を塗布したテープに半導
体ウェーハを接着し，該ウェーハを個々のチップに分割
し，該テープの裏面より紫外線と熱線を照射し，前記熱
線照射により，前記テープの表面温度を90℃以上に保つ
半導体装置の製造方法，あるいは ２）前記テープがポリオレフィン系樹脂からなり，その
表面温度を90〜140 ℃に保つ前記１記載の半導体装置の
製造方法により達成される。To solve the above-mentioned problems, 1) a semiconductor wafer is adhered to a tape whose surface is coated with a UV-curable adhesive, the wafer is divided into individual chips, and the back surface of the tape is used. A method of manufacturing a semiconductor device which irradiates ultraviolet rays and heat rays and keeps the surface temperature of the tape at 90 ° C. or higher by the heat ray irradiation, or 2) the tape is made of a polyolefin resin, and the surface temperature is 90 to 140 ° C. This is achieved by the method for manufacturing a semiconductor device described in 1 above.
【０００９】本発明では, 個々のチップに分割されたウ
ェーハを接着したUVテープの裏面より紫外線と熱線とを
照射することにより，紫外線による接着剤の架橋 (硬
化) 反応が熱線により促進されて接着剤は収縮する。こ
のためチップとUVテープとの接着力は低減する。In the present invention, by irradiating ultraviolet rays and heat rays from the back surface of the UV tape to which the wafer divided into individual chips is adhered, the crosslinking (curing) reaction of the adhesive agent by the ultraviolet rays is promoted by the heat rays to bond the wafer. The agent shrinks. Therefore, the adhesive force between the chip and the UV tape is reduced.
【００１０】[0010]
【発明の実施の形態】図１(A),(B) は本発明の実施の形
態の説明図である。図１(A) はUVテープの裏面より紫外
線と熱線（赤外線）を照射している状態,図２(B) はチ
ップ剥離間前状態を示す。1 (A) and 1 (B) are explanatory views of an embodiment of the present invention. Fig. 1 (A) shows the state where ultraviolet rays and heat rays (infrared rays) are irradiated from the back surface of the UV tape, and Fig. 2 (B) shows the state before chip peeling.
【００１１】図において， 1はUVテープ, 1AはUVテープ
のベースとなるポリエチレンテープ, 1Bは紫外線硬化型
接着剤, 2はUVテープを張り付けた枠, 3はUVテープ上
に接着されたウェーハ (個々のチップにフルカットされ
ている), 4はチップをピックアップするコレット, 5は
チップを突き上げるピン, 6はピンマウント, 7はピン
マウントのホルダ, 8はUVランプ, 9は集光型ランプハ
ウスでアルミニウム等からなる反射板), 10 は熱線のソ
ースで赤外線ランプ (例えば, ハロゲンランプ) であ
る。In the figure, 1 is a UV tape, 1A is a polyethylene tape which is a base of the UV tape, 1B is an ultraviolet curable adhesive, 2 is a frame to which the UV tape is attached, and 3 is a wafer adhered on the UV tape ( (Fully cut into individual chips), 4 is a collet that picks up chips, 5 is a pin that pushes the chip up, 6 is a pin mount, 7 is a pin mount holder, 8 is a UV lamp, 9 is a concentrating lamp house And a reflector made of aluminum or the like), 10 is a source of heat rays and is an infrared lamp (for example, a halogen lamp).
【００１２】図示のように, UVランプとハロゲンランプ
を同時にUVテープの裏面に照射し，UVテープの表面温度
が90〜140 ℃の間の温度になるようにハロゲンランプか
ら出る熱線の強度を調節する。As shown in the figure, the UV lamp and the halogen lamp are irradiated on the back surface of the UV tape at the same time, and the intensity of the heat ray emitted from the halogen lamp is adjusted so that the surface temperature of the UV tape is between 90 and 140 ° C. To do.
【００１３】これにより, 紫外線硬化型接着剤の架橋反
応が促進され，接着剤の堆積が収縮する。この結果, 接
着剤の接着力は低下し，20mm□のチップで接着力は従来
例では2200 gであったが, 1600 gまで低下した。As a result, the cross-linking reaction of the UV-curable adhesive is promoted and the deposition of the adhesive shrinks. As a result, the adhesive strength of the adhesive decreased, and the adhesive strength of the 20 mm □ chip was 2200 g in the conventional example, but decreased to 1600 g.
【００１４】この実施の形態では, 集光型ランプハウス
を用いたが, 拡散型のランプハウスを用いても本発明の
効果は変わらないことは勿論である。UVテープの表面温
度が90℃以下, あるいは 140℃以上になった場合は剥離
装置を収納するチャンバ内の窒素の流量を制御するか,
あるいはハロゲンランプの出力を調整するように帰還を
かけることにより，チップ剥離の安定性を維持すること
ができる。In this embodiment, the condensing type lamp house is used, but it goes without saying that the effect of the present invention does not change even if a diffusing type lamp house is used. If the surface temperature of the UV tape is below 90 ℃ or above 140 ℃, please control the flow rate of nitrogen in the chamber that houses the peeling device.
Alternatively, by feeding back so as to adjust the output of the halogen lamp, the stability of chip peeling can be maintained.
【００１５】次に, UVテープの表面温度が90〜140 ℃と
する数値限定の根拠を説明する。UVテープを 140℃以上
に保持すると, 接着材は溶けないが, UVテープの基材で
あるポリオレフィン系樹脂等からなる溶ける危険があ
る。Next, the grounds for limiting the numerical values for the surface temperature of the UV tape to be 90 to 140 ° C. will be described. If the UV tape is kept at 140 ° C or higher, the adhesive will not melt, but there is a risk of melting due to the polyolefin resin that is the base material of the UV tape.
【００１６】また，UVテープを90℃以下に保持すると,
接着材の堆積の収縮が起こらないため，チップと接着剤
との接触面積はかわらない。従って, 接着力が落ちない
ためチップは剥離しない。前記のように20mm□のチップ
での実験結果によると接着力は70℃では2200 gである
が，90℃で1600 gまで低下し，それ以上に温度を上げて
も接着力は殆どこの値を保って変わらない。When the UV tape is kept at 90 ° C. or below,
The contact area between the chip and the adhesive does not change because the contraction of the adhesive deposit does not occur. Therefore, the adhesive force does not drop and the chip does not peel off. As mentioned above, according to the experimental results with the chip of 20 mm □, the adhesive force was 2200 g at 70 ° C, but it decreased to 1600 g at 90 ° C, and the adhesive force was almost this value even if the temperature was raised further. Keep it unchanged.
【００１７】[0017]
【発明の効果】本発明によれば, 大チップでもUVテープ
の接着剤の収縮量を調節することにより, チップ剥離時
の接着強度が低減でき，チップのピックアップ時の不良
(チップにクラックの発生, チップ突き上げピンの破
損) を低減し，また，チップ突き上げピンの磨耗も少な
くなる。According to the present invention, by adjusting the shrinkage amount of the adhesive of the UV tape even with a large chip, the adhesive strength at the time of chip peeling can be reduced and the chip pick-up failure can be reduced.
(Cracks on the chip, damage to the chip push-up pin) are reduced, and wear of the chip push-up pin is also reduced.
【図面の簡単な説明】[Brief description of the drawings]
【図１】 本発明の実施の形態の説明図FIG. 1 is an explanatory diagram of an embodiment of the present invention.
【図２】 従来例の説明図FIG. 2 is an explanatory diagram of a conventional example.
1 紫外線硬化型(UV)テープ 1A UVテープのベースとなるポリエチレンテープ 1B 紫外線硬化型接着剤 2 UVテープを張り付けた枠 3 UVテープ上に接着されたウェーハ 4 チップをピックアップするコレット 5 チップを突き上げるピン 6 ピンマウント 7 ピンマウントのホルダ 8 紫外線(UV)ランプ 9 集光型ランプハウス 10 熱線のソースでハロゲンランプ 1 UV-curable (UV) tape 1A Polyethylene tape that is the base of UV tape 1B UV-curable adhesive 2 Frame to which UV tape is attached 3 Wafer bonded on UV tape 4 Collet for picking up chip 5 Pin that pushes up chip 6-pin mount 7-pin mount holder 8 Ultraviolet (UV) lamp 9 Concentrated lamp house 10 Halogen lamp with heat source
Claims (2)
ープに半導体ウェーハを接着し，該ウェーハを個々のチ
ップに分割し，該テープの裏面より紫外線と熱線を照射
し，前記熱線照射により，前記テープの表面温度を90℃
以上に保つことを特徴とする半導体装置の製造方法。1. A semiconductor wafer is adhered to a tape having a surface coated with an ultraviolet curable adhesive, the wafer is divided into individual chips, and ultraviolet rays and heat rays are irradiated from the back surface of the tape. The surface temperature of the tape is 90 ℃
A method for manufacturing a semiconductor device, characterized by keeping the above.
なり，その表面温度を90〜140 ℃に保つことを特徴とす
る請求項１記載の半導体装置の製造方法。2. The method for manufacturing a semiconductor device according to claim 1, wherein the tape is made of a polyolefin resin and the surface temperature thereof is maintained at 90 to 140 ° C.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27301395A JP3731227B2 (en) | 1995-10-20 | 1995-10-20 | Manufacturing method of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27301395A JP3731227B2 (en) | 1995-10-20 | 1995-10-20 | Manufacturing method of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH09115986A true JPH09115986A (en) | 1997-05-02 |
| JP3731227B2 JP3731227B2 (en) | 2006-01-05 |
Family
ID=17521947
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP27301395A Expired - Lifetime JP3731227B2 (en) | 1995-10-20 | 1995-10-20 | Manufacturing method of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3731227B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6395124B1 (en) | 1999-07-30 | 2002-05-28 | 3M Innovative Properties Company | Method of producing a laminated structure |
| JP2009295741A (en) * | 2008-06-04 | 2009-12-17 | Yamaha Motor Co Ltd | Method and apparatus for transferring components |
-
1995
- 1995-10-20 JP JP27301395A patent/JP3731227B2/en not_active Expired - Lifetime
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6395124B1 (en) | 1999-07-30 | 2002-05-28 | 3M Innovative Properties Company | Method of producing a laminated structure |
| US6692611B2 (en) | 1999-07-30 | 2004-02-17 | 3M Innovative Properties Company | Method of producing a laminated structure |
| JP2009295741A (en) * | 2008-06-04 | 2009-12-17 | Yamaha Motor Co Ltd | Method and apparatus for transferring components |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3731227B2 (en) | 2006-01-05 |
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