JPH0883840A - Semiconductor device and manufacture thereof - Google Patents

Abstract

PURPOSE: To provide a semiconductor device wherein a contact hole can be formed easily and the thickness of a dielectric film can be made uniform. CONSTITUTION: This device has a semiconductor substrate 1, an interlayer SiO2 film 6 formed on the semiconductor substrate 1, an SiON film 12 formed on the interlayer SiO2 film 6, and a contact hole 13 which is formed through the interlayer SiO2 film 6 and the SiON film 12 to an impurity diffusion layer 3. It also has a first conductor film 14 which is formed at a desired place on the SiON film 12, filling the contact hole 13, and a dielectric film 15 which is constituted of an Si3 N4 , film 15b and an SiO2 film 15a which are deposited on the SiON film 12 and the first conductor film 14 in order.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device in which a contact hole can be easily formed and a film thickness of a dielectric film is uniform, and a method of manufacturing the semiconductor device.

[0002]

2. Description of the Related Art FIG. 9 is a sectional view showing the structure of a conventional semiconductor device. In the figure, 1 is a semiconductor substrate, 2 is an element isolation region formed on the semiconductor substrate 1 and made of, for example, SiO ₂ , 3 is an impurity diffusion layer as a source / drain region formed on the upper surface of the semiconductor substrate 1, and 4 is a semiconductor substrate. A gate electrode 6 made of, for example, polySi formed on the semiconductor substrate 1 via a gate oxide film 5, and a gate electrode 4 on the semiconductor substrate 1.
Interlayer SiO ₂ made of SiO ₂ so as to cover
₂ film, 7 a Si ₃ N ₄ film formed on the interlayer SiO ₂ film 6.

Reference numeral 8 is an interlayer SiO ₂ film 6 and a Si ₃ N ₄ film 7.
A contact hole 9 which is formed to penetrate to the impurity diffusion layer 3 and is buried in the contact hole 8 and is formed on the Si ₃ N ₄ film 7, for example, pol.
A first conductor film 10 serving as a lower electrode of a capacitor made of ySi is a capacitor dielectric film formed on the first conductor film 9, and is made of SiO ₂ 10a and Si ₃ N ₄ film 1.
It consists of 0b. Reference numeral 11 denotes a second conductor film formed on the dielectric film 10 as an upper electrode of a capacitor made of, for example, polySi.

Next, a manufacturing process of the conventional semiconductor device having the above structure will be described with reference to FIGS. First, in a predetermined region on the semiconductor substrate 1, for example, L
The element isolation region 2 is formed by using the OCOS method (FIG. 10).
(A)). Next, a gate oxide film 5 is formed in a predetermined region on the semiconductor substrate 1 surrounded by the element isolation regions 2 by, for example, a thermal oxidation method, and a gate electrode 4 is formed therethrough by, for example, a low pressure CVD method (FIG. 10). (B)). Next, arsenic, which is an impurity, is implanted into the semiconductor substrate 1 by the ion implantation method, and the impurities are activated by the thermal diffusion method to form the impurity diffusion layer 3 (FIG. 10C).

Next, an interlayer SiO ₂ film 6 is formed so as to cover the entire surface by, for example, a low pressure CVD method (FIG. 10).
(D)). Next, using, for example, SiH ₂ Cl ₂ and NH ₃ ,
The Si ₃ N ₄ film 7 is formed by the low pressure CVD method at about 700 to 800 ° C. (FIG. 11A). Next, a resist is applied, photolithography is performed and patterning is performed, and the Si ₃ N ₄ film 7 and the interlayer SiO ₂ film 6 are etched using this resist as a mask to form a contact hole 8 (FIG. 1).
1 (b)).

Next, a polySi film 9a is laminated on the Si ₃ N ₄ film 7 so as to fill the contact hole 8 (FIG. 11C). Next, the polySi film 9a is patterned to form the first conductor film 9 (FIG. 12).
(A)). Next, the first conductor film 9 and the Si ₃ N ₄ film 7
A Si ₃ N ₄ film 10b having a thickness of 30 to 100 angstrom is laminated on the upper surface by, for example, a low pressure CVD method (FIG. 12B).
Next, the Si ₃ N ₄ film 10b is oxidized, for example, in a water vapor atmosphere at 800 to 900 ° C. to form a thin SiO ₂ 10a film on the upper surface.
To form the dielectric film 10 (FIG. 12B).
Next, a polySi film is laminated by, for example, a low pressure CVD method and patterned to form a second conductor film 11 (FIG. 9).

As described above, Si _{3 is formed} on the interlayer SiO ₂ film 6.
The N ₄ film 7 is formed by stacking the Si ₃ N ₄ film 10b on the Si ₃ N ₄ film 7 and the first conductor film 9 so that the deposition characteristics are the same. since it is, the Si ₃ N ₄ film of the Si ₃ N ₄ film 10b laminated on the 7 thickness and the 1 Si ₃ is laminated on the conductive film 9 of N ₄ film 10b
This is because the film thickness is uniform. That is, Si ₃ N ₄
When the film 7 is not present, the Si ₃ N ₄ film 10b is laminated on the interlayer SiO ₂ film 6 and the first conductor film 9, and the deposition characteristics of the two differ, so that the interlayer SiO ₂ film is formed. _{Since the} film thickness of the Si ₃ N ₄ film 10b on the _second film 6 is thinner than that of the Si ₃ N ₄ film 10b on the first conductor film 9, the first conductor film 9 and the interlayer SiO _{2 The} Si ₃ N ₄ film 10b is thinly formed at the position that becomes the boundary with the upper surface of the film 6, and oxygen is introduced from this position when the Si ₃ N ₄ film 10b is oxidized. There is a possibility that the film 9 may be oxidized and the dielectric film 10 may become thicker than the design specification, impairing the function of the device.

[0008]

The conventional semiconductor device is constructed as described above, and although the dielectric film 10 is formed to have a uniform film thickness, Si ₃ N ₄ is used in the etching process for forming the contact hole 8. Since the etching characteristics of the film 7 and the interlayer SiO ₂ film 6 are different, if the etching process is performed by one type of etching process, the opening shape of the Si ₃ N ₄ film 7 which is difficult to be etched becomes a new mask and becomes a contact hole. Since the shape of the contact hole 8 is determined, the variation in the etching of the Si ₃ N ₄ film directly affects the dimensional accuracy of the contact hole 8. Therefore, it is necessary to etch both films by changing the etchant, which causes a problem that the manufacturing process becomes complicated in two steps.

The present invention has been made to solve the above problems, and a semiconductor device and a semiconductor which can form a dielectric film with a uniform thickness and easily form a contact hole. The present invention relates to a method for manufacturing a device.

[0010]

According to a first aspect of the present invention, there is provided a semiconductor device, a semiconductor substrate, an interlayer SiO ₂ film formed on the semiconductor substrate, and a first SiO ₂ film formed on the interlayer SiO ₂ film. An insulating film, a contact hole formed through the interlayer SiO ₂ film and the first insulating film to reach the semiconductor substrate, and a contact hole which is embedded in the contact hole and formed at a desired position on the first insulating film. A conductive film and a dielectric film formed by sequentially stacking a nitride film and an oxide film on the first insulating film and the conductive film, and the deposition characteristics of the nitride film on the first insulating film and the conductive film. In which the material of the first insulating film is set so as to have the same deposition property of the nitride film on the first insulating film, the first insulating film has the same etching target property as that of the interlayer SiO ₂ film. It consists of things.

A semiconductor device according to a second aspect of the present invention is a semiconductor substrate and an interlayer Si formed on the semiconductor substrate.
An O ₂ film, a contact hole formed through the interlayer SiO ₂ film to reach the semiconductor substrate, a conductor film buried in the contact hole and formed at a desired position on the interlayer SiO ₂ film, A first insulating film formed outside the periphery of the conductor film on the SiO ₂ film, and a dielectric film formed by sequentially laminating a nitride film and an oxide film on the conductor film and the first insulating film. The material of the first insulating film is set so that the deposition characteristics of the nitride film on the first insulating film and the deposition characteristics of the nitride film on the conductor film are equal to each other.

A semiconductor device according to a third aspect of the present invention is a semiconductor device and a SiON film formed on the semiconductor substrate.
Film, a contact hole penetrating the SiON film to reach the semiconductor substrate, a conductor film embedded in the contact hole and formed at a desired position on the SiON film, a conductor film and a SiON film And a dielectric film formed by sequentially stacking a nitride film and an oxide film.

A semiconductor device according to a fourth aspect of the present invention is a semiconductor substrate and an interlayer Si formed on the semiconductor substrate.
An O ₂ film, a contact hole formed through the interlayer SiO ₂ film to reach the semiconductor substrate, a conductor film buried in the contact hole and formed at a desired position on the interlayer SiO ₂ film, A dielectric body in which a plurality of island-shaped Si nuclei are formed on a SiO ₂ film and a conductor film, and a nitride film and an oxide film are sequentially stacked on the conductor film and an interlayer SiO ₂ film through each Si nucleus. And a membrane.

According to a fifth aspect of the present invention, in a method for manufacturing a semiconductor device, an interlayer SiO ₂ film is formed on a semiconductor substrate, a first resist is formed on the interlayer SiO ₂ film, and patterning is performed by photolithography. Then, the interlayer SiO ₂ film is etched using the first resist pattern as a mask to form a contact hole reaching the semiconductor substrate. Then, a conductor film that fills the contact hole is formed on the interlayer SiO ₂ film, a second resist is formed on the conductor film, and patterning is performed by photolithography, and the second resist pattern is used as a mask to form the conductor film. leaving the desired portion performs etching only the second resist pattern first insulating film is formed on the implanted interlayer SiO ₂ film top surface charged substance into the interlayer SiO ₂ film as a mask, the first insulating film and the conductive A dielectric film is formed by depositing a nitride film on a body film and oxidizing the body film to sequentially stack a nitride film and an oxide film.

In the method of manufacturing a semiconductor device according to claim 6 of the present invention, the interlayer SiO ₂ film is formed on the semiconductor substrate, the first resist is formed on the interlayer SiO ₂ film, and patterning is performed by photolithography. Then, the interlayer SiO ₂ film is etched using the first resist pattern as a mask to form a contact hole reaching the semiconductor substrate. Then, a conductor film that fills the contact hole is formed on the interlayer SiO ₂ film, a second resist is formed on the conductor film, and patterning is performed by photolithography, and the second resist pattern is used as a mask to form the conductor film. leaving the desired portion performs the etching only, by low pressure CVD in the interlayer SiO ₂ film and the conductive film on to form an island-shaped plurality of Si nuclei, through each Si nuclei interlayer SiO ₂ film and a conductor film on Then, a nitride film is deposited and oxidized to form a dielectric film in which the nitride film and the oxide film are sequentially laminated.

[0016]

In the semiconductor device according to the first aspect of the present invention, the first insulating film has etching characteristics equivalent to the etching characteristics of the interlayer SiO ₂ film. The film and the interlayer SiO ₂ film can be easily etched, and the film thickness of the dielectric film can be made uniform.

[0017] The semiconductor device according to claim 2 in the present invention, since a first insulating film on the periphery outside of the conductive film on the interlayer SiO ₂ film, a contact hole only by etching the interlayer SiO ₂ film Can be formed, and the film thickness of the dielectric film can be made uniform.

According to a third aspect of the present invention, in a semiconductor device, a SiON film is formed on a semiconductor substrate.
Since a contact hole penetrating the film is formed, Si
The contact hole can be formed only by etching the ON film.
Moreover, the film thickness of the dielectric film can be made uniform.

In the semiconductor device according to the fourth aspect of the present invention, since the island-shaped Si nuclei are formed on the interlayer SiO ₂ film and the conductor film, the contact hole can be formed only by etching the interlayer SiO ₂ film. Moreover, the film thickness of the dielectric film can be made uniform.

According to a fifth aspect of the present invention, in the method of manufacturing a semiconductor device, an interlayer SiO ₂ film is formed on a semiconductor substrate, a first resist is formed on the interlayer SiO ₂ film, and patterning is performed by photolithography. The interlayer SiO ₂ film is etched using the first resist pattern as a mask to form a contact hole reaching the semiconductor substrate. Then, a conductor film that fills the contact hole is formed on the interlayer SiO ₂ film, a second resist is formed on the conductor film, and patterning is performed by photolithography, and the second resist pattern is used as a mask to form the conductor film. leaving the desired portion performs etching only the second resist pattern first insulating film is formed on the implanted interlayer SiO ₂ film top surface charged substance into the interlayer SiO ₂ film as a mask, the first insulating film and the conductive Since a nitride film is deposited on the body film and oxidized to form a dielectric film in which the nitride film and the oxide film are sequentially stacked, the first insulating film is formed as a conductive film on the interlayer SiO ₂ film. It is formed outside the periphery, and the film thickness of the dielectric film is formed uniformly.

According to a sixth aspect of the present invention, in the method of manufacturing a semiconductor device, an interlayer SiO ₂ film is formed on a semiconductor substrate, a first resist is formed on the interlayer SiO ₂ film, and patterning is performed by photolithography. The interlayer SiO ₂ film is etched using the first resist pattern as a mask to form a contact hole reaching the semiconductor substrate. Then, a conductor film that fills the contact hole is formed on the interlayer SiO ₂ film, a second resist is formed on the conductor film, and patterning is performed by photolithography, and the second resist pattern is used as a mask to form the conductor film. leaving the desired portion performs the etching only, by low pressure CVD in the interlayer SiO ₂ film and the conductive film on to form an island-shaped plurality of Si nuclei, through each Si nuclei interlayer SiO ₂ film and a conductor film on Then, a nitride film is deposited and oxidized to form a dielectric film formed by sequentially stacking the nitride film and the oxide film.
₂ multiple Si nuclei are formed in islands on the film and the conductor film,
Further, the film thickness of the dielectric film is formed uniformly.

[0022]

【Example】

Example 1. Embodiments of the present invention will be described below with reference to the drawings. 1 is a sectional view showing the structure of a semiconductor device according to a first embodiment of the present invention. In the figure, the same parts as those in the conventional case are designated by the same reference numerals, and the description thereof will be omitted. Numeral 12 is formed on the inter-layer SiO ₂ film 6 and is SiO as a first insulating film.
N film, 13 is a contact hole formed through the interlayer SiO ₂ film 6 and SiON film 12 to reach the impurity diffusion layer 3, and 14 is buried in the contact hole 13 and formed on the SiON film 12. For example p
A first conductor film made of oliSi as a capacitor lower electrode, 15 is a capacitor dielectric film formed on the first conductor film 14, and includes SiO ₂ 15a and Si ₃ N ₄
It consists of a membrane 15b. Reference numeral 16 is a second conductor film formed on the dielectric film 15 as a lower electrode of a capacitor made of, for example, polySi. Here, the SiON film 12 is being used, Si ₃ N ₄ deposition characteristics of the Si ₃ N ₄ film 15b to SiON film 12 and the first conductor film 14 above
This is because the deposition characteristics of the film 15b are the same, and the etching characteristics of the SiON film 12 and the interlayer SiO ₂ film 6 are the same.

Next, a manufacturing process of the semiconductor device of the first embodiment configured as described above will be described with reference to FIGS. First, as in the conventional case, the element isolation region 2 is formed in a predetermined region on the semiconductor substrate 1 by using, for example, the LOCOS method (FIG. 2A). Next, a gate oxide film 5 is formed in a predetermined region on the semiconductor substrate 1 surrounded by the element isolation regions 2 by, for example, a thermal oxidation method, and a gate electrode 4 is formed therethrough by, for example, a low pressure CVD method (FIG. 2).
(B)). Next, arsenic, which is an impurity, is implanted into the semiconductor substrate 1 by an ion implantation method to activate the impurities by a thermal diffusion method to form an impurity diffusion layer 3 (FIG. 2C).

Next, an interlayer SiO ₂ film 6 is formed so as to cover the entire surface by, for example, a low pressure CVD method (FIG. 2D).
Next, nitrogen ions 17 are ion-implanted on the interlayer SiO ₂ film 6, for example, with an implantation energy of 15 keV and a dose of 1
Implantation was performed under the condition of E17 atom / cm ² and the interlayer S
Oxynitride conversion of the surface of the iO ₂ film is performed 300 to 5
A SiON film 12 having a thickness of 00 angstrom is formed (FIG. 3A). At this time, since the nitrogen ions 17 diffuse outward in the interlayer SiO ₂ film 6 during the heat treatment, the interlayer SiO ₂ film 6
The SiON film 12 can be formed thereon.

Next, a resist is applied and patterned by photolithography, and the resist is used as a mask for SiO 2.
The N film and the interlayer SiO ₂ film 6 are etched to form a contact hole 13 (FIG. 3B).

Next, a polySi film 14a is laminated on the SiON film 12 so as to fill the contact hole 13 (FIG. 3C). Next, the polySi film 14a is patterned to form the first conductor film 14 (FIG. 4).
(A)). Next, a Si ₃ N ₄ film 15b having a thickness of 30 to 100 Å is laminated on the first conductor film 14 and the SiON film 12 by, for example, the low pressure CVD method (FIG. 4).
(B)). Next, the Si ₃ N ₄ film 15b is applied to, for example, 800 to 9
Oxidation is performed in a steam atmosphere at 00 ° C to form a thin Si film on the upper surface.
O ₂ 15a is formed to form the dielectric film 15 (see FIG. 4).
(C)). Next, polyS is formed by, for example, a low pressure CVD method.
The second conductor film 16 is formed by stacking i films and patterning them.
Is formed (FIG. 1).

The deposition characteristics of the Si ₃ N ₄ film 15b of the semiconductor device configured of the first embodiment as described above and deposition characteristics of the Si ₃ N ₄ film 15b to SiON film 12 to the first conductor film 14 Are equal to each other, the Si ₃ N ₄ film 15b has a uniform film thickness on the SiON film 12 and the first conductor film 14, and the first conductor film is oxidized when the Si ₃ N ₄ film 15b is oxidized. 1
Oxidation of No. 4 is prevented, the film thickness of the dielectric film 15 can be formed uniformly, and since the SiON film 12 and the inter-layer SiO ₂ film 6 have the same etching target characteristics, etching is performed without changing the etchant. Therefore, the etching for forming the contact hole 13 can be performed in one step.

Embodiment 2 FIG. In the above-mentioned Example 1, interlayer SiO ₂
Although the example of implanting the nitride ions 17 into the film 6 to form the SiON film 12 is shown, the invention is not limited to this, and for example, an inert element (argon or the like), a halogen element (fluorine, chlorine or the like), silicon, or the like may be used. It is ion-implanted into the interlayer SiO ₂ film interlayer SiO ₂ by damage during the ion implantation
Even if the bonds between the atoms near the surface of the film are cut to increase the dangling bonds and form the first insulating film with the activated surface, the Si ₃ N The deposition characteristics of the ₄ film and the deposition characteristics of the Si ₃ N ₄ film on the first conductor film are different from the interlayer S.
Since it is improved as compared with the iO ₂ film, the film thickness of the dielectric film can be made uniform as in the first embodiment, and the interlayer SiO ₂ film can be formed.
_{Since the} etching characteristics of the _two films and those of the first insulating film are the same, the etching process at the time of forming the contact hole can be easily performed.

Example 3. In each of the above embodiments, interlayer SiO ₂
Although the example of implanting ions into the film to form the first insulating film has been shown, the present invention is not limited to this. For example, electrons are injected into the interlayer SiO ₂ film to form the charged first insulating film. be deposited property of the Si ₃ N ₄ film to the first insulating film and for depositing the characteristics of the Si ₃ N ₄ film to the first conductive film is improved as compared with the interlayer SiO ₂ film The film thickness of the dielectric film can be made uniform as in the above-mentioned respective embodiments, and the interlayer Si
Since the O ₂ film and the first film have the same etching target characteristics, the etching process for forming the contact hole can be easily performed.

Example 4. In the above-mentioned Example 1, interlayer SiO ₂
Although the example in which the nitride ions 17 are implanted into the film 6 to form the SiON film 12 has been shown, the invention is not limited to this. For example, even if the SiON film is deposited on the interlayer SiO ₂ film by the low pressure CVD method, It is possible to obtain the same effect as that of the first embodiment.

Example 5. 5 is a sectional view showing the structure of a semiconductor device according to a fifth embodiment of the present invention. In the figure, the same parts as those in the first embodiment are designated by the same reference numerals and the description thereof will be omitted. Reference numeral 18 is a contact hole formed through the interlayer SiO ₂ film 6 to reach the impurity diffusion layer 3, 19
Is embedded in this contact hole 18,
A first conductor film formed on the inter-layer SiO ₂ film 6 as a capacitor lower electrode made of, for example, polySi, 2
Reference numeral 0 denotes a SiON film formed outside the first conductor film 19 of the interlayer SiO ₂ film 6.

Next, a fifth embodiment constructed as described above.
A method of manufacturing the semiconductor device of 3 will be described with reference to FIGS. First, the interlayer SiO ₂ film 6 is formed through the same steps as those in Example 1, a resist is applied, photolithography is performed, and patterning is performed. Then, using this resist as a mask, etching is performed to form a contact hole (FIG. 6A).

Next, a polySi film 19a is laminated on the interlayer SiO ₂ film 6 so as to fill the contact hole 18 (FIG. 6B). Next, a resist is applied on the polySi film 19a, photolithography is performed and patterning is performed to form a resist film 21, and etching is performed using this as a mask to form the first conductor film 19. Then, using the resist film 21 as a mask, nitrogen ions 17 are formed on the interlayer SiO ₂ film 6 by an ion implantation method, for example, with an implantation energy of 1
Implantation is performed under the conditions of 5 keV and a dose amount of 1E17 atom / cm ² , and oxynitridation is performed to 300 to 5
A SiON film 20 having a thickness of 00 Å is formed (FIG. 6C).

Next, through the steps similar to those in the above-mentioned Example 1,
The dielectric film 15 made of the Si ₃ N ₄ film 15a and the SiO ₂ 15b and the second conductive film 16 are formed to manufacture a semiconductor device as shown in FIG.

In the semiconductor device of the fifth embodiment having the above-described structure, the dielectric film 15 is formed to have a uniform film thickness as in the first embodiment, and the contact hole 18 is formed. Since the etching can be performed only on the interlayer SiO ₂ film 6, the contact hole 18 can be formed more easily.

Example 6. In the above-mentioned Example 5, interlayer SiO ₂
Although the example in which the nitrogen ions 17 are implanted into the film 6 to form the SiON film 20 is shown, the invention is not limited to this. For example, an inert element (argon or the like), a halogen element (fluorine, chlorine or the like) silicon, or charged particles. Even if the electrons (electrons and the like) are injected into the interlayer SiO ₂ film to form the first insulating film, the dielectric film can be formed to have a uniform film thickness. Needless to say, the etching process can be easily performed.

Example 7. 7 is a sectional view showing the structure of a semiconductor device according to a seventh embodiment of the present invention. In the figure, the same parts as those in the first embodiment are designated by the same reference numerals and the description thereof will be omitted. 22 is a SiON formed on the semiconductor substrate 1 so as to cover the gate electrode 4 by, for example, a low pressure CVD method.
A film, 23 is a contact hole formed by penetrating the SiON film 22 and etching the impurity diffusion layer 3.

In the semiconductor device of the seventh embodiment configured as described above, the dielectric film 15 is formed to have a uniform film thickness as in the first embodiment, and the contact hole 23 is formed. Since the etching can be performed only on the SiON film 22, the contact hole 23 can be formed more easily.

Example 8. 8 is a sectional view showing the structure of a semiconductor device according to an eighth embodiment of the present invention. In the figure, the same parts as those in the fifth embodiment are designated by the same reference numerals and the description thereof will be omitted. Reference numeral 24 is a plurality of island-shaped Si nuclei formed on the inter-layer SiO ₂ film 6 and the first conductor film 14. For example, a low pressure CVD furnace is used to supply SiH ₄ gas to about 1E-5T.
It is introduced at a partial pressure of about orr, and the temperature and pressure are adjusted so that the deposition rate of Si is sufficiently slowed.

In the semiconductor device of Example 8 configured as described above, since the plurality of island-shaped Si nuclei 24 are formed on the interlayer SiO ₂ film 6 and the first conductor film 14, Si
_{Since the 3} N ₄ film 15b grows by using these Si nuclei 24 as seeds, the film thickness becomes uniform, and thus the dielectric film 15 can be formed uniformly, and the contact hole 18 is formed by the interlayer SiO ₂ film. Since the etching can be performed only on the film 6, the same effect as that of the fifth embodiment can be obtained.

[0041]

As described above, according to the first aspect of the present invention, the semiconductor substrate and the interlayer S formed on the semiconductor substrate are formed.
and iO ₂ film, a first insulating film formed on the interlayer SiO ₂ film, a contact hole which is formed up to the semiconductor substrate through the interlayer SiO ₂ film and the first insulating film, a contact hole A conductor film which is embedded and formed at a desired position on the first insulating film; and a dielectric film formed by sequentially laminating a nitride film and an oxide film on the first insulating film and the conductor film. A material of the first insulating film is set so that the deposition characteristics of the nitride film on the first insulating film and the deposition characteristics of the nitride film on the conductor film are equal to each other.
Since the insulating film has the same etching property as that of the interlayer SiO ₂ film, it is easy to form the contact hole and the dielectric film can have a uniform thickness. It is possible to provide.

According to a second aspect of the present invention, a semiconductor substrate, an interlayer SiO ₂ film formed on the semiconductor substrate,
A contact hole formed through the interlayer SiO ₂ film to reach the semiconductor substrate, a conductor film embedded in the contact hole and formed at a desired position on the interlayer SiO ₂ film, and a contact hole on the interlayer SiO ₂ film. A first insulating film formed outside the periphery of the conductive film; and a dielectric film formed by sequentially stacking a nitride film and an oxide film on the conductive film and the first insulating film. Since the material of the first insulating film is set so that the deposition characteristics of the nitride film on the insulating film and the deposition characteristics of the nitride film on the conductor film are the same, it is easy to form the contact hole. It is possible to provide a semiconductor device in which the thickness of the dielectric film can be formed uniformly.

According to a third aspect of the present invention, the semiconductor substrate, the SiON film formed on the semiconductor substrate, and the Si
A contact hole formed through the ON film to reach the semiconductor substrate, a conductor film which is buried in the contact hole and is formed at a desired position on the SiON film, and a nitride film on the conductor film and the SiON film. Since the contact hole and the dielectric film formed by sequentially stacking the oxide film are provided, it is possible to easily form the contact hole, and it is possible to provide a semiconductor device in which the film thickness of the dielectric film can be formed uniformly.

According to a fourth aspect of the present invention, a semiconductor substrate, an interlayer SiO ₂ film formed on the semiconductor substrate,
A contact hole formed up to the semiconductor substrate through the interlayer SiO ₂ film, and the conductive film formed on a desired position on the interlayer SiO ₂ film with embedded in the contact hole, the interlayer SiO ₂ film and the conductive A plurality of island-shaped Si nuclei formed on the body film, and the conductor film and interlayer Si
Since the dielectric film is formed by sequentially laminating the nitride film and the oxide film on the O ₂ film through each Si nucleus, the contact hole can be easily formed, and the film thickness of the dielectric film can be made uniform. It is possible to provide a semiconductor device that can be formed.

According to a fifth aspect of the present invention, an interlayer SiO ₂ film is formed on a semiconductor substrate, a first resist is formed on the interlayer SiO ₂ film, and patterning is performed by photoengraving. Interlayer SiO 2 using the resist pattern as a mask
_{The two} films are etched to form a contact hole reaching the semiconductor substrate. Then, a conductor film that fills the contact hole is formed on the interlayer SiO ₂ film, a second resist is formed on the conductor film, and patterning is performed by photolithography, and the second resist pattern is used as a mask to form the conductor film. leaving the desired portion performs etching only the second resist pattern first insulating film is formed on the implanted interlayer SiO ₂ film top surface charged substance into the interlayer SiO ₂ film as a mask, the first insulating film and the conductive Since a nitride film is deposited on the body film and oxidized to form a dielectric film in which a nitride film and an oxide film are sequentially stacked, it is easy to form contact holes and the film thickness of the dielectric film is uniform. It is possible to provide a method for manufacturing a semiconductor device that can be formed in the above.

According to a sixth aspect of the present invention, an interlayer SiO ₂ film is formed on a semiconductor substrate, a first resist is formed on the interlayer SiO ₂ film, and patterning is performed by photoengraving. Interlayer SiO 2 using the resist pattern as a mask
_{The two} films are etched to form a contact hole reaching the semiconductor substrate. Then, a conductor film that fills the contact hole is formed on the interlayer SiO ₂ film, a second resist is formed on the conductor film, and patterning is performed by photolithography, and the second resist pattern is used as a mask to form the conductor film. Etching is performed to leave only a desired portion, and the interlayer S
A plurality of island-shaped Si nuclei are formed on the iO ₂ film and the conductor film by the low pressure CVD method, and a nitride film is deposited on each of the interlayer SiO ₂ film and the conductor film through the Si nuclei to oxidize the nitride film. Since the dielectric film formed by sequentially laminating the oxide film and the oxide film is formed, it is possible to provide a method for manufacturing a semiconductor device in which a contact hole can be easily formed and the dielectric film can be formed to have a uniform thickness. Is.

[Brief description of drawings]

FIG. 1 is a sectional view showing a configuration of a semiconductor device according to a first embodiment of the present invention.

FIG. 2 is a cross-sectional view showing one step in a manufacturing process of the semiconductor device shown in FIG.

FIG. 3 is a cross-sectional view showing one step in a manufacturing process of the semiconductor device shown in FIG.

FIG. 4 is a cross-sectional view showing one step in a manufacturing process of the semiconductor device shown in FIG.

FIG. 5 is a sectional view showing a configuration of a semiconductor device according to a fifth embodiment of the present invention.

6 is a cross-sectional view showing a step in a manufacturing process of the semiconductor device shown in FIG.

FIG. 7 is a sectional view showing a configuration of a semiconductor device according to a seventh embodiment of the present invention.

FIG. 8 is a sectional view showing a structure of a semiconductor device according to an eighth embodiment of the present invention.

FIG. 9 is a sectional view showing a configuration of a conventional semiconductor device.

10 is a cross-sectional view showing one step in a manufacturing process of the semiconductor device shown in FIG.

11 is a cross-sectional view showing a step in a manufacturing step of the semiconductor device shown in FIG.

12 is a cross-sectional view showing a step in a manufacturing step of the semiconductor device shown in FIG.

[Explanation of symbols]

1 semiconductor substrate, 6 interlayer SiO ₂ film, 12, 20, ₂
2 SiON film, 13, 18, 23 contact hole, 14, 19 first conductor film, 15 dielectric film, 1
5a Si ₃ N ₄ film, 15b SiO ₂ , 16 second conductor film, 17 nitrogen ion, 21 resist film, 24
Si nucleus.

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Claims (6)

[Claims] And 1. A semiconductor substrate, and the semiconductor substrate on the formed interlayer SiO ₂ film, a first insulating film formed on the interlayer SiO ₂ film, the interlayer SiO ₂ film and the first A contact hole formed through the insulating film to reach the semiconductor substrate; a conductor film embedded in the contact hole and formed at a desired position on the first insulating film; A dielectric film formed by sequentially laminating a nitride film and an oxide film on the insulating film and the conductive film, and the deposition characteristics of the nitride film on the first insulating film and the nitriding on the conductive film. In a semiconductor device in which the material of the first insulating film is set so as to have the same deposition characteristics as the film, the first insulating film has the interlayer SiO ₂
A semiconductor device having an etching target characteristic equivalent to that of a film. 2. A semiconductor substrate, an interlayer SiO ₂ film formed on the semiconductor substrate, a contact hole penetrating the interlayer SiO ₂ film to reach the semiconductor substrate, and a contact hole embedded in the contact hole. a first insulating film formed on the peripheral outside of the desired and the conductive film formed at a position, the conductor film on the interlayer SiO ₂ film on the interlayer SiO ₂ film with the above conductor A film and a dielectric film formed by sequentially stacking a nitride film and an oxide film on the first insulating film, and the deposition characteristics of the nitride film on the first insulating film and the dielectric film on the conductive film. A semiconductor device, wherein the material of the first insulating film is set so that the deposition characteristics of the nitride film are equivalent. 3. A semiconductor substrate, a SiON film formed on the semiconductor substrate, a contact hole penetrating the SiON film to reach the semiconductor substrate, and a SiON film embedded in the contact hole and formed by the SiO film.
A semiconductor comprising a conductor film formed at a desired position on the N film and a dielectric film formed by sequentially laminating a nitride film and an oxide film on the conductor film and the SiON film. apparatus. 4. A semiconductor substrate, an interlayer SiO ₂ film formed on the semiconductor substrate, a contact hole penetrating the interlayer SiO ₂ film to reach the semiconductor substrate, and embedded in the contact hole. and the desired conductive film formed at a position on the interlayer SiO ₂ film with the a plurality of Si nuclei formed in an island shape in the interlayer SiO ₂ film and the conductive film, the conductive film and A semiconductor device comprising: a dielectric film formed by sequentially laminating a nitride film and an oxide film on the interlayer SiO ₂ film with the Si nuclei interposed therebetween. 5. A step of forming an interlayer SiO ₂ film on a semiconductor substrate, a step of forming a first resist on the interlayer SiO ₂ film and patterning by photolithography, and a mask of the first resist pattern. As the interlayer SiO ₂
A step of etching a film to form a contact hole reaching the semiconductor substrate; a step of forming a conductor film on the interlayer SiO ₂ film to fill the contact hole; and a second step on the conductor film. Forming a resist and patterning it by photolithography; etching the conductor film using the second resist pattern as a mask to leave only desired portions; and the interlayer using the second resist pattern as a mask. forming a first insulating film on the interlayer SiO ₂ film upper surface by injecting a charged substance into the SiO ₂ film, the nitride performs oxide depositing a nitride film on the first insulating film and the conductive film And a step of forming a dielectric film formed by sequentially stacking a film and an oxide film. 6. A step of forming an interlayer SiO ₂ film on a semiconductor substrate, a step of forming a first resist on the interlayer SiO ₂ film and patterning by photolithography, and a mask of the first resist pattern. As the interlayer SiO ₂
A step of etching a film to form a contact hole reaching the semiconductor substrate; a step of forming a conductor film on the interlayer SiO ₂ film to fill the contact hole; and a second step on the conductor film. Forming a resist and performing patterning by photolithography; a step of etching the conductor film by using the second resist pattern as a mask to leave only a desired portion; and the interlayer SiO ₂
Forming a plurality of island-shaped Si nuclei on the film and the conductor film by a low pressure CVD method; and depositing a nitride film on each of the interlayer SiO ₂ film and the conductor film through the Si nuclei to oxidize the film. And a step of forming a dielectric film formed by sequentially stacking the nitride film and the oxide film, and manufacturing a semiconductor device.